| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRF830ALPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced |
на замовлення 998 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| IRF830ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF830BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRFP048PBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Pulsed drain current: 290A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF840BPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.7A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF840LCLPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF840LCSPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF840STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 125W Polarisation: unipolar Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Drain-source voltage: 500V Drain current: 8A On-state resistance: 0.85Ω Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||
| IRF9530STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF9530STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRFB13N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| ZSC00AK1021VARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 1mF Operating voltage: 35V DC Body dimensions: Ø16x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
товар відсутній |
||||||||||||||
 |
SI4431BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 0.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1347 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
BFC233660222 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; Y2; 2.2nF; 4x10x12.5mm; THT; ±20%; 10mm Mounting: THT Kind of capacitor: Y2 Terminal pitch: 10mm Tolerance: ±20% Body dimensions: 4x10x12.5mm Leads dimensions: L 3.5mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 2.2nF Operating voltage: 300V AC; 1kV DC Climate class: 55/105/56 |
на замовлення 1246 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| BFC233663222 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 2.2nF; THT; ±20%; 10mm; 1kVDC; 300VAC Type of capacitor: polypropylene Capacitance: 2.2nF Operating voltage: 300V AC; 1kV DC Terminal pitch: 10mm Tolerance: ±20% Mounting: THT Body dimensions: 12.5x4x10mm |
товар відсутній |
||||||||||||||
| SISS5808DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A On-state resistance: 11mΩ Mounting: SMD Power dissipation: 65.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 66.6A Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||
| SISS588DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Power dissipation: 36.3W Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 46.5A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28.5nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
||||||||||||||
 |
CRCW0402220RFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 220Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 220Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 38700 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
IHLP4040DZER330M8A | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 33uH; 3.7A; 110mΩ; ±20%; 10.3x10.3x4mm; IHLP Mounting: SMD Operating current: 3.7A Manufacturer series: IHLP Inductance: 33µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Resistance: 0.11Ω Tolerance: ±20% Body dimensions: 10.3x10.3x4mm |
товар відсутній |
|||||||||||||
| IHLP6767DZER330M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 33uH; 6A; 64.4mΩ; ±20%; 17.15x17.15x4mm; IHLP Mounting: SMD Operating temperature: -55...125°C Manufacturer series: IHLP Resistance: 64.4mΩ Tolerance: ±20% Body dimensions: 17.15x17.15x4mm Operating current: 6A Inductance: 33µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
товар відсутній |
||||||||||||||
| IHLP6767GZER330M11 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 33uH; 10.7A; 35.1mΩ; ±20%; 17.15x17.15x7mm Mounting: SMD Operating temperature: -55...125°C Manufacturer series: IHLP Resistance: 35.1mΩ Tolerance: ±20% Body dimensions: 17.15x17.15x7mm Operating current: 10.7A Inductance: 33µH Type of inductor: wire Inductor features: high current; low DCR/uH value; shielded; very low buzz noise |
товар відсутній |
||||||||||||||
| BZW04-188B-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 209÷231V; 1.4A; bidirectional; DO41; 400W; reel,tape Type of diode: TVS Max. off-state voltage: 188V Breakdown voltage: 209...231V Max. forward impulse current: 1.4A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.4kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
товар відсутній |
||||||||||||||
 |
PR03000202203JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 220kΩ Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
товар відсутній |
|||||||||||||
 |
BZX55C22-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 22V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товар відсутній |
|||||||||||||
 |
BZX85C22-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 22V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 3440 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
VJ0603G475KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 4.7uF; 16V; X5R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 4.7µF Operating voltage: 16V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...85°C |
товар відсутній |
|||||||||||||
|
|
VJ0603G475KXYCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 4.7uF; 6.3V; X5R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 4.7µF Operating voltage: 6.3V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...85°C |
товар відсутній |
|||||||||||||
|
|
VJ0603G475MXQCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 4.7uF; 10V; X5R; ±20%; SMD; 0603 Type of capacitor: ceramic Capacitance: 4.7µF Operating voltage: 10V Dielectric: X5R Tolerance: ±20% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...85°C |
товар відсутній |
|||||||||||||
|
|
CRCW0402100KFKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 100kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 19200 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW0402100KFKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 100kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 227300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW0402100KJNTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 100kΩ Power: 62.5mW Tolerance: ±5% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
на замовлення 24898 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
TLCR5800 | VISHAY |
Category: THT LEDs Round Description: LED; 5mm; red; 7.5÷35cd; 8°; Front: convex; 2.1÷2.7V; Pitch: 2.54mm Type of diode: LED LED diameter: 5mm LED colour: red Luminosity: 7.5...35cd Viewing angle: 8° Wavelength: 611...622nm LED lens: transparent LED current: 50mA Mounting: THT Front: convex Terminal pitch: 2.54mm Number of terminals: 2 Operating voltage: 2.1...2.7V |
товар відсутній |
|||||||||||||
| IRF640PBF-BE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRF640STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 130W Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET |
товар відсутній |
||||||||||||||
|
|
VJ0603Y471KXXCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 470pF; 25V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.47nF Operating voltage: 25V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 3900 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| BFC233845104 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 100nF; THT; ±10%; 15mm; 630VDC; 300VAC Tolerance: ±10% Type of capacitor: polypropylene Capacitance: 0.1µF Operating voltage: 300V AC; 630V DC Body dimensions: 17.5x6x12mm Mounting: THT Terminal pitch: 15mm |
товар відсутній |
||||||||||||||
 |
CRCW06032R20FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 2.2Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 10300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
CRCW06032R20FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 2.2Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
товар відсутній |
|||||||||||||
|
|
CRCW06032R20JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 2.2Ω Power: 0.1W Tolerance: ±5% Max. operating voltage: 75V Operating temperature: -55...155°C |
товар відсутній |
|||||||||||||
| SI5517DU-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W Drain-source voltage: 20/-20V Drain current: 6/-6A On-state resistance: 131/55mΩ Type of transistor: N/P-MOSFET Power dissipation: 8.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14/16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD |
товар відсутній |
||||||||||||||
| IRL630SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRL630STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| IRL630STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| ZSC00AK4711JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 63VDC; Ø16x16.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 470µF Operating voltage: 63V DC Body dimensions: Ø16x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
товар відсутній |
||||||||||||||
| GSC00AP4712AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 470µF Operating voltage: 100V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 18x21.5mm Height: 21.5mm |
товар відсутній |
||||||||||||||
| ZSC00AP4712AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 470µF Operating voltage: 100V DC Body dimensions: Ø18x21.5mm Tolerance: ±20% Operating temperature: -55...105°C |
товар відсутній |
||||||||||||||
 |
1.5KE9.1A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 9.1V; 112A; unidirectional; DO201; reel,tape Type of diode: TVS Kind of package: reel; tape Case: DO201 Mounting: THT Semiconductor structure: unidirectional Leakage current: 50µA Peak pulse power dissipation: 1.5kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 7.78V Breakdown voltage: 9.1V Manufacturer series: 1.5KE Max. forward impulse current: 112A |
товар відсутній |
|||||||||||||
 |
PR02000201000JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 100Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 100Ω Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 690 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| ZSC00AG6811CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 16V DC Body dimensions: Ø10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
товар відсутній |
||||||||||||||
 |
MBB02070C2200FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 220Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 220Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 5890 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| IFSC1008ABER100M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; 2.5x2x1.2mm; IFSC Mounting: SMD Resistance: 359mΩ Tolerance: ±20% Body dimensions: 2.5x2x1.2mm Operating temperature: -55...125°C Manufacturer series: IFSC Type of inductor: wire Operating current: 0.9A Inductance: 10µH |
товар відсутній |
||||||||||||||
| IFSC1008ABER1R0M01 | VISHAY |
Category: SMD power inductors Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; 2.5x2x1.2mm; -55÷125°C Mounting: SMD Resistance: 37mΩ Tolerance: ±20% Body dimensions: 2.5x2x1.2mm Operating temperature: -55...125°C Manufacturer series: IFSC Type of inductor: wire Operating current: 2.65A Inductance: 1µH |
товар відсутній |
||||||||||||||
| SI5936DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 25A Power dissipation: 10.4W Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| GSC00AP4702GARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 47µF Operating voltage: 400V DC Tolerance: ±20% Operating temperature: -40...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 18x21.5mm Height: 21.5mm |
товар відсутній |
||||||||||||||
 |
VS-2KBB20 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.9A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.9A Max. forward impulse current: 50A Version: flat Case: 2KBB Electrical mounting: THT Leads: wire Ø 0.9mm Kind of package: bulk Max. forward voltage: 1.1V |
на замовлення 493 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
GBU8A-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товар відсутній |
|||||||||||||
 |
GBU8A-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 247 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
GBU8B-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товар відсутній |
| IRF830ALPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.54 грн |
| 10+ | 65.91 грн |
| 16+ | 53.29 грн |
| 43+ | 50.49 грн |
| IRF830ASPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF830ASTRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF830BPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFP048PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 290A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF840ASTRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF840BPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF840LCLPBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF840LCSPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF840STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 0.85Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 500V
Drain current: 8A
On-state resistance: 0.85Ω
Type of transistor: N-MOSFET
товар відсутній
| IRF9530STRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF9530STRRPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFB13N50APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| ZSC00AK1021VARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 1mF
Operating voltage: 35V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 1mF
Operating voltage: 35V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| SI4431BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1347 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 68.72 грн |
| 8+ | 46.56 грн |
| 22+ | 37.23 грн |
| 60+ | 35.2 грн |
| 500+ | 34.64 грн |
| BFC233660222 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 2.2nF; 4x10x12.5mm; THT; ±20%; 10mm
Mounting: THT
Kind of capacitor: Y2
Terminal pitch: 10mm
Tolerance: ±20%
Body dimensions: 4x10x12.5mm
Leads dimensions: L 3.5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 300V AC; 1kV DC
Climate class: 55/105/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 2.2nF; 4x10x12.5mm; THT; ±20%; 10mm
Mounting: THT
Kind of capacitor: Y2
Terminal pitch: 10mm
Tolerance: ±20%
Body dimensions: 4x10x12.5mm
Leads dimensions: L 3.5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 300V AC; 1kV DC
Climate class: 55/105/56
на замовлення 1246 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 40.02 грн |
| 15+ | 23.84 грн |
| 60+ | 13.88 грн |
| 164+ | 13.11 грн |
| BFC233663222 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 2.2nF
Operating voltage: 300V AC; 1kV DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x4x10mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; THT; ±20%; 10mm; 1kVDC; 300VAC
Type of capacitor: polypropylene
Capacitance: 2.2nF
Operating voltage: 300V AC; 1kV DC
Terminal pitch: 10mm
Tolerance: ±20%
Mounting: THT
Body dimensions: 12.5x4x10mm
товар відсутній
| SISS5808DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
On-state resistance: 11mΩ
Mounting: SMD
Power dissipation: 65.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 66.6A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
On-state resistance: 11mΩ
Mounting: SMD
Power dissipation: 65.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 66.6A
Type of transistor: N-MOSFET
товар відсутній
| SISS588DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36.3W
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 46.5A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 46.5A; Idm: 150A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 36.3W
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 46.5A
On-state resistance: 9.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| CRCW0402220RFKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 220Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 220Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 220Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 220Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 38700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 1.23 грн |
| 1000+ | 0.38 грн |
| 10000+ | 0.12 грн |
| IHLP4040DZER330M8A |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 3.7A; 110mΩ; ±20%; 10.3x10.3x4mm; IHLP
Mounting: SMD
Operating current: 3.7A
Manufacturer series: IHLP
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 0.11Ω
Tolerance: ±20%
Body dimensions: 10.3x10.3x4mm
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 3.7A; 110mΩ; ±20%; 10.3x10.3x4mm; IHLP
Mounting: SMD
Operating current: 3.7A
Manufacturer series: IHLP
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Resistance: 0.11Ω
Tolerance: ±20%
Body dimensions: 10.3x10.3x4mm
товар відсутній
| IHLP6767DZER330M11 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 6A; 64.4mΩ; ±20%; 17.15x17.15x4mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 64.4mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x4mm
Operating current: 6A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 6A; 64.4mΩ; ±20%; 17.15x17.15x4mm; IHLP
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 64.4mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x4mm
Operating current: 6A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
товар відсутній
| IHLP6767GZER330M11 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 10.7A; 35.1mΩ; ±20%; 17.15x17.15x7mm
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 35.1mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 10.7A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Category: SMD power inductors
Description: Inductor: wire; SMD; 33uH; 10.7A; 35.1mΩ; ±20%; 17.15x17.15x7mm
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: IHLP
Resistance: 35.1mΩ
Tolerance: ±20%
Body dimensions: 17.15x17.15x7mm
Operating current: 10.7A
Inductance: 33µH
Type of inductor: wire
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
товар відсутній
| BZW04-188B-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 209÷231V; 1.4A; bidirectional; DO41; 400W; reel,tape
Type of diode: TVS
Max. off-state voltage: 188V
Breakdown voltage: 209...231V
Max. forward impulse current: 1.4A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.4kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 209÷231V; 1.4A; bidirectional; DO41; 400W; reel,tape
Type of diode: TVS
Max. off-state voltage: 188V
Breakdown voltage: 209...231V
Max. forward impulse current: 1.4A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.4kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| PR03000202203JAC00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 220kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 220kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
товар відсутній
| BZX55C22-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| BZX85C22-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 3440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.12 грн |
| 130+ | 2.79 грн |
| 250+ | 2.49 грн |
| 370+ | 2.24 грн |
| 1000+ | 2.2 грн |
| 1010+ | 2.12 грн |
| VJ0603G475KXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 16V; X5R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 16V; X5R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...85°C
товар відсутній
| VJ0603G475KXYCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 6.3V; X5R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 6.3V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 6.3V; X5R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 6.3V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...85°C
товар відсутній
| VJ0603G475MXQCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 10V; X5R; ±20%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±20%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 10V; X5R; ±20%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±20%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...85°C
товар відсутній
| CRCW0402100KFKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 19200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.5 грн |
| 1000+ | 0.37 грн |
| 3100+ | 0.27 грн |
| 8500+ | 0.25 грн |
| CRCW0402100KFKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 227300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 700+ | 0.54 грн |
| 2100+ | 0.17 грн |
| 10000+ | 0.05 грн |
| 48700+ | 0.04 грн |
| CRCW0402100KJNTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
на замовлення 24898 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 600+ | 0.71 грн |
| 1300+ | 0.29 грн |
| 6000+ | 0.14 грн |
| 16500+ | 0.13 грн |
| TLCR5800 |
|
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; 5mm; red; 7.5÷35cd; 8°; Front: convex; 2.1÷2.7V; Pitch: 2.54mm
Type of diode: LED
LED diameter: 5mm
LED colour: red
Luminosity: 7.5...35cd
Viewing angle: 8°
Wavelength: 611...622nm
LED lens: transparent
LED current: 50mA
Mounting: THT
Front: convex
Terminal pitch: 2.54mm
Number of terminals: 2
Operating voltage: 2.1...2.7V
Category: THT LEDs Round
Description: LED; 5mm; red; 7.5÷35cd; 8°; Front: convex; 2.1÷2.7V; Pitch: 2.54mm
Type of diode: LED
LED diameter: 5mm
LED colour: red
Luminosity: 7.5...35cd
Viewing angle: 8°
Wavelength: 611...622nm
LED lens: transparent
LED current: 50mA
Mounting: THT
Front: convex
Terminal pitch: 2.54mm
Number of terminals: 2
Operating voltage: 2.1...2.7V
товар відсутній
| IRF640PBF-BE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF640STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
товар відсутній
| VJ0603Y471KXXCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 470pF; 25V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.47nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 470pF; 25V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.47nF
Operating voltage: 25V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 1.19 грн |
| 1000+ | 0.5 грн |
| 2700+ | 0.31 грн |
| BFC233845104 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; THT; ±10%; 15mm; 630VDC; 300VAC
Tolerance: ±10%
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 300V AC; 630V DC
Body dimensions: 17.5x6x12mm
Mounting: THT
Terminal pitch: 15mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; THT; ±10%; 15mm; 630VDC; 300VAC
Tolerance: ±10%
Type of capacitor: polypropylene
Capacitance: 0.1µF
Operating voltage: 300V AC; 630V DC
Body dimensions: 17.5x6x12mm
Mounting: THT
Terminal pitch: 15mm
товар відсутній
| CRCW06032R20FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 10300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 1.06 грн |
| 600+ | 0.59 грн |
| 1000+ | 0.48 грн |
| 5000+ | 0.42 грн |
| CRCW06032R20FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
товар відсутній
| CRCW06032R20JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±5%
Max. operating voltage: 75V
Operating temperature: -55...155°C
товар відсутній
| SI5517DU-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W
Drain-source voltage: 20/-20V
Drain current: 6/-6A
On-state resistance: 131/55mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 8.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14/16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3W
Drain-source voltage: 20/-20V
Drain current: 6/-6A
On-state resistance: 131/55mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 8.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14/16nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
товар відсутній
| IRL630SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRL630STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRL630STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| ZSC00AK4711JARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 63VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 63V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 63VDC; Ø16x16.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 63V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| GSC00AP4712AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
товар відсутній
| ZSC00AP4712AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| 1.5KE9.1A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 9.1V; 112A; unidirectional; DO201; reel,tape
Type of diode: TVS
Kind of package: reel; tape
Case: DO201
Mounting: THT
Semiconductor structure: unidirectional
Leakage current: 50µA
Peak pulse power dissipation: 1.5kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 7.78V
Breakdown voltage: 9.1V
Manufacturer series: 1.5KE
Max. forward impulse current: 112A
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 9.1V; 112A; unidirectional; DO201; reel,tape
Type of diode: TVS
Kind of package: reel; tape
Case: DO201
Mounting: THT
Semiconductor structure: unidirectional
Leakage current: 50µA
Peak pulse power dissipation: 1.5kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 7.78V
Breakdown voltage: 9.1V
Manufacturer series: 1.5KE
Max. forward impulse current: 112A
товар відсутній
| PR02000201000JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 100Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 100Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 100Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 100Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 690 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 7.82 грн |
| 100+ | 5.32 грн |
| 300+ | 4.12 грн |
| ZSC00AG6811CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| MBB02070C2200FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 220Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 220Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 220Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 220Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 5890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.44 грн |
| 180+ | 1.95 грн |
| 580+ | 1.42 грн |
| 1580+ | 1.34 грн |
| IFSC1008ABER100M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; 2.5x2x1.2mm; IFSC
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Manufacturer series: IFSC
Type of inductor: wire
Operating current: 0.9A
Inductance: 10µH
Category: SMD power inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; 2.5x2x1.2mm; IFSC
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Manufacturer series: IFSC
Type of inductor: wire
Operating current: 0.9A
Inductance: 10µH
товар відсутній
| IFSC1008ABER1R0M01 |
|
Виробник: VISHAY
Category: SMD power inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; 2.5x2x1.2mm; -55÷125°C
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Manufacturer series: IFSC
Type of inductor: wire
Operating current: 2.65A
Inductance: 1µH
Category: SMD power inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; 2.5x2x1.2mm; -55÷125°C
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Manufacturer series: IFSC
Type of inductor: wire
Operating current: 2.65A
Inductance: 1µH
товар відсутній
| SI5936DU-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 10.4W
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 25A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 10.4W
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| GSC00AP4702GARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
товар відсутній
| VS-2KBB20 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.9A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.9A
Max. forward impulse current: 50A
Version: flat
Case: 2KBB
Electrical mounting: THT
Leads: wire Ø 0.9mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.9A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.9A
Max. forward impulse current: 50A
Version: flat
Case: 2KBB
Electrical mounting: THT
Leads: wire Ø 0.9mm
Kind of package: bulk
Max. forward voltage: 1.1V
на замовлення 493 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.43 грн |
| 14+ | 58.9 грн |
| 38+ | 55.4 грн |
| GBU8A-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GBU8A-E3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 247 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.36 грн |
| 5+ | 166.19 грн |
| 7+ | 127.2 грн |
| 18+ | 120.26 грн |
| GBU8B-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній