| Фото | Назва | Виробник | Інформація |
Доступність |
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P6SMB110A-E3/52 | VISHAY |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
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P6SMB110A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
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P6SMB110A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
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| SIHA21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.4A Pulsed drain current: 37A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
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| SIHB21N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHG21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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| SIHG21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.3A Pulsed drain current: 37A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
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| SIHP21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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| SIHP21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.3A Pulsed drain current: 37A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
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| SIHW21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
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CRCW0805348KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film Resistance: 348kΩ Power: 0.125W Max. operating voltage: 150V Case - inch: 0805 Case - mm: 2012 Tolerance: ±1% |
на замовлення 4600 шт: термін постачання 21-30 дні (днів) |
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LVB1560-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A Max. off-state voltage: 0.6kV Load current: 15A Kind of package: tube Max. forward impulse current: 0.4kA Case: GSIB-5S Max. forward voltage: 0.9V Type of bridge rectifier: single-phase Leads: flat pin Electrical mounting: THT Version: flat |
на замовлення 196 шт: термін постачання 21-30 дні (днів) |
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| IRFPC50LCPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced |
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| IRFR020TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9020PBF | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9020TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR9020TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR120TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFR120TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR120TRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
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GRC00JG3312A00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 330uF; 100VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 100V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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| GSC00AM3312AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 100V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 16x21.5mm Height: 21.5mm |
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| GSC00AN3312AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 100V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 18x16.5mm Height: 16.5mm |
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MAL213639331E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 330uF; 100VDC; Ø16x31mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 100V DC Body dimensions: Ø16x31mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C |
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| ZSC00AM3312AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø16x21.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 330µF Operating voltage: 100V DC Body dimensions: Ø16x21.5mm Tolerance: ±20% Operating temperature: -55...105°C |
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| ZSC00AN3312AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø18x16.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 330µF Operating voltage: 100V DC Body dimensions: Ø18x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
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MB2S-E3/80 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.5A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 4855 шт: термін постачання 21-30 дні (днів) |
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MB4S-E3/80 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 1599 шт: термін постачання 21-30 дні (днів) |
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| VBT3080S-E3/8W | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 80V; 30A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 80V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.95V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 200A |
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| IRFR310TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.7A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A |
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| IRFR310TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252 Drain-source voltage: 400V Drain current: 1.7A On-state resistance: 3.6Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 6A |
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MAL215099908E3 | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20% Type of capacitor: electrolytic Mounting: SMD Operating voltage: 100V DC Operating temperature: -55...105°C Body dimensions: 12.5x12.5x16mm Tolerance: ±20% Capacitance: 150µF |
на замовлення 505 шт: термін постачання 21-30 дні (днів) |
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| ZSC00CX1512AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 100VDC; Ø12.5x16mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 150µF Operating voltage: 100V DC Body dimensions: Ø12.5x16mm Tolerance: ±20% Operating temperature: -55...105°C |
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| SI2303CDS-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI2303CDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHLZ24L-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 68A Power dissipation: 60W Case: I2PAK; TO262 Gate-source voltage: ±10V On-state resistance: 0.14Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
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VJ0805Y474KXJTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 470nF; 16V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.47µF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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VJ0805Y474KXXTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 470nF; 25V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.47µF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 11800 шт: термін постачання 21-30 дні (днів) |
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| PRV6SAABBXB25221MA | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 220Ω; 1.5W; ±20%; 3.17mm; linear Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 220Ω Power: 1.5W Tolerance: ±20% Shaft diameter: 3.17mm Characteristics: linear Leads: solder lugs Shaft length: 12.5mm Electrical rotation angle: 270° Operating temperature: -55...125°C Temperature coefficient: 150ppm/°C Track material: cermet Mechanical rotation angle: 300° IP rating: IP67 Mechanical durability: 50000 cycles |
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CRCW0805750RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 750Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 750Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 3200 шт: термін постачання 21-30 дні (днів) |
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VJ0805Y475KXJTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 4.7µF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ1206Y475KXJTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 4.7µF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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| AC04000004709JAC00 | VISHAY |
Category: Other Resistors Description: Resistor: wire-wound; THT; 47Ω; 4W; ±5%; Ø5.5x16.5mm; -50÷250°C Type of resistor: wire-wound Mounting: THT Resistance: 47Ω Power: 4W Tolerance: ±5% Body dimensions: Ø5.5x16.5mm Leads dimensions: Ø0.8x25mm Operating temperature: -50...250°C Resistor features: non-flammable Temperature coefficient: 80ppm/°C Leads: axial |
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MBA02040C4709FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 47Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 47Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 2520 шт: термін постачання 21-30 дні (днів) |
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MBB02070C4709FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 47Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 47Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 3720 шт: термін постачання 21-30 дні (днів) |
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LL4151-GS08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.3A; 2ns; MiniMELF,SOD80; Ufmax: 1V Application: automotive industry Features of semiconductor devices: fast switching; small signal Mounting: SMD Case: MiniMELF; SOD80 Max. off-state voltage: 75V Max. forward voltage: 1V Load current: 0.3A Semiconductor structure: single diode Reverse recovery time: 2ns Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.5W Kind of package: reel; tape Type of diode: switching |
на замовлення 3500 шт: термін постачання 21-30 дні (днів) |
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| SI4151DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8 Kind of package: reel; tape Case: SO8 Drain-source voltage: -30V Drain current: -20.5A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 5.6W Polarisation: unipolar Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -150A Gate charge: 87nC Mounting: SMD |
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P6SMB220A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.8A Breakdown voltage: 220V Max. off-state voltage: 185V |
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P6SMB220A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.8A Breakdown voltage: 220V Max. off-state voltage: 185V |
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P6SMB220A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.8A Breakdown voltage: 220V Max. off-state voltage: 185V |
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P6SMB220A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. forward impulse current: 1.8A Breakdown voltage: 220V Max. off-state voltage: 185V |
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GSIB2580-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 525 шт: термін постачання 21-30 дні (днів) |
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| IRFBF20STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.7A Pulsed drain current: 6.8A Power dissipation: 54W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFBF20STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.7A Pulsed drain current: 6.8A Power dissipation: 54W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
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SI4477DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26.6A; Idm: -60A; 4.2W; SO8 Power dissipation: 4.2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: -20V Drain current: -26.6A On-state resistance: 6.2mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 0.19µC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -60A |
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| ZSC00AK3321AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 3.3mF; 10VDC; Ø16x16.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 3.3mF Operating voltage: 10V DC Body dimensions: Ø16x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
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MAL202114222E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 2.2mF; 10VDC; Ø12.5x30mm; ±20%; 8000h Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 10V DC Body dimensions: Ø12.5x30mm Tolerance: ±20% Leads: axial Service life: 8000h Operating temperature: -40...85°C |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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| SI9435BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
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V30100S-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220AB; tube Mounting: THT Max. off-state voltage: 100V Max. forward voltage: 0.91V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Case: TO220AB |
на замовлення 827 шт: термін постачання 21-30 дні (днів) |
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VF30100S-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220FP; tube Mounting: THT Max. off-state voltage: 100V Max. forward voltage: 0.91V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Case: TO220FP |
товар відсутній |
| P6SMB110A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
| P6SMB110A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
| P6SMB110A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
товар відсутній
| SIHA21N80AEF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 37A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 37A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHB21N80AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHG21N80AE-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHG21N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP21N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP21N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHW21N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| CRCW0805348KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 348kΩ
Power: 0.125W
Max. operating voltage: 150V
Case - inch: 0805
Case - mm: 2012
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 348kΩ
Power: 0.125W
Max. operating voltage: 150V
Case - inch: 0805
Case - mm: 2012
Tolerance: ±1%
на замовлення 4600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.88 грн |
| 500+ | 0.92 грн |
| 1000+ | 0.56 грн |
| LVB1560-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A
Max. off-state voltage: 0.6kV
Load current: 15A
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: GSIB-5S
Max. forward voltage: 0.9V
Type of bridge rectifier: single-phase
Leads: flat pin
Electrical mounting: THT
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A
Max. off-state voltage: 0.6kV
Load current: 15A
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: GSIB-5S
Max. forward voltage: 0.9V
Type of bridge rectifier: single-phase
Leads: flat pin
Electrical mounting: THT
Version: flat
на замовлення 196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 328.78 грн |
| 4+ | 210.72 грн |
| 5+ | 210.02 грн |
| 11+ | 198.89 грн |
| IRFPC50LCPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFR020TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9020PBF | |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9020TRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR9020TRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR120TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR120TRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR120TRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.7A
Pulsed drain current: 31A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| GRC00JG3312A00L |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 100VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 100VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 64.11 грн |
| 10+ | 35.75 грн |
| 47+ | 17.32 грн |
| 129+ | 16.41 грн |
| GSC00AM3312AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x21.5mm
Height: 21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x21.5mm
Height: 21.5mm
товар відсутній
| GSC00AN3312AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x16.5mm
Height: 16.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x16.5mm
Height: 16.5mm
товар відсутній
| MAL213639331E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 100VDC; Ø16x31mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 100VDC; Ø16x31mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø16x31mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
товар відсутній
| ZSC00AM3312AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø16x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø16x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø16x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø16x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| ZSC00AN3312AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø18x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø18x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 330uF; 100VDC; Ø18x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 100V DC
Body dimensions: Ø18x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| MB2S-E3/80 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 4855 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.28 грн |
| 16+ | 22.88 грн |
| 26+ | 13.7 грн |
| 90+ | 8.97 грн |
| 246+ | 8.48 грн |
| MB4S-E3/80 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.5A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 1599 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.66 грн |
| 17+ | 21.7 грн |
| 27+ | 13 грн |
| 95+ | 8.48 грн |
| 261+ | 8.07 грн |
| VBT3080S-E3/8W |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 30A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 30A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 200A
товар відсутній
| IRFR310TRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
товар відсутній
| IRFR310TRPBF | |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Drain-source voltage: 400V
Drain current: 1.7A
On-state resistance: 3.6Ω
Type of transistor: N-MOSFET
Power dissipation: 25W
Polarisation: unipolar
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 6A
товар відсутній
| MAL215099908E3 |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating voltage: 100V DC
Operating temperature: -55...105°C
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Capacitance: 150µF
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Operating voltage: 100V DC
Operating temperature: -55...105°C
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Capacitance: 150µF
на замовлення 505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.23 грн |
| 10+ | 82.06 грн |
| 27+ | 77.89 грн |
| ZSC00CX1512AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 100VDC; Ø12.5x16mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 150µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x16mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 100VDC; Ø12.5x16mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 150µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x16mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| SI2303CDS-T1-BE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI2303CDS-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHLZ24L-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: I2PAK; TO262
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 68A
Power dissipation: 60W
Case: I2PAK; TO262
Gate-source voltage: ±10V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| VJ0805Y474KXJTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 470nF; 16V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.47µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 470nF; 16V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.47µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.27 грн |
| 300+ | 1.47 грн |
| 1000+ | 0.81 грн |
| VJ0805Y474KXXTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 470nF; 25V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.47µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 470nF; 25V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.47µF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 11800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.73 грн |
| 300+ | 1.74 грн |
| 1000+ | 0.83 грн |
| 2700+ | 0.78 грн |
| PRV6SAABBXB25221MA |
|
Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 220Ω; 1.5W; ±20%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 220Ω
Power: 1.5W
Tolerance: ±20%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 12.5mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 220Ω; 1.5W; ±20%; 3.17mm; linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 220Ω
Power: 1.5W
Tolerance: ±20%
Shaft diameter: 3.17mm
Characteristics: linear
Leads: solder lugs
Shaft length: 12.5mm
Electrical rotation angle: 270°
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Track material: cermet
Mechanical rotation angle: 300°
IP rating: IP67
Mechanical durability: 50000 cycles
товар відсутній
| CRCW0805750RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 750Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 750Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 750Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 750Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 3200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.78 грн |
| 500+ | 0.88 грн |
| 1000+ | 0.54 грн |
| VJ0805Y475KXJTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ1206Y475KXJTW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 16V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| AC04000004709JAC00 |
|
Виробник: VISHAY
Category: Other Resistors
Description: Resistor: wire-wound; THT; 47Ω; 4W; ±5%; Ø5.5x16.5mm; -50÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 47Ω
Power: 4W
Tolerance: ±5%
Body dimensions: Ø5.5x16.5mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -50...250°C
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads: axial
Category: Other Resistors
Description: Resistor: wire-wound; THT; 47Ω; 4W; ±5%; Ø5.5x16.5mm; -50÷250°C
Type of resistor: wire-wound
Mounting: THT
Resistance: 47Ω
Power: 4W
Tolerance: ±5%
Body dimensions: Ø5.5x16.5mm
Leads dimensions: Ø0.8x25mm
Operating temperature: -50...250°C
Resistor features: non-flammable
Temperature coefficient: 80ppm/°C
Leads: axial
товар відсутній
| MBA02040C4709FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 47Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 47Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 47Ω; 0.4W; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 47Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 2520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.34 грн |
| 210+ | 1.72 грн |
| 620+ | 1.3 грн |
| 1710+ | 1.23 грн |
| MBB02070C4709FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 47Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 47Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 47Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 47Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 3720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.71 грн |
| 180+ | 2.04 грн |
| 1000+ | 1.84 грн |
| LL4151-GS08 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 2ns; MiniMELF,SOD80; Ufmax: 1V
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Mounting: SMD
Case: MiniMELF; SOD80
Max. off-state voltage: 75V
Max. forward voltage: 1V
Load current: 0.3A
Semiconductor structure: single diode
Reverse recovery time: 2ns
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 2ns; MiniMELF,SOD80; Ufmax: 1V
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Mounting: SMD
Case: MiniMELF; SOD80
Max. off-state voltage: 75V
Max. forward voltage: 1V
Load current: 0.3A
Semiconductor structure: single diode
Reverse recovery time: 2ns
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
на замовлення 3500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 165+ | 2.34 грн |
| 200+ | 1.75 грн |
| 500+ | 1.54 грн |
| 605+ | 1.34 грн |
| 1655+ | 1.26 грн |
| SI4151DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: -30V
Drain current: -20.5A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 5.6W
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Gate charge: 87nC
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8
Kind of package: reel; tape
Case: SO8
Drain-source voltage: -30V
Drain current: -20.5A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 5.6W
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -150A
Gate charge: 87nC
Mounting: SMD
товар відсутній
| P6SMB220A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.8A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.8A
Breakdown voltage: 220V
Max. off-state voltage: 185V
товар відсутній
| P6SMB220A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.8A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.8A
Breakdown voltage: 220V
Max. off-state voltage: 185V
товар відсутній
| P6SMB220A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.8A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.8A
Breakdown voltage: 220V
Max. off-state voltage: 185V
товар відсутній
| P6SMB220A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.8A
Breakdown voltage: 220V
Max. off-state voltage: 185V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 220V; 1.8A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. forward impulse current: 1.8A
Breakdown voltage: 220V
Max. off-state voltage: 185V
товар відсутній
| GSIB2580-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GSIB-5S
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 525 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 170.01 грн |
| 5+ | 143.26 грн |
| 8+ | 111.96 грн |
| 20+ | 105.71 грн |
| IRFBF20STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.7A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.7A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFBF20STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.7A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.7A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.7A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4477DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26.6A; Idm: -60A; 4.2W; SO8
Power dissipation: 4.2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: -20V
Drain current: -26.6A
On-state resistance: 6.2mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 0.19µC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -60A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26.6A; Idm: -60A; 4.2W; SO8
Power dissipation: 4.2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: -20V
Drain current: -26.6A
On-state resistance: 6.2mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 0.19µC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -60A
товар відсутній
| ZSC00AK3321AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 3.3mF; 10VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 10V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 3.3mF; 10VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 10V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| MAL202114222E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2.2mF; 10VDC; Ø12.5x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 10V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2.2mF; 10VDC; Ø12.5x30mm; ±20%; 8000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 10V DC
Body dimensions: Ø12.5x30mm
Tolerance: ±20%
Leads: axial
Service life: 8000h
Operating temperature: -40...85°C
на замовлення 238 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.67 грн |
| 9+ | 95.13 грн |
| 24+ | 89.94 грн |
| SI9435BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| V30100S-E3/4W |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.91V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220AB; tube
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.91V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO220AB
на замовлення 827 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.82 грн |
| 8+ | 114.05 грн |
| 20+ | 107.79 грн |
| VF30100S-E3/4W |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220FP; tube
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.91V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO220FP
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; TO220FP; tube
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.91V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Case: TO220FP
товар відсутній