| Фото | Назва | Виробник | Інформація |
Доступність |
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SA33A-E3/73 | VISHAY |
 Category: Unidirectional THT transil diodesDescription: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 9.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 33V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 36.7...40.6V |
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SA36A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 8.6A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 36V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 40...44.2V |
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SA43A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 7.2A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 43V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 47.8...52.8V |
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SA45A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 45V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 6.9A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 50...55.3V |
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SA48A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 6.5A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 48V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 53.3...58.9V |
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SA51A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 6.1A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 51V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 56.7...62.7V |
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SA54A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 5.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 54V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 60...66.3V |
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SA58A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 5.3A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 58V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 64.4...71.2V |
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SA70A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 4.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 70V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 77.8...86V |
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SA75A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 75V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 4.1A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 83.3...92.1V |
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SA78A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 78V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 86.7...95.8V |
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SA85A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack Type of diode: TVS Max. off-state voltage: 85V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Features of semiconductor devices: glass passivated Max. forward impulse current: 3.6A Kind of package: Ammo Pack Leakage current: 1µA Technology: TransZorb® Peak pulse power dissipation: 0.5kW Breakdown voltage: 94.4...104V |
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SA90A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 3.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 90V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 100...111V |
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SA7.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 41.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 7V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 0.15mA Case: DO15 Type of diode: TVS Breakdown voltage: 7.78...8.6V |
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SA8.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15 Mounting: THT Max. forward impulse current: 36.8A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 8V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 25µA Case: DO15 Type of diode: TVS Breakdown voltage: 8.89...9.83V |
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SA8.5A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15 Mounting: THT Max. forward impulse current: 34.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 8.5V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 10µA Case: DO15 Type of diode: TVS Breakdown voltage: 9.44...10.4V |
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SA9.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack Mounting: THT Max. forward impulse current: 32.5A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 9V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 5µA Case: DO15 Type of diode: TVS Breakdown voltage: 10...11.1V |
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P6KE7.5A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE Mounting: THT Manufacturer series: P6KE Max. forward impulse current: 53.1A Peak pulse power dissipation: 0.6kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 6.4V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 0.5mA Case: DO15 Type of diode: TVS Breakdown voltage: 7.5V |
на замовлення 1043 шт: термін постачання 21-30 дні (днів) |
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SA90CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack Mounting: THT Max. forward impulse current: 3.4A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 90V Kind of package: Ammo Pack Semiconductor structure: bidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 100...111V |
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SA30CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack Mounting: THT Max. forward impulse current: 10A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 30V Kind of package: Ammo Pack Semiconductor structure: bidirectional Leakage current: 1µA Case: DO15 Type of diode: TVS Breakdown voltage: 33.3...36.8V |
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| AC10000001202JAB00 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 12kΩ; 10W; ±5%; Ø8x44mm; axial Power: 10W Resistance: 12kΩ Tolerance: ±5% Body dimensions: Ø8x44mm Leads: axial Conform to the norm: AEC Q200 Mounting: THT Type of resistor: wire-wound |
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RCA060312K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 12kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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MBB02070C1202FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 12kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 12kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 1080 шт: термін постачання 21-30 дні (днів) |
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MBB02070C4020FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 402Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 402Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads: axial |
на замовлення 1450 шт: термін постачання 21-30 дні (днів) |
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SMM02040D4020BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 402Ω; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 402Ω Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
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| 6N139-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; SMD8; 6N139 Type of optocoupler: optocoupler Insulation voltage: 5.3kV Output voltage: -5...18V Kind of output: Darlington Case: SMD8 Max. off-state voltage: 5V Mounting: SMD Number of channels: 1 Manufacturer series: 6N139 Slew rate: 500V/μs Conform to the norm: UL Turn-on time: 4µs Turn-off time: 6µs CTR@If: 500-2000%@1.6mA |
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| MRS25000C1600FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 160Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 160Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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CRCW08052K43FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 2.43kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 2.43kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
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| SI3499DV-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W Mounting: SMD Case: TSOP6 Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -20A Power dissipation: 2W Drain-source voltage: -8V Drain current: -7A On-state resistance: 48mΩ Type of transistor: P-MOSFET |
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| SI3499DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W Mounting: SMD Case: TSOP6 Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -20A Power dissipation: 2W Drain-source voltage: -8V Drain current: -7A On-state resistance: 48mΩ Type of transistor: P-MOSFET |
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| TSOP36238TR | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 50° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: SMD Viewing angle: 50° Supply voltage: 2.5...5.5V |
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| TSOP36238TT | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 50° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: SMD Viewing angle: 50° Supply voltage: 2.5...5.5V |
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SI6926ADQ-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8 Case: TSSOP8 Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 43mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD |
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| SI6926ADQ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 20A Case: TSSOP8 Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 43mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD |
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| MRS25000C5361FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 5.36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 5.36kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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SMM02040D5361BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.36kΩ; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 5.36kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
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| VEMT2500X01 | VISHAY |
Category: Phototransistors Description: Phototransistor; Gull wing; 1.8mm; λp max: 850nm; 20V; 15° Type of photoelement: phototransistor Case: Gull wing LED diameter: 1.8mm Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 20V Viewing angle: 15° LED lens: transparent Mounting: SMD Wavelength: 470...1090nm LED version: reverse mount |
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CRCW12061K50FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 1.5kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 1.5kΩ Tolerance: ±1% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 20700 шт: термін постачання 21-30 дні (днів) |
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VJ0402Y103JXQCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10nF; 10V; X7R; ±5%; SMD; 0402 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 10V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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SFH636 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; 1Mbps; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 30%@16mA Transfer rate: 1Mbps Collector-emitter voltage: 20V Case: DIP6 Turn-on time: 0.3µs Turn-off time: 0.3µs |
на замовлення 177 шт: термін постачання 21-30 дні (днів) |
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SFH636-X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 20V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 19-30%@16mA Collector-emitter voltage: 20V Case: DIP6 Turn-on time: 0.3µs Turn-off time: 0.3µs |
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CRCW2512680RFKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 680Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Mounting: SMD Tolerance: ±1% Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Type of resistor: thick film Power: 1W Resistance: 680Ω Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
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CRCW2512680RJNEGHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 680Ω; 1.5W; ±5%; -55÷155°C Mounting: SMD Tolerance: ±5% Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Type of resistor: thick film Power: 1.5W Resistance: 680Ω Temperature coefficient: 200ppm/°C Max. operating voltage: 500V |
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SMCJ51A-E3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 56.7V; 18.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 51V Breakdown voltage: 56.7V Max. forward impulse current: 18.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
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SMCJ54A-E3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 60V; 17.2A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
на замовлення 862 шт: термін постачання 21-30 дні (днів) |
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SMCJ54CA-E3/57T | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 63.15V; 17.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 63.15V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
на замовлення 773 шт: термін постачання 21-30 дні (днів) |
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SMCJ58A-E3/57T | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 67.8V; 16A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 67.8V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
на замовлення 420 шт: термін постачання 21-30 дні (днів) |
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| SIZ250DT-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 80A Power dissipation: 33W Gate-source voltage: ±20V On-state resistance: 18.87/18.11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
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| IL410-X001 | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; Uout: 600V; DIP6; Ch: 1; IL410; 35us Type of optocoupler: optotriac Insulation voltage: 4.42kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: THT Number of channels: 1 Manufacturer series: IL410 Conform to the norm: UL; VDE Turn-on time: 35µs |
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| IL410-X007 | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us Type of optocoupler: optotriac Insulation voltage: 4.42kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: SMD6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: SMD Number of channels: 1 Manufacturer series: IL410 Conform to the norm: UL Turn-on time: 35µs |
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| IL410-X009T | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us Type of optocoupler: optotriac Insulation voltage: 4.42kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: SMD6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: SMD Number of channels: 1 Manufacturer series: IL410 Conform to the norm: UL Turn-on time: 35µs |
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| IL410-X019T | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us Type of optocoupler: optotriac Insulation voltage: 4.42kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: SMD6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: SMD Number of channels: 1 Manufacturer series: IL410 Conform to the norm: UL; VDE Turn-on time: 35µs |
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| IL4108-X007 | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us Type of optocoupler: optotriac Insulation voltage: 4.42kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMD6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: SMD Number of channels: 1 Manufacturer series: IL4108 Conform to the norm: UL Turn-on time: 35µs |
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| IL4108-X007T | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us Type of optocoupler: optotriac Insulation voltage: 4.42kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMD6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: SMD Number of channels: 1 Manufacturer series: IL4108 Conform to the norm: UL Turn-on time: 35µs |
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| IL4108-X009T | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us Type of optocoupler: optotriac Insulation voltage: 4.42kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMD6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: SMD Number of channels: 1 Manufacturer series: IL4108 Conform to the norm: UL Turn-on time: 35µs |
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| IL4108-X017 | VISHAY |
Category: Optotriacs Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us Type of optocoupler: optotriac Insulation voltage: 4.42kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMD6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: SMD Number of channels: 1 Manufacturer series: IL4108 Conform to the norm: UL; VDE Turn-on time: 35µs |
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| SI7192DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 100A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.25mΩ Mounting: SMD Gate charge: 135nC Kind of package: reel; tape Kind of channel: enhanced |
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1N914TR | VISHAY |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V |
на замовлення 25272 шт: термін постачання 21-30 дні (днів) |
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MMA02040Z0000ZB000 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 0Ω; 250mW; Ø1.4x3.6mm Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 0Ω Power: 0.25W Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Conform to the norm: AEC Q200 |
на замовлення 5500 шт: термін постачання 21-30 дні (днів) |
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| TSOP6236TR | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷5.5V; 50° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: SMD Viewing angle: 50° Supply voltage: 2...5.5V |
товар відсутній |
| SA33A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 33V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 36.7...40.6V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 36.7÷40.6V; 9.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 9.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 33V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 36.7...40.6V
товар відсутній
| SA36A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 8.6A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 36V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 40...44.2V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 40÷44.2V; 8.6A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 8.6A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 36V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 40...44.2V
товар відсутній
| SA43A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 7.2A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 43V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 47.8...52.8V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 47.8÷52.8V; 7.2A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 7.2A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 43V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 47.8...52.8V
товар відсутній
| SA45A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 45V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 6.9A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 50...55.3V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 50÷55.3V; 6.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 45V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 6.9A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 50...55.3V
товар відсутній
| SA48A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 48V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 53.3...58.9V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 53.3÷58.9V; 6.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 48V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 53.3...58.9V
товар відсутній
| SA51A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.1A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 51V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 56.7...62.7V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 56.7÷62.7V; 6.1A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 6.1A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 51V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 56.7...62.7V
товар відсутній
| SA54A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 54V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 60...66.3V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 60÷66.3V; 5.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 54V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 60...66.3V
товар відсутній
| SA58A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.3A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 58V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 64.4...71.2V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 64.4÷71.2V; 5.3A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 5.3A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 58V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 64.4...71.2V
товар відсутній
| SA70A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 77.8...86V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 77.8÷86V; 4.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 70V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 77.8...86V
товар відсутній
| SA75A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 4.1A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 83.3...92.1V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 83.3÷92.1V; 4.1A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 75V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 4.1A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 83.3...92.1V
товар відсутній
| SA78A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 78V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 86.7...95.8V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 86.7÷95.8V; 4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 78V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 86.7...95.8V
товар відсутній
| SA85A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 85V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 3.6A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 94.4...104V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 94.4÷104V; 3.6A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 85V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Features of semiconductor devices: glass passivated
Max. forward impulse current: 3.6A
Kind of package: Ammo Pack
Leakage current: 1µA
Technology: TransZorb®
Peak pulse power dissipation: 0.5kW
Breakdown voltage: 94.4...104V
товар відсутній
| SA90A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 100÷111V; 3.4A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
товар відсутній
| SA7.0A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 41.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 7V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.15mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.78...8.6V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.78÷8.6V; 41.7A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 41.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 7V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.15mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.78...8.6V
товар відсутній
| SA8.0A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 36.8A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 25µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 8.89...9.83V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 8.89÷9.83V; 36.8A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 36.8A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 25µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 8.89...9.83V
товар відсутній
| SA8.5A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 34.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.5V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 9.44...10.4V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 9.44÷10.4V; 34.7A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 34.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.5V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 9.44...10.4V
товар відсутній
| SA9.0A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 32.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 9V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 10...11.1V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 10÷11.1V; 32.5A; unidirectional; DO15; Ammo Pack
Mounting: THT
Max. forward impulse current: 32.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 9V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 10...11.1V
товар відсутній
| P6KE7.5A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 53.1A
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 6.4V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.5mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.5V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 7.5V; 53.1A; unidirectional; DO15; Ammo Pack; P6KE
Mounting: THT
Manufacturer series: P6KE
Max. forward impulse current: 53.1A
Peak pulse power dissipation: 0.6kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 6.4V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.5mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.5V
на замовлення 1043 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 25.39 грн |
| 29+ | 12.72 грн |
| 91+ | 9.2 грн |
| 249+ | 8.7 грн |
| SA90CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100÷111V; 3.4A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 3.4A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 90V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 100...111V
товар відсутній
| SA30CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 10A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 30V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 33.3...36.8V
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 33.3÷36.8V; 10A; bidirectional; DO15; 500W; Ammo Pack
Mounting: THT
Max. forward impulse current: 10A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 30V
Kind of package: Ammo Pack
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DO15
Type of diode: TVS
Breakdown voltage: 33.3...36.8V
товар відсутній
| AC10000001202JAB00 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 12kΩ; 10W; ±5%; Ø8x44mm; axial
Power: 10W
Resistance: 12kΩ
Tolerance: ±5%
Body dimensions: Ø8x44mm
Leads: axial
Conform to the norm: AEC Q200
Mounting: THT
Type of resistor: wire-wound
Category: Power resistors
Description: Resistor: wire-wound; THT; 12kΩ; 10W; ±5%; Ø8x44mm; axial
Power: 10W
Resistance: 12kΩ
Tolerance: ±5%
Body dimensions: Ø8x44mm
Leads: axial
Conform to the norm: AEC Q200
Mounting: THT
Type of resistor: wire-wound
товар відсутній
| RCA060312K0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 12kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 12kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| MBB02070C1202FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 12kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 12kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 12kΩ; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 12kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 1080 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.77 грн |
| 100+ | 3.96 грн |
| 1000+ | 3.57 грн |
| MBB02070C4020FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 402Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 402Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 402Ω; 0.6W; ±1%; Ø2.5x6.5mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 402Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads: axial
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.77 грн |
| 100+ | 4.24 грн |
| 1000+ | 3.82 грн |
| SMM02040D4020BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 402Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 402Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 402Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 402Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| 6N139-X007 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; SMD8; 6N139
Type of optocoupler: optocoupler
Insulation voltage: 5.3kV
Output voltage: -5...18V
Kind of output: Darlington
Case: SMD8
Max. off-state voltage: 5V
Mounting: SMD
Number of channels: 1
Manufacturer series: 6N139
Slew rate: 500V/μs
Conform to the norm: UL
Turn-on time: 4µs
Turn-off time: 6µs
CTR@If: 500-2000%@1.6mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; SMD8; 6N139
Type of optocoupler: optocoupler
Insulation voltage: 5.3kV
Output voltage: -5...18V
Kind of output: Darlington
Case: SMD8
Max. off-state voltage: 5V
Mounting: SMD
Number of channels: 1
Manufacturer series: 6N139
Slew rate: 500V/μs
Conform to the norm: UL
Turn-on time: 4µs
Turn-off time: 6µs
CTR@If: 500-2000%@1.6mA
товар відсутній
| MRS25000C1600FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 160Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 160Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 160Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 160Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| CRCW08052K43FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.43kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.43kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.43kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 2.43kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.94 грн |
| 500+ | 0.95 грн |
| 1000+ | 0.58 грн |
| 5000+ | 0.2 грн |
| SI3499DV-T1-BE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
товар відсутній
| SI3499DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -7A; Idm: -20A; 2W
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -20A
Power dissipation: 2W
Drain-source voltage: -8V
Drain current: -7A
On-state resistance: 48mΩ
Type of transistor: P-MOSFET
товар відсутній
| TSOP36238TR |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
товар відсутній
| TSOP36238TT |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2.5...5.5V
товар відсутній
| SI6926ADQ-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.6A; 1W; TSSOP8
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
товар відсутній
| SI6926ADQ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 20A
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 4.5A; Idm: 20A
Case: TSSOP8
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
товар відсутній
| MRS25000C5361FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 5.36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 5.36kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 5.36kΩ; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 5.36kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| SMM02040D5361BB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.36kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.36kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 5.36kΩ; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 5.36kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
товар відсутній
| VEMT2500X01 |
|
Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; Gull wing; 1.8mm; λp max: 850nm; 20V; 15°
Type of photoelement: phototransistor
Case: Gull wing
LED diameter: 1.8mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 20V
Viewing angle: 15°
LED lens: transparent
Mounting: SMD
Wavelength: 470...1090nm
LED version: reverse mount
Category: Phototransistors
Description: Phototransistor; Gull wing; 1.8mm; λp max: 850nm; 20V; 15°
Type of photoelement: phototransistor
Case: Gull wing
LED diameter: 1.8mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 20V
Viewing angle: 15°
LED lens: transparent
Mounting: SMD
Wavelength: 470...1090nm
LED version: reverse mount
товар відсутній
| CRCW12061K50FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.5kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 1.5kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1.5kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 1.5kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 20700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.28 грн |
| 500+ | 1.23 грн |
| 1000+ | 0.79 грн |
| 2300+ | 0.37 грн |
| 5000+ | 0.33 грн |
| VJ0402Y103JXQCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 10V; X7R; ±5%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 10V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 10V; X7R; ±5%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 10V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| SFH636 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; 1Mbps; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 30%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 20V
Case: DIP6
Turn-on time: 0.3µs
Turn-off time: 0.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; 1Mbps; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 30%@16mA
Transfer rate: 1Mbps
Collector-emitter voltage: 20V
Case: DIP6
Turn-on time: 0.3µs
Turn-off time: 0.3µs
на замовлення 177 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.1 грн |
| 5+ | 71.89 грн |
| 25+ | 34.51 грн |
| 66+ | 33.07 грн |
| SFH636-X016 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 20V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 19-30%@16mA
Collector-emitter voltage: 20V
Case: DIP6
Turn-on time: 0.3µs
Turn-off time: 0.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 20V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 19-30%@16mA
Collector-emitter voltage: 20V
Case: DIP6
Turn-on time: 0.3µs
Turn-off time: 0.3µs
товар відсутній
| CRCW2512680RFKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 680Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Power: 1W
Resistance: 680Ω
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 680Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Power: 1W
Resistance: 680Ω
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
товар відсутній
| CRCW2512680RJNEGHP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 680Ω; 1.5W; ±5%; -55÷155°C
Mounting: SMD
Tolerance: ±5%
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Power: 1.5W
Resistance: 680Ω
Temperature coefficient: 200ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 680Ω; 1.5W; ±5%; -55÷155°C
Mounting: SMD
Tolerance: ±5%
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Type of resistor: thick film
Power: 1.5W
Resistance: 680Ω
Temperature coefficient: 200ppm/°C
Max. operating voltage: 500V
товар відсутній
| SMCJ51A-E3/57T |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 56.7V; 18.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 18.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 56.7V; 18.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 18.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
товар відсутній
| SMCJ54A-E3/57T |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 60V; 17.2A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 60V; 17.2A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
на замовлення 862 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.9 грн |
| 25+ | 15.82 грн |
| 64+ | 13.39 грн |
| 174+ | 12.66 грн |
| 250+ | 12.51 грн |
| 850+ | 12.15 грн |
| SMCJ54CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 63.15V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 63.15V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 63.15V; 17.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 63.15V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
на замовлення 773 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.77 грн |
| 25+ | 20.85 грн |
| 51+ | 16.59 грн |
| 140+ | 15.69 грн |
| SMCJ58A-E3/57T |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 67.8V; 16A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 67.8V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 67.8V; 16A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 67.8V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
на замовлення 420 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.67 грн |
| 25+ | 15.82 грн |
| 66+ | 12.9 грн |
| 181+ | 12.19 грн |
| SIZ250DT-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 80A
Power dissipation: 33W
Gate-source voltage: ±20V
On-state resistance: 18.87/18.11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 38A
Pulsed drain current: 80A
Power dissipation: 33W
Gate-source voltage: ±20V
On-state resistance: 18.87/18.11mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IL410-X001 |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; DIP6; Ch: 1; IL410; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: THT
Number of channels: 1
Manufacturer series: IL410
Conform to the norm: UL; VDE
Turn-on time: 35µs
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; DIP6; Ch: 1; IL410; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: THT
Number of channels: 1
Manufacturer series: IL410
Conform to the norm: UL; VDE
Turn-on time: 35µs
товар відсутній
| IL410-X007 |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL410
Conform to the norm: UL
Turn-on time: 35µs
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL410
Conform to the norm: UL
Turn-on time: 35µs
товар відсутній
| IL410-X009T |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL410
Conform to the norm: UL
Turn-on time: 35µs
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL410
Conform to the norm: UL
Turn-on time: 35µs
товар відсутній
| IL410-X019T |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL410
Conform to the norm: UL; VDE
Turn-on time: 35µs
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 600V; SMD6; Ch: 1; IL410; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL410
Conform to the norm: UL; VDE
Turn-on time: 35µs
товар відсутній
| IL4108-X007 |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL4108
Conform to the norm: UL
Turn-on time: 35µs
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL4108
Conform to the norm: UL
Turn-on time: 35µs
товар відсутній
| IL4108-X007T |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL4108
Conform to the norm: UL
Turn-on time: 35µs
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL4108
Conform to the norm: UL
Turn-on time: 35µs
товар відсутній
| IL4108-X009T |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL4108
Conform to the norm: UL
Turn-on time: 35µs
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL4108
Conform to the norm: UL
Turn-on time: 35µs
товар відсутній
| IL4108-X017 |
|
Виробник: VISHAY
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL4108
Conform to the norm: UL; VDE
Turn-on time: 35µs
Category: Optotriacs
Description: Optotriac; 4.42kV; Uout: 800V; SMD6; Ch: 1; IL4108; 35us
Type of optocoupler: optotriac
Insulation voltage: 4.42kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMD6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: SMD
Number of channels: 1
Manufacturer series: IL4108
Conform to the norm: UL; VDE
Turn-on time: 35µs
товар відсутній
| SI7192DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| 1N914TR |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
на замовлення 25272 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 12.39 грн |
| 49+ | 7.48 грн |
| 72+ | 5.03 грн |
| 106+ | 3.41 грн |
| 250+ | 2.82 грн |
| 500+ | 2.11 грн |
| 581+ | 1.46 грн |
| 1596+ | 1.38 грн |
| MMA02040Z0000ZB000 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 0Ω; 250mW; Ø1.4x3.6mm
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 0Ω
Power: 0.25W
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 0Ω; 250mW; Ø1.4x3.6mm
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 0Ω
Power: 0.25W
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
на замовлення 5500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.42 грн |
| 500+ | 1.27 грн |
| 900+ | 1.02 грн |
| 2300+ | 0.96 грн |
| TSOP6236TR |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷5.5V; 50°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: SMD
Viewing angle: 50°
Supply voltage: 2...5.5V
товар відсутній