| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G26093331002JLA000 | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; THT; 10kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm Operating temperature: -55...350°C Operating voltage: 500V Mounting: THT Type of resistor: wire-wound Body dimensions: Ø9.8x32.3mm Tolerance: ±5% Power: 13W Resistance: 10kΩ Quantity in set/package: 100pcs. |
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В кошику од. на суму грн. | |||||||||||
| G26093331801JLA000 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 1.8kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm Operating temperature: -55...350°C Operating voltage: 500V Mounting: THT Type of resistor: wire-wound Body dimensions: Ø9.8x32.3mm Tolerance: ±5% Power: 13W Resistance: 1.8kΩ Quantity in set/package: 100pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G26093332001JLA000 | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; THT; 2kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs. Operating temperature: -55...350°C Operating voltage: 500V Mounting: THT Type of resistor: wire-wound Body dimensions: Ø9.8x32.3mm Tolerance: ±5% Power: 13W Resistance: 2kΩ Quantity in set/package: 100pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| G26093332200JLA000 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 220Ω; 13W; ±5%; 500V; Ø9.8x32.3mm Operating temperature: -55...350°C Operating voltage: 500V Mounting: THT Type of resistor: wire-wound Body dimensions: Ø9.8x32.3mm Tolerance: ±5% Power: 13W Resistance: 220Ω Quantity in set/package: 100pcs. |
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В кошику од. на суму грн. | |||||||||||
| G26093332209JLA000 | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; THT; 22Ω; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs. Operating temperature: -55...350°C Operating voltage: 500V Mounting: THT Type of resistor: wire-wound Body dimensions: Ø9.8x32.3mm Tolerance: ±5% Power: 13W Resistance: 22Ω Quantity in set/package: 100pcs. |
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В кошику од. на суму грн. | |||||||||||
| G26093333300JLA000 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 330Ω; 13W; ±5%; 500V; Ø9.8x32.3mm Operating temperature: -55...350°C Operating voltage: 500V Mounting: THT Type of resistor: wire-wound Body dimensions: Ø9.8x32.3mm Tolerance: ±5% Power: 13W Resistance: 330Ω Quantity in set/package: 100pcs. |
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В кошику од. на суму грн. | |||||||||||
| G26093333901JLA000 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 3.9kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm Operating temperature: -55...350°C Operating voltage: 500V Mounting: THT Type of resistor: wire-wound Body dimensions: Ø9.8x32.3mm Tolerance: ±5% Power: 13W Resistance: 3.9kΩ Quantity in set/package: 100pcs. |
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В кошику од. на суму грн. | |||||||||||
| G26093333909JLA000 | VISHAY |
Category: Power resistors Description: Resistor: wire-wound; THT; 39Ω; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs. Operating temperature: -55...350°C Operating voltage: 500V Mounting: THT Type of resistor: wire-wound Body dimensions: Ø9.8x32.3mm Tolerance: ±5% Power: 13W Resistance: 39Ω Quantity in set/package: 100pcs. |
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В кошику од. на суму грн. | |||||||||||
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VOH1016AD | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; DIP6; 10kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 5kV Case: DIP6 Slew rate: 10kV/μs |
на замовлення 141 шт: термін постачання 21-30 дні (днів) |
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VOH1016AG-V | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; 400 mil,DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 5kV Case: 400 mil; DIP6 Conform to the norm: VDE Slew rate: 10kV/μs |
на замовлення 681 шт: термін постачання 21-30 дні (днів) |
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VOH1016AB-VT | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 5kV Case: SMD6 Slew rate: 10kV/μs Conform to the norm: VDE |
на замовлення 233 шт: термін постачання 21-30 дні (днів) |
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VOH1016AB-T2 | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 5kV Case: SMD6 Turn-on time: 250ns Turn-off time: 0.5µs Slew rate: 10kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VOH1016AB-VT2 | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 5kV Case: SMD6 Turn-on time: 250ns Turn-off time: 0.5µs Slew rate: 10kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VOH1016AD-V | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; DIP6; 10kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 5kV Case: DIP6 Conform to the norm: VDE Slew rate: 10kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VOH1016AG | VISHAY |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; 400 mil,DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 5kV Case: 400 mil; DIP6 Slew rate: 10kV/μs Turn-off time: 0.5µs Turn-on time: 250ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SIHP22N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
на замовлення 172 шт: термін постачання 21-30 дні (днів) |
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| SIHA22N60AE-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 49A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||
| SIHA22N60EF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIHB22N60AE-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: SMD Gate charge: 443nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||
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SIHB22N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SIHB22N60EF-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIHB22N60EL-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 45A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 197mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||
| SIHB22N60ET1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIHB22N60ET5-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SiHP22N60AE-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 49A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIHP22N60EF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIHG052N60EF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 148A Power dissipation: 278W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 101nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SIHP052N60EF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 148A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 101nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| T18222KT10 | VISHAY |
Category: 3/8 inch multiturn THT trimmersDescription: Potentiometer: mounting; 2.2kΩ; THT; ±10%; cermet; 19x6.4x5.3mm Type of potentiometer: mounting Resistance: 2.2kΩ Mounting: THT Tolerance: ±10% Track material: cermet Temperature coefficient: 100ppm/°C Body dimensions: 19x6.4x5.3mm Quantity in set/package: 25pcs. Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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TLHR4400 | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 1.6÷13mcd; 30°; Front: convex; 2÷3VDC; No.of term: 2 Type of diode: LED LED colour: red LED diameter: 3mm Luminosity: 1.6...13mcd Viewing angle: 30° Wavelength: 612...625nm LED lens: diffused LED current: 20mA Mounting: THT Front: convex Operating voltage: 2...3V DC Number of terminals: 2 Terminal pitch: 2.54mm |
на замовлення 3967 шт: термін постачання 21-30 дні (днів) |
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PR03000202209JAC00 | VISHAY |
Category: THT ResistorsDescription: Resistor: power metal; THT; 22Ω; 3W; ±5%; 750V; Ø5.2x19.5mm; axial Type of resistor: power metal Mounting: THT Resistance: 22Ω Power: 3W Tolerance: ±5% Operating voltage: 750V Temperature coefficient: 250ppm/°C Leads: axial Resistor features: high power and small dimension Body dimensions: Ø5.2x19.5mm Diameter: 5.2mm Length: 19.5mm |
на замовлення 365 шт: термін постачання 21-30 дні (днів) |
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| AC03000002209JACCS | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; THT; 22Ω; 3W; ±5%; Ø4.8x13mm; axial; L: 13mm Type of resistor: wire-wound Mounting: THT Resistance: 22Ω Power: 3W Tolerance: ±5% Conform to the norm: AEC-Q200 Leads: axial Body dimensions: Ø4.8x13mm Diameter: 4.8mm Length: 13mm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CRCW080582K0FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 82kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 5100 шт: термін постачання 21-30 дні (днів) |
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RCA080582K0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0805; 82kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 82kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
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В кошику од. на суму грн. | ||||||||||
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RCA080582K0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0805; 82kΩ; 125mW; ±5%; 150V; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 82kΩ Power: 0.125W Tolerance: ±5% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
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В кошику од. на суму грн. | ||||||||||
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CRCW080582K0FKEAHP | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 82kΩ; 500mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 82kΩ Power: 0.5W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Body dimensions: 2x1.25x0.5mm Roll diameter max.: 180mm Temperature coefficient: 100ppm/°C Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 |
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В кошику од. на суму грн. | ||||||||||
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CRCW080582K0JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±5%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 82kΩ Power: 0.125W Tolerance: ±5% Operating voltage: 150V Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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PR02000209101JA100 | VISHAY |
Category: THT ResistorsDescription: Resistor: power metal; THT; 9.1kΩ; 2W; ±5%; 500V; Ø3.9x12mm; axial Mounting: THT Resistor features: high power and small dimension Type of resistor: power metal Body dimensions: Ø3.9x12mm Power: 2W Tolerance: ±5% Temperature coefficient: 250ppm/°C Operating voltage: 500V Resistance: 9.1kΩ Leads: axial |
на замовлення 610 шт: термін постачання 21-30 дні (днів) |
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CRCW06039K10FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 9.1kΩ; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 9.1kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 34900 шт: термін постачання 21-30 дні (днів) |
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| SB140-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.48V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.48V Max. forward impulse current: 50A Leakage current: 10mA Kind of package: 13 inch reel |
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В кошику од. на суму грн. | |||||||||||
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VJ1812A472FXCTW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 4.7nF; 200V; C0G (NP0); ±1%; SMD; 1812 Type of capacitor: ceramic Capacitance: 4.7nF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
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В кошику од. на суму грн. | ||||||||||
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VJ1812A103GXATW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
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VJ1812A221KXGAT | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 220pF; 1kV; C0G (NP0); ±10%; SMD; 1812 Operating temperature: -55...125°C Dielectric: C0G (NP0) Type of capacitor: ceramic Mounting: SMD Capacitance: 220pF Tolerance: ±10% Operating voltage: 1kV Case - inch: 1812 Case - mm: 4532 |
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В кошику од. на суму грн. | ||||||||||
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VJ1812A472JXAAT | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 4.7nF; 50V; C0G (NP0); ±5%; SMD; 1812 Type of capacitor: ceramic Capacitance: 4.7nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
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В кошику од. на суму грн. | ||||||||||
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VJ1812A103GXAAT | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812 Type of capacitor: ceramic Capacitance: 10nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
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В кошику од. на суму грн. | ||||||||||
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VJ1812A123FXAAT | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 12nF; 50V; C0G (NP0); ±1%; SMD; 1812 Type of capacitor: ceramic Capacitance: 12nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
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В кошику од. на суму грн. | ||||||||||
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VJ1812A151JXHTW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 150pF; 3kV; C0G (NP0); ±5%; SMD; 1812 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 3kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VJ1812A183FXAAT | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 18nF; 50V; C0G (NP0); ±1%; SMD; 1812 Type of capacitor: ceramic Capacitance: 18nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
VJ1812A392GXCAT | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 3.9nF; 200V; C0G (NP0); ±2%; SMD; 1812 Type of capacitor: ceramic Capacitance: 3.9nF Operating voltage: 200V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
VJ1812A470JXHTW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 47pF; 3kV; C0G (NP0); ±5%; SMD; 1812 Type of capacitor: ceramic Capacitance: 47pF Operating voltage: 3kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MCT0603MD1623DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 162kΩ; 0.21W; ±0.5%; MCT0603; M; 75V Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 162kΩ Power: 0.21W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: M Operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 25ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 180mm |
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В кошику од. на суму грн. | |||||||||||
|
CRCW080513R0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 13Ω; 125mW; ±1%; 150V; 2x1.25x0.5mm Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 13Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Body dimensions: 2x1.25x0.5mm Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 180mm Quantity in set/package: 5000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
CRCW080584K5FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 84.5kΩ; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 84.5kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 150V Body dimensions: 2x1.25x0.45mm Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 180mm Quantity in set/package: 5000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| SI7454DDP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 21A; Idm: 40A; 19W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PowerPAK® SO8 Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 19.5nC On-state resistance: 33mΩ Power dissipation: 19W Drain current: 21A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SI7454DP-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PowerPAK® SO8 Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 30nC On-state resistance: 40mΩ Power dissipation: 4.8W Drain current: 7.8A Gate-source voltage: ±20V Pulsed drain current: 30A Drain-source voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SI7454DP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PowerPAK® SO8 Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 30nC On-state resistance: 40mΩ Power dissipation: 4.8W Drain current: 7.8A Gate-source voltage: ±20V Pulsed drain current: 30A Drain-source voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SI7454FDP-T1-RE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 23.5A; Idm: 40A Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PowerPAK® SO8 Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 26.5nC On-state resistance: 34mΩ Power dissipation: 39W Drain current: 23.5A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
UF4003-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; 13 inch reel; Ifsm: 30A; DO41; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Reverse recovery time: 50ns Leakage current: 50µA Capacitance: 17pF Quantity in set/package: 5500pcs. |
на замовлення 1090 шт: термін постачання 21-30 дні (днів) |
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|
RCWL1206R150JMEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 150mΩ; 250mW; ±5%; 3.2x1.6x0.55mm Type of resistor: thick film Mounting: SMD Case - inch: 1206 Resistance: 0.15Ω Power: 0.25W Tolerance: ±5% Body dimensions: 3.2x1.6x0.55mm Operating temperature: -55...155°C Temperature coefficient: 300ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 180mm Quantity in set/package: 5000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| VS-ETH1506FP-M3 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220FP-2; 29ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Reverse recovery time: 29ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220FP-2 Max. forward voltage: 2.45V Kind of package: tube Max. forward impulse current: 160A |
товару немає в наявності |
В кошику од. на суму грн. |
| G26093331002JLA000 |
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Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 10kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 10kΩ
Quantity in set/package: 100pcs.
Category: Power resistors
Description: Resistor: wire-wound; THT; 10kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 10kΩ
Quantity in set/package: 100pcs.
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| G26093331801JLA000 |
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 1.8kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 1.8kΩ
Quantity in set/package: 100pcs.
Category: Power resistors
Description: Resistor: wire-wound; THT; 1.8kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 1.8kΩ
Quantity in set/package: 100pcs.
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| G26093332001JLA000 |
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Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 2kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs.
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 2kΩ
Quantity in set/package: 100pcs.
Category: Power resistors
Description: Resistor: wire-wound; THT; 2kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs.
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 2kΩ
Quantity in set/package: 100pcs.
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| G26093332200JLA000 |
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 220Ω; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 220Ω
Quantity in set/package: 100pcs.
Category: Power resistors
Description: Resistor: wire-wound; THT; 220Ω; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 220Ω
Quantity in set/package: 100pcs.
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В кошику
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| G26093332209JLA000 |
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Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 22Ω; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs.
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 22Ω
Quantity in set/package: 100pcs.
Category: Power resistors
Description: Resistor: wire-wound; THT; 22Ω; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs.
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 22Ω
Quantity in set/package: 100pcs.
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| G26093333300JLA000 |
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 330Ω; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 330Ω
Quantity in set/package: 100pcs.
Category: Power resistors
Description: Resistor: wire-wound; THT; 330Ω; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 330Ω
Quantity in set/package: 100pcs.
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В кошику
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| G26093333901JLA000 |
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 3.9kΩ
Quantity in set/package: 100pcs.
Category: Power resistors
Description: Resistor: wire-wound; THT; 3.9kΩ; 13W; ±5%; 500V; Ø9.8x32.3mm
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 3.9kΩ
Quantity in set/package: 100pcs.
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| G26093333909JLA000 |
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs.
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 39Ω
Quantity in set/package: 100pcs.
Category: Power resistors
Description: Resistor: wire-wound; THT; 39Ω; 13W; ±5%; 500V; Ø9.8x32.3mm; 100pcs.
Operating temperature: -55...350°C
Operating voltage: 500V
Mounting: THT
Type of resistor: wire-wound
Body dimensions: Ø9.8x32.3mm
Tolerance: ±5%
Power: 13W
Resistance: 39Ω
Quantity in set/package: 100pcs.
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| VOH1016AD |
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Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; DIP6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: DIP6
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; DIP6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: DIP6
Slew rate: 10kV/μs
на замовлення 141 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.90 грн |
| 11+ | 40.11 грн |
| 25+ | 34.53 грн |
| 28+ | 34.45 грн |
| 76+ | 32.83 грн |
| VOH1016AG-V |
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Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; 400 mil,DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: 400 mil; DIP6
Conform to the norm: VDE
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; 400 mil,DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: 400 mil; DIP6
Conform to the norm: VDE
Slew rate: 10kV/μs
на замовлення 681 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.70 грн |
| 11+ | 38.82 грн |
| 25+ | 32.43 грн |
| VOH1016AB-VT |
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Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: SMD6
Slew rate: 10kV/μs
Conform to the norm: VDE
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: SMD6
Slew rate: 10kV/μs
Conform to the norm: VDE
на замовлення 233 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.28 грн |
| 10+ | 48.68 грн |
| 50+ | 40.11 грн |
| 100+ | 36.55 грн |
| VOH1016AB-T2 |
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Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: SMD6
Turn-on time: 250ns
Turn-off time: 0.5µs
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: SMD6
Turn-on time: 250ns
Turn-off time: 0.5µs
Slew rate: 10kV/μs
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од. на суму грн.
| VOH1016AB-VT2 |
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Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: SMD6
Turn-on time: 250ns
Turn-off time: 0.5µs
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Schmitt trigger; 5kV; SMD6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: SMD6
Turn-on time: 250ns
Turn-off time: 0.5µs
Slew rate: 10kV/μs
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| VOH1016AD-V |
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Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; DIP6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: DIP6
Conform to the norm: VDE
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; DIP6; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: DIP6
Conform to the norm: VDE
Slew rate: 10kV/μs
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од. на суму грн.
| VOH1016AG |
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Виробник: VISHAY
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; 400 mil,DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: 400 mil; DIP6
Slew rate: 10kV/μs
Turn-off time: 0.5µs
Turn-on time: 250ns
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 5kV; 400 mil,DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 5kV
Case: 400 mil; DIP6
Slew rate: 10kV/μs
Turn-off time: 0.5µs
Turn-on time: 250ns
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| SIHP22N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 172 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 328.32 грн |
| 5+ | 274.95 грн |
| 25+ | 242.60 грн |
| 100+ | 217.53 грн |
| SIHA22N60AE-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SIHA22N60EF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SIHB22N60AE-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB22N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB22N60EF-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB22N60EL-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB22N60ET1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHB22N60ET5-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SiHP22N60AE-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP22N60EF-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SIHG052N60EF-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP052N60EF-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 148A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 148A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 101nC
Kind of package: tube
Kind of channel: enhancement
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| T18222KT10 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 2.2kΩ; THT; ±10%; cermet; 19x6.4x5.3mm
Type of potentiometer: mounting
Resistance: 2.2kΩ
Mounting: THT
Tolerance: ±10%
Track material: cermet
Temperature coefficient: 100ppm/°C
Body dimensions: 19x6.4x5.3mm
Quantity in set/package: 25pcs.
Operating temperature: -55...125°C
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; 2.2kΩ; THT; ±10%; cermet; 19x6.4x5.3mm
Type of potentiometer: mounting
Resistance: 2.2kΩ
Mounting: THT
Tolerance: ±10%
Track material: cermet
Temperature coefficient: 100ppm/°C
Body dimensions: 19x6.4x5.3mm
Quantity in set/package: 25pcs.
Operating temperature: -55...125°C
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| TLHR4400 |
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Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 1.6÷13mcd; 30°; Front: convex; 2÷3VDC; No.of term: 2
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 1.6...13mcd
Viewing angle: 30°
Wavelength: 612...625nm
LED lens: diffused
LED current: 20mA
Mounting: THT
Front: convex
Operating voltage: 2...3V DC
Number of terminals: 2
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; red; 3mm; 1.6÷13mcd; 30°; Front: convex; 2÷3VDC; No.of term: 2
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 1.6...13mcd
Viewing angle: 30°
Wavelength: 612...625nm
LED lens: diffused
LED current: 20mA
Mounting: THT
Front: convex
Operating voltage: 2...3V DC
Number of terminals: 2
Terminal pitch: 2.54mm
на замовлення 3967 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.45 грн |
| 500+ | 7.84 грн |
| PR03000202209JAC00 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 22Ω; 3W; ±5%; 750V; Ø5.2x19.5mm; axial
Type of resistor: power metal
Mounting: THT
Resistance: 22Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 750V
Temperature coefficient: 250ppm/°C
Leads: axial
Resistor features: high power and small dimension
Body dimensions: Ø5.2x19.5mm
Diameter: 5.2mm
Length: 19.5mm
Category: THT Resistors
Description: Resistor: power metal; THT; 22Ω; 3W; ±5%; 750V; Ø5.2x19.5mm; axial
Type of resistor: power metal
Mounting: THT
Resistance: 22Ω
Power: 3W
Tolerance: ±5%
Operating voltage: 750V
Temperature coefficient: 250ppm/°C
Leads: axial
Resistor features: high power and small dimension
Body dimensions: Ø5.2x19.5mm
Diameter: 5.2mm
Length: 19.5mm
на замовлення 365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.30 грн |
| AC03000002209JACCS |
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Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 22Ω; 3W; ±5%; Ø4.8x13mm; axial; L: 13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 22Ω
Power: 3W
Tolerance: ±5%
Conform to the norm: AEC-Q200
Leads: axial
Body dimensions: Ø4.8x13mm
Diameter: 4.8mm
Length: 13mm
Category: Power resistors
Description: Resistor: wire-wound; THT; 22Ω; 3W; ±5%; Ø4.8x13mm; axial; L: 13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 22Ω
Power: 3W
Tolerance: ±5%
Conform to the norm: AEC-Q200
Leads: axial
Body dimensions: Ø4.8x13mm
Diameter: 4.8mm
Length: 13mm
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| CRCW080582K0FKTABC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 5100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 2.07 грн |
| 500+ | 1.02 грн |
| 1000+ | 0.62 грн |
| 4100+ | 0.24 грн |
| 5000+ | 0.22 грн |
| RCA080582K0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 82kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0805; 82kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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| RCA080582K0JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 82kΩ; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0805; 82kΩ; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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| CRCW080582K0FKEAHP |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 500mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.5W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.5mm
Roll diameter max.: 180mm
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 500mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.5W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.5mm
Roll diameter max.: 180mm
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
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| CRCW080582K0JNTABC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 82kΩ; 0.125W; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 82kΩ
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
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| PR02000209101JA100 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 9.1kΩ; 2W; ±5%; 500V; Ø3.9x12mm; axial
Mounting: THT
Resistor features: high power and small dimension
Type of resistor: power metal
Body dimensions: Ø3.9x12mm
Power: 2W
Tolerance: ±5%
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Resistance: 9.1kΩ
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 9.1kΩ; 2W; ±5%; 500V; Ø3.9x12mm; axial
Mounting: THT
Resistor features: high power and small dimension
Type of resistor: power metal
Body dimensions: Ø3.9x12mm
Power: 2W
Tolerance: ±5%
Temperature coefficient: 250ppm/°C
Operating voltage: 500V
Resistance: 9.1kΩ
Leads: axial
на замовлення 610 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 70+ | 7.23 грн |
| 100+ | 4.91 грн |
| 300+ | 3.80 грн |
| CRCW06039K10FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 9.1kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 9.1kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 9.1kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 9.1kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 34900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 1.05 грн |
| 1200+ | 0.34 грн |
| 1700+ | 0.25 грн |
| 5000+ | 0.11 грн |
| 24500+ | 0.10 грн |
| SB140-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.48V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Leakage current: 10mA
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.48V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.48V
Max. forward impulse current: 50A
Leakage current: 10mA
Kind of package: 13 inch reel
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| VJ1812A472FXCTW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 200V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 200V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| VJ1812A103GXATW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| VJ1812A221KXGAT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 1kV; C0G (NP0); ±10%; SMD; 1812
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 220pF
Tolerance: ±10%
Operating voltage: 1kV
Case - inch: 1812
Case - mm: 4532
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 1kV; C0G (NP0); ±10%; SMD; 1812
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 220pF
Tolerance: ±10%
Operating voltage: 1kV
Case - inch: 1812
Case - mm: 4532
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| VJ1812A472JXAAT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 50V; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7nF; 50V; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 4.7nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| VJ1812A103GXAAT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 10nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| VJ1812A123FXAAT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 12nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 12nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 12nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 12nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| VJ1812A151JXHTW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 3kV; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 3kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 3kV; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 3kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| VJ1812A183FXAAT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 18nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 18nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 18nF; 50V; C0G (NP0); ±1%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 18nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| VJ1812A392GXCAT |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 200V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 3.9nF; 200V; C0G (NP0); ±2%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 3.9nF
Operating voltage: 200V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| VJ1812A470JXHTW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47pF; 3kV; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 47pF
Operating voltage: 3kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 47pF; 3kV; C0G (NP0); ±5%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 47pF
Operating voltage: 3kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
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| MCT0603MD1623DP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 162kΩ; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 162kΩ
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 162kΩ; 0.21W; ±0.5%; MCT0603; M; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 162kΩ
Power: 0.21W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: M
Operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 25ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
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| CRCW080513R0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 13Ω; 125mW; ±1%; 150V; 2x1.25x0.5mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 13Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: 2x1.25x0.5mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 13Ω; 125mW; ±1%; 150V; 2x1.25x0.5mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 13Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: 2x1.25x0.5mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
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| CRCW080584K5FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 84.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 84.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 84.5kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 84.5kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Body dimensions: 2x1.25x0.45mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
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| SI7454DDP-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 21A; Idm: 40A; 19W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 33mΩ
Power dissipation: 19W
Drain current: 21A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 21A; Idm: 40A; 19W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 33mΩ
Power dissipation: 19W
Drain current: 21A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
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| SI7454DP-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 40mΩ
Power dissipation: 4.8W
Drain current: 7.8A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 40mΩ
Power dissipation: 4.8W
Drain current: 7.8A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 100V
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| SI7454DP-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 40mΩ
Power dissipation: 4.8W
Drain current: 7.8A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 7.8A; Idm: 30A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 30nC
On-state resistance: 40mΩ
Power dissipation: 4.8W
Drain current: 7.8A
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 100V
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| SI7454FDP-T1-RE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 23.5A; Idm: 40A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 26.5nC
On-state resistance: 34mΩ
Power dissipation: 39W
Drain current: 23.5A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 23.5A; Idm: 40A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PowerPAK® SO8
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 26.5nC
On-state resistance: 34mΩ
Power dissipation: 39W
Drain current: 23.5A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
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| UF4003-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; 13 inch reel; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 50µA
Capacitance: 17pF
Quantity in set/package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; 13 inch reel; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 50µA
Capacitance: 17pF
Quantity in set/package: 5500pcs.
на замовлення 1090 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.16 грн |
| 36+ | 11.48 грн |
| 100+ | 8.25 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.58 грн |
| RCWL1206R150JMEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 150mΩ; 250mW; ±5%; 3.2x1.6x0.55mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Resistance: 0.15Ω
Power: 0.25W
Tolerance: ±5%
Body dimensions: 3.2x1.6x0.55mm
Operating temperature: -55...155°C
Temperature coefficient: 300ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 150mΩ; 250mW; ±5%; 3.2x1.6x0.55mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Resistance: 0.15Ω
Power: 0.25W
Tolerance: ±5%
Body dimensions: 3.2x1.6x0.55mm
Operating temperature: -55...155°C
Temperature coefficient: 300ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
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| VS-ETH1506FP-M3 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220FP-2; 29ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 29ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FP-2
Max. forward voltage: 2.45V
Kind of package: tube
Max. forward impulse current: 160A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220FP-2; 29ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Reverse recovery time: 29ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FP-2
Max. forward voltage: 2.45V
Kind of package: tube
Max. forward impulse current: 160A
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