Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1N4448TAP | VISHAY |
![]() Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: Ammo Pack Power dissipation: 0.44W |
на замовлення 9744 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | VISHAY |
![]() Description: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: 14 inch reel Power dissipation: 0.44W Quantity in set/package: 10000pcs. |
на замовлення 26363 шт: термін постачання 21-30 дні (днів) |
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1N4448W-E3-08 | VISHAY |
![]() Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Power dissipation: 0.28W Kind of package: 7 inch reel Leakage current: 50µA Quantity in set/package: 3000pcs. |
на замовлення 5224 шт: термін постачання 21-30 дні (днів) |
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1N4448W-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Power dissipation: 0.28W Kind of package: 7 inch reel Leakage current: 50µA Quantity in set/package: 3000pcs. Application: automotive industry |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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SIHA240N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SIHD240N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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293D476X0016D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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293D476X9010B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Case: B Case - inch: 1411 Case - mm: 3528 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 548 шт: термін постачання 21-30 дні (днів) |
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293D476X9010C2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Case: C Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 4110 шт: термін постачання 21-30 дні (днів) |
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293D476X9016C2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Manufacturer series: Tantamount Operating temperature: -55...125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Case - mm: 6032 Case - inch: 2312 Mounting: SMD Case: C Tolerance: ±10% |
на замовлення 2657 шт: термін постачання 21-30 дні (днів) |
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293D476X9016D2TE3 | VISHAY |
![]() ![]() Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 5692 шт: термін постачання 21-30 дні (днів) |
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293D476X9020D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: D |
на замовлення 910 шт: термін постачання 21-30 дні (днів) |
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293D476X96R3B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 6.3V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 3528 Case - inch: 1411 Case: B |
на замовлення 558 шт: термін постачання 21-30 дні (днів) |
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293D477X96R3D2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 470µF Operating voltage: 6.3V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: 293D Case: D ESR value: 0.5Ω Case - mm: 7343 Case - inch: 2917 |
на замовлення 974 шт: термін постачання 21-30 дні (днів) |
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293D477X96R3E2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 470µF Operating voltage: 6.3V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case: E Case - mm: 7343 Case - inch: 2917 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VJ1206Y105KXATW1BC | VISHAY |
![]() Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C Kind of capacitor: MLCC |
на замовлення 17015 шт: термін постачання 21-30 дні (днів) |
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SMBJ18CA-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 3268 шт: термін постачання 21-30 дні (днів) |
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1N5408-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD Leakage current: 0.5mA Kind of package: 13 inch reel Type of diode: rectifying Mounting: THT Capacitance: 30pF Quantity in set/package: 1400pcs. Max. off-state voltage: 1kV Case: DO201AD Max. forward voltage: 1.2V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A |
на замовлення 3745 шт: термін постачання 21-30 дні (днів) |
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2W10G-E4/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round Max. forward impulse current: 60A Kind of package: bulk Electrical mounting: THT Version: round Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: WOG Leads: wire Ø 0.75mm Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 2A |
на замовлення 2468 шт: термін постачання 21-30 дні (днів) |
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CRCW0805120RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 120Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 49900 шт: термін постачання 21-30 дні (днів) |
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MAL214699111E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20% Type of capacitor: electrolytic Mounting: SMD Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -40...125°C Body dimensions: 16x16x21mm |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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MAL204831102E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C Manufacturer series: MAL2048 Terminal pitch: 7.5mm Body dimensions: Ø16x25mm |
на замовлення 114 шт: термін постачання 21-30 дні (днів) |
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MAL204861102E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C Terminal pitch: 7.5mm Body dimensions: Ø16x25mm |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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GRC00JE1021H00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x20mm Terminal pitch: 7.5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MAL215031102E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Terminal pitch: 7.5mm Body dimensions: Ø16x25mm |
на замовлення 271 шт: термін постачання 21-30 дні (днів) |
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ZRC00JG1021H00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 16x25mm |
на замовлення 252 шт: термін постачання 21-30 дні (днів) |
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SI7852DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 1.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SS26-E3/52T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs. Mounting: SMD Kind of package: 7 inch reel Type of diode: Schottky rectifying Load current: 2A Max. forward voltage: 0.7V Max. off-state voltage: 60V Quantity in set/package: 750pcs. Case: SMB Semiconductor structure: single diode Max. forward impulse current: 75A |
на замовлення 9349 шт: термін постачання 21-30 дні (днів) |
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SS26HE3_A/H | VISHAY |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs. Mounting: SMD Application: automotive industry Kind of package: 7 inch reel Type of diode: Schottky rectifying Load current: 2A Max. forward voltage: 0.7V Max. off-state voltage: 60V Quantity in set/package: 750pcs. Case: SMB Semiconductor structure: single diode Max. forward impulse current: 75A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26S-E3/5AT | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Leakage current: 10mA Kind of package: 13 inch reel Type of diode: Schottky rectifying Load current: 2A Max. forward voltage: 0.62V Max. off-state voltage: 60V Quantity in set/package: 7500pcs. Case: SMA Semiconductor structure: single diode Max. forward impulse current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26S-E3/61T | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Leakage current: 10mA Kind of package: 7 inch reel Type of diode: Schottky rectifying Load current: 2A Max. forward voltage: 0.62V Max. off-state voltage: 60V Quantity in set/package: 1800pcs. Case: SMA Semiconductor structure: single diode Max. forward impulse current: 40A |
на замовлення 1513 шт: термін постачання 21-30 дні (днів) |
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SISS26DN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W Mounting: SMD Drain-source voltage: 60V Drain current: 60A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 37nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
SISS26LDN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Mounting: SMD Drain-source voltage: 60V Drain current: 65A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Case: PowerPAK® 1212-8 Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSSS2600 | VISHAY |
![]() Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT Type of diode: IR transmitter Wavelength: 950nm LED lens: transparent Radiant power: 2.6mW Viewing angle: 25° Operating voltage: 1.25...1.6V DC Mounting: THT Dimensions: 3.6x2.2x5mm LED current: 100mA LED version: angular |
на замовлення 4813 шт: термін постачання 21-30 дні (днів) |
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IRF840ALPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF840APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 563 шт: термін постачання 21-30 дні (днів) |
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IRF840ASPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 393 шт: термін постачання 21-30 дні (днів) |
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IRF840ASTRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF840LCPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 742 шт: термін постачання 21-30 дні (днів) |
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IRF840SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 955 шт: термін постачання 21-30 дні (днів) |
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IRF840STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE10CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 103A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 20µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 689 шт: термін постачання 21-30 дні (днів) |
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BAS40-05-E3-08 | VISHAY |
![]() Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: 7 inch reel Leakage current: 0.1µA Power dissipation: 0.2W Capacitance: 5pF Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal Reverse recovery time: 5ns |
на замовлення 2132 шт: термін постачання 21-30 дні (днів) |
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1.5KE27CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 1333 шт: термін постачання 21-30 дні (днів) |
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TCST2300 | VISHAY |
![]() ![]() Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm Type of sensor: optocoupler Operation mode: through-beam (with slot) Slot width: 3.1mm Aperture width: 0.25mm Mounting: SMD; THT Body dimensions: 24.5x6.3x10.8mm Collector-emitter voltage: 70V Operating temperature: -55...85°C Kind of output: transistor Kind of optocoupler: slotted with flag Wavelength: 950nm Output current: 0.5mA |
на замовлення 3207 шт: термін постачання 21-30 дні (днів) |
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MMSZ5231B-E3-08 | VISHAY |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: SOD123 Semiconductor structure: single diode Quantity in set/package: 3000pcs. |
на замовлення 7320 шт: термін постачання 21-30 дні (днів) |
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CRCW0805110RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 110Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 12800 шт: термін постачання 21-30 дні (днів) |
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1N5822-E3/54 | VISHAY |
![]() Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Quantity in set/package: 1400pcs. |
на замовлення 3973 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TAP | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
на замовлення 7614 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TR | VISHAY |
![]() ![]() Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: 10 inch reel Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns Quantity in set/package: 5000pcs. |
на замовлення 1331 шт: термін постачання 21-30 дні (днів) |
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BZX85C27-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 27V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 20553 шт: термін постачання 21-30 дні (днів) |
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1.5KE400A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IRF740APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
на замовлення 327 шт: термін постачання 21-30 дні (днів) |
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IRF740ASPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
на замовлення 391 шт: термін постачання 21-30 дні (днів) |
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IRF740LCPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 39nC Kind of package: tube |
на замовлення 896 шт: термін постачання 21-30 дні (днів) |
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IRF740PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 731 шт: термін постачання 21-30 дні (днів) |
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IRF740SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: tube |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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IRF740STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE18CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 13 inch reel |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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1.5KE180A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 1531 шт: термін постачання 21-30 дні (днів) |
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1N4448TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.44W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.44W
на замовлення 9744 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 7.65 грн |
90+ | 4.23 грн |
125+ | 3.02 грн |
143+ | 2.65 грн |
250+ | 2.20 грн |
500+ | 1.88 грн |
669+ | 1.32 грн |
1839+ | 1.25 грн |
1N4448TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: 14 inch reel
Power dissipation: 0.44W
Quantity in set/package: 10000pcs.
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: 14 inch reel
Power dissipation: 0.44W
Quantity in set/package: 10000pcs.
на замовлення 26363 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.33 грн |
125+ | 3.02 грн |
500+ | 2.19 грн |
746+ | 1.19 грн |
2051+ | 1.12 грн |
1N4448W-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.28W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.28W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
на замовлення 5224 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 10.42 грн |
61+ | 6.20 грн |
100+ | 4.05 грн |
500+ | 2.96 грн |
503+ | 1.76 грн |
1382+ | 1.66 грн |
1N4448W-HE3-08 |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.28W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.28W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
Application: automotive industry
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
125+ | 3.26 грн |
150+ | 2.93 грн |
SIHA240N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHD240N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
293D476X0016D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 43 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.14 грн |
15+ | 25.85 грн |
293D476X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 548 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.56 грн |
23+ | 17.01 грн |
50+ | 13.15 грн |
100+ | 11.19 грн |
109+ | 8.09 грн |
300+ | 7.71 грн |
293D476X9010C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 4110 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.38 грн |
21+ | 18.14 грн |
50+ | 15.04 грн |
92+ | 9.68 грн |
200+ | 9.60 грн |
253+ | 9.07 грн |
293D476X9016C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Manufacturer series: Tantamount
Operating temperature: -55...125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Case - mm: 6032
Case - inch: 2312
Mounting: SMD
Case: C
Tolerance: ±10%
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Manufacturer series: Tantamount
Operating temperature: -55...125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Case - mm: 6032
Case - inch: 2312
Mounting: SMD
Case: C
Tolerance: ±10%
на замовлення 2657 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.19 грн |
19+ | 20.79 грн |
50+ | 17.76 грн |
69+ | 12.85 грн |
189+ | 12.17 грн |
1500+ | 11.72 грн |
293D476X9016D2TE3 | ![]() |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 5692 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.84 грн |
12+ | 34.24 грн |
50+ | 24.19 грн |
73+ | 12.18 грн |
200+ | 11.52 грн |
293D476X9020D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: D
на замовлення 910 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 51.28 грн |
13+ | 30.77 грн |
38+ | 23.43 грн |
100+ | 21.32 грн |
293D476X96R3B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
на замовлення 558 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.19 грн |
17+ | 22.53 грн |
19+ | 20.26 грн |
50+ | 15.72 грн |
100+ | 13.98 грн |
101+ | 8.77 грн |
278+ | 8.29 грн |
293D477X96R3D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
Case: D
ESR value: 0.5Ω
Case - mm: 7343
Case - inch: 2917
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
Case: D
ESR value: 0.5Ω
Case - mm: 7343
Case - inch: 2917
на замовлення 974 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 100.13 грн |
10+ | 76.35 грн |
18+ | 51.40 грн |
48+ | 48.38 грн |
293D477X96R3E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - mm: 7343
Case - inch: 2917
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - mm: 7343
Case - inch: 2917
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VJ1206Y105KXATW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1uF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Kind of capacitor: MLCC
на замовлення 17015 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 12.86 грн |
50+ | 8.09 грн |
250+ | 6.24 грн |
407+ | 2.17 грн |
1119+ | 2.06 грн |
2000+ | 1.99 грн |
SMBJ18CA-E3/52 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 3268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.05 грн |
23+ | 16.55 грн |
100+ | 10.66 грн |
136+ | 6.54 грн |
372+ | 6.18 грн |
1N5408-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Leakage current: 0.5mA
Kind of package: 13 inch reel
Type of diode: rectifying
Mounting: THT
Capacitance: 30pF
Quantity in set/package: 1400pcs.
Max. off-state voltage: 1kV
Case: DO201AD
Max. forward voltage: 1.2V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Leakage current: 0.5mA
Kind of package: 13 inch reel
Type of diode: rectifying
Mounting: THT
Capacitance: 30pF
Quantity in set/package: 1400pcs.
Max. off-state voltage: 1kV
Case: DO201AD
Max. forward voltage: 1.2V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
на замовлення 3745 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.63 грн |
18+ | 21.24 грн |
50+ | 17.61 грн |
100+ | 16.03 грн |
118+ | 7.48 грн |
325+ | 7.03 грн |
2W10G-E4/51 |
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Виробник: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Max. forward impulse current: 60A
Kind of package: bulk
Electrical mounting: THT
Version: round
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: WOG
Leads: wire Ø 0.75mm
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 2A
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Max. forward impulse current: 60A
Kind of package: bulk
Electrical mounting: THT
Version: round
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: WOG
Leads: wire Ø 0.75mm
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 2A
на замовлення 2468 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.31 грн |
10+ | 43.77 грн |
54+ | 16.55 грн |
148+ | 15.65 грн |
CRCW0805120RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 49900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.17 грн |
500+ | 1.11 грн |
1000+ | 0.69 грн |
2500+ | 0.37 грн |
5000+ | 0.34 грн |
MAL214699111E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -40...125°C
Body dimensions: 16x16x21mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -40...125°C
Body dimensions: 16x16x21mm
на замовлення 164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 297.94 грн |
6+ | 170.08 грн |
15+ | 160.25 грн |
100+ | 154.20 грн |
MAL204831102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Manufacturer series: MAL2048
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Manufacturer series: MAL2048
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
на замовлення 114 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 227.12 грн |
10+ | 97.51 грн |
25+ | 92.22 грн |
MAL204861102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
на замовлення 353 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 246.66 грн |
10+ | 98.27 грн |
25+ | 92.98 грн |
GRC00JE1021H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
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MAL215031102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
на замовлення 271 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 263.75 грн |
8+ | 111.12 грн |
22+ | 105.07 грн |
ZRC00JG1021H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
на замовлення 252 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 109.90 грн |
10+ | 65.61 грн |
26+ | 34.02 грн |
72+ | 32.20 грн |
SI7852DP-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
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SS26-E3/52T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
Semiconductor structure: single diode
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
Semiconductor structure: single diode
Max. forward impulse current: 75A
на замовлення 9349 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 31.75 грн |
20+ | 19.50 грн |
50+ | 13.00 грн |
100+ | 10.81 грн |
138+ | 6.43 грн |
377+ | 6.12 грн |
1500+ | 5.97 грн |
SS26HE3_A/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Application: automotive industry
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
Semiconductor structure: single diode
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Application: automotive industry
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
Semiconductor structure: single diode
Max. forward impulse current: 75A
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SS26S-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Leakage current: 10mA
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Leakage current: 10mA
Kind of package: 13 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
Semiconductor structure: single diode
Max. forward impulse current: 40A
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SS26S-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Leakage current: 10mA
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Leakage current: 10mA
Kind of package: 7 inch reel
Type of diode: Schottky rectifying
Load current: 2A
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
Semiconductor structure: single diode
Max. forward impulse current: 40A
на замовлення 1513 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.49 грн |
21+ | 18.67 грн |
28+ | 13.76 грн |
79+ | 11.19 грн |
218+ | 10.58 грн |
500+ | 10.20 грн |
SISS26DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
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SISS26LDN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 65A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Drain-source voltage: 60V
Drain current: 65A
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
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TSSS2600 |
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Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
на замовлення 4813 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.82 грн |
14+ | 27.82 грн |
25+ | 23.58 грн |
50+ | 20.03 грн |
60+ | 14.74 грн |
165+ | 13.98 грн |
IRF840ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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IRF840APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 563 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 134.32 грн |
10+ | 102.80 грн |
17+ | 52.91 грн |
46+ | 49.89 грн |
IRF840ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 393 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 150.60 грн |
10+ | 81.64 грн |
15+ | 60.47 грн |
41+ | 56.69 грн |
IRF840ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
IRF840LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 742 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.83 грн |
16+ | 58.20 грн |
42+ | 55.18 грн |
IRF840SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 955 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 142.46 грн |
10+ | 78.61 грн |
17+ | 53.67 грн |
45+ | 51.40 грн |
IRF840STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
1.5KE10CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 20µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 20µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 689 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.45 грн |
13+ | 30.08 грн |
50+ | 17.91 грн |
136+ | 16.93 грн |
BAS40-05-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Leakage current: 0.1µA
Power dissipation: 0.2W
Capacitance: 5pF
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Leakage current: 0.1µA
Power dissipation: 0.2W
Capacitance: 5pF
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Reverse recovery time: 5ns
на замовлення 2132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.21 грн |
48+ | 7.94 грн |
100+ | 4.56 грн |
354+ | 2.50 грн |
973+ | 2.36 грн |
1.5KE27CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 1333 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.82 грн |
15+ | 26.68 грн |
50+ | 17.84 грн |
137+ | 16.86 грн |
TCST2300 | ![]() |
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Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 0.25mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 0.5mA
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 0.25mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 0.5mA
на замовлення 3207 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.01 грн |
10+ | 62.74 грн |
23+ | 39.53 грн |
62+ | 37.34 грн |
MMSZ5231B-E3-08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
на замовлення 7320 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.77 грн |
61+ | 6.20 грн |
77+ | 4.93 грн |
107+ | 3.55 грн |
512+ | 1.77 грн |
1407+ | 1.67 грн |
CRCW0805110RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 12800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.17 грн |
500+ | 1.11 грн |
1000+ | 0.69 грн |
2500+ | 0.37 грн |
5000+ | 0.34 грн |
1N5822-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
на замовлення 3973 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.93 грн |
18+ | 21.54 грн |
89+ | 9.98 грн |
244+ | 9.45 грн |
BYV26C-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
на замовлення 7614 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.52 грн |
13+ | 29.48 грн |
68+ | 13.15 грн |
185+ | 12.47 грн |
5000+ | 12.17 грн |
BYV26C-TR | ![]() |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
на замовлення 1331 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.14 грн |
12+ | 33.11 грн |
20+ | 30.54 грн |
58+ | 15.50 грн |
158+ | 14.66 грн |
BZX85C27-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 20553 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.02 грн |
46+ | 8.24 грн |
54+ | 7.04 грн |
100+ | 5.53 грн |
250+ | 5.04 грн |
297+ | 2.98 грн |
817+ | 2.82 грн |
1000+ | 2.73 грн |
10000+ | 2.71 грн |
1.5KE400A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 203.51 грн |
IRF740APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
на замовлення 327 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 188.86 грн |
10+ | 86.17 грн |
14+ | 63.50 грн |
39+ | 60.47 грн |
IRF740ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
на замовлення 391 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 168.51 грн |
10+ | 103.56 грн |
14+ | 67.28 грн |
37+ | 63.50 грн |
IRF740LCPBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
на замовлення 896 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.81 грн |
19+ | 49.13 грн |
50+ | 46.11 грн |
IRF740PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 731 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 125.36 грн |
10+ | 98.27 грн |
23+ | 40.06 грн |
61+ | 37.79 грн |
IRF740SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
на замовлення 795 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 162.81 грн |
13+ | 73.32 грн |
34+ | 69.54 грн |
IRF740STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
1.5KE18CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
на замовлення 990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.89 грн |
12+ | 33.86 грн |
50+ | 17.84 грн |
137+ | 16.86 грн |
1.5KE180A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 1531 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.89 грн |
13+ | 30.84 грн |
49+ | 18.14 грн |
135+ | 17.16 грн |