Продукція > BASIC SEMICONDUCTOR > Всі товари виробника BASIC SEMICONDUCTOR (192) > Сторінка 3 з 4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
B2M065120Z | BASiC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W Case: TO247-4 Mounting: THT Kind of package: tube Drain current: 33A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 60nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 85A Drain-source voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
|
|
BGH50N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 256ns |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
BGH50N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 256ns кількість в упаковці: 1 шт |
на замовлення 58 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
|
|
BGH50N65HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 256ns |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
BGH50N65HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 256ns кількість в упаковці: 1 шт |
на замовлення 34 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
BGH50N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 476ns |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
BGH50N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Field Stop; SiC SBD; Trench Turn-on time: 54ns Turn-off time: 476ns кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
BGH75N120HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Mounting: THT Type of transistor: IGBT Power dissipation: 568W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 398nC Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 200A Turn-on time: 140ns Turn-off time: 443ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
BGH75N120HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Mounting: THT Type of transistor: IGBT Power dissipation: 568W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 398nC Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 200A Turn-on time: 140ns Turn-off time: 443ns кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
BGH75N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 405W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 444nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 104ns Turn-off time: 376ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
BGH75N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 405W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 444nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 104ns Turn-off time: 376ns кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
|
BGH75N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-4 Mounting: THT Kind of package: tube Power dissipation: 405W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 444nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 84ns Turn-off time: 565ns |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
BGH75N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-4 Mounting: THT Kind of package: tube Power dissipation: 405W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 444nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 84ns Turn-off time: 565ns кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
| BTD21520EAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520EAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520EAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Mounting: SMD Operating temperature: -40...125°C Case: SOW14 Supply voltage: 3...18V DC Output current: -6...4A Type of integrated circuit: driver Number of channels: 2 Insulation voltage: 5kV Integrated circuit features: galvanically isolated Kind of package: reel; tape Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520EAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Mounting: SMD Operating temperature: -40...125°C Case: SOW14 Supply voltage: 3...18V DC Output current: -6...4A Type of integrated circuit: driver Number of channels: 2 Insulation voltage: 5kV Integrated circuit features: galvanically isolated Kind of package: reel; tape Kind of integrated circuit: gate driver кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520EBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520EBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520EBWR | BASiC SEMICONDUCTOR | BTD21520EBWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520MAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520MAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520MAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Mounting: SMD Operating temperature: -40...125°C Case: SOW14 Supply voltage: 3...18V DC Output current: -6...4A Type of integrated circuit: driver Number of channels: 2 Insulation voltage: 5kV Integrated circuit features: galvanically isolated Kind of package: reel; tape Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520MAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Mounting: SMD Operating temperature: -40...125°C Case: SOW14 Supply voltage: 3...18V DC Output current: -6...4A Type of integrated circuit: driver Number of channels: 2 Insulation voltage: 5kV Integrated circuit features: galvanically isolated Kind of package: reel; tape Kind of integrated circuit: gate driver кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520MBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520MBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520MBWR | BASiC SEMICONDUCTOR | BTD21520MBWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520SAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520SAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520SAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Mounting: SMD Operating temperature: -40...125°C Case: SOW14 Supply voltage: 3...18V DC Output current: -6...4A Type of integrated circuit: driver Number of channels: 2 Insulation voltage: 5kV Integrated circuit features: galvanically isolated Kind of package: reel; tape Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520SAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Mounting: SMD Operating temperature: -40...125°C Case: SOW14 Supply voltage: 3...18V DC Output current: -6...4A Type of integrated circuit: driver Number of channels: 2 Insulation voltage: 5kV Integrated circuit features: galvanically isolated Kind of package: reel; tape Kind of integrated circuit: gate driver кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520SBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520SBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Insulation voltage: 5kV Integrated circuit features: galvanically isolated Supply voltage: 3...18V DC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD21520SBWR | BASiC SEMICONDUCTOR | BTD21520SBWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350EBPR | BASiC SEMICONDUCTOR | BTD5350EBPR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350EBWR | BASiC SEMICONDUCTOR | BTD5350EBWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350ECPR | BASiC SEMICONDUCTOR | BTD5350ECPR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350ECWR | BASiC SEMICONDUCTOR | BTD5350ECWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350MBPR | BASiC SEMICONDUCTOR | BTD5350MBPR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350MBWR | BASiC SEMICONDUCTOR | BTD5350MBWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350MCPR | BASiC SEMICONDUCTOR | BTD5350MCPR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350MCWR | BASiC SEMICONDUCTOR | BTD5350MCWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350SBPR | BASiC SEMICONDUCTOR | BTD5350SBPR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350SBWR | BASiC SEMICONDUCTOR | BTD5350SBWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350SCPR | BASiC SEMICONDUCTOR | BTD5350SCPR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTD5350SCWR | BASiC SEMICONDUCTOR | BTD5350SCWR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTL27523BR | BASiC SEMICONDUCTOR | BTL27523BR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTL27523R | BASiC SEMICONDUCTOR | BTL27523R MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTL27524BR | BASiC SEMICONDUCTOR | BTL27524BR MOSFET/IGBT drivers |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
BTL27524R | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Kind of package: reel; tape Kind of output: non-inverting |
на замовлення 2350 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
|
BTL27524R | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOP8 Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Kind of package: reel; tape Kind of output: non-inverting кількість в упаковці: 1 шт |
на замовлення 2350 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
| BTP2842DR | BASiC SEMICONDUCTOR | BTP2842DR Voltage regulators - PWM circuits |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTP2843DR | BASiC SEMICONDUCTOR | BTP2843DR Voltage regulators - PWM circuits |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTP2844DR | BASiC SEMICONDUCTOR | BTP2844DR Voltage regulators - PWM circuits |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTP2844DSR | BASiC SEMICONDUCTOR | BTP2844DSR Voltage regulators - PWM circuits |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BTP2845DR | BASiC SEMICONDUCTOR | BTP2845DR Voltage regulators - PWM circuits |
товару немає в наявності |
В кошику од. на суму грн. |
| B2M065120Z |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Case: TO247-4
Mounting: THT
Kind of package: tube
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Case: TO247-4
Mounting: THT
Kind of package: tube
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Drain-source voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 896.70 грн |
| 2+ | 682.63 грн |
| 5+ | 620.99 грн |
| 30+ | 596.74 грн |
| BGH40N120HF |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| BGH40N120HF |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BGH40N120HS1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 685.32 грн |
| BGH40N120HS1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 822.39 грн |
| 2+ | 595.49 грн |
| 6+ | 541.73 грн |
| BGH50N65HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 922.13 грн |
| 2+ | 592.08 грн |
| 5+ | 560.23 грн |
| BGH50N65HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1106.56 грн |
| 2+ | 737.83 грн |
| 5+ | 672.27 грн |
| 600+ | 662.01 грн |
| BGH50N65HS1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 796.62 грн |
| 2+ | 613.84 грн |
| 5+ | 580.43 грн |
| BGH50N65HS1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 955.94 грн |
| 2+ | 764.94 грн |
| 5+ | 696.51 грн |
| 150+ | 670.41 грн |
| BGH50N65ZF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 702.90 грн |
| 2+ | 549.35 грн |
| 5+ | 519.04 грн |
| BGH50N65ZF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 843.48 грн |
| 2+ | 684.57 грн |
| 5+ | 622.85 грн |
| 150+ | 598.61 грн |
| BGH75N120HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
товару немає в наявності
В кошику
од. на суму грн.
| BGH75N120HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Type of transistor: IGBT
Power dissipation: 568W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Turn-on time: 140ns
Turn-off time: 443ns
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BGH75N65HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
товару немає в наявності
В кошику
од. на суму грн.
| BGH75N65HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BGH75N65ZF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 922.13 грн |
| 2+ | 632.49 грн |
| 4+ | 597.52 грн |
| BGH75N65ZF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Power dissipation: 405W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 444nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1106.56 грн |
| 2+ | 788.18 грн |
| 4+ | 717.03 грн |
| 150+ | 689.99 грн |
| BTD21520EAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EBWR |
Виробник: BASiC SEMICONDUCTOR
BTD21520EBWR MOSFET/IGBT drivers
BTD21520EBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MBWR |
Виробник: BASiC SEMICONDUCTOR
BTD21520MBWR MOSFET/IGBT drivers
BTD21520MBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Mounting: SMD
Operating temperature: -40...125°C
Case: SOW14
Supply voltage: 3...18V DC
Output current: -6...4A
Type of integrated circuit: driver
Number of channels: 2
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SBWR |
Виробник: BASiC SEMICONDUCTOR
BTD21520SBWR MOSFET/IGBT drivers
BTD21520SBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350EBPR |
Виробник: BASiC SEMICONDUCTOR
BTD5350EBPR MOSFET/IGBT drivers
BTD5350EBPR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350EBWR |
Виробник: BASiC SEMICONDUCTOR
BTD5350EBWR MOSFET/IGBT drivers
BTD5350EBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350ECPR |
Виробник: BASiC SEMICONDUCTOR
BTD5350ECPR MOSFET/IGBT drivers
BTD5350ECPR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350ECWR |
Виробник: BASiC SEMICONDUCTOR
BTD5350ECWR MOSFET/IGBT drivers
BTD5350ECWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350MBPR |
Виробник: BASiC SEMICONDUCTOR
BTD5350MBPR MOSFET/IGBT drivers
BTD5350MBPR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350MBWR |
Виробник: BASiC SEMICONDUCTOR
BTD5350MBWR MOSFET/IGBT drivers
BTD5350MBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350MCPR |
Виробник: BASiC SEMICONDUCTOR
BTD5350MCPR MOSFET/IGBT drivers
BTD5350MCPR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350MCWR |
Виробник: BASiC SEMICONDUCTOR
BTD5350MCWR MOSFET/IGBT drivers
BTD5350MCWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350SBPR |
Виробник: BASiC SEMICONDUCTOR
BTD5350SBPR MOSFET/IGBT drivers
BTD5350SBPR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350SBWR |
Виробник: BASiC SEMICONDUCTOR
BTD5350SBWR MOSFET/IGBT drivers
BTD5350SBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350SCPR |
Виробник: BASiC SEMICONDUCTOR
BTD5350SCPR MOSFET/IGBT drivers
BTD5350SCPR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTD5350SCWR |
Виробник: BASiC SEMICONDUCTOR
BTD5350SCWR MOSFET/IGBT drivers
BTD5350SCWR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTL27523BR |
Виробник: BASiC SEMICONDUCTOR
BTL27523BR MOSFET/IGBT drivers
BTL27523BR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTL27523R |
Виробник: BASiC SEMICONDUCTOR
BTL27523R MOSFET/IGBT drivers
BTL27523R MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTL27524BR |
Виробник: BASiC SEMICONDUCTOR
BTL27524BR MOSFET/IGBT drivers
BTL27524BR MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
| BTL27524R |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Kind of package: reel; tape
Kind of output: non-inverting
на замовлення 2350 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.78 грн |
| 8+ | 54.39 грн |
| 22+ | 42.11 грн |
| 60+ | 39.86 грн |
| 1000+ | 38.31 грн |
| BTL27524R |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOP8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Kind of package: reel; tape
Kind of output: non-inverting
кількість в упаковці: 1 шт
на замовлення 2350 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.34 грн |
| 5+ | 67.78 грн |
| 22+ | 50.54 грн |
| 60+ | 47.83 грн |
| 1000+ | 45.97 грн |
| BTP2842DR |
Виробник: BASiC SEMICONDUCTOR
BTP2842DR Voltage regulators - PWM circuits
BTP2842DR Voltage regulators - PWM circuits
товару немає в наявності
В кошику
од. на суму грн.
| BTP2843DR |
Виробник: BASiC SEMICONDUCTOR
BTP2843DR Voltage regulators - PWM circuits
BTP2843DR Voltage regulators - PWM circuits
товару немає в наявності
В кошику
од. на суму грн.
| BTP2844DR |
Виробник: BASiC SEMICONDUCTOR
BTP2844DR Voltage regulators - PWM circuits
BTP2844DR Voltage regulators - PWM circuits
товару немає в наявності
В кошику
од. на суму грн.
| BTP2844DSR |
Виробник: BASiC SEMICONDUCTOR
BTP2844DSR Voltage regulators - PWM circuits
BTP2844DSR Voltage regulators - PWM circuits
товару немає в наявності
В кошику
од. на суму грн.
| BTP2845DR |
Виробник: BASiC SEMICONDUCTOR
BTP2845DR Voltage regulators - PWM circuits
BTP2845DR Voltage regulators - PWM circuits
товару немає в наявності
В кошику
од. на суму грн.