| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIHP11N80E-GE3 | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 32A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
IRF610PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.1A; 36W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.1A Power dissipation: 36W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced |
на замовлення 856 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
IRF710PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.2A Power dissipation: 36W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1559 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
IRF710SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 36W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
CRCW120662K0JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 62kΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 62kΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 2200 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BAS70-04-E3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: double series Features of semiconductor devices: small signal Max. forward voltage: 1V Case: SOT23 Kind of package: reel; tape Leakage current: 0.1µA Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 2800 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BAS70-04-E3-18 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: double series Features of semiconductor devices: small signal Capacitance: 1.5F Max. forward voltage: 0.41V Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
на замовлення 11120 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BAS70-04-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: double series Features of semiconductor devices: small signal Capacitance: 2pF Max. forward voltage: 1V Case: SOT23 Kind of package: reel; tape Leakage current: 0.1µA Max. forward impulse current: 0.2A Power dissipation: 0.2W |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MBR745-E3/45 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.57V |
на замовлення 1706 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
SI4401DDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -16.1A; Idm: -50A; 4W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -16.1A Pulsed drain current: -50A Power dissipation: 4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3504 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| TLHF4601 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; orange; 40÷125mcd; 60°; Front: convex; 2÷2.6V Type of diode: LED LED diameter: 3mm LED colour: orange Luminosity: 40...125mcd Viewing angle: 60° Wavelength: 602...609nm LED lens: diffused; orange LED current: 10mA Mounting: THT Front: convex Number of terminals: 2 Terminal pitch: 2.54mm Operating voltage: 2...2.6V |
товар відсутній |
||||||||||||||
 |
GRC00AA3301HTFL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 33uF; 50VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Capacitance: 33µF Operating voltage: 50V DC Mounting: THT Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 5x11mm Service life: 2000h |
товар відсутній |
|||||||||||||
|
|
GRC00AA3301HTNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 33uF; 50VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Capacitance: 33µF Operating voltage: 50V DC Mounting: THT Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 5x11mm Service life: 2000h |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| VSSAF56HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 5A; DO221AC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Capacitance: 540pF Max. forward voltage: 0.62V Case: DO221AC Kind of package: reel; tape Max. forward impulse current: 100A |
товар відсутній |
||||||||||||||
 |
GRC00JD1021V00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Pitch: 7.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 35V DC Terminal pitch: 7.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x16mm |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 +1 |
MAL213660102E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Ø16x20mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 35V DC Body dimensions: Ø16x20mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 7000h Operating temperature: -55...105°C |
на замовлення 256 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 +1 |
MAL215090106E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Ø16x20mm; Pitch: 7.5mm Mounting: THT Terminal pitch: 7.5mm Tolerance: ±20% Body dimensions: Ø16x20mm Type of capacitor: electrolytic Capacitance: 1mF Operating voltage: 35V DC Service life: 7000h |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SI2343CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Pulsed drain current: -25A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| MAL215952122E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 1.2mF; 200VDC; Ø35x35mm; ±20% Body dimensions: Ø35x35mm Operating temperature: -40...105°C Tolerance: ±20% Terminal pitch: 10mm Mounting: SNAP-IN Type of capacitor: electrolytic Capacitance: 1.2mF Operating voltage: 200V DC Service life: 5000h |
товар відсутній |
||||||||||||||
 |
VJ1210V106ZXZTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10uF; 35V; Y5V; -20÷80%; SMD; 1210 Type of capacitor: ceramic Capacitance: 10µF Operating voltage: 35V Dielectric: Y5V Tolerance: -20...80% Mounting: SMD Case - inch: 1210 Case - mm: 3225 Operating temperature: -25...85°C |
товар відсутній |
|||||||||||||
 |
293D106X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 10uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Case: C Mounting: SMD Operating temperature: -55...125°C Tolerance: ±10% Type of capacitor: tantalum Case - mm: 6032 Case - inch: 2312 Capacitance: 10µF Operating voltage: 10V DC Capacitors series: Tantamount |
товар відсутній |
|||||||||||||
 |
TLMS1000-GS15 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0603; red; 1.8÷4mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.6V; 2mA Type of diode: LED Mounting: SMD Case: 0603 LED colour: red Luminosity: 1.8...4mcd Dimensions: 1.6x0.8x0.6mm Viewing angle: 80° LED current: 2mA Wavelength: 624...636nm Front: flat Operating voltage: 1.8...2.6V |
товар відсутній |
|||||||||||||
 |
VS-30ETH06-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; 77ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 33pF Kind of package: tube Max. forward impulse current: 200A Case: TO220AC Max. forward voltage: 1.75V Leakage current: 0.5mA Heatsink thickness: 1.14...1.4mm Reverse recovery time: 77ns |
на замовлення 344 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MAL202114472E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 4.7mF; 10VDC; Ø15x30mm; ±20%; 8000h Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 10V DC Body dimensions: Ø15x30mm Tolerance: ±20% Leads: axial Service life: 8000h Operating temperature: -40...85°C |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
GRC00FG4721ATNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 4700uF; 10VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 10V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 12.5x25mm |
на замовлення 460 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| SIHG80N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: THT Gate charge: 443nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| SIHG80N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 254A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
ES1D-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape Mounting: SMD Case: DO214AC; SMA Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching |
на замовлення 12397 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
ES1DHE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Mounting: SMD Case: DO214AC; SMA Capacitance: 10pF Max. off-state voltage: 200V Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Leakage current: 0.1mA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching |
товар відсутній |
|||||||||||||
|
|
RS1J-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Max. forward impulse current: 30A Leakage current: 50µA Case: DO214AC; SMA Kind of package: reel; tape Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns Type of diode: rectifying |
товар відсутній |
|||||||||||||
 |
RS1J-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 7pF Max. forward impulse current: 30A Case: DO214AC; SMA Kind of package: reel; tape Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns Type of diode: rectifying |
на замовлення 6122 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MAL211890511E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 220uF; 40VDC; Ø10x25mm; ±20%; 4000h Type of capacitor: electrolytic Mounting: THT Capacitance: 220µF Operating voltage: 40V DC Body dimensions: Ø10x25mm Tolerance: ±20% Leads: axial Service life: 4000h Operating temperature: -40...125°C |
товар відсутній |
|||||||||||||
 |
MAL211890513E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 4000h Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Body dimensions: Ø10x25mm Tolerance: ±20% Leads: axial Service life: 4000h Operating temperature: -40...125°C |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SI4816BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.6/6.5A On-state resistance: 18.5/11.5mΩ Type of transistor: N-MOSFET x2 + Schottky Power dissipation: 0.64/0.8W Polarisation: unipolar Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 10/18nC Technology: LITTLE FOOT® Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
|||||||||||||
|
|
SI4816BDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V Case: SO8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.6/6.5A On-state resistance: 18.5/11.5mΩ Type of transistor: N-MOSFET x2 + Schottky Power dissipation: 0.64/0.8W Polarisation: unipolar Features of semiconductor devices: Half-Bridge Power MOSFET Gate charge: 10/18nC Technology: LITTLE FOOT® Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
|||||||||||||
|
|
SI4835DDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 5.6W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 65nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±25V Type of transistor: P-MOSFET Power dissipation: 5.6W On-state resistance: 30mΩ Drain current: -7.7A Drain-source voltage: -30V |
на замовлення 4097 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SI4835DDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13A; Idm: -50A; 3.6W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 65nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±25V Pulsed drain current: -50A Type of transistor: P-MOSFET Power dissipation: 3.6W On-state resistance: 18mΩ Drain current: -13A Drain-source voltage: -30V |
на замовлення 697 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SI4840BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 19A; Idm: 50A; 3.8W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 19A Pulsed drain current: 50A Power dissipation: 3.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
SI4850EY-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; 3.3W; SO8 Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 7.1A On-state resistance: 47mΩ Type of transistor: N-MOSFET Power dissipation: 3.3W Polarisation: unipolar Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD |
на замовлення 3157 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SI4850EY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 40A; 1.2W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 27nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A Type of transistor: N-MOSFET Power dissipation: 1.2W On-state resistance: 22mΩ Drain current: 6A Drain-source voltage: 60V |
товар відсутній |
|||||||||||||
|
|
SI4894BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
SI4896DY-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; 3.1W; SO8 Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 41nC Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Type of transistor: N-MOSFET Power dissipation: 3.1W On-state resistance: 22mΩ Drain current: 7.6A Drain-source voltage: 80V |
товар відсутній |
|||||||||||||
 |
MBR1045-E3/45 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.57V |
товар відсутній |
|||||||||||||
| VS-MBR1045-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10A; TO247AC; tube; Ir: 15mA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 600pF Case: TO247AC Kind of package: tube Max. forward impulse current: 1.06kA Max. forward voltage: 0.57V Leakage current: 15mA |
товар відсутній |
||||||||||||||
|
|
Si9433BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1343 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
SI9435BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2727 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW1206110KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 110kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 110kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW1206510KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 510kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 510kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 16900 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW1206510KJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 510kΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 510kΩ Tolerance: ±5% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 697 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
TZMB5V1-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: MiniMELF Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 9435 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BZM55B5V1-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode Leakage current: 2µA Manufacturer series: BZM55 |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
IRFPG30PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 125W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
IRFBG30PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO220AB Case: TO220AB Drain-source voltage: 1kV Drain current: 2A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT |
на замовлення 483 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
MBR1560CT-E3/45 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 7.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 150A Max. forward voltage: 0.85V |
товар відсутній |
|||||||||||||
 |
VR25000001004JA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 1MΩ; 250mW; ±5%; Ø2.5x6.5mm; 200ppm/°C Type of resistor: metal glaze Mounting: THT Resistance: 1MΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 1.6kV Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø580µmx52mm Temperature coefficient: 200ppm/°C |
на замовлення 810 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
VR25000001005JA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 10MΩ; 250mW; ±5%; Ø2.5x6.5mm; 200ppm/°C Mounting: THT Resistance: 10MΩ Tolerance: ±5% Type of resistor: metal glaze Power: 0.25W Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø580µmx52mm Temperature coefficient: 200ppm/°C Max. operating voltage: 1.6kV |
на замовлення 570 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
VR25000004704JA100 | VISHAY |
Category: THT Resistors Description: Resistor: metal glaze; THT; 4.7MΩ; 250mW; ±5%; Ø2.5x6.5mm Type of resistor: metal glaze Mounting: THT Resistance: 4.7MΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 1.6kV Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø580µmx52mm Temperature coefficient: 200ppm/°C |
товар відсутній |
|||||||||||||
 |
VJ1812A183FXAAT | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 18nF; 50V; C0G (NP0); ±1%; SMD; 1812 Type of capacitor: ceramic Capacitance: 18nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
|
|
VJ1812Y683JXCAT | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 68nF; 200V; X7R; ±5%; SMD; 1812 Type of capacitor: ceramic Capacitance: 68nF Operating voltage: 200V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
товар відсутній |
|||||||||||||
|
|
VJ1812Y683KXLTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 68nF; 630V; X7R; ±10%; SMD; 1812 Type of capacitor: ceramic Capacitance: 68nF Operating voltage: 630V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
товар відсутній |
| SIHP11N80E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF610PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.1A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.1A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.1A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.1A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 856 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.16 грн |
| 18+ | 20.2 грн |
| 50+ | 16.39 грн |
| 136+ | 15.49 грн |
| 250+ | 15.15 грн |
| IRF710PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1559 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.81 грн |
| 12+ | 30.86 грн |
| 33+ | 24.49 грн |
| 90+ | 23.15 грн |
| 1000+ | 22.83 грн |
| IRF710SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.61 грн |
| 10+ | 37.09 грн |
| 26+ | 31.14 грн |
| 72+ | 29.06 грн |
| CRCW120662K0JNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 62kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 62kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 62kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 62kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 2200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.99 грн |
| 500+ | 1.08 грн |
| 1000+ | 0.69 грн |
| BAS70-04-E3-08 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.87 грн |
| 155+ | 2.23 грн |
| 455+ | 1.79 грн |
| 1240+ | 1.7 грн |
| BAS70-04-E3-18 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Capacitance: 1.5F
Max. forward voltage: 0.41V
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Capacitance: 1.5F
Max. forward voltage: 0.41V
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
на замовлення 11120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.07 грн |
| 140+ | 2.48 грн |
| 425+ | 1.9 грн |
| 1165+ | 1.8 грн |
| BAS70-04-HE3-08 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.2A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.2A
Power dissipation: 0.2W
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 5.89 грн |
| 110+ | 3.22 грн |
| 330+ | 2.47 грн |
| 900+ | 2.34 грн |
| MBR745-E3/45 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.57V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.57V
на замовлення 1706 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.5 грн |
| 10+ | 36.05 грн |
| 30+ | 27.66 грн |
| 81+ | 26.15 грн |
| SI4401DDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16.1A; Idm: -50A; 4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -16.1A
Pulsed drain current: -50A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -16.1A; Idm: -50A; 4W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -16.1A
Pulsed drain current: -50A
Power dissipation: 4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 29.81 грн |
| 25+ | 24.98 грн |
| 43+ | 19.03 грн |
| 116+ | 17.99 грн |
| TLHF4601 |
|
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; orange; 40÷125mcd; 60°; Front: convex; 2÷2.6V
Type of diode: LED
LED diameter: 3mm
LED colour: orange
Luminosity: 40...125mcd
Viewing angle: 60°
Wavelength: 602...609nm
LED lens: diffused; orange
LED current: 10mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 2...2.6V
Category: THT LEDs Round
Description: LED; 3mm; orange; 40÷125mcd; 60°; Front: convex; 2÷2.6V
Type of diode: LED
LED diameter: 3mm
LED colour: orange
Luminosity: 40...125mcd
Viewing angle: 60°
Wavelength: 602...609nm
LED lens: diffused; orange
LED current: 10mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 2...2.6V
товар відсутній
| GRC00AA3301HTFL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 33µF
Operating voltage: 50V DC
Mounting: THT
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 5x11mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 33µF
Operating voltage: 50V DC
Mounting: THT
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 5x11mm
Service life: 2000h
товар відсутній
| GRC00AA3301HTNL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 33µF
Operating voltage: 50V DC
Mounting: THT
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 5x11mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 50VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Capacitance: 33µF
Operating voltage: 50V DC
Mounting: THT
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 5x11mm
Service life: 2000h
на замовлення 470 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.96 грн |
| 100+ | 3.54 грн |
| 130+ | 2.71 грн |
| VSSAF56HM3-A/H |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; DO221AC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 540pF
Max. forward voltage: 0.62V
Case: DO221AC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 5A; DO221AC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 540pF
Max. forward voltage: 0.62V
Case: DO221AC
Kind of package: reel; tape
Max. forward impulse current: 100A
товар відсутній
| GRC00JD1021V00L |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 35V DC
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x16mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 35V DC
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x16mm
на замовлення 265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.2 грн |
| 13+ | 26.85 грн |
| 50+ | 19.17 грн |
| 62+ | 13.08 грн |
| 171+ | 12.39 грн |
| MAL213660102E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Ø16x20mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 35V DC
Body dimensions: Ø16x20mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 7000h
Operating temperature: -55...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Ø16x20mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 35V DC
Body dimensions: Ø16x20mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 7000h
Operating temperature: -55...105°C
на замовлення 256 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.72 грн |
| 10+ | 114.17 грн |
| 11+ | 75.42 грн |
| 30+ | 71.27 грн |
| MAL215090106E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Ø16x20mm; Pitch: 7.5mm
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Body dimensions: Ø16x20mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 35V DC
Service life: 7000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 35VDC; Ø16x20mm; Pitch: 7.5mm
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Body dimensions: Ø16x20mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 35V DC
Service life: 7000h
на замовлення 68 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.94 грн |
| 10+ | 85.22 грн |
| 27+ | 80.57 грн |
| SI2343CDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Pulsed drain current: -25A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 35.02 грн |
| 13+ | 28.78 грн |
| 25+ | 22.97 грн |
| 68+ | 11.9 грн |
| 185+ | 11.21 грн |
| MAL215952122E3 |
|
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1.2mF; 200VDC; Ø35x35mm; ±20%
Body dimensions: Ø35x35mm
Operating temperature: -40...105°C
Tolerance: ±20%
Terminal pitch: 10mm
Mounting: SNAP-IN
Type of capacitor: electrolytic
Capacitance: 1.2mF
Operating voltage: 200V DC
Service life: 5000h
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 1.2mF; 200VDC; Ø35x35mm; ±20%
Body dimensions: Ø35x35mm
Operating temperature: -40...105°C
Tolerance: ±20%
Terminal pitch: 10mm
Mounting: SNAP-IN
Type of capacitor: electrolytic
Capacitance: 1.2mF
Operating voltage: 200V DC
Service life: 5000h
товар відсутній
| VJ1210V106ZXZTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10uF; 35V; Y5V; -20÷80%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 10µF
Operating voltage: 35V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -25...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10uF; 35V; Y5V; -20÷80%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 10µF
Operating voltage: 35V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -25...85°C
товар відсутній
| 293D106X9010C2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Case: C
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±10%
Type of capacitor: tantalum
Case - mm: 6032
Case - inch: 2312
Capacitance: 10µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Case: C
Mounting: SMD
Operating temperature: -55...125°C
Tolerance: ±10%
Type of capacitor: tantalum
Case - mm: 6032
Case - inch: 2312
Capacitance: 10µF
Operating voltage: 10V DC
Capacitors series: Tantamount
товар відсутній
| TLMS1000-GS15 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; red; 1.8÷4mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.6V; 2mA
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: red
Luminosity: 1.8...4mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 2mA
Wavelength: 624...636nm
Front: flat
Operating voltage: 1.8...2.6V
Category: SMD colour LEDs
Description: LED; SMD; 0603; red; 1.8÷4mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.6V; 2mA
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: red
Luminosity: 1.8...4mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 2mA
Wavelength: 624...636nm
Front: flat
Operating voltage: 1.8...2.6V
товар відсутній
| VS-30ETH06-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; 77ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 33pF
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.75V
Leakage current: 0.5mA
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 77ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; 77ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 33pF
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.75V
Leakage current: 0.5mA
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 77ns
на замовлення 344 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.47 грн |
| 8+ | 110.71 грн |
| 21+ | 104.48 грн |
| 250+ | 100.33 грн |
| MAL202114472E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7mF; 10VDC; Ø15x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 10V DC
Body dimensions: Ø15x30mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7mF; 10VDC; Ø15x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 10V DC
Body dimensions: Ø15x30mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -40...85°C
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 278.69 грн |
| 7+ | 115.31 грн |
| 20+ | 109.02 грн |
| GRC00FG4721ATNL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 12.5x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 12.5x25mm
на замовлення 460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 57.75 грн |
| 15+ | 23.73 грн |
| 50+ | 15.78 грн |
| 78+ | 10.24 грн |
| 214+ | 9.69 грн |
| SIHG80N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHG80N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 254A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 254A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| ES1D-E3/61T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
на замовлення 12397 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 5.81 грн |
| 100+ | 4.35 грн |
| 235+ | 3.47 грн |
| 645+ | 3.27 грн |
| ES1DHE3_A/I |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Case: DO214AC; SMA
Capacitance: 10pF
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Case: DO214AC; SMA
Capacitance: 10pF
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
товар відсутній
| RS1J-E3/5AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Leakage current: 50µA
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Leakage current: 50µA
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Type of diode: rectifying
товар відсутній
| RS1J-E3/61T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 7pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 7pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Type of diode: rectifying
на замовлення 6122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.53 грн |
| 70+ | 4.97 грн |
| 217+ | 3.75 грн |
| 596+ | 3.54 грн |
| MAL211890511E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 220uF; 40VDC; Ø10x25mm; ±20%; 4000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 220µF
Operating voltage: 40V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 4000h
Operating temperature: -40...125°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 220uF; 40VDC; Ø10x25mm; ±20%; 4000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 220µF
Operating voltage: 40V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 4000h
Operating temperature: -40...125°C
товар відсутній
| MAL211890513E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 4000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 4000h
Operating temperature: -40...125°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 4000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 4000h
Operating temperature: -40...125°C
на замовлення 109 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 248.14 грн |
| 8+ | 104.48 грн |
| 22+ | 98.95 грн |
| SI4816BDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.6/6.5A
On-state resistance: 18.5/11.5mΩ
Type of transistor: N-MOSFET x2 + Schottky
Power dissipation: 0.64/0.8W
Polarisation: unipolar
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.6/6.5A
On-state resistance: 18.5/11.5mΩ
Type of transistor: N-MOSFET x2 + Schottky
Power dissipation: 0.64/0.8W
Polarisation: unipolar
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| SI4816BDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.6/6.5A
On-state resistance: 18.5/11.5mΩ
Type of transistor: N-MOSFET x2 + Schottky
Power dissipation: 0.64/0.8W
Polarisation: unipolar
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.6/6.5A
On-state resistance: 18.5/11.5mΩ
Type of transistor: N-MOSFET x2 + Schottky
Power dissipation: 0.64/0.8W
Polarisation: unipolar
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| SI4835DDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 5.6W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 65nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±25V
Type of transistor: P-MOSFET
Power dissipation: 5.6W
On-state resistance: 30mΩ
Drain current: -7.7A
Drain-source voltage: -30V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.7A; 5.6W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 65nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±25V
Type of transistor: P-MOSFET
Power dissipation: 5.6W
On-state resistance: 30mΩ
Drain current: -7.7A
Drain-source voltage: -30V
на замовлення 4097 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.28 грн |
| 9+ | 42.07 грн |
| 25+ | 32.52 грн |
| 69+ | 30.45 грн |
| 500+ | 29.41 грн |
| SI4835DDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; Idm: -50A; 3.6W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 65nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: -50A
Type of transistor: P-MOSFET
Power dissipation: 3.6W
On-state resistance: 18mΩ
Drain current: -13A
Drain-source voltage: -30V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; Idm: -50A; 3.6W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 65nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: -50A
Type of transistor: P-MOSFET
Power dissipation: 3.6W
On-state resistance: 18mΩ
Drain current: -13A
Drain-source voltage: -30V
на замовлення 697 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.12 грн |
| 11+ | 33.49 грн |
| 25+ | 29.61 грн |
| 29+ | 28.51 грн |
| 78+ | 26.99 грн |
| 500+ | 25.95 грн |
| SI4840BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 19A; Idm: 50A; 3.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 19A
Pulsed drain current: 50A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 19A; Idm: 50A; 3.8W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 19A
Pulsed drain current: 50A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4850EY-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; 3.3W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 7.1A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; 3.3W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 7.1A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 3157 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.83 грн |
| 9+ | 41.1 грн |
| 24+ | 33.9 грн |
| 65+ | 31.83 грн |
| 500+ | 30.58 грн |
| SI4850EY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 40A; 1.2W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 27nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 1.2W
On-state resistance: 22mΩ
Drain current: 6A
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 40A; 1.2W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 27nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
Type of transistor: N-MOSFET
Power dissipation: 1.2W
On-state resistance: 22mΩ
Drain current: 6A
Drain-source voltage: 60V
товар відсутній
| SI4894BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4896DY-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; 3.1W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 41nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Power dissipation: 3.1W
On-state resistance: 22mΩ
Drain current: 7.6A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; 3.1W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Gate charge: 41nC
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Power dissipation: 3.1W
On-state resistance: 22mΩ
Drain current: 7.6A
Drain-source voltage: 80V
товар відсутній
| MBR1045-E3/45 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.57V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.57V
товар відсутній
| VS-MBR1045-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO247AC; tube; Ir: 15mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 600pF
Case: TO247AC
Kind of package: tube
Max. forward impulse current: 1.06kA
Max. forward voltage: 0.57V
Leakage current: 15mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO247AC; tube; Ir: 15mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 600pF
Case: TO247AC
Kind of package: tube
Max. forward impulse current: 1.06kA
Max. forward voltage: 0.57V
Leakage current: 15mA
товар відсутній
| Si9433BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1343 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.09 грн |
| 7+ | 51.9 грн |
| 19+ | 43.59 грн |
| 51+ | 40.82 грн |
| 500+ | 39.44 грн |
| SI9435BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2727 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 29.81 грн |
| 14+ | 26.09 грн |
| 38+ | 21.38 грн |
| 105+ | 20.2 грн |
| 2500+ | 19.86 грн |
| CRCW1206110KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 110kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 110kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 110kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 110kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.31 грн |
| CRCW1206510KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 510kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 510kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 510kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 510kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 16900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.19 грн |
| 500+ | 1.19 грн |
| 1000+ | 0.76 грн |
| 2300+ | 0.35 грн |
| 5000+ | 0.32 грн |
| CRCW1206510KJNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 510kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 510kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 510kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 510kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 697 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.99 грн |
| 500+ | 1.08 грн |
| TZMB5V1-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: MiniMELF
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: MiniMELF
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 9435 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 167+ | 2.24 грн |
| 186+ | 1.87 грн |
| 500+ | 1.65 грн |
| 560+ | 1.43 грн |
| 1539+ | 1.35 грн |
| BZM55B5V1-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZM55
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZM55
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 110+ | 3.39 грн |
| 125+ | 2.83 грн |
| 375+ | 2.16 грн |
| 1020+ | 2.04 грн |
| IRFPG30PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 125W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 125W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.85 грн |
| 5+ | 114.86 грн |
| 10+ | 83.72 грн |
| 27+ | 78.88 грн |
| IRFBG30PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO220AB
Case: TO220AB
Drain-source voltage: 1kV
Drain current: 2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO220AB
Case: TO220AB
Drain-source voltage: 1kV
Drain current: 2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
на замовлення 483 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.81 грн |
| 17+ | 48.44 грн |
| 46+ | 46.36 грн |
| 250+ | 45.67 грн |
| MBR1560CT-E3/45 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 150A
Max. forward voltage: 0.85V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 150A
Max. forward voltage: 0.85V
товар відсутній
| VR25000001004JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 1MΩ; 250mW; ±5%; Ø2.5x6.5mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 1.6kV
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø580µmx52mm
Temperature coefficient: 200ppm/°C
Category: THT Resistors
Description: Resistor: metal glaze; THT; 1MΩ; 250mW; ±5%; Ø2.5x6.5mm; 200ppm/°C
Type of resistor: metal glaze
Mounting: THT
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 1.6kV
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø580µmx52mm
Temperature coefficient: 200ppm/°C
на замовлення 810 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.79 грн |
| 100+ | 6.3 грн |
| 500+ | 4.84 грн |
| VR25000001005JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 10MΩ; 250mW; ±5%; Ø2.5x6.5mm; 200ppm/°C
Mounting: THT
Resistance: 10MΩ
Tolerance: ±5%
Type of resistor: metal glaze
Power: 0.25W
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø580µmx52mm
Temperature coefficient: 200ppm/°C
Max. operating voltage: 1.6kV
Category: THT Resistors
Description: Resistor: metal glaze; THT; 10MΩ; 250mW; ±5%; Ø2.5x6.5mm; 200ppm/°C
Mounting: THT
Resistance: 10MΩ
Tolerance: ±5%
Type of resistor: metal glaze
Power: 0.25W
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø580µmx52mm
Temperature coefficient: 200ppm/°C
Max. operating voltage: 1.6kV
на замовлення 570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.62 грн |
| 70+ | 5.67 грн |
| 100+ | 4.84 грн |
| 190+ | 4.25 грн |
| 530+ | 4.01 грн |
| VR25000004704JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal glaze; THT; 4.7MΩ; 250mW; ±5%; Ø2.5x6.5mm
Type of resistor: metal glaze
Mounting: THT
Resistance: 4.7MΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 1.6kV
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø580µmx52mm
Temperature coefficient: 200ppm/°C
Category: THT Resistors
Description: Resistor: metal glaze; THT; 4.7MΩ; 250mW; ±5%; Ø2.5x6.5mm
Type of resistor: metal glaze
Mounting: THT
Resistance: 4.7MΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 1.6kV
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø580µmx52mm
Temperature coefficient: 200ppm/°C
товар відсутній
| VJ1812A183FXAAT |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 18nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 18nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 18nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 18nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
товар відсутній
| VJ1812Y683JXCAT |
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 200V; X7R; ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 200V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 200V; X7R; ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 200V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
товар відсутній
| VJ1812Y683KXLTW1BC |
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 630V; X7R; ±10%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 630V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 630V; X7R; ±10%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 630V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
товар відсутній