Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3690) > Сторінка 21 з 62
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AS4C512M8D4-83BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Memory: 4Gb DRAM Clock frequency: 1.2GHz Operating temperature: -40...95°C Kind of memory: DDR4; SDRAM Operating voltage: 1.2V Mounting: SMD Case: FBGA78 Type of integrated circuit: DRAM memory Memory organisation: 512Mx8bit Access time: 14.16ns Kind of package: in-tray |
товар відсутній |
||||||||||||||||
AS4C512M8D4-83BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Memory: 4Gb DRAM Clock frequency: 1.2GHz Operating temperature: -40...95°C Kind of memory: DDR4; SDRAM Operating voltage: 1.2V Mounting: SMD Case: FBGA78 Type of integrated circuit: DRAM memory Memory organisation: 512Mx8bit Access time: 14.16ns Kind of package: reel |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BCN | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp - Tray |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C512M8D4-75BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.2V кількість в упаковці: 242 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BCNTR | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.2V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BIN | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp - Tray |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C512M8D4-75BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.2V кількість в упаковці: 242 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BINTR | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.2V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4-83BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M8D4-83BCN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.2 GHz, FBGA, 78 Pin(s) tariffCode: 85423231 DRAM-Ausführung: DDR4 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 4Gbit usEccn: EAR99 Versorgungsspannung, nom.: 1.2V Taktfrequenz, max.: 1.2GHz Betriebstemperatur, min.: 0°C euEccn: NLR Anzahl der Pins: 78Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 95°C Speicherkonfiguration: 512M x 8 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C512M8D4-83BCN | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Commercial Temp - Tray |
на замовлення 289 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C512M8D4-83BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Memory: 4Gb DRAM Clock frequency: 1.2GHz Operating temperature: 0...95°C Kind of memory: DDR4; SDRAM Operating voltage: 1.2V Mounting: SMD Case: FBGA78 Type of integrated circuit: DRAM memory Memory organisation: 512Mx8bit Access time: 14.16ns Kind of package: in-tray кількість в упаковці: 242 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4-83BCNTR | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Commercial Temp - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C512M8D4-83BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Memory: 4Gb DRAM Clock frequency: 1.2GHz Operating temperature: 0...95°C Kind of memory: DDR4; SDRAM Operating voltage: 1.2V Mounting: SMD Case: FBGA78 Type of integrated circuit: DRAM memory Memory organisation: 512Mx8bit Access time: 14.16ns Kind of package: reel кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4-83BIN | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Industrial Temp - Tray |
на замовлення 483 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C512M8D4-83BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Memory: 4Gb DRAM Clock frequency: 1.2GHz Operating temperature: -40...95°C Kind of memory: DDR4; SDRAM Operating voltage: 1.2V Mounting: SMD Case: FBGA78 Type of integrated circuit: DRAM memory Memory organisation: 512Mx8bit Access time: 14.16ns Kind of package: in-tray кількість в упаковці: 242 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4-83BINTR | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Industrial Temp - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C512M8D4-83BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Memory: 4Gb DRAM Clock frequency: 1.2GHz Operating temperature: -40...95°C Kind of memory: DDR4; SDRAM Operating voltage: 1.2V Mounting: SMD Case: FBGA78 Type of integrated circuit: DRAM memory Memory organisation: 512Mx8bit Access time: 14.16ns Kind of package: reel кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4A-75BCN | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, (A-die) Commercial Temp - Tray |
товар відсутній |
||||||||||||||||
AS4C512M8D4A-75BCNTR | Alliance Memory | DRAM 4G, DDR4, 512 x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp, T&R |
товар відсутній |
||||||||||||||||
AS4C512M8D4A-75BIN | Alliance Memory | DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, (A-die) Industrial Temp - Tray |
товар відсутній |
||||||||||||||||
AS4C512M8D4A-75BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M8D4A-75BIN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.333 GHz, FBGA, 78 Pin(s) tariffCode: 85423231 DRAM-Ausführung: DDR4 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 4Gbit usEccn: EAR99 Versorgungsspannung, nom.: 1.2V Taktfrequenz, max.: 1.333GHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 78Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 95°C Speicherkonfiguration: 512M x 8 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C512M8D4A-75BINTR | Alliance Memory | DRAM 4G, DDR4, 512 x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp, T&R |
товар відсутній |
||||||||||||||||
AS4C64M16D1-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1-6TCN | Alliance Memory | DRAM DDR1, 1G, 64M X 16, 2.5V, 66pin TSOP II, 166MHz, Commercial Temp - Tray |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C64M16D1-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1-6TIN | Alliance Memory | DRAM 1GB, 2.5V, 166Mhz 64M x 16 DDR1 |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C64M16D1-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 0.7ns Case: FBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.3...2.7V |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Mounting: SMD Case: FBGA60 Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Operating temperature: 0...70°C Case: TSOP66 Kind of package: in-tray Memory organisation: 64Mx16bit Type of integrated circuit: DRAM memory Mounting: SMD Kind of interface: parallel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Mounting: SMD Case: TSOP66 II Operating temperature: 0...95°C Kind of package: reel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Operating temperature: -40...85°C Case: TSOP66 Kind of package: in-tray Memory organisation: 64Mx16bit Type of integrated circuit: DRAM memory Mounting: SMD Kind of interface: parallel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Mounting: SMD Case: TSOP66 II Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6BIN | Alliance Memory | DRAM DDR1, 1G, 64M X 16, 2.5V, 60-BALL BGA, 166 MHZ, INDUSTRIAL TEMP - Tray |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C64M16D1A-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 0.7ns Case: FBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.3...2.7V кількість в упаковці: 240 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6BINTR | Alliance Memory | DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Mounting: SMD Case: FBGA60 Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TCN | Alliance Memory | DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16 |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C64M16D1A-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Operating temperature: 0...70°C Case: TSOP66 Kind of package: in-tray Memory organisation: 64Mx16bit Type of integrated circuit: DRAM memory Mounting: SMD Kind of interface: parallel Operating voltage: 2.5V кількість в упаковці: 108 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TCNTR | Alliance Memory | DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16 |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Mounting: SMD Case: TSOP66 II Operating temperature: 0...95°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TIN | Alliance Memory | DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16 |
на замовлення 114 шт: термін постачання 133-142 дні (днів) |
|
|||||||||||||||
AS4C64M16D1A-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Operating temperature: -40...85°C Case: TSOP66 Kind of package: in-tray Memory organisation: 64Mx16bit Type of integrated circuit: DRAM memory Mounting: SMD Kind of interface: parallel Operating voltage: 2.5V кількість в упаковці: 108 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TINTR | Alliance Memory | DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16 |
товар відсутній |
||||||||||||||||
AS4C64M16D1A-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Mounting: SMD Case: TSOP66 II Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
товар відсутній |
||||||||||||||||
AS4C64M16D2-25BAN | Alliance Memory | DRAM |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C64M16D2-25BANTR | Alliance Memory | DRAM |
товар відсутній |
||||||||||||||||
AS4C64M16D2-25BCN | Alliance Memory | DRAM 1G DDR 2 |
на замовлення 420 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C64M16D2-25BCNTR | Alliance Memory | DRAM 1G, 1.8V, 64M x 16 DDR2 |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C64M16D2-25BIN | Alliance Memory | DRAM 1G, 1.8V, 64M x 16 DDR2 |
на замовлення 418 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C64M16D2-25BINTR | Alliance Memory | DRAM 1G, 1.8V, 64M x 16 DDR2 |
товар відсутній |
||||||||||||||||
AS4C64M16D2A-25BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx16bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray Memory: 1Gb DRAM Mounting: SMD Case: FBGA84 Operating voltage: 1.8V |
товар відсутній |
||||||||||||||||
AS4C64M16D2A-25BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 400MHz Mounting: SMD Case: FBGA84 Operating temperature: -40...105°C Access time: 12.5ns Kind of package: reel Operating voltage: 1.8V |
товар відсутній |
AS4C512M8D4-83BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: -40...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: in-tray
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: -40...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: in-tray
товар відсутній
AS4C512M8D4-83BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: -40...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: reel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: -40...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: reel
товар відсутній
AS4C512M8D4-75BCN |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp - Tray
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp - Tray
на замовлення 126 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 569.72 грн |
10+ | 554.92 грн |
AS4C512M8D4-75BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
кількість в упаковці: 242 шт
товар відсутній
AS4C512M8D4-75BCNTR |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp - Tape & Reel
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp - Tape & Reel
товар відсутній
AS4C512M8D4-75BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D4-75BIN |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp - Tray
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp - Tray
на замовлення 242 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 897.7 грн |
10+ | 820.72 грн |
25+ | 697 грн |
100+ | 610.78 грн |
242+ | 580.35 грн |
484+ | 573.83 грн |
968+ | 554.99 грн |
AS4C512M8D4-75BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.2V
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.2V
кількість в упаковці: 242 шт
товар відсутній
AS4C512M8D4-75BINTR |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp - Tape & Reel
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp - Tape & Reel
товар відсутній
AS4C512M8D4-75BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.2V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.2V
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D4-83BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M8D4-83BCN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.2 GHz, FBGA, 78 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR4
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 4Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.2GHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 78Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 512M x 8 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C512M8D4-83BCN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.2 GHz, FBGA, 78 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR4
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 4Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.2GHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 78Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 512M x 8 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 237 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 833.1 грн |
10+ | 724.18 грн |
25+ | 620.96 грн |
50+ | 556.23 грн |
100+ | 493.94 грн |
AS4C512M8D4-83BCN |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Commercial Temp - Tray
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Commercial Temp - Tray
на замовлення 289 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 809.79 грн |
10+ | 739.06 грн |
25+ | 551.37 грн |
100+ | 550.65 грн |
242+ | 512.25 грн |
968+ | 500.65 грн |
2662+ | 482.54 грн |
AS4C512M8D4-83BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: in-tray
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: in-tray
кількість в упаковці: 242 шт
товар відсутній
AS4C512M8D4-83BCNTR |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Commercial Temp - Tape & Reel
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Commercial Temp - Tape & Reel
товар відсутній
AS4C512M8D4-83BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: reel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: reel
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D4-83BIN |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Industrial Temp - Tray
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Industrial Temp - Tray
на замовлення 483 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 910.38 грн |
10+ | 832.38 грн |
25+ | 629.62 грн |
100+ | 619.48 грн |
242+ | 587.6 грн |
484+ | 581.8 грн |
968+ | 562.96 грн |
AS4C512M8D4-83BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: -40...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: in-tray
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: -40...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: in-tray
кількість в упаковці: 242 шт
товар відсутній
AS4C512M8D4-83BINTR |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Industrial Temp - Tape & Reel
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1200MHZ, Industrial Temp - Tape & Reel
товар відсутній
AS4C512M8D4-83BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: -40...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: reel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: -40...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: reel
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D4A-75BCN |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, (A-die) Commercial Temp - Tray
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, (A-die) Commercial Temp - Tray
товар відсутній
AS4C512M8D4A-75BCNTR |
Виробник: Alliance Memory
DRAM 4G, DDR4, 512 x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp, T&R
DRAM 4G, DDR4, 512 x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Commercial Temp, T&R
товар відсутній
AS4C512M8D4A-75BIN |
Виробник: Alliance Memory
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, (A-die) Industrial Temp - Tray
DRAM DDR4, 4G, 512M x 8, 1.2V, 78-Ball FBGA, 1333MHZ, (A-die) Industrial Temp - Tray
товар відсутній
AS4C512M8D4A-75BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M8D4A-75BIN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.333 GHz, FBGA, 78 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR4
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 4Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.333GHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 78Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 512M x 8 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C512M8D4A-75BIN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.333 GHz, FBGA, 78 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR4
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 4Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.333GHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 78Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 512M x 8 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 959.08 грн |
10+ | 839.6 грн |
25+ | 695.74 грн |
50+ | 578.87 грн |
100+ | 493.24 грн |
AS4C512M8D4A-75BINTR |
Виробник: Alliance Memory
DRAM 4G, DDR4, 512 x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp, T&R
DRAM 4G, DDR4, 512 x 8, 1.2V, 78-Ball FBGA, 1333MHZ, Industrial Temp, T&R
товар відсутній
AS4C64M16D1-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1-6TCN |
Виробник: Alliance Memory
DRAM DDR1, 1G, 64M X 16, 2.5V, 66pin TSOP II, 166MHz, Commercial Temp - Tray
DRAM DDR1, 1G, 64M X 16, 2.5V, 66pin TSOP II, 166MHz, Commercial Temp - Tray
на замовлення 147 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1882.46 грн |
10+ | 1728.92 грн |
25+ | 1450.52 грн |
50+ | 1449.79 грн |
108+ | 1273.01 грн |
216+ | 1230.26 грн |
540+ | 1196.93 грн |
AS4C64M16D1-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C64M16D1-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M16D1-6TIN |
Виробник: Alliance Memory
DRAM 1GB, 2.5V, 166Mhz 64M x 16 DDR1
DRAM 1GB, 2.5V, 166Mhz 64M x 16 DDR1
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2143.65 грн |
10+ | 1987.21 грн |
25+ | 1667.88 грн |
50+ | 1614.98 грн |
108+ | 1421.53 грн |
216+ | 1383.86 грн |
540+ | 1341.84 грн |
AS4C64M16D1-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C64M16D1-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M16D1A-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 0.7ns
Case: FBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.3...2.7V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 0.7ns
Case: FBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.3...2.7V
товар відсутній
AS4C64M16D1A-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: FBGA60
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: FBGA60
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Case: TSOP66
Kind of package: in-tray
Memory organisation: 64Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of interface: parallel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Case: TSOP66
Kind of package: in-tray
Memory organisation: 64Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of interface: parallel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Case: TSOP66
Kind of package: in-tray
Memory organisation: 64Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of interface: parallel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Case: TSOP66
Kind of package: in-tray
Memory organisation: 64Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of interface: parallel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6BIN |
Виробник: Alliance Memory
DRAM DDR1, 1G, 64M X 16, 2.5V, 60-BALL BGA, 166 MHZ, INDUSTRIAL TEMP - Tray
DRAM DDR1, 1G, 64M X 16, 2.5V, 60-BALL BGA, 166 MHZ, INDUSTRIAL TEMP - Tray
на замовлення 150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1832.59 грн |
10+ | 1682.26 грн |
25+ | 1409.94 грн |
50+ | 1239.68 грн |
100+ | 1238.95 грн |
240+ | 1228.08 грн |
480+ | 1188.23 грн |
AS4C64M16D1A-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 0.7ns
Case: FBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.3...2.7V
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 0.7ns
Case: FBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.3...2.7V
кількість в упаковці: 240 шт
товар відсутній
AS4C64M16D1A-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: FBGA60
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: FBGA60
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M16D1A-6TCN |
Виробник: Alliance Memory
DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16
DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16
на замовлення 11 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1715.09 грн |
10+ | 1574.77 грн |
25+ | 1366.47 грн |
50+ | 1354.15 грн |
108+ | 1321.55 грн |
216+ | 1108.54 грн |
540+ | 1095.49 грн |
AS4C64M16D1A-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Case: TSOP66
Kind of package: in-tray
Memory organisation: 64Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of interface: parallel
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Operating temperature: 0...70°C
Case: TSOP66
Kind of package: in-tray
Memory organisation: 64Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of interface: parallel
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C64M16D1A-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: TSOP66 II
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M16D1A-6TIN |
Виробник: Alliance Memory
DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16
DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16
на замовлення 114 шт:
термін постачання 133-142 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2032.92 грн |
10+ | 1866.4 грн |
25+ | 1603.39 грн |
50+ | 1565.72 грн |
108+ | 1563.54 грн |
216+ | 1327.35 грн |
540+ | 1316.48 грн |
AS4C64M16D1A-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Case: TSOP66
Kind of package: in-tray
Memory organisation: 64Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of interface: parallel
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Operating temperature: -40...85°C
Case: TSOP66
Kind of package: in-tray
Memory organisation: 64Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of interface: parallel
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C64M16D1A-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Mounting: SMD
Case: TSOP66 II
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M16D2-25BAN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 156 шт:
термін постачання 21-30 дні (днів)AS4C64M16D2-25BCN |
Виробник: Alliance Memory
DRAM 1G DDR 2
DRAM 1G DDR 2
на замовлення 420 шт:
термін постачання 21-30 дні (днів)AS4C64M16D2-25BCNTR |
Виробник: Alliance Memory
DRAM 1G, 1.8V, 64M x 16 DDR2
DRAM 1G, 1.8V, 64M x 16 DDR2
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)AS4C64M16D2-25BIN |
Виробник: Alliance Memory
DRAM 1G, 1.8V, 64M x 16 DDR2
DRAM 1G, 1.8V, 64M x 16 DDR2
на замовлення 418 шт:
термін постачання 21-30 дні (днів)AS4C64M16D2A-25BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 1Gb DRAM
Mounting: SMD
Case: FBGA84
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx16bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 1Gb DRAM
Mounting: SMD
Case: FBGA84
Operating voltage: 1.8V
товар відсутній
AS4C64M16D2A-25BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 400MHz
Mounting: SMD
Case: FBGA84
Operating temperature: -40...105°C
Access time: 12.5ns
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 400MHz
Mounting: SMD
Case: FBGA84
Operating temperature: -40...105°C
Access time: 12.5ns
Kind of package: reel
Operating voltage: 1.8V
товар відсутній