Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4040) > Сторінка 64 з 68
| Фото | Назва | Виробник | Інформація |
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MSMBJ6.0CAE3 | MICROCHIP (MICROSEMI) |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 0.8mA кількість в упаковці: 1 шт |
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MSMBJ8.5CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 10µA |
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MSMBJ8.5CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.5V Breakdown voltage: 9.9V Max. forward impulse current: 41.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 10µA кількість в упаковці: 1 шт |
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MSMBJ9.0A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10.6V Max. forward impulse current: 39A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA |
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MSMBJ9.0A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10.6V Max. forward impulse current: 39A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 5µA кількість в упаковці: 1 шт |
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| MSMCGLCE18A | MICROCHIP (MICROSEMI) |
MSMCGLCE18A Unidirectional SMD transil diodes |
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MSMCJ17CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 53.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
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MSMCJ17CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 53.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA кількість в упаковці: 1 шт |
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MSMCJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 52.6V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
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MSMCJ45CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 52.6V Max. forward impulse current: 20.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA кількість в упаковці: 1 шт |
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| MSMCJ8.0CA | MICROCHIP (MICROSEMI) |
MSMCJ8.0CA Bidirectional SMD transil diodes |
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| MSMLJ100CA | MICROCHIP (MICROSEMI) |
MSMLJ100CA Bidirectional SMD transil diodes |
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MSMLJ12CAe3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA |
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MSMLJ12CAe3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 12V Breakdown voltage: 14V Max. forward impulse current: 150.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 5µA кількість в упаковці: 1 шт |
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| MSMLJ15AE3TR | MICROCHIP (MICROSEMI) | MSMLJ15AE3TR Unidirectional SMD transil diodes |
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| MSMLJ170CA | MICROCHIP (MICROSEMI) |
MSMLJ170CA Bidirectional SMD transil diodes |
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MSMLJ24CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 77.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
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MSMLJ24CA | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 77.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA кількість в упаковці: 1 шт |
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| MSMLJ28CA | MICROCHIP (MICROSEMI) |
MSMLJ28CA Bidirectional SMD transil diodes |
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MSMLJ40A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
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MSMLJ40A | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA кількість в упаковці: 1 шт |
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MSMLJ40CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA |
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MSMLJ40CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 40V Breakdown voltage: 46.8V Max. forward impulse current: 46.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 2µA кількість в упаковці: 1 шт |
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MSMLJ45Ae3 | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB Mounting: SMD Max. off-state voltage: 45V Breakdown voltage: 52.7V Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 41.2A Peak pulse power dissipation: 3kW Tolerance: ±5% |
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MSMLJ45Ae3 | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB Mounting: SMD Max. off-state voltage: 45V Breakdown voltage: 52.7V Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 41.2A Peak pulse power dissipation: 3kW Tolerance: ±5% |
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| MSMLJ51Ae3 | MICROCHIP (MICROSEMI) |
MSMLJ51AE3 Unidirectional SMD transil diodes |
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| MSMLJ51CAe3 | MICROCHIP (MICROSEMI) |
MSMLJ51CAE3 Bidirectional SMD transil diodes |
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MSMLJ54CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: bidirectional Mounting: SMD Max. forward impulse current: 34.4A Peak pulse power dissipation: 3kW Tolerance: ±5% Max. off-state voltage: 54V Breakdown voltage: 63.2V |
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MSMLJ54CAE3 | MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB Leakage current: 2µA Case: DO214AB Type of diode: TVS Semiconductor structure: bidirectional Mounting: SMD Max. forward impulse current: 34.4A Peak pulse power dissipation: 3kW Tolerance: ±5% Max. off-state voltage: 54V Breakdown voltage: 63.2V |
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| MSMLJ58CAE3 | MICROCHIP (MICROSEMI) |
MSMLJ58CAE3 Bidirectional SMD transil diodes |
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| MSMLJ6.0CA | MICROCHIP (MICROSEMI) |
MSMLJ6.0CA Bidirectional SMD transil diodes |
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| MSMLJ78CA | MICROCHIP (MICROSEMI) |
MSMLJ78CA Bidirectional SMD transil diodes |
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| MSMLJ85A | MICROCHIP (MICROSEMI) |
MSMLJ85A Unidirectional SMD transil diodes |
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MXSMCJ24Ae3 | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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MXSMCJ24Ae3 | MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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| PCIE-ROOTPORT-AD | MICROCHIP (MICROSEMI) |
Category: Microchip development kits Description: Dev.kit: Microchip; quick start board,power supply Type of development kit: Microchip Interface: PHY Kind of connector: PCIe Kit contents: power supply; quick start board |
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| PCIE-ROOTPORT-AD | MICROCHIP (MICROSEMI) |
Category: Microchip development kits Description: Dev.kit: Microchip; quick start board,power supply Type of development kit: Microchip Interface: PHY Kind of connector: PCIe Kit contents: power supply; quick start board кількість в упаковці: 1 шт |
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PD-3501G/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af Number of channels: 1 Operating temperature: 0...40°C Application: indoor Data transfer rate: 1Gbps Channel output power: 15.4W Type of module: PoE power module Standard: IEEE 802.3af |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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PD-9001GI/DC | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; Usup: 20÷60VDC; 30W; IP30; indoor Number of channels: 1 Operating temperature: -40...75°C Application: indoor Supply voltage: 20...60V DC Data transfer rate: 1Gbps Channel output power: 30W Type of module: PoE power module Standard: IEEE 802.3af/at IP rating: IP30 |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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PD-9001GO-ET/AC | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at Type of module: PoE power module Number of channels: 1 Data transfer rate: 1Gbps Channel output power: 30W Standard: IEEE 802.3af/at IP rating: IP67 Application: outdoor Operating temperature: -40...65°C |
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PD-9001GR/AT/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at Type of module: PoE power module Number of channels: 1 Data transfer rate: 1Gbps Channel output power: 30W Standard: IEEE 802.3af/at Application: indoor Operating temperature: -20...40°C |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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PD-9001GR/AT/AC-US | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at Type of module: PoE power module Number of channels: 1 Data transfer rate: 1Gbps Channel output power: 30W Standard: IEEE 802.3af/at Application: indoor Operating temperature: -20...40°C |
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PD-9501GC/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor Number of channels: 1 Data transfer rate: 1Gbps Application: indoor Channel output power: 60W Type of module: PoE power module Standard: IEEE 802.3af/at; IEEE 802.3bt |
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PD-9501GC/AC-US | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor Number of channels: 1 Data transfer rate: 1Gbps Application: indoor Channel output power: 60W Type of module: PoE power module Standard: IEEE 802.3af/at; IEEE 802.3bt |
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PD-9501GO-ET/AC | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 60W; Standard: IEEE 802.3af/at Number of channels: 1 Data transfer rate: 1Gbps Operating temperature: -40...65°C Application: outdoor Channel output power: 60W Type of module: PoE power module Standard: IEEE 802.3af/at IP rating: IP67 |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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PD-9601G/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 95W; Standard: IEEE 802.3af/at Data transfer rate: 1Gbps Application: indoor Standard: IEEE 802.3af/at Number of channels: 1 Channel output power: 95W Operating temperature: -10...45°C Type of module: PoE power module |
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| PD-AFATBT-TESTER | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE analyser; Ch: 1; 1Gbps; Standard: IEEE 802.3af/at; indoor Data transfer rate: 1Gbps Application: indoor Standard: IEEE 802.3af/at Number of channels: 1 Type of module: PoE analyser |
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| PD-IM-7504B | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; I2C,UART; 0÷50°C; Ch: 4; 72W; 725mA Interface: I2C; UART Number of channels: 4 Operating temperature: 0...50°C Maximum output current: 725mA Channel output power: 72W Type of development kit: evaluation Standard: IEEE 802.3af; IEEE 802.3at |
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| PD-IM-7604-4MH | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; I2C,UART; 0÷40°C; Ch: 8; 44÷57VDC; 72W; 725mA Interface: I2C; UART Supply voltage: 44...57V DC Number of channels: 8 Operating temperature: 0...40°C Maximum output current: 725mA Channel output power: 72W Type of development kit: evaluation Standard: IEEE 802.3af; IEEE 802.3at |
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| PD-IM-7604-4T4H | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; I2C,UART; 0÷40°C; Ch: 8; 44÷57VDC; 72W; 725mA Interface: I2C; UART Supply voltage: 44...57V DC Number of channels: 8 Operating temperature: 0...40°C Maximum output current: 725mA Channel output power: 72W Type of development kit: evaluation Standard: IEEE 802.3af; IEEE 802.3at |
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| PD-IM-7608M | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷40°C; Ch: 8; 32÷57VDC; 71.4W; 627mA Number of channels: 8 Maximum output current: 627mA Channel output power: 71.4W Type of development kit: evaluation Standard: IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt; PoH; UPoE Operating temperature: 0...40°C Supply voltage: 32...57V DC |
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| PD-IM-7608M-2 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷40°C; Ch: 8; 32÷57VDC; 71.4W; 627mA Number of channels: 8 Maximum output current: 627mA Channel output power: 71.4W Type of development kit: evaluation Standard: IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt; PoH; UPoE Operating temperature: 0...40°C Supply voltage: 32...57V DC |
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PD-OUT/MBK/ET | MICROCHIP (MICROSEMI) |
Category: Accessories for Communication Modules Description: Holder; outdoor,indoor; PD-9001GO-ET/AC,PD-9501GO-ET/AC Related items: PD-9001GO-ET/AC; PD-9501GO-ET/AC Type of communications modules accessories: holder Application: indoor; outdoor |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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PD-OUT/SP11 | MICROCHIP (MICROSEMI) |
Category: Accessories for Communication Modules Description: Adapter; ETHERNET; Ch: 1; 1Gbps Number of channels: 1 Transfer rate: 1Gbps Type of communications modules accessories: adapter Kind of module: ETHERNET |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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PD-3501G/AC-EU | MICROCHIP (MICROSEMI) |
Category: PoE Power Supplies Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af Number of channels: 1 Operating temperature: 0...40°C Application: indoor Data transfer rate: 1Gbps Channel output power: 15.4W Type of module: PoE power module Standard: IEEE 802.3af кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 7-14 дні (днів) |
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| PD69100R-023950 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE controller Type of integrated circuit: PoE controller |
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| PD69100R-026515 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE controller Type of integrated circuit: PoE controller |
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| PD69100R-026611 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE controller Type of integrated circuit: PoE controller |
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| PD69100R-023950 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE controller Type of integrated circuit: PoE controller кількість в упаковці: 490 шт |
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| PD69100R-026515 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE controller Type of integrated circuit: PoE controller кількість в упаковці: 490 шт |
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| MSMBJ6.0CAE3 |
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Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
кількість в упаковці: 1 шт
товар відсутній
| MSMBJ8.5CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
товар відсутній
| MSMBJ8.5CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 9.9V; 41.7A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.9V
Max. forward impulse current: 41.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 10µA
кількість в упаковці: 1 шт
товар відсутній
| MSMBJ9.0A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
товар відсутній
| MSMBJ9.0A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10.6V; 39A; unidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10.6V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 5µA
кількість в упаковці: 1 шт
товар відсутній
| MSMCGLCE18A |
|
Виробник: MICROCHIP (MICROSEMI)
MSMCGLCE18A Unidirectional SMD transil diodes
MSMCGLCE18A Unidirectional SMD transil diodes
товар відсутній
| MSMCJ17CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
товар відсутній
| MSMCJ17CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 19.9V; 53.3A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 53.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
| MSMCJ45CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
товар відсутній
| MSMCJ45CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 52.6V; 20.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 52.6V
Max. forward impulse current: 20.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
| MSMCJ8.0CA |
|
Виробник: MICROCHIP (MICROSEMI)
MSMCJ8.0CA Bidirectional SMD transil diodes
MSMCJ8.0CA Bidirectional SMD transil diodes
товар відсутній
| MSMLJ100CA |
|
Виробник: MICROCHIP (MICROSEMI)
MSMLJ100CA Bidirectional SMD transil diodes
MSMLJ100CA Bidirectional SMD transil diodes
товар відсутній
| MSMLJ12CAe3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
товар відсутній
| MSMLJ12CAe3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 14V; 150.6A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 12V
Breakdown voltage: 14V
Max. forward impulse current: 150.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 5µA
кількість в упаковці: 1 шт
товар відсутній
| MSMLJ15AE3TR |
Виробник: MICROCHIP (MICROSEMI)
MSMLJ15AE3TR Unidirectional SMD transil diodes
MSMLJ15AE3TR Unidirectional SMD transil diodes
товар відсутній
| MSMLJ170CA |
|
Виробник: MICROCHIP (MICROSEMI)
MSMLJ170CA Bidirectional SMD transil diodes
MSMLJ170CA Bidirectional SMD transil diodes
товар відсутній
| MSMLJ24CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
товар відсутній
| MSMLJ24CA |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 28.1V; 77.2A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
кількість в упаковці: 1 шт
товар відсутній
| MSMLJ40A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
товар відсутній
| MSMLJ40A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
кількість в упаковці: 1 шт
товар відсутній
| MSMLJ40CAE3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
товар відсутній
| MSMLJ40CAE3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 46.8V; 46.4A; bidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 40V
Breakdown voltage: 46.8V
Max. forward impulse current: 46.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 2µA
кількість в упаковці: 1 шт
товар відсутній
| MSMLJ45Ae3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB
Mounting: SMD
Max. off-state voltage: 45V
Breakdown voltage: 52.7V
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 41.2A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB
Mounting: SMD
Max. off-state voltage: 45V
Breakdown voltage: 52.7V
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 41.2A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
товар відсутній
| MSMLJ45Ae3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB
Mounting: SMD
Max. off-state voltage: 45V
Breakdown voltage: 52.7V
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 41.2A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 52.7V; 41.2A; unidirectional; ±5%; DO214AB
Mounting: SMD
Max. off-state voltage: 45V
Breakdown voltage: 52.7V
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 41.2A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
товар відсутній
| MSMLJ51Ae3 |
|
Виробник: MICROCHIP (MICROSEMI)
MSMLJ51AE3 Unidirectional SMD transil diodes
MSMLJ51AE3 Unidirectional SMD transil diodes
товар відсутній
| MSMLJ51CAe3 |
|
Виробник: MICROCHIP (MICROSEMI)
MSMLJ51CAE3 Bidirectional SMD transil diodes
MSMLJ51CAE3 Bidirectional SMD transil diodes
товар відсутній
| MSMLJ54CAE3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
товар відсутній
| MSMLJ54CAE3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 3kW; 63.2V; 34.4A; bidirectional; ±5%; DO214AB
Leakage current: 2µA
Case: DO214AB
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: SMD
Max. forward impulse current: 34.4A
Peak pulse power dissipation: 3kW
Tolerance: ±5%
Max. off-state voltage: 54V
Breakdown voltage: 63.2V
товар відсутній
| MSMLJ58CAE3 |
|
Виробник: MICROCHIP (MICROSEMI)
MSMLJ58CAE3 Bidirectional SMD transil diodes
MSMLJ58CAE3 Bidirectional SMD transil diodes
товар відсутній
| MSMLJ6.0CA |
|
Виробник: MICROCHIP (MICROSEMI)
MSMLJ6.0CA Bidirectional SMD transil diodes
MSMLJ6.0CA Bidirectional SMD transil diodes
товар відсутній
| MXSMCJ24Ae3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1079.99 грн |
| 3+ | 944.62 грн |
| 5+ | 911.55 грн |
| MXSMCJ24Ae3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1295.99 грн |
| 3+ | 1177.14 грн |
| 5+ | 1093.86 грн |
| PCIE-ROOTPORT-AD |
Виробник: MICROCHIP (MICROSEMI)
Category: Microchip development kits
Description: Dev.kit: Microchip; quick start board,power supply
Type of development kit: Microchip
Interface: PHY
Kind of connector: PCIe
Kit contents: power supply; quick start board
Category: Microchip development kits
Description: Dev.kit: Microchip; quick start board,power supply
Type of development kit: Microchip
Interface: PHY
Kind of connector: PCIe
Kit contents: power supply; quick start board
товар відсутній
| PCIE-ROOTPORT-AD |
Виробник: MICROCHIP (MICROSEMI)
Category: Microchip development kits
Description: Dev.kit: Microchip; quick start board,power supply
Type of development kit: Microchip
Interface: PHY
Kind of connector: PCIe
Kit contents: power supply; quick start board
кількість в упаковці: 1 шт
Category: Microchip development kits
Description: Dev.kit: Microchip; quick start board,power supply
Type of development kit: Microchip
Interface: PHY
Kind of connector: PCIe
Kit contents: power supply; quick start board
кількість в упаковці: 1 шт
товар відсутній
| PD-3501G/AC-EU |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af
Number of channels: 1
Operating temperature: 0...40°C
Application: indoor
Data transfer rate: 1Gbps
Channel output power: 15.4W
Type of module: PoE power module
Standard: IEEE 802.3af
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af
Number of channels: 1
Operating temperature: 0...40°C
Application: indoor
Data transfer rate: 1Gbps
Channel output power: 15.4W
Type of module: PoE power module
Standard: IEEE 802.3af
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3922.02 грн |
| PD-9001GI/DC |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; Usup: 20÷60VDC; 30W; IP30; indoor
Number of channels: 1
Operating temperature: -40...75°C
Application: indoor
Supply voltage: 20...60V DC
Data transfer rate: 1Gbps
Channel output power: 30W
Type of module: PoE power module
Standard: IEEE 802.3af/at
IP rating: IP30
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; Usup: 20÷60VDC; 30W; IP30; indoor
Number of channels: 1
Operating temperature: -40...75°C
Application: indoor
Supply voltage: 20...60V DC
Data transfer rate: 1Gbps
Channel output power: 30W
Type of module: PoE power module
Standard: IEEE 802.3af/at
IP rating: IP30
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17055.29 грн |
| PD-9001GO-ET/AC |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Type of module: PoE power module
Number of channels: 1
Data transfer rate: 1Gbps
Channel output power: 30W
Standard: IEEE 802.3af/at
IP rating: IP67
Application: outdoor
Operating temperature: -40...65°C
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Type of module: PoE power module
Number of channels: 1
Data transfer rate: 1Gbps
Channel output power: 30W
Standard: IEEE 802.3af/at
IP rating: IP67
Application: outdoor
Operating temperature: -40...65°C
товар відсутній
| PD-9001GR/AT/AC-EU |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Type of module: PoE power module
Number of channels: 1
Data transfer rate: 1Gbps
Channel output power: 30W
Standard: IEEE 802.3af/at
Application: indoor
Operating temperature: -20...40°C
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Type of module: PoE power module
Number of channels: 1
Data transfer rate: 1Gbps
Channel output power: 30W
Standard: IEEE 802.3af/at
Application: indoor
Operating temperature: -20...40°C
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6246.12 грн |
| PD-9001GR/AT/AC-US |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Type of module: PoE power module
Number of channels: 1
Data transfer rate: 1Gbps
Channel output power: 30W
Standard: IEEE 802.3af/at
Application: indoor
Operating temperature: -20...40°C
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 30W; Standard: IEEE 802.3af/at
Type of module: PoE power module
Number of channels: 1
Data transfer rate: 1Gbps
Channel output power: 30W
Standard: IEEE 802.3af/at
Application: indoor
Operating temperature: -20...40°C
товар відсутній
| PD-9501GC/AC-EU |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor
Number of channels: 1
Data transfer rate: 1Gbps
Application: indoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at; IEEE 802.3bt
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor
Number of channels: 1
Data transfer rate: 1Gbps
Application: indoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at; IEEE 802.3bt
товар відсутній
| PD-9501GC/AC-US |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor
Number of channels: 1
Data transfer rate: 1Gbps
Application: indoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at; IEEE 802.3bt
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; indoor
Number of channels: 1
Data transfer rate: 1Gbps
Application: indoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at; IEEE 802.3bt
товар відсутній
| PD-9501GO-ET/AC |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; Standard: IEEE 802.3af/at
Number of channels: 1
Data transfer rate: 1Gbps
Operating temperature: -40...65°C
Application: outdoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at
IP rating: IP67
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 60W; Standard: IEEE 802.3af/at
Number of channels: 1
Data transfer rate: 1Gbps
Operating temperature: -40...65°C
Application: outdoor
Channel output power: 60W
Type of module: PoE power module
Standard: IEEE 802.3af/at
IP rating: IP67
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17380.45 грн |
| 3+ | 15572.51 грн |
| PD-9601G/AC-EU |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 95W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Application: indoor
Standard: IEEE 802.3af/at
Number of channels: 1
Channel output power: 95W
Operating temperature: -10...45°C
Type of module: PoE power module
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 95W; Standard: IEEE 802.3af/at
Data transfer rate: 1Gbps
Application: indoor
Standard: IEEE 802.3af/at
Number of channels: 1
Channel output power: 95W
Operating temperature: -10...45°C
Type of module: PoE power module
товар відсутній
| PD-AFATBT-TESTER |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE analyser; Ch: 1; 1Gbps; Standard: IEEE 802.3af/at; indoor
Data transfer rate: 1Gbps
Application: indoor
Standard: IEEE 802.3af/at
Number of channels: 1
Type of module: PoE analyser
Category: PoE Power Supplies
Description: PoE analyser; Ch: 1; 1Gbps; Standard: IEEE 802.3af/at; indoor
Data transfer rate: 1Gbps
Application: indoor
Standard: IEEE 802.3af/at
Number of channels: 1
Type of module: PoE analyser
товар відсутній
| PD-IM-7504B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; I2C,UART; 0÷50°C; Ch: 4; 72W; 725mA
Interface: I2C; UART
Number of channels: 4
Operating temperature: 0...50°C
Maximum output current: 725mA
Channel output power: 72W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; I2C,UART; 0÷50°C; Ch: 4; 72W; 725mA
Interface: I2C; UART
Number of channels: 4
Operating temperature: 0...50°C
Maximum output current: 725mA
Channel output power: 72W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at
товар відсутній
| PD-IM-7604-4MH |
|
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; I2C,UART; 0÷40°C; Ch: 8; 44÷57VDC; 72W; 725mA
Interface: I2C; UART
Supply voltage: 44...57V DC
Number of channels: 8
Operating temperature: 0...40°C
Maximum output current: 725mA
Channel output power: 72W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; I2C,UART; 0÷40°C; Ch: 8; 44÷57VDC; 72W; 725mA
Interface: I2C; UART
Supply voltage: 44...57V DC
Number of channels: 8
Operating temperature: 0...40°C
Maximum output current: 725mA
Channel output power: 72W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at
товар відсутній
| PD-IM-7604-4T4H |
|
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; I2C,UART; 0÷40°C; Ch: 8; 44÷57VDC; 72W; 725mA
Interface: I2C; UART
Supply voltage: 44...57V DC
Number of channels: 8
Operating temperature: 0...40°C
Maximum output current: 725mA
Channel output power: 72W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; I2C,UART; 0÷40°C; Ch: 8; 44÷57VDC; 72W; 725mA
Interface: I2C; UART
Supply voltage: 44...57V DC
Number of channels: 8
Operating temperature: 0...40°C
Maximum output current: 725mA
Channel output power: 72W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at
товар відсутній
| PD-IM-7608M |
|
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷40°C; Ch: 8; 32÷57VDC; 71.4W; 627mA
Number of channels: 8
Maximum output current: 627mA
Channel output power: 71.4W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt; PoH; UPoE
Operating temperature: 0...40°C
Supply voltage: 32...57V DC
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷40°C; Ch: 8; 32÷57VDC; 71.4W; 627mA
Number of channels: 8
Maximum output current: 627mA
Channel output power: 71.4W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt; PoH; UPoE
Operating temperature: 0...40°C
Supply voltage: 32...57V DC
товар відсутній
| PD-IM-7608M-2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷40°C; Ch: 8; 32÷57VDC; 71.4W; 627mA
Number of channels: 8
Maximum output current: 627mA
Channel output power: 71.4W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt; PoH; UPoE
Operating temperature: 0...40°C
Supply voltage: 32...57V DC
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷40°C; Ch: 8; 32÷57VDC; 71.4W; 627mA
Number of channels: 8
Maximum output current: 627mA
Channel output power: 71.4W
Type of development kit: evaluation
Standard: IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt; PoH; UPoE
Operating temperature: 0...40°C
Supply voltage: 32...57V DC
товар відсутній
| PD-OUT/MBK/ET |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Accessories for Communication Modules
Description: Holder; outdoor,indoor; PD-9001GO-ET/AC,PD-9501GO-ET/AC
Related items: PD-9001GO-ET/AC; PD-9501GO-ET/AC
Type of communications modules accessories: holder
Application: indoor; outdoor
Category: Accessories for Communication Modules
Description: Holder; outdoor,indoor; PD-9001GO-ET/AC,PD-9501GO-ET/AC
Related items: PD-9001GO-ET/AC; PD-9501GO-ET/AC
Type of communications modules accessories: holder
Application: indoor; outdoor
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3983.18 грн |
| 3+ | 3697.23 грн |
| PD-OUT/SP11 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Accessories for Communication Modules
Description: Adapter; ETHERNET; Ch: 1; 1Gbps
Number of channels: 1
Transfer rate: 1Gbps
Type of communications modules accessories: adapter
Kind of module: ETHERNET
Category: Accessories for Communication Modules
Description: Adapter; ETHERNET; Ch: 1; 1Gbps
Number of channels: 1
Transfer rate: 1Gbps
Type of communications modules accessories: adapter
Kind of module: ETHERNET
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5958.9 грн |
| 3+ | 5473.6 грн |
| PD-3501G/AC-EU |
|
Виробник: MICROCHIP (MICROSEMI)
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af
Number of channels: 1
Operating temperature: 0...40°C
Application: indoor
Data transfer rate: 1Gbps
Channel output power: 15.4W
Type of module: PoE power module
Standard: IEEE 802.3af
кількість в упаковці: 1 шт
Category: PoE Power Supplies
Description: PoE power module; Ch: 1; 1Gbps; 15.4W; Standard: IEEE 802.3af
Number of channels: 1
Operating temperature: 0...40°C
Application: indoor
Data transfer rate: 1Gbps
Channel output power: 15.4W
Type of module: PoE power module
Standard: IEEE 802.3af
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4706.42 грн |
| PD69100R-023950 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
товар відсутній
| PD69100R-026515 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
товар відсутній
| PD69100R-026611 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
товар відсутній
| PD69100R-023950 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
кількість в упаковці: 490 шт
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
кількість в упаковці: 490 шт
товар відсутній
| PD69100R-026515 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
кількість в упаковці: 490 шт
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE controller
Type of integrated circuit: PoE controller
кількість в упаковці: 490 шт
товар відсутній