| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VLMTG41S2U1-GS08 | VISHAY |
 Category: SMD colour LEDsDescription: LED; SMD; PLCC2; green; 224÷380(typ)-560mcd; 3x2.8x1.75mm; 60° Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: green Luminosity: 224...380(typ)-560mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 20mA Wavelength: 515...541nm Front: flat Operating voltage: 3.2...4.2V |
товар відсутній |
||||||||||||||||
| VLMTG41S2U1-GS18 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; PLCC2; green; 224÷380(typ)-560mcd; 3x2.8x1.75mm; 60° Type of diode: LED Mounting: SMD Case: PLCC2 LED colour: green Luminosity: 224...380(typ)-560mcd Dimensions: 3x2.8x1.75mm Viewing angle: 60° LED current: 20mA Wavelength: 515...541nm Front: flat Operating voltage: 3.2...4.2V |
товар відсутній |
||||||||||||||||
 |
TLHR5405 | VISHAY |
Category: THT LEDs Round Description: LED; 5mm; red; 6.3÷14mcd; 60°; Front: convex; 2÷3V; Pitch: 2.54mm Type of diode: LED LED diameter: 5mm LED colour: red Luminosity: 6.3...14mcd Viewing angle: 60° Wavelength: 612...625nm LED lens: diffused; red LED current: 10mA Mounting: THT Front: convex Terminal pitch: 2.54mm Number of terminals: 2 Operating voltage: 2...3V |
на замовлення 2877 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
SMBJ40CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 44.4V; 9.3A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 2460 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
SUM65N20-30-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 140A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||||
| SIR180ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 137A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 137A Pulsed drain current: 200A Power dissipation: 83.3W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SIR180DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A Technology: TrenchFET® Mounting: SMD Power dissipation: 83.3W Case: PowerPAK® SO8 Kind of package: reel; tape Pulsed drain current: 150A Gate charge: 87nC Polarisation: unipolar Drain current: 60A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.5mΩ |
товар відсутній |
||||||||||||||||
| SI7115DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -8.9A Pulsed drain current: -15A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.295Ω Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI5403DC-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -20A Power dissipation: 3.3W Case: ChipFET Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
 |
VBUS05L1-DD1-G-08 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 34W; 8.4V; 2A; bidirectional; LLP1006-2; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: LLP1006-2 Semiconductor structure: bidirectional Features of semiconductor devices: ESD protection Max. off-state voltage: 5.5V Max. forward impulse current: 2A Breakdown voltage: 8.4V Technology: TransZorb® Peak pulse power dissipation: 34W |
на замовлення 7000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
1.5KE8.2CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 8.2V; 124A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 7.02V Breakdown voltage: 8.2V Max. forward impulse current: 124A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 0.4mA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 1197 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
ZMY8V2-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; MELF; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: MELF Semiconductor structure: single diode |
на замовлення 4536 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
BZM55B8V2-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BZM55C8V2-TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; MicroMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: MicroMELF Semiconductor structure: single diode |
товар відсутній |
|||||||||||||||
| GSC00AC2201CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 22uF; 16VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 22µF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 5x5.7mm Height: 5.7mm |
товар відсутній |
||||||||||||||||
 |
GSC00AC3301CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 33uF; 16VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 33µF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 5x5.7mm Height: 5.7mm |
на замовлення 1380 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| GSC00AC3301CTFL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 33uF; 16VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 33µF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 5x5.7mm Height: 5.7mm |
товар відсутній |
||||||||||||||||
| ZSC00AB1001CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 10uF; 16VDC; Ø4x5.7mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 10µF Operating voltage: 16V DC Body dimensions: Ø4x5.7mm Tolerance: ±20% Operating temperature: -55...105°C |
товар відсутній |
||||||||||||||||
| ZSC00AC2201CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 22uF; 16VDC; Ø5x5.7mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 22µF Operating voltage: 16V DC Body dimensions: Ø5x5.7mm Tolerance: ±20% Operating temperature: -55...105°C |
товар відсутній |
||||||||||||||||
 |
S1M-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: DO214AC; SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 10085 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
S1M-M3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: DO214AC; SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
товар відсутній |
|||||||||||||||
|
|
SMBJ7.0A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 7.78V; 50A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.78V Max. forward impulse current: 50A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 1010 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
SMBJ7.0D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 7.9V; 50.8A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.9V Max. forward impulse current: 50.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.15mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товар відсутній |
|||||||||||||||
|
|
SMBJ7.5D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 8.46V; 47.2A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.46V Max. forward impulse current: 47.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 75µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товар відсутній |
|||||||||||||||
 |
VSSA210-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Capacitance: 175pF Max. forward voltage: 0.7V Case: SMA Kind of package: reel; tape Max. forward impulse current: 60A |
на замовлення 3981 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
M24S4FF3900T30 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 390Ω; 0.4W; ±1%; -55÷155°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 390Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
на замовлення 2725 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| GSC00BM2211CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 220µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Height: 7.7mm Nominal life: 2000h Dimensions: 6.3x7.7mm |
товар відсутній |
||||||||||||||||
| GSC00BM2211CTFL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 220µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Height: 7.7mm Nominal life: 2000h Dimensions: 6.3x7.7mm |
товар відсутній |
||||||||||||||||
| VS-SD2500C12K | VISHAY |
Category: Diodes - others Description: Diode: hockey-puck rectifying; 1.2kV; 3kA; DO200AC; Ifsm: 31kA Type of diode: hockey-puck rectifying Max. off-state voltage: 1.2kV Load current: 3kA Case: DO200AC Mounting: Press-Pack Max. forward impulse current: 31kA Max. forward voltage: 0.76V Kind of package: bulk |
товар відсутній |
||||||||||||||||
|
|
P6SMB350A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 300V Breakdown voltage: 350V Max. forward impulse current: 1.24A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||||
|
|
P6SMB350A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 300V Breakdown voltage: 350V Max. forward impulse current: 1.24A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
товар відсутній |
|||||||||||||||
| IL300-DEFG-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
| IL300-E | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; DIP8; IL300 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: DIP8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
| IL300-EF-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
| IL300-EF-X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL; VDE Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
| IL300-F-X009 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
| IL300-F-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
| IL300-F-X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL; VDE Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
| IL300-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
| IL300-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
товар відсутній |
||||||||||||||||
|
|
TZMB2V4-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
на замовлення 1850 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
TZMC2V4-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
на замовлення 27375 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
BY203-16STAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching Kind of package: Ammo Pack Max. forward impulse current: 20A Case: SOD57 Max. forward voltage: 2.4V Leakage current: 2µA Reverse recovery time: 300ns |
товар відсутній |
|||||||||||||||
 |
ZM4749A-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; reel,tape; MELF; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MELF Semiconductor structure: single diode |
на замовлення 4265 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
SML4749-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±10% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
на замовлення 1300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
SML4749A-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
товар відсутній |
|||||||||||||||
| Si3410DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 30A Power dissipation: 4.1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3424CDV-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3433CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -20A Power dissipation: 3.3W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 60mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3437DV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3437DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3438DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3438DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3440DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3442BDV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3442BDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3443BDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 1.1W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3443CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.97A Pulsed drain current: -20A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3453DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -6A Power dissipation: 3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
| SI3456DDV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Pulsed drain current: 20A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
| VLMTG41S2U1-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; green; 224÷380(typ)-560mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: green
Luminosity: 224...380(typ)-560mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 20mA
Wavelength: 515...541nm
Front: flat
Operating voltage: 3.2...4.2V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; green; 224÷380(typ)-560mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: green
Luminosity: 224...380(typ)-560mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 20mA
Wavelength: 515...541nm
Front: flat
Operating voltage: 3.2...4.2V
товар відсутній
| VLMTG41S2U1-GS18 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; green; 224÷380(typ)-560mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: green
Luminosity: 224...380(typ)-560mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 20mA
Wavelength: 515...541nm
Front: flat
Operating voltage: 3.2...4.2V
Category: SMD colour LEDs
Description: LED; SMD; PLCC2; green; 224÷380(typ)-560mcd; 3x2.8x1.75mm; 60°
Type of diode: LED
Mounting: SMD
Case: PLCC2
LED colour: green
Luminosity: 224...380(typ)-560mcd
Dimensions: 3x2.8x1.75mm
Viewing angle: 60°
LED current: 20mA
Wavelength: 515...541nm
Front: flat
Operating voltage: 3.2...4.2V
товар відсутній
| TLHR5405 |
|
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 5mm; red; 6.3÷14mcd; 60°; Front: convex; 2÷3V; Pitch: 2.54mm
Type of diode: LED
LED diameter: 5mm
LED colour: red
Luminosity: 6.3...14mcd
Viewing angle: 60°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 10mA
Mounting: THT
Front: convex
Terminal pitch: 2.54mm
Number of terminals: 2
Operating voltage: 2...3V
Category: THT LEDs Round
Description: LED; 5mm; red; 6.3÷14mcd; 60°; Front: convex; 2÷3V; Pitch: 2.54mm
Type of diode: LED
LED diameter: 5mm
LED colour: red
Luminosity: 6.3...14mcd
Viewing angle: 60°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 10mA
Mounting: THT
Front: convex
Terminal pitch: 2.54mm
Number of terminals: 2
Operating voltage: 2...3V
на замовлення 2877 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 17.3 грн |
| 44+ | 8.26 грн |
| 100+ | 7.09 грн |
| 148+ | 5.51 грн |
| 404+ | 5.21 грн |
| SMBJ40CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 44.4V; 9.3A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 44.4V; 9.3A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 2460 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.33 грн |
| 45+ | 8.21 грн |
| 100+ | 7.3 грн |
| 135+ | 6.03 грн |
| 370+ | 5.7 грн |
| SUM65N20-30-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR180ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 137A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 137A
Pulsed drain current: 200A
Power dissipation: 83.3W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 137A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 137A
Pulsed drain current: 200A
Power dissipation: 83.3W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR180DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Power dissipation: 83.3W
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 150A
Gate charge: 87nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Power dissipation: 83.3W
Case: PowerPAK® SO8
Kind of package: reel; tape
Pulsed drain current: 150A
Gate charge: 87nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
товар відсутній
| SI7115DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -15A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -8.9A
Pulsed drain current: -15A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.295Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI5403DC-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: ChipFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 3.3W; ChipFET
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: ChipFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VBUS05L1-DD1-G-08 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 34W; 8.4V; 2A; bidirectional; LLP1006-2; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: LLP1006-2
Semiconductor structure: bidirectional
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Max. forward impulse current: 2A
Breakdown voltage: 8.4V
Technology: TransZorb®
Peak pulse power dissipation: 34W
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 34W; 8.4V; 2A; bidirectional; LLP1006-2; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: LLP1006-2
Semiconductor structure: bidirectional
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Max. forward impulse current: 2A
Breakdown voltage: 8.4V
Technology: TransZorb®
Peak pulse power dissipation: 34W
на замовлення 7000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 17.45 грн |
| 36+ | 9.67 грн |
| 100+ | 8.55 грн |
| 101+ | 7.98 грн |
| 278+ | 7.55 грн |
| 2500+ | 7.23 грн |
| 1.5KE8.2CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 8.2V; 124A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 0.4mA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 8.2V; 124A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 124A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 0.4mA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 1197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.74 грн |
| 16+ | 22.32 грн |
| 50+ | 16.3 грн |
| 136+ | 15.41 грн |
| ZMY8V2-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
на замовлення 4536 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14 грн |
| 45+ | 7.86 грн |
| 100+ | 6.95 грн |
| 140+ | 5.74 грн |
| 385+ | 5.43 грн |
| BZM55B8V2-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.4 грн |
| 130+ | 2.68 грн |
| 385+ | 2.09 грн |
| 1060+ | 1.97 грн |
| BZM55C8V2-TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; SMD; reel,tape; MicroMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: MicroMELF
Semiconductor structure: single diode
товар відсутній
| GSC00AC2201CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 22uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 22µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 5x5.7mm
Height: 5.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 22uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 22µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 5x5.7mm
Height: 5.7mm
товар відсутній
| GSC00AC3301CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 5x5.7mm
Height: 5.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 5x5.7mm
Height: 5.7mm
на замовлення 1380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.8 грн |
| 100+ | 5.17 грн |
| 340+ | 2.45 грн |
| 910+ | 2.31 грн |
| GSC00AC3301CTFL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 5x5.7mm
Height: 5.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 33uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 33µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 5x5.7mm
Height: 5.7mm
товар відсутній
| ZSC00AB1001CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 10uF; 16VDC; Ø4x5.7mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 10µF
Operating voltage: 16V DC
Body dimensions: Ø4x5.7mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 10uF; 16VDC; Ø4x5.7mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 10µF
Operating voltage: 16V DC
Body dimensions: Ø4x5.7mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| ZSC00AC2201CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 22uF; 16VDC; Ø5x5.7mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 22µF
Operating voltage: 16V DC
Body dimensions: Ø5x5.7mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 22uF; 16VDC; Ø5x5.7mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 22µF
Operating voltage: 16V DC
Body dimensions: Ø5x5.7mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| S1M-E3/5AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 10085 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.72 грн |
| 52+ | 6.82 грн |
| 74+ | 4.76 грн |
| 123+ | 2.84 грн |
| 395+ | 2.03 грн |
| 1086+ | 1.93 грн |
| S1M-M3/5AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
товар відсутній
| SMBJ7.0A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.78V; 50A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.78V; 50A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 1010 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.98 грн |
| 55+ | 6.75 грн |
| 100+ | 5.98 грн |
| 160+ | 5.18 грн |
| 430+ | 4.9 грн |
| SMBJ7.0D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.9V; 50.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.9V
Max. forward impulse current: 50.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.9V; 50.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.9V
Max. forward impulse current: 50.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| SMBJ7.5D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 8.46V; 47.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.46V
Max. forward impulse current: 47.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 75µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 8.46V; 47.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.46V
Max. forward impulse current: 47.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 75µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| VSSA210-E3/61T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.7V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 60A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.7V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 60A
на замовлення 3981 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.66 грн |
| 15+ | 23.64 грн |
| 25+ | 21.28 грн |
| 51+ | 16.12 грн |
| 138+ | 15.24 грн |
| M24S4FF3900T30 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 390Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 390Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 390Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 390Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.37 грн |
| 125+ | 3.04 грн |
| 500+ | 1.24 грн |
| GSC00BM2211CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 7.7mm
Nominal life: 2000h
Dimensions: 6.3x7.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 7.7mm
Nominal life: 2000h
Dimensions: 6.3x7.7mm
товар відсутній
| GSC00BM2211CTFL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 7.7mm
Nominal life: 2000h
Dimensions: 6.3x7.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 7.7mm
Nominal life: 2000h
Dimensions: 6.3x7.7mm
товар відсутній
| VS-SD2500C12K |
|
Виробник: VISHAY
Category: Diodes - others
Description: Diode: hockey-puck rectifying; 1.2kV; 3kA; DO200AC; Ifsm: 31kA
Type of diode: hockey-puck rectifying
Max. off-state voltage: 1.2kV
Load current: 3kA
Case: DO200AC
Mounting: Press-Pack
Max. forward impulse current: 31kA
Max. forward voltage: 0.76V
Kind of package: bulk
Category: Diodes - others
Description: Diode: hockey-puck rectifying; 1.2kV; 3kA; DO200AC; Ifsm: 31kA
Type of diode: hockey-puck rectifying
Max. off-state voltage: 1.2kV
Load current: 3kA
Case: DO200AC
Mounting: Press-Pack
Max. forward impulse current: 31kA
Max. forward voltage: 0.76V
Kind of package: bulk
товар відсутній
| P6SMB350A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 1.24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 1.24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB350A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 1.24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 1.24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| IL300-DEFG-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-E |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; DIP8; IL300
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; DIP8; IL300
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-EF-X007 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-EF-X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-F-X009 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-F-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-F-X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-X007 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| TZMB2V4-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
на замовлення 1850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 3.28 грн |
| 177+ | 1.98 грн |
| 500+ | 1.75 грн |
| 557+ | 1.43 грн |
| 1530+ | 1.36 грн |
| TZMC2V4-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
на замовлення 27375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.61 грн |
| 275+ | 1.27 грн |
| 500+ | 1.13 грн |
| 800+ | 1.04 грн |
| 2175+ | 0.98 грн |
| 2500+ | 0.97 грн |
| 10000+ | 0.94 грн |
| BY203-16STAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 20A
Case: SOD57
Max. forward voltage: 2.4V
Leakage current: 2µA
Reverse recovery time: 300ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 20A
Case: SOD57
Max. forward voltage: 2.4V
Leakage current: 2µA
Reverse recovery time: 300ns
товар відсутній
| ZM4749A-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
на замовлення 4265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.93 грн |
| 40+ | 9.25 грн |
| 100+ | 8.21 грн |
| 115+ | 7.06 грн |
| 315+ | 6.68 грн |
| SML4749-E3/61 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.48 грн |
| 35+ | 11.34 грн |
| 90+ | 9.04 грн |
| 245+ | 8.55 грн |
| SML4749A-E3/61 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| Si3410DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3424CDV-T1-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3433CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3437DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3437DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3438DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3438DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3440DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3442BDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3442BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3443BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3443CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3453DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3456DDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній