Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3603) > Сторінка 20 з 61
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AS4C512M8D3LC-12BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M8D3LC-12BCN - DRAM, DDR3, 4 Gbit, 512M x 8 Bit, 800 MHz, FBGA, 78 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 1.35V Taktfrequenz, max.: 800MHz Anzahl der Pins: 78Pin(s) euEccn: NLR Speicherdichte: 4Gbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 95°C usEccn: EAR99 |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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AS4C512M8D3LC-12BCN | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp |
на замовлення 383 шт: термін постачання 21-30 дні (днів) |
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AS4C512M8D3LC-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Operating voltage: 1.35V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Case: FBGA78 Access time: 13.75ns Clock frequency: 800MHz Memory organisation: 512Mx8bit Kind of package: in-tray кількість в упаковці: 220 шт |
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AS4C512M8D3LC-12BCNTR | Alliance Memory | DRAM |
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AS4C512M8D3LC-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Operating voltage: 1.35V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Case: FBGA78 Access time: 13.75ns Clock frequency: 800MHz Memory organisation: 512Mx8bit Kind of package: reel кількість в упаковці: 2500 шт |
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AS4C512M8D3LC-12BIN | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp |
на замовлення 1811 шт: термін постачання 21-30 дні (днів) |
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AS4C512M8D3LC-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Memory capacity: 4Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M8D3LC-12BINTR | Alliance Memory | DRAM |
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AS4C512M8D3LC-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Memory capacity: 4Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M8D4-75BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Operating voltage: 1.2V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Case: FBGA78 Access time: 14.25ns Clock frequency: 1333MHz Memory organisation: 512Mx8bit Kind of package: in-tray |
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AS4C512M8D4-75BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Operating voltage: 1.2V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Case: FBGA78 Access time: 14.25ns Clock frequency: 1333MHz Memory organisation: 512Mx8bit Kind of package: reel |
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AS4C512M8D4-75BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Memory capacity: 4Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.2V |
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AS4C512M8D4-75BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; reel Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Memory capacity: 4Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.2V |
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AS4C512M8D4-83BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Case: FBGA78 Mounting: SMD Kind of package: in-tray Operating temperature: 0...95°C Clock frequency: 1.2GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit Operating voltage: 1.2V Kind of memory: DDR4; SDRAM Access time: 14.16ns Type of integrated circuit: DRAM memory |
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AS4C512M8D4-83BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Case: FBGA78 Mounting: SMD Kind of package: reel Operating temperature: 0...95°C Clock frequency: 1.2GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit Operating voltage: 1.2V Kind of memory: DDR4; SDRAM Access time: 14.16ns Type of integrated circuit: DRAM memory |
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AS4C512M8D4-83BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Case: FBGA78 Mounting: SMD Kind of package: in-tray Operating temperature: -40...95°C Clock frequency: 1.2GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit Operating voltage: 1.2V Kind of memory: DDR4; SDRAM Access time: 14.16ns Type of integrated circuit: DRAM memory |
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AS4C512M8D4-83BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Case: FBGA78 Mounting: SMD Kind of package: reel Operating temperature: -40...95°C Clock frequency: 1.2GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit Operating voltage: 1.2V Kind of memory: DDR4; SDRAM Access time: 14.16ns Type of integrated circuit: DRAM memory |
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AS4C512M8D4-75BCN | Alliance Memory | DRAM |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
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AS4C512M8D4-75BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Operating voltage: 1.2V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Case: FBGA78 Access time: 14.25ns Clock frequency: 1333MHz Memory organisation: 512Mx8bit Kind of package: in-tray кількість в упаковці: 242 шт |
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AS4C512M8D4-75BCNTR | Alliance Memory | DRAM |
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AS4C512M8D4-75BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Operating voltage: 1.2V Mounting: SMD Operating temperature: 0...95°C Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Case: FBGA78 Access time: 14.25ns Clock frequency: 1333MHz Memory organisation: 512Mx8bit Kind of package: reel кількість в упаковці: 2500 шт |
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AS4C512M8D4-75BIN | Alliance Memory | DRAM |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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AS4C512M8D4-75BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Memory capacity: 4Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.2V |
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AS4C512M8D4-75BINTR | Alliance Memory | DRAM |
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AS4C512M8D4-75BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; reel Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Memory capacity: 4Gb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.2V |
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AS4C512M8D4-83BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M8D4-83BCN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.2 GHz, FBGA, 78 Pin(s) tariffCode: 85423231 productTraceability: No rohsCompliant: YES Versorgungsspannung, nom.: 1.2V Taktfrequenz, max.: 1.2GHz Anzahl der Pins: 78Pin(s) euEccn: NLR Speicherdichte: 4Gbit hazardous: false rohsPhthalatesCompliant: YES Betriebstemperatur, min.: 0°C Betriebstemperatur, max.: 95°C usEccn: EAR99 |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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AS4C512M8D4-83BCN | Alliance Memory | DRAM |
на замовлення 467 шт: термін постачання 21-30 дні (днів) |
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AS4C512M8D4-83BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Case: FBGA78 Mounting: SMD Kind of package: in-tray Operating temperature: 0...95°C Clock frequency: 1.2GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit Operating voltage: 1.2V Kind of memory: DDR4; SDRAM Access time: 14.16ns Type of integrated circuit: DRAM memory кількість в упаковці: 242 шт |
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AS4C512M8D4-83BCNTR | Alliance Memory | DRAM |
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AS4C512M8D4-83BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Case: FBGA78 Mounting: SMD Kind of package: reel Operating temperature: 0...95°C Clock frequency: 1.2GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit Operating voltage: 1.2V Kind of memory: DDR4; SDRAM Access time: 14.16ns Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
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AS4C512M8D4-83BIN | Alliance Memory | DRAM |
на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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AS4C512M8D4-83BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Case: FBGA78 Mounting: SMD Kind of package: in-tray Operating temperature: -40...95°C Clock frequency: 1.2GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit Operating voltage: 1.2V Kind of memory: DDR4; SDRAM Access time: 14.16ns Type of integrated circuit: DRAM memory кількість в упаковці: 242 шт |
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AS4C512M8D4-83BINTR | Alliance Memory | DRAM |
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AS4C512M8D4-83BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Case: FBGA78 Mounting: SMD Kind of package: reel Operating temperature: -40...95°C Clock frequency: 1.2GHz Memory: 4Gb DRAM Memory organisation: 512Mx8bit Operating voltage: 1.2V Kind of memory: DDR4; SDRAM Access time: 14.16ns Type of integrated circuit: DRAM memory кількість в упаковці: 2500 шт |
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AS4C512M8D4A-75BCN | Alliance Memory | DRAM |
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AS4C512M8D4A-75BIN | Alliance Memory | DRAM |
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AS4C64M16D1-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M16D1-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M16D1-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M16D1-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M16D1-6TCN | Alliance Memory | DRAM DDR1, 1G, 64M X 16, 2.5V, 66pin TSOP II, 166MHz, Commercial Temp - Tray |
на замовлення 147 шт: термін постачання 21-30 дні (днів) |
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AS4C64M16D1-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C64M16D1-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
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AS4C64M16D1-6TIN | Alliance Memory | DRAM 1GB, 2.5V, 166Mhz 64M x 16 DDR1 |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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AS4C64M16D1-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C64M16D1-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 18ns Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
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AS4C64M16D1A-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 0.7ns Case: FBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.3...2.7V |
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AS4C64M16D1A-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Case: FBGA60 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M16D1A-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 200MHz Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M16D1A-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Case: TSOP66 II Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M16D1A-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 200MHz Case: TSOP66 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M16D1A-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M16D1A-6BIN | Alliance Memory | DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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AS4C64M16D1A-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Access time: 0.7ns Case: FBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.3...2.7V кількість в упаковці: 240 шт |
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AS4C64M16D1A-6BINTR | Alliance Memory | DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT |
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AS4C64M16D1A-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Case: FBGA60 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
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AS4C64M16D1A-6TCN | Alliance Memory | DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16 |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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AS4C64M16D1A-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 200MHz Case: TSOP66 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C64M16D1A-6TCNTR | Alliance Memory | DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16 |
товар відсутній |
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AS4C64M16D1A-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 1Gb DRAM Memory organisation: 64Mx16bit Clock frequency: 166MHz Case: TSOP66 II Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
товар відсутній |
AS4C512M8D3LC-12BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M8D3LC-12BCN - DRAM, DDR3, 4 Gbit, 512M x 8 Bit, 800 MHz, FBGA, 78 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Anzahl der Pins: 78Pin(s)
euEccn: NLR
Speicherdichte: 4Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C512M8D3LC-12BCN - DRAM, DDR3, 4 Gbit, 512M x 8 Bit, 800 MHz, FBGA, 78 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Anzahl der Pins: 78Pin(s)
euEccn: NLR
Speicherdichte: 4Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 242 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 820.42 грн |
10+ | 707.9 грн |
25+ | 662.45 грн |
50+ | 591.6 грн |
100+ | 530.77 грн |
AS4C512M8D3LC-12BCN |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp
на замовлення 383 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 818.37 грн |
10+ | 747.09 грн |
25+ | 635.03 грн |
50+ | 631.05 грн |
100+ | 567.28 грн |
484+ | 530.08 грн |
968+ | 526.09 грн |
AS4C512M8D3LC-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 13.75ns
Clock frequency: 800MHz
Memory organisation: 512Mx8bit
Kind of package: in-tray
кількість в упаковці: 220 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 13.75ns
Clock frequency: 800MHz
Memory organisation: 512Mx8bit
Kind of package: in-tray
кількість в упаковці: 220 шт
товар відсутній
AS4C512M8D3LC-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 13.75ns
Clock frequency: 800MHz
Memory organisation: 512Mx8bit
Kind of package: reel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.35V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 13.75ns
Clock frequency: 800MHz
Memory organisation: 512Mx8bit
Kind of package: reel
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D3LC-12BIN |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp
на замовлення 1811 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 878.04 грн |
10+ | 801.33 грн |
25+ | 677.54 грн |
100+ | 593.18 грн |
242+ | 556.65 грн |
484+ | 553.99 грн |
968+ | 546.68 грн |
AS4C512M8D3LC-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M8D3LC-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M8D4-75BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.2V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 14.25ns
Clock frequency: 1333MHz
Memory organisation: 512Mx8bit
Kind of package: in-tray
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.2V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 14.25ns
Clock frequency: 1333MHz
Memory organisation: 512Mx8bit
Kind of package: in-tray
товар відсутній
AS4C512M8D4-75BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.2V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 14.25ns
Clock frequency: 1333MHz
Memory organisation: 512Mx8bit
Kind of package: reel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.2V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 14.25ns
Clock frequency: 1333MHz
Memory organisation: 512Mx8bit
Kind of package: reel
товар відсутній
AS4C512M8D4-75BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C512M8D4-75BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C512M8D4-83BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C512M8D4-83BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: reel
Operating temperature: 0...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: reel
Operating temperature: 0...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C512M8D4-83BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C512M8D4-83BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: reel
Operating temperature: -40...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: reel
Operating temperature: -40...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C512M8D4-75BCN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 156 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 818.37 грн |
10+ | 747.09 грн |
25+ | 631.05 грн |
50+ | 616.43 грн |
100+ | 542.7 грн |
242+ | 522.77 грн |
484+ | 515.46 грн |
AS4C512M8D4-75BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.2V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 14.25ns
Clock frequency: 1333MHz
Memory organisation: 512Mx8bit
Kind of package: in-tray
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.2V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 14.25ns
Clock frequency: 1333MHz
Memory organisation: 512Mx8bit
Kind of package: in-tray
кількість в упаковці: 242 шт
товар відсутній
AS4C512M8D4-75BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.2V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 14.25ns
Clock frequency: 1333MHz
Memory organisation: 512Mx8bit
Kind of package: reel
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Operating voltage: 1.2V
Mounting: SMD
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Case: FBGA78
Access time: 14.25ns
Clock frequency: 1333MHz
Memory organisation: 512Mx8bit
Kind of package: reel
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D4-75BIN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 242 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 906.71 грн |
10+ | 828.83 грн |
25+ | 700.79 грн |
50+ | 682.86 грн |
100+ | 601.15 грн |
242+ | 577.9 грн |
484+ | 575.25 грн |
AS4C512M8D4-75BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C512M8D4-75BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Memory capacity: 4Gb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C512M8D4-83BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M8D4-83BCN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.2 GHz, FBGA, 78 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.2GHz
Anzahl der Pins: 78Pin(s)
euEccn: NLR
Speicherdichte: 4Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
Description: ALLIANCE MEMORY - AS4C512M8D4-83BCN - DRAM, DDR4, 4 Gbit, 512M x 8 Bit, 1.2 GHz, FBGA, 78 Pin(s)
tariffCode: 85423231
productTraceability: No
rohsCompliant: YES
Versorgungsspannung, nom.: 1.2V
Taktfrequenz, max.: 1.2GHz
Anzahl der Pins: 78Pin(s)
euEccn: NLR
Speicherdichte: 4Gbit
hazardous: false
rohsPhthalatesCompliant: YES
Betriebstemperatur, min.: 0°C
Betriebstemperatur, max.: 95°C
usEccn: EAR99
на замовлення 242 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 820.42 грн |
10+ | 707.9 грн |
25+ | 662.45 грн |
50+ | 591.6 грн |
100+ | 530.77 грн |
AS4C512M8D4-83BCN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 467 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 818.37 грн |
10+ | 747.09 грн |
25+ | 631.05 грн |
50+ | 616.43 грн |
100+ | 542.7 грн |
242+ | 522.77 грн |
968+ | 515.46 грн |
AS4C512M8D4-83BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 242 шт
товар відсутній
AS4C512M8D4-83BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: reel
Operating temperature: 0...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: reel
Operating temperature: 0...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D4-83BIN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 181 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 906.71 грн |
10+ | 828.83 грн |
25+ | 700.79 грн |
50+ | 682.86 грн |
100+ | 601.15 грн |
242+ | 579.23 грн |
484+ | 571.26 грн |
AS4C512M8D4-83BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 242 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 242 шт
товар відсутній
AS4C512M8D4-83BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: reel
Operating temperature: -40...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Case: FBGA78
Mounting: SMD
Kind of package: reel
Operating temperature: -40...95°C
Clock frequency: 1.2GHz
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Operating voltage: 1.2V
Kind of memory: DDR4; SDRAM
Access time: 14.16ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M16D1-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1-6TCN |
Виробник: Alliance Memory
DRAM DDR1, 1G, 64M X 16, 2.5V, 66pin TSOP II, 166MHz, Commercial Temp - Tray
DRAM DDR1, 1G, 64M X 16, 2.5V, 66pin TSOP II, 166MHz, Commercial Temp - Tray
на замовлення 147 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1725.85 грн |
10+ | 1585.09 грн |
25+ | 1329.84 грн |
50+ | 1329.18 грн |
108+ | 1167.1 грн |
216+ | 1127.91 грн |
540+ | 1097.35 грн |
AS4C64M16D1-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C64M16D1-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M16D1-6TIN |
Виробник: Alliance Memory
DRAM 1GB, 2.5V, 166Mhz 64M x 16 DDR1
DRAM 1GB, 2.5V, 166Mhz 64M x 16 DDR1
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1965.32 грн |
10+ | 1821.89 грн |
25+ | 1529.12 грн |
50+ | 1480.63 грн |
108+ | 1303.27 грн |
216+ | 1268.73 грн |
540+ | 1230.21 грн |
AS4C64M16D1-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C64M16D1-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 18ns
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M16D1A-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 0.7ns
Case: FBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.3...2.7V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 0.7ns
Case: FBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.3...2.7V
товар відсутній
AS4C64M16D1A-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: FBGA60
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: FBGA60
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 200MHz
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 200MHz
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 200MHz
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 200MHz
Case: TSOP66
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M16D1A-6BIN |
Виробник: Alliance Memory
DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT
DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT
на замовлення 150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1850.62 грн |
10+ | 1698.91 грн |
25+ | 1461.37 грн |
50+ | 1424.83 грн |
100+ | 1251.46 грн |
240+ | 1185.04 грн |
480+ | 1175.74 грн |
AS4C64M16D1A-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 0.7ns
Case: FBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.3...2.7V
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Access time: 0.7ns
Case: FBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 2.3...2.7V
кількість в упаковці: 240 шт
товар відсутній
AS4C64M16D1A-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: FBGA60
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; FBGA60; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: FBGA60
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M16D1A-6TCN |
Виробник: Alliance Memory
DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16
DRAM DDR1, 1GB, 2.5V 166MHz,64M x 16
на замовлення 11 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1572.41 грн |
10+ | 1443.76 грн |
25+ | 1252.79 грн |
50+ | 1241.5 грн |
108+ | 1211.61 грн |
216+ | 1016.31 грн |
540+ | 1004.36 грн |
AS4C64M16D1A-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 200MHz
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 200MHz; TSOP66; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 200MHz
Case: TSOP66
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C64M16D1A-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 1Gb DRAM
Memory organisation: 64Mx16bit
Clock frequency: 166MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
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