Продукція > ANALOG POWER INC. > Всі товари виробника ANALOG POWER INC. (316) > Сторінка 5 з 6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AM7982N | Analog Power Inc. |
Description: MOSFET 2N-CH 80V 62.2A DFN5X6Packaging: Bulk Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM8N20-600D | Analog Power Inc. |
Description: MOSFET N-CH 200V 7.5A TO-252Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N03-03P | Analog Power Inc. |
Description: MOSFET P-CH 30V 90A TO-220Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 45A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 15 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
AM90N04-02B | Analog Power Inc. |
Description: MOSFET N-CH 40V 120A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 45A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 15 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N04-02P | Analog Power Inc. |
Description: MOSFET N-CH 40V 232A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 232A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 45A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V |
на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N06-03P | Analog Power Inc. |
Description: MOSFET N-CH 60V 90A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: TO-220 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N06-04D | Analog Power Inc. |
Description: MOSFET N-CH 60V 83A TO-252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 45A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11698 pF @ 15 V |
на замовлення 4830 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N06-04m2B | Analog Power Inc. |
Description: MOSFET N-CH 60V 90A TO-263Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N06-10P | Analog Power Inc. |
Description: MOSFET N-CH 60V 90A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 30A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5887 pF @ 15 V |
на замовлення 700 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N06-10PCFM | Analog Power Inc. |
Description: MOSFET N-CH 60V 64A TO-220CFMPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 45A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220CFM Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 10331 pF @ 15 V |
на замовлення 6485 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N06-16P | Analog Power Inc. |
Description: MOSFET N-CH 40V 90A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 45A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2138 pF @ 15 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N08-04B | Analog Power Inc. |
Description: MOSFET N-CH 80V 90A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 11678 pF @ 15 V |
на замовлення 2385 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N08-10B | Analog Power Inc. |
Description: MOSFET N-CH 80V 90A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 44A, 4.5V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5052 pF @ 15 V |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N08-10B-CT | Analog Power Inc. |
Description: MOSFET N-CH 80V 90A TO-263Packaging: Bulk Package / Case: TO-263 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 44A, 4.5V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5052 pF @ 15 V |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N10-07B | Analog Power Inc. |
Description: MOSFET N-CH 100V 90A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 45A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 9235 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N10-07P | Analog Power Inc. |
Description: MOSFET N-CH 100V 130A TO-220Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N10-14P | Analog Power Inc. |
Description: MOSFET N-CH 100V 90A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 300W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 4221 pF @ 15 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
AM90N15-20P | Analog Power Inc. |
Description: MOSFET N-CH 150V 90A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 100A, 10V Power Dissipation (Max): 300W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 9857 pF @ 15 V |
на замовлення 2300 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N20-140B | Analog Power Inc. |
Description: MOSFET N-CH 200V 29A TO-263Packaging: Strip Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 35A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5.5 V Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 15 V |
на замовлення 698 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N20-40P | Analog Power Inc. |
Description: MOSFET N-CH 200V 130A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: TO-220 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM90N20-78B | Analog Power Inc. |
Description: MOSFET N-CH 200V 90A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 4467 pF @ 15 V Rds On (Max) @ Id, Vgs: 78mOhm @ 57A, 10V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM9435P | Analog Power Inc. |
Description: MOSFET P-CH 30V 7.1A SO-8Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AM9926N | Analog Power Inc. |
Description: MOSFET N-CH 20V 6.9A SO-8Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 439pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
AM9945N | Analog Power Inc. |
Description: MOSFET N-CH 60V 3.6A SO-8Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 89mOhm @ 2.9A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 297 pF @ 15 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMB420N | Analog Power Inc. |
Description: MOSFET N-CH 20V 6.9A DFN1.6X1.6Packaging: Bulk Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 2.11W (Ta) Supplier Device Package: 6-DFN (1.6x1.6) |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMB421P | Analog Power Inc. |
Description: MOSFET P-CH 20V 5A DFN1.6X1.6Packaging: Bulk Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Power Dissipation (Max): 2.1W (Ta) Supplier Device Package: 6-DFN (1.6x1.6) |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMB423P | Analog Power Inc. |
Description: MOSFET P-CH 25V 10.7A DFN1.6X1.6Packaging: Bulk Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Power Dissipation (Max): 2W (Ta) Supplier Device Package: 6-DFN (1.6x1.6) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMC2M0025120D | Analog Power Inc. |
Description: SICFET N-CH 1200V 20A TO-247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 20V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 50 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMC2M0080120D | Analog Power Inc. |
Description: SICFET N-CH 1200V 36A TO247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 155°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1.2 kV Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 50 V Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 6.5 V |
на замовлення 1199 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMC3M0040120D | Analog Power Inc. |
Description: SICFET N-CH 1200V 15A TO-247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 20V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): ±25V |
на замовлення 740 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMG402N | Analog Power Inc. |
Description: MOSFET N-CH 250V 3.5A SOT-89Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMG461P | Analog Power Inc. |
Description: MOSFET P-CH 60V 14A SOT-89Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMIB075N15N3 | Analog Power Inc. |
Description: MOSFET N-CH 150V 90A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMIB108N15N3 | Analog Power Inc. |
Description: MOSFET N-CH 150V 100A TO-263Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 2236 pF @ 50 V |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMIP030N10N3 | Analog Power Inc. |
Description: MOSFET N-CH 100V 100A TO-262Packaging: Bulk Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 1V @ 1mA (Min) Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMIRF9640S | Analog Power Inc. |
Description: MOSFET P-CH 200V 5A TO-263Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMIRLML6401 | Analog Power Inc. |
Description: MOSFET P-CH 20V 4.3A SOT-23Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel |
на замовлення 45500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMIXFP60N25X3 | Analog Power Inc. |
Description: MOSFET N-CH 200V 90A TO220CFMPackaging: Bulk |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMK431P | Analog Power Inc. |
Description: MOSFET P-CH 30V 0.68A SOT-723Packaging: Bulk FET Type: P-Channel |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMPMZ350UPEP | Analog Power Inc. |
Description: MOSFET N-CH 20V 0.9A SOT-883Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 310mOhm @ 200mA, 4.5V Power Dissipation (Max): 400mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 16 V |
на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR416N | Analog Power Inc. |
Description: MOSFET N-CH 100V 75A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7442 pF @ 15 V |
на замовлення 3300 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR424N | Analog Power Inc. |
Description: MOSFET N-CH 100V 100A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2979 pF @ 15 V |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR426N | Analog Power Inc. |
Description: MOSFET N-CH 50V 180A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 6.9W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7723 pF @ 15 V |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR428N | Analog Power Inc. |
Description: MOSFET N-CH 60V 100A DFN5X6Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR438N | Analog Power Inc. |
Description: MOSFET N-CH 30V 112A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 112A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5770 pF @ 15 V |
на замовлення 2200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR440N | Analog Power Inc. |
Description: MOSFET N-CH 40V 100A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V |
на замовлення 1750 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR441P | Analog Power Inc. |
Description: MOSFET P-CH 40V 125A DFN5X6Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR446N | Analog Power Inc. |
Description: MOSFET N-CH 100V 80A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V Power Dissipation (Max): 5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 2941 pF @ 15 V |
на замовлення 3580 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR448N | Analog Power Inc. |
Description: MOSFET N-CH 100V 80A DFN5x6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5.2x5.55) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR448N-CT | Analog Power Inc. |
Description: MOSFET N-CH 100V 80A DFN5x6Packaging: Bulk Package / Case: DFN5x6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN5x6 Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR452N | Analog Power Inc. |
Description: MOSFET N-CH 100V 20A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5.2x5.55) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR452N-CT | Analog Power Inc. |
Description: MOSFET N-CH 100V 20A DFN5X6Packaging: Bulk Package / Case: DFN5x6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN5x6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V |
на замовлення 5993 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR461P | Analog Power Inc. |
Description: MOSFET P-CH 60V 100A DFN5X6Packaging: Bulk Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR462N | Analog Power Inc. |
Description: MOSFET N-CH 60V 80A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7283 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR464N | Analog Power Inc. |
Description: MOSFET N-CH 60V 87A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 13A, 10V Power Dissipation (Max): 5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V |
на замовлення 650 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR466N | Analog Power Inc. |
Description: MOSFET N-CH 60V 28A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 484 pF @ 20 V Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V Power Dissipation (Max): 5W (Ta), 22W (Tc) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR472N | Analog Power Inc. |
Description: MOSFET N-CH 100V 59A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5.2x5.55) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 50 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 59A (Tc) Power Dissipation (Max): 5W (Ta), 63W (Tc) |
на замовлення 4519 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR474N | Analog Power Inc. |
Description: MOSFET N-CH 40V 40A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 23W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 20 V |
на замовлення 1750 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMR482N | Analog Power Inc. |
Description: MOSFET N-CH 80V 77A DFN5X6Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 77A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1551 pF @ 40 V |
на замовлення 5390 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AMRA02N | Analog Power Inc. |
Description: MOSFET N-CH 300V 7.4A DFN5X6Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.4A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta), 65.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
| AM7982N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET 2N-CH 80V 62.2A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Description: MOSFET 2N-CH 80V 62.2A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.40 грн |
| 10+ | 51.03 грн |
| 100+ | 45.90 грн |
| 500+ | 33.50 грн |
| 1000+ | 27.52 грн |
| AM8N20-600D |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 200V 7.5A TO-252
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET N-CH 200V 7.5A TO-252
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.10 грн |
| 10+ | 32.70 грн |
| 100+ | 29.43 грн |
| 500+ | 21.48 грн |
| 1000+ | 17.64 грн |
| 2500+ | 15.34 грн |
| AM90N03-03P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 30V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 15 V
Description: MOSFET P-CH 30V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 15 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| AM90N04-02B |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 40V 120A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 45A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 15 V
Description: MOSFET N-CH 40V 120A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 45A, 10V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24600 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.25 грн |
| 10+ | 115.07 грн |
| 100+ | 103.57 грн |
| 500+ | 75.60 грн |
| 800+ | 54.00 грн |
| AM90N04-02P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 40V 232A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 232A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V
Description: MOSFET N-CH 40V 232A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 232A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V
на замовлення 2200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.66 грн |
| 50+ | 110.64 грн |
| 100+ | 89.12 грн |
| 500+ | 72.10 грн |
| 1000+ | 57.68 грн |
| AM90N06-03P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-220
Description: MOSFET N-CH 60V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-220
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.72 грн |
| 50+ | 98.87 грн |
| 100+ | 79.64 грн |
| 500+ | 64.43 грн |
| 1000+ | 51.55 грн |
| AM90N06-04D |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 83A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 45A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11698 pF @ 15 V
Description: MOSFET N-CH 60V 83A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 45A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11698 pF @ 15 V
на замовлення 4830 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.32 грн |
| 10+ | 32.10 грн |
| 100+ | 28.89 грн |
| 500+ | 21.09 грн |
| 1000+ | 17.32 грн |
| AM90N06-04m2B |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 90A TO-263
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET N-CH 60V 90A TO-263
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.35 грн |
| 10+ | 147.78 грн |
| 100+ | 133.00 грн |
| 500+ | 97.08 грн |
| 800+ | 69.34 грн |
| AM90N06-10P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5887 pF @ 15 V
Description: MOSFET N-CH 60V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5887 pF @ 15 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.53 грн |
| 50+ | 37.66 грн |
| 100+ | 30.34 грн |
| 500+ | 24.55 грн |
| AM90N06-10PCFM |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 64A TO-220CFM
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 45A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10331 pF @ 15 V
Description: MOSFET N-CH 60V 64A TO-220CFM
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 45A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220CFM
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10331 pF @ 15 V
на замовлення 6485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 52.67 грн |
| 50+ | 40.46 грн |
| 100+ | 32.58 грн |
| 500+ | 26.36 грн |
| 1000+ | 21.09 грн |
| AM90N06-16P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 40V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2138 pF @ 15 V
Description: MOSFET N-CH 40V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2138 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.02 грн |
| 50+ | 25.42 грн |
| 100+ | 20.48 грн |
| 500+ | 16.57 грн |
| 1000+ | 13.26 грн |
| AM90N08-04B |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 80V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11678 pF @ 15 V
Description: MOSFET N-CH 80V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11678 pF @ 15 V
на замовлення 2385 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.21 грн |
| 10+ | 153.08 грн |
| 100+ | 137.78 грн |
| 500+ | 100.57 грн |
| 800+ | 71.83 грн |
| AM90N08-10B |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 80V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 44A, 4.5V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5052 pF @ 15 V
Description: MOSFET N-CH 80V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 44A, 4.5V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5052 pF @ 15 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 29.98 грн |
| AM90N08-10B-CT |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 80V 90A TO-263
Packaging: Bulk
Package / Case: TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 44A, 4.5V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5052 pF @ 15 V
Description: MOSFET N-CH 80V 90A TO-263
Packaging: Bulk
Package / Case: TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 44A, 4.5V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5052 pF @ 15 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.62 грн |
| 10+ | 57.76 грн |
| 100+ | 51.96 грн |
| 500+ | 37.93 грн |
| AM90N10-07B |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9235 pF @ 15 V
Description: MOSFET N-CH 100V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9235 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 250.79 грн |
| 10+ | 160.95 грн |
| 100+ | 144.86 грн |
| 500+ | 105.74 грн |
| 800+ | 75.53 грн |
| AM90N10-07P |
![]() |
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.30 грн |
| 50+ | 116.83 грн |
| 100+ | 94.11 грн |
| 500+ | 76.14 грн |
| AM90N10-14P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4221 pF @ 15 V
Description: MOSFET N-CH 100V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4221 pF @ 15 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| AM90N15-20P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 150V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9857 pF @ 15 V
Description: MOSFET N-CH 150V 90A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9857 pF @ 15 V
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 160.38 грн |
| 50+ | 122.63 грн |
| 100+ | 98.78 грн |
| 500+ | 79.92 грн |
| 1000+ | 63.93 грн |
| AM90N20-140B |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 200V 29A TO-263
Packaging: Strip
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 35A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 15 V
Description: MOSFET N-CH 200V 29A TO-263
Packaging: Strip
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 35A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 15 V
на замовлення 698 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.50 грн |
| 10+ | 76.69 грн |
| 100+ | 69.01 грн |
| 500+ | 50.38 грн |
| AM90N20-40P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 200V 130A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-220
Description: MOSFET N-CH 200V 130A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-220
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.15 грн |
| AM90N20-78B |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 200V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 4467 pF @ 15 V
Rds On (Max) @ Id, Vgs: 78mOhm @ 57A, 10V
Description: MOSFET N-CH 200V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 4467 pF @ 15 V
Rds On (Max) @ Id, Vgs: 78mOhm @ 57A, 10V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.73 грн |
| 10+ | 97.43 грн |
| AM9435P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 30V 7.1A SO-8
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Description: MOSFET P-CH 30V 7.1A SO-8
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.32 грн |
| 10+ | 32.10 грн |
| 100+ | 28.89 грн |
| 500+ | 21.09 грн |
| AM9926N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 20V 6.9A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 439pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N-CH 20V 6.9A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 439pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| AM9945N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 3.6A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 297 pF @ 15 V
Description: MOSFET N-CH 60V 3.6A SO-8
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 297 pF @ 15 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.16 грн |
| 19+ | 16.20 грн |
| 100+ | 14.58 грн |
| 500+ | 10.64 грн |
| 1000+ | 8.74 грн |
| AMB420N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 20V 6.9A DFN1.6X1.6
Packaging: Bulk
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 2.11W (Ta)
Supplier Device Package: 6-DFN (1.6x1.6)
Description: MOSFET N-CH 20V 6.9A DFN1.6X1.6
Packaging: Bulk
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 2.11W (Ta)
Supplier Device Package: 6-DFN (1.6x1.6)
на замовлення 900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.98 грн |
| 10+ | 59.05 грн |
| 100+ | 53.14 грн |
| 500+ | 38.79 грн |
| AMB421P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 20V 5A DFN1.6X1.6
Packaging: Bulk
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Power Dissipation (Max): 2.1W (Ta)
Supplier Device Package: 6-DFN (1.6x1.6)
Description: MOSFET P-CH 20V 5A DFN1.6X1.6
Packaging: Bulk
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Power Dissipation (Max): 2.1W (Ta)
Supplier Device Package: 6-DFN (1.6x1.6)
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.98 грн |
| 10+ | 59.05 грн |
| 100+ | 53.14 грн |
| 500+ | 38.79 грн |
| 1000+ | 31.86 грн |
| AMB423P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 25V 10.7A DFN1.6X1.6
Packaging: Bulk
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 6-DFN (1.6x1.6)
Description: MOSFET P-CH 25V 10.7A DFN1.6X1.6
Packaging: Bulk
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 6-DFN (1.6x1.6)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.98 грн |
| 10+ | 59.05 грн |
| 100+ | 53.14 грн |
| 500+ | 38.79 грн |
| 1000+ | 31.86 грн |
| AMC2M0025120D |
![]() |
Виробник: Analog Power Inc.
Description: SICFET N-CH 1200V 20A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 20V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 50 V
Description: SICFET N-CH 1200V 20A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 20V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6596.02 грн |
| 30+ | 5226.68 грн |
| 120+ | 3942.90 грн |
| AMC2M0080120D |
![]() |
Виробник: Analog Power Inc.
Description: SICFET N-CH 1200V 36A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 50 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 6.5 V
Description: SICFET N-CH 1200V 36A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 50 V
Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 6.5 V
на замовлення 1199 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2187.93 грн |
| 30+ | 1746.66 грн |
| 120+ | 1637.49 грн |
| 510+ | 1308.63 грн |
| AMC3M0040120D |
![]() |
Виробник: Analog Power Inc.
Description: SICFET N-CH 1200V 15A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 20V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): ±25V
Description: SICFET N-CH 1200V 15A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 20V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): ±25V
на замовлення 740 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2100.66 грн |
| 30+ | 1308.17 грн |
| 120+ | 1255.60 грн |
| AMG402N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 250V 3.5A SOT-89
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET N-CH 250V 3.5A SOT-89
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.81 грн |
| 11+ | 28.54 грн |
| 100+ | 25.66 грн |
| 500+ | 18.73 грн |
| 1000+ | 15.38 грн |
| AMG461P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 60V 14A SOT-89
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Description: MOSFET P-CH 60V 14A SOT-89
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.88 грн |
| 12+ | 26.42 грн |
| 100+ | 23.82 грн |
| AMIB075N15N3 |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 150V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V
Description: MOSFET N-CH 150V 90A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4329 pF @ 50 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.22 грн |
| 10+ | 86.99 грн |
| 100+ | 78.27 грн |
| AMIB108N15N3 |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 150V 100A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2236 pF @ 50 V
Description: MOSFET N-CH 150V 100A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2236 pF @ 50 V
на замовлення 98 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.22 грн |
| 10+ | 86.99 грн |
| AMIP030N10N3 |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 100A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA (Min)
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 100A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA (Min)
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 105.35 грн |
| 50+ | 80.63 грн |
| 100+ | 64.95 грн |
| AMIRF9640S |
![]() |
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 316.04 грн |
| 10+ | 200.62 грн |
| 100+ | 141.87 грн |
| 500+ | 118.75 грн |
| 800+ | 104.35 грн |
| AMIRLML6401 |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 20V 4.3A SOT-23
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Description: MOSFET P-CH 20V 4.3A SOT-23
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
на замовлення 45500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.45 грн |
| 14+ | 23.09 грн |
| 100+ | 14.88 грн |
| 500+ | 11.60 грн |
| 1000+ | 10.32 грн |
| 3000+ | 8.62 грн |
| AMIXFP60N25X3 |
![]() |
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 978.00 грн |
| 50+ | 518.27 грн |
| 100+ | 477.55 грн |
| 500+ | 396.51 грн |
| AMK431P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 30V 0.68A SOT-723
Packaging: Bulk
FET Type: P-Channel
Description: MOSFET P-CH 30V 0.68A SOT-723
Packaging: Bulk
FET Type: P-Channel
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.58 грн |
| 35+ | 8.71 грн |
| 100+ | 4.72 грн |
| 500+ | 4.20 грн |
| 1000+ | 3.96 грн |
| 2000+ | 3.50 грн |
| AMPMZ350UPEP |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 20V 0.9A SOT-883
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 16 V
Description: MOSFET N-CH 20V 0.9A SOT-883
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-883
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 16 V
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.44 грн |
| 24+ | 12.72 грн |
| 100+ | 5.22 грн |
| 500+ | 4.84 грн |
| 1000+ | 4.34 грн |
| 5000+ | 3.78 грн |
| 10000+ | 2.88 грн |
| AMR416N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 75A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7442 pF @ 15 V
Description: MOSFET N-CH 100V 75A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7442 pF @ 15 V
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 79.40 грн |
| 10+ | 51.03 грн |
| 100+ | 45.90 грн |
| 500+ | 33.50 грн |
| 1000+ | 27.52 грн |
| 3000+ | 23.93 грн |
| AMR424N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 100A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2979 pF @ 15 V
Description: MOSFET N-CH 100V 100A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2979 pF @ 15 V
на замовлення 390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.25 грн |
| 10+ | 35.05 грн |
| 100+ | 31.56 грн |
| AMR426N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 50V 180A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7723 pF @ 15 V
Description: MOSFET N-CH 50V 180A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7723 pF @ 15 V
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.67 грн |
| 12+ | 26.57 грн |
| 100+ | 23.89 грн |
| 500+ | 17.43 грн |
| 1000+ | 14.32 грн |
| AMR428N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 100A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Description: MOSFET N-CH 60V 100A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.21 грн |
| 10+ | 152.70 грн |
| 100+ | 137.43 грн |
| 500+ | 100.31 грн |
| 1000+ | 82.40 грн |
| 3000+ | 71.65 грн |
| AMR438N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 30V 112A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5770 pF @ 15 V
Description: MOSFET N-CH 30V 112A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 112A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5770 pF @ 15 V
на замовлення 2200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 108.49 грн |
| 10+ | 69.80 грн |
| 100+ | 62.85 грн |
| 500+ | 45.87 грн |
| 1000+ | 37.68 грн |
| AMR440N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 40V 100A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V
Description: MOSFET N-CH 40V 100A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7019 pF @ 15 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 162.74 грн |
| 10+ | 104.55 грн |
| 100+ | 94.08 грн |
| 500+ | 68.67 грн |
| 1000+ | 56.41 грн |
| AMR441P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 40V 125A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Description: MOSFET P-CH 40V 125A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.08 грн |
| 10+ | 91.60 грн |
| 100+ | 82.46 грн |
| 500+ | 60.19 грн |
| 1000+ | 49.44 грн |
| AMR446N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 80A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2941 pF @ 15 V
Description: MOSFET N-CH 100V 80A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2941 pF @ 15 V
на замовлення 3580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.05 грн |
| 10+ | 49.66 грн |
| 100+ | 44.73 грн |
| 500+ | 32.64 грн |
| 1000+ | 26.82 грн |
| 3000+ | 23.32 грн |
| AMR448N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 80A DFN5x6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.55)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V
Description: MOSFET N-CH 100V 80A DFN5x6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.55)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 20.37 грн |
| AMR448N-CT |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 80A DFN5x6
Packaging: Bulk
Package / Case: DFN5x6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN5x6
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V
Description: MOSFET N-CH 100V 80A DFN5x6
Packaging: Bulk
Package / Case: DFN5x6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 6.5V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN5x6
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 6.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 50 V
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.25 грн |
| 10+ | 41.87 грн |
| 100+ | 37.71 грн |
| 500+ | 27.52 грн |
| 1000+ | 22.61 грн |
| AMR452N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 20A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.55)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V
Description: MOSFET N-CH 100V 20A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.55)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.30 грн |
| AMR452N-CT |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 20A DFN5X6
Packaging: Bulk
Package / Case: DFN5x6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN5x6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V
Description: MOSFET N-CH 100V 20A DFN5X6
Packaging: Bulk
Package / Case: DFN5x6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN5x6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 404 pF @ 50 V
на замовлення 5993 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.67 грн |
| 12+ | 26.57 грн |
| 100+ | 23.89 грн |
| 500+ | 17.43 грн |
| 1000+ | 14.32 грн |
| AMR461P |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET P-CH 60V 100A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Description: MOSFET P-CH 60V 100A DFN5X6
Packaging: Bulk
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 235.07 грн |
| 10+ | 150.73 грн |
| 100+ | 135.60 грн |
| 500+ | 98.98 грн |
| 1000+ | 81.30 грн |
| 3000+ | 70.70 грн |
| AMR462N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 80A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7283 pF @ 15 V
Description: MOSFET N-CH 60V 80A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7283 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.71 грн |
| 10+ | 69.27 грн |
| 100+ | 62.31 грн |
| 500+ | 45.48 грн |
| 1000+ | 37.35 грн |
| 3000+ | 32.48 грн |
| AMR464N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 87A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 13A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V
Description: MOSFET N-CH 60V 87A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 13A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 30 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.98 грн |
| 10+ | 59.05 грн |
| 100+ | 53.14 грн |
| 500+ | 38.79 грн |
| AMR466N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 60V 28A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 484 pF @ 20 V
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V
Power Dissipation (Max): 5W (Ta), 22W (Tc)
Description: MOSFET N-CH 60V 28A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 484 pF @ 20 V
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V
Power Dissipation (Max): 5W (Ta), 22W (Tc)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.54 грн |
| 10+ | 38.69 грн |
| 100+ | 34.82 грн |
| 500+ | 25.41 грн |
| 1000+ | 20.88 грн |
| 3000+ | 18.15 грн |
| AMR472N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 100V 59A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.55)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 59A (Tc)
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Description: MOSFET N-CH 100V 59A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5.2x5.55)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 59A (Tc)
Power Dissipation (Max): 5W (Ta), 63W (Tc)
на замовлення 4519 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.23 грн |
| 15+ | 20.89 грн |
| 100+ | 18.83 грн |
| 500+ | 13.74 грн |
| 1000+ | 11.29 грн |
| 3000+ | 9.82 грн |
| AMR474N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 40V 40A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 20 V
Description: MOSFET N-CH 40V 40A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 20 V
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.52 грн |
| 13+ | 24.83 грн |
| 100+ | 22.36 грн |
| 500+ | 16.32 грн |
| 1000+ | 13.41 грн |
| AMR482N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 80V 77A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1551 pF @ 40 V
Description: MOSFET N-CH 80V 77A DFN5X6
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1551 pF @ 40 V
на замовлення 5390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.32 грн |
| 10+ | 39.22 грн |
| 100+ | 35.31 грн |
| 500+ | 25.77 грн |
| 1000+ | 21.17 грн |
| 3000+ | 18.41 грн |
| AMRA02N |
![]() |
Виробник: Analog Power Inc.
Description: MOSFET N-CH 300V 7.4A DFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 65.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 50 V
Description: MOSFET N-CH 300V 7.4A DFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 65.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.20 грн |
| 10+ | 58.29 грн |
| 100+ | 52.48 грн |
| 500+ | 38.31 грн |
| 1000+ | 31.47 грн |



























































