| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1.5KE120A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 9.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 505 шт: термін постачання 21-30 дні (днів) |
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IRFZ14PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.2A Power dissipation: 43W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
на замовлення 939 шт: термін постачання 21-30 дні (днів) |
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| VS-8EWF02S-M3 | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 200ns Leakage current: 3mA Max. forward voltage: 1.2V Load current: 8A Quantity in set/package: 75pcs. Max. forward impulse current: 150A Max. off-state voltage: 200V Kind of package: tube Case: DPAK Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DF10M-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM Features of semiconductor devices: glass passivated Kind of package: tube Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 1.1V Max. forward impulse current: 50A Load current: 1A Max. off-state voltage: 1kV Case: DFM |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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BAV21-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 250V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns Type of diode: switching Mounting: THT Max. off-state voltage: 250V Load current: 0.25A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 1.5pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: Ammo Pack Max. load current: 0.625A |
на замовлення 3918 шт: термін постачання 21-30 дні (днів) |
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IHLP2020BZER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 4.2A; 45.6mΩ; ±20%; IHLP; 5.18x5.18x2mm Type of inductor: wire Mounting: SMD Inductance: 2.2µH Operating current: 4.2A Resistance: 45.6mΩ Tolerance: ±20% Body dimensions: 5.18x5.18x2mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Operating temperature: -55...125°C Manufacturer series: IHLP |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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IRF644PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
на замовлення 647 шт: термін постачання 21-30 дні (днів) |
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IRF644SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
на замовлення 291 шт: термін постачання 21-30 дні (днів) |
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TSOP4840 | VISHAY |
Category: IR receiver modulesDescription: Integrated IR receiver; 40kHz; 4.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 40kHz Mounting: THT Supply voltage: 4.5...5.5V Viewing angle: 45° Connector variant: straight |
на замовлення 553 шт: термін постачання 21-30 дні (днів) |
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BPW77NB | VISHAY |
Category: PhototransistorsDescription: Phototransistor; TO18; THT; 850nm; 70V; 20°; Lens: transparent Type of photoelement: phototransistor Mounting: THT Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 20° LED lens: transparent Case: TO18 |
на замовлення 1860 шт: термін постачання 21-30 дні (днів) |
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BPW85B | VISHAY |
Category: PhototransistorsDescription: Phototransistor; T1; THT; 3mm; λp max: 850nm; 70V; 50° Case: T1 Mounting: THT Type of photoelement: phototransistor Wavelength of peak sensitivity: 850nm LED diameter: 3mm Viewing angle: 50° Collector-emitter voltage: 70V LED lens: transparent |
на замовлення 1037 шт: термін постачання 21-30 дні (днів) |
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BPW85C | VISHAY |
Category: PhototransistorsDescription: Phototransistor; T1; THT; 3mm; λp max: 850nm; 70V; 50° Type of photoelement: phototransistor Mounting: THT LED diameter: 3mm Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 70V Viewing angle: 50° LED lens: transparent Case: T1 |
на замовлення 3667 шт: термін постачання 21-30 дні (днів) |
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BZT52C5V1-E3-08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Kind of package: 7 inch reel Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52C Tolerance: ±5% Quantity in set/package: 3000pcs. |
на замовлення 1023 шт: термін постачання 21-30 дні (днів) |
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| ES2BHE3_A/I | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Mounting: SMD Features of semiconductor devices: glass passivated; ultrafast switching Type of diode: rectifying Semiconductor structure: single diode Capacitance: 18pF Reverse recovery time: 50ns Leakage current: 0.35mA Max. forward voltage: 0.9V Load current: 2A Quantity in set/package: 3200pcs. Max. forward impulse current: 50A Max. off-state voltage: 100V Case: DO214AA; SMB Kind of package: 13 inch reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DF08S-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.8kV Load current: 1A Case: DFS Kind of package: tube Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Max. forward voltage: 1.1V Max. forward impulse current: 50A Electrical mounting: SMT |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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DF08S-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.8kV Load current: 1A Case: DFS Kind of package: reel; tape Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Max. forward voltage: 1.1V Max. forward impulse current: 50A Electrical mounting: SMT |
на замовлення 534 шт: термін постачання 21-30 дні (днів) |
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CRCW040230K0FKTDBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; 50V; -55÷155°C Resistance: 30kΩ Mounting: SMD Operating temperature: -55...155°C Tolerance: ±1% Case - inch: 0402 Power: 62.5mW Temperature coefficient: 100ppm/°C Operating voltage: 50V Case - mm: 1005 Type of resistor: thick film |
на замовлення 10400 шт: термін постачання 21-30 дні (днів) |
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M24S4FF1000T30 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; 200V Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 100Ω Power: 0.4W Tolerance: ±1% Operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Length: 3.6mm Diameter: 1.5mm |
на замовлення 15775 шт: термін постачання 21-30 дні (днів) |
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IRLU014PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Power dissipation: 25W Case: IPAK; TO251 Mounting: THT Kind of channel: enhancement On-state resistance: 0.28Ω Gate-source voltage: ±10V Gate charge: 8.4nC Kind of package: tube |
на замовлення 2563 шт: термін постачання 21-30 дні (днів) |
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IRLU110PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Power dissipation: 25W Case: IPAK; TO251 Mounting: THT Kind of channel: enhancement Features of semiconductor devices: logic level On-state resistance: 0.54Ω Gate-source voltage: ±10V Pulsed drain current: 17A Gate charge: 6.1nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX55C7V5-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 14750 шт: термін постачання 21-30 дні (днів) |
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593D227X9010D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ Type of capacitor: tantalum Capacitance: 220µF Operating voltage: 10V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount ESR value: 125mΩ Kind of capacitor: low ESR |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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SMBJ30A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 5946 шт: термін постачання 21-30 дні (днів) |
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SIHA15N60E-E3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
на замовлення 477 шт: термін постачання 21-30 дні (днів) |
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| SIHB15N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF15N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SIHG15N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
на замовлення 157 шт: термін постачання 21-30 дні (днів) |
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| SIHP15N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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293D475X9035B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Tolerance: ±10% Mounting: SMD Case - inch: 1411 Case - mm: 3528 Manufacturer series: Tantamount Operating temperature: -55...125°C Case: B |
на замовлення 1276 шт: термін постачання 21-30 дні (днів) |
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293D475X9035C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C Mounting: SMD Type of capacitor: tantalum Operating temperature: -55...125°C Capacitance: 4.7µF Operating voltage: 35V DC Tolerance: ±10% Manufacturer series: Tantamount Case - inch: 2312 Case - mm: 6032 Case: C |
на замовлення 2628 шт: термін постачання 21-30 дні (днів) |
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293D475X9035D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 35V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 1925 шт: термін постачання 21-30 дні (днів) |
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BZX85C56-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 56V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 56V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 11137 шт: термін постачання 21-30 дні (днів) |
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1.5KE120CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 120V; 9.1A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 9.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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1.5KE12A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 12V; 89.8A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 89.8A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 5µA Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
на замовлення 1287 шт: термін постачання 21-30 дні (днів) |
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1.5KE12CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 12V; 89.8A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 89.8A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 1715 шт: термін постачання 21-30 дні (днів) |
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CRCW08052K40FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 2.4kΩ; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 2.4kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 3500 шт: термін постачання 21-30 дні (днів) |
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TS53YJ203MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 20kΩ; 250mW; SMD; ±20%; 200V Resistance: 20kΩ Power: 0.25W Tolerance: ±20% Operating voltage: 200V Temperature coefficient: 100ppm/°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: single turn Mounting: SMD Operating temperature: -55...155°C Body dimensions: 5x5x2.7mm Torque: 1.5Ncm Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° Leads: YJ Track material: cermet |
на замовлення 893 шт: термін постачання 21-30 дні (днів) |
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CRCW120620K0FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 20kΩ; 0.25W; ±1%; 200V; -55÷155°C Resistance: 20kΩ Power: 0.25W Mounting: SMD Tolerance: ±1% Operating temperature: -55...155°C Operating voltage: 200V Case - mm: 3216 Type of resistor: thick film Case - inch: 1206 |
на замовлення 12400 шт: термін постачання 21-30 дні (днів) |
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BFC237018105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polyester; 1uF; 40VAC; 63VDC; 5mm; ±10%; 6x11x7.2mm; THT Type of capacitor: polyester Capacitance: 1µF Operating voltage: 40V AC; 63V DC Terminal pitch: 5mm Tolerance: ±10% Body dimensions: 6x11x7.2mm Mounting: THT Lead length: 5mm Operating temperature: -55...85°C |
на замовлення 158 шт: термін постачання 21-30 дні (днів) |
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BFC237051332 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 3.3nF; 400VDC; 220VAC; THT; ±10%; 5mm Type of capacitor: polypropylene Capacitance: 3.3nF Operating voltage: 220V AC; 400V DC Tolerance: ±10% Body dimensions: 2.5x6.5x7.2mm Mounting: THT Terminal pitch: 5mm |
на замовлення 992 шт: термін постачання 21-30 дні (днів) |
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KBU6M-E4/51 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 250A; flat Case: KBU Max. forward voltage: 1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 1kV Max. forward impulse current: 250A Type of bridge rectifier: single-phase |
на замовлення 313 шт: термін постачання 21-30 дні (днів) |
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BYV26E-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 75ns |
на замовлення 4070 шт: термін постачання 21-30 дні (днів) |
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BYV26E-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 10 inch reel; Ifsm: 30A; SOD57; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: 10 inch reel Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 75ns Quantity in set/package: 5000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SIHB21N60EF-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 53A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 176mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BFC233990076 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20% Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 0.47µF Operating voltage: 310V AC; 800V DC Mounting: THT Tolerance: ±20% Terminal pitch: 27.5mm |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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T93YB204KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 200kΩ; 500mW; THT; ±10%; linear Resistance: 200kΩ Power: 0.5W Tolerance: ±10% Operating voltage: 250V Temperature coefficient: 100ppm/°C Characteristics: linear Type of potentiometer: mounting Mounting: THT Operating temperature: -55...125°C Body dimensions: 9.8x9.8x5mm Terminal pitch: 2.5x2.5mm Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y Manufacturer series: T93YB Track material: cermet Kind of potentiometer: multiturn IP rating: IP67 |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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BZX384C15-E3-08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; 7 inch reel; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: SOD323 Semiconductor structure: single diode Quantity in set/package: 3000pcs. |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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CRCW08051K00FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 1kΩ; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 20525 шт: термін постачання 21-30 дні (днів) |
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VS-50WQ10FN-M3 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 100V; 5.5A; tube; 75pcs. Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 100V Load current: 5.5A Semiconductor structure: single diode Max. forward voltage: 0.91V Kind of package: tube Quantity in set/package: 75pcs. Leakage current: 4mA Capacitance: 183pF Max. forward impulse current: 330A |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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TCRT5000 | VISHAY |
Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective Type of sensor: optocoupler Kind of optocoupler: reflective Kind of output: transistor Collector-emitter voltage: 32V |
на замовлення 4158 шт: термін постачання 21-30 дні (днів) |
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MAL215376101E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 100uF; 25VDC; 8x8x10mm; ±20%; 3000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 100µF Operating voltage: 25V DC Body dimensions: 8x8x10mm Tolerance: ±20% Operating temperature: -40...105°C Service life: 3000h |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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NTCLE100E3153JB0 | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 15kΩ; THT; 3740K; -40÷125°C; 500mW Type of sensor: NTC thermistor Resistance: 15kΩ Mounting: THT Material constant B: 3740K Power: 0.5W Operating temperature: -40...125°C |
на замовлення 1476 шт: термін постачання 21-30 дні (днів) |
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NTCS0805E3153JMT | VISHAY |
Category: SMD measurement NTC thermistorsDescription: NTC thermistor; 15kΩ; SMD; 0805; 3700K; ±5%; 210mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 15kΩ Mounting: SMD Case - inch: 0805 Material constant B: 3700K Tolerance: ±5% Power: 0.21W Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZG03C12-M3-08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 12V; SMD; 7 inch reel; DO214AC,SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: 7 inch reel Case: DO214AC; SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZG03C-M Quantity in set/package: 1500pcs. |
на замовлення 1818 шт: термін постачання 21-30 дні (днів) |
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IRF9640PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF9640SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRF9640STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRF9640STRRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
WSL2512R0100FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: power metal; sensing; SMD; 2512; 10mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 10mΩ Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 1184 шт: термін постачання 21-30 дні (днів) |
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WSL2512R0200FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: power metal; sensing; SMD; 2512; 20mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 20mΩ Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 1687 шт: термін постачання 21-30 дні (днів) |
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| 1.5KE120A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.98 грн |
| 14+ | 29.44 грн |
| 100+ | 22.06 грн |
| 250+ | 19.68 грн |
| 500+ | 18.12 грн |
| IRFZ14PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.2A; 43W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.2A
Power dissipation: 43W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 939 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.40 грн |
| 50+ | 31.08 грн |
| VS-8EWF02S-M3 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 200ns
Leakage current: 3mA
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 75pcs.
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Kind of package: tube
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 200ns
Leakage current: 3mA
Max. forward voltage: 1.2V
Load current: 8A
Quantity in set/package: 75pcs.
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Kind of package: tube
Case: DPAK
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| DF10M-E3/45 | ![]() |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Load current: 1A
Max. off-state voltage: 1kV
Case: DFM
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Load current: 1A
Max. off-state voltage: 1kV
Case: DFM
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.48 грн |
| BAV21-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 250V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: Ammo Pack
Max. load current: 0.625A
Category: THT universal diodes
Description: Diode: switching; THT; 250V; 0.25A; Ammo Pack; Ifsm: 1A; DO35; 50ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 1.5pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: Ammo Pack
Max. load current: 0.625A
на замовлення 3918 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.18 грн |
| 100+ | 4.10 грн |
| 120+ | 3.44 грн |
| 155+ | 2.66 грн |
| 182+ | 2.26 грн |
| 208+ | 1.98 грн |
| 500+ | 1.64 грн |
| 1000+ | 1.56 грн |
| IHLP2020BZER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 4.2A; 45.6mΩ; ±20%; IHLP; 5.18x5.18x2mm
Type of inductor: wire
Mounting: SMD
Inductance: 2.2µH
Operating current: 4.2A
Resistance: 45.6mΩ
Tolerance: ±20%
Body dimensions: 5.18x5.18x2mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 4.2A; 45.6mΩ; ±20%; IHLP; 5.18x5.18x2mm
Type of inductor: wire
Mounting: SMD
Inductance: 2.2µH
Operating current: 4.2A
Resistance: 45.6mΩ
Tolerance: ±20%
Body dimensions: 5.18x5.18x2mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Operating temperature: -55...125°C
Manufacturer series: IHLP
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.52 грн |
| 11+ | 38.30 грн |
| 25+ | 35.59 грн |
| IRF644PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 647 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.68 грн |
| 10+ | 75.45 грн |
| 50+ | 63.96 грн |
| 100+ | 59.86 грн |
| 250+ | 54.94 грн |
| 500+ | 50.84 грн |
| IRF644SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 291 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 216.37 грн |
| 50+ | 96.77 грн |
| TSOP4840 |
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Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 4.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Supply voltage: 4.5...5.5V
Viewing angle: 45°
Connector variant: straight
Category: IR receiver modules
Description: Integrated IR receiver; 40kHz; 4.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 40kHz
Mounting: THT
Supply voltage: 4.5...5.5V
Viewing angle: 45°
Connector variant: straight
на замовлення 553 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.74 грн |
| BPW77NB |
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Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; TO18; THT; 850nm; 70V; 20°; Lens: transparent
Type of photoelement: phototransistor
Mounting: THT
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 20°
LED lens: transparent
Case: TO18
Category: Phototransistors
Description: Phototransistor; TO18; THT; 850nm; 70V; 20°; Lens: transparent
Type of photoelement: phototransistor
Mounting: THT
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 20°
LED lens: transparent
Case: TO18
на замовлення 1860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 181.93 грн |
| 10+ | 136.13 грн |
| 25+ | 124.65 грн |
| 50+ | 118.91 грн |
| BPW85B |
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Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; T1; THT; 3mm; λp max: 850nm; 70V; 50°
Case: T1
Mounting: THT
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 850nm
LED diameter: 3mm
Viewing angle: 50°
Collector-emitter voltage: 70V
LED lens: transparent
Category: Phototransistors
Description: Phototransistor; T1; THT; 3mm; λp max: 850nm; 70V; 50°
Case: T1
Mounting: THT
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 850nm
LED diameter: 3mm
Viewing angle: 50°
Collector-emitter voltage: 70V
LED lens: transparent
на замовлення 1037 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.62 грн |
| 15+ | 28.62 грн |
| 25+ | 25.91 грн |
| 50+ | 23.86 грн |
| 100+ | 21.90 грн |
| 500+ | 17.63 грн |
| 1000+ | 15.91 грн |
| BPW85C |
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Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; T1; THT; 3mm; λp max: 850nm; 70V; 50°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Case: T1
Category: Phototransistors
Description: Phototransistor; T1; THT; 3mm; λp max: 850nm; 70V; 50°
Type of photoelement: phototransistor
Mounting: THT
LED diameter: 3mm
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 70V
Viewing angle: 50°
LED lens: transparent
Case: T1
на замовлення 3667 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.27 грн |
| 19+ | 22.06 грн |
| 25+ | 20.75 грн |
| 50+ | 19.76 грн |
| 100+ | 18.78 грн |
| 500+ | 16.48 грн |
| 1000+ | 15.58 грн |
| 2000+ | 14.60 грн |
| BZT52C5V1-E3-08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Tolerance: ±5%
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Tolerance: ±5%
Quantity in set/package: 3000pcs.
на замовлення 1023 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 70+ | 5.90 грн |
| 77+ | 5.33 грн |
| 126+ | 3.27 грн |
| 500+ | 2.37 грн |
| 1000+ | 2.10 грн |
| ES2BHE3_A/I |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Mounting: SMD
Features of semiconductor devices: glass passivated; ultrafast switching
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 18pF
Reverse recovery time: 50ns
Leakage current: 0.35mA
Max. forward voltage: 0.9V
Load current: 2A
Quantity in set/package: 3200pcs.
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Case: DO214AA; SMB
Kind of package: 13 inch reel
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Mounting: SMD
Features of semiconductor devices: glass passivated; ultrafast switching
Type of diode: rectifying
Semiconductor structure: single diode
Capacitance: 18pF
Reverse recovery time: 50ns
Leakage current: 0.35mA
Max. forward voltage: 0.9V
Load current: 2A
Quantity in set/package: 3200pcs.
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Case: DO214AA; SMB
Kind of package: 13 inch reel
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| DF08S-E3/45 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: tube
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: tube
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.39 грн |
| 16+ | 26.00 грн |
| 25+ | 23.37 грн |
| DF08S-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.8kV
Load current: 1A
Case: DFS
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Electrical mounting: SMT
на замовлення 534 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 62.70 грн |
| 11+ | 37.48 грн |
| 100+ | 25.83 грн |
| 500+ | 19.11 грн |
| CRCW040230K0FKTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Case - inch: 0402
Power: 62.5mW
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - mm: 1005
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 30kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Case - inch: 0402
Power: 62.5mW
Temperature coefficient: 100ppm/°C
Operating voltage: 50V
Case - mm: 1005
Type of resistor: thick film
на замовлення 10400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 1.01 грн |
| 1000+ | 0.41 грн |
| 10000+ | 0.23 грн |
| M24S4FF1000T30 |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; 200V
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 100Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Length: 3.6mm
Diameter: 1.5mm
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 100Ω; 0.4W; ±1%; 200V
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 100Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Length: 3.6mm
Diameter: 1.5mm
на замовлення 15775 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 6.04 грн |
| 150+ | 3.17 грн |
| 500+ | 1.71 грн |
| 1000+ | 1.39 грн |
| 3000+ | 1.22 грн |
| IRLU014PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Mounting: THT
Kind of channel: enhancement
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Gate charge: 8.4nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Mounting: THT
Kind of channel: enhancement
On-state resistance: 0.28Ω
Gate-source voltage: ±10V
Gate charge: 8.4nC
Kind of package: tube
на замовлення 2563 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 14+ | 30.83 грн |
| 75+ | 27.64 грн |
| IRLU110PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Power dissipation: 25W
Case: IPAK; TO251
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.54Ω
Gate-source voltage: ±10V
Pulsed drain current: 17A
Gate charge: 6.1nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Power dissipation: 25W
Case: IPAK; TO251
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 0.54Ω
Gate-source voltage: ±10V
Pulsed drain current: 17A
Gate charge: 6.1nC
Kind of package: tube
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| BZX55C7V5-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 14750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.59 грн |
| 200+ | 2.16 грн |
| 500+ | 1.72 грн |
| 2500+ | 1.60 грн |
| 593D227X9010D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Capacitance: 220µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 220uF; 10VDC; SMD; D; 2917; ±10%; 125mΩ
Type of capacitor: tantalum
Capacitance: 220µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 125mΩ
Kind of capacitor: low ESR
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 87.43 грн |
| 10+ | 58.72 грн |
| 30+ | 49.70 грн |
| SMBJ30A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 5946 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.01 грн |
| 37+ | 11.15 грн |
| 40+ | 10.33 грн |
| 50+ | 8.61 грн |
| 100+ | 7.87 грн |
| 250+ | 6.97 грн |
| 500+ | 6.31 грн |
| 750+ | 5.82 грн |
| 1500+ | 5.17 грн |
| SIHA15N60E-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 477 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 237.56 грн |
| 5+ | 177.95 грн |
| 10+ | 156.63 грн |
| 25+ | 131.21 грн |
| 50+ | 123.01 грн |
| SIHB15N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SIHF15N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHG15N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 157 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.54 грн |
| 5+ | 215.68 грн |
| 10+ | 192.71 грн |
| 25+ | 168.93 грн |
| SIHP15N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 293D475X9035B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Operating temperature: -55...125°C
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Manufacturer series: Tantamount
Operating temperature: -55...125°C
Case: B
на замовлення 1276 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.51 грн |
| 15+ | 29.19 грн |
| 17+ | 25.26 грн |
| 50+ | 18.45 грн |
| 100+ | 16.48 грн |
| 500+ | 13.53 грн |
| 1000+ | 12.71 грн |
| 293D475X9035C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Mounting: SMD
Type of capacitor: tantalum
Operating temperature: -55...125°C
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Case - inch: 2312
Case - mm: 6032
Case: C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; C; 2312; ±10%; -55÷125°C
Mounting: SMD
Type of capacitor: tantalum
Operating temperature: -55...125°C
Capacitance: 4.7µF
Operating voltage: 35V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Case - inch: 2312
Case - mm: 6032
Case: C
на замовлення 2628 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.44 грн |
| 24+ | 17.39 грн |
| 50+ | 14.68 грн |
| 100+ | 13.69 грн |
| 500+ | 11.89 грн |
| 1000+ | 11.40 грн |
| 293D475X9035D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 35V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 1925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.21 грн |
| 19+ | 22.55 грн |
| 50+ | 18.62 грн |
| 100+ | 16.98 грн |
| 500+ | 14.60 грн |
| BZX85C56-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 56V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 56V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 56V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 56V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 11137 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.95 грн |
| 74+ | 5.58 грн |
| 102+ | 4.05 грн |
| 116+ | 3.55 грн |
| 500+ | 2.78 грн |
| 1000+ | 2.56 грн |
| 10000+ | 2.18 грн |
| 1.5KE120CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 120V; 9.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 120V; 9.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.39 грн |
| 12+ | 34.61 грн |
| 1.5KE12A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 89.8A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 89.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 89.8A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 89.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
на замовлення 1287 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.09 грн |
| 15+ | 27.47 грн |
| 100+ | 20.83 грн |
| 250+ | 19.11 грн |
| 500+ | 18.12 грн |
| 1.5KE12CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 12V; 89.8A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 89.8A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 12V; 89.8A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 89.8A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 1715 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.34 грн |
| 12+ | 34.61 грн |
| 50+ | 29.93 грн |
| 100+ | 28.13 грн |
| 500+ | 23.70 грн |
| 1400+ | 20.91 грн |
| CRCW08052K40FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.4kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 2.4kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 2.4kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 2.4kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 3500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.21 грн |
| 500+ | 1.09 грн |
| 1000+ | 0.67 грн |
| TS53YJ203MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 20kΩ; 250mW; SMD; ±20%; 200V
Resistance: 20kΩ
Power: 0.25W
Tolerance: ±20%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: single turn
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 5x5x2.7mm
Torque: 1.5Ncm
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Track material: cermet
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 20kΩ; 250mW; SMD; ±20%; 200V
Resistance: 20kΩ
Power: 0.25W
Tolerance: ±20%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: single turn
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 5x5x2.7mm
Torque: 1.5Ncm
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Track material: cermet
на замовлення 893 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 131.59 грн |
| 10+ | 108.25 грн |
| 50+ | 98.41 грн |
| 100+ | 93.49 грн |
| 200+ | 89.39 грн |
| 250+ | 87.75 грн |
| 500+ | 83.65 грн |
| CRCW120620K0FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 20kΩ; 0.25W; ±1%; 200V; -55÷155°C
Resistance: 20kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Operating voltage: 200V
Case - mm: 3216
Type of resistor: thick film
Case - inch: 1206
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 20kΩ; 0.25W; ±1%; 200V; -55÷155°C
Resistance: 20kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±1%
Operating temperature: -55...155°C
Operating voltage: 200V
Case - mm: 3216
Type of resistor: thick film
Case - inch: 1206
на замовлення 12400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.46 грн |
| 500+ | 1.33 грн |
| 1000+ | 0.85 грн |
| 5000+ | 0.38 грн |
| BFC237018105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 1uF; 40VAC; 63VDC; 5mm; ±10%; 6x11x7.2mm; THT
Type of capacitor: polyester
Capacitance: 1µF
Operating voltage: 40V AC; 63V DC
Terminal pitch: 5mm
Tolerance: ±10%
Body dimensions: 6x11x7.2mm
Mounting: THT
Lead length: 5mm
Operating temperature: -55...85°C
Category: THT Film Capacitors
Description: Capacitor: polyester; 1uF; 40VAC; 63VDC; 5mm; ±10%; 6x11x7.2mm; THT
Type of capacitor: polyester
Capacitance: 1µF
Operating voltage: 40V AC; 63V DC
Terminal pitch: 5mm
Tolerance: ±10%
Body dimensions: 6x11x7.2mm
Mounting: THT
Lead length: 5mm
Operating temperature: -55...85°C
на замовлення 158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.04 грн |
| BFC237051332 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 3.3nF; 400VDC; 220VAC; THT; ±10%; 5mm
Type of capacitor: polypropylene
Capacitance: 3.3nF
Operating voltage: 220V AC; 400V DC
Tolerance: ±10%
Body dimensions: 2.5x6.5x7.2mm
Mounting: THT
Terminal pitch: 5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 3.3nF; 400VDC; 220VAC; THT; ±10%; 5mm
Type of capacitor: polypropylene
Capacitance: 3.3nF
Operating voltage: 220V AC; 400V DC
Tolerance: ±10%
Body dimensions: 2.5x6.5x7.2mm
Mounting: THT
Terminal pitch: 5mm
на замовлення 992 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.09 грн |
| 27+ | 15.25 грн |
| 50+ | 8.69 грн |
| 100+ | 7.71 грн |
| 250+ | 6.89 грн |
| 500+ | 6.31 грн |
| KBU6M-E4/51 |
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Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 250A; flat
Case: KBU
Max. forward voltage: 1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 250A
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 250A; flat
Case: KBU
Max. forward voltage: 1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 250A
Type of bridge rectifier: single-phase
на замовлення 313 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 309.10 грн |
| 10+ | 218.14 грн |
| 50+ | 189.43 грн |
| 100+ | 177.95 грн |
| 250+ | 164.01 грн |
| BYV26E-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 75ns
на замовлення 4070 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.68 грн |
| 18+ | 23.78 грн |
| 100+ | 19.76 грн |
| 250+ | 17.96 грн |
| 500+ | 16.89 грн |
| 1000+ | 15.58 грн |
| 2000+ | 14.43 грн |
| 2500+ | 14.02 грн |
| BYV26E-TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 10 inch reel; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 75ns
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 10 inch reel; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 75ns
Quantity in set/package: 5000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| SIHB21N60EF-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BFC233990076 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20%
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 0.47µF
Operating voltage: 310V AC; 800V DC
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20%
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 0.47µF
Operating voltage: 310V AC; 800V DC
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 132.47 грн |
| 10+ | 96.77 грн |
| T93YB204KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 200kΩ; 500mW; THT; ±10%; linear
Resistance: 200kΩ
Power: 0.5W
Tolerance: ±10%
Operating voltage: 250V
Temperature coefficient: 100ppm/°C
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 200kΩ; 500mW; THT; ±10%; linear
Resistance: 200kΩ
Power: 0.5W
Tolerance: ±10%
Operating voltage: 250V
Temperature coefficient: 100ppm/°C
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 145.72 грн |
| 10+ | 106.61 грн |
| 25+ | 93.49 грн |
| 50+ | 83.65 грн |
| 100+ | 74.63 грн |
| BZX384C15-E3-08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; 7 inch reel; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD323
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; 7 inch reel; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD323
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 76+ | 5.41 грн |
| 81+ | 4.92 грн |
| CRCW08051K00FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 20525 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.55 грн |
| 236+ | 1.74 грн |
| 291+ | 1.41 грн |
| 321+ | 1.28 грн |
| 500+ | 0.98 грн |
| 1000+ | 0.86 грн |
| 2500+ | 0.71 грн |
| 5000+ | 0.59 грн |
| 10000+ | 0.48 грн |
| VS-50WQ10FN-M3 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5.5A; tube; 75pcs.
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5.5A
Semiconductor structure: single diode
Max. forward voltage: 0.91V
Kind of package: tube
Quantity in set/package: 75pcs.
Leakage current: 4mA
Capacitance: 183pF
Max. forward impulse current: 330A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5.5A; tube; 75pcs.
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5.5A
Semiconductor structure: single diode
Max. forward voltage: 0.91V
Kind of package: tube
Quantity in set/package: 75pcs.
Leakage current: 4mA
Capacitance: 183pF
Max. forward impulse current: 330A
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.98 грн |
| TCRT5000 | ![]() |
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Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
на замовлення 4158 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.24 грн |
| 10+ | 54.78 грн |
| 25+ | 52.24 грн |
| 50+ | 50.27 грн |
| 100+ | 48.47 грн |
| 250+ | 45.92 грн |
| 500+ | 44.12 грн |
| MAL215376101E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 25VDC; 8x8x10mm; ±20%; 3000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 25V DC
Body dimensions: 8x8x10mm
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 3000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 100uF; 25VDC; 8x8x10mm; ±20%; 3000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 100µF
Operating voltage: 25V DC
Body dimensions: 8x8x10mm
Tolerance: ±20%
Operating temperature: -40...105°C
Service life: 3000h
на замовлення 408 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.22 грн |
| 10+ | 66.42 грн |
| 20+ | 57.40 грн |
| 50+ | 52.48 грн |
| NTCLE100E3153JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 15kΩ; THT; 3740K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 15kΩ
Mounting: THT
Material constant B: 3740K
Power: 0.5W
Operating temperature: -40...125°C
Category: THT measurement NTC thermistors
Description: NTC thermistor; 15kΩ; THT; 3740K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 15kΩ
Mounting: THT
Material constant B: 3740K
Power: 0.5W
Operating temperature: -40...125°C
на замовлення 1476 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.21 грн |
| 14+ | 31.00 грн |
| 25+ | 28.78 грн |
| 50+ | 26.57 грн |
| 100+ | 26.41 грн |
| NTCS0805E3153JMT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 15kΩ; SMD; 0805; 3700K; ±5%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 15kΩ
Mounting: SMD
Case - inch: 0805
Material constant B: 3700K
Tolerance: ±5%
Power: 0.21W
Operating temperature: -40...150°C
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 15kΩ; SMD; 0805; 3700K; ±5%; 210mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 15kΩ
Mounting: SMD
Case - inch: 0805
Material constant B: 3700K
Tolerance: ±5%
Power: 0.21W
Operating temperature: -40...150°C
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| BZG03C12-M3-08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; 7 inch reel; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: 7 inch reel
Case: DO214AC; SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
Quantity in set/package: 1500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; 7 inch reel; DO214AC,SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: 7 inch reel
Case: DO214AC; SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZG03C-M
Quantity in set/package: 1500pcs.
на замовлення 1818 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.91 грн |
| 16+ | 25.75 грн |
| 18+ | 23.62 грн |
| 100+ | 15.75 грн |
| 500+ | 11.07 грн |
| 1000+ | 9.35 грн |
| 1500+ | 8.45 грн |
| IRF9640PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF9640SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF9640STRLPBF | ![]() |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF9640STRRPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| WSL2512R0100FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 10mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 10mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 10mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 10mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 1184 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.51 грн |
| 21+ | 19.93 грн |
| 50+ | 16.65 грн |
| 100+ | 15.50 грн |
| 250+ | 14.93 грн |
| 500+ | 14.02 грн |
| 1000+ | 13.28 грн |
| WSL2512R0200FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 20mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 20mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 20mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 20mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 1687 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.43 грн |









































