Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (289) > Сторінка 5 з 5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD600SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V |
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| GD600SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD650HFX170P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A Max. off-state voltage: 1.7kV Case: P1.0 Technology: Trench FS IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 650A Pulsed collector current: 1.3kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge |
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| GD650HFX170P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A Max. off-state voltage: 1.7kV Case: P1.0 Technology: Trench FS IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 650A Pulsed collector current: 1.3kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge кількість в упаковці: 9 шт |
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| GD75FFX170C6S | STARPOWER SEMICONDUCTOR | GD75FFX170C6S IGBT modules |
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| GD75FFX65C5S | STARPOWER SEMICONDUCTOR | GD75FFX65C5S IGBT modules |
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| GD75FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 150A Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C5 45mm Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor |
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| GD75FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 150A Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C5 45mm Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor кількість в упаковці: 12 шт |
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| GD75FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 150A Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor |
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| GD75FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 150A Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor кількість в упаковці: 10 шт |
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| GD75FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2 Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: L3.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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| GD75FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2 Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: L3.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 16 шт |
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| GD75HFU120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Case: C1 34mm Collector current: 75A Pulsed collector current: 150A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V |
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| GD75HFU120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Case: C1 34mm Collector current: 75A Pulsed collector current: 150A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V кількість в упаковці: 24 шт |
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| GD75HFX170C1S | STARPOWER SEMICONDUCTOR | GD75HFX170C1S IGBT modules |
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| GD75HFX65C1S | STARPOWER SEMICONDUCTOR | GD75HFX65C1S IGBT modules |
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| GD75HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Pulsed collector current: 150A Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C1 34mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD75HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A Pulsed collector current: 150A Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C1 34mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 1 шт |
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| GD75HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Collector current: 75A Case: C5 45mm Gate-emitter voltage: ±20V Pulsed collector current: 150A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: H-bridge Mechanical mounting: screw Type of module: IGBT |
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| GD75HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Collector current: 75A Case: C5 45mm Gate-emitter voltage: ±20V Pulsed collector current: 150A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: H-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 12 шт |
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| GD75MLX65L3S | STARPOWER SEMICONDUCTOR | GD75MLX65L3S IGBT modules |
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| GD75PIX65C6S | STARPOWER SEMICONDUCTOR | GD75PIX65C6S IGBT modules |
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| GD75PIY120C6SN | STARPOWER SEMICONDUCTOR | GD75PIY120C6SN IGBT modules |
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| GD800HFX170C3S | STARPOWER SEMICONDUCTOR | GD800HFX170C3S IGBT modules |
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| GD800HFY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A Pulsed collector current: 1.6kA Collector current: 800A Gate-emitter voltage: ±20V Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C3 130mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD800HFY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A Pulsed collector current: 1.6kA Collector current: 800A Gate-emitter voltage: ±20V Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C3 130mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 8 шт |
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| GD800SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Gate-emitter voltage: ±20V Collector current: 800A Pulsed collector current: 1.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT x2 Case: C3 130mm Max. off-state voltage: 1.7kV Semiconductor structure: common gate; transistor/transistor |
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| GD800SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Gate-emitter voltage: ±20V Collector current: 800A Pulsed collector current: 1.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT x2 Case: C3 130mm Max. off-state voltage: 1.7kV Semiconductor structure: common gate; transistor/transistor кількість в упаковці: 8 шт |
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| GD80TLQ120F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2 Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Case: F1.2 Collector current: 80A Pulsed collector current: 160A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
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| GD80TLQ120F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2 Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Case: F1.2 Collector current: 80A Pulsed collector current: 160A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 25 шт |
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| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 9 шт |
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| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm On-state resistance: 15mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 120A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: -4...20V Topology: MOSFET half-bridge Pulsed drain current: 548A |
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| MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm On-state resistance: 15mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 120A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: -4...20V Topology: MOSFET half-bridge Pulsed drain current: 548A кількість в упаковці: 12 шт |
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| MD15FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W Technology: SiC Power dissipation: 101W Semiconductor structure: transistor/transistor Case: L2 Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.12Ω Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: -4...22V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 77A |
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| MD15FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W Technology: SiC Power dissipation: 101W Semiconductor structure: transistor/transistor Case: L2 Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.12Ω Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: -4...22V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 77A кількість в упаковці: 24 шт |
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| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 822A Case: C2 62mm |
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| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 822A Case: C2 62mm кількість в упаковці: 6 шт |
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| MD300HFC170C2S | STARPOWER SEMICONDUCTOR | MD300HFC170C2S Transistor modules MOSFET |
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| MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 On-state resistance: 7.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 300A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA |
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| MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 On-state resistance: 7.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 300A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA кількість в упаковці: 12 шт |
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| MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm On-state resistance: 7.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 300A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA |
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| MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm On-state resistance: 7.5mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 300A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA кількість в упаковці: 12 шт |
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| MD30FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W Technology: SiC Power dissipation: 203W Semiconductor structure: transistor/transistor Case: L2 Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 60mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: -4...22V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 154A |
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| MD30FSR120L2SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W Technology: SiC Power dissipation: 203W Semiconductor structure: transistor/transistor Case: L2 Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 60mΩ Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Gate-source voltage: -4...22V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 154A кількість в упаковці: 12 шт |
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| MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm On-state resistance: 5.8mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 400A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.664kA |
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| MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm On-state resistance: 5.8mΩ Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Drain current: 400A Drain-source voltage: 1.2kV Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.664kA кількість в упаковці: 12 шт |
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| MD75FSC120L3SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 75A; L3; Press-in PCB; 277W Case: L3 Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 75A On-state resistance: 25.6mΩ Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...15V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A |
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| MD75FSC120L3SF | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 75A; L3; Press-in PCB; 277W Case: L3 Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 75A On-state resistance: 25.6mΩ Power dissipation: 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -4...15V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 250A кількість в упаковці: 16 шт |
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| GD600SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD650HFX170P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 650A
Pulsed collector current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 650A
Pulsed collector current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
товар відсутній
| GD650HFX170P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 650A
Pulsed collector current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
кількість в упаковці: 9 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 650A
Pulsed collector current: 1.3kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
кількість в упаковці: 9 шт
товар відсутній
| GD75FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C5 45mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C5 45mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній
| GD75FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C5 45mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C5 45mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 12 шт
товар відсутній
| GD75FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
товар відсутній
| GD75FFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
товар відсутній
| GD75FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
| GD75FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 16 шт
товар відсутній
| GD75HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: C1 34mm
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: C1 34mm
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
товар відсутній
| GD75HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: C1 34mm
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Case: C1 34mm
Collector current: 75A
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
кількість в упаковці: 24 шт
товар відсутній
| GD75HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C1 34mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C1 34mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD75HFY120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C1 34mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C1 34mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 1 шт
товар відсутній
| GD75HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 75A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 75A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| GD75HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 75A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 75A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 12 шт
товар відсутній
| GD800HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Pulsed collector current: 1.6kA
Collector current: 800A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Pulsed collector current: 1.6kA
Collector current: 800A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD800HFY120C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Pulsed collector current: 1.6kA
Collector current: 800A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Pulsed collector current: 1.6kA
Collector current: 800A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C3 130mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 8 шт
товар відсутній
| GD800SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
товар відсутній
| GD800SGX170C3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT x2
Case: C3 130mm
Max. off-state voltage: 1.7kV
Semiconductor structure: common gate; transistor/transistor
кількість в упаковці: 8 шт
товар відсутній
| GD80TLQ120F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Case: F1.2
Collector current: 80A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Case: F1.2
Collector current: 80A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| GD80TLQ120F1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Case: F1.2
Collector current: 80A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 25 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; F1.2
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Case: F1.2
Collector current: 80A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 25 шт
товар відсутній
| GD900HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
| GD900HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 9 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 9 шт
товар відсутній
| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 15mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 120A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 15mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 120A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
товар відсутній
| MD120HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 15mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 120A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 15mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 120A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
кількість в упаковці: 12 шт
товар відсутній
| MD15FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Technology: SiC
Power dissipation: 101W
Semiconductor structure: transistor/transistor
Case: L2
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.12Ω
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 77A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Technology: SiC
Power dissipation: 101W
Semiconductor structure: transistor/transistor
Case: L2
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.12Ω
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 77A
товар відсутній
| MD15FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Technology: SiC
Power dissipation: 101W
Semiconductor structure: transistor/transistor
Case: L2
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.12Ω
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 77A
кількість в упаковці: 24 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Technology: SiC
Power dissipation: 101W
Semiconductor structure: transistor/transistor
Case: L2
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.12Ω
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 77A
кількість в упаковці: 24 шт
товар відсутній
| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Case: C2 62mm
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Case: C2 62mm
товар відсутній
| MD200HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Case: C2 62mm
кількість в упаковці: 6 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Case: C2 62mm
кількість в упаковці: 6 шт
товар відсутній
| MD300HFC170C2S |
Виробник: STARPOWER SEMICONDUCTOR
MD300HFC170C2S Transistor modules MOSFET
MD300HFC170C2S Transistor modules MOSFET
товар відсутній
| MD300HFR120B3S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
товар відсутній
| MD300HFR120B3S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
кількість в упаковці: 12 шт
товар відсутній
| MD300HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
товар відсутній
| MD300HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 300A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
кількість в упаковці: 12 шт
товар відсутній
| MD30FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Technology: SiC
Power dissipation: 203W
Semiconductor structure: transistor/transistor
Case: L2
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 60mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 154A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Technology: SiC
Power dissipation: 203W
Semiconductor structure: transistor/transistor
Case: L2
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 60mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 154A
товар відсутній
| MD30FSR120L2SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Technology: SiC
Power dissipation: 203W
Semiconductor structure: transistor/transistor
Case: L2
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 60mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 154A
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Technology: SiC
Power dissipation: 203W
Semiconductor structure: transistor/transistor
Case: L2
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 60mΩ
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 154A
кількість в упаковці: 12 шт
товар відсутній
| MD400HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 5.8mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 400A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 5.8mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 400A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
товар відсутній
| MD400HFR120C2S |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 5.8mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 400A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
кількість в упаковці: 12 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
On-state resistance: 5.8mΩ
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Drain current: 400A
Drain-source voltage: 1.2kV
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
кількість в упаковці: 12 шт
товар відсутній
| MD75FSC120L3SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 75A; L3; Press-in PCB; 277W
Case: L3
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 75A
On-state resistance: 25.6mΩ
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...15V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 75A; L3; Press-in PCB; 277W
Case: L3
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 75A
On-state resistance: 25.6mΩ
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...15V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
товар відсутній
| MD75FSC120L3SF |
|
Виробник: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 75A; L3; Press-in PCB; 277W
Case: L3
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 75A
On-state resistance: 25.6mΩ
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...15V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
кількість в упаковці: 16 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 75A; L3; Press-in PCB; 277W
Case: L3
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 75A
On-state resistance: 25.6mΩ
Power dissipation: 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -4...15V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 250A
кількість в упаковці: 16 шт
товар відсутній