Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BZX55B10-TAP | VISHAY |
![]() Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 5626 шт: термін постачання 21-30 дні (днів) |
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GRC00JG4702W00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 47µF Operating voltage: 450V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 1823 шт: термін постачання 21-30 дні (днів) |
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MAL204317479E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 47µF Operating voltage: 450V DC Body dimensions: Ø18x38mm Tolerance: ±20% Service life: 10000h Operating temperature: -25...85°C Leads: axial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GRC00JG3321E00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 168 шт: термін постачання 21-30 дні (днів) |
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IRF530PBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
на замовлення 2216 шт: термін постачання 21-30 дні (днів) |
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IRF530SPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
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BZX55C10-TAP | VISHAY |
![]() ![]() Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 5144 шт: термін постачання 21-30 дні (днів) |
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BZX55C12-TAP | VISHAY |
![]() Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: THT Tolerance: ±5% Kind of package: Ammo Pack Case: DO35 Semiconductor structure: single diode |
на замовлення 15706 шт: термін постачання 21-30 дні (днів) |
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MUR460-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.05V Reverse recovery time: 50ns Quantity in set/package: 1400pcs. |
на замовлення 1412 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Quantity in set/package: 5500pcs. Capacitance: 15pF |
на замовлення 18735 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/73 | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF |
на замовлення 5518 шт: термін постачання 21-30 дні (днів) |
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293D476X0025D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 3072 шт: термін постачання 21-30 дні (днів) |
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293D476X9025D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 25V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 4284 шт: термін постачання 21-30 дні (днів) |
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VJ1206Y104KXAMT | VISHAY |
![]() Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VJ1206Y104KXAPW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VJ1206Y104KXACW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 17101 шт: термін постачання 21-30 дні (днів) |
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SM6T6V8A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SM6T Technology: TransZorb® |
на замовлення 2434 шт: термін постачання 21-30 дні (днів) |
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1.5KE6.8A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1mA Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 1494 шт: термін постачання 21-30 дні (днів) |
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P6SMB6.8A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 6.8V; 57.1A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Technology: TransZorb® |
на замовлення 3473 шт: термін постачання 21-30 дні (днів) |
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SI4800BDY-T1-E3 | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Drain-source voltage: 30V Drain current: 7A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13nC Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: SO8 |
на замовлення 1875 шт: термін постачання 21-30 дні (днів) |
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1N4148-TAP | VISHAY |
![]() Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Case: DO35 Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: Ammo Pack |
на замовлення 41059 шт: термін постачання 21-30 дні (днів) |
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VS-HFA25TB60-M3 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 25A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 55pF Kind of package: tube Max. forward impulse current: 225A Case: TO220AC Max. forward voltage: 1.3V Reverse recovery time: 23ns |
на замовлення 617 шт: термін постачання 21-30 дні (днів) |
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IRFB20N50KPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 280W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
на замовлення 426 шт: термін постачання 21-30 дні (днів) |
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SIHA20N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHB20N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SIHG20N50C-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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SIHG20N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SiHH20N50E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHP20N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BPW34 | VISHAY |
![]() Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW Type of photoelement: PIN IR photodiode Mounting: THT Wavelength of peak sensitivity: 900nm Wavelength: 430...1000nm Active area: 7.5mm2 Dimensions: 5.4x4.3x3.2mm Viewing angle: 65° Radiant power: 215mW |
на замовлення 2695 шт: термін постачання 21-30 дні (днів) |
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BPW34S | VISHAY |
![]() ![]() Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW Type of photoelement: PIN IR photodiode Case: DIL Mounting: THT Wavelength of peak sensitivity: 900nm Wavelength: 430...1000nm Viewing angle: 65° Active area: 7.5mm2 Dimensions: 5.4x4.3x3.2mm Radiant power: 215mW |
на замовлення 486 шт: термін постачання 21-30 дні (днів) |
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VBPW34FAS | VISHAY |
![]() Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 780...1050nm Viewing angle: 130° Active area: 7.5mm2 Front: flat Dimensions: 6.4x3.9x1.2mm Operating temperature: -40...100°C LED lens: black |
на замовлення 816 шт: термін постачання 21-30 дні (днів) |
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VBPW34S | VISHAY |
![]() Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat Type of photoelement: PIN photodiode Case: Gull wing Mounting: SMD Wavelength of peak sensitivity: 940nm Wavelength: 430...1100nm Viewing angle: 130° Active area: 7.5mm2 Front: flat Dimensions: 6.4x3.9x1.2mm Operating temperature: -40...100°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MAL213661101E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm Mounting: THT Capacitance: 100µF Operating voltage: 50V DC Service life: 4000h Terminal pitch: 5mm Operating temperature: -55...105°C Tolerance: ±20% Body dimensions: Ø10x12mm Type of capacitor: electrolytic |
на замовлення 422 шт: термін постачання 21-30 дні (днів) |
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IRF9630PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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IRF9630SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement |
на замовлення 357 шт: термін постачання 21-30 дні (днів) |
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IRFI9630GPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.7A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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SIHJ7N65E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 17A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CRCW12060000Z0TABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C Mounting: SMD Resistance: 0Ω Tolerance: ±5% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
на замовлення 110650 шт: термін постачання 21-30 дні (днів) |
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BAV70-E3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal |
на замовлення 2063 шт: термін постачання 21-30 дні (днів) |
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BAV70-G3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF06M-E3/45 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM Max. off-state voltage: 0.6kV Load current: 1A Case: DFM Kind of package: tube Max. forward voltage: 1.1V Max. forward impulse current: 50A Electrical mounting: THT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
на замовлення 5021 шт: термін постачання 21-30 дні (днів) |
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DF06S-E3/45 | VISHAY |
![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.6kV Load current: 1A Case: DFS Kind of package: tube Max. forward voltage: 1.1V Max. forward impulse current: 50A Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF06S-E3/77 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.6kV Load current: 1A Case: DFS Kind of package: reel; tape Max. forward voltage: 1.1V Max. forward impulse current: 50A Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
на замовлення 2457 шт: термін постачання 21-30 дні (днів) |
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DF06SA-E3/77 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS Max. off-state voltage: 0.6kV Load current: 1A Case: DFS Kind of package: reel; tape Max. forward voltage: 1.1V Max. forward impulse current: 30A Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LL4148-GS08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel Quantity in set/package: 2500pcs. |
на замовлення 54499 шт: термін постачання 21-30 дні (днів) |
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LL4148-GS18 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel Quantity in set/package: 10000pcs. |
на замовлення 16776 шт: термін постачання 21-30 дні (днів) |
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1N4448WS-E3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.35A Power dissipation: 0.2W Kind of package: 7 inch reel Leakage current: 50µA Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4448WS-HE3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 0.35A Power dissipation: 0.2W Kind of package: 7 inch reel Leakage current: 50µA Quantity in set/package: 3000pcs. Application: automotive industry |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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GRC00JS4721E00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 16x31.5mm Service life: 2000h |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MAL215746471E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 470uF; 400VDC; Ø30x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 470µF Operating voltage: 400V DC Body dimensions: Ø30x50mm Terminal pitch: 10mm Tolerance: ±20% Service life: 5000h Operating temperature: -25...85°C |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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MAL204850472E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 4.7mF; 35VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 35V DC Body dimensions: Ø18x35mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C |
на замовлення 118 шт: термін постачання 21-30 дні (днів) |
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293D106X0050E2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: E |
на замовлення 160 шт: термін постачання 21-30 дні (днів) |
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293D106X9050D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 443 шт: термін постачання 21-30 дні (днів) |
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293D106X9050E2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: E |
на замовлення 214 шт: термін постачання 21-30 дні (днів) |
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293D475X0050D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 427 шт: термін постачання 21-30 дні (днів) |
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293D475X9050D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Roll diameter max.: 178mm Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 906 шт: термін постачання 21-30 дні (днів) |
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293D475X9025B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Mounting: SMD Case: B Case - inch: 1411 Case - mm: 3528 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 6086 шт: термін постачання 21-30 дні (днів) |
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293D475X9025C2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Mounting: SMD Case - inch: 2312 Case - mm: 6032 Operating temperature: -55...125°C Case: C Roll diameter max.: 178mm Manufacturer series: Tantamount |
на замовлення 1873 шт: термін постачання 21-30 дні (днів) |
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VJ0805Y105KXATW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 16705 шт: термін постачання 21-30 дні (днів) |
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BZX55B10-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 5626 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
125+ | 3.34 грн |
210+ | 1.83 грн |
500+ | 1.63 грн |
635+ | 1.40 грн |
1740+ | 1.33 грн |
GRC00JG4702W00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 1823 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 80.59 грн |
10+ | 42.94 грн |
33+ | 27.36 грн |
89+ | 25.93 грн |
MAL204317479E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Body dimensions: Ø18x38mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -25...85°C
Leads: axial
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; Ø18x38mm; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Body dimensions: Ø18x38mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -25...85°C
Leads: axial
товару немає в наявності
В кошику
од. на суму грн.
GRC00JG3321E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 168 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 67.97 грн |
11+ | 36.74 грн |
41+ | 22.07 грн |
111+ | 20.86 грн |
IRF530PBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2216 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.52 грн |
38+ | 23.89 грн |
102+ | 22.60 грн |
IRF530SPBF | ![]() |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 418 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.80 грн |
10+ | 43.99 грн |
30+ | 30.24 грн |
81+ | 28.72 грн |
BZX55C10-TAP | ![]() |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 5144 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.33 грн |
88+ | 4.31 грн |
107+ | 3.55 грн |
131+ | 2.89 грн |
151+ | 2.51 грн |
628+ | 1.41 грн |
1727+ | 1.33 грн |
BZX55C12-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO35
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO35
Semiconductor structure: single diode
на замовлення 15706 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.14 грн |
68+ | 5.59 грн |
111+ | 3.41 грн |
500+ | 2.73 грн |
557+ | 1.59 грн |
1530+ | 1.50 грн |
5000+ | 1.44 грн |
MUR460-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
на замовлення 1412 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.54 грн |
11+ | 34.77 грн |
49+ | 18.29 грн |
134+ | 17.31 грн |
1400+ | 17.08 грн |
1N4007-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Quantity in set/package: 5500pcs.
Capacitance: 15pF
на замовлення 18735 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.40 грн |
100+ | 6.33 грн |
250+ | 5.06 грн |
400+ | 4.44 грн |
450+ | 4.29 грн |
474+ | 1.87 грн |
1300+ | 1.77 грн |
1N4007-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
на замовлення 5518 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 6.96 грн |
100+ | 3.95 грн |
479+ | 1.85 грн |
1316+ | 1.75 грн |
293D476X0025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 3072 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.52 грн |
33+ | 26.91 грн |
91+ | 25.47 грн |
293D476X9025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 25V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 4284 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.82 грн |
10+ | 45.51 грн |
38+ | 23.28 грн |
105+ | 22.00 грн |
VJ1206Y104KXAMT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
VJ1206Y104KXAPW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
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В кошику
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VJ1206Y104KXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 17101 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
86+ | 4.74 грн |
125+ | 3.02 грн |
174+ | 2.18 грн |
195+ | 1.94 грн |
300+ | 1.67 грн |
500+ | 1.58 грн |
812+ | 1.09 грн |
2234+ | 1.03 грн |
SM6T6V8A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Technology: TransZorb®
на замовлення 2434 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.17 грн |
26+ | 14.97 грн |
50+ | 11.57 грн |
100+ | 10.05 грн |
213+ | 4.16 грн |
586+ | 3.93 грн |
1.5KE6.8A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 1494 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.96 грн |
12+ | 33.26 грн |
54+ | 16.63 грн |
146+ | 15.72 грн |
P6SMB6.8A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57.1A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57.1A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Technology: TransZorb®
на замовлення 3473 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.72 грн |
29+ | 13.30 грн |
35+ | 10.92 грн |
100+ | 7.82 грн |
197+ | 4.48 грн |
540+ | 4.23 грн |
3000+ | 4.17 грн |
SI4800BDY-T1-E3 | ![]() |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Drain-source voltage: 30V
Drain current: 7A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Drain-source voltage: 30V
Drain current: 7A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
на замовлення 1875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.14 грн |
12+ | 32.13 грн |
46+ | 19.43 грн |
125+ | 18.37 грн |
1N4148-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Case: DO35
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
на замовлення 41059 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.14 грн |
90+ | 4.23 грн |
123+ | 3.08 грн |
142+ | 2.68 грн |
500+ | 1.90 грн |
1180+ | 0.75 грн |
3250+ | 0.71 грн |
VS-HFA25TB60-M3 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 55pF
Kind of package: tube
Max. forward impulse current: 225A
Case: TO220AC
Max. forward voltage: 1.3V
Reverse recovery time: 23ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 55pF
Kind of package: tube
Max. forward impulse current: 225A
Case: TO220AC
Max. forward voltage: 1.3V
Reverse recovery time: 23ns
на замовлення 617 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 166.30 грн |
7+ | 140.60 грн |
18+ | 133.04 грн |
250+ | 127.75 грн |
IRFB20N50KPBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 280W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 280W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 426 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.47 грн |
3+ | 165.54 грн |
8+ | 114.14 грн |
22+ | 108.09 грн |
SIHA20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
SIHB20N50E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHG20N50C-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.02 грн |
SIHG20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SiHH20N50E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHP20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BPW34 |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Viewing angle: 65°
Radiant power: 215mW
Category: Photodiodes
Description: PIN IR photodiode; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Viewing angle: 65°
Radiant power: 215mW
на замовлення 2695 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.36 грн |
10+ | 39.99 грн |
25+ | 35.45 грн |
43+ | 20.79 грн |
117+ | 19.65 грн |
BPW34S | ![]() |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Radiant power: 215mW
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 900nm; 430÷1000nm; 65°; 215mW
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 900nm
Wavelength: 430...1000nm
Viewing angle: 65°
Active area: 7.5mm2
Dimensions: 5.4x4.3x3.2mm
Radiant power: 215mW
на замовлення 486 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.82 грн |
35+ | 25.93 грн |
94+ | 24.49 грн |
VBPW34FAS |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
LED lens: black
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 950nm; 780÷1050nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
LED lens: black
на замовлення 816 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.82 грн |
11+ | 35.15 грн |
46+ | 19.58 грн |
125+ | 18.52 грн |
VBPW34S |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
Category: Photodiodes
Description: PIN photodiode; Gull wing; SMD; 940nm; 430÷1100nm; 130°; flat
Type of photoelement: PIN photodiode
Case: Gull wing
Mounting: SMD
Wavelength of peak sensitivity: 940nm
Wavelength: 430...1100nm
Viewing angle: 130°
Active area: 7.5mm2
Front: flat
Dimensions: 6.4x3.9x1.2mm
Operating temperature: -40...100°C
товару немає в наявності
В кошику
од. на суму грн.
MAL213661101E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Service life: 4000h
Terminal pitch: 5mm
Operating temperature: -55...105°C
Tolerance: ±20%
Body dimensions: Ø10x12mm
Type of capacitor: electrolytic
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 50VDC; Ø10x12mm; Pitch: 5mm
Mounting: THT
Capacitance: 100µF
Operating voltage: 50V DC
Service life: 4000h
Terminal pitch: 5mm
Operating temperature: -55...105°C
Tolerance: ±20%
Body dimensions: Ø10x12mm
Type of capacitor: electrolytic
на замовлення 422 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 111.52 грн |
10+ | 58.36 грн |
27+ | 33.34 грн |
73+ | 31.52 грн |
IRF9630PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 52 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.01 грн |
10+ | 90.48 грн |
19+ | 46.56 грн |
IRF9630SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 357 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 183.97 грн |
10+ | 69.54 грн |
21+ | 43.84 грн |
56+ | 41.57 грн |
IRFI9630GPBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.7A; 35W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.7A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 352 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 99.31 грн |
10+ | 61.23 грн |
19+ | 47.62 грн |
52+ | 44.60 грн |
SIHJ7N65E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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CRCW12060000Z0TABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C
Mounting: SMD
Resistance: 0Ω
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; -55÷155°C
Mounting: SMD
Resistance: 0Ω
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
на замовлення 110650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
140+ | 2.93 грн |
260+ | 1.50 грн |
1040+ | 0.36 грн |
1310+ | 0.29 грн |
4860+ | 0.18 грн |
13380+ | 0.17 грн |
BAV70-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
на замовлення 2063 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.40 грн |
50+ | 7.56 грн |
100+ | 4.80 грн |
250+ | 3.98 грн |
500+ | 3.44 грн |
659+ | 1.35 грн |
1811+ | 1.27 грн |
BAV70-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
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В кошику
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DF06M-E3/45 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFM
Kind of package: tube
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 5021 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 31.75 грн |
19+ | 19.96 грн |
25+ | 15.27 грн |
76+ | 11.64 грн |
209+ | 11.04 грн |
DF06S-E3/45 | ![]() |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFS
Kind of package: tube
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFS
Kind of package: tube
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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од. на суму грн.
DF06S-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 2457 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.45 грн |
18+ | 21.92 грн |
54+ | 16.63 грн |
100+ | 16.48 грн |
147+ | 15.72 грн |
200+ | 15.42 грн |
250+ | 15.12 грн |
DF06SA-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Max. off-state voltage: 0.6kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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од. на суму грн.
LL4148-GS08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Quantity in set/package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Quantity in set/package: 2500pcs.
на замовлення 54499 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
94+ | 4.34 грн |
148+ | 2.57 грн |
295+ | 1.29 грн |
500+ | 0.78 грн |
1000+ | 0.52 грн |
2378+ | 0.37 грн |
6540+ | 0.35 грн |
LL4148-GS18 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
на замовлення 16776 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
76+ | 5.41 грн |
112+ | 3.40 грн |
230+ | 1.65 грн |
295+ | 1.29 грн |
500+ | 0.82 грн |
1000+ | 0.71 грн |
1534+ | 0.57 грн |
4221+ | 0.54 грн |
1N4448WS-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Power dissipation: 0.2W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Power dissipation: 0.2W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
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1N4448WS-HE3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Power dissipation: 0.2W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 0.35A
Power dissipation: 0.2W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
Application: automotive industry
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.33 грн |
76+ | 4.99 грн |
100+ | 3.82 грн |
275+ | 3.22 грн |
500+ | 3.14 грн |
755+ | 3.05 грн |
1000+ | 2.93 грн |
GRC00JS4721E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Service life: 2000h
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од. на суму грн.
MAL215746471E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 470uF; 400VDC; Ø30x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 470µF
Operating voltage: 400V DC
Body dimensions: Ø30x50mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 470uF; 400VDC; Ø30x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 470µF
Operating voltage: 400V DC
Body dimensions: Ø30x50mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
на замовлення 47 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 974.41 грн |
2+ | 658.39 грн |
4+ | 622.10 грн |
MAL204850472E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7mF; 35VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 35V DC
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7mF; 35VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 35V DC
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
на замовлення 118 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 407.84 грн |
6+ | 169.40 грн |
15+ | 160.16 грн |
293D106X0050E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
на замовлення 160 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 113.15 грн |
10+ | 83.15 грн |
15+ | 62.74 грн |
39+ | 58.96 грн |
293D106X9050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 107.45 грн |
10+ | 65.69 грн |
28+ | 31.67 грн |
77+ | 29.93 грн |
293D106X9050E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
на замовлення 214 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.19 грн |
18+ | 49.13 грн |
50+ | 46.87 грн |
293D475X0050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 427 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.08 грн |
10+ | 48.38 грн |
29+ | 30.99 грн |
79+ | 29.25 грн |
293D475X9050D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Roll diameter max.: 178mm
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Roll diameter max.: 178mm
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 906 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.94 грн |
10+ | 48.30 грн |
36+ | 24.94 грн |
98+ | 23.58 грн |
293D475X9025B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 6086 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.12 грн |
21+ | 18.14 грн |
50+ | 13.61 грн |
100+ | 11.94 грн |
125+ | 7.11 грн |
343+ | 6.73 грн |
2000+ | 6.58 грн |
293D475X9025C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
на замовлення 1873 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.77 грн |
16+ | 23.81 грн |
50+ | 17.61 грн |
96+ | 9.22 грн |
265+ | 8.69 грн |
1000+ | 8.39 грн |
VJ0805Y105KXATW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 16705 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
60+ | 7.98 грн |
160+ | 2.51 грн |
300+ | 2.04 грн |
490+ | 1.82 грн |
1340+ | 1.72 грн |
6000+ | 1.69 грн |