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B2M035120YP BASiC SEMICONDUCTOR B2M035120YP THT N channel transistors
товару немає в наявності
В кошику  од. на суму  грн.
B2M065120H B2M065120H BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83EC9E916572C0D5&compId=B2M065120H.pdf?ci_sign=ce1d9f3ba05c916d6d50f1392ef645c96272536b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 65mΩ
Drain current: 33A
Power dissipation: 250W
Pulsed drain current: 85A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+785.75 грн
2+603.56 грн
В кошику  од. на суму  грн.
B2M065120H B2M065120H BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83EC9E916572C0D5&compId=B2M065120H.pdf?ci_sign=ce1d9f3ba05c916d6d50f1392ef645c96272536b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 65mΩ
Drain current: 33A
Power dissipation: 250W
Pulsed drain current: 85A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
1+942.90 грн
2+752.13 грн
5+684.56 грн
30+658.08 грн
В кошику  од. на суму  грн.
B2M065120R B2M065120R BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+926.61 грн
2+597.26 грн
5+564.16 грн
В кошику  од. на суму  грн.
B2M065120R B2M065120R BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)
1+1111.94 грн
2+744.27 грн
5+676.99 грн
В кошику  од. на суму  грн.
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECA8988CE9C0D5&compId=B2M065120Z.pdf?ci_sign=8950aa569e86003000b6e12cf4d9a658bef3fd74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+740.78 грн
2+558.65 грн
5+527.92 грн
В кошику  од. на суму  грн.
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECA8988CE9C0D5&compId=B2M065120Z.pdf?ci_sign=8950aa569e86003000b6e12cf4d9a658bef3fd74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)
1+888.94 грн
2+696.16 грн
5+633.50 грн
30+609.86 грн
В кошику  од. на суму  грн.
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
1+689.87 грн
2+479.07 грн
3+478.28 грн
6+452.28 грн
В кошику  од. на суму  грн.
BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)
1+827.84 грн
2+596.99 грн
3+573.93 грн
6+542.73 грн
В кошику  од. на суму  грн.
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
1+935.10 грн
2+599.62 грн
5+566.53 грн
В кошику  од. на суму  грн.
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
кількість в упаковці: 1 шт
на замовлення 57 шт:
термін постачання 14-21 дні (днів)
1+1122.12 грн
2+747.22 грн
5+679.83 грн
600+671.32 грн
В кошику  од. на суму  грн.
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF8149597E0180D4&compId=BGH50N65HS1.pdf?ci_sign=512a222d71200c717eee9e70ecf800fcbcfa85f6 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
1+807.82 грн
2+626.41 грн
5+591.74 грн
В кошику  од. на суму  грн.
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF8149597E0180D4&compId=BGH50N65HS1.pdf?ci_sign=512a222d71200c717eee9e70ecf800fcbcfa85f6 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)
1+969.38 грн
2+780.60 грн
5+710.09 грн
150+682.67 грн
В кошику  од. на суму  грн.
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF813D8F92C340D4&compId=BGH50N65ZF1.pdf?ci_sign=612acbd7b9cac9d5790092f856fc2b593da02a34 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+712.78 грн
2+560.22 грн
5+529.49 грн
В кошику  од. на суму  грн.
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF813D8F92C340D4&compId=BGH50N65ZF1.pdf?ci_sign=612acbd7b9cac9d5790092f856fc2b593da02a34 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)
1+855.33 грн
2+698.12 грн
5+635.39 грн
30+631.61 грн
150+611.75 грн
В кошику  од. на суму  грн.
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECCECE227760D5&compId=BGH75N120HF1.pdf?ci_sign=949d4a4e398410fc506a42f8d5813cc0c24ea047 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
1+801.03 грн
2+552.34 грн
5+522.40 грн
В кошику  од. на суму  грн.
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECCECE227760D5&compId=BGH75N120HF1.pdf?ci_sign=949d4a4e398410fc506a42f8d5813cc0c24ea047 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)
1+961.23 грн
2+688.30 грн
5+626.88 грн
В кошику  од. на суму  грн.
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF811ECE5D64E0D4&compId=BGH75N65HF1.pdf?ci_sign=3a179e4fb72070de62aa7ee1cebaf82200144ccd Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику  од. на суму  грн.
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF811ECE5D64E0D4&compId=BGH75N65HF1.pdf?ci_sign=3a179e4fb72070de62aa7ee1cebaf82200144ccd Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81418D7F00E0D4&compId=BGH75N65ZF1.pdf?ci_sign=9bd9110b64ab700c8fe00668cc4519cd5505647a Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+1015.71 грн
2+645.32 грн
4+609.86 грн
В кошику  од. на суму  грн.
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81418D7F00E0D4&compId=BGH75N65ZF1.pdf?ci_sign=9bd9110b64ab700c8fe00668cc4519cd5505647a Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
1+1218.85 грн
2+804.17 грн
4+731.84 грн
600+721.43 грн
В кошику  од. на суму  грн.
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350EBPR BASiC SEMICONDUCTOR BTD5350EBPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350EBWR BASiC SEMICONDUCTOR BTD5350EBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350ECPR BASiC SEMICONDUCTOR BTD5350ECPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350ECWR BASiC SEMICONDUCTOR BTD5350ECWR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350MBPR BASiC SEMICONDUCTOR BTD5350MBPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350MBWR BASiC SEMICONDUCTOR BTD5350MBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350MCPR BASiC SEMICONDUCTOR BTD5350MCPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350MCWR BASiC SEMICONDUCTOR BTD5350MCWR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350SBPR BASiC SEMICONDUCTOR BTD5350SBPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350SBWR BASiC SEMICONDUCTOR BTD5350SBWR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350SCPR BASiC SEMICONDUCTOR BTD5350SCPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350SCWR BASiC SEMICONDUCTOR BTD5350SCWR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTL27523BR BASiC SEMICONDUCTOR BTL27523BR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
B2M035120YP
Виробник: BASiC SEMICONDUCTOR
B2M035120YP THT N channel transistors
товару немає в наявності
В кошику  од. на суму  грн.
B2M065120H pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83EC9E916572C0D5&compId=B2M065120H.pdf?ci_sign=ce1d9f3ba05c916d6d50f1392ef645c96272536b
B2M065120H
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 65mΩ
Drain current: 33A
Power dissipation: 250W
Pulsed drain current: 85A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+785.75 грн
2+603.56 грн
В кошику  од. на суму  грн.
B2M065120H pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83EC9E916572C0D5&compId=B2M065120H.pdf?ci_sign=ce1d9f3ba05c916d6d50f1392ef645c96272536b
B2M065120H
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 65mΩ
Drain current: 33A
Power dissipation: 250W
Pulsed drain current: 85A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 60nC
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+942.90 грн
2+752.13 грн
5+684.56 грн
30+658.08 грн
В кошику  од. на суму  грн.
B2M065120R pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0
B2M065120R
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+926.61 грн
2+597.26 грн
5+564.16 грн
В кошику  од. на суму  грн.
B2M065120R pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECAFDA66F3E0D5&compId=B2M065120R.pdf?ci_sign=0e3de3a19474d2275883166be9641521f7f0b7d0
B2M065120R
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 150W
Case: TO263-7
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+1111.94 грн
2+744.27 грн
5+676.99 грн
В кошику  од. на суму  грн.
B2M065120Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECA8988CE9C0D5&compId=B2M065120Z.pdf?ci_sign=8950aa569e86003000b6e12cf4d9a658bef3fd74
B2M065120Z
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+740.78 грн
2+558.65 грн
5+527.92 грн
В кошику  од. на суму  грн.
B2M065120Z pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECA8988CE9C0D5&compId=B2M065120Z.pdf?ci_sign=8950aa569e86003000b6e12cf4d9a658bef3fd74
B2M065120Z
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+888.94 грн
2+696.16 грн
5+633.50 грн
30+609.86 грн
В кошику  од. на суму  грн.
BGH40N120HF
BGH40N120HF
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
BGH40N120HF
BGH40N120HF
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BGH40N120HS1
BGH40N120HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+689.87 грн
2+479.07 грн
3+478.28 грн
6+452.28 грн
В кошику  од. на суму  грн.
BGH40N120HS1
BGH40N120HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+827.84 грн
2+596.99 грн
3+573.93 грн
6+542.73 грн
В кошику  од. на суму  грн.
BGH50N65HF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7
BGH50N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 57 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+935.10 грн
2+599.62 грн
5+566.53 грн
В кошику  од. на суму  грн.
BGH50N65HF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7
BGH50N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
кількість в упаковці: 1 шт
на замовлення 57 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+1122.12 грн
2+747.22 грн
5+679.83 грн
600+671.32 грн
В кошику  од. на суму  грн.
BGH50N65HS1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF8149597E0180D4&compId=BGH50N65HS1.pdf?ci_sign=512a222d71200c717eee9e70ecf800fcbcfa85f6
BGH50N65HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+807.82 грн
2+626.41 грн
5+591.74 грн
В кошику  од. на суму  грн.
BGH50N65HS1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF8149597E0180D4&compId=BGH50N65HS1.pdf?ci_sign=512a222d71200c717eee9e70ecf800fcbcfa85f6
BGH50N65HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+969.38 грн
2+780.60 грн
5+710.09 грн
150+682.67 грн
В кошику  од. на суму  грн.
BGH50N65ZF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF813D8F92C340D4&compId=BGH50N65ZF1.pdf?ci_sign=612acbd7b9cac9d5790092f856fc2b593da02a34
BGH50N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+712.78 грн
2+560.22 грн
5+529.49 грн
В кошику  од. на суму  грн.
BGH50N65ZF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF813D8F92C340D4&compId=BGH50N65ZF1.pdf?ci_sign=612acbd7b9cac9d5790092f856fc2b593da02a34
BGH50N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+855.33 грн
2+698.12 грн
5+635.39 грн
30+631.61 грн
150+611.75 грн
В кошику  од. на суму  грн.
BGH75N120HF1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECCECE227760D5&compId=BGH75N120HF1.pdf?ci_sign=949d4a4e398410fc506a42f8d5813cc0c24ea047
BGH75N120HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+801.03 грн
2+552.34 грн
5+522.40 грн
В кошику  од. на суму  грн.
BGH75N120HF1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE83ECCECE227760D5&compId=BGH75N120HF1.pdf?ci_sign=949d4a4e398410fc506a42f8d5813cc0c24ea047
BGH75N120HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
кількість в упаковці: 1 шт
на замовлення 38 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+961.23 грн
2+688.30 грн
5+626.88 грн
В кошику  од. на суму  грн.
BGH75N65HF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF811ECE5D64E0D4&compId=BGH75N65HF1.pdf?ci_sign=3a179e4fb72070de62aa7ee1cebaf82200144ccd
BGH75N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику  од. на суму  грн.
BGH75N65HF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF811ECE5D64E0D4&compId=BGH75N65HF1.pdf?ci_sign=3a179e4fb72070de62aa7ee1cebaf82200144ccd
BGH75N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BGH75N65ZF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81418D7F00E0D4&compId=BGH75N65ZF1.pdf?ci_sign=9bd9110b64ab700c8fe00668cc4519cd5505647a
BGH75N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1015.71 грн
2+645.32 грн
4+609.86 грн
В кошику  од. на суму  грн.
BGH75N65ZF1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81418D7F00E0D4&compId=BGH75N65ZF1.pdf?ci_sign=9bd9110b64ab700c8fe00668cc4519cd5505647a
BGH75N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+1218.85 грн
2+804.17 грн
4+731.84 грн
600+721.43 грн
В кошику  од. на суму  грн.
BTD21520EAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
кількість в упаковці: 1 шт
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350EBPR
Виробник: BASiC SEMICONDUCTOR
BTD5350EBPR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTD5350EBWR
Виробник: BASiC SEMICONDUCTOR
BTD5350EBWR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTD5350ECPR
Виробник: BASiC SEMICONDUCTOR
BTD5350ECPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350ECWR
Виробник: BASiC SEMICONDUCTOR
BTD5350ECWR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTD5350MBPR
Виробник: BASiC SEMICONDUCTOR
BTD5350MBPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350MBWR
Виробник: BASiC SEMICONDUCTOR
BTD5350MBWR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTD5350MCPR
Виробник: BASiC SEMICONDUCTOR
BTD5350MCPR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTD5350MCWR
Виробник: BASiC SEMICONDUCTOR
BTD5350MCWR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTD5350SBPR
Виробник: BASiC SEMICONDUCTOR
BTD5350SBPR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTD5350SBWR
Виробник: BASiC SEMICONDUCTOR
BTD5350SBWR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTD5350SCPR
Виробник: BASiC SEMICONDUCTOR
BTD5350SCPR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
BTD5350SCWR
Виробник: BASiC SEMICONDUCTOR
BTD5350SCWR MOSFET/IGBT drivers
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В кошику  од. на суму  грн.
BTL27523BR
Виробник: BASiC SEMICONDUCTOR
BTL27523BR MOSFET/IGBT drivers
товару немає в наявності
В кошику  од. на суму  грн.
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