| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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LL4148-M-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.3A; 8ns; MiniMELF,SOD80; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.3A Reverse recovery time: 8ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: MiniMELF; SOD80 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N5408-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; Ufmax: 1.2V Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Leakage current: 5µA Case: DO201AD Type of diode: rectifying Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1.2V |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. | |||||||||||||||||||
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SMAJ36A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 40÷44.2V; 6.9A; unidirectional; DO214AC,SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Technology: TransZorb® |
на замовлення 7457 шт: термін постачання 14-30 дні (днів) |
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CRCW12065K10JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 5.1kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 5.1kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Roll diameter max.: 180mm Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 Body dimensions: 3.2x1.6x0.55mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW12065K10JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 5.1kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 5.1kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Body dimensions: 3.2x1.6x0.55mm Quantity in set/package: 5000pcs. |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAT54S-G3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 200mA Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N4148WS-E3-18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; SOD323; Ufmax: 1.2V; Ifsm: 350mA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.2V Max. forward impulse current: 0.35A Leakage current: 0.1mA Power dissipation: 0.2W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N4148WS-HE3-18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1.2V Max. forward impulse current: 0.35A Leakage current: 0.1mA Power dissipation: 0.2W Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SS14HE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Application: automotive industry Leakage current: 0.2mA |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||||
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SS14HE3_B/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Application: automotive industry Leakage current: 0.2mA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N4734A-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 5.6V; DO41; single diode; 14 inch reel; 1N47xxA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.6V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: 14 inch reel Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54A-E3-18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 200mA; 5ns; 230mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Power dissipation: 0.23W Leakage current: 2µA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BZX85C15-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 15V; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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B340A-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A Case: DO214AC; SMA Mounting: SMD Max. forward voltage: 0.55V Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Leakage current: 0.5mA Type of diode: Schottky rectifying Max. forward impulse current: 65A |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N4742A-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; DO41; single diode; 14 inch reel; 1N47xxA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: 14 inch reel Manufacturer series: 1N47xxA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SS16HE3_B/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Application: automotive industry Leakage current: 0.2mA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW040249R9FKED | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 49.9Ω; SMD; 0402; 62.5mW; ±1%; CRCW0402; 50V Type of resistor: thick film Resistance: 49.9Ω Case - inch: 0402 Case - mm: 1005 Power: 62.5mW Tolerance: ±1% Operating voltage: 50V Temperature coefficient: 100ppm/°C Mounting: SMD Manufacturer series: CRCW0402 Operating temperature: -55...155°C |
на замовлення 3062 шт: термін постачання 14-30 дні (днів) |
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BAT54WS-E3-18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns; 150mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Power dissipation: 0.15W Leakage current: 2µA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAT54WS-G3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Reverse recovery time: 5ns Leakage current: 2µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RCA120647K0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 47kΩ; 1206; 250mW; ±5%; 200V; -55÷155°C Resistance: 47kΩ Tolerance: ±5% Power: 0.25W Operating voltage: 200V Temperature coefficient: 100ppm/°C Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Type of resistor: thick film |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ5.0A-M3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ5.0A-M3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ5.0AHE3_A/I | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ33AHE3_B/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 7 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ30A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAS70-06-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 2pF Max. forward voltage: 1V Max. forward impulse current: 0.2A Kind of package: 7 inch reel Reverse recovery time: 5ns Manufacturer standard package: 3000pcs. Power dissipation: 0.2W Features of semiconductor devices: small signal Application: automotive industry Leakage current: 0.1µA |
на замовлення 1250 шт: термін постачання 14-30 дні (днів) |
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| SIHH250N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 600V; 13A; 89W; single transistor Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 13A Power dissipation: 89W On-state resistance: 0.25Ω Mounting: SMD Gate charge: 23nC Kind of channel: enhancement Semiconductor structure: single transistor |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| SIHB20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 19A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: 30V Mounting: SMD Gate charge: 92nC |
на замовлення 800 шт: термін постачання 14-30 дні (днів) |
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CRCW080549R9FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 49.9Ω; SMD; 0805; 0.125W; ±1%; CRCW0805; 150V Type of resistor: thick film Resistance: 49.9Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Manufacturer series: CRCW0805 Operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 30400 шт: термін постачання 14-30 дні (днів) |
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| SMAJ5.0CAHE3_A/I | VISHAY |
Category: Diodes - UnclassifiedDescription: SMAJ5.0CAHE3_A/I |
на замовлення 105000 шт: термін постачання 14-30 дні (днів) |
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TZMC15-GS08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; SMD; MiniMELF,SOD80; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Case: MiniMELF; SOD80 Semiconductor structure: single diode Kind of package: 7 inch reel Manufacturer standard package: 2500pcs. |
на замовлення 42340 шт: термін постачання 14-30 дні (днів) |
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ES1D-M3/61T | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||||
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ES1D-M3/5AT | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||||
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ES1DHE3_A/H | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 15ns; DO214AC,SMA; Ufmax: 920mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 15ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Application: automotive industry Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMCJ24A-E3/57T | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1081 шт: термін постачання 14-30 дні (днів) |
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| SMCJ24A-E3/9AT | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | |||||||||||||||||||
| SMCJ24AHE3_A/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | |||||||||||||||||||
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SIHP18N50C-E3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 500V Drain current: 18A Power dissipation: 223W Case: TO220AB Gate-source voltage: 30V Mounting: THT Gate charge: 76nC Kind of channel: enhancement Semiconductor structure: single transistor |
на замовлення 400 шт: термін постачання 14-30 дні (днів) |
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BZX55C4V7-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 4.7V; DO35; single diode; 14 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: 14 inch reel Manufacturer standard package: 10000pcs. |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRLZ34PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 110A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 70mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BPW20RF | VISHAY |
Category: PhotodiodesDescription: Photodiode; THT; 920nm; 550÷1040nm; 100° Type of photoelement: photodiode Mounting: THT Wavelength of peak sensitivity: 920nm Wavelength: 550...1040nm Viewing angle: 100° Active area: 7.5mm2 Reverse light current at 1klx: 60µA |
на замовлення 488 шт: термін постачання 14-30 дні (днів) |
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SF4007-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; SOD57; 10 inch reel; 75ns Reverse recovery time: 75ns Mounting: THT Max. forward impulse current: 30A Manufacturer standard package: 5000pcs. Max. forward voltage: 1.7V Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. off-state voltage: 1kV Load current: 1A Kind of package: 10 inch reel Semiconductor structure: single diode Case: SOD57 Type of diode: rectifying |
на замовлення 8008 шт: термін постачання 14-30 дні (днів) |
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VS-GBPC3512A | VISHAY |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 475A Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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| 4N25-X009 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6 Mounting: SMD Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Case: SMD6 Number of channels: 1 Manufacturer series: 4N25 Collector-emitter voltage: 70V Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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4N25-X006 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6 Mounting: THT Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Case: DIP6 Number of channels: 1 Manufacturer series: 4N2X Collector-emitter voltage: 70V Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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4N25-X001 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6 Mounting: THT Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Case: DIP6 Number of channels: 1 Manufacturer series: 4N2X Collector-emitter voltage: 70V Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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4N25-X016 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6 Mounting: THT Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Case: DIP6 Number of channels: 1 Manufacturer series: 4N2X Collector-emitter voltage: 70V Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 4N25-X017 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6 Mounting: SMD Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Case: SMD6 Number of channels: 1 Manufacturer series: 4N2X Collector-emitter voltage: 70V Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 4N25-X017T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6 Mounting: SMD Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Case: SMD6 Number of channels: 1 Manufacturer series: 4N2X Collector-emitter voltage: 70V Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RCA120620R0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 1206; 20Ω; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 20Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW120620R0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 20Ω; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C Type of resistor: thick film Resistance: 20Ω Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW120620R0FKEAHP | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 20Ω; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 20Ω Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.75W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 3.1x1.6x0.5mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DF06S-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 4022 шт: термін постачання 14-30 дні (днів) |
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DF06SA-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 30A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 1390 шт: термін постачання 14-30 дні (днів) |
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DF06S-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
| DF06SA-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 30A Case: DFS Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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CRCW040210K0JNTDBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 0402; 62.5mW; ±5%; 50V; -55÷155°C Type of resistor: thick film Resistance: 10kΩ Case - inch: 0402 Case - mm: 1005 Power: 62.5mW Tolerance: ±5% Operating voltage: 50V Temperature coefficient: 200ppm/°C Mounting: SMD Operating temperature: -55...155°C |
на замовлення 23560 шт: термін постачання 14-30 дні (днів) |
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CRCW040210K0JNED | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 10kΩ; SMD; 0402; 0.063W; ±5%; 50V; -55÷155°C Type of resistor: thick film Resistance: 10kΩ Case - inch: 0402 Case - mm: 1005 Power: 63mW Tolerance: ±5% Operating voltage: 50V Temperature coefficient: 200ppm/°C Mounting: SMD Operating temperature: -55...155°C |
на замовлення 3990 шт: термін постачання 14-30 дні (днів) |
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H11AA1 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 30V Case: DIP6 CTR@If: 20%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| H11AA1-X007T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 30V Case: SMD6 Conform to the norm: UL Manufacturer series: H11AA Turn-on time: 4µs Turn-off time: 5µs CTR@If: 20%@10mA |
товару немає в наявності |
В кошику од. на суму грн. |
| LL4148-M-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 8ns; MiniMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 8ns; MiniMELF,SOD80; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.3A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: MiniMELF; SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
| 1N5408-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; Ufmax: 1.2V
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Leakage current: 5µA
Case: DO201AD
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.2V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO201AD; Ufmax: 1.2V
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Leakage current: 5µA
Case: DO201AD
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.2V
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| SMAJ36A-E3/61 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.9A; unidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40÷44.2V; 6.9A; unidirectional; DO214AC,SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
на замовлення 7457 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 20.10 грн |
| 41+ | 10.35 грн |
| 50+ | 8.57 грн |
| 100+ | 6.96 грн |
| 250+ | 6.02 грн |
| 500+ | 5.51 грн |
| 1800+ | 5.09 грн |
| 3600+ | 4.92 грн |
| 5400+ | 4.75 грн |
| CRCW12065K10JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.55mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CRCW12065K10JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 3.2x1.6x0.55mm
Quantity in set/package: 5000pcs.
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 3.2x1.6x0.55mm
Quantity in set/package: 5000pcs.
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BAT54S-G3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 200mA
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 200mA
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 1N4148WS-E3-18 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; SOD323; Ufmax: 1.2V; Ifsm: 350mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; SOD323; Ufmax: 1.2V; Ifsm: 350mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Power dissipation: 0.2W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 1N4148WS-HE3-18 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Power dissipation: 0.2W
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Power dissipation: 0.2W
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SS14HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Application: automotive industry
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Application: automotive industry
Leakage current: 0.2mA
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| SS14HE3_B/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Application: automotive industry
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Application: automotive industry
Leakage current: 0.2mA
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| 1N4734A-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.6V; DO41; single diode; 14 inch reel; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.6V; DO41; single diode; 14 inch reel; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer series: 1N47xxA
товару немає в наявності
В кошику
од. на суму грн.
| BAT54A-E3-18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 200mA; 5ns; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.23W
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 200mA; 5ns; 230mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.23W
Leakage current: 2µA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZX85C15-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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Мінімальне замовлення: 5000 шт
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| B340A-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A
Case: DO214AC; SMA
Mounting: SMD
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Leakage current: 0.5mA
Type of diode: Schottky rectifying
Max. forward impulse current: 65A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A
Case: DO214AC; SMA
Mounting: SMD
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Leakage current: 0.5mA
Type of diode: Schottky rectifying
Max. forward impulse current: 65A
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Мінімальне замовлення: 7500 шт
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| 1N4742A-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; 14 inch reel; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; 14 inch reel; 1N47xxA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer series: 1N47xxA
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Мінімальне замовлення: 5000 шт
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| SS16HE3_B/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Application: automotive industry
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 1A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Application: automotive industry
Leakage current: 0.2mA
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Мінімальне замовлення: 7500 шт
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| CRCW040249R9FKED |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 49.9Ω; SMD; 0402; 62.5mW; ±1%; CRCW0402; 50V
Type of resistor: thick film
Resistance: 49.9Ω
Case - inch: 0402
Case - mm: 1005
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 49.9Ω; SMD; 0402; 62.5mW; ±1%; CRCW0402; 50V
Type of resistor: thick film
Resistance: 49.9Ω
Case - inch: 0402
Case - mm: 1005
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Manufacturer series: CRCW0402
Operating temperature: -55...155°C
на замовлення 3062 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 66+ | 6.92 грн |
| BAT54WS-E3-18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns; 150mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.15W
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns; 150mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.15W
Leakage current: 2µA
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Мінімальне замовлення: 10000 шт
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| BAT54WS-G3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Leakage current: 2µA
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Мінімальне замовлення: 3000 шт
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| RCA120647K0JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 47kΩ; 1206; 250mW; ±5%; 200V; -55÷155°C
Resistance: 47kΩ
Tolerance: ±5%
Power: 0.25W
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 47kΩ; 1206; 250mW; ±5%; 200V; -55÷155°C
Resistance: 47kΩ
Tolerance: ±5%
Power: 0.25W
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Type of resistor: thick film
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Мінімальне замовлення: 10000 шт
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| SMBJ5.0A-M3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
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Мінімальне замовлення: 750 шт
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| SMBJ5.0A-M3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
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Мінімальне замовлення: 3200 шт
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| SMBJ5.0AHE3_A/I |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
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Мінімальне замовлення: 3200 шт
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| SMBJ33AHE3_B/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 7 inch reel; tape
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Мінімальне замовлення: 750 шт
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| SMBJ30A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
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Мінімальне замовлення: 3200 шт
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| BAS70-06-HE3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Manufacturer standard package: 3000pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Application: automotive industry
Leakage current: 0.1µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 2pF
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Manufacturer standard package: 3000pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Application: automotive industry
Leakage current: 0.1µA
на замовлення 1250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 8.68 грн |
| 100+ | 4.78 грн |
| 500+ | 4.22 грн |
| SIHH250N60EF-T1GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 13A; 89W; single transistor
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 13A; 89W; single transistor
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Semiconductor structure: single transistor
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 219.28 грн |
| SIHB20N50E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: 30V
Mounting: SMD
Gate charge: 92nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: 30V
Mounting: SMD
Gate charge: 92nC
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 157.15 грн |
| CRCW080549R9FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 49.9Ω; SMD; 0805; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Resistance: 49.9Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Manufacturer series: CRCW0805
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 49.9Ω; SMD; 0805; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Resistance: 49.9Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Manufacturer series: CRCW0805
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 30400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.29 грн |
| 500+ | 1.12 грн |
| 1000+ | 0.69 грн |
| 5000+ | 0.24 грн |
| SMAJ5.0CAHE3_A/I |
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на замовлення 105000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7500+ | 9.05 грн |
| TZMC15-GS08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; MiniMELF,SOD80; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
на замовлення 42340 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.88 грн |
| 75+ | 5.68 грн |
| 237+ | 1.79 грн |
| 500+ | 1.48 грн |
| 1000+ | 1.37 грн |
| 2500+ | 1.32 грн |
| 5000+ | 1.31 грн |
| ES1D-M3/61T |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
товару немає в наявності
Мінімальне замовлення: 1800 шт
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| ES1D-M3/5AT |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
товару немає в наявності
Мінімальне замовлення: 7500 шт
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| ES1DHE3_A/H |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Application: automotive industry
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Application: automotive industry
Leakage current: 5µA
товару немає в наявності
Мінімальне замовлення: 1800 шт
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| SMCJ24A-E3/57T |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1081 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.77 грн |
| 16+ | 26.98 грн |
| 100+ | 18.50 грн |
| 500+ | 12.98 грн |
| SMCJ24A-E3/9AT |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3500 шт
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| SMCJ24AHE3_A/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
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Мінімальне замовлення: 850 шт
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| SIHP18N50C-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 223W
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Gate charge: 76nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 223W
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Gate charge: 76nC
Kind of channel: enhancement
Semiconductor structure: single transistor
на замовлення 400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 130.65 грн |
| BZX55C4V7-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; DO35; single diode; 14 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer standard package: 10000pcs.
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; DO35; single diode; 14 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: 14 inch reel
Manufacturer standard package: 10000pcs.
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Мінімальне замовлення: 10000 шт
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| IRLZ34PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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| BPW20RF |
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Виробник: VISHAY
Category: Photodiodes
Description: Photodiode; THT; 920nm; 550÷1040nm; 100°
Type of photoelement: photodiode
Mounting: THT
Wavelength of peak sensitivity: 920nm
Wavelength: 550...1040nm
Viewing angle: 100°
Active area: 7.5mm2
Reverse light current at 1klx: 60µA
Category: Photodiodes
Description: Photodiode; THT; 920nm; 550÷1040nm; 100°
Type of photoelement: photodiode
Mounting: THT
Wavelength of peak sensitivity: 920nm
Wavelength: 550...1040nm
Viewing angle: 100°
Active area: 7.5mm2
Reverse light current at 1klx: 60µA
на замовлення 488 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 365.47 грн |
| 5+ | 274.88 грн |
| 25+ | 273.19 грн |
| SF4007-TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; SOD57; 10 inch reel; 75ns
Reverse recovery time: 75ns
Mounting: THT
Max. forward impulse current: 30A
Manufacturer standard package: 5000pcs.
Max. forward voltage: 1.7V
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: 10 inch reel
Semiconductor structure: single diode
Case: SOD57
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; SOD57; 10 inch reel; 75ns
Reverse recovery time: 75ns
Mounting: THT
Max. forward impulse current: 30A
Manufacturer standard package: 5000pcs.
Max. forward voltage: 1.7V
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: 10 inch reel
Semiconductor structure: single diode
Case: SOD57
Type of diode: rectifying
на замовлення 8008 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.91 грн |
| 5000+ | 25.96 грн |
| VS-GBPC3512A |
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Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 475A
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 475A
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 491.55 грн |
| 5+ | 402.99 грн |
| 10+ | 371.60 грн |
| 25+ | 335.12 грн |
| 4N25-X009 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: SMD6
Number of channels: 1
Manufacturer series: 4N25
Collector-emitter voltage: 70V
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: SMD6
Number of channels: 1
Manufacturer series: 4N25
Collector-emitter voltage: 70V
Kind of output: transistor
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| 4N25-X006 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: DIP6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: DIP6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
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| 4N25-X001 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: DIP6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: DIP6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
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| 4N25-X016 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: DIP6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: DIP6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
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| 4N25-X017 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: SMD6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: SMD6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
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| 4N25-X017T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: SMD6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Case: SMD6
Number of channels: 1
Manufacturer series: 4N2X
Collector-emitter voltage: 70V
Kind of output: transistor
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| RCA120620R0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 20Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 20Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 1206; 20Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 20Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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Мінімальне замовлення: 10000 шт
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| CRCW120620R0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 20Ω; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 20Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; 20Ω; SMD; 1206; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 20Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
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Мінімальне замовлення: 5000 шт
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| CRCW120620R0FKEAHP |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 20Ω; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 20Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.1x1.6x0.5mm
Category: SMD resistors
Description: Resistor: thick film; 20Ω; SMD; 1206; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 20Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.1x1.6x0.5mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| DF06S-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 4022 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 74.92 грн |
| 12+ | 35.38 грн |
| 100+ | 26.98 грн |
| 500+ | 21.38 грн |
| 1000+ | 18.92 грн |
| 1500+ | 17.48 грн |
| 3000+ | 16.97 грн |
| DF06SA-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 1390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.70 грн |
| 13+ | 33.09 грн |
| 100+ | 24.26 грн |
| 500+ | 19.68 грн |
| 1000+ | 18.07 грн |
| DF06S-E3/45 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 5000 шт
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| DF06SA-E3/45 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| CRCW040210K0JNTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 0402; 62.5mW; ±5%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Case - inch: 0402
Case - mm: 1005
Power: 62.5mW
Tolerance: ±5%
Operating voltage: 50V
Temperature coefficient: 200ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 0402; 62.5mW; ±5%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Case - inch: 0402
Case - mm: 1005
Power: 62.5mW
Tolerance: ±5%
Operating voltage: 50V
Temperature coefficient: 200ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 23560 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 410+ | 1.12 грн |
| 760+ | 0.56 грн |
| 2600+ | 0.16 грн |
| 6420+ | 0.07 грн |
| 10000+ | 0.05 грн |
| CRCW040210K0JNED |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 0402; 0.063W; ±5%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Case - inch: 0402
Case - mm: 1005
Power: 63mW
Tolerance: ±5%
Operating voltage: 50V
Temperature coefficient: 200ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 10kΩ; SMD; 0402; 0.063W; ±5%; 50V; -55÷155°C
Type of resistor: thick film
Resistance: 10kΩ
Case - inch: 0402
Case - mm: 1005
Power: 63mW
Tolerance: ±5%
Operating voltage: 50V
Temperature coefficient: 200ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 3990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 530+ | 0.87 грн |
| 740+ | 0.58 грн |
| 960+ | 0.44 грн |
| 1110+ | 0.39 грн |
| H11AA1 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: DIP6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: DIP6
CTR@If: 20%@10mA
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| H11AA1-X007T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL
Manufacturer series: H11AA
Turn-on time: 4µs
Turn-off time: 5µs
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL
Manufacturer series: H11AA
Turn-on time: 4µs
Turn-off time: 5µs
CTR@If: 20%@10mA
товару немає в наявності
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од. на суму грн.
























