| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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VJ0805A100JXACW1BC | VISHAY |
 Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 10pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 5199 шт: термін постачання 21-30 дні (днів) |
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TSOP39436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
на замовлення 2284 шт: термін постачання 21-30 дні (днів) |
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| TSOP53436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
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TSOP58336 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
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| TSOP58436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
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| TSOP94236 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
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| TSOP94336 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
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| TSOP94436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
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| TSOP94636 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
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| TSOP98236 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
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| TSOP98336 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷3.6V; 45° Supply voltage: 2.5...3.6V Mounting: THT Viewing angle: 45° Type of photoelement: integrated IR receiver Frequency: 36kHz |
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P6SMB10A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Features of semiconductor devices: glass passivated Case: SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
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P6SMB10A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Features of semiconductor devices: glass passivated Case: SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
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P6SMB10A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Features of semiconductor devices: glass passivated Case: SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
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P6SMB10A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Features of semiconductor devices: glass passivated Case: SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
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P6SMB10CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB10CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB10CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB10CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB110A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
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P6SMB110A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
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P6SMB110A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
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| SIHA21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.4A Pulsed drain current: 37A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
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| SIHB21N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHG21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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| SIHG21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.3A Pulsed drain current: 37A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
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| SIHP21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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| SIHP21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.3A Pulsed drain current: 37A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
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| SIHW21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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CRCW0805348KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film Resistance: 348kΩ Power: 0.125W Max. operating voltage: 150V Case - inch: 0805 Case - mm: 2012 Tolerance: ±1% |
на замовлення 4600 шт: термін постачання 21-30 дні (днів) |
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LVB1560-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A Max. off-state voltage: 0.6kV Load current: 15A Kind of package: tube Max. forward impulse current: 0.4kA Case: GSIB-5S Max. forward voltage: 0.9V Type of bridge rectifier: single-phase Leads: flat pin Electrical mounting: THT Version: flat |
на замовлення 196 шт: термін постачання 21-30 дні (днів) |
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| IRFPC50LCPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced |
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| IRFR020TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9020PBF | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9020TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9020TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR120TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFR120TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR120TRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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GRC00JG3312A00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 330uF; 100VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 100V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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| GSC00AM3312AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 100V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 16x21.5mm Height: 21.5mm |
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| GSC00AN3312AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 100V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 18x16.5mm Height: 16.5mm |
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MAL213639331E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 330uF; 100VDC; Ø16x31mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 100V DC Body dimensions: Ø16x31mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C |
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| ZSC00AM3312AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø16x21.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 330µF Operating voltage: 100V DC Body dimensions: Ø16x21.5mm Tolerance: ±20% Operating temperature: -55...105°C |
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| ZSC00AN3312AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø18x16.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 330µF Operating voltage: 100V DC Body dimensions: Ø18x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
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MB2S-E3/80 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.5A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 4855 шт: термін постачання 21-30 дні (днів) |
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MB4S-E3/80 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 1599 шт: термін постачання 21-30 дні (днів) |
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| VBT3080S-E3/8W | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 80V; 30A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 80V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.95V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 200A |
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| IRFR310TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.7A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A |
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| IRFR310TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.7A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A |
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MAL215099908E3 | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20% Type of capacitor: electrolytic Mounting: SMD Operating voltage: 100V DC Operating temperature: -55...105°C Body dimensions: 12.5x12.5x16mm Tolerance: ±20% Capacitance: 150µF |
на замовлення 505 шт: термін постачання 21-30 дні (днів) |
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| ZSC00CX1512AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 100VDC; Ø12.5x16mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 150µF Operating voltage: 100V DC Body dimensions: Ø12.5x16mm Tolerance: ±20% Operating temperature: -55...105°C |
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| SI2303CDS-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI2303CDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHLZ24L-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 68A Power dissipation: 60W Case: I2PAK; TO262 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
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VJ0805Y474KXJTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 470nF; 16V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.47µF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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VJ0805Y474KXXTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 470nF; 25V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.47µF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 11800 шт: термін постачання 21-30 дні (днів) |
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| PRV6SAABBXB25221MA | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 220Ω; 1.5W; ±20%; 3.17mm; linear Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 220Ω Power: 1.5W Tolerance: ±20% Shaft diameter: 3.17mm Characteristics: linear Leads: solder lugs Shaft length: 12.5mm Electrical rotation angle: 270° Operating temperature: -55...125°C Temperature coefficient: 150ppm/°C Track material: cermet Mechanical rotation angle: 300° IP rating: IP67 Mechanical durability: 50000 cycles |
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CRCW0805750RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 750Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 750Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 3200 шт: термін постачання 21-30 дні (днів) |
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VJ0805Y475KXJTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 4.7µF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товар відсутній |
| VJ0805A100JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 5199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.48 грн |
| 400+ | 0.95 грн |
| 1000+ | 0.6 грн |
| 1700+ | 0.48 грн |
| 4000+ | 0.47 грн |
| 4700+ | 0.45 грн |
| TSOP39436 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
на замовлення 2284 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.42 грн |
| 9+ | 42.28 грн |
| 21+ | 38.8 грн |
| 25+ | 37.14 грн |
| 58+ | 36.65 грн |
| 100+ | 35.81 грн |
| 500+ | 35.33 грн |
| TSOP53436 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
товар відсутній
| TSOP58336 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
товар відсутній
| TSOP58436 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
товар відсутній
| TSOP94236 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
товар відсутній
| TSOP94336 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
товар відсутній
| TSOP94436 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
товар відсутній
| TSOP94636 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
товар відсутній
| TSOP98236 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
товар відсутній
| TSOP98336 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷3.6V; 45°
Supply voltage: 2.5...3.6V
Mounting: THT
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷3.6V; 45°
Supply voltage: 2.5...3.6V
Mounting: THT
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
товар відсутній
| P6SMB10A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
товар відсутній
| P6SMB10A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
товар відсутній
| P6SMB10A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
товар відсутній
| P6SMB10A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
товар відсутній
| P6SMB10CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB10CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB10CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB10CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB110A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
| P6SMB110A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
| P6SMB110A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
| SIHA21N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 37A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 37A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHB21N80AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHG21N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHG21N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP21N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP21N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHW21N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| CRCW0805348KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 348kΩ
Power: 0.125W
Max. operating voltage: 150V
Case - inch: 0805
Case - mm: 2012
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 348kΩ
Power: 0.125W
Max. operating voltage: 150V
Case - inch: 0805
Case - mm: 2012
Tolerance: ±1%
на замовлення 4600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.88 грн |
| 500+ | 0.92 грн |
| 1000+ | 0.56 грн |
| LVB1560-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A
Max. off-state voltage: 0.6kV
Load current: 15A
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: GSIB-5S
Max. forward voltage: 0.9V
Type of bridge rectifier: single-phase
Leads: flat pin
Electrical mounting: THT
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A
Max. off-state voltage: 0.6kV
Load current: 15A
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: GSIB-5S
Max. forward voltage: 0.9V
Type of bridge rectifier: single-phase
Leads: flat pin
Electrical mounting: THT
Version: flat
на замовлення 196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 328.78 грн |
| 4+ | 210.72 грн |
| 11+ | 198.89 грн |
| IRFPC50LCPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFR020TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9020PBF | |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9020TRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9020TRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR120TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR120TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR120TRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| GRC00JG3312A00L |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 100VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 100VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.11 грн |
| 10+ | 35.75 грн |
| 47+ | 17.32 грн |
| 129+ | 16.41 грн |
| GSC00AM3312AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x21.5mm
Height: 21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x21.5mm
Height: 21.5mm
товар відсутній
| GSC00AN3312AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x16.5mm
Height: 16.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x16.5mm
Height: 16.5mm
товар відсутній
| MAL213639331E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 100VDC; Ø16x31mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 100VDC; Ø16x31mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
товар відсутній
| ZSC00AM3312AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø16x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø16x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø16x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø16x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| ZSC00AN3312AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø18x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø18x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø18x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø18x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| MB2S-E3/80 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 4855 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.28 грн |
| 16+ | 22.88 грн |
| 26+ | 13.7 грн |
| 90+ | 8.97 грн |
| 246+ | 8.48 грн |
| MB4S-E3/80 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 1599 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.66 грн |
| 17+ | 21.7 грн |
| 27+ | 13 грн |
| 95+ | 8.48 грн |
| 261+ | 8.07 грн |
| VBT3080S-E3/8W |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 30A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 30A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 200A
товар відсутній
| IRFR310TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
товар відсутній
| IRFR310TRPBF | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
товар відсутній
| MAL215099908E3 |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating voltage: 100V DC
Operating temperature: -55...105°C
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Capacitance: 150µF
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating voltage: 100V DC
Operating temperature: -55...105°C
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Capacitance: 150µF
на замовлення 505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.23 грн |
| 10+ | 82.06 грн |
| 27+ | 77.89 грн |
| ZSC00CX1512AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 100VDC; Ø12.5x16mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 150µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x16mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 100VDC; Ø12.5x16mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 150µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x16mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| SI2303CDS-T1-BE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI2303CDS-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHLZ24L-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: I2PAK; TO262
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: I2PAK; TO262
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| VJ0805Y474KXJTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 470nF; 16V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.47µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 470nF; 16V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.47µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.27 грн |
| 300+ | 1.47 грн |
| 1000+ | 0.81 грн |
| VJ0805Y474KXXTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 470nF; 25V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.47µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 470nF; 25V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.47µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 11800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.73 грн |
| 300+ | 1.74 грн |
| 1000+ | 0.83 грн |
| 2700+ | 0.78 грн |
| PRV6SAABBXB25221MA |
|
Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 220Ω; 1.5W; ±20%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 220Ω
Power: 1.5W
Tolerance: ±20%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 12.5mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 220Ω; 1.5W; ±20%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 220Ω
Power: 1.5W
Tolerance: ±20%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 12.5mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
товар відсутній
| CRCW0805750RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 750Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 750Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 750Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 750Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 3200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.78 грн |
| 500+ | 0.88 грн |
| 1000+ | 0.54 грн |
| VJ0805Y475KXJTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній