| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| VDMG10A0 | VISHAY |
 Category: 7-segment LED displaysDescription: Display: LED; 7-segment; 10mm; 0.39"; No.char: 1; green; 0.11÷0.4mcd Mounting: SMD Operating voltage: 2...2.6V Dimensions: 9.8x15x3.75mm Wavelength: 572nm Kind of display: 7-segment Digit height: 10mm; 0.39" Type of display: LED Number of characters: 1 Luminosity: 0.11...0.4mcd Colour: green Common electrode: anode Operating current: 20mA |
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SMBJ43A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 47.8V; 8.6A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8V Max. forward impulse current: 8.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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MAL203135331E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 330uF; 16VDC; Ø10x18mm; ±20%; 3000h Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 16V DC Body dimensions: Ø10x18mm Tolerance: ±20% Leads: axial Service life: 3000h Operating temperature: -40...85°C |
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| SI4465ADY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -13.7A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 16mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI4465ADY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -8V Drain current: -13.7A Pulsed drain current: -40A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 16mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced |
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TEKT5400S | VISHAY |
Category: Phototransistors Description: Phototransistor; λp max: 920nm; 70V; 37°; λd: 850÷980nm Type of photoelement: phototransistor Wavelength of peak sensitivity: 920nm Collector-emitter voltage: 70V Viewing angle: 37° LED lens: black with IR filter Mounting: THT Wavelength: 850...980nm |
на замовлення 1878 шт: термін постачання 21-30 дні (днів) |
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| TEKT5400S-ASZ | VISHAY |
Category: Phototransistors Description: Phototransistor; λp max: 920nm; 70V; 37°; λd: 850÷980nm Type of photoelement: phototransistor Wavelength of peak sensitivity: 920nm Collector-emitter voltage: 70V Viewing angle: 37° LED lens: black with IR filter Mounting: THT Wavelength: 850...980nm |
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| SI3469DV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.7A Pulsed drain current: -25A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3469DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.7A Pulsed drain current: -25A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
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TCET1102 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 3µs Turn-off time: 4.7µs Max. off-state voltage: 6V Manufacturer series: TCET1100 |
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BZG03C10TR | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode |
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TLMO1000-GS08 | VISHAY |
Category: SMD colour LEDs Description: LED; SMD; 0603; orange; 3.55÷7.5mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.6V Type of diode: LED Mounting: SMD Case: 0603 LED colour: orange Luminosity: 3.55...7.5mcd Dimensions: 1.6x0.8x0.6mm Viewing angle: 80° LED current: 2mA Wavelength: 600...609nm Front: flat Operating voltage: 1.8...2.6V |
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MBB02070C6811FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 6.81kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 6.81kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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| MRS25000C6811FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 6.81kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 6.81kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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CRCW06036K81FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 6.81kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 6.81kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 10700 шт: термін постачання 21-30 дні (днів) |
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CRCW12066K81FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 6.81kΩ; 0.25W; ±1%; -55÷125°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 6.81kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...125°C |
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CRCW12066K81FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 6.81kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 6.81kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
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MMA02040C6811FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 6.81kΩ; 0.4W; ±1% Mounting: SMD Power: 0.4W Operating temperature: -55...155°C Type of resistor: thin film Case: 0204 MiniMELF Resistance: 6.81kΩ Tolerance: ±1% Body dimensions: Ø1.5x3.6mm Temperature coefficient: 50ppm/°C Max. operating voltage: 200V |
на замовлення 1375 шт: термін постачання 21-30 дні (днів) |
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SMM02040D6811BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 6.81kΩ; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 6.81kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
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SI2365EDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 5190 шт: термін постачання 21-30 дні (днів) |
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CRCW040249R9FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 49.9Ω Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
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CRCW080549R9FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 49.9Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
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CRCW080549R9FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 49.9Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 1199 шт: термін постачання 21-30 дні (днів) |
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CRCW120649R9FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 49.9Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 49.9Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 8500 шт: термін постачання 21-30 дні (днів) |
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CRCW251249R9FKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 49.9Ω; 1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 49.9Ω Power: 1W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
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VS-VSKT56/12 | VISHAY |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 60A; ADD-A-Pak; Igt: 150mA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: ADD-A-Pak Max. forward voltage: 1.7V Threshold on-voltage: 0.91V Max. forward impulse current: 1.2kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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| SI4447DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -30A Power dissipation: 2W Gate charge: 14nC Polarisation: unipolar Technology: TrenchFET® Drain current: -4.5A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±16V Case: SO8 On-state resistance: 72mΩ |
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| VBPW34FASR | VISHAY |
Category: Photodiodes Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 780...1050nm Viewing angle: 130° Active area: 7.5mm2 Front: flat LED lens: black Dimensions: 6.4x3.9x1.2mm LED version: reverse mount Operating temperature: -40...100°C |
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| VBPW34SR | VISHAY |
Category: Photodiodes Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 430...1100nm Viewing angle: 130° Active area: 7.5mm2 Front: flat Dimensions: 6.4x3.9x1.2mm LED version: reverse mount Operating temperature: -40...100°C |
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WKO221MCPCF0KR | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20% Type of capacitor: ceramic Kind of capacitor: suppression capacitor; X1; Y2 Capacitance: 220pF Dielectric: Y5T Tolerance: ±20% Mounting: THT Terminal pitch: 7.5mm Operating voltage X class: 440V AC Operating voltage Y class: 300V AC |
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WKO222MCPCJ0KR | VISHAY |
Category: THT ceramic capacitors Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20% Type of capacitor: ceramic Kind of capacitor: suppression capacitor; X1; Y2 Capacitance: 2.2nF Dielectric: Y5U Tolerance: ±20% Mounting: THT Terminal pitch: 7.5mm Operating voltage X class: 440V AC Operating voltage Y class: 300V AC |
на замовлення 2183 шт: термін постачання 21-30 дні (днів) |
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GBU4D-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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GBU4D-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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MBB02070C1623FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 162kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
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VJ0402Y103KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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VJ0603Y103KXJCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 10nF Operating voltage: 16V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 16494 шт: термін постачання 21-30 дні (днів) |
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CRCW12063K01FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.01kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 5600 шт: термін постачання 21-30 дні (днів) |
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RCA0603680KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 680kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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TSHG6410 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT Mounting: THT LED diameter: 5mm Type of diode: IR transmitter Wavelength: 875nm LED lens: transparent Viewing angle: 12° Optical power: 65mW |
на замовлення 3409 шт: термін постачання 21-30 дні (днів) |
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VS-16FL100S05 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.5V; 16A; cathode to stud; DO203AA; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.5V Load current: 16A Max. load current: 25A Semiconductor structure: cathode to stud Case: DO203AA Fastening thread: 10-32UNF-2A Mounting: screw type Features of semiconductor devices: fast switching Max. forward impulse current: 180A Kind of package: bulk Reverse recovery time: 0.5µs |
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| VS-240U100D | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.33V Load current: 320A Max. load current: 500A Semiconductor structure: cathode to stud Case: DO205AB Fastening thread: 3/4"-16UNF-2A Mounting: screw type Max. forward impulse current: 4.5kA Kind of package: bulk |
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| VS-240UR100D | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.33V Load current: 320A Max. load current: 500A Semiconductor structure: anode to stud Case: DO205AB Fastening thread: 3/4"-16UNF-2A Mounting: screw type Max. forward impulse current: 4.5kA Kind of package: bulk |
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VS-70HF100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.35V; 70A; cathode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.35V Load current: 70A Max. load current: 110A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1kA Kind of package: bulk |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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VS-70HFR100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.35V; 70A; anode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.35V Load current: 70A Max. load current: 110A Semiconductor structure: anode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1kA Kind of package: bulk |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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| VS-85HFR100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.2V; 85A; anode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.2V Load current: 85A Max. load current: 133A Semiconductor structure: anode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1.7kA Kind of package: bulk |
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CRCW12061K24FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1.24kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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CRCW12061K27FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1.27kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| 4N25-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 50%@10mA Collector-emitter voltage: 70V Case: SMD6 Conform to the norm: UL Turn-on time: 2µs Turn-off time: 2µs Max. off-state voltage: 6V Manufacturer series: 4N25 |
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| SIHP052N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 148A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 101nC Kind of package: tube Kind of channel: enhanced |
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| SIHP120N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| SIHP186N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 43A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 193mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| SIHP24N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 51A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhanced |
на замовлення 998 шт: термін постачання 21-30 дні (днів) |
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| SIHP24N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Pulsed drain current: 46A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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| SIR5102DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Pulsed drain current: 300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIR510DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 126A Pulsed drain current: 300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| SIHA2N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 29W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A |
товар відсутній |
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SIHD2N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W Case: DPAK; TO252 Mounting: SMD On-state resistance: 2.5Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 3.6A |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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| SIHD2N80E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape On-state resistance: 2.75Ω Drain current: 1.8A Drain-source voltage: 800V Power dissipation: 62.5W Polarisation: unipolar Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 5A |
товар відсутній |
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 |
SA18A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack Kind of package: Ammo Pack Type of diode: TVS Features of semiconductor devices: glass passivated Technology: TransZorb® Peak pulse power dissipation: 0.5kW Mounting: THT Case: DO15 Max. off-state voltage: 18V Semiconductor structure: unidirectional Max. forward impulse current: 17.1A Breakdown voltage: 20...22.1V Leakage current: 1µA |
товар відсутній |
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|
SA30A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack Type of diode: TVS Mounting: THT Max. off-state voltage: 30V Semiconductor structure: unidirectional Features of semiconductor devices: glass passivated Kind of package: Ammo Pack Max. forward impulse current: 10A Case: DO15 Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 500W Breakdown voltage: 33.3...36.8V |
товар відсутній |
| VDMG10A0 |
|
Виробник: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 1; green; 0.11÷0.4mcd
Mounting: SMD
Operating voltage: 2...2.6V
Dimensions: 9.8x15x3.75mm
Wavelength: 572nm
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Type of display: LED
Number of characters: 1
Luminosity: 0.11...0.4mcd
Colour: green
Common electrode: anode
Operating current: 20mA
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 1; green; 0.11÷0.4mcd
Mounting: SMD
Operating voltage: 2...2.6V
Dimensions: 9.8x15x3.75mm
Wavelength: 572nm
Kind of display: 7-segment
Digit height: 10mm; 0.39"
Type of display: LED
Number of characters: 1
Luminosity: 0.11...0.4mcd
Colour: green
Common electrode: anode
Operating current: 20mA
товар відсутній
| SMBJ43A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 47.8V; 8.6A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 47.8V; 8.6A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.63 грн |
| 50+ | 7.33 грн |
| 100+ | 6.47 грн |
| 155+ | 5.37 грн |
| 425+ | 5.08 грн |
| MAL203135331E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 16VDC; Ø10x18mm; ±20%; 3000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 16V DC
Body dimensions: Ø10x18mm
Tolerance: ±20%
Leads: axial
Service life: 3000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 16VDC; Ø10x18mm; ±20%; 3000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 16V DC
Body dimensions: Ø10x18mm
Tolerance: ±20%
Leads: axial
Service life: 3000h
Operating temperature: -40...85°C
товар відсутній
| SI4465ADY-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -13.7A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -13.7A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI4465ADY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -13.7A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -13.7A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -13.7A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TEKT5400S |
|
Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; λp max: 920nm; 70V; 37°; λd: 850÷980nm
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 920nm
Collector-emitter voltage: 70V
Viewing angle: 37°
LED lens: black with IR filter
Mounting: THT
Wavelength: 850...980nm
Category: Phototransistors
Description: Phototransistor; λp max: 920nm; 70V; 37°; λd: 850÷980nm
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 920nm
Collector-emitter voltage: 70V
Viewing angle: 37°
LED lens: black with IR filter
Mounting: THT
Wavelength: 850...980nm
на замовлення 1878 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 65.81 грн |
| 9+ | 44.43 грн |
| 25+ | 37.53 грн |
| 35+ | 24.51 грн |
| 94+ | 23.15 грн |
| TEKT5400S-ASZ |
|
Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; λp max: 920nm; 70V; 37°; λd: 850÷980nm
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 920nm
Collector-emitter voltage: 70V
Viewing angle: 37°
LED lens: black with IR filter
Mounting: THT
Wavelength: 850...980nm
Category: Phototransistors
Description: Phototransistor; λp max: 920nm; 70V; 37°; λd: 850÷980nm
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 920nm
Collector-emitter voltage: 70V
Viewing angle: 37°
LED lens: black with IR filter
Mounting: THT
Wavelength: 850...980nm
товар відсутній
| SI3469DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3469DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Pulsed drain current: -25A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| TCET1102 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 4.7µs
Max. off-state voltage: 6V
Manufacturer series: TCET1100
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 3µs
Turn-off time: 4.7µs
Max. off-state voltage: 6V
Manufacturer series: TCET1100
товар відсутній
| BZG03C10TR |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
товар відсутній
| TLMO1000-GS08 |
|
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; SMD; 0603; orange; 3.55÷7.5mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.6V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: orange
Luminosity: 3.55...7.5mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 2mA
Wavelength: 600...609nm
Front: flat
Operating voltage: 1.8...2.6V
Category: SMD colour LEDs
Description: LED; SMD; 0603; orange; 3.55÷7.5mcd; 1.6x0.8x0.6mm; 80°; 1.8÷2.6V
Type of diode: LED
Mounting: SMD
Case: 0603
LED colour: orange
Luminosity: 3.55...7.5mcd
Dimensions: 1.6x0.8x0.6mm
Viewing angle: 80°
LED current: 2mA
Wavelength: 600...609nm
Front: flat
Operating voltage: 1.8...2.6V
товар відсутній
| MBB02070C6811FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 6.81kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.81kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 6.81kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 6.81kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 170 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.34 грн |
| 100+ | 3.96 грн |
| MRS25000C6811FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 6.81kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 6.81kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 6.81kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 6.81kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| CRCW06036K81FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 6.81kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 6.81kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 6.81kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 6.81kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 10700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.73 грн |
| 500+ | 0.84 грн |
| 1000+ | 0.5 грн |
| 3900+ | 0.22 грн |
| 5000+ | 0.2 грн |
| CRCW12066K81FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 6.81kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 6.81kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 6.81kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 6.81kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...125°C
товар відсутній
| CRCW12066K81FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 6.81kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 6.81kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 6.81kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 6.81kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
товар відсутній
| MMA02040C6811FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 6.81kΩ; 0.4W; ±1%
Mounting: SMD
Power: 0.4W
Operating temperature: -55...155°C
Type of resistor: thin film
Case: 0204 MiniMELF
Resistance: 6.81kΩ
Tolerance: ±1%
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 6.81kΩ; 0.4W; ±1%
Mounting: SMD
Power: 0.4W
Operating temperature: -55...155°C
Type of resistor: thin film
Case: 0204 MiniMELF
Resistance: 6.81kΩ
Tolerance: ±1%
Body dimensions: Ø1.5x3.6mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 200V
на замовлення 1375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 5.02 грн |
| 150+ | 2.84 грн |
| 500+ | 2.03 грн |
| 700+ | 1.22 грн |
| SMM02040D6811BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 6.81kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 6.81kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 6.81kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 6.81kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| SI2365EDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 5190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.22 грн |
| 50+ | 7.33 грн |
| 100+ | 6.54 грн |
| 150+ | 5.68 грн |
| 415+ | 5.32 грн |
| CRCW040249R9FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 49.9Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 49.9Ω; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 49.9Ω
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
товар відсутній
| CRCW080549R9FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
товар відсутній
| CRCW080549R9FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 1199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.84 грн |
| 500+ | 0.91 грн |
| 1000+ | 0.55 грн |
| CRCW120649R9FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 49.9Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 49.9Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 49.9Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 49.9Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 8500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.23 грн |
| 1000+ | 0.79 грн |
| 2300+ | 0.37 грн |
| 5000+ | 0.33 грн |
| CRCW251249R9FKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 49.9Ω; 1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 49.9Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 49.9Ω; 1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 49.9Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
товар відсутній
| VS-VSKT56/12 |
|
Виробник: VISHAY
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; ADD-A-Pak; Igt: 150mA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: ADD-A-Pak
Max. forward voltage: 1.7V
Threshold on-voltage: 0.91V
Max. forward impulse current: 1.2kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; ADD-A-Pak; Igt: 150mA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: ADD-A-Pak
Max. forward voltage: 1.7V
Threshold on-voltage: 0.91V
Max. forward impulse current: 1.2kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1846.43 грн |
| 2+ | 1621.09 грн |
| SI4447DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2W
Gate charge: 14nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±16V
Case: SO8
On-state resistance: 72mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2W
Gate charge: 14nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -4.5A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±16V
Case: SO8
On-state resistance: 72mΩ
товар відсутній
| VBPW34FASR |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 6.4x3.9x1.2mm
LED version: reverse mount
Operating temperature: -40...100°C
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
LED lens: black
Dimensions: 6.4x3.9x1.2mm
LED version: reverse mount
Operating temperature: -40...100°C
товар відсутній
| VBPW34SR |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
LED version: reverse mount
Operating temperature: -40...100°C
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
LED version: reverse mount
Operating temperature: -40...100°C
товар відсутній
| WKO221MCPCF0KR |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 220pF
Dielectric: Y5T
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 220pF; Y5T; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 220pF
Dielectric: Y5T
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
товар відсутній
| WKO222MCPCJ0KR |
|
Виробник: VISHAY
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 2.2nF
Dielectric: Y5U
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
Category: THT ceramic capacitors
Description: Capacitor: ceramic; suppression capacitor,X1,Y2; 2.2nF; Y5U; ±20%
Type of capacitor: ceramic
Kind of capacitor: suppression capacitor; X1; Y2
Capacitance: 2.2nF
Dielectric: Y5U
Tolerance: ±20%
Mounting: THT
Terminal pitch: 7.5mm
Operating voltage X class: 440V AC
Operating voltage Y class: 300V AC
на замовлення 2183 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.98 грн |
| 25+ | 15.89 грн |
| 71+ | 11.86 грн |
| 195+ | 11.21 грн |
| GBU4D-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| GBU4D-E3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| MBB02070C1623FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 162kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 162kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 162kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
товар відсутній
| VJ0402Y103KXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 16V; X7R; ±10%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| VJ0603Y103KXJCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10nF; 16V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 10nF
Operating voltage: 16V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 16494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.81 грн |
| 800+ | 0.51 грн |
| 1200+ | 0.32 грн |
| 2900+ | 0.29 грн |
| 4000+ | 0.28 грн |
| CRCW12063K01FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.01kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.01kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 5600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.23 грн |
| 1000+ | 0.79 грн |
| 2300+ | 0.37 грн |
| 5000+ | 0.33 грн |
| RCA0603680KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 680kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 680kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 680kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| TSHG6410 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT
Mounting: THT
LED diameter: 5mm
Type of diode: IR transmitter
Wavelength: 875nm
LED lens: transparent
Viewing angle: 12°
Optical power: 65mW
Category: IR LEDs
Description: IR transmitter; 5mm; 875nm; transparent; 65mW; 12°; THT
Mounting: THT
LED diameter: 5mm
Type of diode: IR transmitter
Wavelength: 875nm
LED lens: transparent
Viewing angle: 12°
Optical power: 65mW
на замовлення 3409 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.55 грн |
| 13+ | 29.19 грн |
| 25+ | 19.55 грн |
| 75+ | 11.29 грн |
| 205+ | 10.71 грн |
| VS-16FL100S05 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.5V; 16A; cathode to stud; DO203AA; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.5V
Load current: 16A
Max. load current: 25A
Semiconductor structure: cathode to stud
Case: DO203AA
Fastening thread: 10-32UNF-2A
Mounting: screw type
Features of semiconductor devices: fast switching
Max. forward impulse current: 180A
Kind of package: bulk
Reverse recovery time: 0.5µs
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.5V; 16A; cathode to stud; DO203AA; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.5V
Load current: 16A
Max. load current: 25A
Semiconductor structure: cathode to stud
Case: DO203AA
Fastening thread: 10-32UNF-2A
Mounting: screw type
Features of semiconductor devices: fast switching
Max. forward impulse current: 180A
Kind of package: bulk
Reverse recovery time: 0.5µs
товар відсутній
| VS-240U100D |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: cathode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; cathode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: cathode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
товар відсутній
| VS-240UR100D |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: anode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.33V; 320A; anode to stud; DO205AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.33V
Load current: 320A
Max. load current: 500A
Semiconductor structure: anode to stud
Case: DO205AB
Fastening thread: 3/4"-16UNF-2A
Mounting: screw type
Max. forward impulse current: 4.5kA
Kind of package: bulk
товар відсутній
| VS-70HF100 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.35V; 70A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 613.15 грн |
| 3+ | 414.08 грн |
| 6+ | 391.79 грн |
| VS-70HFR100 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.35V; 70A; anode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.35V; 70A; anode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.35V
Load current: 70A
Max. load current: 110A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1kA
Kind of package: bulk
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 534.19 грн |
| 3+ | 386.76 грн |
| 6+ | 365.19 грн |
| VS-85HFR100 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.2V; 85A; anode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.2V; 85A; anode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
товар відсутній
| CRCW12061K24FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.24kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.24kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.24kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.23 грн |
| 1000+ | 0.79 грн |
| CRCW12061K27FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.27kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.27kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1.27kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 3.87 грн |
| 4N25-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 50%@10mA
Collector-emitter voltage: 70V
Case: SMD6
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Manufacturer series: 4N25
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 50%@10mA
Collector-emitter voltage: 70V
Case: SMD6
Conform to the norm: UL
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Manufacturer series: 4N25
товар відсутній
| SIHP052N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP120N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP186N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 43A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 193mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 43A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 193mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP24N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.84 грн |
| 5+ | 186.19 грн |
| 6+ | 158.15 грн |
| 15+ | 149.53 грн |
| 500+ | 145.21 грн |
| SIHP24N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIR5102DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 110A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIR510DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHA2N80E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
On-state resistance: 2.75Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 29W
Polarisation: unipolar
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 29W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
On-state resistance: 2.75Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 29W
Polarisation: unipolar
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 5A
товар відсутній
| SIHD2N80AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Case: DPAK; TO252
Mounting: SMD
On-state resistance: 2.5Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 62.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 3.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W
Case: DPAK; TO252
Mounting: SMD
On-state resistance: 2.5Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 62.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 3.6A
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.74 грн |
| 5+ | 86.99 грн |
| 12+ | 71.17 грн |
| SIHD2N80E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2.75Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 62.5W
Polarisation: unipolar
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 2.75Ω
Drain current: 1.8A
Drain-source voltage: 800V
Power dissipation: 62.5W
Polarisation: unipolar
Gate charge: 19.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Pulsed drain current: 5A
товар відсутній
| SA18A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack
Kind of package: Ammo Pack
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Mounting: THT
Case: DO15
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Max. forward impulse current: 17.1A
Breakdown voltage: 20...22.1V
Leakage current: 1µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 20÷22.1V; 17.1A; unidirectional; DO15; Ammo Pack
Kind of package: Ammo Pack
Type of diode: TVS
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Mounting: THT
Case: DO15
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Max. forward impulse current: 17.1A
Breakdown voltage: 20...22.1V
Leakage current: 1µA
товар відсутній
| SA30A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Mounting: THT
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 10A
Case: DO15
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 500W
Breakdown voltage: 33.3...36.8V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 33.3÷36.8V; 10A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Mounting: THT
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 10A
Case: DO15
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 500W
Breakdown voltage: 33.3...36.8V
товар відсутній