Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4040) > Сторінка 63 з 68
| Фото | Назва | Виробник | Інформація |
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| MSCSM120AM08CT3AG | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 675A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 268A On-state resistance: 7.8mΩ Power dissipation: 1409W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM16CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Case: SP1F Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ |
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| MSCSM120AM16CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Case: SP1F Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ кількість в упаковці: 1 шт |
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| MSCSM120AM31CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM31CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120AM50CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120AM50CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120DAM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: boost chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120DAM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: boost chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120HM16CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120HM16CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120HM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120HM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120HM50CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120HM50CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 110A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ Power dissipation: 245W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120SKM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: buck chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120SKM11CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Case: SP3F Topology: buck chopper; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A On-state resistance: 10.4mΩ Power dissipation: 1067W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120TAM11CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120TAM11CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 500A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM120TAM16CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Power dissipation: 728W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 350A Case: SP6P Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 136A On-state resistance: 16mΩ |
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| MSCSM120TAM16CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB Power dissipation: 728W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 350A Case: SP6P Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 136A On-state resistance: 16mΩ кількість в упаковці: 1 шт |
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| MSCSM120TAM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC |
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| MSCSM120TAM31CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 180A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC кількість в упаковці: 1 шт |
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| MSCSM70AM025CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw Semiconductor structure: transistor/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Case: D3 |
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| MSCSM70AM025CD3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw Semiconductor structure: transistor/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Case: D3 кількість в упаковці: 1 шт |
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| MSCSM70AM025CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Case: SP6C |
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| MSCSM70AM025CT6AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 538A On-state resistance: 2.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Case: SP6C кількість в упаковці: 1 шт |
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| MSCSM70AM07CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 281A On-state resistance: 6.4mΩ Power dissipation: 988W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 700A Case: SP3F |
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| MSCSM70AM07CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 281A On-state resistance: 6.4mΩ Power dissipation: 988W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 700A Case: SP3F кількість в упаковці: 1 шт |
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| MSCSM70AM10CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 192A On-state resistance: 9.5mΩ Power dissipation: 690W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 482A Case: SP3F |
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| MSCSM70AM10CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 192A On-state resistance: 9.5mΩ Power dissipation: 690W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 482A Case: SP3F кількість в упаковці: 1 шт |
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| MSCSM70AM19CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Case: SP1F |
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| MSCSM70AM19CT1AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Case: SP1F кількість в упаковці: 1 шт |
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| MSCSM70HM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Case: SP3F |
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| MSCSM70HM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 250A Case: SP3F кількість в упаковці: 1 шт |
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| MSCSM70TAM05TPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 278A On-state resistance: 6.4mΩ Power dissipation: 966W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 700A Case: SP6P |
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| MSCSM70TAM05TPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 278A On-state resistance: 6.4mΩ Power dissipation: 966W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 700A Case: SP6P кількість в упаковці: 1 шт |
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| MSCSM70TAM10CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 476A Case: SP6P |
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| MSCSM70TAM10CTPAG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 476A Case: SP6P кількість в упаковці: 1 шт |
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| MSCSM70TAM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A Case: SP3F |
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| MSCSM70TAM19CT3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A Case: SP3F кількість в упаковці: 1 шт |
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| MSCSM70VM10C4AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: Vienna Rectifier Pulsed drain current: 476A Case: SP4 |
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| MSCSM70VM10C4AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 189A On-state resistance: 9.5mΩ Power dissipation: 674W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: Vienna Rectifier Pulsed drain current: 476A Case: SP4 кількість в упаковці: 1 шт |
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| MSCSM70VM19C3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: Vienna Rectifier Pulsed drain current: 250A Case: SP3F |
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| MSCSM70VM19C3AG | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A Semiconductor structure: SiC diode/tiristor/transistor Drain-source voltage: 700V Drain current: 98A On-state resistance: 19mΩ Power dissipation: 365W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: Vienna Rectifier Pulsed drain current: 250A Case: SP3F кількість в упаковці: 1 шт |
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MSMBG51CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO215AA Mounting: SMD Leakage current: 1µA |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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MSMBG51CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO215AA Mounting: SMD Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 32 шт: термін постачання 7-14 дні (днів) |
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MSMBJ12CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA |
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MSMBJ12CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 30.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA кількість в упаковці: 1 шт |
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MSMBJ15A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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MSMBJ15A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 7-14 дні (днів) |
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MSMBJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 52.65V |
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MSMBJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 8.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 52.65V кількість в упаковці: 1 шт |
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MSMBJ48A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MSMBJ48A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 7-14 дні (днів) |
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MSMBJ51A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V |
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MSMBJ51A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V кількість в упаковці: 1 шт |
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MSMBJ6.0CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 0.8mA |
товар відсутній |
| MSCSM120AM08CT3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 675A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 268A
On-state resistance: 7.8mΩ
Power dissipation: 1409W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM11CT3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM11CT3AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM16CT1AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP1F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP1F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
товар відсутній
| MSCSM120AM16CT1AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP1F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP1F
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM31CT1AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM31CT1AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120AM50CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120AM50CT1AG |
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Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP1F; Press-in PCB; 245W
Case: SP1F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120DAM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: boost chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: boost chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120DAM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: boost chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: boost chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120HM16CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120HM16CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120HM31CT3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120HM31CT3AG |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120HM50CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120HM50CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 44A; SP3F; Press-in PCB; 245W
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 110A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 44A
On-state resistance: 50mΩ
Power dissipation: 245W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120SKM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120SKM11CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB
Case: SP3F
Topology: buck chopper; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 202A
On-state resistance: 10.4mΩ
Power dissipation: 1067W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120TAM11CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120TAM11CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120TAM16CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
товар відсутній
| MSCSM120TAM16CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 136A; SP6P; Press-in PCB
Power dissipation: 728W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Case: SP6P
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 136A
On-state resistance: 16mΩ
кількість в упаковці: 1 шт
товар відсутній
| MSCSM120TAM31CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
товар відсутній
| MSCSM120TAM31CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W
Case: SP3F
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM025CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: D3
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: D3
товар відсутній
| MSCSM70AM025CD3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: D3
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 700V; 538A; D3; SiC; screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: D3
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM025CT6AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: SP6C
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: SP6C
товар відсутній
| MSCSM70AM025CT6AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: SP6C
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 538A; SP6C; SiC; screw
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 538A
On-state resistance: 2.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Case: SP6C
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM07CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Case: SP3F
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Case: SP3F
товар відсутній
| MSCSM70AM07CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Case: SP3F
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 281A; SP3F; Press-in PCB; 988W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 281A
On-state resistance: 6.4mΩ
Power dissipation: 988W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Case: SP3F
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM10CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Case: SP3F
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Case: SP3F
товар відсутній
| MSCSM70AM10CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Case: SP3F
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 192A; SP3F; Press-in PCB; 690W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 192A
On-state resistance: 9.5mΩ
Power dissipation: 690W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 482A
Case: SP3F
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70AM19CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Case: SP1F
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Case: SP1F
товар відсутній
| MSCSM70AM19CT1AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Case: SP1F
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Case: SP1F
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70HM19CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Case: SP3F
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Case: SP3F
товар відсутній
| MSCSM70HM19CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Case: SP3F
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 250A
Case: SP3F
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70TAM05TPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Case: SP6P
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Case: SP6P
товар відсутній
| MSCSM70TAM05TPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Case: SP6P
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Case: SP6P
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70TAM10CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Case: SP6P
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Case: SP6P
товар відсутній
| MSCSM70TAM10CTPAG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Case: SP6P
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 189A; SP6P; Press-in PCB; 674W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Pulsed drain current: 476A
Case: SP6P
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70TAM19CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Case: SP3F
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Case: SP3F
товар відсутній
| MSCSM70TAM19CT3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Case: SP3F
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Case: SP3F
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70VM10C4AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Pulsed drain current: 476A
Case: SP4
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Pulsed drain current: 476A
Case: SP4
товар відсутній
| MSCSM70VM10C4AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Pulsed drain current: 476A
Case: SP4
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 189A; SP4; Idm: 476A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 189A
On-state resistance: 9.5mΩ
Power dissipation: 674W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Pulsed drain current: 476A
Case: SP4
кількість в упаковці: 1 шт
товар відсутній
| MSCSM70VM19C3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Pulsed drain current: 250A
Case: SP3F
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Pulsed drain current: 250A
Case: SP3F
товар відсутній
| MSCSM70VM19C3AG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Pulsed drain current: 250A
Case: SP3F
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; SiC diode/tiristor/transistor; 700V; 98A; SP3F; Idm: 250A
Semiconductor structure: SiC diode/tiristor/transistor
Drain-source voltage: 700V
Drain current: 98A
On-state resistance: 19mΩ
Power dissipation: 365W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: Vienna Rectifier
Pulsed drain current: 250A
Case: SP3F
кількість в упаковці: 1 шт
товар відсутній
| MSMBG51CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO215AA
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO215AA
Mounting: SMD
Leakage current: 1µA
на замовлення 32 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.76 грн |
| 10+ | 69.01 грн |
| 32+ | 68.29 грн |
| MSMBG51CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO215AA
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.7V; 7.3A; bidirectional; ±5%; DO215AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO215AA
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 32 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 93.17 грн |
| 10+ | 82.82 грн |
| 32+ | 81.95 грн |
| MSMBJ12CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
товар відсутній
| MSMBJ12CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 14V; 30.2A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
кількість в упаковці: 1 шт
товар відсутній
| MSMBJ15A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.77 грн |
| 5+ | 80.52 грн |
| 11+ | 76.92 грн |
| 25+ | 74.76 грн |
| MSMBJ15A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 17.6V; 24A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.13 грн |
| 5+ | 100.33 грн |
| 11+ | 92.3 грн |
| 25+ | 89.72 грн |
| 31+ | 87.99 грн |
| 100+ | 84.54 грн |
| MSMBJ45CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
товар відсутній
| MSMBJ45CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 52.65V; 8.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 8.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 52.65V
кількість в упаковці: 1 шт
товар відсутній
| MSMBJ48A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.29 грн |
| MSMBJ48A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 56.1V; 7.7A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 92.9 грн |
| 5+ | 72.56 грн |
| MSMBJ51A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
товар відсутній
| MSMBJ51A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Case: DO214AA
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 7.3A
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 59.7V
кількість в упаковці: 1 шт
товар відсутній
| MSMBJ6.0CAE3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
товар відсутній