Продукція > STARPOWER SEMICONDUCTOR > Всі товари виробника STARPOWER SEMICONDUCTOR (286) > Сторінка 4 з 5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD400HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: C2 62mm Pulsed collector current: 800A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 400A кількість в упаковці: 10 шт |
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| GD400SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
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| GD400SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
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| GD400SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.7kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Trench FS IGBT Mechanical mounting: screw |
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| GD400SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.7kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
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| GD400SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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| GD400SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 12 шт |
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| GD40PIY120C5S | STARPOWER SEMICONDUCTOR | GD40PIY120C5S IGBT modules |
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| GD450HFX170C6S | STARPOWER SEMICONDUCTOR | GD450HFX170C6S IGBT modules |
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| GD450HFX65C6S | STARPOWER SEMICONDUCTOR | GD450HFX65C6S IGBT modules |
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| GD450HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Pulsed collector current: 900A Collector current: 450A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C2 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD450HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Pulsed collector current: 900A Collector current: 450A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C2 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 12 шт |
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| GD450HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Pulsed collector current: 900A Collector current: 450A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge |
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| GD450HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Pulsed collector current: 900A Collector current: 450A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge кількість в упаковці: 10 шт |
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| GD450HTX170C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 450A Case: C7 Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Technology: Trench FS IGBT Mechanical mounting: screw |
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| GD450HTX170C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 450A Case: C7 Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Technology: Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 5 шт |
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| GD450HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 450A Case: C7 Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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| GD450HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 450A Case: C7 Electrical mounting: Press-in PCB; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Technology: Advanced Trench FS IGBT Mechanical mounting: screw кількість в упаковці: 8 шт |
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| GD50FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: C5 45mm Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| GD50FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: C5 45mm Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| GD50FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: C5 45mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| GD50FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: C5 45mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| GD50FSX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1 Case: L2.1 Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT three-phase bridge OE output; NTC thermistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| GD50FSX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1 Case: L2.1 Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT three-phase bridge OE output; NTC thermistor Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge OE output; NTC thermistor |
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| GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Mechanical mounting: screw Type of module: IGBT Topology: IGBT three-phase bridge OE output; NTC thermistor кількість в упаковці: 16 шт |
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| GD50HFU120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Collector current: 50A Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V |
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| GD50HFU120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Collector current: 50A Pulsed collector current: 100A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V кількість в упаковці: 24 шт |
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| GD50HFX170C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Collector current: 50A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| GD50HFX170C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Collector current: 50A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw кількість в упаковці: 24 шт |
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| GD50HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| GD50HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw кількість в упаковці: 1 шт |
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| GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Collector current: 50A Case: C5 45mm Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: H-bridge Mechanical mounting: screw Type of module: IGBT |
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| GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Collector current: 50A Case: C5 45mm Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: H-bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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| GD50PIX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Case: C5 45mm Type of module: IGBT Technology: Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| GD50PIX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Case: C5 45mm Type of module: IGBT Technology: Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 1 шт |
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| GD50PIY120C5SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Case: C5 45mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| GD50PIY120C5SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Case: C5 45mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 12 шт |
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| GD50PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Case: C6 62mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw |
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| GD50PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Case: C6 62mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw кількість в упаковці: 10 шт |
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| GD50PJX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.0 Technology: Trench FS IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge |
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| GD50PJX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.0 Technology: Trench FS IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge кількість в упаковці: 1 шт |
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| GD600HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Case: C6 62mm Electrical mounting: Press-in PCB; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V |
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| GD600HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.7kV Case: C6 62mm Electrical mounting: Press-in PCB; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 10 шт |
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| GD600HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Case: C2 62mm Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V |
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| GD600HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Case: C2 62mm Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD600HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Case: C6 62mm Electrical mounting: Press-in PCB; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V |
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| GD600HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Case: C6 62mm Electrical mounting: Press-in PCB; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 10 шт |
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| GD600HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: C2 62mm Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V |
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| GD600HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: C2 62mm Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
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| GD600HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: C6 62mm Electrical mounting: Press-in PCB; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V |
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| GD600HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: C6 62mm Electrical mounting: Press-in PCB; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 10 шт |
товар відсутній |
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| GD600HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: P1.0 Electrical mounting: screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V |
товар відсутній |
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| GD600HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: P1.0 Electrical mounting: screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 9 шт |
товар відсутній |
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| GD600SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: NPT Ultra Fast IGBT Gate-emitter voltage: ±20V |
товар відсутній |
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| GD600SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: NPT Ultra Fast IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
товар відсутній |
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| GD600SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V |
товар відсутній |
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| GD600SGX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
товар відсутній |
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| GD600SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V |
товар відсутній |
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| GD600SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: C2 62mm Electrical mounting: screw Topology: single transistor Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V кількість в упаковці: 12 шт |
товар відсутній |
| GD400HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: C2 62mm
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 400A
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: C2 62mm
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 400A
кількість в упаковці: 10 шт
товар відсутній
| GD400SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
товар відсутній
| GD400SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
| GD400SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
| GD400SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
| GD400SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
| GD400SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
| GD450HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Collector current: 450A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Collector current: 450A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD450HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Collector current: 450A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Collector current: 450A
Gate-emitter voltage: ±20V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C2 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 12 шт
товар відсутній
| GD450HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Collector current: 450A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Collector current: 450A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
товар відсутній
| GD450HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Collector current: 450A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Pulsed collector current: 900A
Collector current: 450A
Gate-emitter voltage: ±20V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Type of module: IGBT
Case: C6 62mm
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
кількість в упаковці: 10 шт
товар відсутній
| GD450HTX170C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Trench FS IGBT
Mechanical mounting: screw
товар відсутній
| GD450HTX170C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 5 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 5 шт
товар відсутній
| GD450HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній
| GD450HTY120C7S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 8 шт
товар відсутній
| GD50FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: C5 45mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: C5 45mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| GD50FFX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: C5 45mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: C5 45mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| GD50FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| GD50FFY120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| GD50FSX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Case: L2.1
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Case: L2.1
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| GD50FSX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Case: L2.1
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Case: L2.1
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| GD50FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
товар відсутній
| GD50FSY120L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
кількість в упаковці: 16 шт
товар відсутній
| GD50HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
товар відсутній
| GD50HFU120C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Collector current: 50A
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
кількість в упаковці: 24 шт
товар відсутній
| GD50HFX170C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Collector current: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Collector current: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| GD50HFX170C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Collector current: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 24 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Collector current: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 24 шт
товар відсутній
| GD50HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товар відсутній
| GD50HFX65C1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Case: C1 34mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| GD50HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 50A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 50A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| GD50HHU120C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 50A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Collector current: 50A
Case: C5 45mm
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: H-bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
| GD50PIX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Case: C5 45mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Case: C5 45mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| GD50PIX65C5S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Case: C5 45mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Case: C5 45mm
Type of module: IGBT
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
| GD50PIY120C5SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| GD50PIY120C5SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 12 шт
товар відсутній
| GD50PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C6 62mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C6 62mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товар відсутній
| GD50PIY120C6SN |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C6 62mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C6 62mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 10 шт
товар відсутній
| GD50PJX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
товар відсутній
| GD50PJX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
товар відсутній
| GD600HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600HFX170C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
товар відсутній
| GD600HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600HFX65C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD600HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600HFX65C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
товар відсутній
| GD600HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600HFY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD600HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
товар відсутній
| GD600HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: P1.0
Electrical mounting: screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: P1.0
Electrical mounting: screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600HFY120P1S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: P1.0
Electrical mounting: screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 9 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: P1.0
Electrical mounting: screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 9 шт
товар відсутній
| GD600SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600SGU120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: NPT Ultra Fast IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD600SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600SGX170C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
| GD600SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній
| GD600SGY120C2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: C2 62mm
Electrical mounting: screw
Topology: single transistor
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній