| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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293D475X9025C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Mounting: SMD Case - inch: 2312 Case - mm: 6032 Operating temperature: -55...125°C Case: C Roll diameter max.: 178mm Manufacturer series: Tantamount |
на замовлення 2523 шт: термін постачання 21-30 дні (днів) |
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T63YB102KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 1kΩ; 250mW; ±10%; linear; T63YB Resistance: 1kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Track material: cermet Kind of potentiometer: multiturn IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: THT Terminal pitch: 2.5x2.5mm Torque: 1Ncm Potentiometer standard - inch: 1/4" Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Manufacturer series: T63YB |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
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1N4448TAP | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: Ammo Pack Power dissipation: 0.44W |
на замовлення 9674 шт: термін постачання 21-30 дні (днів) |
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1N4448TR | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Kind of package: 14 inch reel Power dissipation: 0.44W Quantity in set/package: 10000pcs. |
на замовлення 25803 шт: термін постачання 21-30 дні (днів) |
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1N4448W-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Power dissipation: 0.28W Kind of package: 7 inch reel Leakage current: 50µA Quantity in set/package: 3000pcs. |
на замовлення 2220 шт: термін постачання 21-30 дні (днів) |
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1N4448W-HE3-08 | VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 1.5pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Power dissipation: 0.28W Kind of package: 7 inch reel Leakage current: 50µA Application: automotive industry Quantity in set/package: 3000pcs. |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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| SIHA240N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHD240N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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293D476X0016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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293D476X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1411 Case - mm: 3528 Case: B Manufacturer series: Tantamount |
на замовлення 8079 шт: термін постачання 21-30 дні (днів) |
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293D476X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2312 Case - mm: 6032 Case: C Manufacturer series: Tantamount |
на замовлення 4612 шт: термін постачання 21-30 дні (днів) |
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293D476X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2312 Case - mm: 6032 Case: C Manufacturer series: Tantamount |
на замовлення 4638 шт: термін постачання 21-30 дні (днів) |
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293D476X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
на замовлення 2725 шт: термін постачання 21-30 дні (днів) |
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293D476X9020D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
на замовлення 1488 шт: термін постачання 21-30 дні (днів) |
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293D476X96R3B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 6.3V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1411 Case - mm: 3528 Case: B Manufacturer series: Tantamount |
на замовлення 787 шт: термін постачання 21-30 дні (днів) |
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293D477X96R3D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 470µF Operating voltage: 6.3V DC Mounting: SMD ESR value: 0.5Ω Tolerance: ±10% Operating temperature: -55...125°C Case: D Case - mm: 7343 Case - inch: 2917 Manufacturer series: 293D |
на замовлення 1482 шт: термін постачання 21-30 дні (днів) |
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293D477X96R3E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 470µF Operating voltage: 6.3V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case: E Case - mm: 7343 Case - inch: 2917 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ18CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 20.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
на замовлення 2361 шт: термін постачання 21-30 дні (днів) |
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1N5408-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD Mounting: THT Capacitance: 30pF Leakage current: 0.5mA Max. forward voltage: 1.2V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: 13 inch reel Quantity in set/package: 1400pcs. Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode |
на замовлення 5185 шт: термін постачання 21-30 дні (днів) |
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2W10G-E4/51 | VISHAY |
Category: Round single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward impulse current: 60A Max. forward voltage: 1.1V Load current: 2A Max. off-state voltage: 1kV Case: WOG Kind of package: bulk Features of semiconductor devices: glass passivated Version: round Leads: wire Ø 0.75mm |
на замовлення 1373 шт: термін постачання 21-30 дні (днів) |
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CRCW0805120RFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 120Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 38400 шт: термін постачання 21-30 дні (днів) |
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MAL214699111E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20% Type of capacitor: electrolytic Mounting: SMD Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -40...125°C Body dimensions: 16x16x21mm |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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MAL204831102E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C Terminal pitch: 7.5mm Body dimensions: Ø16x25mm Manufacturer series: MAL2048 |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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MAL204861102E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C Terminal pitch: 7.5mm Body dimensions: Ø16x25mm |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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GRC00JE1021H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x20mm Terminal pitch: 7.5mm |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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MAL215031102E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø16x25mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h |
на замовлення 214 шт: термін постачання 21-30 дні (днів) |
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ZRC00JG1021H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 16x25mm |
на замовлення 128 шт: термін постачання 21-30 дні (днів) |
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| SI7852DP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® SO8 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 41nC On-state resistance: 16.5mΩ Power dissipation: 1.2W Drain current: 7.6A Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SS26-E3/52T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs. Mounting: SMD Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 75A Max. off-state voltage: 60V Kind of package: 7 inch reel Quantity in set/package: 750pcs. Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode |
на замовлення 6618 шт: термін постачання 21-30 дні (днів) |
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SS26HE3_A/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs. Mounting: SMD Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 75A Max. off-state voltage: 60V Kind of package: 7 inch reel Quantity in set/package: 750pcs. Application: automotive industry Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode |
на замовлення 732 шт: термін постачання 21-30 дні (днів) |
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SS26S-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Leakage current: 10mA Max. forward voltage: 0.62V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Kind of package: 13 inch reel Quantity in set/package: 7500pcs. Case: SMA Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26S-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Leakage current: 10mA Max. forward voltage: 0.62V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Case: SMA Type of diode: Schottky rectifying Semiconductor structure: single diode |
на замовлення 1070 шт: термін постачання 21-30 дні (днів) |
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| SISS26DN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W Mounting: SMD Polarisation: unipolar Gate charge: 37nC On-state resistance: 7.8mΩ Power dissipation: 36W Gate-source voltage: ±20V Drain current: 60A Drain-source voltage: 60V Pulsed drain current: 150A Kind of package: reel; tape Case: PowerPAK® 1212-8 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: TrenchFET® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SISS26LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Mounting: SMD Polarisation: unipolar Gate charge: 48nC On-state resistance: 6.2mΩ Power dissipation: 36W Gate-source voltage: ±20V Drain current: 65A Drain-source voltage: 60V Pulsed drain current: 150A Kind of package: reel; tape Case: PowerPAK® 1212-8 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: TrenchFET® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSSS2600 | VISHAY |
Category: IR LEDsDescription: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT Type of diode: IR transmitter Wavelength: 950nm LED lens: transparent Radiant power: 2.6mW Viewing angle: 25° Operating voltage: 1.25...1.6V DC Mounting: THT Dimensions: 3.6x2.2x5mm LED current: 100mA LED version: angular |
на замовлення 1066 шт: термін постачання 21-30 дні (днів) |
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IRF840ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF840APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 133 шт: термін постачання 21-30 дні (днів) |
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IRF840ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 371 шт: термін постачання 21-30 дні (днів) |
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IRF840ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF840LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 708 шт: термін постачання 21-30 дні (днів) |
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IRF840SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IRF840STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS40-05-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.6A Kind of package: 7 inch reel Power dissipation: 0.2W Reverse recovery time: 5ns Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 1831 шт: термін постачання 21-30 дні (днів) |
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1.5KE27CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 1183 шт: термін постачання 21-30 дні (днів) |
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TCST2300 | VISHAY |
Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm Type of sensor: optocoupler Operation mode: through-beam (with slot) Slot width: 3.1mm Aperture width: 0.25mm Mounting: SMD; THT Body dimensions: 24.5x6.3x10.8mm Collector-emitter voltage: 70V Operating temperature: -55...85°C Kind of output: transistor Kind of optocoupler: slotted with flag Wavelength: 950nm Output current: 0.5mA |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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CRCW0805110RFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 110Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5822-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Quantity in set/package: 1400pcs. |
на замовлення 2556 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
на замовлення 9320 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: 10 inch reel Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns Quantity in set/package: 5000pcs. |
на замовлення 1214 шт: термін постачання 21-30 дні (днів) |
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BZX85C27-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 27V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 11598 шт: термін постачання 21-30 дні (днів) |
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1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1521 шт: термін постачання 21-30 дні (днів) |
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IRF740APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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IRF740ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
на замовлення 689 шт: термін постачання 21-30 дні (днів) |
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IRF740LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 39nC Kind of package: tube |
на замовлення 567 шт: термін постачання 21-30 дні (днів) |
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IRF740PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 63nC Kind of package: tube |
на замовлення 1106 шт: термін постачання 21-30 дні (днів) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: tube |
на замовлення 593 шт: термін постачання 21-30 дні (днів) |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 638 шт: термін постачання 21-30 дні (днів) |
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1.5KE180A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1530 шт: термін постачання 21-30 дні (днів) |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 1817 шт: термін постачання 21-30 дні (днів) |
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| 293D475X9025C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
на замовлення 2523 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.87 грн |
| 22+ | 18.64 грн |
| 50+ | 14.78 грн |
| 97+ | 9.59 грн |
| 267+ | 9.04 грн |
| T63YB102KT20 |
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Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1kΩ; 250mW; ±10%; linear; T63YB
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63YB
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1kΩ; 250mW; ±10%; linear; T63YB
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Terminal pitch: 2.5x2.5mm
Torque: 1Ncm
Potentiometer standard - inch: 1/4"
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Manufacturer series: T63YB
на замовлення 220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.10 грн |
| 7+ | 147.05 грн |
| 18+ | 138.40 грн |
| 1N4448TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.44W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Power dissipation: 0.44W
на замовлення 9674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.77 грн |
| 72+ | 5.50 грн |
| 79+ | 5.03 грн |
| 111+ | 3.55 грн |
| 500+ | 2.63 грн |
| 1000+ | 2.26 грн |
| 2000+ | 1.90 грн |
| 5000+ | 1.45 грн |
| 1N4448TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: 14 inch reel
Power dissipation: 0.44W
Quantity in set/package: 10000pcs.
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; 14 inch reel; Ifsm: 2A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Kind of package: 14 inch reel
Power dissipation: 0.44W
Quantity in set/package: 10000pcs.
на замовлення 25803 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.77 грн |
| 139+ | 2.83 грн |
| 500+ | 2.04 грн |
| 1000+ | 1.90 грн |
| 2000+ | 1.76 грн |
| 2500+ | 1.72 грн |
| 5000+ | 1.58 грн |
| 1N4448W-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.28W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.28W
Kind of package: 7 inch reel
Leakage current: 50µA
Quantity in set/package: 3000pcs.
на замовлення 2220 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.77 грн |
| 93+ | 4.25 грн |
| 117+ | 3.37 грн |
| 500+ | 2.82 грн |
| 1000+ | 2.60 грн |
| 1N4448W-HE3-08 |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.28W
Kind of package: 7 inch reel
Leakage current: 50µA
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 1.5pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.28W
Kind of package: 7 inch reel
Leakage current: 50µA
Application: automotive industry
Quantity in set/package: 3000pcs.
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 150+ | 3.06 грн |
| SIHA240N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHD240N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 293D476X0016D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 42.34 грн |
| 293D476X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
на замовлення 8079 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.33 грн |
| 26+ | 15.33 грн |
| 50+ | 12.66 грн |
| 100+ | 11.56 грн |
| 500+ | 9.04 грн |
| 1000+ | 7.94 грн |
| 2000+ | 7.71 грн |
| 293D476X9010C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
на замовлення 4612 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 22.86 грн |
| 27+ | 14.70 грн |
| 50+ | 11.87 грн |
| 100+ | 10.93 грн |
| 500+ | 9.12 грн |
| 1000+ | 8.57 грн |
| 293D476X9016C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
на замовлення 4638 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.10 грн |
| 26+ | 15.65 грн |
| 50+ | 14.00 грн |
| 100+ | 13.37 грн |
| 500+ | 12.11 грн |
| 1000+ | 11.64 грн |
| 1500+ | 11.40 грн |
| 2500+ | 11.01 грн |
| 293D476X9016D2TE3 | ![]() |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.33 грн |
| 19+ | 21.31 грн |
| 50+ | 17.06 грн |
| 100+ | 15.57 грн |
| 500+ | 12.82 грн |
| 1000+ | 11.95 грн |
| 1500+ | 11.48 грн |
| 2500+ | 11.24 грн |
| 293D476X9020D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
на замовлення 1488 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.65 грн |
| 15+ | 26.26 грн |
| 50+ | 20.76 грн |
| 100+ | 18.95 грн |
| 250+ | 17.06 грн |
| 500+ | 15.81 грн |
| 1000+ | 15.26 грн |
| 293D476X96R3B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
на замовлення 787 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.64 грн |
| 22+ | 18.01 грн |
| 50+ | 13.45 грн |
| 100+ | 11.87 грн |
| 250+ | 10.22 грн |
| 500+ | 9.12 грн |
| 293D477X96R3D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 470µF
Operating voltage: 6.3V DC
Mounting: SMD
ESR value: 0.5Ω
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - mm: 7343
Case - inch: 2917
Manufacturer series: 293D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 470µF
Operating voltage: 6.3V DC
Mounting: SMD
ESR value: 0.5Ω
Tolerance: ±10%
Operating temperature: -55...125°C
Case: D
Case - mm: 7343
Case - inch: 2917
Manufacturer series: 293D
на замовлення 1482 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.15 грн |
| 10+ | 70.77 грн |
| 500+ | 49.54 грн |
| 293D477X96R3E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - mm: 7343
Case - inch: 2917
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: E
Case - mm: 7343
Case - inch: 2917
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ18CA-E3/52 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20V; 20.5A; bidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 20.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
на замовлення 2361 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.71 грн |
| 26+ | 15.57 грн |
| 31+ | 12.97 грн |
| 100+ | 7.78 грн |
| 500+ | 6.45 грн |
| 750+ | 6.29 грн |
| 1500+ | 6.21 грн |
| 1N5408-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Mounting: THT
Capacitance: 30pF
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Mounting: THT
Capacitance: 30pF
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 5185 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.26 грн |
| 16+ | 25.32 грн |
| 50+ | 18.32 грн |
| 100+ | 15.81 грн |
| 500+ | 11.64 грн |
| 1000+ | 10.38 грн |
| 1400+ | 9.83 грн |
| 2800+ | 8.81 грн |
| 4200+ | 8.34 грн |
| 2W10G-E4/51 |
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Виробник: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Load current: 2A
Max. off-state voltage: 1kV
Case: WOG
Kind of package: bulk
Features of semiconductor devices: glass passivated
Version: round
Leads: wire Ø 0.75mm
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Load current: 2A
Max. off-state voltage: 1kV
Case: WOG
Kind of package: bulk
Features of semiconductor devices: glass passivated
Version: round
Leads: wire Ø 0.75mm
на замовлення 1373 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.75 грн |
| 10+ | 39.87 грн |
| 25+ | 32.32 грн |
| 100+ | 24.38 грн |
| 500+ | 18.95 грн |
| 1000+ | 17.46 грн |
| CRCW0805120RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 120Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 120Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 38400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.13 грн |
| 500+ | 1.09 грн |
| 1000+ | 0.68 грн |
| 5000+ | 0.35 грн |
| MAL214699111E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -40...125°C
Body dimensions: 16x16x21mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -40...125°C
Body dimensions: 16x16x21mm
на замовлення 117 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 314.18 грн |
| 5+ | 240.62 грн |
| 6+ | 178.50 грн |
| 15+ | 168.28 грн |
| 40+ | 162.77 грн |
| MAL204831102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Manufacturer series: MAL2048
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Manufacturer series: MAL2048
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 199.01 грн |
| 10+ | 143.12 грн |
| 11+ | 87.28 грн |
| 30+ | 82.57 грн |
| MAL204861102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Body dimensions: Ø16x25mm
на замовлення 353 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 256.59 грн |
| 10+ | 103.01 грн |
| 25+ | 97.51 грн |
| GRC00JE1021H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
на замовлення 175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 87.22 грн |
| 11+ | 35.86 грн |
| 50+ | 25.64 грн |
| 150+ | 21.55 грн |
| MAL215031102E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
на замовлення 214 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.58 грн |
| 10+ | 158.06 грн |
| 50+ | 128.18 грн |
| 100+ | 115.59 грн |
| ZRC00JG1021H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
на замовлення 128 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.07 грн |
| 10+ | 51.03 грн |
| 50+ | 39.79 грн |
| SI7852DP-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
товару немає в наявності
В кошику
од. на суму грн.
| SS26-E3/52T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 6618 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.56 грн |
| 23+ | 17.77 грн |
| 50+ | 12.74 грн |
| 100+ | 10.85 грн |
| 250+ | 8.65 грн |
| 500+ | 7.23 грн |
| 750+ | 6.53 грн |
| 1500+ | 6.13 грн |
| SS26HE3_A/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Application: automotive industry
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 750pcs.
Application: automotive industry
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 732 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 38.95 грн |
| 13+ | 30.67 грн |
| 15+ | 27.13 грн |
| 25+ | 22.25 грн |
| 100+ | 18.32 грн |
| SS26S-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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| SS26S-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Case: SMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
на замовлення 1070 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.63 грн |
| 30+ | 13.29 грн |
| 34+ | 11.80 грн |
| 50+ | 10.62 грн |
| SISS26DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
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| SISS26LDN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Kind of package: reel; tape
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
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| TSSS2600 |
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Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
на замовлення 1066 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 38.95 грн |
| 16+ | 25.79 грн |
| 25+ | 23.12 грн |
| 50+ | 21.23 грн |
| 100+ | 19.34 грн |
| 500+ | 15.18 грн |
| 1000+ | 14.00 грн |
| IRF840ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| IRF840APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 133 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 135.49 грн |
| 50+ | 73.92 грн |
| 100+ | 62.91 грн |
| IRF840ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 371 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.92 грн |
| 50+ | 75.49 грн |
| 100+ | 72.34 грн |
| 250+ | 66.84 грн |
| IRF840ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| IRF840LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 708 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.73 грн |
| 10+ | 84.93 грн |
| 25+ | 75.49 грн |
| 50+ | 69.99 грн |
| 100+ | 65.27 грн |
| 250+ | 60.55 грн |
| 500+ | 58.98 грн |
| IRF840SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.69 грн |
| 6+ | 77.06 грн |
| IRF840STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| BAS40-05-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 1831 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.01 грн |
| 57+ | 7.00 грн |
| 100+ | 3.99 грн |
| 500+ | 2.90 грн |
| 1000+ | 2.60 грн |
| 1.5KE27CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 1183 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.03 грн |
| 16+ | 24.85 грн |
| 100+ | 20.84 грн |
| 500+ | 18.95 грн |
| TCST2300 | ![]() |
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Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 0.25mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 0.5mA
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Type of sensor: optocoupler
Operation mode: through-beam (with slot)
Slot width: 3.1mm
Aperture width: 0.25mm
Mounting: SMD; THT
Body dimensions: 24.5x6.3x10.8mm
Collector-emitter voltage: 70V
Operating temperature: -55...85°C
Kind of output: transistor
Kind of optocoupler: slotted with flag
Wavelength: 950nm
Output current: 0.5mA
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.83 грн |
| 10+ | 65.27 грн |
| CRCW0805110RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 193 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| 1N5822-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
на замовлення 2556 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.17 грн |
| 29+ | 13.60 грн |
| 100+ | 11.24 грн |
| 500+ | 9.59 грн |
| 1000+ | 9.44 грн |
| BYV26C-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
на замовлення 9320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.87 грн |
| 15+ | 26.74 грн |
| 20+ | 24.46 грн |
| 100+ | 19.50 грн |
| 200+ | 17.69 грн |
| 500+ | 15.65 грн |
| 1000+ | 14.31 грн |
| 2000+ | 13.13 грн |
| 2500+ | 12.74 грн |
| BYV26C-TR | ![]() |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
на замовлення 1214 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.10 грн |
| 21+ | 19.34 грн |
| 25+ | 17.85 грн |
| 100+ | 16.04 грн |
| 250+ | 15.02 грн |
| 500+ | 14.78 грн |
| BZX85C27-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 11598 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.86 грн |
| 46+ | 8.65 грн |
| 54+ | 7.31 грн |
| 82+ | 4.83 грн |
| 100+ | 4.07 грн |
| 250+ | 3.37 грн |
| 500+ | 3.00 грн |
| 1000+ | 2.83 грн |
| 1.5KE400A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1521 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.10 грн |
| 18+ | 23.12 грн |
| 100+ | 20.45 грн |
| 250+ | 18.95 грн |
| 500+ | 18.01 грн |
| IRF740APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
на замовлення 152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.04 грн |
| 10+ | 103.80 грн |
| 50+ | 77.06 грн |
| 100+ | 69.99 грн |
| IRF740ASPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
на замовлення 689 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 176.99 грн |
| 10+ | 106.16 грн |
| 50+ | 76.28 грн |
| 100+ | 67.63 грн |
| 500+ | 63.69 грн |
| IRF740LCPBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
на замовлення 567 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 127.03 грн |
| 10+ | 101.44 грн |
| 25+ | 85.71 грн |
| 50+ | 71.56 грн |
| 100+ | 60.55 грн |
| 500+ | 56.62 грн |
| IRF740PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
на замовлення 1106 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.76 грн |
| 10+ | 73.13 грн |
| 40+ | 66.05 грн |
| 50+ | 65.27 грн |
| 100+ | 60.55 грн |
| 150+ | 58.98 грн |
| 200+ | 57.40 грн |
| 250+ | 55.83 грн |
| 500+ | 51.90 грн |
| IRF740SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
на замовлення 593 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.25 грн |
| 10+ | 92.79 грн |
| 50+ | 85.71 грн |
| 250+ | 79.42 грн |
| IRF740STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE18CA-E3/54 |
![]() |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 638 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.72 грн |
| 14+ | 28.94 грн |
| 25+ | 26.89 грн |
| 50+ | 25.16 грн |
| 100+ | 23.43 грн |
| 500+ | 19.34 грн |
| 1.5KE180A-E3/54 |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1530 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.26 грн |
| 14+ | 28.70 грн |
| 100+ | 22.10 грн |
| 250+ | 20.05 грн |
| 500+ | 18.87 грн |
| 1400+ | 17.30 грн |
| 1.5KE180CA-E3/54 |
![]() |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 1817 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.73 грн |
| 13+ | 32.00 грн |
| 100+ | 25.40 грн |
| 500+ | 21.39 грн |
| 1000+ | 19.82 грн |
| 1400+ | 19.03 грн |



























