Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SUM110N10-09-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 87A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhancement |
на замовлення 398 шт: термін постачання 21-30 дні (днів) |
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IRLR120TRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC On-state resistance: 0.27Ω Gate-source voltage: ±10V |
на замовлення 1227 шт: термін постачання 21-30 дні (днів) |
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MAL215756681E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 400V DC Body dimensions: Ø35x50mm Terminal pitch: 10mm Tolerance: ±20% Service life: 5000h Operating temperature: -25...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MAL219826681E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 400V DC Body dimensions: Ø35x60mm Tolerance: ±20% Service life: 15000h Operating temperature: -40...85°C Terminal pitch: 10mm |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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SIHA180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHB180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHD180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 40A Power dissipation: 156W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHG080N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 96A Power dissipation: 227W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHG180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHH080N60E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 96A Power dissipation: 184W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHH180N60E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 114W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHP180N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MAL219866151E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 150µF Operating voltage: 400V DC Body dimensions: Ø22x40mm Terminal pitch: 10mm Tolerance: ±20% Service life: 15000h Operating temperature: -40...85°C |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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WSL2512R2000FEA | VISHAY |
![]() Description: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.2Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 1459 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0A-E3/52 | VISHAY |
![]() ![]() Description: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: SMBJ Leakage current: 0.8mA |
на замовлення 9126 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0A-E3/5B | VISHAY |
![]() Description: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6735mV Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: 13 inch reel; tape Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 1966 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0CD-M3/H | VISHAY |
![]() Description: Diode: TVS; 600W; 6.5V; 65.9A; bidirectional; SMB; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.5V Max. forward impulse current: 65.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0D-M3/H | VISHAY |
![]() Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.5V Max. forward impulse current: 65.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 3701 шт: термін постачання 21-30 дні (днів) |
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BFC233840105 | VISHAY |
![]() Description: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±20% Terminal pitch: 22.5mm Operating voltage: 300V AC; 630V DC Body dimensions: 26x12x22mm |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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BFC233910105 | VISHAY |
![]() Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±10% Terminal pitch: 22.5mm Operating voltage: 310V AC; 630V DC Body dimensions: 26x12x22mm |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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BFC233921105 | VISHAY |
![]() Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±20% Terminal pitch: 27.5mm Operating voltage: 310V AC; 630V DC Body dimensions: 31x11x21mm |
на замовлення 145 шт: термін постачання 21-30 дні (днів) |
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BFC233926105 | VISHAY |
![]() Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±20% Terminal pitch: 22.5mm Operating voltage: 310V AC; 630V DC Body dimensions: 26x10x19.5mm |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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SFH6206-3X001T | VISHAY |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Case: Gull wing 4 Mounting: SMD Number of channels: 1 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 2.3µs Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@10mA Type of optocoupler: optocoupler |
на замовлення 521 шт: термін постачання 21-30 дні (днів) |
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BAT85S-TAP | VISHAY |
![]() Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: Ammo Pack |
на замовлення 4964 шт: термін постачання 21-30 дні (днів) |
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BAT85S-TR | VISHAY |
![]() Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: 14 inch reel |
на замовлення 7470 шт: термін постачання 21-30 дні (днів) |
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MAL213651222E3 | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Terminal pitch: 7.5mm Body dimensions: Ø18x35mm |
на замовлення 320 шт: термін постачання 21-30 дні (днів) |
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ZRC00KL2221H00L | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 18x35.5mm |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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SIHB12N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHF12N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHP12N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CRCW120627R0JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 27Ω; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 27Ω Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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293D226X9010A2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 3216 Case - inch: 1206 Case: A |
на замовлення 9571 шт: термін постачання 21-30 дні (днів) |
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293D226X9010B2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - mm: 3528 Case - inch: 1411 Case: B |
на замовлення 4216 шт: термін постачання 21-30 дні (днів) |
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IRF9520PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
на замовлення 737 шт: термін постачання 21-30 дні (днів) |
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IRF9520SPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRF9520STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -27A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTCLE100E3474JB0 | VISHAY |
![]() Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW Resistance: 470kΩ Power: 0.5W Type of sensor: NTC thermistor Material constant B: 4570K Mounting: THT Operating temperature: -40...125°C |
на замовлення 1821 шт: термін постачання 21-30 дні (днів) |
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CNY70 | VISHAY |
![]() Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective Type of sensor: optocoupler Collector-emitter voltage: 32V Kind of output: transistor Kind of optocoupler: reflective |
на замовлення 2388 шт: термін постачання 21-30 дні (днів) |
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1.5KE36A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE Technology: TransZorb® |
на замовлення 1033 шт: термін постачання 21-30 дні (днів) |
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1.5KE36CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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IRLZ44PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 28mΩ Mounting: THT Kind of channel: enhancement Gate charge: 66nC Kind of package: tube |
на замовлення 928 шт: термін постачання 21-30 дні (днів) |
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CRCW06034R70FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 0603; 4.7Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 4.7Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 13752 шт: термін постачання 21-30 дні (днів) |
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CRCW08054R70FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; -55÷155°C Tolerance: ±1% Max. operating voltage: 150V Case - mm: 2012 Case - inch: 0805 Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film Power: 0.125W Resistance: 4.7Ω |
на замовлення 17625 шт: термін постачання 21-30 дні (днів) |
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CRCW08054R70FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805 Tolerance: ±1% Max. operating voltage: 150V Manufacturer series: CRCW0805 Case - mm: 2012 Case - inch: 0805 Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film Power: 0.125W Resistance: 4.7Ω |
на замовлення 3400 шт: термін постачання 21-30 дні (днів) |
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CRCW12064R70FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷125°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...125°C |
на замовлення 6554 шт: термін постачання 21-30 дні (днів) |
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CRCW12064R70FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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CRCW12064R70JNEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
на замовлення 546 шт: термін постачання 21-30 дні (днів) |
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CRCW12064R70JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 15100 шт: термін постачання 21-30 дні (днів) |
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P16NP105MAB15 | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1MΩ Tolerance: ±20% Power: 1W Characteristics: linear Leads: solder lugs Track material: cermet Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Temperature coefficient: 150ppm/°C Potentiometer features: for industrial use; with knob Knob dimensions: Ø16x8mm Panel cutout diameter: 10mm Mounting: soldered |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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SI2302CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 6011 шт: термін постачання 21-30 дні (днів) |
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SI2302DDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4610 шт: термін постачання 21-30 дні (днів) |
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SIHB8N50D-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHF8N50D-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIHP8N50D-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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293D106X9063E2TE3 | VISHAY |
![]() Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Operating temperature: -55...125°C Capacitance: 10µF Operating voltage: 63V DC Tolerance: ±10% Manufacturer series: Tantamount Case - mm: 7343 Case - inch: 2917 Case: E |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BFC236855474 | VISHAY |
![]() Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT Type of capacitor: polyester Capacitance: 0.47µF Body dimensions: 8x20x26mm Mounting: THT Tolerance: ±10% Terminal pitch: 22.5mm Lead length: 0.8mm Operating temperature: -55...85°C Operating voltage: 220V AC; 400V DC |
на замовлення 398 шт: термін постачання 21-30 дні (днів) |
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DG408DJ-E3 | VISHAY |
![]() ![]() Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube Type of integrated circuit: multiplexer Case: DIP16 Number of channels: 1 Mounting: THT Kind of package: tube Output configuration: 8:1 Resistance: 100Ω Supply voltage: 5...20V; 5...36V |
на замовлення 491 шт: термін постачання 21-30 дні (днів) |
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DG408DQ-T1-E3 | VISHAY |
![]() Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape Type of integrated circuit: multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: reel; tape Application: automotive industry Output configuration: 8:1 Resistance: 100Ω |
на замовлення 3055 шт: термін постачання 21-30 дні (днів) |
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DG408DY-E3 | VISHAY |
![]() Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube Type of integrated circuit: multiplexer Number of channels: 1 Case: SO16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: tube Output configuration: 8:1 Resistance: 100Ω |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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DG408DY-T1-E3 | VISHAY |
![]() Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape Type of integrated circuit: multiplexer Number of channels: 1 Case: SO16 Supply voltage: 5...20V; 5...36V Mounting: SMD Kind of package: reel; tape Output configuration: 8:1 Resistance: 100Ω |
на замовлення 1079 шт: термін постачання 21-30 дні (днів) |
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SUM110N10-09-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 87A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 87A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
на замовлення 398 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 330.14 грн |
6+ | 181.18 грн |
14+ | 171.25 грн |
IRLR120TRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
On-state resistance: 0.27Ω
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
On-state resistance: 0.27Ω
Gate-source voltage: ±10V
на замовлення 1227 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.22 грн |
13+ | 30.89 грн |
25+ | 27.29 грн |
38+ | 23.65 грн |
104+ | 22.36 грн |
MAL215756681E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Body dimensions: Ø35x50mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Body dimensions: Ø35x50mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
товару немає в наявності
В кошику
од. на суму грн.
MAL219826681E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Body dimensions: Ø35x60mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Body dimensions: Ø35x60mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Terminal pitch: 10mm
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1395.49 грн |
2+ | 1225.48 грн |
5+ | 1224.71 грн |
SIHA180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHB180N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHD180N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHG080N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHG180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHH080N60E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHH180N60E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHP180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
MAL219866151E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 648.76 грн |
3+ | 429.24 грн |
6+ | 405.83 грн |
WSL2512R2000FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.2Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.2Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 1459 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.05 грн |
16+ | 24.16 грн |
25+ | 19.88 грн |
50+ | 18.35 грн |
63+ | 14.22 грн |
173+ | 13.46 грн |
SMBJ5.0A-E3/52 | ![]() |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: SMBJ
Leakage current: 0.8mA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: SMBJ
Leakage current: 0.8mA
на замовлення 9126 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.94 грн |
28+ | 13.91 грн |
40+ | 10.53 грн |
50+ | 9.95 грн |
100+ | 8.35 грн |
205+ | 4.37 грн |
563+ | 4.14 грн |
SMBJ5.0A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6735mV
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6735mV
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 1966 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.11 грн |
30+ | 13.00 грн |
38+ | 10.12 грн |
100+ | 6.31 грн |
194+ | 4.63 грн |
500+ | 4.43 грн |
532+ | 4.37 грн |
1000+ | 4.20 грн |
SMBJ5.0CD-M3/H |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 32 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.11 грн |
19+ | 20.26 грн |
SMBJ5.0D-M3/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 3701 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.23 грн |
31+ | 12.38 грн |
100+ | 8.64 грн |
174+ | 5.12 грн |
477+ | 4.89 грн |
BFC233840105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Operating voltage: 300V AC; 630V DC
Body dimensions: 26x12x22mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Operating voltage: 300V AC; 630V DC
Body dimensions: 26x12x22mm
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 617.47 грн |
3+ | 373.07 грн |
7+ | 352.43 грн |
BFC233910105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±10%
Terminal pitch: 22.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 26x12x22mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±10%
Terminal pitch: 22.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 26x12x22mm
на замовлення 84 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.69 грн |
14+ | 28.29 грн |
15+ | 27.22 грн |
25+ | 26.07 грн |
38+ | 24.08 грн |
BFC233921105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 31x11x21mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 31x11x21mm
на замовлення 145 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 82.33 грн |
10+ | 42.81 грн |
25+ | 35.09 грн |
32+ | 28.13 грн |
88+ | 26.68 грн |
BFC233926105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 26x10x19.5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Operating voltage: 310V AC; 630V DC
Body dimensions: 26x10x19.5mm
на замовлення 350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 226.41 грн |
10+ | 90.21 грн |
28+ | 85.62 грн |
SFH6206-3X001T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: Gull wing 4
Mounting: SMD
Number of channels: 1
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 2.3µs
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: Gull wing 4
Mounting: SMD
Number of channels: 1
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 2.3µs
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Type of optocoupler: optocoupler
на замовлення 521 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.10 грн |
10+ | 41.97 грн |
25+ | 37.77 грн |
48+ | 18.73 грн |
132+ | 17.66 грн |
BAT85S-TAP |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: Ammo Pack
на замовлення 4964 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.81 грн |
45+ | 8.64 грн |
80+ | 4.79 грн |
100+ | 3.88 грн |
300+ | 2.99 грн |
823+ | 2.83 грн |
BAT85S-TR |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
на замовлення 7470 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.11 грн |
39+ | 9.94 грн |
100+ | 6.52 грн |
317+ | 2.83 грн |
870+ | 2.68 грн |
MAL213651222E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø18x35mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø18x35mm
на замовлення 320 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 328.49 грн |
6+ | 161.31 грн |
16+ | 152.13 грн |
ZRC00KL2221H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
на замовлення 136 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 226.41 грн |
10+ | 126.14 грн |
13+ | 69.57 грн |
36+ | 65.75 грн |
SIHB12N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
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од. на суму грн.
SIHF12N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
товару немає в наявності
В кошику
од. на суму грн.
SIHP12N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
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од. на суму грн.
CRCW120627R0JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 27Ω; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 27Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 27Ω; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 27Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.20 грн |
500+ | 1.19 грн |
1000+ | 0.76 грн |
2600+ | 0.36 грн |
5000+ | 0.32 грн |
293D226X9010A2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3216
Case - inch: 1206
Case: A
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3216
Case - inch: 1206
Case: A
на замовлення 9571 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.69 грн |
22+ | 18.12 грн |
50+ | 12.38 грн |
100+ | 10.01 грн |
155+ | 5.81 грн |
425+ | 5.50 грн |
293D226X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - mm: 3528
Case - inch: 1411
Case: B
на замовлення 4216 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.99 грн |
23+ | 16.67 грн |
50+ | 13.46 грн |
140+ | 6.41 грн |
384+ | 6.06 грн |
IRF9520PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 737 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 84.80 грн |
10+ | 61.31 грн |
29+ | 30.94 грн |
80+ | 29.25 грн |
IRF9520SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; 60W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
IRF9520STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -27A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -27A
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В кошику
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NTCLE100E3474JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Resistance: 470kΩ
Power: 0.5W
Type of sensor: NTC thermistor
Material constant B: 4570K
Mounting: THT
Operating temperature: -40...125°C
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Resistance: 470kΩ
Power: 0.5W
Type of sensor: NTC thermistor
Material constant B: 4570K
Mounting: THT
Operating temperature: -40...125°C
на замовлення 1821 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.92 грн |
11+ | 38.00 грн |
46+ | 19.72 грн |
125+ | 18.65 грн |
CNY70 |
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Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Collector-emitter voltage: 32V
Kind of output: transistor
Kind of optocoupler: reflective
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Collector-emitter voltage: 32V
Kind of output: transistor
Kind of optocoupler: reflective
на замовлення 2388 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.16 грн |
10+ | 43.81 грн |
25+ | 32.11 грн |
76+ | 30.81 грн |
80+ | 30.12 грн |
1.5KE36A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Technology: TransZorb®
на замовлення 1033 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.34 грн |
13+ | 30.58 грн |
50+ | 26.83 грн |
53+ | 16.97 грн |
145+ | 16.05 грн |
1.5KE36CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.51 грн |
10+ | 57.57 грн |
50+ | 17.89 грн |
138+ | 16.90 грн |
IRLZ44PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 66nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 66nC
Kind of package: tube
на замовлення 928 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 164.66 грн |
10+ | 114.67 грн |
16+ | 56.57 грн |
44+ | 53.51 грн |
CRCW06034R70FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 4.7Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 4.7Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 4.7Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 4.7Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 13752 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.04 грн |
173+ | 2.22 грн |
241+ | 1.59 грн |
283+ | 1.35 грн |
500+ | 0.87 грн |
1000+ | 0.70 грн |
2000+ | 0.54 грн |
2204+ | 0.42 грн |
CRCW08054R70FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; -55÷155°C
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 4.7Ω
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; -55÷155°C
Tolerance: ±1%
Max. operating voltage: 150V
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 4.7Ω
на замовлення 17625 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
71+ | 5.85 грн |
179+ | 2.14 грн |
241+ | 1.59 грн |
271+ | 1.41 грн |
1000+ | 0.99 грн |
1137+ | 0.79 грн |
3125+ | 0.74 грн |
10000+ | 0.72 грн |
CRCW08054R70FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805
Tolerance: ±1%
Max. operating voltage: 150V
Manufacturer series: CRCW0805
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 4.7Ω
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805
Tolerance: ±1%
Max. operating voltage: 150V
Manufacturer series: CRCW0805
Case - mm: 2012
Case - inch: 0805
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 0.125W
Resistance: 4.7Ω
на замовлення 3400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 6.52 грн |
500+ | 2.75 грн |
900+ | 1.05 грн |
2400+ | 1.00 грн |
CRCW12064R70FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...125°C
на замовлення 6554 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.23 грн |
157+ | 2.45 грн |
205+ | 1.87 грн |
231+ | 1.66 грн |
500+ | 1.25 грн |
949+ | 0.94 грн |
2611+ | 0.89 грн |
5000+ | 0.86 грн |
CRCW12064R70FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 9.88 грн |
CRCW12064R70JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
на замовлення 546 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
57+ | 7.30 грн |
209+ | 1.83 грн |
278+ | 1.38 грн |
311+ | 1.23 грн |
500+ | 0.93 грн |
CRCW12064R70JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 15100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 2.45 грн |
500+ | 1.07 грн |
1000+ | 0.85 грн |
2500+ | 0.38 грн |
5000+ | 0.37 грн |
6700+ | 0.36 грн |
15000+ | 0.35 грн |
P16NP105MAB15 |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1MΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Leads: solder lugs
Track material: cermet
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use; with knob
Knob dimensions: Ø16x8mm
Panel cutout diameter: 10mm
Mounting: soldered
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1MΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Leads: solder lugs
Track material: cermet
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use; with knob
Knob dimensions: Ø16x8mm
Panel cutout diameter: 10mm
Mounting: soldered
на замовлення 39 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1472.88 грн |
2+ | 783.60 грн |
4+ | 740.79 грн |
SI2302CDS-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 6011 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.82 грн |
18+ | 22.48 грн |
50+ | 18.88 грн |
75+ | 18.04 грн |
90+ | 10.01 грн |
246+ | 9.48 грн |
SI2302DDS-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4610 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.77 грн |
18+ | 22.02 грн |
25+ | 17.74 грн |
100+ | 13.46 грн |
114+ | 7.87 грн |
314+ | 7.42 грн |
3000+ | 7.19 грн |
SIHB8N50D-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHF8N50D-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHP8N50D-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
293D106X9063E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Case - mm: 7343
Case - inch: 2917
Case: E
товару немає в наявності
В кошику
од. на суму грн.
BFC236855474 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Type of capacitor: polyester
Capacitance: 0.47µF
Body dimensions: 8x20x26mm
Mounting: THT
Tolerance: ±10%
Terminal pitch: 22.5mm
Lead length: 0.8mm
Operating temperature: -55...85°C
Operating voltage: 220V AC; 400V DC
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Type of capacitor: polyester
Capacitance: 0.47µF
Body dimensions: 8x20x26mm
Mounting: THT
Tolerance: ±10%
Terminal pitch: 22.5mm
Lead length: 0.8mm
Operating temperature: -55...85°C
Operating voltage: 220V AC; 400V DC
на замовлення 398 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 120.20 грн |
15+ | 61.16 грн |
40+ | 58.10 грн |
DG408DJ-E3 | ![]() |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Case: DIP16
Number of channels: 1
Mounting: THT
Kind of package: tube
Output configuration: 8:1
Resistance: 100Ω
Supply voltage: 5...20V; 5...36V
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; DIP16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Case: DIP16
Number of channels: 1
Mounting: THT
Kind of package: tube
Output configuration: 8:1
Resistance: 100Ω
Supply voltage: 5...20V; 5...36V
на замовлення 491 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 142.43 грн |
9+ | 106.26 грн |
24+ | 100.15 грн |
DG408DQ-T1-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Output configuration: 8:1
Resistance: 100Ω
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; TSSOP16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Output configuration: 8:1
Resistance: 100Ω
на замовлення 3055 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.90 грн |
10+ | 92.50 грн |
27+ | 87.15 грн |
3000+ | 86.39 грн |
DG408DY-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: tube
Output configuration: 8:1
Resistance: 100Ω
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; tube
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: tube
Output configuration: 8:1
Resistance: 100Ω
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 114.44 грн |
14+ | 67.28 грн |
37+ | 63.45 грн |
DG408DY-T1-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Output configuration: 8:1
Resistance: 100Ω
Category: Analog multiplexers and switches
Description: IC: multiplexer; 8: 1; Ch: 1; SO16; 5÷20V,5÷36V; reel,tape
Type of integrated circuit: multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 5...20V; 5...36V
Mounting: SMD
Kind of package: reel; tape
Output configuration: 8:1
Resistance: 100Ω
на замовлення 1079 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 135.84 грн |
10+ | 97.85 грн |
14+ | 68.04 грн |
37+ | 64.22 грн |