| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PE30L0FL472KAB | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear Resistance: 4.7kΩ Power: 3W Tolerance: ±10% Operating voltage: 300V Temperature coefficient: 150ppm/°C IP rating: IP67 Shaft surface: smooth Characteristics: linear Type of potentiometer: shaft Kind of potentiometer: single turn Mounting: on panel Operating temperature: -55...125°C Shaft diameter: 6mm Thread length: 12mm Shaft length: 25mm Mechanical rotation angle: 300 ±5° Electrical rotation angle: 270 ±10° Min. insulation resistance: 1TΩ Leads: for soldering Track material: cermet Potentiometer features: for industrial use; for military use |
на замовлення 152 шт: термін постачання 21-30 дні (днів) |
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TS53YJ102MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear Resistance: 1kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: SMD Torque: 1.5Ncm Temperature coefficient: 100ppm/°C Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° Operating voltage: 200V Leads: YJ Track material: cermet Kind of potentiometer: single turn |
на замовлення 976 шт: термін постачання 21-30 дні (днів) |
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| IRF644STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF644STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SI2301CDS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MRS25000C2324FCT00 | VISHAY |
Category: THT ResistorsDescription: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm Mounting: THT Type of resistor: thin film Leads dimensions: Ø0.6x28mm Diameter: 2.5mm Body dimensions: Ø2.5x6.5mm Length: 6.5mm Power: 0.6W Tolerance: ±1% Temperature coefficient: 50ppm/°C Operating voltage: 350V Resistance: 2.32MΩ |
на замовлення 9150 шт: термін постачання 21-30 дні (днів) |
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| IRL530STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 60A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF9540STRRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE130CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 111V Breakdown voltage: 130.5V Max. forward impulse current: 8.4A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 577 шт: термін постачання 21-30 дні (днів) |
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GRC00JE6821A00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 6.8mF Operating voltage: 10V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x20mm |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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| IRFR9024TRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFR1N60ATRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFR1N60ATRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFU1N60APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 36W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SIHFR1N60A-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 5.6A Gate charge: 14nC |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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| SI7850ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A Kind of package: reel; tape Kind of channel: enhancement Case: PowerPAK® SO8 Type of transistor: N-MOSFET Mounting: SMD Technology: TrenchFET® Gate charge: 17nC On-state resistance: 25mΩ Power dissipation: 35.7W Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SI7850DP-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A Kind of package: reel; tape Kind of channel: enhancement Case: PowerPAK® SO8 Type of transistor: N-MOSFET Mounting: SMD Technology: TrenchFET® Gate charge: 27nC On-state resistance: 22mΩ Power dissipation: 0.9W Drain current: 6.2A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRLR014PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 31A On-state resistance: 0.28Ω Gate charge: 8.4nC Gate-source voltage: ±10V |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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| IRLR014TRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Power dissipation: 25W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 31A On-state resistance: 0.28Ω Gate charge: 8.4nC Gate-source voltage: ±10V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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VJ1206A102JXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206 Operating temperature: -55...125°C Dielectric: C0G (NP0) Type of capacitor: ceramic Kind of capacitor: MLCC Mounting: SMD Capacitance: 1nF Tolerance: ±5% Operating voltage: 50V Case - inch: 1206 Case - mm: 3216 |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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CRCW0805620KJNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; 150V; -55÷155°C Case - mm: 2012 Mounting: SMD Type of resistor: thick film Operating temperature: -55...155°C Power: 0.125W Tolerance: ±5% Operating voltage: 150V Resistance: 620kΩ Case - inch: 0805 |
на замовлення 3500 шт: термін постачання 21-30 дні (днів) |
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CRCW0805620RFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 620Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
| IRF9610SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: -200V Pulsed drain current: -7A Drain current: -1A Gate charge: 11nC On-state resistance: 3Ω Power dissipation: 20W Gate-source voltage: ±20V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF9610STRRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1A Pulsed drain current: -7A Power dissipation: 20W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF9630STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -26A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF9640LPBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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M43P203KB40 | VISHAY |
Category: 19mm multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear Resistance: 20kΩ Power: 0.75W Tolerance: ±10% Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: multiturn Mounting: THT Operating temperature: -55...125°C Body dimensions: 19x6.4x4.8mm Terminal pitch: 12.7x2.54mm Potentiometer standard: 19mm Number of electrical turns: 15 Min. insulation resistance: 1GΩ Track material: cermet IP rating: IP67 |
на замовлення 234 шт: термін постачання 21-30 дні (днів) |
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| IRF9Z24STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.7A Pulsed drain current: -44A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhancement Gate charge: 19nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZX85C20-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 20V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 18131 шт: термін постачання 21-30 дні (днів) |
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BZX85C68-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 68V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 20370 шт: термін постачання 21-30 дні (днів) |
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VJ0402G104KXQCW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 10V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...85°C |
на замовлення 9953 шт: термін постачання 21-30 дні (днів) |
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| IRFP350LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MCT06030C1008FP500 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 75V; 180mm Type of resistor: thin film Case - inch: 0603 Case - mm: 1608 Resistance: 1Ω Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 50ppm/°C Mounting: SMD Operating temperature: -55...125°C; -55...155°C Roll diameter max.: 180mm Version: 0 Manufacturer series: MCT0603 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| IRF630STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF630STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Gate charge: 43nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF720SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.1A Pulsed drain current: 13A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 20nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTCS0805E3334JHT | VISHAY |
Category: SMD measurement NTC thermistorsDescription: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C Case - inch: 0805 Resistance: 0.33MΩ Power: 0.21W Tolerance: ±5% Operating temperature: -40...150°C Material constant B: 3930K Type of sensor: NTC thermistor Mounting: SMD |
на замовлення 414 шт: термін постачання 21-30 дні (днів) |
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NTCS0805E3474FXT | VISHAY |
Category: SMD measurement NTC thermistorsDescription: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C Case - inch: 0805 Resistance: 470kΩ Power: 0.21W Tolerance: ±1% Type of sensor: NTC thermistor Mounting: SMD Operating temperature: -40...150°C Material constant B: 4025K |
на замовлення 1647 шт: термін постачання 21-30 дні (днів) |
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| IRLR024PBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 56A On-state resistance: 0.14Ω Gate charge: 18nC Gate-source voltage: ±10V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRLR024TRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 56A On-state resistance: 0.14Ω Gate charge: 18nC Gate-source voltage: ±10V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRLR024TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 56A On-state resistance: 0.14Ω Gate charge: 18nC Gate-source voltage: ±10V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MAL215097601E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20% Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 25V DC Body dimensions: 10x10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
на замовлення 816 шт: термін постачання 21-30 дні (днів) |
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P6KE39A-E3/73 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: 7 inch reel Technology: TransZorb® Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
на замовлення 2217 шт: термін постачання 21-30 дні (днів) |
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PR02000201009JN300 | VISHAY |
Category: THT ResistorsDescription: Resistor: power metal; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x12mm; 250ppm/°C Mounting: THT Diameter: 3.9mm Length: 12mm Power: 2W Tolerance: ±5% Resistance: 10Ω Temperature coefficient: 250ppm/°C Operating voltage: 500V Leads: axial Resistor features: high power and small dimension Type of resistor: power metal Body dimensions: Ø3.9x12mm |
на замовлення 2290 шт: термін постачання 21-30 дні (днів) |
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PR02000201009JA100 | VISHAY |
Category: THT ResistorsDescription: Resistor: metal film; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x10mm; 250ppm/°C Mounting: THT Diameter: 3.9mm Length: 10mm Power: 2W Tolerance: ±5% Resistance: 10Ω Temperature coefficient: 250ppm/°C Operating voltage: 500V Leads: axial Resistor features: high power and small dimension Type of resistor: metal film Body dimensions: Ø3.9x10mm |
на замовлення 1585 шт: термін постачання 21-30 дні (днів) |
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TCMT1600 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V Case: Mini-flat 4pin Turn-on time: 6µs Number of channels: 1 Collector-emitter voltage: 70V CTR@If: 80-300%@5mA Insulation voltage: 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 5µs |
на замовлення 2906 шт: термін постачання 21-30 дні (днів) |
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TS63Y102KT20 | VISHAY |
Category: Multiturn SMD trimmersDescription: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD Resistance: 1kΩ Power: 0.25W Tolerance: ±10% Body dimensions: 6.85x6.85x5mm Operating temperature: -55...155°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: SMD Torque: 1.5Ncm Number of electrical turns: 13 ±2 Number of mechanical turns: 15 ±5 Temperature coefficient: 100ppm/°C Operating voltage: 250V Track material: cermet Kind of potentiometer: horizontal; multiturn |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WSL2512R1000FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.1Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 3611 шт: термін постачання 21-30 дні (днів) |
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WSL2512R1500FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.15Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 403 шт: термін постачання 21-30 дні (днів) |
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CNY17-3X009T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 4.3µs Manufacturer series: CNY17 |
на замовлення 425 шт: термін постачання 21-30 дні (днів) |
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BFC233620473 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm Type of capacitor: polypropylene Capacitance: 47nF Operating voltage: 310V AC; 630V DC Tolerance: ±20% Mounting: THT Terminal pitch: 15mm Body dimensions: 5x11x17.5mm Kind of capacitor: X2 Leads: 2pin Lead length: 3.5mm Climate class: 55/105/56 |
на замовлення 4028 шт: термін постачання 21-30 дні (днів) |
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| IRLZ34PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Power dissipation: 88W Case: TO220AB Mounting: THT Kind of channel: enhancement On-state resistance: 70mΩ Gate-source voltage: ±10V Pulsed drain current: 110A Gate charge: 35nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP10N40D-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 23A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BFC233868418 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; Y2; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm Type of capacitor: polypropylene Mounting: THT Kind of capacitor: Y2 Capacitance: 1nF Terminal pitch: 10mm Body dimensions: 12.5x4x10mm Tolerance: ±20% Operating voltage: 300V AC; 1kV DC |
на замовлення 1947 шт: термін постачання 21-30 дні (днів) |
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TDCG1060M | VISHAY |
Category: 7-segment LED displaysDescription: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd Operating voltage: 2...2.4V Mounting: THT Common electrode: cathode Colour: green Type of display: LED Wavelength: 562...575nm Luminosity: 2.8...4mcd Digit height: 10mm; 0.39" Operating current: 20mA Dimensions: 40.2x12.8x7mm Number of characters: 4 Kind of display: 7-segment |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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T18105KT10 | VISHAY |
Category: 19mm multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear Resistance: 1MΩ Power: 0.75W Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: THT Operating temperature: -55...125°C Potentiometer standard: 19mm Number of electrical turns: 15 ±1 Min. insulation resistance: 1TΩ Engineering PN: 43P; 89; 3006 Track material: cermet Kind of potentiometer: multiturn |
на замовлення 145 шт: термін постачання 21-30 дні (днів) |
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T93YB105KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear Resistance: 1MΩ Power: 0.5W Tolerance: ±10% Operating voltage: 250V Temperature coefficient: 100ppm/°C IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: THT Operating temperature: -55...125°C Body dimensions: 9.8x9.8x5mm Terminal pitch: 2.5x2.5mm Torque: 1.5Ncm Potentiometer standard - inch: 3/8" Number of electrical turns: 19 ±2 Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y Manufacturer series: T93YB Track material: cermet Kind of potentiometer: multiturn |
на замовлення 221 шт: термін постачання 21-30 дні (днів) |
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| SI2301BDS-T1-E3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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VJ0603A331GXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 330pF; 50V; C0G (NP0); ±2%; SMD; 0603 Type of capacitor: ceramic Capacitance: 0.33nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 3461 шт: термін постачання 21-30 дні (днів) |
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| IRFDC20PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.32A Pulsed drain current: 2.6A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| PE30L0FL472KAB |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Shaft surface: smooth
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Potentiometer features: for industrial use; for military use
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±10%
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Shaft surface: smooth
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: on panel
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Potentiometer features: for industrial use; for military use
на замовлення 152 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1741.76 грн |
| 5+ | 1367.47 грн |
| 10+ | 1299.54 грн |
| 20+ | 1272.05 грн |
| 50+ | 1263.96 грн |
| TS53YJ102MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Operating voltage: 200V
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Operating voltage: 200V
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
на замовлення 976 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 169.82 грн |
| 10+ | 131.81 грн |
| 50+ | 107.55 грн |
| 100+ | 97.85 грн |
| 200+ | 88.15 грн |
| 250+ | 86.53 грн |
| IRF644STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF644STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI2301CDS-T1-E3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
товару немає в наявності
В кошику
од. на суму грн.
| MRS25000C2324FCT00 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
Resistance: 2.32MΩ
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
Resistance: 2.32MΩ
на замовлення 9150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 18.55 грн |
| 100+ | 7.12 грн |
| 1000+ | 4.38 грн |
| 5000+ | 3.24 грн |
| IRL530STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF9540STRRPBF |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE130CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 130.5V; 8.4A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 577 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.38 грн |
| 11+ | 38.09 грн |
| 100+ | 26.28 грн |
| 500+ | 20.94 грн |
| GRC00JE6821A00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 6.8mF
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 6800uF; 10VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 6.8mF
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.40 грн |
| 14+ | 28.95 грн |
| 50+ | 20.14 грн |
| IRFR9024TRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRFR1N60ATRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
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| IRFR1N60ATRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
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| IRFU1N60APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 36W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
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| SIHFR1N60A-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 5.6A
Gate charge: 14nC
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.54 грн |
| 11+ | 36.88 грн |
| 20+ | 32.51 грн |
| 75+ | 29.11 грн |
| SI7850ADP-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 17nC
On-state resistance: 25mΩ
Power dissipation: 35.7W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 17nC
On-state resistance: 25mΩ
Power dissipation: 35.7W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
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| SI7850DP-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
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| IRLR014PBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.61 грн |
| 12+ | 35.42 грн |
| 20+ | 31.38 грн |
| IRLR014TRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.7A
Power dissipation: 25W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.28Ω
Gate charge: 8.4nC
Gate-source voltage: ±10V
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| VJ1206A102JXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.55 грн |
| CRCW0805620KJNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; 150V; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Resistance: 620kΩ
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620kΩ; 0.125W; ±5%; 150V; -55÷155°C
Case - mm: 2012
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Resistance: 620kΩ
Case - inch: 0805
на замовлення 3500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.86 грн |
| 500+ | 0.86 грн |
| 1000+ | 0.58 грн |
| CRCW0805620RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 620Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 620Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 620Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 99 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| IRF9610SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -7A
Drain current: -1A
Gate charge: 11nC
On-state resistance: 3Ω
Power dissipation: 20W
Gate-source voltage: ±20V
Kind of package: tube
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Pulsed drain current: -7A
Drain current: -1A
Gate charge: 11nC
On-state resistance: 3Ω
Power dissipation: 20W
Gate-source voltage: ±20V
Kind of package: tube
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| IRF9610STRRPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1A; Idm: -7A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1A
Pulsed drain current: -7A
Power dissipation: 20W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF9630STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -26A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; Idm: -26A; 74W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -26A
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| IRF9640LPBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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| M43P203KB40 |
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Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Terminal pitch: 12.7x2.54mm
Potentiometer standard: 19mm
Number of electrical turns: 15
Min. insulation resistance: 1GΩ
Track material: cermet
IP rating: IP67
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 19x6.4x4.8mm
Terminal pitch: 12.7x2.54mm
Potentiometer standard: 19mm
Number of electrical turns: 15
Min. insulation resistance: 1GΩ
Track material: cermet
IP rating: IP67
на замовлення 234 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 254.30 грн |
| 10+ | 203.79 грн |
| 25+ | 186.80 грн |
| 50+ | 175.48 грн |
| 100+ | 164.16 грн |
| 200+ | 153.65 грн |
| IRF9Z24STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.7A; Idm: -44A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.7A
Pulsed drain current: -44A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19nC
Kind of package: reel; tape
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| BZX85C20-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 20V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 20V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 18131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.29 грн |
| 35+ | 11.73 грн |
| 50+ | 8.31 грн |
| 100+ | 7.12 грн |
| 500+ | 4.97 грн |
| 1000+ | 4.27 грн |
| 2000+ | 3.66 грн |
| 5000+ | 3.00 грн |
| 10000+ | 2.98 грн |
| BZX85C68-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 68V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 68V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 20370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 8.10 грн |
| 110+ | 3.70 грн |
| 250+ | 3.31 грн |
| 1000+ | 3.01 грн |
| VJ0402G104KXQCW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 10V; X5R; ±10%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 10V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...85°C
на замовлення 9953 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 544+ | 0.80 грн |
| 962+ | 0.42 грн |
| 1725+ | 0.23 грн |
| IRFP350LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 64A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
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| MCT06030C1008FP500 |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 75V; 180mm
Type of resistor: thin film
Case - inch: 0603
Case - mm: 1608
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Mounting: SMD
Operating temperature: -55...125°C; -55...155°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 1Ω; 0.1W; ±1%; MCT0603; 0; 75V; 180mm
Type of resistor: thin film
Case - inch: 0603
Case - mm: 1608
Resistance: 1Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Mounting: SMD
Operating temperature: -55...125°C; -55...155°C
Roll diameter max.: 180mm
Version: 0
Manufacturer series: MCT0603
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| IRF630STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
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| IRF630STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 43nC
Kind of package: reel; tape
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| IRF720SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.1A
Pulsed drain current: 13A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 20nC
Kind of package: tube
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| NTCS0805E3334JHT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
на замовлення 414 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 32+ | 12.94 грн |
| 50+ | 11.81 грн |
| 100+ | 11.56 грн |
| NTCS0805E3474FXT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 470kΩ
Power: 0.21W
Tolerance: ±1%
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Material constant B: 4025K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 470kΩ; SMD; 0805; 4025K; ±1%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 470kΩ
Power: 0.21W
Tolerance: ±1%
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Material constant B: 4025K
на замовлення 1647 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.06 грн |
| 14+ | 30.49 грн |
| 500+ | 23.21 грн |
| 1000+ | 22.16 грн |
| IRLR024PBF | ![]() |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
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| IRLR024TRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
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| IRLR024TRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 56A
On-state resistance: 0.14Ω
Gate charge: 18nC
Gate-source voltage: ±10V
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| MAL215097601E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 25VDC; 10x10x10mm; ±20%
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 25V DC
Body dimensions: 10x10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
на замовлення 816 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 135.86 грн |
| 10+ | 80.06 грн |
| 50+ | 62.27 грн |
| 100+ | 57.42 грн |
| 500+ | 50.14 грн |
| P6KE39A-E3/73 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; DO15; 7 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 7 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
на замовлення 2217 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 25+ | 16.58 грн |
| 100+ | 12.86 грн |
| 500+ | 10.27 грн |
| 1000+ | 9.14 грн |
| 2000+ | 9.06 грн |
| PR02000201009JN300 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Diameter: 3.9mm
Length: 12mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: power metal
Body dimensions: Ø3.9x12mm
Category: THT Resistors
Description: Resistor: power metal; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x12mm; 250ppm/°C
Mounting: THT
Diameter: 3.9mm
Length: 12mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: power metal
Body dimensions: Ø3.9x12mm
на замовлення 2290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 100+ | 8.25 грн |
| 300+ | 7.36 грн |
| PR02000201009JA100 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x10mm; 250ppm/°C
Mounting: THT
Diameter: 3.9mm
Length: 10mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: metal film
Body dimensions: Ø3.9x10mm
Category: THT Resistors
Description: Resistor: metal film; THT; 10Ω; 2W; ±5%; 500V; Ø3.9x10mm; 250ppm/°C
Mounting: THT
Diameter: 3.9mm
Length: 10mm
Power: 2W
Tolerance: ±5%
Resistance: 10Ω
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Leads: axial
Resistor features: high power and small dimension
Type of resistor: metal film
Body dimensions: Ø3.9x10mm
на замовлення 1585 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 45+ | 9.06 грн |
| 52+ | 7.83 грн |
| 58+ | 7.04 грн |
| 100+ | 6.32 грн |
| 250+ | 5.47 грн |
| 500+ | 4.91 грн |
| 1000+ | 4.39 грн |
| TCMT1600 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: Mini-flat 4pin
Turn-on time: 6µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 80-300%@5mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Case: Mini-flat 4pin
Turn-on time: 6µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 80-300%@5mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5µs
на замовлення 2906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.29 грн |
| 13+ | 31.13 грн |
| 100+ | 22.64 грн |
| 500+ | 17.95 грн |
| 1000+ | 16.17 грн |
| TS63Y102KT20 |
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Виробник: VISHAY
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.85x6.85x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Track material: cermet
Kind of potentiometer: horizontal; multiturn
Category: Multiturn SMD trimmers
Description: Potentiometer: mounting; horizontal,multiturn; 1kΩ; 250mW; SMD
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±10%
Body dimensions: 6.85x6.85x5mm
Operating temperature: -55...155°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Number of electrical turns: 13 ±2
Number of mechanical turns: 15 ±5
Temperature coefficient: 100ppm/°C
Operating voltage: 250V
Track material: cermet
Kind of potentiometer: horizontal; multiturn
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 259.52 грн |
| 10+ | 174.67 грн |
| 50+ | 162.54 грн |
| 200+ | 152.03 грн |
| 500+ | 147.99 грн |
| WSL2512R1000FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 100mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.1Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 3611 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.09 грн |
| 18+ | 22.56 грн |
| 50+ | 16.42 грн |
| 100+ | 14.48 грн |
| 250+ | 12.62 грн |
| 500+ | 11.48 грн |
| 1000+ | 10.76 грн |
| 2000+ | 10.19 грн |
| WSL2512R1500FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.15Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 150mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.15Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 403 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.93 грн |
| CNY17-3X009T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
на замовлення 425 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.64 грн |
| 13+ | 33.24 грн |
| 50+ | 26.61 грн |
| 100+ | 24.10 грн |
| BFC233620473 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 15mm
Body dimensions: 5x11x17.5mm
Kind of capacitor: X2
Leads: 2pin
Lead length: 3.5mm
Climate class: 55/105/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Type of capacitor: polypropylene
Capacitance: 47nF
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 15mm
Body dimensions: 5x11x17.5mm
Kind of capacitor: X2
Leads: 2pin
Lead length: 3.5mm
Climate class: 55/105/56
на замовлення 4028 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.58 грн |
| 25+ | 16.82 грн |
| 50+ | 12.05 грн |
| 100+ | 10.67 грн |
| 500+ | 9.54 грн |
| 1000+ | 8.90 грн |
| 2000+ | 8.57 грн |
| IRLZ34PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 70mΩ
Gate-source voltage: ±10V
Pulsed drain current: 110A
Gate charge: 35nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 70mΩ
Gate-source voltage: ±10V
Pulsed drain current: 110A
Gate charge: 35nC
Kind of package: tube
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| SIHP10N40D-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 23A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 23A
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| BFC233868418 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm
Type of capacitor: polypropylene
Mounting: THT
Kind of capacitor: Y2
Capacitance: 1nF
Terminal pitch: 10mm
Body dimensions: 12.5x4x10mm
Tolerance: ±20%
Operating voltage: 300V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 1nF; 1kVDC; 300VAC; THT; ±20%; 10mm
Type of capacitor: polypropylene
Mounting: THT
Kind of capacitor: Y2
Capacitance: 1nF
Terminal pitch: 10mm
Body dimensions: 12.5x4x10mm
Tolerance: ±20%
Operating voltage: 300V AC; 1kV DC
на замовлення 1947 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.26 грн |
| 1400+ | 21.35 грн |
| TDCG1060M |
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Виробник: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Colour: green
Type of display: LED
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Digit height: 10mm; 0.39"
Operating current: 20mA
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Kind of display: 7-segment
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Colour: green
Type of display: LED
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Digit height: 10mm; 0.39"
Operating current: 20mA
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Kind of display: 7-segment
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 197.69 грн |
| 10+ | 136.67 грн |
| 48+ | 112.41 грн |
| T18105KT10 |
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Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Number of electrical turns: 15 ±1
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
Track material: cermet
Kind of potentiometer: multiturn
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Number of electrical turns: 15 ±1
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
Track material: cermet
Kind of potentiometer: multiturn
на замовлення 145 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.33 грн |
| 25+ | 130.20 грн |
| T93YB105KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Resistance: 1MΩ
Power: 0.5W
Tolerance: ±10%
Operating voltage: 250V
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 500mW; THT; ±10%; linear
Resistance: 1MΩ
Power: 0.5W
Tolerance: ±10%
Operating voltage: 250V
Temperature coefficient: 100ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Torque: 1.5Ncm
Potentiometer standard - inch: 3/8"
Number of electrical turns: 19 ±2
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
Manufacturer series: T93YB
Track material: cermet
Kind of potentiometer: multiturn
на замовлення 221 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.05 грн |
| 10+ | 83.29 грн |
| 50+ | 76.02 грн |
| SI2301BDS-T1-E3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
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| VJ0603A331GXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 330pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.33nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 330pF; 50V; C0G (NP0); ±2%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.33nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 3461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.71 грн |
| 143+ | 2.83 грн |
| 179+ | 2.26 грн |
| 196+ | 2.07 грн |
| 500+ | 1.72 грн |
| 1000+ | 1.60 грн |
| 2000+ | 1.50 грн |
| IRFDC20PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Pulsed drain current: 2.6A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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