| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BAT54A-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 1315 шт: термін постачання 21-30 дні (днів) |
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BAT54A-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
на замовлення 1630 шт: термін постачання 21-30 дні (днів) |
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BAT54S-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.24V Max. load current: 0.3A Kind of package: 7 inch reel Quantity in set/package: 3000pcs. Features of semiconductor devices: small signal Capacitance: 10pF Reverse recovery time: 5ns Power dissipation: 0.23W Max. forward impulse current: 0.6A |
на замовлення 3986 шт: термін постачання 21-30 дні (днів) |
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BAT54S-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.23W Features of semiconductor devices: small signal Application: automotive industry Quantity in set/package: 3000pcs. |
на замовлення 3885 шт: термін постачання 21-30 дні (днів) |
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VS-10BQ100-M3/5BT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.59V Max. forward impulse current: 38A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. |
на замовлення 1384 шт: термін постачання 21-30 дні (днів) |
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VS-10BQ100HM3/5BT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.82V Max. forward impulse current: 780A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. Capacitance: 65pF Application: automotive industry |
на замовлення 3225 шт: термін постачання 21-30 дні (днів) |
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SI2307BDS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -12A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SI2307CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Power dissipation: 1.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4272 шт: термін постачання 21-30 дні (днів) |
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SMAJ15A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 7 inch reel; tape |
на замовлення 3484 шт: термін постачання 21-30 дні (днів) |
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IRFP240PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
на замовлення 1399 шт: термін постачання 21-30 дні (днів) |
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T63XB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Track material: cermet Kind of potentiometer: multiturn IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: THT Terminal pitch: 2.5x2.5mm Torque: 1Ncm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Manufacturer series: T63XB |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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T63YB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Track material: cermet Kind of potentiometer: multiturn IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: THT Terminal pitch: 2.5x2.5mm Torque: 1Ncm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Manufacturer series: T63YB |
на замовлення 919 шт: термін постачання 21-30 дні (днів) |
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T93XB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 10kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93XB Track material: cermet Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64Z; 67Z; 3296Z IP rating: IP67 Torque: 1.5Ncm Operating temperature: -55...125°C Operating voltage: 250V |
на замовлення 878 шт: термін постачання 21-30 дні (днів) |
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T93YB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 10kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YB Track material: cermet Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1.5Ncm Operating temperature: -55...125°C Operating voltage: 250V |
на замовлення 4568 шт: термін постачання 21-30 дні (днів) |
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1N5400-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Quantity in set/package: 1400pcs. Capacitance: 30pF Leakage current: 0.5mA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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VS-36MT60 | VISHAY |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 475A Electrical mounting: THT Version: square Max. forward voltage: 1.19V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: D-63 Kind of package: bulk |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP12N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX55C13-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 14920 шт: термін постачання 21-30 дні (днів) |
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IRFP244PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC Mounting: THT Polarisation: unipolar Gate charge: 63nC On-state resistance: 0.28Ω Power dissipation: 150W Drain current: 9.7A Gate-source voltage: ±20V Drain-source voltage: 250V Case: TO247AC Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube |
на замовлення 214 шт: термін постачання 21-30 дні (днів) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Kind of channel: enhancement Gate charge: 0.14µC Kind of package: tube |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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IRFP254PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 92A |
на замовлення 407 шт: термін постачання 21-30 дні (днів) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
на замовлення 486 шт: термін постачання 21-30 дні (днів) |
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IRFP264PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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1.5KE6.8CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 549 шт: термін постачання 21-30 дні (днів) |
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SS34-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs. Mounting: SMD Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 850pcs. Kind of package: 7 inch reel Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
на замовлення 1567 шт: термін постачання 21-30 дні (днів) |
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| SS34-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Mounting: SMD Leakage current: 20mA Max. forward voltage: 0.5V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 3500pcs. Kind of package: 13 inch reel Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
на замовлення 538 шт: термін постачання 21-30 дні (днів) |
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| IHLP5050CEER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 10µH Resistance: 30.4mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 7A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER1R0M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1µH Resistance: 3.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 24A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IHLP5050CEER1R5M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1.5µH Resistance: 5.1mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 19A Tolerance: ±20% |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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| IHLP5050CEER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 7.2mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 16A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER3R3M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 11mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 12A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER4R7M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 4.7µH Resistance: 14.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 10A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER5R6M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 5.6µH Resistance: 18.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 9.5A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER6R8M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 6.8µH Resistance: 19.8mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 9A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEERR47M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 0.47µH Resistance: 1.6mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 32A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEERR68M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 0.68µH Resistance: 2.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 28A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 10µH Resistance: 21.4mΩ Body dimensions: 12.9x12.9x5mm Operating current: 9A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 4.6mΩ Body dimensions: 12.9x12.9x5mm Operating current: 20A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER3R3M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 7.7mΩ Body dimensions: 12.9x12.9x5mm Operating current: 15A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER4R7M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 4.7µH Resistance: 12.8mΩ Body dimensions: 12.9x12.9x5mm Operating current: 12A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER6R8M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 6.8µH Resistance: 15.4mΩ Body dimensions: 12.9x12.9x5mm Operating current: 11A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050FDER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 10µH Resistance: 16.4mΩ Body dimensions: 12.9x12.9x6.4mm Operating current: 10A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050FDER1R0M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1µH Resistance: 1.7mΩ Body dimensions: 12.9x12.9x6.4mm Operating current: 32A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050FDER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 3.5mΩ Body dimensions: 12.9x12.9x6.4mm Operating current: 22A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050FDER3R3M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 5.7mΩ Body dimensions: 12.9x12.9x6.4mm Operating current: 18A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
2N7002-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 80mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
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2N7002K-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
2N7002K-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 4931 шт: термін постачання 21-30 дні (днів) |
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| SIHB15N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SF1600-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns Mounting: THT Type of diode: rectifying Case: SOD57 Semiconductor structure: single diode Reverse recovery time: 75ns Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. forward voltage: 3.4V Load current: 1A Kind of package: Ammo Pack Max. forward impulse current: 30A Max. off-state voltage: 1.6kV |
на замовлення 1865 шт: термін постачання 21-30 дні (днів) |
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SS16-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 13 inch reel Leakage current: 5mA Quantity in set/package: 7500pcs. |
на замовлення 6936 шт: термін постачання 21-30 дні (днів) |
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SS16-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 8891 шт: термін постачання 21-30 дні (днів) |
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SS16HE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Application: automotive industry |
на замовлення 7028 шт: термін постачання 21-30 дні (днів) |
|
| BAT54A-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 1315 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.77 грн |
| 80+ | 4.95 грн |
| 100+ | 4.03 грн |
| 500+ | 3.45 грн |
| 1000+ | 3.22 грн |
| BAT54A-HE3-08 |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
на замовлення 1630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.42 грн |
| 125+ | 3.16 грн |
| 500+ | 2.79 грн |
| BAT54S-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.24V
Max. load current: 0.3A
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Features of semiconductor devices: small signal
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
на замовлення 3986 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.62 грн |
| 75+ | 5.27 грн |
| 101+ | 3.91 грн |
| 500+ | 3.11 грн |
| 1000+ | 2.79 грн |
| 3000+ | 2.32 грн |
| BAT54S-HE3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.23W
Features of semiconductor devices: small signal
Application: automotive industry
Quantity in set/package: 3000pcs.
на замовлення 3885 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 6.01 грн |
| 115+ | 3.53 грн |
| 500+ | 3.11 грн |
| 3000+ | 2.93 грн |
| VS-10BQ100-M3/5BT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Max. forward impulse current: 38A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
на замовлення 1384 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.17 грн |
| 23+ | 17.61 грн |
| 25+ | 16.36 грн |
| 50+ | 13.45 грн |
| 100+ | 12.19 грн |
| 500+ | 9.12 грн |
| 1000+ | 7.78 грн |
| 1300+ | 7.39 грн |
| VS-10BQ100HM3/5BT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. forward impulse current: 780A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Capacitance: 65pF
Application: automotive industry
на замовлення 3225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.18 грн |
| 20+ | 19.82 грн |
| 100+ | 13.05 грн |
| 500+ | 10.07 грн |
| 1000+ | 9.67 грн |
| SI2307BDS-T1-E3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI2307CDS-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4272 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.88 грн |
| 14+ | 29.09 грн |
| 50+ | 20.92 грн |
| 100+ | 18.01 грн |
| 500+ | 12.66 грн |
| 1000+ | 10.85 грн |
| 1500+ | 9.91 грн |
| 3000+ | 9.67 грн |
| SMAJ15A-E3/61 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
на замовлення 3484 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.55 грн |
| 41+ | 9.59 грн |
| 100+ | 7.55 грн |
| 250+ | 6.21 грн |
| 500+ | 5.08 грн |
| 1000+ | 4.01 грн |
| 1800+ | 3.64 грн |
| IRFP240PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
на замовлення 1399 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 138.88 грн |
| 5+ | 97.51 грн |
| 10+ | 81.78 грн |
| 25+ | 75.49 грн |
| 50+ | 72.34 грн |
| 100+ | 69.99 грн |
| 250+ | 67.63 грн |
| 500+ | 66.05 грн |
| 1000+ | 64.48 грн |
| T63XB103KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63XB
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63XB
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 242.20 грн |
| 3+ | 206.81 грн |
| 5+ | 195.80 грн |
| 10+ | 180.86 грн |
| 20+ | 165.92 грн |
| T63YB103KT20 |
![]() |
Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63YB
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63YB
на замовлення 919 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.13 грн |
| 25+ | 136.04 грн |
| 50+ | 128.96 грн |
| 100+ | 121.10 грн |
| 200+ | 119.53 грн |
| T93XB103KT20 |
![]() |
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XB
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Z; 67Z; 3296Z
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93XB
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Z; 67Z; 3296Z
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
на замовлення 878 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.93 грн |
| 10+ | 69.20 грн |
| 50+ | 64.48 грн |
| 100+ | 62.12 грн |
| T93YB103KT20 |
![]() |
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1.5Ncm
Operating temperature: -55...125°C
Operating voltage: 250V
на замовлення 4568 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.55 грн |
| 10+ | 84.14 грн |
| 25+ | 77.85 грн |
| 50+ | 73.92 грн |
| 100+ | 69.99 грн |
| 200+ | 66.05 грн |
| 500+ | 61.34 грн |
| 1000+ | 58.19 грн |
| 1N5400-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 423.42 грн |
| VS-36MT60 |
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Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.19V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1039.92 грн |
| 5+ | 846.11 грн |
| SIHB12N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHB12N60ET1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHF12N60E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP12N60E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BZX55C13-TAP | ![]() |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 14920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 120+ | 3.77 грн |
| 230+ | 1.77 грн |
| 500+ | 1.42 грн |
| 700+ | 1.33 грн |
| 1920+ | 1.25 грн |
| 10000+ | 1.20 грн |
| IRFP22N50APBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 330.27 грн |
| IRFP244PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Mounting: THT
Polarisation: unipolar
Gate charge: 63nC
On-state resistance: 0.28Ω
Power dissipation: 150W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Case: TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Mounting: THT
Polarisation: unipolar
Gate charge: 63nC
On-state resistance: 0.28Ω
Power dissipation: 150W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 250V
Case: TO247AC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
на замовлення 214 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 178.68 грн |
| 5+ | 141.54 грн |
| 10+ | 130.53 грн |
| 25+ | 117.95 грн |
| 50+ | 111.66 грн |
| 100+ | 106.16 грн |
| 125+ | 104.58 грн |
| IRFP250PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.14µC
Kind of package: tube
на замовлення 429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 175.30 грн |
| 5+ | 150.98 грн |
| 10+ | 143.90 грн |
| 25+ | 135.25 грн |
| IRFP254PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 92A
на замовлення 407 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 213.40 грн |
| 10+ | 164.35 грн |
| 25+ | 151.77 грн |
| 50+ | 141.54 грн |
| 100+ | 132.11 грн |
| 125+ | 128.96 грн |
| 250+ | 118.74 грн |
| IRFP260PBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 486 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.71 грн |
| 25+ | 176.14 грн |
| 50+ | 166.71 грн |
| 100+ | 158.06 грн |
| IRFP264PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 401.40 грн |
| 10+ | 253.99 грн |
| 25+ | 230.40 грн |
| 50+ | 216.25 грн |
| 100+ | 203.66 грн |
| 125+ | 198.95 грн |
| 1.5KE6.8CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 549 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.41 грн |
| 14+ | 29.33 грн |
| 100+ | 22.57 грн |
| 500+ | 18.87 грн |
| SS34-E3/57T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Kind of package: 7 inch reel
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Kind of package: 7 inch reel
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 1567 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.25 грн |
| 100+ | 18.79 грн |
| 250+ | 15.73 грн |
| 500+ | 13.05 грн |
| 850+ | 10.85 грн |
| SS34-E3/9AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Kind of package: 13 inch reel
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Leakage current: 20mA
Max. forward voltage: 0.5V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Kind of package: 13 inch reel
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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| MBR20100CT-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
на замовлення 538 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.76 грн |
| 6+ | 73.92 грн |
| 10+ | 69.20 грн |
| 25+ | 61.34 грн |
| 50+ | 56.62 грн |
| 100+ | 51.90 грн |
| IHLP5050CEER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 30.4mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 7A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 30.4mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 7A
Tolerance: ±20%
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| IHLP5050CEER1R0M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 3.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 3.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Tolerance: ±20%
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| IHLP5050CEER1R5M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1.5µH
Resistance: 5.1mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 19A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1.5µH
Resistance: 5.1mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 19A
Tolerance: ±20%
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.29 грн |
| 500+ | 38.45 грн |
| IHLP5050CEER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 7.2mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 7.2mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Tolerance: ±20%
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| IHLP5050CEER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 11mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 11mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Tolerance: ±20%
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| IHLP5050CEER4R7M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 14.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 14.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Tolerance: ±20%
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| IHLP5050CEER5R6M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 5.6µH
Resistance: 18.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 5.6µH
Resistance: 18.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Tolerance: ±20%
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| IHLP5050CEER6R8M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 19.8mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 19.8mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Tolerance: ±20%
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| IHLP5050CEERR47M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
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| IHLP5050CEERR68M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
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| IHLP5050EZER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
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| IHLP5050EZER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
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| IHLP5050EZER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
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| IHLP5050EZER4R7M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
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| IHLP5050EZER6R8M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
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| IHLP5050FDER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 16.4mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 10A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 16.4mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 10A
Tolerance: ±20%
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| IHLP5050FDER1R0M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 1.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 1.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Tolerance: ±20%
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| IHLP5050FDER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 3.5mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 3.5mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Tolerance: ±20%
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| IHLP5050FDER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 5.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 5.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Tolerance: ±20%
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| 2N7002-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 109 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.32 грн |
| 57+ | 7.00 грн |
| 100+ | 4.95 грн |
| 2N7002K-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
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| 2N7002K-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 4931 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.40 грн |
| 39+ | 10.22 грн |
| 44+ | 9.04 грн |
| 57+ | 6.98 грн |
| 100+ | 6.30 грн |
| 500+ | 4.99 грн |
| 3000+ | 3.88 грн |
| SIHB15N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHF15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SF1600-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Type of diode: rectifying
Case: SOD57
Semiconductor structure: single diode
Reverse recovery time: 75ns
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward voltage: 3.4V
Load current: 1A
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Max. off-state voltage: 1.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Type of diode: rectifying
Case: SOD57
Semiconductor structure: single diode
Reverse recovery time: 75ns
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward voltage: 3.4V
Load current: 1A
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Max. off-state voltage: 1.6kV
на замовлення 1865 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.10 грн |
| 19+ | 21.31 грн |
| 100+ | 18.95 грн |
| SS16-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
на замовлення 6936 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.47 грн |
| 63+ | 6.29 грн |
| 70+ | 5.63 грн |
| 100+ | 5.35 грн |
| 500+ | 4.70 грн |
| 1000+ | 4.43 грн |
| 2500+ | 4.06 грн |
| 5000+ | 3.78 грн |
| SS16-E3/61T | ![]() |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 8891 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.55 грн |
| 36+ | 11.17 грн |
| 39+ | 10.30 грн |
| 50+ | 8.19 грн |
| 100+ | 7.27 грн |
| 500+ | 5.11 грн |
| 1000+ | 4.18 грн |
| 1300+ | 3.84 грн |
| 1800+ | 3.40 грн |
| SS16HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
на замовлення 7028 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.09 грн |
| 34+ | 11.72 грн |
| 38+ | 10.38 грн |
| 50+ | 9.36 грн |
| 100+ | 8.26 грн |
| 250+ | 6.92 грн |
| 500+ | 5.90 грн |
| 1000+ | 5.11 грн |























