| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TZMB9V1-GS08 | VISHAY |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
на замовлення 4580 шт: термін постачання 21-30 дні (днів) |
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TZMC9V1-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
на замовлення 7641 шт: термін постачання 21-30 дні (днів) |
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VLMT3100-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 3528,PLCC2; red; 2.8÷11.2mcd; 3.5x2.8x1.75mm; 60°; 2mA Type of diode: LED Mounting: SMD Case: 3528; PLCC2 LED colour: red Luminosity: 2.8...11.2mcd Dimensions: 3.5x2.8x1.75mm Viewing angle: 60° LED current: 2mA Wavelength: 612...625nm Front: flat Operating voltage: 2.2...2.9V |
на замовлення 1080 шт: термін постачання 21-30 дні (днів) |
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| SIHG25N40D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 16A; Idm: 78A; 278W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 16A Pulsed drain current: 78A Power dissipation: 278W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
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SIHP25N40D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 16A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 16A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
на замовлення 543 шт: термін постачання 21-30 дні (днів) |
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SA70CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; reel,tape Case: DO15 Mounting: THT Breakdown voltage: 77.8...86V Kind of package: reel; tape Technology: TransZorb® Max. forward impulse current: 4.4A Peak pulse power dissipation: 500W Features of semiconductor devices: glass passivated Max. off-state voltage: 70V Semiconductor structure: bidirectional Leakage current: 1µA Type of diode: TVS |
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SA70CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; Ammo Pack Case: DO15 Mounting: THT Breakdown voltage: 77.8...86V Kind of package: Ammo Pack Technology: TransZorb® Max. forward impulse current: 4.4A Peak pulse power dissipation: 500W Features of semiconductor devices: glass passivated Max. off-state voltage: 70V Semiconductor structure: bidirectional Leakage current: 1µA Type of diode: TVS |
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TSOP6133TR | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 33kHz; 2.5÷5.5V; 50° Type of photoelement: integrated IR receiver Frequency: 33kHz Mounting: SMD Viewing angle: 50° Supply voltage: 2.5...5.5V |
на замовлення 5437 шт: термін постачання 21-30 дні (днів) |
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SMCJ36CA-E3/57T | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 40V; 25.8A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
на замовлення 1796 шт: термін постачання 21-30 дні (днів) |
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SMCJ36CA-E3/9AT | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 42.1V; 25.8A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 42.1V Max. forward impulse current: 25.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
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VJ0805A820GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 2800 шт: термін постачання 21-30 дні (днів) |
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VJ0805A820JXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805A820JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 82pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 5700 шт: термін постачання 21-30 дні (днів) |
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VJ0805A820JXCCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 200V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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VJ0805L820GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 82pF; 50V; ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 82pF Operating voltage: 50V Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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SML4741A-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
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P6SMB11A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB11A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB11A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB11A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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BYX86TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; Ir: 25uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1V Leakage current: 25µA Reverse recovery time: 4µs |
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SMBJ22CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 19.9V; 16.9A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 19.9V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
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SMBJ22CD-M3/H | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 24.8V; 17.1A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.8V Max. forward impulse current: 17.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 702 шт: термін постачання 21-30 дні (днів) |
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| SIJ438DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 200A Power dissipation: 69.4W On-state resistance: 1.75mΩ Mounting: SMD Gate charge: 182nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR104DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR120DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 106A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR170DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.85mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced |
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| SiR668DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR670DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 200A Power dissipation: 56.8W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR516DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63.7A Pulsed drain current: 200A Power dissipation: 71.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR570DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 77.4A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR578DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 70.2A Pulsed drain current: 200A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIDR170DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 5.85mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhanced |
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| SIDR626DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIDR668DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 200A Power dissipation: 125W Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIJA52ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 131A Pulsed drain current: 200A Power dissipation: 48W On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR104ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR104LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR826LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 86A Pulsed drain current: 200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR846ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 200A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIR870BDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 81A Pulsed drain current: 200A Power dissipation: 100W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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CRCW0805909KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 909kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
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CRCW0805931KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 931kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
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| SIHU2N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: IPAK; TO251 Mounting: THT Kind of package: tube On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A |
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| SS10PH45-M3/86A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 400pF Max. forward voltage: 0.72V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 200A |
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| SS10PH45HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Capacitance: 400pF Max. forward voltage: 0.72V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 200A |
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BFC233860272 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC Mounting: THT Terminal pitch: 7.5mm Tolerance: ±20% Type of capacitor: polypropylene Capacitance: 2.7nF Operating voltage: 300V AC; 1kV DC Body dimensions: 10x4x9mm |
на замовлення 917 шт: термін постачання 21-30 дні (днів) |
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SI4459ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8 Type of transistor: P-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 61nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -23.5A On-state resistance: 5mΩ |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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SI4483ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -15.4A Power dissipation: 3.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 44.8nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2087 шт: термін постачання 21-30 дні (днів) |
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| SI7101DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Pulsed drain current: -80A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SI7617DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13.9A Pulsed drain current: -60A Power dissipation: 33W Case: PowerPAK® 1212-8 Gate-source voltage: ±25V On-state resistance: 12.3mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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VJ0402Y683KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 68nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
товар відсутній |
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| ILQ2-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 100-500%@10mA Case: SMD16 Conform to the norm: UL Turn-on time: 2µs Turn-off time: 13.5µs Max. off-state voltage: 6V Manufacturer series: ILQX |
товар відсутній |
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| ILQ2-X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX Type of optocoupler: optocoupler Mounting: THT Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 100-500%@10mA Case: DIP16 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 13.5µs Max. off-state voltage: 6V Manufacturer series: ILQX |
товар відсутній |
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| VO2611-X006 | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8 Max. off-state voltage: 5V Case: DIP8 Mounting: THT Turn-on time: 20ns Output voltage: 7V Number of channels: 1 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Conform to the norm: UL Manufacturer series: VO2611 Type of optocoupler: optocoupler Turn-off time: 25ns |
товар відсутній |
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| VO2631-X006 | VISHAY |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8 Max. off-state voltage: 5V Case: DIP8 Mounting: THT Turn-on time: 20ns Output voltage: 7V Number of channels: 2 Kind of output: gate Insulation voltage: 5.3kV Transfer rate: 10Mbps Conform to the norm: UL Manufacturer series: VO2631 Type of optocoupler: optocoupler Turn-off time: 25ns |
товар відсутній |
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| VO615A-3X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товар відсутній |
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| VO617A-4X006 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 160-320%@5mA Collector-emitter voltage: 80V Case: DIP4 Conform to the norm: UL Turn-on time: 6µs Turn-off time: 25µs Max. off-state voltage: 6V Manufacturer series: VO617A |
товар відсутній |
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GI2404-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns Case: TO220AB Mounting: THT Kind of package: tube Semiconductor structure: common cathode; double Max. off-state voltage: 200V Reverse recovery time: 35ns Max. forward impulse current: 125A Leakage current: 0.5mA Type of diode: rectifying Max. forward voltage: 0.895V Load current: 16A |
товар відсутній |
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CRCW2512422RFKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Operating temperature: -55...155°C Case - inch: 2512 Case - mm: 6332 Mounting: SMD Type of resistor: thick film Power: 1W Resistance: 422Ω Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
товар відсутній |
| TZMB9V1-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
на замовлення 4580 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 2.36 грн |
| 180+ | 1.98 грн |
| 500+ | 1.75 грн |
| 535+ | 1.5 грн |
| 1460+ | 1.43 грн |
| TZMC9V1-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
на замовлення 7641 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3 грн |
| 237+ | 1.47 грн |
| 500+ | 1.29 грн |
| 676+ | 1.19 грн |
| 1857+ | 1.13 грн |
| VLMT3100-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; red; 2.8÷11.2mcd; 3.5x2.8x1.75mm; 60°; 2mA
Type of diode: LED
Mounting: SMD
Case: 3528; PLCC2
LED colour: red
Luminosity: 2.8...11.2mcd
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 60°
LED current: 2mA
Wavelength: 612...625nm
Front: flat
Operating voltage: 2.2...2.9V
Category: SMD colour LEDs
Description: LED; SMD; 3528,PLCC2; red; 2.8÷11.2mcd; 3.5x2.8x1.75mm; 60°; 2mA
Type of diode: LED
Mounting: SMD
Case: 3528; PLCC2
LED colour: red
Luminosity: 2.8...11.2mcd
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 60°
LED current: 2mA
Wavelength: 612...625nm
Front: flat
Operating voltage: 2.2...2.9V
на замовлення 1080 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.23 грн |
| 35+ | 11.41 грн |
| 100+ | 8.35 грн |
| 150+ | 5.42 грн |
| 410+ | 5.15 грн |
| SIHG25N40D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; Idm: 78A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Pulsed drain current: 78A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; Idm: 78A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Pulsed drain current: 78A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP25N40D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 16A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 16A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 543 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.97 грн |
| 3+ | 164.82 грн |
| 7+ | 126.57 грн |
| 18+ | 119.61 грн |
| SA70CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; reel,tape
Case: DO15
Mounting: THT
Breakdown voltage: 77.8...86V
Kind of package: reel; tape
Technology: TransZorb®
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; reel,tape
Case: DO15
Mounting: THT
Breakdown voltage: 77.8...86V
Kind of package: reel; tape
Technology: TransZorb®
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
товар відсутній
| SA70CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; Ammo Pack
Case: DO15
Mounting: THT
Breakdown voltage: 77.8...86V
Kind of package: Ammo Pack
Technology: TransZorb®
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 77.8÷86V; 4.4A; bidirectional; DO15; 500W; Ammo Pack
Case: DO15
Mounting: THT
Breakdown voltage: 77.8...86V
Kind of package: Ammo Pack
Technology: TransZorb®
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Semiconductor structure: bidirectional
Leakage current: 1µA
Type of diode: TVS
товар відсутній
| TSOP6133TR |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 33kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 33kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 33kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 33kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
на замовлення 5437 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 56.92 грн |
| 8+ | 46.18 грн |
| 23+ | 36.21 грн |
| 62+ | 34.23 грн |
| 100+ | 33.03 грн |
| 500+ | 32.89 грн |
| SMCJ36CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 40V; 25.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 40V; 25.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
на замовлення 1796 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.49 грн |
| 25+ | 17.94 грн |
| 60+ | 13.64 грн |
| 163+ | 12.89 грн |
| SMCJ36CA-E3/9AT |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 42.1V; 25.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 42.1V; 25.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 25.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
товар відсутній
| VJ0805A820GXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.2 грн |
| 300+ | 1.47 грн |
| 1000+ | 0.82 грн |
| 2700+ | 0.78 грн |
| VJ0805A820JXAAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ0805A820JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 82pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 82pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 5700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.72 грн |
| 400+ | 1.13 грн |
| 1000+ | 0.72 грн |
| 1500+ | 0.56 грн |
| 4000+ | 0.52 грн |
| VJ0805A820JXCCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 200V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 200V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ0805L820GXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 82pF; 50V; ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 82pF
Operating voltage: 50V
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| SML4741A-E3/61 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
товар відсутній
| P6SMB11A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB11A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB11A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB11A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| BYX86TAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; Ir: 25uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1V
Leakage current: 25µA
Reverse recovery time: 4µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ammo Pack; Ifsm: 50A; SOD57; Ir: 25uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1V
Leakage current: 25µA
Reverse recovery time: 4µs
товар відсутній
| SMBJ22CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 16.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 19.9V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 19.9V; 16.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 19.9V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| SMBJ22CD-M3/H |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.8V; 17.1A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.8V
Max. forward impulse current: 17.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 24.8V; 17.1A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.8V
Max. forward impulse current: 17.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 702 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 13.33 грн |
| 59+ | 5.91 грн |
| 100+ | 5.22 грн |
| 167+ | 4.91 грн |
| 458+ | 4.64 грн |
| SIJ438DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 200A
Power dissipation: 69.4W
On-state resistance: 1.75mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 80A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 200A
Power dissipation: 69.4W
On-state resistance: 1.75mΩ
Mounting: SMD
Gate charge: 182nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR104DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 79A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR120DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 106A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 106A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR170DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SiR668DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR670DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 56.8W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR516DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63.7A
Pulsed drain current: 200A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 63.7A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63.7A
Pulsed drain current: 200A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR570DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 77.4A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 77.4A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR578DP-T1-RE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 70.2A
Pulsed drain current: 200A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIDR170DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 5.85mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIDR626DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 100A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIDR668DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 200A
Power dissipation: 125W
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIJA52ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 131A
Pulsed drain current: 200A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 131A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 131A
Pulsed drain current: 200A
Power dissipation: 48W
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR104ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR104LDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR826LDP-T1-RE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 86A; Idm: 200A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 86A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR846ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 200A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR870BDP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 81A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 81A
Pulsed drain current: 200A
Power dissipation: 100W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CRCW0805909KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 909kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 909kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 909kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній
| CRCW0805931KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 931kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 931kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 931kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній
| SIHU2N80E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: IPAK; TO251
Mounting: THT
Kind of package: tube
On-state resistance: 2.75Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 62.5W
Polarisation: unipolar
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: IPAK; TO251
Mounting: THT
Kind of package: tube
On-state resistance: 2.75Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 62.5W
Polarisation: unipolar
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 5A
товар відсутній
| SS10PH45-M3/86A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
товар відсутній
| SS10PH45HM3-A/H |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 400pF
Max. forward voltage: 0.72V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
товар відсутній
| BFC233860272 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 2.7nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 10x4x9mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.7nF; THT; ±20%; 7.5mm; 1kVDC; 300VAC
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 2.7nF
Operating voltage: 300V AC; 1kV DC
Body dimensions: 10x4x9mm
на замовлення 917 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.1 грн |
| 10+ | 63.28 грн |
| 17+ | 47.98 грн |
| 47+ | 45.2 грн |
| SI4459ADY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -23.5A
On-state resistance: 5mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -23.5A
On-state resistance: 5mΩ
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.11 грн |
| 5+ | 83.45 грн |
| 13+ | 63.28 грн |
| 35+ | 59.81 грн |
| SI4483ADY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2087 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.5 грн |
| 14+ | 57.72 грн |
| 39+ | 54.24 грн |
| SI7101DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -80A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7617DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13.9A
Pulsed drain current: -60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13.9A; Idm: -60A; 33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13.9A
Pulsed drain current: -60A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.42 грн |
| 10+ | 43.81 грн |
| 24+ | 33.94 грн |
| 66+ | 32.13 грн |
| VJ0402Y683KXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 68nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 68nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| ILQ2-X007 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: SMD16
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; SMD16; ILQX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: SMD16
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
товар відсутній
| ILQ2-X016 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: DIP16
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 4.42kV; DIP16; ILQX
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-500%@10mA
Case: DIP16
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 13.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQX
товар відсутній
| VO2611-X006 |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2611
Type of optocoupler: optocoupler
Turn-off time: 25ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 1
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2611
Type of optocoupler: optocoupler
Turn-off time: 25ns
товар відсутній
| VO2631-X006 |
|
Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2631
Type of optocoupler: optocoupler
Turn-off time: 25ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: gate; Uinsul: 5.3kV; 10Mbps; DIP8
Max. off-state voltage: 5V
Case: DIP8
Mounting: THT
Turn-on time: 20ns
Output voltage: 7V
Number of channels: 2
Kind of output: gate
Insulation voltage: 5.3kV
Transfer rate: 10Mbps
Conform to the norm: UL
Manufacturer series: VO2631
Type of optocoupler: optocoupler
Turn-off time: 25ns
товар відсутній
| VO615A-3X006 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товар відсутній
| VO617A-4X006 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: DIP4
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: VO617A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: DIP4
Conform to the norm: UL
Turn-on time: 6µs
Turn-off time: 25µs
Max. off-state voltage: 6V
Manufacturer series: VO617A
товар відсутній
| GI2404-E3/45 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward voltage: 0.895V
Load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Reverse recovery time: 35ns
Max. forward impulse current: 125A
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward voltage: 0.895V
Load current: 16A
товар відсутній
| CRCW2512422RFKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - inch: 2512
Case - mm: 6332
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 422Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 422Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - inch: 2512
Case - mm: 6332
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 422Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
товар відсутній