| Фото | Назва | Виробник | Інформація |
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VS-8ETH03STRL-M3 | VISHAY |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 0.83V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 8A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 0.83V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 1 шт |
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VS-8ETX06FP-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 110A; TO220FP; Ir: 500uA Kind of package: tube Reverse recovery time: 40ns Max. load current: 18A Max. forward voltage: 1.7V Max. forward impulse current: 110A Load current: 8A Max. off-state voltage: 600V Capacitance: 17pF Leakage current: 500µA Case: TO220FP Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Features of semiconductor devices: ultrafast switching |
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| VS-8EWF02S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Reverse recovery time: 200ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DPAK Max. forward voltage: 1.2V Max. forward impulse current: 150A Leakage current: 3mA Kind of package: tube кількість в упаковці: 1 шт |
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VS-8EWF06S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 200ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DPAK Max. forward voltage: 1.2V Max. forward impulse current: 150A Leakage current: 3mA Kind of package: tube кількість в упаковці: 1 шт |
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VS-8EWF10S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 8A; 80ns; DPAK; Ufmax: 1.3V; Ifsm: 150A Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 80ns Max. forward impulse current: 150A Case: DPAK Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 1kV Max. forward voltage: 1.3V Load current: 8A кількість в упаковці: 1 шт |
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| VS-8EWF12S-M3 | VISHAY |
VS-8EWF12S-M3 SMD universal diodes |
на замовлення 476 шт: термін постачання 7-14 дні (днів) |
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| VS-8EWH02FNTR-M3 | VISHAY |
VS-8EWH02FNTR-M3 SMD universal diodes |
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| VS-8EWL06FN-M3 | VISHAY |
VS-8EWL06FN-M3 SMD universal diodes |
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| VS-8EWL06FNTR-M3 | VISHAY |
VS-8EWL06FNTR-M3 SMD universal diodes |
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| VS-8EWS08STR-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A кількість в упаковці: 1 шт |
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| VS-8EWS08STRL-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A кількість в упаковці: 3000 шт |
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| VS-8EWS12S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube Case: DPAK Mounting: SMD Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: glass passivated; high voltage Leakage current: 0.5mA Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A кількість в упаковці: 1 шт |
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VS-8EWS16S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A Case: DPAK Mounting: SMD Semiconductor structure: single diode Max. off-state voltage: 1.6kV Features of semiconductor devices: glass passivated; high voltage Type of diode: rectifying Max. forward impulse current: 150A Max. forward voltage: 1.1V Load current: 8A кількість в упаковці: 1 шт |
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VS-8TQ060-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 8A; TO220-2; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.58V Case: TO220-2 Kind of package: tube Max. forward impulse current: 850A кількість в упаковці: 1 шт |
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VS-8TQ080-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 8A; TO220-2; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.58V Case: TO220-2 Kind of package: tube Max. forward impulse current: 850A кількість в упаковці: 1 шт |
на замовлення 3089 шт: термін постачання 7-14 дні (днів) |
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VS-8TQ080S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 80V; 8A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 80V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.58V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 850A кількість в упаковці: 1 шт |
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VS-8TQ080SHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 80V; 8A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 80V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.58V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 850A кількість в упаковці: 1 шт |
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VS-8TQ100-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220-2; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.58V Case: TO220-2 Kind of package: tube Max. forward impulse current: 850A кількість в упаковці: 1 шт |
на замовлення 664 шт: термін постачання 7-14 дні (днів) |
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VS-8TQ100S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 8A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.58V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 230A кількість в упаковці: 1 шт |
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VS-8TQ100SHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 8A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.58V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 850A кількість в упаковці: 1 шт |
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| VS-C06ET07T-M3 | VISHAY |
VS-C06ET07T-M3 THT Schottky diodes |
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| VS-C08ET07T-M3 | VISHAY |
VS-C08ET07T-M3 THT Schottky diodes |
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| VS-C10ET07T-M3 | VISHAY |
VS-C10ET07T-M3 THT Schottky diodes |
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| VS-C12ET07T-M3 | VISHAY | VS-C12ET07T-M3 THT Schottky diodes |
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| VS-C16CP07L-M3 | VISHAY |
VS-C16CP07L-M3 THT Schottky diodes |
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| VS-C16ET07T-M3 | VISHAY |
VS-C16ET07T-M3 THT Schottky diodes |
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| VS-C20CP07L-M3 | VISHAY |
VS-C20CP07L-M3 THT Schottky diodes |
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| VS-ETH1506-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220AC; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 12pF Kind of package: tube Max. forward impulse current: 160A Case: TO220AC Max. forward voltage: 1.6V Leakage current: 0.2mA Heatsink thickness: 1.14...1.4mm Reverse recovery time: 65ns кількість в упаковці: 1 шт |
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VS-ETH3006FP-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 27ns кількість в упаковці: 1 шт |
на замовлення 550 шт: термін постачання 7-14 дні (днів) |
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| VS-ETH3006S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 70ns; D2PAK; Ufmax: 1.8V; Ir: 300uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 70ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK Max. forward voltage: 1.8V Max. forward impulse current: 180A Leakage current: 0.3mA Kind of package: tube кількість в упаковці: 1 шт |
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| VS-ETL0806-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 6pF Kind of package: tube Max. forward impulse current: 120A Case: TO220AC Max. forward voltage: 0.9V Leakage current: 50µA Heatsink thickness: 1.14...1.4mm Reverse recovery time: 240ns кількість в упаковці: 1 шт |
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| VS-ETL1506-1-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; TO262AA; 290ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 12pF Kind of package: tube Max. forward impulse current: 200A Case: TO262AA Max. forward voltage: 0.91V Leakage current: 0.1mA Reverse recovery time: 290ns кількість в упаковці: 1 шт |
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VS-ETU1506-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220AC; 24ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 160A Case: TO220AC Max. forward voltage: 1.1V Heatsink thickness: 1.14...1.4mm Reverse recovery time: 24ns кількість в упаковці: 1 шт |
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| VS-ETU3006-1-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO262AA; 100ns Mounting: THT Case: TO262AA Max. off-state voltage: 0.6kV Max. forward voltage: 1.35V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 100ns Max. forward impulse current: 200A Leakage current: 0.25mA Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Capacitance: 20pF кількість в упаковці: 1 шт |
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| VS-ETU3006STRL-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK; Ufmax: 1.35V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK Max. forward voltage: 1.35V Max. forward impulse current: 200A Leakage current: 0.25mA Kind of package: reel; tape кількість в упаковці: 1 шт |
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| VS-ETX0806-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 6pF Kind of package: tube Max. forward impulse current: 80A Case: TO220AC Max. forward voltage: 2V Leakage current: 0.15mA Heatsink thickness: 1.14...1.4mm Reverse recovery time: 33ns кількість в упаковці: 1 шт |
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VS-ETX0806FP-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FP; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 6pF Kind of package: tube Max. forward impulse current: 80A Case: TO220FP Max. forward voltage: 2V Leakage current: 0.15mA Reverse recovery time: 33ns кількість в упаковці: 1 шт |
на замовлення 381 шт: термін постачання 7-14 дні (днів) |
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| VS-FA40SA50LC | VISHAY |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 40A; SOT227B; screw; Idm: 150A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 40A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 106mΩ Pulsed drain current: 150A Power dissipation: 543W Kind of channel: enhanced Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
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VS-FC270SA20 | VISHAY |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 270A; SOT227B; screw; Idm: 680A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 270A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 3.3mΩ Pulsed drain current: 680A Power dissipation: 937W Technology: ThunderFET Kind of channel: enhanced Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 160 шт |
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| VS-FC420SA15 | VISHAY |
VS-FC420SA15 Transistor modules MOSFET |
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| VS-GBPC2512W | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 25A Max. forward impulse current: 0.4kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.0mm Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1.1V кількість в упаковці: 1 шт |
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VS-GBPC3506W | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.0mm Features of semiconductor devices: glass passivated Kind of package: tube Max. forward voltage: 1.1V кількість в упаковці: 1 шт |
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| VS-GT100TS065N | VISHAY | VS-GT100TS065N IGBT modules |
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| VS-GT100TS065S | VISHAY | VS-GT100TS065S IGBT modules |
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| VS-GT150TS065S | VISHAY |
VS-GT150TS065S IGBT modules |
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VS-GT180DA120U | VISHAY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 185A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 185A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 390A Technology: Trench Features of semiconductor devices: integrated anti-parallel diode Mechanical mounting: screw кількість в упаковці: 1 шт |
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| VS-GT200TS065N | VISHAY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 144A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 144A Case: INT-A-Pak Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw кількість в упаковці: 1 шт |
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| VS-GT200TS065S | VISHAY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 378A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 378A Case: INT-A-Pak Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 810A Mechanical mounting: screw кількість в упаковці: 1 шт |
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VS-HFA04SD60S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 4A; 17ns; DPAK; Ufmax: 1.4V; Ifsm: 25A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 25A Case: DPAK Max. forward voltage: 1.4V Reverse recovery time: 17ns кількість в упаковці: 1 шт |
на замовлення 416 шт: термін постачання 7-14 дні (днів) |
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VS-HFA08PB120-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 130A; TO247AC; 28ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 130A Case: TO247AC Max. forward voltage: 2.4V Reverse recovery time: 28ns кількість в упаковці: 1 шт |
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| VS-HFA08SD60SL-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 90ns; DPAK; Ufmax: 1.7V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Max. load current: 24A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 25pF Kind of package: reel; tape Max. forward impulse current: 60A Case: DPAK Max. forward voltage: 1.7V Leakage current: 0.5mA Power dissipation: 14W Reverse recovery time: 90ns кількість в упаковці: 1 шт |
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VS-HFA08TA60C-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 4Ax2; tube; Ifsm: 25A; TO220AB; 17ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A x2 Max. load current: 8A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 25A Case: TO220AB Max. forward voltage: 1.4V Reverse recovery time: 17ns кількість в упаковці: 1 шт |
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| VS-HFA08TB120S-M3 | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK; Ufmax: 3.1V; Ir: 1mA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Max. load current: 32A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Kind of package: tube Max. forward impulse current: 130A Case: D2PAK Max. forward voltage: 3.1V Leakage current: 1mA Power dissipation: 29W Reverse recovery time: 160ns кількість в упаковці: 1 шт |
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VS-HFA08TB60-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; 14W; 18ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 60A Case: TO220AC Max. forward voltage: 1.4V Heatsink thickness: 1.14...1.4mm Power dissipation: 14W Reverse recovery time: 18ns кількість в упаковці: 1 шт |
на замовлення 1365 шт: термін постачання 7-14 дні (днів) |
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VS-HFA15PB60-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO247AC; Ir: 1mA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Max. load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 50pF Kind of package: tube Max. forward impulse current: 150A Case: TO247AC Max. forward voltage: 1.6V Leakage current: 1mA Power dissipation: 29W Reverse recovery time: 120ns кількість в упаковці: 1 шт |
товар відсутній |
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VS-HFA15TB60-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 23ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: TO220AC Max. forward voltage: 1.2V Heatsink thickness: 1.14...1.4mm Reverse recovery time: 23ns кількість в упаковці: 1 шт |
на замовлення 3308 шт: термін постачання 7-14 дні (днів) |
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VS-HFA16PB120-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 16A; tube; Ifsm: 190A; TO247AC; 60W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 16A Max. load current: 64A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 40pF Kind of package: tube Max. forward impulse current: 190A Case: TO247AC Max. forward voltage: 2.3V Power dissipation: 60W Reverse recovery time: 30ns кількість в упаковці: 1 шт |
на замовлення 257 шт: термін постачання 7-14 дні (днів) |
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VS-HFA16TA60C-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 60A; TO220AB; 14W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Max. load current: 24A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Capacitance: 25pF Kind of package: tube Max. forward impulse current: 60A Case: TO220AB Max. forward voltage: 1.7V Leakage current: 0.5mA Heatsink thickness: 1.14...1.4mm Power dissipation: 14W Reverse recovery time: 90ns кількість в упаковці: 1 шт |
товар відсутній |
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VS-HFA240NJ40CPBF | VISHAY |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 240A; TO244; screw Type of module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 0.4kV Load current: 240A Case: TO244 Max. forward voltage: 1.5V Max. forward impulse current: 0.9kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: ultrafast switching Technology: HEXFRED® Reverse recovery time: 50ns кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 7-14 дні (днів) |
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VS-HFA25TB60-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 25A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 55pF Kind of package: tube Max. forward impulse current: 225A Case: TO220AC Max. forward voltage: 1.3V Reverse recovery time: 23ns кількість в упаковці: 1 шт |
на замовлення 752 шт: термін постачання 7-14 дні (днів) |
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| VS-8ETH03STRL-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 0.83V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.83V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8A; 35ns; D2PAK; Ufmax: 0.83V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.83V
Max. forward impulse current: 100A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| VS-8ETX06FP-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 110A; TO220FP; Ir: 500uA
Kind of package: tube
Reverse recovery time: 40ns
Max. load current: 18A
Max. forward voltage: 1.7V
Max. forward impulse current: 110A
Load current: 8A
Max. off-state voltage: 600V
Capacitance: 17pF
Leakage current: 500µA
Case: TO220FP
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 110A; TO220FP; Ir: 500uA
Kind of package: tube
Reverse recovery time: 40ns
Max. load current: 18A
Max. forward voltage: 1.7V
Max. forward impulse current: 110A
Load current: 8A
Max. off-state voltage: 600V
Capacitance: 17pF
Leakage current: 500µA
Case: TO220FP
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Features of semiconductor devices: ultrafast switching
товар відсутній
| VS-8EWF02S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Reverse recovery time: 200ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Max. forward voltage: 1.2V
Max. forward impulse current: 150A
Leakage current: 3mA
Kind of package: tube
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Reverse recovery time: 200ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Max. forward voltage: 1.2V
Max. forward impulse current: 150A
Leakage current: 3mA
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| VS-8EWF06S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 200ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Max. forward voltage: 1.2V
Max. forward impulse current: 150A
Leakage current: 3mA
Kind of package: tube
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 200ns; DPAK; Ufmax: 1.2V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 200ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Max. forward voltage: 1.2V
Max. forward impulse current: 150A
Leakage current: 3mA
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| VS-8EWF10S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 80ns; DPAK; Ufmax: 1.3V; Ifsm: 150A
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 80ns
Max. forward impulse current: 150A
Case: DPAK
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 8A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 8A; 80ns; DPAK; Ufmax: 1.3V; Ifsm: 150A
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 80ns
Max. forward impulse current: 150A
Case: DPAK
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 1kV
Max. forward voltage: 1.3V
Load current: 8A
кількість в упаковці: 1 шт
товар відсутній
| VS-8EWF12S-M3 |
|
Виробник: VISHAY
VS-8EWF12S-M3 SMD universal diodes
VS-8EWF12S-M3 SMD universal diodes
на замовлення 476 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.82 грн |
| 15+ | 66.54 грн |
| 40+ | 63.25 грн |
| VS-8EWS08STR-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
кількість в упаковці: 1 шт
товар відсутній
| VS-8EWS08STRL-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
кількість в упаковці: 3000 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.8kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
кількість в упаковці: 3000 шт
товар відсутній
| VS-8EWS12S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: glass passivated; high voltage
Leakage current: 0.5mA
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
кількість в упаковці: 1 шт
товар відсутній
| VS-8EWS16S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Features of semiconductor devices: glass passivated; high voltage
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A
Case: DPAK
Mounting: SMD
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Features of semiconductor devices: glass passivated; high voltage
Type of diode: rectifying
Max. forward impulse current: 150A
Max. forward voltage: 1.1V
Load current: 8A
кількість в упаковці: 1 шт
товар відсутній
| VS-8TQ060-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
товар відсутній
| VS-8TQ080-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
на замовлення 3089 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 95.55 грн |
| 4+ | 81.9 грн |
| 10+ | 70.65 грн |
| 17+ | 57.5 грн |
| 46+ | 54.22 грн |
| VS-8TQ080S-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 8A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 8A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
товар відсутній
| VS-8TQ080SHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 8A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 8A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
товар відсутній
| VS-8TQ100-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
на замовлення 664 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 67.39 грн |
| 10+ | 56.68 грн |
| 21+ | 46 грн |
| 57+ | 43.54 грн |
| VS-8TQ100S-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 230A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 230A
кількість в упаковці: 1 шт
товар відсутній
| VS-8TQ100SHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8A; D2PAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.58V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 850A
кількість в упаковці: 1 шт
товар відсутній
| VS-ETH1506-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220AC; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 12pF
Kind of package: tube
Max. forward impulse current: 160A
Case: TO220AC
Max. forward voltage: 1.6V
Leakage current: 0.2mA
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 65ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220AC; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 12pF
Kind of package: tube
Max. forward impulse current: 160A
Case: TO220AC
Max. forward voltage: 1.6V
Leakage current: 0.2mA
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 65ns
кількість в упаковці: 1 шт
товар відсутній
| VS-ETH3006FP-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 27ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 27ns
кількість в упаковці: 1 шт
на замовлення 550 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.24 грн |
| 3+ | 137.35 грн |
| 10+ | 101.86 грн |
| 27+ | 96.11 грн |
| VS-ETH3006S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 70ns; D2PAK; Ufmax: 1.8V; Ir: 300uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 70ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Leakage current: 0.3mA
Kind of package: tube
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 70ns; D2PAK; Ufmax: 1.8V; Ir: 300uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 70ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Leakage current: 0.3mA
Kind of package: tube
кількість в упаковці: 1 шт
товар відсутній
| VS-ETL0806-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 6pF
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.9V
Leakage current: 50µA
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 240ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 6pF
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.9V
Leakage current: 50µA
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 240ns
кількість в упаковці: 1 шт
товар відсутній
| VS-ETL1506-1-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; TO262AA; 290ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 12pF
Kind of package: tube
Max. forward impulse current: 200A
Case: TO262AA
Max. forward voltage: 0.91V
Leakage current: 0.1mA
Reverse recovery time: 290ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 200A; TO262AA; 290ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 12pF
Kind of package: tube
Max. forward impulse current: 200A
Case: TO262AA
Max. forward voltage: 0.91V
Leakage current: 0.1mA
Reverse recovery time: 290ns
кількість в упаковці: 1 шт
товар відсутній
| VS-ETU1506-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220AC; 24ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: TO220AC
Max. forward voltage: 1.1V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 24ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 160A; TO220AC; 24ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 160A
Case: TO220AC
Max. forward voltage: 1.1V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 24ns
кількість в упаковці: 1 шт
товар відсутній
| VS-ETU3006-1-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO262AA; 100ns
Mounting: THT
Case: TO262AA
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.35V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 200A
Leakage current: 0.25mA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO262AA; 100ns
Mounting: THT
Case: TO262AA
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.35V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 200A
Leakage current: 0.25mA
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
кількість в упаковці: 1 шт
товар відсутній
| VS-ETU3006STRL-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Case: D2PAK
Max. forward voltage: 1.35V
Max. forward impulse current: 200A
Leakage current: 0.25mA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Case: D2PAK
Max. forward voltage: 1.35V
Max. forward impulse current: 200A
Leakage current: 0.25mA
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| VS-ETX0806-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 6pF
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AC
Max. forward voltage: 2V
Leakage current: 0.15mA
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 33ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 6pF
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220AC
Max. forward voltage: 2V
Leakage current: 0.15mA
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 33ns
кількість в упаковці: 1 шт
товар відсутній
| VS-ETX0806FP-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FP; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 6pF
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FP
Max. forward voltage: 2V
Leakage current: 0.15mA
Reverse recovery time: 33ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FP; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 6pF
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220FP
Max. forward voltage: 2V
Leakage current: 0.15mA
Reverse recovery time: 33ns
кількість в упаковці: 1 шт
на замовлення 381 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 72.51 грн |
| 10+ | 61.61 грн |
| 19+ | 50.93 грн |
| 51+ | 47.65 грн |
| VS-FA40SA50LC |
|
Виробник: VISHAY
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 40A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 40A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 106mΩ
Pulsed drain current: 150A
Power dissipation: 543W
Kind of channel: enhanced
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 40A; SOT227B; screw; Idm: 150A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 40A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 106mΩ
Pulsed drain current: 150A
Power dissipation: 543W
Kind of channel: enhanced
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| VS-FC270SA20 |
|
Виробник: VISHAY
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 270A; SOT227B; screw; Idm: 680A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 270A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.3mΩ
Pulsed drain current: 680A
Power dissipation: 937W
Technology: ThunderFET
Kind of channel: enhanced
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 160 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 270A; SOT227B; screw; Idm: 680A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 270A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.3mΩ
Pulsed drain current: 680A
Power dissipation: 937W
Technology: ThunderFET
Kind of channel: enhanced
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 160 шт
товар відсутній
| VS-GBPC2512W |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
кількість в упаковці: 1 шт
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 25A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
кількість в упаковці: 1 шт
товар відсутній
| VS-GBPC3506W |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: tube
Max. forward voltage: 1.1V
кількість в упаковці: 1 шт
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.0mm
Features of semiconductor devices: glass passivated
Kind of package: tube
Max. forward voltage: 1.1V
кількість в упаковці: 1 шт
товар відсутній
| VS-GT180DA120U |
|
Виробник: VISHAY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 185A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 185A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 390A
Technology: Trench
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 185A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 185A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 390A
Technology: Trench
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| VS-GT200TS065N |
|
Виробник: VISHAY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 144A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 144A
Case: INT-A-Pak
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 144A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 144A
Case: INT-A-Pak
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| VS-GT200TS065S |
|
Виробник: VISHAY
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 378A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 378A
Case: INT-A-Pak
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 810A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 378A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 378A
Case: INT-A-Pak
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 810A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| VS-HFA04SD60S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 4A; 17ns; DPAK; Ufmax: 1.4V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 25A
Case: DPAK
Max. forward voltage: 1.4V
Reverse recovery time: 17ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 4A; 17ns; DPAK; Ufmax: 1.4V; Ifsm: 25A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 25A
Case: DPAK
Max. forward voltage: 1.4V
Reverse recovery time: 17ns
кількість в упаковці: 1 шт
на замовлення 416 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 53.74 грн |
| 10+ | 45.18 грн |
| 26+ | 37.79 грн |
| 70+ | 35.32 грн |
| VS-HFA08PB120-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 130A; TO247AC; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: TO247AC
Max. forward voltage: 2.4V
Reverse recovery time: 28ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 130A; TO247AC; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: TO247AC
Max. forward voltage: 2.4V
Reverse recovery time: 28ns
кількість в упаковці: 1 шт
товар відсутній
| VS-HFA08SD60SL-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; DPAK; Ufmax: 1.7V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Max. load current: 24A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 25pF
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: DPAK
Max. forward voltage: 1.7V
Leakage current: 0.5mA
Power dissipation: 14W
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 90ns; DPAK; Ufmax: 1.7V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Max. load current: 24A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 25pF
Kind of package: reel; tape
Max. forward impulse current: 60A
Case: DPAK
Max. forward voltage: 1.7V
Leakage current: 0.5mA
Power dissipation: 14W
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
товар відсутній
| VS-HFA08TA60C-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4Ax2; tube; Ifsm: 25A; TO220AB; 17ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A x2
Max. load current: 8A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 25A
Case: TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 17ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4Ax2; tube; Ifsm: 25A; TO220AB; 17ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A x2
Max. load current: 8A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 25A
Case: TO220AB
Max. forward voltage: 1.4V
Reverse recovery time: 17ns
кількість в упаковці: 1 шт
товар відсутній
| VS-HFA08TB120S-M3 |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK; Ufmax: 3.1V; Ir: 1mA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Max. load current: 32A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Kind of package: tube
Max. forward impulse current: 130A
Case: D2PAK
Max. forward voltage: 3.1V
Leakage current: 1mA
Power dissipation: 29W
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK; Ufmax: 3.1V; Ir: 1mA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Max. load current: 32A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Kind of package: tube
Max. forward impulse current: 130A
Case: D2PAK
Max. forward voltage: 3.1V
Leakage current: 1mA
Power dissipation: 29W
Reverse recovery time: 160ns
кількість в упаковці: 1 шт
товар відсутній
| VS-HFA08TB60-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; 14W; 18ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 1.4V
Heatsink thickness: 1.14...1.4mm
Power dissipation: 14W
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; 14W; 18ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 1.4V
Heatsink thickness: 1.14...1.4mm
Power dissipation: 14W
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
на замовлення 1365 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.04 грн |
| 6+ | 49.48 грн |
| 10+ | 42.14 грн |
| 25+ | 38.61 грн |
| 50+ | 38.2 грн |
| 68+ | 36.56 грн |
| 250+ | 35.16 грн |
| VS-HFA15PB60-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO247AC; Ir: 1mA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Max. load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 50pF
Kind of package: tube
Max. forward impulse current: 150A
Case: TO247AC
Max. forward voltage: 1.6V
Leakage current: 1mA
Power dissipation: 29W
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO247AC; Ir: 1mA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Max. load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 50pF
Kind of package: tube
Max. forward impulse current: 150A
Case: TO247AC
Max. forward voltage: 1.6V
Leakage current: 1mA
Power dissipation: 29W
Reverse recovery time: 120ns
кількість в упаковці: 1 шт
товар відсутній
| VS-HFA15TB60-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Max. forward voltage: 1.2V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 23ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Max. forward voltage: 1.2V
Heatsink thickness: 1.14...1.4mm
Reverse recovery time: 23ns
кількість в упаковці: 1 шт
на замовлення 3308 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 92.99 грн |
| 10+ | 78.86 грн |
| 14+ | 68.18 грн |
| 39+ | 64.08 грн |
| VS-HFA16PB120-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 16A; tube; Ifsm: 190A; TO247AC; 60W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 16A
Max. load current: 64A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 40pF
Kind of package: tube
Max. forward impulse current: 190A
Case: TO247AC
Max. forward voltage: 2.3V
Power dissipation: 60W
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 16A; tube; Ifsm: 190A; TO247AC; 60W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 16A
Max. load current: 64A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 40pF
Kind of package: tube
Max. forward impulse current: 190A
Case: TO247AC
Max. forward voltage: 2.3V
Power dissipation: 60W
Reverse recovery time: 30ns
кількість в упаковці: 1 шт
на замовлення 257 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 342.37 грн |
| 5+ | 227.77 грн |
| 13+ | 207.02 грн |
| VS-HFA16TA60C-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 60A; TO220AB; 14W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 24A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 25pF
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AB
Max. forward voltage: 1.7V
Leakage current: 0.5mA
Heatsink thickness: 1.14...1.4mm
Power dissipation: 14W
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; tube; Ifsm: 60A; TO220AB; 14W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Max. load current: 24A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Capacitance: 25pF
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AB
Max. forward voltage: 1.7V
Leakage current: 0.5mA
Heatsink thickness: 1.14...1.4mm
Power dissipation: 14W
Reverse recovery time: 90ns
кількість в упаковці: 1 шт
товар відсутній
| VS-HFA240NJ40CPBF |
|
Виробник: VISHAY
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 240A; TO244; screw
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.4kV
Load current: 240A
Case: TO244
Max. forward voltage: 1.5V
Max. forward impulse current: 0.9kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: HEXFRED®
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 240A; TO244; screw
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 0.4kV
Load current: 240A
Case: TO244
Max. forward voltage: 1.5V
Max. forward impulse current: 0.9kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: HEXFRED®
Reverse recovery time: 50ns
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4830.36 грн |
| VS-HFA25TB60-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 55pF
Kind of package: tube
Max. forward impulse current: 225A
Case: TO220AC
Max. forward voltage: 1.3V
Reverse recovery time: 23ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 225A; TO220AC; 23ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 55pF
Kind of package: tube
Max. forward impulse current: 225A
Case: TO220AC
Max. forward voltage: 1.3V
Reverse recovery time: 23ns
кількість в упаковці: 1 шт
на замовлення 752 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 216.75 грн |
| 3+ | 187.68 грн |
| 7+ | 151.98 грн |
| 18+ | 143.76 грн |
| 250+ | 138.01 грн |