Продукція > BASIC SEMICONDUCTOR > Всі товари виробника BASIC SEMICONDUCTOR (201) > Сторінка 2 з 4
Фото | Назва | Виробник | Інформація |
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B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 80 шт: термін постачання 14-21 дні (днів) |
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B2D08065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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B2D08065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 14-21 дні (днів) |
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B2D10065E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D10065E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D10065F | BASiC SEMICONDUCTOR | B2D10065F SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D10065F1 | BASiC SEMICONDUCTOR | B2D10065F1 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D10065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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B2D10065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W кількість в упаковці: 1 шт |
на замовлення 222 шт: термін постачання 14-21 дні (днів) |
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B2D10065KF1 | BASiC SEMICONDUCTOR | B2D10065KF1 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D10065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Mounting: THT Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC Case: TO220ISO Leakage current: 10µA Max. forward impulse current: 85A Max. forward voltage: 1.7V Load current: 10A Power dissipation: 47W Max. off-state voltage: 650V Kind of package: tube |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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B2D10065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Mounting: THT Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC Case: TO220ISO Leakage current: 10µA Max. forward impulse current: 85A Max. forward voltage: 1.7V Load current: 10A Power dissipation: 47W Max. off-state voltage: 650V Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 63 шт: термін постачання 14-21 дні (днів) |
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B2D10065Q | BASiC SEMICONDUCTOR | B2D10065Q SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D10120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D10120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D10120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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B2D10120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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B2D10120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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B2D10120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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B2D10120K1 | BASiC SEMICONDUCTOR | B2D10120K1 THT Schottky diodes |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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B2D15120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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B2D15120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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B2D16065HC1 | BASiC SEMICONDUCTOR | B2D16065HC1 THT Schottky diodes |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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B2D16120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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B2D16120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W кількість в упаковці: 1 шт |
на замовлення 33 шт: термін постачання 14-21 дні (днів) |
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B2D20065F1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode |
на замовлення 520 шт: термін постачання 21-30 дні (днів) |
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B2D20065F1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 520 шт: термін постачання 14-21 дні (днів) |
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B2D20065H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Kind of package: tube Power dissipation: 130W |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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B2D20065H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Kind of package: tube Power dissipation: 130W кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
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B2D20065HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.75V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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B2D20065HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.75V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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B2D20065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B2D20065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B2D20065TF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO3PF Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Power dissipation: 33W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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B2D20065TF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO3PF Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Power dissipation: 33W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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B2D20120F1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Leakage current: 33µA Power dissipation: 122W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B2D20120F1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.8V Max. forward impulse current: 180A Kind of package: reel; tape Leakage current: 33µA Power dissipation: 122W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B2D20120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.78V Max. forward impulse current: 190A Kind of package: tube Leakage current: 40µA Power dissipation: 159W |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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B2D20120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.78V Max. forward impulse current: 190A Kind of package: tube Leakage current: 40µA Power dissipation: 159W кількість в упаковці: 1 шт |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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B2D20120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 90A Kind of package: tube Leakage current: 40µA Max. load current: 20A Power dissipation: 60W |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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B2D20120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 90A Kind of package: tube Leakage current: 40µA Max. load current: 20A Power dissipation: 60W кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 14-21 дні (днів) |
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B2D30065H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube Case: TO247-2 Mounting: THT Kind of package: tube Load current: 30A Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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B2D30065H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube Case: TO247-2 Mounting: THT Kind of package: tube Load current: 30A Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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B2D30065HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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B2D30065HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 44 шт: термін постачання 14-21 дні (днів) |
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B2D30120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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B2D30120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 14 шт: термін постачання 14-21 дні (днів) |
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B2D30120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 135A Leakage current: 40µA Kind of package: tube Max. load current: 30A Power dissipation: 95W |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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B2D30120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 135A Leakage current: 40µA Kind of package: tube Max. load current: 30A Power dissipation: 95W кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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B2D40065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; tube Case: TO247-2 Mounting: THT Kind of package: tube Load current: 40A Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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B2D40065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; tube Case: TO247-2 Mounting: THT Kind of package: tube Load current: 40A Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
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B2D40065HC1 | BASiC SEMICONDUCTOR | B2D40065HC1 THT Schottky diodes |
на замовлення 47 шт: термін постачання 14-21 дні (днів) |
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B2D40120H1 | BASiC SEMICONDUCTOR | B2D40120H1 THT Schottky diodes |
на замовлення 38 шт: термін постачання 14-21 дні (днів) |
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B2D40120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.92V Load current: 20A x2 Max. load current: 40A Max. forward impulse current: 180A Power dissipation: 112W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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B2D40120HC1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.92V Load current: 20A x2 Max. load current: 40A Max. forward impulse current: 180A Power dissipation: 112W Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 76 шт: термін постачання 14-21 дні (днів) |
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B2D60120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 70µA Max. forward voltage: 2.1V Load current: 60A Max. forward impulse current: 340A Power dissipation: 361W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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B2D60120H1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 70µA Max. forward voltage: 2.1V Load current: 60A Max. forward impulse current: 340A Power dissipation: 361W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 21 шт: термін постачання 14-21 дні (днів) |
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B2M032120Y | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 60A Pulsed drain current: 190A Power dissipation: 375W Case: TO247PLUS-4 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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B2M032120Y | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 60A Pulsed drain current: 190A Power dissipation: 375W Case: TO247PLUS-4 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC кількість в упаковці: 1 шт |
на замовлення 51 шт: термін постачання 14-21 дні (днів) |
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B2D08065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
на замовлення 80 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 120.49 грн |
5+ | 100.07 грн |
11+ | 85.89 грн |
30+ | 81.16 грн |
B2D08065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 80 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.59 грн |
5+ | 124.70 грн |
11+ | 103.06 грн |
30+ | 97.39 грн |
100+ | 96.44 грн |
B2D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 115.40 грн |
5+ | 96.13 грн |
11+ | 85.89 грн |
25+ | 85.10 грн |
30+ | 81.16 грн |
B2D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 138.48 грн |
5+ | 119.79 грн |
11+ | 103.06 грн |
25+ | 102.12 грн |
30+ | 97.39 грн |
100+ | 92.66 грн |
B2D10065E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
B2D10065E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B2D10065F |
Виробник: BASiC SEMICONDUCTOR
B2D10065F SMD Schottky diodes
B2D10065F SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D10065F1 |
Виробник: BASiC SEMICONDUCTOR
B2D10065F1 SMD Schottky diodes
B2D10065F1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D10065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
на замовлення 222 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 151.04 грн |
5+ | 126.07 грн |
10+ | 96.13 грн |
27+ | 91.40 грн |
B2D10065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
на замовлення 222 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 181.25 грн |
5+ | 157.10 грн |
10+ | 115.35 грн |
27+ | 109.68 грн |
B2D10065KF1 |
Виробник: BASiC SEMICONDUCTOR
B2D10065KF1 THT Schottky diodes
B2D10065KF1 THT Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D10065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
на замовлення 63 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 172.25 грн |
5+ | 144.19 грн |
9+ | 110.31 грн |
23+ | 104.80 грн |
B2D10065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 63 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 206.71 грн |
5+ | 179.69 грн |
9+ | 132.37 грн |
23+ | 125.75 грн |
B2D10065Q |
Виробник: BASiC SEMICONDUCTOR
B2D10065Q SMD Schottky diodes
B2D10065Q SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D10120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
B2D10120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B2D10120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 221.47 грн |
5+ | 185.95 грн |
7+ | 141.83 грн |
18+ | 133.95 грн |
B2D10120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 265.76 грн |
5+ | 231.73 грн |
7+ | 170.19 грн |
18+ | 160.74 грн |
600+ | 158.85 грн |
B2D10120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 209.59 грн |
5+ | 174.92 грн |
7+ | 137.10 грн |
B2D10120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 251.51 грн |
5+ | 217.98 грн |
7+ | 164.52 грн |
19+ | 156.01 грн |
600+ | 150.34 грн |
B2D10120K1 |
Виробник: BASiC SEMICONDUCTOR
B2D10120K1 THT Schottky diodes
B2D10120K1 THT Schottky diodes
на замовлення 7 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 370.65 грн |
5+ | 226.93 грн |
14+ | 214.63 грн |
B2D15120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 402.21 грн |
3+ | 336.45 грн |
4+ | 284.44 грн |
9+ | 268.69 грн |
B2D15120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 482.65 грн |
3+ | 419.27 грн |
4+ | 341.33 грн |
9+ | 322.42 грн |
30+ | 319.59 грн |
B2D16065HC1 |
Виробник: BASiC SEMICONDUCTOR
B2D16065HC1 THT Schottky diodes
B2D16065HC1 THT Schottky diodes
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 400.17 грн |
5+ | 242.05 грн |
13+ | 228.82 грн |
B2D16120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
на замовлення 33 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 319.90 грн |
5+ | 204.86 грн |
13+ | 193.83 грн |
B2D16120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 383.88 грн |
5+ | 255.29 грн |
13+ | 232.60 грн |
600+ | 228.82 грн |
B2D20065F1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
на замовлення 520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 262.20 грн |
5+ | 218.26 грн |
12+ | 206.44 грн |
25+ | 197.77 грн |
B2D20065F1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 314.64 грн |
5+ | 271.98 грн |
12+ | 247.73 грн |
25+ | 237.33 грн |
B2D20065H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
на замовлення 29 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 333.48 грн |
3+ | 278.14 грн |
5+ | 213.53 грн |
12+ | 201.71 грн |
B2D20065H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 400.17 грн |
3+ | 346.61 грн |
5+ | 256.24 грн |
12+ | 242.05 грн |
B2D20065HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 333.48 грн |
5+ | 223.77 грн |
12+ | 211.95 грн |
B2D20065HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 400.17 грн |
5+ | 278.86 грн |
12+ | 254.35 грн |
150+ | 247.73 грн |
600+ | 244.89 грн |
B2D20065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
B2D20065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B2D20065TF |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 240.99 грн |
5+ | 198.56 грн |
30+ | 196.98 грн |
B2D20065TF |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 289.18 грн |
5+ | 247.44 грн |
30+ | 236.38 грн |
B2D20120F1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
товару немає в наявності
В кошику
од. на суму грн.
B2D20120F1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B2D20120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 414.94 грн |
4+ | 272.63 грн |
10+ | 257.66 грн |
30+ | 256.87 грн |
B2D20120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 497.93 грн |
4+ | 339.73 грн |
10+ | 309.19 грн |
30+ | 308.24 грн |
600+ | 296.89 грн |
B2D20120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 414.94 грн |
4+ | 265.53 грн |
10+ | 251.35 грн |
B2D20120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Max. load current: 20A
Power dissipation: 60W
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 497.93 грн |
4+ | 330.90 грн |
10+ | 301.62 грн |
600+ | 296.89 грн |
B2D30065H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 20 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 535.43 грн |
3+ | 379.00 грн |
7+ | 358.51 грн |
B2D30065H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 642.52 грн |
3+ | 472.29 грн |
7+ | 430.21 грн |
30+ | 426.43 грн |
B2D30065HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 44 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 501.49 грн |
3+ | 320.69 грн |
8+ | 303.36 грн |
B2D30065HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 601.79 грн |
3+ | 399.63 грн |
8+ | 364.03 грн |
600+ | 359.30 грн |
B2D30120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 812.06 грн |
2+ | 569.68 грн |
5+ | 538.16 грн |
B2D30120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 974.47 грн |
2+ | 709.91 грн |
5+ | 645.79 грн |
30+ | 643.90 грн |
B2D30120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 135A
Leakage current: 40µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 95W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 135A
Leakage current: 40µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 95W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 622.83 грн |
3+ | 410.51 грн |
7+ | 388.45 грн |
B2D30120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 135A
Leakage current: 40µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 95W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; 95W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 135A
Leakage current: 40µA
Kind of package: tube
Max. load current: 30A
Power dissipation: 95W
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 747.40 грн |
3+ | 511.56 грн |
7+ | 466.14 грн |
150+ | 462.36 грн |
600+ | 448.18 грн |
B2D40065H1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 40A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 40A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 737.39 грн |
2+ | 546.83 грн |
5+ | 516.89 грн |
B2D40065H1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 40A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Load current: 40A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 884.86 грн |
2+ | 681.43 грн |
5+ | 620.26 грн |
30+ | 596.63 грн |
B2D40065HC1 |
Виробник: BASiC SEMICONDUCTOR
B2D40065HC1 THT Schottky diodes
B2D40065HC1 THT Schottky diodes
на замовлення 47 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 744.34 грн |
3+ | 469.93 грн |
7+ | 444.40 грн |
B2D40120H1 |
Виробник: BASiC SEMICONDUCTOR
B2D40120H1 THT Schottky diodes
B2D40120H1 THT Schottky diodes
на замовлення 38 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1495.82 грн |
2+ | 941.74 грн |
4+ | 889.74 грн |
B2D40120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.92V
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 180A
Power dissipation: 112W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.92V
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 180A
Power dissipation: 112W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 829.88 грн |
2+ | 547.62 грн |
5+ | 517.67 грн |
B2D40120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.92V
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 180A
Power dissipation: 112W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 112W
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.92V
Load current: 20A x2
Max. load current: 40A
Max. forward impulse current: 180A
Power dissipation: 112W
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 76 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 995.85 грн |
2+ | 682.41 грн |
5+ | 621.21 грн |
150+ | 619.32 грн |
600+ | 596.63 грн |
B2D60120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 70µA
Max. forward voltage: 2.1V
Load current: 60A
Max. forward impulse current: 340A
Power dissipation: 361W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 70µA
Max. forward voltage: 2.1V
Load current: 60A
Max. forward impulse current: 340A
Power dissipation: 361W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 21 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1019.95 грн |
3+ | 895.88 грн |
B2D60120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 70µA
Max. forward voltage: 2.1V
Load current: 60A
Max. forward impulse current: 340A
Power dissipation: 361W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 70µA
Max. forward voltage: 2.1V
Load current: 60A
Max. forward impulse current: 340A
Power dissipation: 361W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1223.94 грн |
3+ | 1116.41 грн |
30+ | 1059.93 грн |
B2M032120Y |
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Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 51 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1217.66 грн |
2+ | 856.49 грн |
3+ | 809.21 грн |
B2M032120Y |
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Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 190A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 60A
Pulsed drain current: 190A
Power dissipation: 375W
Case: TO247PLUS-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 51 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1461.20 грн |
2+ | 1067.31 грн |
3+ | 971.05 грн |