| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI4401BDY-T1-GE3 | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -50A; 0.95W; SO8 Drain-source voltage: -40V Drain current: -8.7A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 0.95W Polarisation: unipolar Kind of package: reel; tape Case: SO8 Mounting: SMD Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -50A |
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SI4401FDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -11A Pulsed drain current: -80A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 18.3mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1072 шт: термін постачання 21-30 дні (днів) |
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CRCW06038K66FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 8.66kΩ; 0.1W; ±1%; -55÷155°C Operating temperature: -55...155°C Mounting: SMD Tolerance: ±1% Case - mm: 1608 Case - inch: 0603 Type of resistor: thick film Power: 0.1W Resistance: 8.66kΩ Max. operating voltage: 75V |
на замовлення 4600 шт: термін постачання 21-30 дні (днів) |
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| MKT182252225518 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polyester; 2.2uF; 250VDC; ±10%; THT; 31.5x11.5x20.5mm Type of capacitor: polyester Mounting: THT Capacitance: 2.2µF Operating voltage: 250V DC Tolerance: ±10% Dimensions: 31.5x11.5x20.5mm |
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| IRL530PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhanced |
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| IRL530STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRF9540STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -19A; Idm: -72A; 150W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 150W Polarisation: unipolar Gate charge: 61nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -72A Drain-source voltage: -100V Drain current: -19A On-state resistance: 0.2Ω Type of transistor: P-MOSFET |
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1.5KE130CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 111V Breakdown voltage: 130.5V Max. forward impulse current: 8.4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 1071 шт: термін постачання 21-30 дні (днів) |
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1.5KE13A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 13.05V; 82.4A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 11.1V Breakdown voltage: 13.05V Max. forward impulse current: 82.4A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
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1.5KE13CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 13.05V; 82.4A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 11.1V Breakdown voltage: 13.05V Max. forward impulse current: 82.4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
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DG407DJ-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: multiplexer; 8: 1; Ch: 2; DIP28; 5÷20V; tube Type of integrated circuit: multiplexer Output configuration: 8:1 Number of channels: 2 Case: DIP28 Supply voltage: 5...20V Mounting: THT Kind of package: tube Resistance: 100Ω |
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DG454EY-T1-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch; SPST-NC; Ch: 4; SO16; -15÷15V; reel,tape Supply voltage: -15...15V Type of integrated circuit: analog switch Resistance: 5.3Ω Kind of package: reel; tape Output configuration: SPST-NC Case: SO16 Number of channels: 4 Mounting: SMD |
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593D107X0010D2TE3 | VISHAY |
 Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±20%; 100mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±20% Case: D Capacitance: 100µF Operating voltage: 10V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 100mΩ |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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593D107X0016D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±20%; 125mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±20% Case: D Capacitance: 100µF Operating voltage: 16V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 125mΩ |
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593D107X0020E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 20VDC; SMD; E; 2917; ±20%; 150mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±20% Case: E Capacitance: 100µF Operating voltage: 20V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 0.15Ω |
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593D107X9010D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±10% Case: D Capacitance: 100µF Operating voltage: 10V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 100mΩ |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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593D107X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±10% Case: D Capacitance: 100µF Operating voltage: 16V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 125mΩ |
на замовлення 747 шт: термін постачання 21-30 дні (днів) |
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593D107X9016E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±10% Case: E Capacitance: 100µF Operating voltage: 16V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 100mΩ |
на замовлення 375 шт: термін постачання 21-30 дні (днів) |
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593D107X9020E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 100uF; 20VDC; SMD; E; 2917; ±10%; 150mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±10% Case: E Capacitance: 100µF Operating voltage: 20V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 0.15Ω |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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593D156X0025D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 15uF; 25VDC; SMD; D; 2917; ±20%; 250mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±20% Case: D Capacitance: 15µF Operating voltage: 25V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 0.25Ω |
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593D156X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 15uF; 10VDC; SMD; B; 1411; ±10%; 700mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 3528 Case - inch: 1411 Tolerance: ±10% Case: B Capacitance: 15µF Operating voltage: 10V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 700mΩ |
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593D156X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 15uF; 16VDC; SMD; C; 2312; ±10%; 400mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 6032 Case - inch: 2312 Tolerance: ±10% Case: C Capacitance: 15µF Operating voltage: 16V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 400mΩ |
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593D156X9025C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 15uF; 25VDC; SMD; C; 2312; ±10%; 425mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 6032 Case - inch: 2312 Tolerance: ±10% Case: C Capacitance: 15µF Operating voltage: 25V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 425mΩ |
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593D157X9010D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 150uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ Operating temperature: -55...125°C Mounting: SMD Kind of capacitor: low ESR Case - mm: 7343 Case - inch: 2917 Tolerance: ±10% Case: D Capacitance: 150µF Operating voltage: 10V DC Capacitors series: Tantamount Type of capacitor: tantalum ESR value: 100mΩ |
на замовлення 999 шт: термін постачання 21-30 дні (днів) |
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GRC00JE6821A00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 6.8mF Operating voltage: 10V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x20mm |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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| SIR165DP-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A Case: PowerPAK® SO8 Mounting: SMD On-state resistance: 7.5mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -30V Drain current: -60A Type of transistor: P-MOSFET Power dissipation: 65.8W Polarisation: unipolar Gate charge: 138nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -120A |
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| SI4164DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Case: SO8 Drain-source voltage: 30V Drain current: 30A On-state resistance: 3.9mΩ Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Gate charge: 95nC Technology: TrenchFET® |
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| SI7164DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 60A On-state resistance: 6.25mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Gate charge: 75nC Technology: TrenchFET® |
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| SIR164DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 50A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 69W Polarisation: unipolar Gate charge: 123nC Technology: TrenchFET® |
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TS53YJ501MR10 | VISHAY |
Category: Single turn SMD trimmers Description: Potentiometer: mounting; single turn; 500Ω; 250mW; SMD; ±20% Type of potentiometer: mounting Kind of potentiometer: single turn Resistance: 500Ω Power: 0.25W Mounting: SMD Tolerance: ±20% Temperature coefficient: 100ppm/°C Characteristics: linear Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C Track material: cermet Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° Torque: 1,5Ncm Max. operating voltage: 200V IP rating: IP67 |
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| VY1392M47Y5VQ6UV0 | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; suppression capacitor,X1,Y1; 3.9nF; Y5V; ±20% Kind of package: Ammo Pack Tolerance: ±20% Type of capacitor: ceramic Dielectric: Y5V Capacitance: 3.9nF Diameter: 12mm Kind of capacitor: suppression capacitor; X1; Y1 Operating voltage X class: 760V AC Operating voltage Y class: 500V AC Mounting: THT Terminal pitch: 10mm |
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| VY1392M47Y5VQ6UVX | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; suppression capacitor,X1,Y1; 3.9nF; Y5V; ±20% Kind of package: Ammo Pack Tolerance: ±20% Type of capacitor: ceramic Dielectric: Y5V Capacitance: 3.9nF Diameter: 12mm Kind of capacitor: suppression capacitor; X1; Y1 Operating voltage X class: 760V AC Operating voltage Y class: 500V AC Mounting: THT Terminal pitch: 12.5mm |
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SSA24-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMA; reel,tape Mounting: SMD Case: SMA Kind of package: reel; tape Max. off-state voltage: 40V Max. forward voltage: 0.36V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 60A Type of diode: Schottky rectifying |
на замовлення 4291 шт: термін постачання 21-30 дні (днів) |
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| IRFR9024TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.8A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR1N60ATRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR1N60ATRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFU1N60APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 36W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Gate charge: 14nC Kind of package: tube Kind of channel: enhanced |
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SIHFR1N60A-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.98A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of channel: enhanced |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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| SIHFR1N60ATRL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI7850ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 35.7W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 25mΩ Type of transistor: N-MOSFET |
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| SI7850DP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 4.5W Polarisation: unipolar Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 10.3A On-state resistance: 31mΩ Type of transistor: N-MOSFET |
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| GSC00AK3321AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 3.3mF; 10VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 3.3mF Operating voltage: 10V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 16x16.5mm Height: 16.5mm |
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| GSC00CX3320JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 3.3mF; 6.3VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 3.3mF Operating voltage: 6.3V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 12.5x16mm Height: 16mm |
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CRCW0603332RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 332Ω; 0.1W; ±1%; -55÷155°C Operating temperature: -55...155°C Tolerance: ±1% Max. operating voltage: 75V Power: 0.1W Type of resistor: thick film Mounting: SMD Case - mm: 1608 Case - inch: 0603 Resistance: 332Ω |
на замовлення 10800 шт: термін постачання 21-30 дні (днів) |
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CRCW0805332KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 332kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 332kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
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CRCW1206332KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 332kΩ; 0.25W; ±1%; -55÷155°C Mounting: SMD Tolerance: ±1% Operating temperature: -55...155°C Power: 0.25W Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film Resistance: 332kΩ |
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CRCW1206332RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 332Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 332Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
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| IRL620PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
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| IRL620SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
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| IRL620STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
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IL217AT | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8 Mounting: SMD Case: SO8 Turn-on time: 3µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3kV CTR@If: 13%@1mA Type of optocoupler: optocoupler Collector-emitter voltage: 70V |
на замовлення 850 шт: термін постачання 21-30 дні (днів) |
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293D475X96R3A2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 6.3V DC Mounting: SMD Case: A Case - inch: 1206 Case - mm: 3216 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
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BZT03C24-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode Type of diode: Zener Power dissipation: 3.25W Zener voltage: 24V Kind of package: Ammo Pack Case: SOD57 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
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P6SMB16CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB16CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB16CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 600W Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB16CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 600W Max. off-state voltage: 13.6V Breakdown voltage: 16V Max. forward impulse current: 26.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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| SI7806ADN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® 1212-8 |
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| SI7806ADN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 14A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 3.7W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® 1212-8 |
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| IRFI740GLCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.7A Pulsed drain current: 23A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
| SI4401BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -50A; 0.95W; SO8
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.7A; Idm: -50A; 0.95W; SO8
Drain-source voltage: -40V
Drain current: -8.7A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
товар відсутній
| SI4401FDY-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -11A
Pulsed drain current: -80A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1072 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 55.88 грн |
| 9+ | 40.67 грн |
| 25+ | 36.6 грн |
| 30+ | 27.98 грн |
| 80+ | 26.44 грн |
| CRCW06038K66FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 8.66kΩ; 0.1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Mounting: SMD
Tolerance: ±1%
Case - mm: 1608
Case - inch: 0603
Type of resistor: thick film
Power: 0.1W
Resistance: 8.66kΩ
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 8.66kΩ; 0.1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Mounting: SMD
Tolerance: ±1%
Case - mm: 1608
Case - inch: 0603
Type of resistor: thick film
Power: 0.1W
Resistance: 8.66kΩ
Max. operating voltage: 75V
на замовлення 4600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.69 грн |
| 500+ | 0.81 грн |
| 1000+ | 0.49 грн |
| 3900+ | 0.21 грн |
| MKT182252225518 |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 2.2uF; 250VDC; ±10%; THT; 31.5x11.5x20.5mm
Type of capacitor: polyester
Mounting: THT
Capacitance: 2.2µF
Operating voltage: 250V DC
Tolerance: ±10%
Dimensions: 31.5x11.5x20.5mm
Category: THT Film Capacitors
Description: Capacitor: polyester; 2.2uF; 250VDC; ±10%; THT; 31.5x11.5x20.5mm
Type of capacitor: polyester
Mounting: THT
Capacitance: 2.2µF
Operating voltage: 250V DC
Tolerance: ±10%
Dimensions: 31.5x11.5x20.5mm
товар відсутній
| IRL530PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRL530STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF9540STRRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -19A; Idm: -72A; 150W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -72A
Drain-source voltage: -100V
Drain current: -19A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -19A; Idm: -72A; 150W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -72A
Drain-source voltage: -100V
Drain current: -19A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
товар відсутній
| 1.5KE130CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 1071 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.68 грн |
| 18+ | 20.05 грн |
| 46+ | 18.02 грн |
| 126+ | 17.04 грн |
| 500+ | 16.76 грн |
| 1.5KE13A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 13.05V; 82.4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13.05V
Max. forward impulse current: 82.4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 13.05V; 82.4A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13.05V
Max. forward impulse current: 82.4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
товар відсутній
| 1.5KE13CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13.05V; 82.4A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13.05V
Max. forward impulse current: 82.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13.05V; 82.4A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13.05V
Max. forward impulse current: 82.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
товар відсутній
| DG407DJ-E3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 2; DIP28; 5÷20V; tube
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 2
Case: DIP28
Supply voltage: 5...20V
Mounting: THT
Kind of package: tube
Resistance: 100Ω
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 2; DIP28; 5÷20V; tube
Type of integrated circuit: multiplexer
Output configuration: 8:1
Number of channels: 2
Case: DIP28
Supply voltage: 5...20V
Mounting: THT
Kind of package: tube
Resistance: 100Ω
товар відсутній
| DG454EY-T1-E3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 4; SO16; -15÷15V; reel,tape
Supply voltage: -15...15V
Type of integrated circuit: analog switch
Resistance: 5.3Ω
Kind of package: reel; tape
Output configuration: SPST-NC
Case: SO16
Number of channels: 4
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NC; Ch: 4; SO16; -15÷15V; reel,tape
Supply voltage: -15...15V
Type of integrated circuit: analog switch
Resistance: 5.3Ω
Kind of package: reel; tape
Output configuration: SPST-NC
Case: SO16
Number of channels: 4
Mounting: SMD
товар відсутній
| 593D107X0010D2TE3 | |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±20%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±20%
Case: D
Capacitance: 100µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±20%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±20%
Case: D
Capacitance: 100µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
на замовлення 238 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 54.37 грн |
| 10+ | 37.66 грн |
| 38+ | 22.16 грн |
| 102+ | 20.97 грн |
| 593D107X0016D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±20%; 125mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±20%
Case: D
Capacitance: 100µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 125mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±20%; 125mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±20%
Case: D
Capacitance: 100µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 125mΩ
товар відсутній
| 593D107X0020E2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 20VDC; SMD; E; 2917; ±20%; 150mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±20%
Case: E
Capacitance: 100µF
Operating voltage: 20V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 0.15Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 20VDC; SMD; E; 2917; ±20%; 150mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±20%
Case: E
Capacitance: 100µF
Operating voltage: 20V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 0.15Ω
товар відсутній
| 593D107X9010D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: D
Capacitance: 100µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: D
Capacitance: 100µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 39.27 грн |
| 12+ | 31.34 грн |
| 593D107X9016D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: D
Capacitance: 100µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 125mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; D; 2917; ±10%; 125mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: D
Capacitance: 100µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 125mΩ
на замовлення 747 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.45 грн |
| 10+ | 41.09 грн |
| 34+ | 24.54 грн |
| 92+ | 23.21 грн |
| 593D107X9016E2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: E
Capacitance: 100µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 16VDC; SMD; E; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: E
Capacitance: 100µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
на замовлення 375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 88.35 грн |
| 10+ | 66.62 грн |
| 18+ | 46.28 грн |
| 50+ | 43.48 грн |
| 593D107X9020E2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 20VDC; SMD; E; 2917; ±10%; 150mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: E
Capacitance: 100µF
Operating voltage: 20V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 0.15Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 20VDC; SMD; E; 2917; ±10%; 150mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: E
Capacitance: 100µF
Operating voltage: 20V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 0.15Ω
на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 49.09 грн |
| 593D156X0025D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 15uF; 25VDC; SMD; D; 2917; ±20%; 250mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±20%
Case: D
Capacitance: 15µF
Operating voltage: 25V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 0.25Ω
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 15uF; 25VDC; SMD; D; 2917; ±20%; 250mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±20%
Case: D
Capacitance: 15µF
Operating voltage: 25V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 0.25Ω
товар відсутній
| 593D156X9010B2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 15uF; 10VDC; SMD; B; 1411; ±10%; 700mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 3528
Case - inch: 1411
Tolerance: ±10%
Case: B
Capacitance: 15µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 700mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 15uF; 10VDC; SMD; B; 1411; ±10%; 700mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 3528
Case - inch: 1411
Tolerance: ±10%
Case: B
Capacitance: 15µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 700mΩ
товар відсутній
| 593D156X9016C2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 15uF; 16VDC; SMD; C; 2312; ±10%; 400mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 6032
Case - inch: 2312
Tolerance: ±10%
Case: C
Capacitance: 15µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 400mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 15uF; 16VDC; SMD; C; 2312; ±10%; 400mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 6032
Case - inch: 2312
Tolerance: ±10%
Case: C
Capacitance: 15µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 400mΩ
товар відсутній
| 593D156X9025C2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 15uF; 25VDC; SMD; C; 2312; ±10%; 425mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 6032
Case - inch: 2312
Tolerance: ±10%
Case: C
Capacitance: 15µF
Operating voltage: 25V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 425mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 15uF; 25VDC; SMD; C; 2312; ±10%; 425mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 6032
Case - inch: 2312
Tolerance: ±10%
Case: C
Capacitance: 15µF
Operating voltage: 25V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 425mΩ
товар відсутній
| 593D157X9010D2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 150uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: D
Capacitance: 150µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 150uF; 10VDC; SMD; D; 2917; ±10%; 100mΩ
Operating temperature: -55...125°C
Mounting: SMD
Kind of capacitor: low ESR
Case - mm: 7343
Case - inch: 2917
Tolerance: ±10%
Case: D
Capacitance: 150µF
Operating voltage: 10V DC
Capacitors series: Tantamount
Type of capacitor: tantalum
ESR value: 100mΩ
на замовлення 999 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.9 грн |
| 10+ | 49.16 грн |
| 30+ | 27.42 грн |
| 83+ | 25.95 грн |
| GRC00JE6821A00L |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 6.8mF
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 6.8mF
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.66 грн |
| 13+ | 28.05 грн |
| 50+ | 19.49 грн |
| 58+ | 14.3 грн |
| SIR165DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A
Case: PowerPAK® SO8
Mounting: SMD
On-state resistance: 7.5mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -30V
Drain current: -60A
Type of transistor: P-MOSFET
Power dissipation: 65.8W
Polarisation: unipolar
Gate charge: 138nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A
Case: PowerPAK® SO8
Mounting: SMD
On-state resistance: 7.5mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -30V
Drain current: -60A
Type of transistor: P-MOSFET
Power dissipation: 65.8W
Polarisation: unipolar
Gate charge: 138nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -120A
товар відсутній
| SI4164DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 95nC
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: SO8
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Gate charge: 95nC
Technology: TrenchFET®
товар відсутній
| SI7164DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 6.25mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 75nC
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 80A; 104W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 6.25mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 75nC
Technology: TrenchFET®
товар відсутній
| SIR164DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 123nC
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 50A; Idm: 70A; 69W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Case: PowerPAK® SO8
Drain-source voltage: 30V
Drain current: 50A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 123nC
Technology: TrenchFET®
товар відсутній
| TS53YJ501MR10 |
|
Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 500Ω; 250mW; SMD; ±20%
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 500Ω
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Track material: cermet
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Torque: 1,5Ncm
Max. operating voltage: 200V
IP rating: IP67
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 500Ω; 250mW; SMD; ±20%
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 500Ω
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Track material: cermet
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Torque: 1,5Ncm
Max. operating voltage: 200V
IP rating: IP67
товар відсутній
| VY1392M47Y5VQ6UV0 |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y1; 3.9nF; Y5V; ±20%
Kind of package: Ammo Pack
Tolerance: ±20%
Type of capacitor: ceramic
Dielectric: Y5V
Capacitance: 3.9nF
Diameter: 12mm
Kind of capacitor: suppression capacitor; X1; Y1
Operating voltage X class: 760V AC
Operating voltage Y class: 500V AC
Mounting: THT
Terminal pitch: 10mm
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y1; 3.9nF; Y5V; ±20%
Kind of package: Ammo Pack
Tolerance: ±20%
Type of capacitor: ceramic
Dielectric: Y5V
Capacitance: 3.9nF
Diameter: 12mm
Kind of capacitor: suppression capacitor; X1; Y1
Operating voltage X class: 760V AC
Operating voltage Y class: 500V AC
Mounting: THT
Terminal pitch: 10mm
товар відсутній
| VY1392M47Y5VQ6UVX |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y1; 3.9nF; Y5V; ±20%
Kind of package: Ammo Pack
Tolerance: ±20%
Type of capacitor: ceramic
Dielectric: Y5V
Capacitance: 3.9nF
Diameter: 12mm
Kind of capacitor: suppression capacitor; X1; Y1
Operating voltage X class: 760V AC
Operating voltage Y class: 500V AC
Mounting: THT
Terminal pitch: 12.5mm
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y1; 3.9nF; Y5V; ±20%
Kind of package: Ammo Pack
Tolerance: ±20%
Type of capacitor: ceramic
Dielectric: Y5V
Capacitance: 3.9nF
Diameter: 12mm
Kind of capacitor: suppression capacitor; X1; Y1
Operating voltage X class: 760V AC
Operating voltage Y class: 500V AC
Mounting: THT
Terminal pitch: 12.5mm
товар відсутній
| SSA24-E3/61T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMA; reel,tape
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.36V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMA; reel,tape
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.36V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Type of diode: Schottky rectifying
на замовлення 4291 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.84 грн |
| 33+ | 10.8 грн |
| 100+ | 8.19 грн |
| 274+ | 7.74 грн |
| 1800+ | 7.43 грн |
| IRFR9024TRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR1N60ATRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFR1N60ATRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRFU1N60APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHFR1N60A-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.98A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.98A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.98A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.63 грн |
| 20+ | 44.67 грн |
| 22+ | 38.57 грн |
| 59+ | 36.46 грн |
| SIHFR1N60ATRL-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 890mA; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI7850ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 35.7W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 35.7W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
товар відсутній
| SI7850DP-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 4.5W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 10.3A; Idm: 40A
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 4.5W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 10.3A
On-state resistance: 31mΩ
Type of transistor: N-MOSFET
товар відсутній
| GSC00AK3321AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3mF; 10VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 10V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x16.5mm
Height: 16.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3mF; 10VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 10V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 16x16.5mm
Height: 16.5mm
товар відсутній
| GSC00CX3320JARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3mF; 6.3VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 12.5x16mm
Height: 16mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 3.3mF; 6.3VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 3.3mF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 12.5x16mm
Height: 16mm
товар відсутній
| CRCW0603332RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 332Ω; 0.1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Tolerance: ±1%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
Mounting: SMD
Case - mm: 1608
Case - inch: 0603
Resistance: 332Ω
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 332Ω; 0.1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Tolerance: ±1%
Max. operating voltage: 75V
Power: 0.1W
Type of resistor: thick film
Mounting: SMD
Case - mm: 1608
Case - inch: 0603
Resistance: 332Ω
на замовлення 10800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.69 грн |
| 500+ | 0.81 грн |
| 1000+ | 0.49 грн |
| 3900+ | 0.21 грн |
| 5000+ | 0.19 грн |
| CRCW0805332KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 332kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 332kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 332kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 332kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній
| CRCW1206332KFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 332kΩ; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Power: 0.25W
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Resistance: 332kΩ
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 332kΩ; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Power: 0.25W
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Resistance: 332kΩ
товар відсутній
| CRCW1206332RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 332Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 332Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 332Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 332Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
товар відсутній
| IRL620PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
товар відсутній
| IRL620SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
товар відсутній
| IRL620STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W
Mounting: SMD
Case: D2PAK; TO263
Kind of package: reel; tape
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 21A
Drain-source voltage: 200V
Drain current: 5.2A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
товар відсутній
| IL217AT | |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8
Mounting: SMD
Case: SO8
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3kV
CTR@If: 13%@1mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3kV; Uce: 70V; SO8
Mounting: SMD
Case: SO8
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3kV
CTR@If: 13%@1mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
на замовлення 850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 33.98 грн |
| 13+ | 28.05 грн |
| 25+ | 25.24 грн |
| 39+ | 21.25 грн |
| 100+ | 20.34 грн |
| 105+ | 20.13 грн |
| 500+ | 19.35 грн |
| 293D475X96R3A2TE3 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
товар відсутній
| BZT03C24-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode
Type of diode: Zener
Power dissipation: 3.25W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: SOD57
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3.25W; 24V; Ammo Pack; SOD57; single diode
Type of diode: Zener
Power dissipation: 3.25W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: SOD57
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товар відсутній
| P6SMB16CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB16CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB16CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB16CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 16V; 26.7A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 600W
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 26.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| SI7806ADN-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| SI7806ADN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 14A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.7W
Polarisation: unipolar
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® 1212-8
товар відсутній
| IRFI740GLCPBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.7A; Idm: 23A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.7A
Pulsed drain current: 23A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній