Продукція > BASIC SEMICONDUCTOR > Всі товари виробника BASIC SEMICONDUCTOR (89) > Сторінка 2 з 2
Обрати Сторінку:
[ << Попередня Сторінка ]
1
2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| B3DM060065N | BASiC SEMICONDUCTOR |
 Category: Diode modulesDescription: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw Load current: 60A x2 Max. off-state voltage: 650V Max. load current: 360A Max. forward impulse current: 420A Kind of package: tube Type of semiconductor module: diode Semiconductor structure: double independent Case: SOT227 Technology: SiC Features of semiconductor devices: Schottky Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | |||||||||||||
| B3DM060120N | BASiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 60A x2 Case: SOT227 Max. forward impulse current: 520A Electrical mounting: screw Max. load current: 360A Mechanical mounting: screw Technology: SiC Features of semiconductor devices: Schottky Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | |||||||||||||
| B3DM100120N | BASiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227 Max. forward impulse current: 700A Electrical mounting: screw Max. load current: 600A Mechanical mounting: screw Technology: SiC Features of semiconductor devices: Schottky Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | |||||||||||||
| B3M040120R | BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 44A Pulsed drain current: 108A Power dissipation: 300W Case: TO263-7 Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
 |
BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Collector current: 40A |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
|
BGH50N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
|
BGH50N65HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 256ns Technology: Field Stop; SiC SBD; Trench |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
 |
BGH50N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 54ns Turn-off time: 476ns Technology: Field Stop; SiC SBD; Trench |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
 |
BGH75N120HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Turn-off time: 443ns Gate-emitter voltage: ±20V Power dissipation: 568W Collector current: 75A Pulsed collector current: 200A Collector-emitter voltage: 1.2kV Technology: Field Stop; SiC SBD; Trench Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 140ns Gate charge: 398nC |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
|
|
BGH75N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-3 Mounting: THT Gate charge: 444nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 104ns Turn-off time: 376ns Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BGH75N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-4 Mounting: THT Gate charge: 444nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 84ns Turn-off time: 565ns Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
| BTD21520EAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520EAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520EBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520EBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520MAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520MAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520MBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520MBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520SAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520SAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520SBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520SBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
BTL27524R | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC Type of integrated circuit: driver Case: SOP8 Mounting: SMD Kind of integrated circuit: gate driver; low-side Kind of output: non-inverting Kind of package: reel; tape Operating temperature: -40...140°C Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...20V DC |
на замовлення 2343 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
| BTP3843DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Case: SOP8 Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Kind of package: reel; tape Mounting: SMD Operating temperature: 0...70°C Output current: 1A Frequency: 0.5MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTP3844DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTP3845DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTP3845DSR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: MSOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| B3DM060065N |
|
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Load current: 60A x2
Max. off-state voltage: 650V
Max. load current: 360A
Max. forward impulse current: 420A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Load current: 60A x2
Max. off-state voltage: 650V
Max. load current: 360A
Max. forward impulse current: 420A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| B3DM060120N |
|
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227
Max. forward impulse current: 520A
Electrical mounting: screw
Max. load current: 360A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 60A x2
Case: SOT227
Max. forward impulse current: 520A
Electrical mounting: screw
Max. load current: 360A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| B3DM100120N |
|
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227
Max. forward impulse current: 700A
Electrical mounting: screw
Max. load current: 600A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227
Max. forward impulse current: 700A
Electrical mounting: screw
Max. load current: 600A
Mechanical mounting: screw
Technology: SiC
Features of semiconductor devices: Schottky
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| B3M040120R |
|
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BGH40N120HF |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
товару немає в наявності
В кошику
од. на суму грн.
| BGH40N120HS1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Collector current: 40A
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 698.01 грн |
| 3+ | 584.17 грн |
| 10+ | 516.86 грн |
| 30+ | 463.68 грн |
| BGH50N65HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 934.26 грн |
| 5+ | 785.26 грн |
| 30+ | 691.36 грн |
| BGH50N65HS1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 851.93 грн |
| 5+ | 711.31 грн |
| 30+ | 628.21 грн |
| BGH50N65ZF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 751.70 грн |
| 5+ | 628.21 грн |
| BGH75N120HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 443ns
Gate-emitter voltage: ±20V
Power dissipation: 568W
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 140ns
Gate charge: 398nC
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 443ns
Gate-emitter voltage: ±20V
Power dissipation: 568W
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 140ns
Gate charge: 398nC
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 799.13 грн |
| 3+ | 670.59 грн |
| BGH75N65HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 104ns
Turn-off time: 376ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 104ns
Turn-off time: 376ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
товару немає в наявності
В кошику
од. на суму грн.
| BGH75N65ZF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 84ns
Turn-off time: 565ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1014.80 грн |
| 5+ | 845.09 грн |
| BTD21520EAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520EBWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520MBWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику
од. на суму грн.
| BTD21520SBWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику
од. на суму грн.
| BTL27524R |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Type of integrated circuit: driver
Case: SOP8
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Type of integrated circuit: driver
Case: SOP8
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
на замовлення 2343 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 74.28 грн |
| 8+ | 59.33 грн |
| 25+ | 52.10 грн |
| 100+ | 46.70 грн |
| 250+ | 43.79 грн |
| 1000+ | 42.38 грн |
| BTP3843DR |
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
товару немає в наявності
В кошику
од. на суму грн.
| BTP3844DR |
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTP3845DR |
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTP3845DSR |
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
Обрати Сторінку:
[ << Попередня Сторінка ]
1
2