Продукція > ANALOG POWER INC. > Всі товари виробника ANALOG POWER INC. (363) > Сторінка 1 з 7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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2N7002-CT | Analog Power Inc. |
Description: MOSFET N-CH 60V 0.6A SOT-23Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2N7002E | Analog Power Inc. |
Description: MOSFET N-CH 60V 1.4A SOT-23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ADC3D02060E | Analog Power Inc. |
Description: DIODE SIL CARB 600V 8A TO252-2L |
на замовлення 580 шт: термін постачання 21-31 дні (днів) |
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ADC3D10065I | Analog Power Inc. |
Description: DIODE SIL SIC 1200V 10A TO220Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 6.3pF @ 200V, 100kHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 2 µA @ 650 V |
на замовлення 550 шт: термін постачання 21-31 дні (днів) |
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ADC4D10120A | Analog Power Inc. |
Description: DIODE SIL SIC 1200V 33A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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ADC4D10120D | Analog Power Inc. |
Description: DIODE SIL CARB 1200V 9A TO2473Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
на замовлення 550 шт: термін постачання 21-31 дні (днів) |
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ADC4D10120E | Analog Power Inc. |
Description: DIODE SIL CARB 1200V 33A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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ADC4D10120H | Analog Power Inc. |
Description: DIODE SIC 1.2KV 31.5A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz Current - Average Rectified (Io): 31.5A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
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ADC4D20120H | Analog Power Inc. |
Description: DIODE SIL CARB 1200V 54A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 12pF @ 0V, 100kHz Current - Average Rectified (Io): 54A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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ADC6D10065A | Analog Power Inc. |
Description: DIODE SIL SIC 650V 37A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz Current - Average Rectified (Io): 37A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ADC6D10065E | Analog Power Inc. |
Description: DIODE SIL SIC 650V 35A TO252-2Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz Current - Average Rectified (Io): 35A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ADC6D10065G | Analog Power Inc. |
Description: DIODE SIL SIC 650V 36A TO263-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz Current - Average Rectified (Io): 36A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 650 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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ADE4D20120D | Analog Power Inc. |
Description: DIODE SIL CARB 1200V 33A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 12pF @ 0V, 100kHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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ADE4D20120G | Analog Power Inc. |
Description: DIODE SIL CARB 1200V 56A TO263-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 12pF @ 0V, 100kHz Current - Average Rectified (Io): 56A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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AM10N20-400D | Analog Power Inc. |
Description: MOSFET N-CH 200V 10A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AM10N40-1800D | Analog Power Inc. |
Description: MOSFET N-CH 400V 4A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: TO-252 (DPAK) |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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AM10N50-380D | Analog Power Inc. |
Description: MOSFET N-CH 500V 10A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 50 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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AM110P06-06B | Analog Power Inc. |
Description: MOSFET P-CH -60V 90A TO-263 |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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AM12N65P | Analog Power Inc. |
Description: MOSFET N-CH 650V 12A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 23A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 2691 pF @ 15 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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AM12N70P | Analog Power Inc. |
Description: MOSFET N-CH 700V 12A TO-220Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 6 V Drain to Source Voltage (Vdss): 700 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 2748 pF @ 15 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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AM140N03-03D | Analog Power Inc. |
Description: MOSFET N-CH 30V 100A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1929 pF @ 15 V |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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AM14N25-280D | Analog Power Inc. |
Description: MOSFET N-CH 250V 10.8A TO-252Packaging: Bulk |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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AM14N65P | Analog Power Inc. |
Description: MOSFET N-CH 650V 14A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 18A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3469 pF @ 15 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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AM160N08-08B | Analog Power Inc. |
Description: MOSFET N-CH 80V 150A TO-263 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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AM202N04-04P | Analog Power Inc. |
Description: MOSFET N-CH 40V 202A TO-220Input Capacitance (Ciss) (Max) @ Vds: 9569 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 5.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 202A, 10V Current - Continuous Drain (Id) @ 25°C: 202A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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AM20N06-90D | Analog Power Inc. |
Description: MOSFET N-CH 60V 19A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 15.2A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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AM20N10-115D | Analog Power Inc. |
Description: MOSFET N-CH 100V 17A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 17A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1622 pF @ 15 V |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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AM20N10-130D | Analog Power Inc. |
Description: MOSFET N-CH 100V 17A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 10V Power Dissipation (Max): 50W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AM20N10-160D | Analog Power Inc. |
Description: MOSFET N-CH 100V 15A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 3.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 15 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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AM20N10-250D | Analog Power Inc. |
Description: MOSFET N-CH 100V 11.6A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 11A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 15 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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AM20N10-52PF | Analog Power Inc. |
Description: MOSFET N-CH 100V 20A TO-220CFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220CFM Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 1184 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AM20N15-90D | Analog Power Inc. |
Description: MOSFET N-CH 150V 20A TO-252Supplier Device Package: TO-252 (DPAK) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 5800 шт: термін постачання 21-31 дні (днів) |
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AM20P06-135D | Analog Power Inc. |
Description: MOSFET P-CH -60V 15.8A TO-252 |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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AM2300N | Analog Power Inc. |
Description: MOSFET N-CH 30V 8.9A SOT-23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2301P | Analog Power Inc. |
Description: MOSFET P-CH -20V 2.6A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.3A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 400mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2303P | Analog Power Inc. |
Description: MOSFET P-CH 20V 3A SOT-23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2304N | Analog Power Inc. |
Description: MOSFET N-CH 30V 8.5A SOT-23Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2305P | Analog Power Inc. |
Description: MOSFET P-CH 20V 4.5A SOT-23 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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AM2305PE | Analog Power Inc. |
Description: MOSFET P-CH 20V 4.5A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.7A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 400mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AM2306N | Analog Power Inc. |
Description: MOSFET N-CH 30V 3.9A SOT-23Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2306NE | Analog Power Inc. |
Description: MOSFET N-CH 30V 3.9A SOT-23Packaging: Bulk |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AM2308NE | Analog Power Inc. |
Description: MOSFET N-CH 30V 3.5A SOT-23 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AM2314N | Analog Power Inc. |
Description: MOSFET N-CH 20V 6.3A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 4.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2315P | Analog Power Inc. |
Description: MOSFET P-CH 30V 3.2A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Supplier Device Package: SOT-23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2328NE | Analog Power Inc. |
Description: MOSFET N-CH 20V 6.3A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 400mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 4.5 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AM2329P | Analog Power Inc. |
Description: MOSFET P-CH -30V 2.8A SOT-23Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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AM2336N | Analog Power Inc. |
Description: MOSFET N-CH 30V 5.3A SOT-23Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Power Dissipation (Max): 1.3W (Ta) Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-59, SOT-23 Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AM2336N-CT | Analog Power Inc. |
Description: MOSFET N-CH 30V 5.3A SOT-23Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23 Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2340NE | Analog Power Inc. |
Description: MOSFET N-CH 40V 5A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.2A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V |
на замовлення 14900 шт: термін постачання 21-31 дні (днів) |
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AM2343P | Analog Power Inc. |
Description: MOSFET P-CH -30V 3.9A SOT-23Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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AM2358NE | Analog Power Inc. |
Description: MOSFET N-CH 60V 3.1A SOT-23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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AM2362N | Analog Power Inc. |
Description: MOSFET N-CH 60V 5.7A SOT-23Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
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AM2370N | Analog Power Inc. |
Description: MOSFET N-CH 100V 1.5A DFN5X6Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 1.8A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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AM2374N | Analog Power Inc. |
Description: MOSFET N-CH 100V 3.1A SOT-23Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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AM2376DN | Analog Power Inc. |
Description: MOSFET N-CH D-MODE 250V 0.35A SO |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AM2381P | Analog Power Inc. |
Description: MOSFET P-CH 80V 1.1A SOT-23Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AM23A0N | Analog Power Inc. |
Description: MOSFET N-CH 600V 0.136A SOT-23 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AM2N60B | Analog Power Inc. |
Description: MOSFET N-CH 600V 2.2A TO-263Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| AM2SK2313 | Analog Power Inc. | Description: MOSFET P-CH 60V 70A TO-247 |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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AM30N06-39D | Analog Power Inc. |
Description: MOSFET N-CH 60V 30A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 30A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 15 V |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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| 2N7002-CT |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 0.6A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: MOSFET N-CH 60V 0.6A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.71 грн |
| 10+ | 45.71 грн |
| 100+ | 27.47 грн |
| 500+ | 23.86 грн |
| 1000+ | 16.22 грн |
| 3000+ | 14.94 грн |
| 2N7002E |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 1.4A SOT-23
Description: MOSFET N-CH 60V 1.4A SOT-23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.29 грн |
| 10+ | 46.09 грн |
| 100+ | 28.75 грн |
| 500+ | 18.65 грн |
| 1000+ | 14.17 грн |
| 3000+ | 12.93 грн |
| ADC3D02060E |
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Виробник: Analog Power Inc.
Description: DIODE SIL CARB 600V 8A TO252-2L
Description: DIODE SIL CARB 600V 8A TO252-2L
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.69 грн |
| 10+ | 81.90 грн |
| 100+ | 73.71 грн |
| 500+ | 53.80 грн |
| ADC3D10065I |
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Виробник: Analog Power Inc.
Description: DIODE SIL SIC 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 200V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
Description: DIODE SIL SIC 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 200V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 493.69 грн |
| 50+ | 379.30 грн |
| 100+ | 339.37 грн |
| 500+ | 281.02 грн |
| ADC4D10120A |
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Виробник: Analog Power Inc.
Description: DIODE SIL SIC 1200V 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE SIL SIC 1200V 33A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| ADC4D10120D |
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Виробник: Analog Power Inc.
Description: DIODE SIL CARB 1200V 9A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE SIL CARB 1200V 9A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 856.83 грн |
| 10+ | 726.66 грн |
| 100+ | 628.45 грн |
| 500+ | 534.48 грн |
| ADC4D10120E |
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Виробник: Analog Power Inc.
Description: DIODE SIL CARB 1200V 33A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE SIL CARB 1200V 33A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 839.42 грн |
| 10+ | 712.03 грн |
| 100+ | 615.79 грн |
| ADC4D10120H |
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Виробник: Analog Power Inc.
Description: DIODE SIC 1.2KV 31.5A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE SIC 1.2KV 31.5A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 31.5A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 876.61 грн |
| 10+ | 743.35 грн |
| 100+ | 642.87 грн |
| 500+ | 546.75 грн |
| ADC4D20120H |
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Виробник: Analog Power Inc.
Description: DIODE SIL CARB 1200V 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE SIL CARB 1200V 54A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 54A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3317.35 грн |
| 10+ | 2838.16 грн |
| 100+ | 2482.39 грн |
| ADC6D10065A |
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Виробник: Analog Power Inc.
Description: DIODE SIL SIC 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
Description: DIODE SIL SIC 650V 37A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| ADC6D10065E |
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Виробник: Analog Power Inc.
Description: DIODE SIL SIC 650V 35A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
Description: DIODE SIL SIC 650V 35A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| ADC6D10065G |
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Виробник: Analog Power Inc.
Description: DIODE SIL SIC 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
Description: DIODE SIL SIC 650V 36A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| ADE4D20120D |
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Виробник: Analog Power Inc.
Description: DIODE SIL CARB 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE SIL CARB 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3635.39 грн |
| 10+ | 3110.83 грн |
| 100+ | 2720.76 грн |
| ADE4D20120G |
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Виробник: Analog Power Inc.
Description: DIODE SIL CARB 1200V 56A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE SIL CARB 1200V 56A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3170.19 грн |
| 10+ | 2713.59 грн |
| 100+ | 2373.47 грн |
| AM10N20-400D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 200V 10A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V
Description: MOSFET N-CH 200V 10A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.22 грн |
| 10+ | 67.88 грн |
| 100+ | 61.04 грн |
| 500+ | 44.55 грн |
| 1000+ | 36.60 грн |
| 2500+ | 31.82 грн |
| AM10N40-1800D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 400V 4A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-252 (DPAK)
Description: MOSFET N-CH 400V 4A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-252 (DPAK)
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.58 грн |
| 10+ | 47.31 грн |
| 100+ | 42.57 грн |
| AM10N50-380D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 500V 10A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 50 V
Description: MOSFET N-CH 500V 10A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 50 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.91 грн |
| 10+ | 51.43 грн |
| 100+ | 46.28 грн |
| 500+ | 33.78 грн |
| 1000+ | 27.75 грн |
| AM110P06-06B |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH -60V 90A TO-263
Description: MOSFET P-CH -60V 90A TO-263
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1056.20 грн |
| 10+ | 678.21 грн |
| 100+ | 610.38 грн |
| AM12N65P |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 650V 12A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 23A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2691 pF @ 15 V
Description: MOSFET N-CH 650V 12A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 23A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2691 pF @ 15 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| AM12N70P |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 700V 12A TO-220
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2748 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Description: MOSFET N-CH 700V 12A TO-220
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2748 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| AM140N03-03D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 30V 100A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1929 pF @ 15 V
Description: MOSFET N-CH 30V 100A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1929 pF @ 15 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.26 грн |
| 10+ | 76.80 грн |
| 100+ | 69.15 грн |
| AM14N25-280D |
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на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.21 грн |
| 10+ | 79.54 грн |
| 100+ | 71.55 грн |
| AM14N65P |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 650V 14A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3469 pF @ 15 V
Description: MOSFET N-CH 650V 14A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3469 pF @ 15 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| AM160N08-08B |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 80V 150A TO-263
Description: MOSFET N-CH 80V 150A TO-263
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 396.37 грн |
| 10+ | 254.39 грн |
| 100+ | 228.95 грн |
| AM202N04-04P |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 40V 202A TO-220
Input Capacitance (Ciss) (Max) @ Vds: 9569 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 5.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 202A, 10V
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: MOSFET N-CH 40V 202A TO-220
Input Capacitance (Ciss) (Max) @ Vds: 9569 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 5.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 202A, 10V
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.57 грн |
| 50+ | 111.34 грн |
| 100+ | 89.69 грн |
| 500+ | 72.56 грн |
| 1000+ | 58.05 грн |
| AM20N06-90D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 19A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 15.2A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
Description: MOSFET N-CH 60V 19A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 15.2A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.18 грн |
| 13+ | 24.15 грн |
| 100+ | 21.71 грн |
| 500+ | 15.84 грн |
| 1000+ | 13.01 грн |
| 3000+ | 11.32 грн |
| AM20N10-115D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 17A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1622 pF @ 15 V
Description: MOSFET N-CH 100V 17A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 17A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1622 pF @ 15 V
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.47 грн |
| 10+ | 30.55 грн |
| 100+ | 27.50 грн |
| 500+ | 20.07 грн |
| 1000+ | 16.48 грн |
| 2500+ | 14.33 грн |
| AM20N10-130D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 17A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V
Description: MOSFET N-CH 100V 17A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.48 грн |
| 10+ | 64.30 грн |
| 100+ | 57.88 грн |
| 500+ | 42.25 грн |
| 1000+ | 34.70 грн |
| AM20N10-160D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 15A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 15 V
Description: MOSFET N-CH 100V 15A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 15 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.47 грн |
| 10+ | 30.55 грн |
| 100+ | 27.50 грн |
| 500+ | 20.07 грн |
| 1000+ | 16.48 грн |
| AM20N10-250D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 11.6A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 11A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 15 V
Description: MOSFET N-CH 100V 11.6A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 11A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 15 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.84 грн |
| 10+ | 32.15 грн |
| 100+ | 28.94 грн |
| 500+ | 21.12 грн |
| 1000+ | 17.35 грн |
| 2500+ | 15.09 грн |
| AM20N10-52PF |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 20A TO-220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1184 pF @ 50 V
Description: MOSFET N-CH 100V 20A TO-220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1184 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.92 грн |
| 50+ | 102.67 грн |
| 100+ | 81.36 грн |
| 500+ | 64.72 грн |
| 1000+ | 52.72 грн |
| 2000+ | 49.63 грн |
| AM20N15-90D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 150V 20A TO-252
Supplier Device Package: TO-252 (DPAK)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 150V 20A TO-252
Supplier Device Package: TO-252 (DPAK)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.75 грн |
| 10+ | 36.87 грн |
| 100+ | 33.16 грн |
| 500+ | 24.21 грн |
| 1000+ | 19.88 грн |
| 2500+ | 17.29 грн |
| AM20P06-135D |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH -60V 15.8A TO-252
Description: MOSFET P-CH -60V 15.8A TO-252
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.51 грн |
| 10+ | 74.21 грн |
| AM2300N |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 30V 8.9A SOT-23
Description: MOSFET N-CH 30V 8.9A SOT-23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.59 грн |
| 10+ | 35.20 грн |
| 100+ | 31.66 грн |
| 500+ | 23.11 грн |
| 1000+ | 18.99 грн |
| 3000+ | 16.51 грн |
| AM2301P |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH -20V 2.6A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 15 V
Description: MOSFET P-CH -20V 2.6A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.02 грн |
| 15+ | 21.64 грн |
| 100+ | 19.49 грн |
| 500+ | 14.22 грн |
| 1000+ | 11.68 грн |
| 3000+ | 10.16 грн |
| AM2303P |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH 20V 3A SOT-23
Description: MOSFET P-CH 20V 3A SOT-23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.32 грн |
| 19+ | 16.23 грн |
| 100+ | 14.61 грн |
| 500+ | 10.67 грн |
| 1000+ | 8.76 грн |
| 3000+ | 7.62 грн |
| AM2304N |
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на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.59 грн |
| 10+ | 35.20 грн |
| 100+ | 31.66 грн |
| 500+ | 23.11 грн |
| 1000+ | 18.99 грн |
| 3000+ | 16.51 грн |
| AM2305P |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH 20V 4.5A SOT-23
Description: MOSFET P-CH 20V 4.5A SOT-23
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.60 грн |
| 14+ | 22.70 грн |
| 100+ | 20.46 грн |
| 500+ | 14.93 грн |
| 1000+ | 12.27 грн |
| AM2305PE |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH 20V 4.5A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
Description: MOSFET P-CH 20V 4.5A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.99 грн |
| 25+ | 12.19 грн |
| 100+ | 10.96 грн |
| 500+ | 8.00 грн |
| 1000+ | 6.57 грн |
| AM2306N |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 30V 3.9A SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: MOSFET N-CH 30V 3.9A SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.41 грн |
| 28+ | 11.12 грн |
| 100+ | 9.99 грн |
| 500+ | 7.29 грн |
| 1000+ | 5.99 грн |
| 3000+ | 5.21 грн |
| AM2306NE |
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на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.98 грн |
| 13+ | 24.38 грн |
| 100+ | 21.93 грн |
| 500+ | 16.00 грн |
| 1000+ | 13.14 грн |
| AM2308NE |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 30V 3.5A SOT-23
Description: MOSFET N-CH 30V 3.5A SOT-23
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.73 грн |
| 21+ | 15.16 грн |
| 100+ | 13.64 грн |
| 500+ | 9.96 грн |
| 1000+ | 8.18 грн |
| AM2314N |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 20V 6.3A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 4.5 V
Description: MOSFET N-CH 20V 6.3A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 4.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.15 грн |
| 22+ | 14.17 грн |
| 100+ | 12.75 грн |
| 500+ | 9.31 грн |
| 1000+ | 7.64 грн |
| 3000+ | 6.65 грн |
| AM2315P |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH 30V 3.2A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: SOT-23
Description: MOSFET P-CH 30V 3.2A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Supplier Device Package: SOT-23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.99 грн |
| 26+ | 12.11 грн |
| 100+ | 10.91 грн |
| 500+ | 7.96 грн |
| 1000+ | 6.54 грн |
| 3000+ | 5.68 грн |
| AM2328NE |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 20V 6.3A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 4.5 V
Description: MOSFET N-CH 20V 6.3A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 4.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.15 грн |
| 22+ | 14.17 грн |
| 100+ | 12.75 грн |
| 500+ | 9.31 грн |
| 1000+ | 7.64 грн |
| 3000+ | 6.65 грн |
| AM2329P |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH -30V 2.8A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: MOSFET P-CH -30V 2.8A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.66 грн |
| 38+ | 8.08 грн |
| 100+ | 7.24 грн |
| 500+ | 5.28 грн |
| 1000+ | 4.34 грн |
| 3000+ | 3.77 грн |
| AM2336N |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 30V 5.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-59, SOT-23
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V
Description: MOSFET N-CH 30V 5.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-59, SOT-23
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.60 грн |
| 6000+ | 6.04 грн |
| AM2336N-CT |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 30V 5.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23
Packaging: Bulk
Description: MOSFET N-CH 30V 5.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.3A, 2.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23
Packaging: Bulk
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.78 грн |
| 24+ | 12.72 грн |
| 100+ | 11.45 грн |
| 500+ | 8.36 грн |
| 1000+ | 6.86 грн |
| 3000+ | 5.97 грн |
| AM2340NE |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 40V 5A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Description: MOSFET N-CH 40V 5A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
на замовлення 14900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.20 грн |
| 27+ | 11.66 грн |
| 100+ | 10.52 грн |
| 500+ | 7.68 грн |
| 1000+ | 6.31 грн |
| 3000+ | 5.48 грн |
| AM2343P |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH -30V 3.9A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: MOSFET P-CH -30V 3.9A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.82 грн |
| 30+ | 10.21 грн |
| 100+ | 9.21 грн |
| 500+ | 6.72 грн |
| 1000+ | 5.52 грн |
| AM2358NE |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 3.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
Description: MOSFET N-CH 60V 3.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.41 грн |
| 28+ | 10.97 грн |
| 100+ | 9.85 грн |
| 500+ | 7.19 грн |
| 1000+ | 5.91 грн |
| 3000+ | 5.14 грн |
| AM2362N |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 5.7A SOT-23
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET N-CH 60V 5.7A SOT-23
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.90 грн |
| 18+ | 17.14 грн |
| 100+ | 15.40 грн |
| 500+ | 11.24 грн |
| 1000+ | 9.23 грн |
| 3000+ | 8.03 грн |
| AM2370N |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 1.5A DFN5X6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 100V 1.5A DFN5X6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.15 грн |
| 22+ | 14.02 грн |
| 100+ | 12.65 грн |
| 500+ | 9.23 грн |
| 1000+ | 7.58 грн |
| 3000+ | 6.59 грн |
| AM2374N |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 3.1A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: MOSFET N-CH 100V 3.1A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.18 грн |
| 13+ | 24.15 грн |
| 100+ | 21.71 грн |
| 500+ | 15.84 грн |
| AM2376DN |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH D-MODE 250V 0.35A SO
Description: MOSFET N-CH D-MODE 250V 0.35A SO
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.45 грн |
| 10+ | 50.89 грн |
| 100+ | 32.52 грн |
| 500+ | 23.09 грн |
| 1000+ | 20.69 грн |
| 3000+ | 17.11 грн |
| AM2381P |
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Виробник: Analog Power Inc.
Description: MOSFET P-CH 80V 1.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Description: MOSFET P-CH 80V 1.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.35 грн |
| 12+ | 25.75 грн |
| 100+ | 23.15 грн |
| 500+ | 16.90 грн |
| 1000+ | 13.88 грн |
| AM23A0N |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 600V 0.136A SOT-23
Description: MOSFET N-CH 600V 0.136A SOT-23
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 21.33 грн |
| 100+ | 13.25 грн |
| 500+ | 9.13 грн |
| 1000+ | 8.07 грн |
| 3000+ | 6.71 грн |
| AM2N60B |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 600V 2.2A TO-263
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET N-CH 600V 2.2A TO-263
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 528.50 грн |
| AM2SK2313 |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 60V 70A TO-247
Description: MOSFET P-CH 60V 70A TO-247
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 527.71 грн |
| 10+ | 338.95 грн |
| 100+ | 305.05 грн |
| 500+ | 222.66 грн |
| AM30N06-39D |
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Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 30A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 15 V
Description: MOSFET N-CH 60V 30A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 30A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 15 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 59.58 грн |
| 100+ | 53.59 грн |
| 500+ | 39.11 грн |
| 1000+ | 32.13 грн |





























































