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| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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B2M600170HH | BASiC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W Case: TO247-3 Kind of package: tube On-state resistance: 0.6Ω Mounting: THT Pulsed drain current: 10A Power dissipation: 75W Gate charge: 14nC Polarisation: unipolar Technology: SiC Drain current: 5A Kind of channel: enhancement Drain-source voltage: 1.7kV Type of transistor: N-MOSFET Gate-source voltage: -4...18V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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B3D04065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 65W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 36A Kind of package: tube Power dissipation: 65W |
на замовлення 350 шт: термін постачання 14-30 дні (днів) |
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B3D04065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220ISO; 54W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220ISO Max. forward impulse current: 36A Kind of package: tube Power dissipation: 54W |
на замовлення 497 шт: термін постачання 14-30 дні (днів) |
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| B3D05120E | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 45A Kind of package: reel; tape Power dissipation: 101W |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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| B3D05120K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 115W; tube Type of diode: Schottky rectifying Case: TO220-2 Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 45A Kind of package: tube Power dissipation: 115W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B3D10120H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; 181W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 90A Kind of package: tube Power dissipation: 181W |
на замовлення 296 шт: термін постачання 14-30 дні (днів) |
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| B3D120040HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 400V; 60Ax2; TO247-3; 417W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.4kV Load current: 60A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward impulse current: 0.3kA Power dissipation: 417W Kind of package: tube Max. load current: 120A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| B3D15120H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; 273W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 135A Power dissipation: 273W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3D20065F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape Power dissipation: 187W Case: TO263-3 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 140A Max. off-state voltage: 650V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3D20065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube Power dissipation: 268W Case: TO247-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 150A Max. off-state voltage: 650V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3D20065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W Power dissipation: 150W Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 90A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3D20065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube Power dissipation: 227W Case: TO220-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 20A Max. forward impulse current: 140A Max. off-state voltage: 650V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3D20065TF | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube Power dissipation: 65W Case: TO3PF Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Load current: 10A x2 Max. load current: 20A Max. forward impulse current: 75A Max. off-state voltage: 650V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3D20120F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO263-2 Max. forward impulse current: 160A Kind of package: reel; tape Power dissipation: 273W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3D20120H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 160A Kind of package: tube Power dissipation: 259W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3D20120HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 20A Max. forward impulse current: 90A Kind of package: tube Power dissipation: 167W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B3D30065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; 268W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 210A Kind of package: tube Power dissipation: 268W |
на замовлення 231 шт: термін постачання 14-30 дні (днів) |
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B3D50120H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 750W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 0.4kA Kind of package: tube Power dissipation: 750W |
на замовлення 293 шт: термін постачання 14-30 дні (днів) |
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| B3D60120H2 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W Power dissipation: 938W Case: TO247-2 Mounting: THT Kind of package: tube Max. forward impulse current: 540A Technology: SiC Max. off-state voltage: 1.2kV Load current: 60A Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| B3DM060065N | BASiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw Technology: SiC Features of semiconductor devices: Schottky Mechanical mounting: screw Max. off-state voltage: 650V Electrical mounting: screw Load current: 60A x2 Max. load current: 360A Kind of package: tube Semiconductor structure: double independent Case: SOT227 Max. forward impulse current: 420A Type of semiconductor module: diode |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. | |||||||||||||
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B3M040120H | BASiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W Case: TO247-3 Mounting: THT Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -4...18V Kind of package: tube On-state resistance: 40mΩ Pulsed drain current: 124A Power dissipation: 312W Gate charge: 85nC Polarisation: unipolar Technology: SiC Drain current: 45A Kind of channel: enhancement |
на замовлення 171 шт: термін постачання 14-30 дні (днів) |
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| B3M040120R | BASiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 44A Pulsed drain current: 108A Power dissipation: 300W Case: TO263-7 Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
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BGH40N120HF | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGH40N120HS1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 40A Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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BGH75N120HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 568W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 398nC Kind of package: tube Turn-on time: 140ns Turn-off time: 443ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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BGH75N65HF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 104ns Turn-off time: 376ns Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 405W Gate charge: 444nC Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGH75N65ZF1 | BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-4 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 84ns Turn-off time: 565ns Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 405W Gate charge: 444nC Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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| BTD21520EAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520EAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520EBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520EBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520MAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520MAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520MBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520MBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520SAPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520SAWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520SBPR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOP16 Output current: -6...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 3...18V DC Insulation voltage: 5kV Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BTD21520SBWR | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV Operating temperature: -40...125°C Mounting: SMD Output current: -6...4A Number of channels: 2 Supply voltage: 3...18V DC Insulation voltage: 5kV Kind of package: reel; tape Type of integrated circuit: driver Case: SOW14 Integrated circuit features: galvanically isolated Kind of integrated circuit: gate driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BTL27524R | BASiC SEMICONDUCTOR |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC Operating temperature: -40...140°C Output current: -5...5A Type of integrated circuit: driver Kind of output: non-inverting Kind of package: reel; tape Case: SOP8 Kind of integrated circuit: gate driver; low-side Number of channels: 2 Mounting: SMD Supply voltage: 4.5...20V DC |
на замовлення 2197 шт: термін постачання 14-30 дні (днів) |
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BTP3843DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BTP3844DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BTP3845DR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: SOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BTP3845DSR | BASiC SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 0.5MHz Case: MSOP8 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| B2M600170HH |
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Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W
Case: TO247-3
Kind of package: tube
On-state resistance: 0.6Ω
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 75W
Gate charge: 14nC
Polarisation: unipolar
Technology: SiC
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 10A; 75W
Case: TO247-3
Kind of package: tube
On-state resistance: 0.6Ω
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 75W
Gate charge: 14nC
Polarisation: unipolar
Technology: SiC
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
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Мінімальне замовлення: 300 шт
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| B3D04065K |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 65W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 36A
Kind of package: tube
Power dissipation: 65W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; 65W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 36A
Kind of package: tube
Power dissipation: 65W
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.05 грн |
| 16+ | 26.58 грн |
| 50+ | 19.81 грн |
| 250+ | 16.93 грн |
| B3D04065KS |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220ISO; 54W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward impulse current: 36A
Kind of package: tube
Power dissipation: 54W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220ISO; 54W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward impulse current: 36A
Kind of package: tube
Power dissipation: 54W
на замовлення 497 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.20 грн |
| 13+ | 33.01 грн |
| 50+ | 28.78 грн |
| B3D05120E |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: reel; tape
Power dissipation: 101W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: reel; tape
Power dissipation: 101W
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.61 грн |
| 14+ | 31.41 грн |
| 100+ | 23.87 грн |
| 500+ | 22.01 грн |
| 1000+ | 20.15 грн |
| 2500+ | 18.88 грн |
| B3D05120K |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 115W; tube
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: tube
Power dissipation: 115W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 115W; tube
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: tube
Power dissipation: 115W
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| B3D10120H |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; 181W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 181W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; 181W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 181W
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.22 грн |
| 10+ | 66.87 грн |
| 30+ | 58.41 грн |
| 120+ | 55.87 грн |
| B3D120040HC |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 400V; 60Ax2; TO247-3; 417W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 0.3kA
Power dissipation: 417W
Kind of package: tube
Max. load current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 400V; 60Ax2; TO247-3; 417W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 0.3kA
Power dissipation: 417W
Kind of package: tube
Max. load current: 120A
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Мінімальне замовлення: 2500 шт
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| B3D15120H |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 135A
Power dissipation: 273W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 135A
Power dissipation: 273W
Kind of package: tube
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| B3D20065F |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape
Power dissipation: 187W
Case: TO263-3
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape
Power dissipation: 187W
Case: TO263-3
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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| B3D20065H |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube
Power dissipation: 268W
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube
Power dissipation: 268W
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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| B3D20065HC |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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| B3D20065K |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube
Power dissipation: 227W
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube
Power dissipation: 227W
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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| B3D20065TF |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube
Power dissipation: 65W
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube
Power dissipation: 65W
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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| B3D20120F |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
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| B3D20120H |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
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| B3D20120HC |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
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| B3D30065H |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; 268W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 210A
Kind of package: tube
Power dissipation: 268W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; 268W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 210A
Kind of package: tube
Power dissipation: 268W
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.78 грн |
| 10+ | 97.35 грн |
| 30+ | 86.34 грн |
| 120+ | 80.42 грн |
| B3D50120H |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 750W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 750W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 750W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 0.4kA
Kind of package: tube
Power dissipation: 750W
на замовлення 293 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 259.81 грн |
| 10+ | 216.71 грн |
| 30+ | 191.31 грн |
| 120+ | 180.31 грн |
| B3D60120H2 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W
Power dissipation: 938W
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 540A
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W
Power dissipation: 938W
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 540A
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| B3DM060065N |
|
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 60A x2
Max. load current: 360A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227
Max. forward impulse current: 420A
Type of semiconductor module: diode
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 60A x2
Max. load current: 360A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227
Max. forward impulse current: 420A
Type of semiconductor module: diode
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Мінімальне замовлення: 150 шт
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| B3M040120H |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 124A
Power dissipation: 312W
Gate charge: 85nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 124A
Power dissipation: 312W
Gate charge: 85nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
на замовлення 171 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 193.27 грн |
| 10+ | 161.68 грн |
| 30+ | 143.06 грн |
| 120+ | 128.67 грн |
| B3M040120R |
|
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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Мінімальне замовлення: 800 шт
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| BGH40N120HF |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
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| BGH40N120HS1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 720.19 грн |
| 3+ | 603.56 грн |
| 10+ | 533.30 грн |
| 30+ | 479.13 грн |
| BGH75N120HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 814.08 грн |
| 3+ | 683.13 грн |
| BGH75N65HF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
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| BGH75N65ZF1 |
|
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1033.79 грн |
| 5+ | 860.90 грн |
| BTD21520EAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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| BTD21520EAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
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| BTD21520EBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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| BTD21520EBWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
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| BTD21520MAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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| BTD21520MAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
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| BTD21520MBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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| BTD21520MBWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
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| BTD21520SAPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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| BTD21520SAWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
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| BTD21520SBPR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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| BTD21520SBWR |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
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| BTL27524R |
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Operating temperature: -40...140°C
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Mounting: SMD
Supply voltage: 4.5...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Operating temperature: -40...140°C
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Kind of package: reel; tape
Case: SOP8
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Mounting: SMD
Supply voltage: 4.5...20V DC
на замовлення 2197 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 74.75 грн |
| 8+ | 60.10 грн |
| 25+ | 52.74 грн |
| 100+ | 47.24 грн |
| 250+ | 44.36 грн |
| 1000+ | 42.83 грн |
| BTP3843DR |
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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| BTP3844DR |
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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| BTP3845DR |
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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| BTP3845DSR |
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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