| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| F332K69Y5RN63K7R | VISHAY |
 Category: THT ceramic capacitorsDescription: Capacitor: ceramic; 3.3nF; 1kV; ±10%; THT; 7.5mm Type of capacitor: ceramic Capacitance: 3.3nF Mounting: THT Tolerance: ±10% Terminal pitch: 7.5mm Operating temperature: -30...125°C Operating voltage: 1kV |
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VJ0402Y332KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.3nF; 50V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 3.3nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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P4SMA200A-E3/61 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 400W; 190V; 1.1A; unidirectional; SMA; reel,tape; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 171V Breakdown voltage: 190V Max. forward impulse current: 1.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P4SMA |
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SM6T33A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SM6T |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
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| SQ3461EV-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.6A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
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P6SMB36A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB36A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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SM6T36A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SM6T |
на замовлення 1615 шт: термін постачання 21-30 дні (днів) |
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SM6T36CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SM6T |
на замовлення 3300 шт: термін постачання 21-30 дні (днів) |
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VJ0603A220JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 22pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 21500 шт: термін постачання 21-30 дні (днів) |
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| VJ0201A220JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22pF; 50V; C0G (NP0); ±5%; SMD; 0201 Type of capacitor: ceramic Capacitance: 22pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0201 Case - mm: 0603 Operating temperature: -55...125°C |
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VJ0402Y392KXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.9nF; 50V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 3.9nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
на замовлення 3880 шт: термін постачання 21-30 дні (днів) |
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VJ0805A392JXATW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.9nF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 3.9nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805Y392KXCCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.9nF; 200V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 3.9nF Operating voltage: 200V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ1812A392GXCAT | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 3.9nF; 200V; C0G (NP0); ±2%; SMD; 1812 Type of capacitor: ceramic Capacitance: 3.9nF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
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EGP20D-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 75A; DO15; 50ns Mounting: THT Case: DO15 Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1mA Capacitance: 70pF Type of diode: rectifying Reverse recovery time: 50ns Max. forward impulse current: 75A Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated Max. off-state voltage: 200V Load current: 2A |
на замовлення 2012 шт: термін постачання 21-30 дні (днів) |
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EGP20D-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 75A; DO15; 50ns Mounting: THT Case: DO15 Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1mA Capacitance: 70pF Type of diode: rectifying Reverse recovery time: 50ns Max. forward impulse current: 75A Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated Max. off-state voltage: 200V Load current: 2A |
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EGP20D-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 75A; DO15; 50ns Mounting: THT Case: DO15 Kind of package: Ammo Pack Semiconductor structure: single diode Leakage current: 0.1mA Capacitance: 70pF Type of diode: rectifying Reverse recovery time: 50ns Max. forward impulse current: 75A Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated Max. off-state voltage: 200V Load current: 2A |
на замовлення 3500 шт: термін постачання 21-30 дні (днів) |
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GPP20D-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 12pF Kind of package: reel; tape Max. forward impulse current: 70A Case: DO15 Max. forward voltage: 1.1V Leakage current: 50µA |
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VLMP20D2G1-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; Mini PLCC2; green; 0.56÷2.24mcd; 2.3x1.3x1.4mm; 60°; 15mA Type of diode: LED Mounting: SMD Case: Mini PLCC2 LED colour: green Luminosity: 0.56...2.24mcd Dimensions: 2.3x1.3x1.4mm Viewing angle: 60° LED current: 15mA Wavelength: 555...565nm Front: flat Operating voltage: 1.8...2.2V |
на замовлення 1086 шт: термін постачання 21-30 дні (днів) |
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IRFIZ34GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
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CRCW0402200RFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 200Ω; 62.5mW; ±1%; -55÷155°C Operating temperature: -55...155°C Type of resistor: thick film Power: 62.5mW Resistance: 200Ω Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 50V Case - mm: 1005 Case - inch: 0402 Mounting: SMD |
на замовлення 4600 шт: термін постачання 21-30 дні (днів) |
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CRCW0402200KFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 200kΩ; 62.5mW; ±1%; -55÷155°C Operating temperature: -55...155°C Type of resistor: thick film Power: 62.5mW Resistance: 200kΩ Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 50V Case - mm: 1005 Case - inch: 0402 Mounting: SMD |
на замовлення 3300 шт: термін постачання 21-30 дні (днів) |
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BZM55C12-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; MicroMELF; single diode Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: MicroMELF Zener voltage: 12V Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W |
на замовлення 8475 шт: термін постачання 21-30 дні (днів) |
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| SIR680ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 125A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 83nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V |
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| SiR680DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 200A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V |
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| SIR680LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A Mounting: SMD Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 130A On-state resistance: 3.55mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 135nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V |
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| SIDR680ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137A; Idm: 300A Mounting: SMD Kind of package: reel; tape Pulsed drain current: 300A Drain-source voltage: 80V Drain current: 137A On-state resistance: 3.5mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 83nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V |
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| SIDR680DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A Mounting: SMD Kind of package: reel; tape Pulsed drain current: 200A Drain-source voltage: 80V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V |
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SG3R6800JR18 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 680mΩ; 3W; ±5%; Ø4.8x13mm; -55÷250°C Type of resistor: wire-wound Mounting: THT Resistance: 0.68Ω Power: 3W Tolerance: ±5% Max. operating voltage: 100V Body dimensions: Ø4.8x13mm Leads dimensions: Ø0.8x25mm Operating temperature: -55...250°C Resistor features: non-flammable Temperature coefficient: 150ppm/°C Leads: axial |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| SUM90142E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO263 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET |
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| SUP90140E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO220AB Mounting: THT Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 96nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 18mΩ Type of transistor: N-MOSFET |
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| SUP90142E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO220AB Mounting: THT Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 16.9mΩ Type of transistor: N-MOSFET |
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| GSC00AK4702EARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 47uF; 250VDC; ±20%; -40÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 47µF Operating voltage: 250V DC Tolerance: ±20% Mounting: SMD Operating temperature: -40...105°C Capacitors series: GSC Height: 16.5mm Dimensions: 16x16.5mm Nominal life: 2000h |
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| GSC00CX4702CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 47uF; 160VDC; ±20%; -40÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 47µF Operating voltage: 160V DC Tolerance: ±20% Operating temperature: -40...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 12.5x16mm Height: 16mm |
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SSA33L-E3/5AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.38V Case: SMA Kind of package: reel; tape Leakage current: 35mA Max. forward impulse current: 75A |
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SSA33L-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: SMA Kind of package: reel; tape Max. forward impulse current: 75A |
на замовлення 3127 шт: термін постачання 21-30 дні (днів) |
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CRCW06033R30FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.3Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.3Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 8800 шт: термін постачання 21-30 дні (днів) |
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P600J-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 0.4kA Case: P600 Max. forward voltage: 0.9V Reverse recovery time: 2.5µs |
на замовлення 1037 шт: термін постачання 21-30 дні (днів) |
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BZT52C16-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52 |
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| Si4430BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 60A; 3W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 60A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI4430BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 60A; 3W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 60A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced |
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| GSC00BM1011EARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 100uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 100µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 6.3x7.7mm Height: 7.7mm |
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| GSC00BM1011ETFL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 100uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 100µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 6.3x7.7mm Height: 7.7mm |
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| GSC00AG3311VTNL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 330µF Operating voltage: 35V DC Capacitors series: GSC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 10x10mm Height: 10mm Nominal life: 2000h |
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| SISS65DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; 75.2A; Idm: -120A Mounting: SMD Kind of package: reel; tape Pulsed drain current: -120A Type of transistor: P-MOSFET Power dissipation: 42.1W Polarisation: unipolar Drain current: 75.2A Drain-source voltage: -30V Case: PowerPAK® 1212-8 Gate charge: 138nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 7.5mΩ |
товар відсутній |
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| MAL209524681E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 680uF; 420VDC; Ø40x60mm; ±20% Mounting: SNAP-IN Operating temperature: -40...85°C Tolerance: ±20% Body dimensions: Ø40x60mm Type of capacitor: electrolytic Capacitance: 680µF Operating voltage: 420V DC Service life: 10000h |
товар відсутній |
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| MAL209527102E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 1mF; 450VDC; Ø40x100mm; ±20% Mounting: SNAP-IN Operating temperature: -40...85°C Body dimensions: Ø40x100mm Type of capacitor: electrolytic Capacitance: 1mF Operating voltage: 450V DC Tolerance: ±20% Service life: 10000h |
товар відсутній |
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| MAL209537152E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 450VDC; Ø45x100mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 1.5mF Operating voltage: 450V DC Body dimensions: Ø45x100mm Tolerance: ±20% Service life: 10000h Operating temperature: -40...85°C |
товар відсутній |
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VS-KBPC602PBF | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 125A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 125A Version: square Case: KBPC6 Electrical mounting: THT Leads: wire Ø 1.1mm Kind of package: bulk Max. forward voltage: 1.2V |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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| SIHA24N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 51A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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SMBJ33CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 37.3V; 11.5A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 37.3V Max. forward impulse current: 11.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товар відсутній |
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SMBJ33D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 37.3V; 11.5A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 37.3V Max. forward impulse current: 11.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товар відсутній |
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CRCW0805237RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 237Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 237Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
товар відсутній |
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CRCW08055K11FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 5.11kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 5.11kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 18500 шт: термін постачання 21-30 дні (днів) |
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CRCW080511R0FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 11Ω; 0.125W; ±1%; -55÷155°C Mounting: SMD Operating temperature: -55...155°C Case - mm: 2012 Power: 0.125W Case - inch: 0805 Resistance: 11Ω Tolerance: ±1% Max. operating voltage: 150V Type of resistor: thick film |
на замовлення 26300 шт: термін постачання 21-30 дні (днів) |
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CRCW080511R3FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 11.3Ω; 0.125W; ±1%; -55÷155°C Mounting: SMD Operating temperature: -55...155°C Case - mm: 2012 Power: 0.125W Case - inch: 0805 Resistance: 11.3Ω Tolerance: ±1% Max. operating voltage: 150V Type of resistor: thick film |
на замовлення 1674 шт: термін постачання 21-30 дні (днів) |
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CRCW080511R5FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 11.5Ω; 0.125W; ±1%; -55÷155°C Mounting: SMD Operating temperature: -55...155°C Case - mm: 2012 Power: 0.125W Case - inch: 0805 Resistance: 11.5Ω Tolerance: ±1% Max. operating voltage: 150V Type of resistor: thick film |
товар відсутній |
| F332K69Y5RN63K7R |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; 3.3nF; 1kV; ±10%; THT; 7.5mm
Type of capacitor: ceramic
Capacitance: 3.3nF
Mounting: THT
Tolerance: ±10%
Terminal pitch: 7.5mm
Operating temperature: -30...125°C
Operating voltage: 1kV
Category: THT ceramic capacitors
Description: Capacitor: ceramic; 3.3nF; 1kV; ±10%; THT; 7.5mm
Type of capacitor: ceramic
Capacitance: 3.3nF
Mounting: THT
Tolerance: ±10%
Terminal pitch: 7.5mm
Operating temperature: -30...125°C
Operating voltage: 1kV
товар відсутній
| VJ0402Y332KXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3nF; 50V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 3.3nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.3nF; 50V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 3.3nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 600+ | 0.67 грн |
| 1000+ | 0.4 грн |
| P4SMA200A-E3/61 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 190V; 1.1A; unidirectional; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 171V
Breakdown voltage: 190V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P4SMA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 190V; 1.1A; unidirectional; SMA; reel,tape; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 171V
Breakdown voltage: 190V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P4SMA
товар відсутній
| SM6T33A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
на замовлення 470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.18 грн |
| 50+ | 7.23 грн |
| 100+ | 6.4 грн |
| 155+ | 5.26 грн |
| 425+ | 4.98 грн |
| SQ3461EV-T1_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.6A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P6SMB36A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB36A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB36A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB36A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| SM6T36A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
на замовлення 1615 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 33+ | 11.38 грн |
| 52+ | 6.75 грн |
| 100+ | 5.98 грн |
| 156+ | 5.18 грн |
| 428+ | 4.9 грн |
| SM6T36CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
на замовлення 3300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.71 грн |
| 19+ | 18.5 грн |
| 27+ | 13.35 грн |
| 100+ | 10.57 грн |
| 134+ | 5.98 грн |
| 367+ | 5.7 грн |
| VJ0603A220JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 22pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 22pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 21500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.39 грн |
| 1000+ | 0.39 грн |
| 3100+ | 0.26 грн |
| 8400+ | 0.25 грн |
| VJ0201A220JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22pF; 50V; C0G (NP0); ±5%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 22pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22pF; 50V; C0G (NP0); ±5%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 22pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...125°C
товар відсутній
| VJ0402Y392KXAAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 50V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 50V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
на замовлення 3880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.05 грн |
| 100+ | 5.49 грн |
| 320+ | 2.54 грн |
| 880+ | 2.4 грн |
| VJ0805A392JXATW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ0805Y392KXCCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 200V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 200V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 200V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 200V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ1812A392GXCAT |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 200V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 200V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
товар відсутній
| EGP20D-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 75A; DO15; 50ns
Mounting: THT
Case: DO15
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Capacitance: 70pF
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 200V
Load current: 2A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 75A; DO15; 50ns
Mounting: THT
Case: DO15
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Capacitance: 70pF
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 200V
Load current: 2A
на замовлення 2012 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 29.73 грн |
| 15+ | 23.64 грн |
| 43+ | 18.3 грн |
| 118+ | 17.3 грн |
| 2000+ | 16.9 грн |
| EGP20D-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 75A; DO15; 50ns
Mounting: THT
Case: DO15
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Capacitance: 70pF
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 200V
Load current: 2A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 75A; DO15; 50ns
Mounting: THT
Case: DO15
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Capacitance: 70pF
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 200V
Load current: 2A
товар відсутній
| EGP20D-E3/73 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 75A; DO15; 50ns
Mounting: THT
Case: DO15
Kind of package: Ammo Pack
Semiconductor structure: single diode
Leakage current: 0.1mA
Capacitance: 70pF
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 200V
Load current: 2A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 75A; DO15; 50ns
Mounting: THT
Case: DO15
Kind of package: Ammo Pack
Semiconductor structure: single diode
Leakage current: 0.1mA
Capacitance: 70pF
Type of diode: rectifying
Reverse recovery time: 50ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Features of semiconductor devices: glass passivated
Max. off-state voltage: 200V
Load current: 2A
на замовлення 3500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 31.6 грн |
| 25+ | 26.43 грн |
| 39+ | 20.32 грн |
| 106+ | 19.21 грн |
| GPP20D-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 70A; DO15; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO15
Max. forward voltage: 1.1V
Leakage current: 50µA
товар відсутній
| VLMP20D2G1-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; Mini PLCC2; green; 0.56÷2.24mcd; 2.3x1.3x1.4mm; 60°; 15mA
Type of diode: LED
Mounting: SMD
Case: Mini PLCC2
LED colour: green
Luminosity: 0.56...2.24mcd
Dimensions: 2.3x1.3x1.4mm
Viewing angle: 60°
LED current: 15mA
Wavelength: 555...565nm
Front: flat
Operating voltage: 1.8...2.2V
Category: SMD colour LEDs
Description: LED; SMD; Mini PLCC2; green; 0.56÷2.24mcd; 2.3x1.3x1.4mm; 60°; 15mA
Type of diode: LED
Mounting: SMD
Case: Mini PLCC2
LED colour: green
Luminosity: 0.56...2.24mcd
Dimensions: 2.3x1.3x1.4mm
Viewing angle: 60°
LED current: 15mA
Wavelength: 555...565nm
Front: flat
Operating voltage: 1.8...2.2V
на замовлення 1086 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.34 грн |
| 22+ | 16.48 грн |
| 100+ | 10.5 грн |
| 108+ | 7.44 грн |
| 298+ | 7.02 грн |
| IRFIZ34GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| CRCW0402200RFKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 200Ω; 62.5mW; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 62.5mW
Resistance: 200Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 200Ω; 62.5mW; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 62.5mW
Resistance: 200Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
на замовлення 4600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.91 грн |
| 1000+ | 0.37 грн |
| CRCW0402200KFKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 200kΩ; 62.5mW; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 62.5mW
Resistance: 200kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 200kΩ; 62.5mW; ±1%; -55÷155°C
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 62.5mW
Resistance: 200kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 50V
Case - mm: 1005
Case - inch: 0402
Mounting: SMD
на замовлення 3300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.91 грн |
| 1000+ | 0.37 грн |
| BZM55C12-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; MicroMELF; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MicroMELF
Zener voltage: 12V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; MicroMELF; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MicroMELF
Zener voltage: 12V
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
на замовлення 8475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.15 грн |
| 150+ | 2.63 грн |
| 400+ | 1.99 грн |
| 1100+ | 1.88 грн |
| SIR680ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 125A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 125A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 125A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| SiR680DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 200A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 200A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| SIR680LDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 130A
On-state resistance: 3.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 135nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 130A; Idm: 300A
Mounting: SMD
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 130A
On-state resistance: 3.55mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 135nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| SIDR680ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 137A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 137A; Idm: 300A
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 300A
Drain-source voltage: 80V
Drain current: 137A
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 83nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| SIDR680DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 200A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 100A; Idm: 200A
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 200A
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| SG3R6800JR18 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 680mΩ; 3W; ±5%; Ø4.8x13mm; -55÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.68Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 100V
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -55...250°C
Resistor features: non-flammable
Temperature coefficient: 150ppm/°C
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 680mΩ; 3W; ±5%; Ø4.8x13mm; -55÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.68Ω
Power: 3W
Tolerance: ±5%
Max. operating voltage: 100V
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -55...250°C
Resistor features: non-flammable
Temperature coefficient: 150ppm/°C
Leads: axial
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| SUM90142E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO263
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO263
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
товар відсутній
| SUP90140E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
товар відсутній
| SUP90142E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 16.9mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 16.9mΩ
Type of transistor: N-MOSFET
товар відсутній
| GSC00AK4702EARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 250VDC; ±20%; -40÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 47µF
Operating voltage: 250V DC
Tolerance: ±20%
Mounting: SMD
Operating temperature: -40...105°C
Capacitors series: GSC
Height: 16.5mm
Dimensions: 16x16.5mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 250VDC; ±20%; -40÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 47µF
Operating voltage: 250V DC
Tolerance: ±20%
Mounting: SMD
Operating temperature: -40...105°C
Capacitors series: GSC
Height: 16.5mm
Dimensions: 16x16.5mm
Nominal life: 2000h
товар відсутній
| GSC00CX4702CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 160VDC; ±20%; -40÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 160V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 12.5x16mm
Height: 16mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 160VDC; ±20%; -40÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 160V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 12.5x16mm
Height: 16mm
товар відсутній
| SSA33L-E3/5AT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMA
Kind of package: reel; tape
Leakage current: 35mA
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMA
Kind of package: reel; tape
Leakage current: 35mA
Max. forward impulse current: 75A
товар відсутній
| SSA33L-E3/61T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 75A
на замовлення 3127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.1 грн |
| 90+ | 8.88 грн |
| 245+ | 8.39 грн |
| CRCW06033R30FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.3Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.3Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.3Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.3Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 8800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.49 грн |
| 500+ | 0.76 грн |
| 1000+ | 0.61 грн |
| 1500+ | 0.57 грн |
| 4000+ | 0.54 грн |
| P600J-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 0.9V
Reverse recovery time: 2.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; reel,tape; Ifsm: 400A; P600; 2.5us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Case: P600
Max. forward voltage: 0.9V
Reverse recovery time: 2.5µs
на замовлення 1037 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.92 грн |
| 8+ | 46.11 грн |
| 10+ | 39.57 грн |
| 25+ | 36.3 грн |
| 38+ | 21.7 грн |
| 102+ | 20.52 грн |
| BZT52C16-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52
товар відсутній
| Si4430BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 60A; 3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 60A; 3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4430BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 60A; 3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 60A; 3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| GSC00BM1011EARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x7.7mm
Height: 7.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x7.7mm
Height: 7.7mm
товар відсутній
| GSC00BM1011ETFL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x7.7mm
Height: 7.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x7.7mm
Height: 7.7mm
товар відсутній
| GSC00AG3311VTNL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 330µF
Operating voltage: 35V DC
Capacitors series: GSC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 10x10mm
Height: 10mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 330µF
Operating voltage: 35V DC
Capacitors series: GSC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 10x10mm
Height: 10mm
Nominal life: 2000h
товар відсутній
| SISS65DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; 75.2A; Idm: -120A
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -120A
Type of transistor: P-MOSFET
Power dissipation: 42.1W
Polarisation: unipolar
Drain current: 75.2A
Drain-source voltage: -30V
Case: PowerPAK® 1212-8
Gate charge: 138nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; 75.2A; Idm: -120A
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -120A
Type of transistor: P-MOSFET
Power dissipation: 42.1W
Polarisation: unipolar
Drain current: 75.2A
Drain-source voltage: -30V
Case: PowerPAK® 1212-8
Gate charge: 138nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
товар відсутній
| MAL209524681E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 420VDC; Ø40x60mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...85°C
Tolerance: ±20%
Body dimensions: Ø40x60mm
Type of capacitor: electrolytic
Capacitance: 680µF
Operating voltage: 420V DC
Service life: 10000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 420VDC; Ø40x60mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...85°C
Tolerance: ±20%
Body dimensions: Ø40x60mm
Type of capacitor: electrolytic
Capacitance: 680µF
Operating voltage: 420V DC
Service life: 10000h
товар відсутній
| MAL209527102E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1mF; 450VDC; Ø40x100mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...85°C
Body dimensions: Ø40x100mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 10000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1mF; 450VDC; Ø40x100mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...85°C
Body dimensions: Ø40x100mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 10000h
товар відсутній
| MAL209537152E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 450VDC; Ø45x100mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 1.5mF
Operating voltage: 450V DC
Body dimensions: Ø45x100mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1.5mF; 450VDC; Ø45x100mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 1.5mF
Operating voltage: 450V DC
Body dimensions: Ø45x100mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...85°C
товар відсутній
| VS-KBPC602PBF |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 125A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Max. forward voltage: 1.2V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 125A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Max. forward voltage: 1.2V
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.69 грн |
| 5+ | 180.12 грн |
| 7+ | 130.74 грн |
| SIHA24N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SMBJ33CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 37.3V; 11.5A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 37.3V
Max. forward impulse current: 11.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 37.3V; 11.5A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 37.3V
Max. forward impulse current: 11.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| SMBJ33D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 37.3V; 11.5A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 37.3V
Max. forward impulse current: 11.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 37.3V; 11.5A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 37.3V
Max. forward impulse current: 11.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| CRCW0805237RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 237Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 237Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 237Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 237Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній
| CRCW08055K11FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 5.11kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 5.11kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 5.11kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 5.11kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 18500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.88 грн |
| 500+ | 0.92 грн |
| 1000+ | 0.56 грн |
| 5000+ | 0.2 грн |
| 15000+ | 0.19 грн |
| CRCW080511R0FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 11Ω; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 2012
Power: 0.125W
Case - inch: 0805
Resistance: 11Ω
Tolerance: ±1%
Max. operating voltage: 150V
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 11Ω; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 2012
Power: 0.125W
Case - inch: 0805
Resistance: 11Ω
Tolerance: ±1%
Max. operating voltage: 150V
Type of resistor: thick film
на замовлення 26300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.99 грн |
| 500+ | 1.02 грн |
| 1000+ | 0.63 грн |
| 2400+ | 0.34 грн |
| 5000+ | 0.31 грн |
| CRCW080511R3FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 11.3Ω; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 2012
Power: 0.125W
Case - inch: 0805
Resistance: 11.3Ω
Tolerance: ±1%
Max. operating voltage: 150V
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 11.3Ω; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 2012
Power: 0.125W
Case - inch: 0805
Resistance: 11.3Ω
Tolerance: ±1%
Max. operating voltage: 150V
Type of resistor: thick film
на замовлення 1674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.99 грн |
| 500+ | 1.02 грн |
| 1000+ | 0.63 грн |
| CRCW080511R5FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 11.5Ω; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 2012
Power: 0.125W
Case - inch: 0805
Resistance: 11.5Ω
Tolerance: ±1%
Max. operating voltage: 150V
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 11.5Ω; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Case - mm: 2012
Power: 0.125W
Case - inch: 0805
Resistance: 11.5Ω
Tolerance: ±1%
Max. operating voltage: 150V
Type of resistor: thick film
товар відсутній