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DG10X06T1 DG10X06T1 STARPOWER SEMICONDUCTOR DG10X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
товар відсутній
DG10X06T1 DG10X06T1 STARPOWER SEMICONDUCTOR DG10X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
кількість в упаковці: 1 шт
товар відсутній
DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR DG10X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
3+130.08 грн
8+ 101.71 грн
22+ 96.18 грн
Мінімальне замовлення: 3
DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR DG10X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 7-14 дні (днів)
2+187.78 грн
3+ 162.1 грн
8+ 122.06 грн
22+ 115.41 грн
Мінімальне замовлення: 2
DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR DG120X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+792.85 грн
2+ 516.88 грн
5+ 488.51 грн
DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR DG120X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 7-14 дні (днів)
1+951.42 грн
2+ 644.11 грн
5+ 586.21 грн
DG15X06T1 DG15X06T1 STARPOWER SEMICONDUCTOR DG15X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
4+111.03 грн
5+ 92.72 грн
12+ 68.5 грн
32+ 65.04 грн
Мінімальне замовлення: 4
DG15X06T1 DG15X06T1 STARPOWER SEMICONDUCTOR DG15X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 73 шт:
термін постачання 7-14 дні (днів)
3+133.23 грн
5+ 115.54 грн
12+ 82.2 грн
32+ 78.05 грн
Мінімальне замовлення: 3
DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR DG15X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
2+198.96 грн
3+ 166.06 грн
7+ 124.55 грн
18+ 117.63 грн
Мінімальне замовлення: 2
DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR DG15X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 7-14 дні (днів)
2+238.75 грн
3+ 206.94 грн
7+ 149.46 грн
18+ 141.15 грн
Мінімальне замовлення: 2
DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR DG20X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 61 шт:
термін постачання 21-30 дні (днів)
3+125.19 грн
5+ 104.48 грн
11+ 78.19 грн
29+ 74.04 грн
Мінімальне замовлення: 3
DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR DG20X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 61 шт:
термін постачання 7-14 дні (днів)
2+150.22 грн
5+ 130.2 грн
11+ 93.83 грн
29+ 88.84 грн
Мінімальне замовлення: 2
DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR DG20X06T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
3+116.25 грн
10+ 86.49 грн
Мінімальне замовлення: 3
DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR DG20X06T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 7-14 дні (днів)
2+167.21 грн
3+ 144.86 грн
10+ 103.79 грн
26+ 97.98 грн
Мінімальне замовлення: 2
DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR DG25X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
2+264.53 грн
3+ 220.73 грн
5+ 176.44 грн
Мінімальне замовлення: 2
DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR DG25X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 7-14 дні (днів)
1+317.44 грн
3+ 275.06 грн
5+ 211.73 грн
13+ 200.11 грн
DG30X07T2 STARPOWER SEMICONDUCTOR DG30X07T2 THT IGBT transistors
товар відсутній
DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR DG40X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
2+361.4 грн
3+ 302.38 грн
4+ 224.88 грн
10+ 212.42 грн
Мінімальне замовлення: 2
DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR DG40X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
кількість в упаковці: 1 шт
на замовлення 59 шт:
термін постачання 7-14 дні (днів)
1+433.68 грн
3+ 376.81 грн
4+ 269.85 грн
10+ 254.91 грн
DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR DG50Q12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
1+628.92 грн
2+ 390.25 грн
6+ 368.8 грн
DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR DG50Q12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)
1+754.7 грн
2+ 486.31 грн
6+ 442.56 грн
DG50X07T2 STARPOWER SEMICONDUCTOR DG50X07T2 THT IGBT transistors
на замовлення 56 шт:
термін постачання 7-14 дні (днів)
1+321.02 грн
5+ 198.45 грн
14+ 187.65 грн
DG50X12T2 DG50X12T2 STARPOWER SEMICONDUCTOR DG50X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
1+564.83 грн
3+ 350.12 грн
7+ 330.75 грн
DG50X12T2 DG50X12T2 STARPOWER SEMICONDUCTOR DG50X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
кількість в упаковці: 1 шт
на замовлення 78 шт:
термін постачання 7-14 дні (днів)
1+677.8 грн
3+ 436.3 грн
7+ 396.89 грн
DG75H12T2 STARPOWER SEMICONDUCTOR DG75H12T2 THT IGBT transistors
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+779.74 грн
3+ 474.11 грн
6+ 448.37 грн
DG75X07T2L STARPOWER SEMICONDUCTOR DG75X07T2L THT IGBT transistors
на замовлення 36 шт:
термін постачання 7-14 дні (днів)
1+565.13 грн
3+ 350.4 грн
8+ 331.3 грн
DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR DG75X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+738.45 грн
2+ 458.06 грн
3+ 457.37 грн
5+ 432.46 грн
DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR DG75X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 7-14 дні (днів)
1+886.15 грн
2+ 570.81 грн
3+ 548.84 грн
5+ 518.95 грн
GD1000HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD1000HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
товар відсутній
GD100FFX170C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFX170C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100FFX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100HFU120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HFU120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
товар відсутній
GD100HFX170C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFX170C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HFX65C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFX65C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
товар відсутній
GD100PIX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100PIX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100SGY120D6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100SGY120D6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
GD10PJX65F1S STARPOWER SEMICONDUCTOR GD10PJX65F1S IGBT modules
товар відсутній
GD10PJX65L2S STARPOWER SEMICONDUCTOR GD10PJX65L2S IGBT modules
товар відсутній
DG10X06T1 DG10X06T1.pdf
DG10X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
товар відсутній
DG10X06T1 DG10X06T1.pdf
DG10X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
кількість в упаковці: 1 шт
товар відсутній
DG10X12T2 DG10X12T2.pdf
DG10X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+130.08 грн
8+ 101.71 грн
22+ 96.18 грн
Мінімальне замовлення: 3
DG10X12T2 DG10X12T2.pdf
DG10X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+187.78 грн
3+ 162.1 грн
8+ 122.06 грн
22+ 115.41 грн
Мінімальне замовлення: 2
DG120X07T2 DG120X07T2.pdf
DG120X07T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+792.85 грн
2+ 516.88 грн
5+ 488.51 грн
DG120X07T2 DG120X07T2.pdf
DG120X07T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+951.42 грн
2+ 644.11 грн
5+ 586.21 грн
DG15X06T1 DG15X06T1.pdf
DG15X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+111.03 грн
5+ 92.72 грн
12+ 68.5 грн
32+ 65.04 грн
Мінімальне замовлення: 4
DG15X06T1 DG15X06T1.pdf
DG15X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 73 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
3+133.23 грн
5+ 115.54 грн
12+ 82.2 грн
32+ 78.05 грн
Мінімальне замовлення: 3
DG15X12T2 DG15X12T2.pdf
DG15X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+198.96 грн
3+ 166.06 грн
7+ 124.55 грн
18+ 117.63 грн
Мінімальне замовлення: 2
DG15X12T2 DG15X12T2.pdf
DG15X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+238.75 грн
3+ 206.94 грн
7+ 149.46 грн
18+ 141.15 грн
Мінімальне замовлення: 2
DG20X06T1 DG20X06T1.pdf
DG20X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 61 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+125.19 грн
5+ 104.48 грн
11+ 78.19 грн
29+ 74.04 грн
Мінімальне замовлення: 3
DG20X06T1 DG20X06T1.pdf
DG20X06T1
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 61 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+150.22 грн
5+ 130.2 грн
11+ 93.83 грн
29+ 88.84 грн
Мінімальне замовлення: 2
DG20X06T2 DG20X06T2.pdf
DG20X06T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+116.25 грн
10+ 86.49 грн
Мінімальне замовлення: 3
DG20X06T2 DG20X06T2.pdf
DG20X06T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
2+167.21 грн
3+ 144.86 грн
10+ 103.79 грн
26+ 97.98 грн
Мінімальне замовлення: 2
DG25X12T2 DG25X12T2.pdf
DG25X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+264.53 грн
3+ 220.73 грн
5+ 176.44 грн
Мінімальне замовлення: 2
DG25X12T2 DG25X12T2.pdf
DG25X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+317.44 грн
3+ 275.06 грн
5+ 211.73 грн
13+ 200.11 грн
DG30X07T2
Виробник: STARPOWER SEMICONDUCTOR
DG30X07T2 THT IGBT transistors
товар відсутній
DG40X12T2 DG40X12T2.pdf
DG40X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+361.4 грн
3+ 302.38 грн
4+ 224.88 грн
10+ 212.42 грн
Мінімальне замовлення: 2
DG40X12T2 DG40X12T2.pdf
DG40X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
кількість в упаковці: 1 шт
на замовлення 59 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+433.68 грн
3+ 376.81 грн
4+ 269.85 грн
10+ 254.91 грн
DG50Q12T2 DG50Q12T2.pdf
DG50Q12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+628.92 грн
2+ 390.25 грн
6+ 368.8 грн
DG50Q12T2 DG50Q12T2.pdf
DG50Q12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
кількість в упаковці: 1 шт
на замовлення 70 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+754.7 грн
2+ 486.31 грн
6+ 442.56 грн
DG50X07T2
Виробник: STARPOWER SEMICONDUCTOR
DG50X07T2 THT IGBT transistors
на замовлення 56 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+321.02 грн
5+ 198.45 грн
14+ 187.65 грн
DG50X12T2 DG50X12T2.pdf
DG50X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+564.83 грн
3+ 350.12 грн
7+ 330.75 грн
DG50X12T2 DG50X12T2.pdf
DG50X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
кількість в упаковці: 1 шт
на замовлення 78 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+677.8 грн
3+ 436.3 грн
7+ 396.89 грн
DG75H12T2
Виробник: STARPOWER SEMICONDUCTOR
DG75H12T2 THT IGBT transistors
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+779.74 грн
3+ 474.11 грн
6+ 448.37 грн
DG75X07T2L
Виробник: STARPOWER SEMICONDUCTOR
DG75X07T2L THT IGBT transistors
на замовлення 36 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+565.13 грн
3+ 350.4 грн
8+ 331.3 грн
DG75X12T2 DG75X12T2.pdf
DG75X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+738.45 грн
2+ 458.06 грн
3+ 457.37 грн
5+ 432.46 грн
DG75X12T2 DG75X12T2.pdf
DG75X12T2
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+886.15 грн
2+ 570.81 грн
3+ 548.84 грн
5+ 518.95 грн
GD1000HFX170P2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD1000HFX170P2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
товар відсутній
GD100FFX170C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFX170C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100FFX65C5S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFX65C5S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100FFY120C5S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFY120C5S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100FFY120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100FFY120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100HFU120C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HFU120C2S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
GD100HFU120C8S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HFU120C8S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
товар відсутній
GD100HFX170C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFX170C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HFX65C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFX65C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HFY120C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100HFY120C1S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
GD100HHU120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
GD100HHU120C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100MLX65L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100MLX65L3S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
товар відсутній
GD100PIX65C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100PIX65C6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100PIY120C6SN
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100PIY120C6SN
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
GD100SGY120D6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
GD100SGY120D6S
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
GD10PJX65F1S
Виробник: STARPOWER SEMICONDUCTOR
GD10PJX65F1S IGBT modules
товар відсутній
GD10PJX65L2S
Виробник: STARPOWER SEMICONDUCTOR
GD10PJX65L2S IGBT modules
товар відсутній
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