| Фото | Назва | Виробник | Інформація |
Доступність |
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S1M-E3/5AT | VISHAY |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: DO214AC; SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 14524 шт: термін постачання 21-30 дні (днів) |
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S1M-M3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 12pF Case: DO214AC; SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
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SMBJ7.0A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 7.78V; 50A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.78V Max. forward impulse current: 50A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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SMBJ7.0D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 7.9V; 50.8A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7V Breakdown voltage: 7.9V Max. forward impulse current: 50.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.15mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
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SMBJ7.5D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 8.46V; 47.2A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.46V Max. forward impulse current: 47.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 75µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
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VSSA210-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Capacitance: 175pF Max. forward voltage: 0.7V Case: SMA Kind of package: reel; tape Max. forward impulse current: 60A |
на замовлення 3981 шт: термін постачання 21-30 дні (днів) |
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M24S4FF3900T30 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 390Ω; 0.4W; ±1%; -55÷155°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 390Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
на замовлення 3075 шт: термін постачання 21-30 дні (днів) |
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| GSC00BM2211CARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 220µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Height: 7.7mm Dimensions: 6.3x7.7mm Nominal life: 2000h |
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| GSC00BM2211CTFL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 220µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Height: 7.7mm Dimensions: 6.3x7.7mm Nominal life: 2000h |
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| VS-SD2500C12K | VISHAY |
Category: Diodes - others Description: Diode: hockey-puck rectifying; 1.2kV; 3kA; DO200AC; Ifsm: 31kA Type of diode: hockey-puck rectifying Max. off-state voltage: 1.2kV Load current: 3kA Case: DO200AC Mounting: Press-Pack Max. forward impulse current: 31kA Max. forward voltage: 0.76V Kind of package: bulk |
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P6SMB350A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 300V Breakdown voltage: 350V Max. forward impulse current: 1.24A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB350A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 300V Breakdown voltage: 350V Max. forward impulse current: 1.24A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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| IL300-DEFG-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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| IL300-E | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; DIP8; IL300 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: DIP8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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| IL300-EF-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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| IL300-EF-X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL; VDE Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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| IL300-F-X009 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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| IL300-F-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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| IL300-F-X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL; VDE Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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| IL300-X007 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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| IL300-X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4.42kV Case: SMD8 Conform to the norm: UL Turn-on time: 0.8µs Turn-off time: 0.8µs Max. off-state voltage: 5V Manufacturer series: IL300 |
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TZMB2V4-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
на замовлення 1850 шт: термін постачання 21-30 дні (днів) |
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TZMC2V4-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF Semiconductor structure: single diode |
на замовлення 27375 шт: термін постачання 21-30 дні (днів) |
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BY203-16STAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching Kind of package: Ammo Pack Max. forward impulse current: 20A Case: SOD57 Max. forward voltage: 2.4V Leakage current: 2µA Reverse recovery time: 300ns |
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ZM4749A-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; reel,tape; MELF; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MELF Semiconductor structure: single diode |
на замовлення 4265 шт: термін постачання 21-30 дні (днів) |
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SML4749-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Mounting: SMD Tolerance: ±10% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Leakage current: 5µA |
на замовлення 885 шт: термін постачання 21-30 дні (днів) |
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SML4749A-E3/61 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA Type of diode: Zener Power dissipation: 1W Semiconductor structure: single diode Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Zener voltage: 24V |
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| Si3410DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 30A Power dissipation: 4.1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3424CDV-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3433CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Drain-source voltage: -20V Drain current: -6A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 3.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Mounting: SMD Case: TSOP6 |
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| SI3437DV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3437DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.79Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3438DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3438DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3440DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3442BDV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Technology: TrenchFET® Mounting: SMD Case: TSOP6 Kind of package: reel; tape Drain current: 4.2A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 1.67W Polarisation: unipolar Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Drain-source voltage: 20V |
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| SI3442BDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Technology: TrenchFET® Mounting: SMD Case: TSOP6 Kind of package: reel; tape Drain current: 4.2A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 1.67W Polarisation: unipolar Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Drain-source voltage: 20V |
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| SI3443BDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 1.1W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3443CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.97A Pulsed drain current: -20A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3453DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -6A Power dissipation: 3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3456DDV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.3A Pulsed drain current: 20A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3457CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 113mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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| SI3459BDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A Kind of package: reel; tape Drain-source voltage: -60V Drain current: -2.9A On-state resistance: 288mΩ Type of transistor: P-MOSFET Power dissipation: 3.3W Polarisation: unipolar Gate charge: 12nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -8A Mounting: SMD Case: TSOP6 |
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SS10P6-M3/86A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 280A |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| SS10P6HM3-A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Capacitance: 560pF Max. forward voltage: 0.67V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 280A |
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| BFC233927473 | VISHAY |
Category: THT Film Capacitors Description: Capacitor: polypropylene; 47nF; THT; ±20%; 10mm; 630VDC; 310VAC Type of capacitor: polypropylene Capacitance: 47nF Mounting: THT Tolerance: ±20% Terminal pitch: 10mm Operating voltage: 310V AC; 630V DC Body dimensions: 12.5x4x10mm |
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| SFH6315T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; SOIC8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4kV CTR@If: 7-50%@16mA Transfer rate: 1Mbps Case: SOIC8 Conform to the norm: UL Turn-on time: 0.7µs Turn-off time: 0.5µs Max. off-state voltage: 3V Output voltage: -500mV...25V Manufacturer series: SFH6315 |
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| SS1P4L-M3/84A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.38V Case: SMP Kind of package: reel; tape Leakage current: 15mA Max. forward impulse current: 50A |
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SS1P5L-M3/84A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO220AA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Capacitance: 80pF Max. forward voltage: 0.59V Case: DO220AA Kind of package: reel; tape Max. forward impulse current: 50A |
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| SS2P2L-M3/84A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMP; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Case: SMP Kind of package: reel; tape |
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CRCW040213K0FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 13kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 13kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 10400 шт: термін постачання 21-30 дні (днів) |
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SMM02040C1372FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.7kΩ; 0.4W; ±1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 13.7kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
на замовлення 2203 шт: термін постачання 21-30 дні (днів) |
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SI2367DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23 Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -3A On-state resistance: 66mΩ Type of transistor: P-MOSFET |
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SQD25N15-52_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A Power dissipation: 107W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
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SUD25N15-52-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 50A; 136W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 25A Pulsed drain current: 50A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
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GRC00DC1011JTNL | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 10x12.5mm |
на замовлення 667 шт: термін постачання 21-30 дні (днів) |
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MAL202138101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø8x18mm; ±20%; 2500h Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Body dimensions: Ø8x18mm Tolerance: ±20% Leads: axial Service life: 2500h Operating temperature: -40...85°C |
на замовлення 308 шт: термін постачання 21-30 дні (днів) |
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MAL203138101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 3000h Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Body dimensions: Ø10x25mm Tolerance: ±20% Leads: axial Service life: 3000h Operating temperature: -40...85°C |
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MAL204838101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Body dimensions: Ø10x12mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Operating temperature: -40...105°C |
на замовлення 794 шт: термін постачання 21-30 дні (днів) |
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MAL204868101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 63V DC Body dimensions: Ø10x12mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Operating temperature: -40...105°C |
товар відсутній |
| S1M-E3/5AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 14524 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.37 грн |
| 52+ | 7.02 грн |
| 74+ | 4.9 грн |
| 123+ | 2.93 грн |
| 398+ | 2.08 грн |
| 1095+ | 1.97 грн |
| S1M-M3/5AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 12pF
Case: DO214AC; SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
товар відсутній
| SMBJ7.0A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.78V; 50A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.78V; 50A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.34 грн |
| 55+ | 6.95 грн |
| 100+ | 6.16 грн |
| 160+ | 5.24 грн |
| SMBJ7.0D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.9V; 50.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.9V
Max. forward impulse current: 50.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7.9V; 50.8A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.9V
Max. forward impulse current: 50.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| SMBJ7.5D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 8.46V; 47.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.46V
Max. forward impulse current: 47.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 75µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 8.46V; 47.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.46V
Max. forward impulse current: 47.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 75µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
товар відсутній
| VSSA210-E3/61T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.7V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 60A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.7V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 60A
на замовлення 3981 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 62.49 грн |
| 15+ | 24.36 грн |
| 25+ | 21.92 грн |
| 51+ | 16.6 грн |
| 138+ | 15.7 грн |
| M24S4FF3900T30 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 390Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 390Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 390Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 390Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
на замовлення 3075 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.25 грн |
| 125+ | 2.97 грн |
| 500+ | 1.21 грн |
| 875+ | 0.97 грн |
| 2375+ | 0.92 грн |
| GSC00BM2211CARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 7.7mm
Dimensions: 6.3x7.7mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 7.7mm
Dimensions: 6.3x7.7mm
Nominal life: 2000h
товар відсутній
| GSC00BM2211CTFL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 7.7mm
Dimensions: 6.3x7.7mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 16VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 7.7mm
Dimensions: 6.3x7.7mm
Nominal life: 2000h
товар відсутній
| VS-SD2500C12K |
|
Виробник: VISHAY
Category: Diodes - others
Description: Diode: hockey-puck rectifying; 1.2kV; 3kA; DO200AC; Ifsm: 31kA
Type of diode: hockey-puck rectifying
Max. off-state voltage: 1.2kV
Load current: 3kA
Case: DO200AC
Mounting: Press-Pack
Max. forward impulse current: 31kA
Max. forward voltage: 0.76V
Kind of package: bulk
Category: Diodes - others
Description: Diode: hockey-puck rectifying; 1.2kV; 3kA; DO200AC; Ifsm: 31kA
Type of diode: hockey-puck rectifying
Max. off-state voltage: 1.2kV
Load current: 3kA
Case: DO200AC
Mounting: Press-Pack
Max. forward impulse current: 31kA
Max. forward voltage: 0.76V
Kind of package: bulk
товар відсутній
| P6SMB350A-M3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 1.24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 1.24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| P6SMB350A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 1.24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 350V; 1.24A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 1.24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
товар відсутній
| IL300-DEFG-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-E |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; DIP8; IL300
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; DIP8; IL300
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: DIP8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-EF-X007 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-EF-X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-F-X009 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-F-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-F-X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL; VDE
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-X007 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| IL300-X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; Uinsul: 4.42kV; SMD8; IL300
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4.42kV
Case: SMD8
Conform to the norm: UL
Turn-on time: 0.8µs
Turn-off time: 0.8µs
Max. off-state voltage: 5V
Manufacturer series: IL300
товар відсутній
| TZMB2V4-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
на замовлення 1850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 3.38 грн |
| 177+ | 2.03 грн |
| 500+ | 1.8 грн |
| 557+ | 1.48 грн |
| 1530+ | 1.4 грн |
| TZMC2V4-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF
Semiconductor structure: single diode
на замовлення 27375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.68 грн |
| 275+ | 1.3 грн |
| 500+ | 1.17 грн |
| 800+ | 1.07 грн |
| 2175+ | 1.01 грн |
| 2500+ | 1 грн |
| 10000+ | 0.97 грн |
| BY203-16STAP |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 20A
Case: SOD57
Max. forward voltage: 2.4V
Leakage current: 2µA
Reverse recovery time: 300ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 20A
Case: SOD57
Max. forward voltage: 2.4V
Leakage current: 2µA
Reverse recovery time: 300ns
товар відсутній
| ZM4749A-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MELF
Semiconductor structure: single diode
на замовлення 4265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.35 грн |
| 40+ | 9.53 грн |
| 100+ | 8.45 грн |
| 120+ | 7.3 грн |
| 320+ | 6.9 грн |
| SML4749-E3/61 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±10%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 885 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.89 грн |
| 35+ | 11.68 грн |
| 95+ | 9.38 грн |
| 250+ | 8.81 грн |
| SML4749A-E3/61 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Zener voltage: 24V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 24V; SMD; reel,tape; SMA; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Semiconductor structure: single diode
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Zener voltage: 24V
товар відсутній
| Si3410DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3424CDV-T1-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3433CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: TSOP6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Mounting: SMD
Case: TSOP6
товар відсутній
| SI3437DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3437DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.79Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3438DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3438DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3440DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3442BDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Technology: TrenchFET®
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Drain current: 4.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.67W
Polarisation: unipolar
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Technology: TrenchFET®
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Drain current: 4.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.67W
Polarisation: unipolar
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 20V
товар відсутній
| SI3442BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Technology: TrenchFET®
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Drain current: 4.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.67W
Polarisation: unipolar
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Technology: TrenchFET®
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Drain current: 4.2A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.67W
Polarisation: unipolar
Gate charge: 5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 20V
товар відсутній
| SI3443BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3443CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.97A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.97A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3453DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3456DDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Pulsed drain current: 20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3457CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI3459BDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 288mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Mounting: SMD
Case: TSOP6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.9A; Idm: -8A
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 288mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -8A
Mounting: SMD
Case: TSOP6
товар відсутній
| SS10P6-M3/86A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.46 грн |
| 11+ | 34.67 грн |
| 25+ | 30.66 грн |
| 32+ | 26.51 грн |
| 86+ | 25.07 грн |
| SS10P6HM3-A/H |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 560pF
Max. forward voltage: 0.67V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 10A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Capacitance: 560pF
Max. forward voltage: 0.67V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 280A
товар відсутній
| BFC233927473 |
|
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 47nF; THT; ±20%; 10mm; 630VDC; 310VAC
Type of capacitor: polypropylene
Capacitance: 47nF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 10mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 12.5x4x10mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 47nF; THT; ±20%; 10mm; 630VDC; 310VAC
Type of capacitor: polypropylene
Capacitance: 47nF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 10mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 12.5x4x10mm
товар відсутній
| SFH6315T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 7-50%@16mA
Transfer rate: 1Mbps
Case: SOIC8
Conform to the norm: UL
Turn-on time: 0.7µs
Turn-off time: 0.5µs
Max. off-state voltage: 3V
Output voltage: -500mV...25V
Manufacturer series: SFH6315
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4kV; 1Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4kV
CTR@If: 7-50%@16mA
Transfer rate: 1Mbps
Case: SOIC8
Conform to the norm: UL
Turn-on time: 0.7µs
Turn-off time: 0.5µs
Max. off-state voltage: 3V
Output voltage: -500mV...25V
Manufacturer series: SFH6315
товар відсутній
| SS1P4L-M3/84A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMP
Kind of package: reel; tape
Leakage current: 15mA
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Case: SMP
Kind of package: reel; tape
Leakage current: 15mA
Max. forward impulse current: 50A
товар відсутній
| SS1P5L-M3/84A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO220AA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.59V
Case: DO220AA
Kind of package: reel; tape
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; DO220AA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.59V
Case: DO220AA
Kind of package: reel; tape
Max. forward impulse current: 50A
товар відсутній
| SS2P2L-M3/84A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Case: SMP
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SMP; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Case: SMP
Kind of package: reel; tape
товар відсутній
| CRCW040213K0FKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 13kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 13kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 13kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 13kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 10400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 0.93 грн |
| 1000+ | 0.38 грн |
| 4800+ | 0.17 грн |
| SMM02040C1372FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.7kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 13.7kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 13.7kΩ; 0.4W; ±1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 13.7kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
на замовлення 2203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.27 грн |
| 125+ | 2.98 грн |
| 500+ | 2.13 грн |
| SI2367DS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
товар відсутній
| SQD25N15-52_GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 107W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
товар відсутній
| SUD25N15-52-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 50A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 50A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| GRC00DC1011JTNL |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x12.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x12.5mm
на замовлення 667 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.16 грн |
| 30+ | 12.32 грн |
| 59+ | 6.09 грн |
| 100+ | 5.23 грн |
| 176+ | 4.73 грн |
| 484+ | 4.44 грн |
| MAL202138101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø8x18mm; ±20%; 2500h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø8x18mm
Tolerance: ±20%
Leads: axial
Service life: 2500h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø8x18mm; ±20%; 2500h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø8x18mm
Tolerance: ±20%
Leads: axial
Service life: 2500h
Operating temperature: -40...85°C
на замовлення 308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 109.55 грн |
| 14+ | 63 грн |
| 37+ | 59.56 грн |
| MAL203138101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 3000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 3000h
Operating temperature: -40...85°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x25mm; ±20%; 3000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x25mm
Tolerance: ±20%
Leads: axial
Service life: 3000h
Operating temperature: -40...85°C
товар відсутній
| MAL204838101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
на замовлення 794 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 69.44 грн |
| 10+ | 44.85 грн |
| 29+ | 29.26 грн |
| 79+ | 27.67 грн |
| MAL204868101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 63VDC; Ø10x12mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 63V DC
Body dimensions: Ø10x12mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
товар відсутній