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B2D30120HC1 B2D30120HC1 BASiC SEMICONDUCTOR B2D30120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 95W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 30A
Power dissipation: 95W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 1.75V
Leakage current: 40µA
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 7-14 дні (днів)
1+665.15 грн
3+ 447.4 грн
7+ 407.27 грн
600+ 397.17 грн
B2D40065H1 BASiC SEMICONDUCTOR B2D40065H1 THT Schottky diodes
на замовлення 31 шт:
термін постачання 7-14 дні (днів)
1+899.85 грн
2+ 546.11 грн
5+ 516.66 грн
B2D40065HC1 BASiC SEMICONDUCTOR B2D40065HC1 THT Schottky diodes
на замовлення 62 шт:
термін постачання 7-14 дні (днів)
1+662.43 грн
3+ 415.68 грн
7+ 392.97 грн
B2D40120H1 B2D40120H1 BASiC SEMICONDUCTOR B2D40120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+1034.57 грн
2+ 688.6 грн
4+ 651.44 грн
10+ 650.73 грн
B2D40120H1 B2D40120H1 BASiC SEMICONDUCTOR B2D40120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)
1+1241.49 грн
2+ 858.1 грн
4+ 781.72 грн
10+ 780.88 грн
B2D40120HC1 B2D40120HC1 BASiC SEMICONDUCTOR B2D40120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.92V
Leakage current: 30µA
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
1+738.55 грн
2+ 479.64 грн
5+ 452.99 грн
B2D40120HC1 B2D40120HC1 BASiC SEMICONDUCTOR B2D40120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.92V
Leakage current: 30µA
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 7-14 дні (днів)
1+886.26 грн
2+ 597.7 грн
5+ 543.59 грн
600+ 530.97 грн
B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR B2D60120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 361W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward impulse current: 340A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+900.91 грн
3+ 790.98 грн
B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR B2D60120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 361W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward impulse current: 340A
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+1081.09 грн
3+ 985.68 грн
B2M035120YP B2M035120YP BASiC SEMICONDUCTOR B2M035120YP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Mounting: THT
Case: TO247PLUS-4
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
товар відсутній
B2M035120YP B2M035120YP BASiC SEMICONDUCTOR B2M035120YP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Mounting: THT
Case: TO247PLUS-4
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
кількість в упаковці: 1 шт
товар відсутній
B2M065120H B2M065120H BASiC SEMICONDUCTOR B2M065120H.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Kind of package: tube
Power dissipation: 250W
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
1+708.34 грн
2+ 499.27 грн
5+ 471.92 грн
B2M065120H B2M065120H BASiC SEMICONDUCTOR B2M065120H.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Kind of package: tube
Power dissipation: 250W
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)
1+850.01 грн
2+ 622.17 грн
5+ 566.31 грн
30+ 563.78 грн
B2M065120R B2M065120R BASiC SEMICONDUCTOR B2M065120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Kind of package: tube
Power dissipation: 150W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+734.77 грн
2+ 519.61 грн
3+ 518.9 грн
5+ 490.86 грн
30+ 488.05 грн
B2M065120R B2M065120R BASiC SEMICONDUCTOR B2M065120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Kind of package: tube
Power dissipation: 150W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)
1+881.73 грн
2+ 647.51 грн
3+ 622.69 грн
5+ 589.03 грн
30+ 585.66 грн
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-4
Kind of package: tube
Power dissipation: 250W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
товар відсутній
B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-4
Kind of package: tube
Power dissipation: 250W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
1+853.33 грн
2+ 579.21 грн
4+ 547.66 грн
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 7-14 дні (днів)
1+1024 грн
2+ 721.78 грн
4+ 657.19 грн
150+ 632.78 грн
600+ 631.94 грн
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+752.9 грн
2+ 518.2 грн
5+ 490.15 грн
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 7-14 дні (днів)
1+903.48 грн
2+ 645.76 грн
5+ 588.19 грн
150+ 564.62 грн
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+832.19 грн
2+ 571.5 грн
4+ 539.94 грн
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+998.63 грн
2+ 712.17 грн
4+ 647.93 грн
150+ 622.69 грн
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD5350EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 3kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOP8
Supply voltage: 3...18V DC
товар відсутній
BTD5350EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 3kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOP8
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товар відсутній
BTD5350EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW8
Supply voltage: 3...18V DC
товар відсутній
B2D30120HC1 B2D30120HC1.pdf
B2D30120HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 95W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Max. load current: 30A
Power dissipation: 95W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 1.75V
Leakage current: 40µA
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+665.15 грн
3+ 447.4 грн
7+ 407.27 грн
600+ 397.17 грн
B2D40065H1
Виробник: BASiC SEMICONDUCTOR
B2D40065H1 THT Schottky diodes
на замовлення 31 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+899.85 грн
2+ 546.11 грн
5+ 516.66 грн
B2D40065HC1
Виробник: BASiC SEMICONDUCTOR
B2D40065HC1 THT Schottky diodes
на замовлення 62 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+662.43 грн
3+ 415.68 грн
7+ 392.97 грн
B2D40120H1 B2D40120H1.pdf
B2D40120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1034.57 грн
2+ 688.6 грн
4+ 651.44 грн
10+ 650.73 грн
B2D40120H1 B2D40120H1.pdf
B2D40120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1241.49 грн
2+ 858.1 грн
4+ 781.72 грн
10+ 780.88 грн
B2D40120HC1 B2D40120HC1.pdf
B2D40120HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.92V
Leakage current: 30µA
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+738.55 грн
2+ 479.64 грн
5+ 452.99 грн
B2D40120HC1 B2D40120HC1.pdf
B2D40120HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 112W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 40A
Power dissipation: 112W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 180A
Max. forward voltage: 1.92V
Leakage current: 30µA
кількість в упаковці: 1 шт
на замовлення 77 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+886.26 грн
2+ 597.7 грн
5+ 543.59 грн
600+ 530.97 грн
B2D60120H1 B2D60120H1.pdf
B2D60120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 361W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward impulse current: 340A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+900.91 грн
3+ 790.98 грн
B2D60120H1 B2D60120H1.pdf
B2D60120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; 361W; TO247-2
Type of diode: Schottky rectifying
Case: TO247-2
Mounting: THT
Max. forward voltage: 2.1V
Power dissipation: 361W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 70µA
Max. forward impulse current: 340A
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1081.09 грн
3+ 985.68 грн
B2M035120YP B2M035120YP.pdf
B2M035120YP
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Mounting: THT
Case: TO247PLUS-4
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
товар відсутній
B2M035120YP B2M035120YP.pdf
B2M035120YP
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 115nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 190A
Mounting: THT
Case: TO247PLUS-4
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
кількість в упаковці: 1 шт
товар відсутній
B2M065120H B2M065120H.pdf
B2M065120H
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Kind of package: tube
Power dissipation: 250W
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+708.34 грн
2+ 499.27 грн
5+ 471.92 грн
B2M065120H B2M065120H.pdf
B2M065120H
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-3
Kind of package: tube
Power dissipation: 250W
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+850.01 грн
2+ 622.17 грн
5+ 566.31 грн
30+ 563.78 грн
B2M065120R B2M065120R.pdf
B2M065120R
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Kind of package: tube
Power dissipation: 150W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+734.77 грн
2+ 519.61 грн
3+ 518.9 грн
5+ 490.86 грн
30+ 488.05 грн
B2M065120R B2M065120R.pdf
B2M065120R
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 85A; 150W
Polarisation: unipolar
Case: TO263-7
Kind of package: tube
Power dissipation: 150W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: SMD
Drain-source voltage: 1.2kV
Drain current: 24A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+881.73 грн
2+ 647.51 грн
3+ 622.69 грн
5+ 589.03 грн
30+ 585.66 грн
B2M065120Z B2M065120Z.pdf
B2M065120Z
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-4
Kind of package: tube
Power dissipation: 250W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
товар відсутній
B2M065120Z B2M065120Z.pdf
B2M065120Z
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Polarisation: unipolar
Case: TO247-4
Kind of package: tube
Power dissipation: 250W
Features of semiconductor devices: Kelvin terminal
Gate charge: 60nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 85A
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
BGH40N120HF
BGH40N120HF
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH40N120HF
BGH40N120HF
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH40N120HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH40N120HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+853.33 грн
2+ 579.21 грн
4+ 547.66 грн
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+1024 грн
2+ 721.78 грн
4+ 657.19 грн
150+ 632.78 грн
600+ 631.94 грн
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+752.9 грн
2+ 518.2 грн
5+ 490.15 грн
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 476ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+903.48 грн
2+ 645.76 грн
5+ 588.19 грн
150+ 564.62 грн
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+832.19 грн
2+ 571.5 грн
4+ 539.94 грн
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 405W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+998.63 грн
2+ 712.17 грн
4+ 647.93 грн
150+ 622.69 грн
BTD21520EAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520MBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520MBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD21520SBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
товар відсутній
BTD21520SBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOW14
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Insulation voltage: 5kV
кількість в упаковці: 1 шт
товар відсутній
BTD5350EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 3kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOP8
Supply voltage: 3...18V DC
товар відсутній
BTD5350EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP8; 10A; Ch: 1; 3÷18VDC; 3kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 3kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOP8
Supply voltage: 3...18V DC
кількість в упаковці: 1 шт
товар відсутній
BTD5350EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW8; 10A; Ch: 1; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 10A
Type of integrated circuit: driver
Number of channels: 1
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated; UVLO (UnderVoltage LockOut)
Kind of integrated circuit: gate driver
Mounting: SMD
Case: SOW8
Supply voltage: 3...18V DC
товар відсутній
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