Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3603) > Сторінка 25 з 61
Фото | Назва | Виробник | Інформація |
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AS4C8M16D1A-5TCN | Alliance Memory | DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C8M16D1A-5TCNTR | Alliance Memory | DRAM |
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AS4C8M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C8M16D1A-5TIN | Alliance Memory | DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C8M16D1A-5TINTR | Alliance Memory | DRAM |
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AS4C8M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C8M16MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C Case: FBGA54 Operating temperature: -40...85°C Mounting: SMD Access time: 6ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 8Mx16bit |
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AS4C8M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel Case: FBGA54 Operating temperature: -40...85°C Mounting: SMD Access time: 6ns Kind of package: reel Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 8Mx16bit |
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AS4C8M16MSA-6BIN | Alliance Memory | DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT |
на замовлення 385 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C Case: FBGA54 Operating temperature: -40...85°C Mounting: SMD Access time: 6ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 8Mx16bit |
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AS4C8M16MSA-6BINTR | Alliance Memory | DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT |
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AS4C8M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel Case: FBGA54 Operating temperature: -40...85°C Mounting: SMD Access time: 6ns Kind of package: reel Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 8Mx16bit |
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AS4C8M16S-6TCN | Alliance Memory | DRAM 128M SDRAM 8M X 16 166MHz |
на замовлення 457 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 321 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6BAN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6BAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 105°C usEccn: EAR99 |
на замовлення 307 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6BAN | Alliance Memory | DRAM |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6BANTR | Alliance Memory | DRAM |
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AS4C8M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6BIN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Industrial Temp - Tray |
на замовлення 4792 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6BIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 315 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6BINTR | Alliance Memory | DRAM |
на замовлення 3109 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TAN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6TAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 105°C usEccn: EAR99 |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6TAN | Alliance Memory | DRAM |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6TANTR | Alliance Memory | DRAM |
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AS4C8M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6TCN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial temp - Tray |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
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AS4C8M16SA-6TCNTR | Alliance Memory | DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz,Commercial Temp(.63) Tape and Reel |
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AS4C8M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-6TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-6TIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: -40°C Betriebstemperatur, max.: 85°C usEccn: EAR99 |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-6TIN | Alliance Memory | DRAM |
на замовлення 4340 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 321 шт: термін постачання 7-14 дні (днів) |
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AS4C8M16SA-6TINTR | Alliance Memory | DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz, industrial temp(.63) Tape and Reel |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C8M16SA-7BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-7BCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 336 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16SA-7BCN | Alliance Memory | DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tray |
на замовлення 531 шт: термін постачання 21-30 дні (днів) |
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AS4C8M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |
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AS4C8M16SA-7BCNTR | Alliance Memory | DRAM |
товар відсутній |
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AS4C8M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
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AS4C8M16SA-7TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C8M16SA-7TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Anzahl der Pins: 54Pin(s) euEccn: NLR Speicherdichte: 128Mbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 70°C usEccn: EAR99 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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AS4C8M16D1A-5TCN |
Виробник: Alliance Memory
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A Die
на замовлення 408 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 227.84 грн |
10+ | 198.61 грн |
108+ | 148.79 грн |
540+ | 137.5 грн |
2592+ | 134.18 грн |
5076+ | 124.88 грн |
10044+ | 120.23 грн |
AS4C8M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1A-5TIN |
Виробник: Alliance Memory
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die
DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 272.79 грн |
10+ | 238.34 грн |
108+ | 185.33 грн |
216+ | 184 грн |
540+ | 168.72 грн |
5076+ | 162.74 грн |
10044+ | 160.75 грн |
AS4C8M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C8M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 2.5V; 200MHz; TSOP66 II; -40÷85°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C8M16MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
товар відсутній
AS4C8M16MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: reel
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: reel
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
товар відсутній
AS4C8M16MSA-6BIN |
Виробник: Alliance Memory
DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
на замовлення 385 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 482.03 грн |
10+ | 433.89 грн |
25+ | 369.99 грн |
50+ | 368 грн |
100+ | 329.47 грн |
250+ | 328.14 грн |
500+ | 306.89 грн |
AS4C8M16MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
товар відсутній
AS4C8M16MSA-6BINTR |
Виробник: Alliance Memory
DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
DRAM 128M 166MHz 8Mx16 Mobile LP SDRAM IT
товар відсутній
AS4C8M16MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: reel
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8Mx16bit; 1.7V; 166MHz; 6ns; FBGA54; -40÷85°C; reel
Case: FBGA54
Operating temperature: -40...85°C
Mounting: SMD
Access time: 6ns
Kind of package: reel
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 8Mx16bit
товар відсутній
AS4C8M16S-6TCN |
Виробник: Alliance Memory
DRAM 128M SDRAM 8M X 16 166MHz
DRAM 128M SDRAM 8M X 16 166MHz
на замовлення 457 шт:
термін постачання 21-30 дні (днів)AS4C8M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 321 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 326.38 грн |
4+ | 207.58 грн |
10+ | 195.82 грн |
216+ | 193.74 грн |
AS4C8M16SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 227.27 грн |
5+ | 166.06 грн |
14+ | 157.07 грн |
324+ | 155.69 грн |
AS4C8M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6BAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 105°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C8M16SA-6BAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 105°C
usEccn: EAR99
на замовлення 307 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 394.94 грн |
10+ | 341.28 грн |
25+ | 318.93 грн |
50+ | 285.08 грн |
100+ | 256.12 грн |
250+ | 253.57 грн |
AS4C8M16SA-6BAN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 376 шт:
термін постачання 21-30 дні (днів)AS4C8M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BIN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Industrial Temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54ball BGA, 166 Mhz, Industrial Temp - Tray
на замовлення 4792 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 370.43 грн |
10+ | 289.52 грн |
250+ | 251.09 грн |
348+ | 241.79 грн |
1044+ | 229.83 грн |
2784+ | 217.88 грн |
5220+ | 198.61 грн |
AS4C8M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6BIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C8M16SA-6BIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 315 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 365.13 грн |
10+ | 315.2 грн |
25+ | 295.08 грн |
50+ | 263.63 грн |
100+ | 236.32 грн |
250+ | 234.41 грн |
AS4C8M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6BINTR |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 3109 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 401.43 грн |
10+ | 362.09 грн |
25+ | 308.22 грн |
50+ | 306.22 грн |
100+ | 275 грн |
250+ | 273.67 грн |
500+ | 256.4 грн |
AS4C8M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6TAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 105°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C8M16SA-6TAN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 105°C
usEccn: EAR99
на замовлення 111 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 320.42 грн |
10+ | 276.45 грн |
25+ | 258.57 грн |
50+ | 231.11 грн |
100+ | 207.58 грн |
AS4C8M16SA-6TAN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 242 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 358.04 грн |
10+ | 320.84 грн |
25+ | 271.68 грн |
108+ | 265.7 грн |
216+ | 242.45 грн |
540+ | 235.81 грн |
1080+ | 227.18 грн |
AS4C8M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C8M16SA-6TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 231 грн |
10+ | 199.7 грн |
25+ | 186.29 грн |
50+ | 166.76 грн |
100+ | 149.46 грн |
AS4C8M16SA-6TCN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial temp - Tray
на замовлення 195 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 234.04 грн |
10+ | 209.31 грн |
108+ | 158.76 грн |
540+ | 152.78 грн |
1080+ | 145.47 грн |
2592+ | 137.5 грн |
5076+ | 125.54 грн |
AS4C8M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TCNTR |
Виробник: Alliance Memory
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz,Commercial Temp(.63) Tape and Reel
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz,Commercial Temp(.63) Tape and Reel
товар відсутній
AS4C8M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-6TIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C8M16SA-6TIN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: -40°C
Betriebstemperatur, max.: 85°C
usEccn: EAR99
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 290.61 грн |
10+ | 251.12 грн |
25+ | 234.73 грн |
50+ | 209.66 грн |
100+ | 188.42 грн |
AS4C8M16SA-6TIN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 4340 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 342.54 грн |
10+ | 307.09 грн |
25+ | 261.05 грн |
50+ | 260.39 грн |
AS4C8M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 321 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 391.66 грн |
4+ | 258.68 грн |
10+ | 234.98 грн |
216+ | 232.49 грн |
AS4C8M16SA-6TINTR |
Виробник: Alliance Memory
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz, industrial temp(.63) Tape and Reel
DRAM SDR, 128Mb, 8M x 16, 3.3V, 54pin TSOPII, 166 Mhz, industrial temp(.63) Tape and Reel
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 303.79 грн |
10+ | 271.18 грн |
100+ | 205.92 грн |
250+ | 205.26 грн |
500+ | 197.95 грн |
1000+ | 185.33 грн |
2000+ | 184.66 грн |
AS4C8M16SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; TSOP54 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-7BCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C8M16SA-7BCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 336 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 327.87 грн |
10+ | 283.16 грн |
25+ | 265.28 грн |
50+ | 236.64 грн |
100+ | 212.69 грн |
250+ | 210.77 грн |
AS4C8M16SA-7BCN |
Виробник: Alliance Memory
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tray
DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin BGA, 143 Mhz, Commercial Temp - Tray
на замовлення 531 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 333.24 грн |
10+ | 260.49 грн |
100+ | 225.85 грн |
250+ | 225.18 грн |
348+ | 205.92 грн |
2784+ | 199.94 грн |
5220+ | 178.69 грн |
AS4C8M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2Mx16bitx4; 3.3V; 143MHz; 5.4ns; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C8M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C8M16SA-7TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C8M16SA-7TCN - DRAM, SDRAM, 128 Mbit, 8M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Anzahl der Pins: 54Pin(s)
euEccn: NLR
Speicherdichte: 128Mbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 70°C
usEccn: EAR99
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 231 грн |