| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BFC238320684 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 680nF; 630VDC; 220VAC; 31x25x15mm; THT Mounting: THT Capacitance: 0.68µF Climate class: 55/110/56 Type of capacitor: polypropylene Leads: 2pin Lead length: 3.5mm Terminal pitch: 27.5mm Body dimensions: 31x25x15mm Tolerance: ±5% Operating voltage: 220V AC; 630V DC |
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В кошику од. на суму грн. | |||||||||||||||||
| BFC238330104 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT Mounting: THT Capacitance: 0.1µF Climate class: 55/110/56 Type of capacitor: polypropylene Leads: 2pin Terminal pitch: 22.5mm Body dimensions: 26x19.5x10mm Tolerance: ±5% Operating voltage: 350V AC; 1kV DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BFC238330153 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT Type of capacitor: polypropylene Capacitance: 15nF Operating voltage: 350V AC; 1kV DC Tolerance: ±5% Mounting: THT Terminal pitch: 15mm Lead length: 3.5mm Body dimensions: 17.5x11x5mm Leads: 2pin Climate class: 55/110/56 |
на замовлення 142 шт: термін постачання 21-30 дні (днів) |
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| BFC238342222 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT Mounting: THT Capacitance: 2.2nF Climate class: 55/110/56 Type of capacitor: polypropylene Leads: 2pin Terminal pitch: 15mm Body dimensions: 17.5x11x5mm Tolerance: ±5% Operating voltage: 500V AC; 1.4kV DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BFC238370222 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT Mounting: THT Capacitance: 2.2nF Climate class: 55/110/56 Type of capacitor: polypropylene Leads: 2pin Terminal pitch: 22.5mm Body dimensions: 26x15.5x6mm Tolerance: ±5% Operating voltage: 900V AC; 2.5kV DC |
на замовлення 299 шт: термін постачання 21-30 дні (днів) |
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| IRL540SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRL540STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZG05C5V1-M3-08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: 7 inch reel Case: SMA Semiconductor structure: single diode Quantity in set/package: 1500pcs. Manufacturer series: BZG05C-M |
на замовлення 1551 шт: термін постачання 21-30 дні (днів) |
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TS53YJ103MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V Resistance: 10kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C Track material: cermet Kind of potentiometer: single turn IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: SMD Torque: 1.5Ncm Temperature coefficient: 100ppm/°C Operating voltage: 200V Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° Leads: YJ |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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CRCW12061M00FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; 200V; -55÷155°C Tolerance: ±1% Resistance: 1MΩ Operating temperature: -55...155°C Power: 0.25W Mounting: SMD Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
на замовлення 1093 шт: термін постачання 21-30 дні (днів) |
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1.5KE82CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 769 шт: термін постачання 21-30 дні (днів) |
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GRC00DD1021CTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 16V DC Terminal pitch: 5mm Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 10x16mm Service life: 2000h |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IRFP21N60LPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 84A Gate charge: 150nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRFP22N60KPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 88A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRFP26N60LPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 470W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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GBU4A-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 791 шт: термін постачання 21-30 дні (днів) |
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GBU4A-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 397 шт: термін постачання 21-30 дні (днів) |
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| IRF540STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF540STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AC03000001007JAC00 | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm Type of resistor: wire-wound Mounting: THT Resistance: 0.1Ω Power: 3W Tolerance: ±5% Operating temperature: -50...250°C Temperature coefficient: 80ppm/°C Leads: axial Resistor features: non-flammable Leads dimensions: Ø0.8x25mm Body dimensions: Ø4.8x13mm |
на замовлення 1517 шт: термін постачання 21-30 дні (днів) |
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GSC00AF2211VARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 8x10mm Manufacturer series: GSC Nominal life: 2000h Height: 10mm |
на замовлення 321 шт: термін постачання 21-30 дні (днів) |
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VJ0603A151JXBAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 10500 шт: термін постачання 21-30 дні (днів) |
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| VJ1111D100JXRAJ | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 1.5kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1111 Case - mm: 3028 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX55C3V0-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 19719 шт: термін постачання 21-30 дні (днів) |
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WSL2512R3300FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.33Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 1651 шт: термін постачання 21-30 дні (днів) |
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| IRF510STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRF830ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
на замовлення 939 шт: термін постачання 21-30 дні (днів) |
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| IRF830ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF830BPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF840LCLPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF840LCSPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF840STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF9530STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -48A Drain current: -8.2A Gate charge: 38nC On-state resistance: 0.3Ω Power dissipation: 88W Gate-source voltage: ±20V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF9530STRRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -48A Drain current: -8.2A Gate charge: 38nC On-state resistance: 0.3Ω Power dissipation: 88W Gate-source voltage: ±20V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRFB13N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SISS5808DN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® 1212-8 Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 24nC On-state resistance: 11mΩ Gate-source voltage: ±20V Power dissipation: 65.7W Drain current: 66.6A Drain-source voltage: 80V Pulsed drain current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX85C22-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 22V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 5906 шт: термін постачання 21-30 дні (днів) |
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IRF640PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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| IRF640STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ZSC00AG6811CARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 16V DC Body dimensions: Ø10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
на замовлення 1212 шт: термін постачання 21-30 дні (днів) |
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| IFSC1008ABER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm Mounting: SMD Resistance: 359mΩ Tolerance: ±20% Body dimensions: 2.5x2x1.2mm Operating temperature: -55...125°C Type of inductor: wire Inductance: 10µH Operating current: 0.9A Manufacturer series: IFSC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IFSC1008ABER1R0M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm Mounting: SMD Resistance: 37mΩ Tolerance: ±20% Body dimensions: 2.5x2x1.2mm Operating temperature: -55...125°C Type of inductor: wire Inductance: 1µH Operating current: 2.65A Manufacturer series: IFSC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GSC00AP4702GARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 47µF Operating voltage: 400V DC Tolerance: ±20% Operating temperature: -40...105°C Manufacturer series: GSC Height: 21.5mm Nominal life: 2000h Dimensions: 18x21.5mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
CRCW08057K50JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 7.5kΩ Power: 0.125W Tolerance: ±5% Operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 1200 шт: термін постачання 21-30 дні (днів) |
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MRS16000C3300FCT00 | VISHAY |
Category: THT ResistorsDescription: Resistor: thin film; THT; 330Ω; 400mW; ±1%; 200V; Ø0.5x29mm Mounting: THT Type of resistor: thin film Operating temperature: -55...155°C Tolerance: ±1% Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Power: 0.4W Operating voltage: 200V Temperature coefficient: 50ppm/°C Resistance: 330Ω |
на замовлення 2670 шт: термін постачання 21-30 дні (днів) |
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| IRF730APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| IRF730APBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| IRF730ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| IRF730ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRF730STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Pulsed drain current: 22A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
VJ0603A180JXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 18pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 3026 шт: термін постачання 21-30 дні (днів) |
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| MAL219367121E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 120µF Operating voltage: 450V DC Body dimensions: Ø25x30mm Terminal pitch: 10mm Tolerance: ±20% Service life: 5000h Operating temperature: -40...105°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
VJ0402V104ZXJCW2BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 16V Dielectric: Y5V Tolerance: -20...80% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -25...85°C Kind of capacitor: MLCC |
на замовлення 7562 шт: термін постачання 21-30 дні (днів) |
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| SI7852DP-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerPAK® SO8 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 41nC On-state resistance: 16.5mΩ Power dissipation: 1.2W Drain current: 7.6A Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 80V |
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В кошику од. на суму грн. | |||||||||||||||||
|
TSOP39438 | VISHAY |
Category: IR receiver modulesDescription: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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TSOP4138 | VISHAY |
Category: IR receiver modulesDescription: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° Connector variant: straight |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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TSOP4438 | VISHAY |
Category: IR receiver modulesDescription: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
на замовлення 351 шт: термін постачання 21-30 дні (днів) |
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| TSOP58338 | VISHAY |
Category: IR receiver modulesDescription: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 38kHz Mounting: THT Supply voltage: 2.5...5.5V Viewing angle: 45° |
товару немає в наявності |
В кошику од. на суму грн. |
| BFC238320684 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 220VAC; 31x25x15mm; THT
Mounting: THT
Capacitance: 0.68µF
Climate class: 55/110/56
Type of capacitor: polypropylene
Leads: 2pin
Lead length: 3.5mm
Terminal pitch: 27.5mm
Body dimensions: 31x25x15mm
Tolerance: ±5%
Operating voltage: 220V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 220VAC; 31x25x15mm; THT
Mounting: THT
Capacitance: 0.68µF
Climate class: 55/110/56
Type of capacitor: polypropylene
Leads: 2pin
Lead length: 3.5mm
Terminal pitch: 27.5mm
Body dimensions: 31x25x15mm
Tolerance: ±5%
Operating voltage: 220V AC; 630V DC
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| BFC238330104 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Capacitance: 0.1µF
Climate class: 55/110/56
Type of capacitor: polypropylene
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x19.5x10mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Capacitance: 0.1µF
Climate class: 55/110/56
Type of capacitor: polypropylene
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x19.5x10mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
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| BFC238330153 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Type of capacitor: polypropylene
Capacitance: 15nF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 15mm
Lead length: 3.5mm
Body dimensions: 17.5x11x5mm
Leads: 2pin
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Type of capacitor: polypropylene
Capacitance: 15nF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 15mm
Lead length: 3.5mm
Body dimensions: 17.5x11x5mm
Leads: 2pin
Climate class: 55/110/56
на замовлення 142 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.79 грн |
| 10+ | 78.64 грн |
| 21+ | 45.61 грн |
| 56+ | 43.25 грн |
| BFC238342222 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT
Mounting: THT
Capacitance: 2.2nF
Climate class: 55/110/56
Type of capacitor: polypropylene
Leads: 2pin
Terminal pitch: 15mm
Body dimensions: 17.5x11x5mm
Tolerance: ±5%
Operating voltage: 500V AC; 1.4kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT
Mounting: THT
Capacitance: 2.2nF
Climate class: 55/110/56
Type of capacitor: polypropylene
Leads: 2pin
Terminal pitch: 15mm
Body dimensions: 17.5x11x5mm
Tolerance: ±5%
Operating voltage: 500V AC; 1.4kV DC
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В кошику
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| BFC238370222 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT
Mounting: THT
Capacitance: 2.2nF
Climate class: 55/110/56
Type of capacitor: polypropylene
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x15.5x6mm
Tolerance: ±5%
Operating voltage: 900V AC; 2.5kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT
Mounting: THT
Capacitance: 2.2nF
Climate class: 55/110/56
Type of capacitor: polypropylene
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x15.5x6mm
Tolerance: ±5%
Operating voltage: 900V AC; 2.5kV DC
на замовлення 299 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.25 грн |
| 10+ | 78.64 грн |
| 17+ | 55.04 грн |
| 47+ | 51.90 грн |
| IRL540SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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| IRL540STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BZG05C5V1-M3-08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: 7 inch reel
Case: SMA
Semiconductor structure: single diode
Quantity in set/package: 1500pcs.
Manufacturer series: BZG05C-M
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: 7 inch reel
Case: SMA
Semiconductor structure: single diode
Quantity in set/package: 1500pcs.
Manufacturer series: BZG05C-M
на замовлення 1551 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.71 грн |
| 22+ | 17.93 грн |
| 26+ | 15.65 грн |
| 100+ | 9.36 грн |
| 500+ | 7.31 грн |
| TS53YJ103MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
на замовлення 189 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.58 грн |
| 10+ | 118.74 грн |
| 25+ | 103.80 грн |
| 50+ | 92.79 грн |
| 100+ | 83.35 грн |
| CRCW12061M00FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; 200V; -55÷155°C
Tolerance: ±1%
Resistance: 1MΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; 200V; -55÷155°C
Tolerance: ±1%
Resistance: 1MΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
на замовлення 1093 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.68 грн |
| 600+ | 0.70 грн |
| 1000+ | 0.50 грн |
| 1.5KE82CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 769 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.25 грн |
| 19+ | 21.62 грн |
| 100+ | 18.95 грн |
| 250+ | 17.38 грн |
| GRC00DD1021CTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
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од. на суму грн.
| IRFP21N60LPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Gate charge: 150nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Gate charge: 150nC
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| IRFP22N60KPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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| IRFP26N60LPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
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| GBU4A-E3/45 |
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Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 57.40 грн |
| 20+ | 51.11 грн |
| 100+ | 46.39 грн |
| GBU4A-E3/51 |
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Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 397 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.82 грн |
| 10+ | 80.21 грн |
| 50+ | 67.63 грн |
| 100+ | 62.91 грн |
| 250+ | 57.40 грн |
| IRF540STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
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| IRF540STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
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| AC03000001007JAC00 |
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Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Leads: axial
Resistor features: non-flammable
Leads dimensions: Ø0.8x25mm
Body dimensions: Ø4.8x13mm
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Leads: axial
Resistor features: non-flammable
Leads dimensions: Ø0.8x25mm
Body dimensions: Ø4.8x13mm
на замовлення 1517 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.04 грн |
| 13+ | 30.67 грн |
| 50+ | 23.67 грн |
| 100+ | 21.15 грн |
| 200+ | 19.03 грн |
| 500+ | 16.59 грн |
| 1000+ | 14.94 грн |
| 1500+ | 14.00 грн |
| GSC00AF2211VARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
на замовлення 321 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 18.38 грн |
| 50+ | 10.93 грн |
| 100+ | 8.34 грн |
| VJ0603A151JXBAC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 10500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.40 грн |
| 54+ | 7.31 грн |
| 71+ | 5.60 грн |
| 100+ | 5.04 грн |
| 1000+ | 3.70 грн |
| 2000+ | 3.42 грн |
| 4000+ | 3.17 грн |
| VJ1111D100JXRAJ |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
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| BZX55C3V0-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 19719 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 5.93 грн |
| 103+ | 3.85 грн |
| 122+ | 3.22 грн |
| 182+ | 2.16 грн |
| 1000+ | 1.55 грн |
| 5000+ | 1.42 грн |
| 10000+ | 1.38 грн |
| WSL2512R3300FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 1651 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.04 грн |
| IRF510STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
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| IRF830ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 939 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.07 грн |
| 10+ | 84.14 грн |
| 50+ | 74.70 грн |
| 100+ | 70.77 грн |
| 250+ | 66.05 грн |
| 500+ | 61.34 грн |
| IRF830ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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| IRF830ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF830BPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840ASTRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF840LCLPBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840LCSPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF9530STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
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| IRF9530STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
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| IRFB13N50APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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| SISS5808DN-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 65.7W
Drain current: 66.6A
Drain-source voltage: 80V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® 1212-8
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Power dissipation: 65.7W
Drain current: 66.6A
Drain-source voltage: 80V
Pulsed drain current: 150A
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| BZX85C22-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 5906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.86 грн |
| 48+ | 8.34 грн |
| 57+ | 7.00 грн |
| 100+ | 4.14 грн |
| 500+ | 3.07 грн |
| 1000+ | 2.78 грн |
| 5000+ | 2.77 грн |
| IRF640PBF-BE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
на замовлення 112 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.71 грн |
| 10+ | 77.06 грн |
| 25+ | 71.56 грн |
| 50+ | 67.63 грн |
| 100+ | 64.48 грн |
| IRF640STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
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| ZSC00AG6811CARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
на замовлення 1212 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.53 грн |
| 100+ | 12.35 грн |
| 500+ | 9.44 грн |
| 1000+ | 7.71 грн |
| IFSC1008ABER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 10µH
Operating current: 0.9A
Manufacturer series: IFSC
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 10µH
Operating current: 0.9A
Manufacturer series: IFSC
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| IFSC1008ABER1R0M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 1µH
Operating current: 2.65A
Manufacturer series: IFSC
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Type of inductor: wire
Inductance: 1µH
Operating current: 2.65A
Manufacturer series: IFSC
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| GSC00AP4702GARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
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| CRCW08057K50JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 7.5kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 7.5kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.81 грн |
| 500+ | 0.84 грн |
| 1000+ | 0.56 грн |
| MRS16000C3300FCT00 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; 200V; Ø0.5x29mm
Mounting: THT
Type of resistor: thin film
Operating temperature: -55...155°C
Tolerance: ±1%
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Power: 0.4W
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Resistance: 330Ω
Category: THT Resistors
Description: Resistor: thin film; THT; 330Ω; 400mW; ±1%; 200V; Ø0.5x29mm
Mounting: THT
Type of resistor: thin film
Operating temperature: -55...155°C
Tolerance: ±1%
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Power: 0.4W
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Resistance: 330Ω
на замовлення 2670 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 10.67 грн |
| 46+ | 8.56 грн |
| 58+ | 6.86 грн |
| 100+ | 4.95 грн |
| 339+ | 2.73 грн |
| 930+ | 2.58 грн |
| IRF730APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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| IRF730APBF-BE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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| IRF730ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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| IRF730ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 5.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF730STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Pulsed drain current: 22A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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| VJ0603A180JXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 18pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 18pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 3026 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 5.93 грн |
| 228+ | 1.73 грн |
| 336+ | 1.17 грн |
| 379+ | 1.04 грн |
| 500+ | 0.88 грн |
| 1000+ | 0.77 грн |
| 2000+ | 0.67 грн |
| MAL219367121E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 120uF; 450VDC; Ø25x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 120µF
Operating voltage: 450V DC
Body dimensions: Ø25x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -40...105°C
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| VJ0402V104ZXJCW2BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 16V; Y5V; -20÷80%; SMD; 0402
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: Y5V
Tolerance: -20...80%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -25...85°C
Kind of capacitor: MLCC
на замовлення 7562 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 0.91 грн |
| 1000+ | 0.43 грн |
| 5000+ | 0.37 грн |
| SI7852DP-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 16.5mΩ
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
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| TSOP39438 |
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Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.59 грн |
| 9+ | 46.71 грн |
| 10+ | 44.19 грн |
| 25+ | 41.28 грн |
| TSOP4138 |
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Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Connector variant: straight
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.66 грн |
| 12+ | 33.03 грн |
| 13+ | 31.38 грн |
| 25+ | 29.49 грн |
| 50+ | 28.07 грн |
| TSOP4438 |
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Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
Category: IR receiver modules
Description: Integrated IR receiver; 38kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 38kHz
Mounting: THT
Supply voltage: 2.5...5.5V
Viewing angle: 45°
на замовлення 351 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.68 грн |
| 10+ | 44.43 грн |
| 50+ | 36.17 грн |
| 90+ | 35.07 грн |
























