Продукція > BASIC SEMICONDUCTOR > Всі товари виробника BASIC SEMICONDUCTOR (102) > Сторінка 2 з 2

Обрати Сторінку:   [  << Попередня Сторінка ]  1 2
Фото Назва Виробник Інформація Доступність Ціна без ПДВ
B3D05120E BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: reel; tape
Power dissipation: 101W
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
9+55.09 грн
14+31.11 грн
100+23.65 грн
500+21.80 грн
1000+19.96 грн
2500+18.70 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
B3D05120K BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 115W; tube
Diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: tube
Power dissipation: 115W
товару немає в наявності
В кошику  од. на суму  грн.
B3D120040HC BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 400V; 60Ax2; TO247-3; 417W
Diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 0.3kA
Power dissipation: 417W
Kind of package: tube
Max. load current: 120A
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
B3D15120H BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; 273W
Diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 135A
Power dissipation: 273W
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065F BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape
Power dissipation: 187W
Case: TO263-3
Mounting: SMD
Kind of package: reel; tape
Diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065H BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube
Power dissipation: 268W
Case: TO247-2
Mounting: THT
Kind of package: tube
Diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065HC BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065K BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube
Power dissipation: 227W
Case: TO220-2
Mounting: THT
Kind of package: tube
Diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065TF BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube
Power dissipation: 65W
Case: TO3PF
Mounting: THT
Kind of package: tube
Diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
B3D20120F BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
товару немає в наявності
В кошику  од. на суму  грн.
B3D20120H BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
товару немає в наявності
В кошику  од. на суму  грн.
B3D20120HC BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
товару немає в наявності
В кошику  од. на суму  грн.
B3D50120H B3D50120H BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 750W
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
Power dissipation: 750W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Diode: Schottky rectifying
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
2+260.11 грн
10+217.21 грн
30+192.05 грн
120+172.76 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
B3D60120H2 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W
Power dissipation: 938W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Diode: Schottky rectifying
Max. forward impulse current: 540A
Load current: 60A
Max. off-state voltage: 1.2kV
Technology: SiC
товару немає в наявності
В кошику  од. на суму  грн.
B3DM060065N BASiC SEMICONDUCTOR B3DM060065N.pdf Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 60A x2
Max. load current: 360A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227
Max. forward impulse current: 420A
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 150 шт
В кошику  од. на суму  грн.
B3M040120H B3M040120H BASiC SEMICONDUCTOR B3M040120H.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 124A
Power dissipation: 312W
Gate charge: 85nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
на замовлення 171 шт:
термін постачання 14-30 дні (днів)
3+191.47 грн
10+160.18 грн
30+141.73 грн
120+127.47 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
B3M040120R BASiC SEMICONDUCTOR B3M040120R.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику  од. на суму  грн.
BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
1+713.50 грн
3+597.96 грн
10+528.35 грн
30+474.68 грн
В кошику  од. на суму  грн.
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
1+942.90 грн
5+792.52 грн
30+697.76 грн
В кошику  од. на суму  грн.
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
1+859.81 грн
5+717.88 грн
30+634.02 грн
В кошику  од. на суму  грн.
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
1+758.66 грн
5+634.02 грн
В кошику  од. на суму  грн.
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 568W
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247-3
Turn-off time: 443ns
Gate-emitter voltage: ±20V
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+817.36 грн
3+686.85 грн
В кошику  од. на суму  грн.
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
товару немає в наявності
В кошику  од. на суму  грн.
BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
1+1024.18 грн
5+852.91 грн
В кошику  од. на суму  грн.
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBWR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTL27524R BTL27524R BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...140°C
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...20V DC
на замовлення 2197 шт:
термін постачання 14-30 дні (днів)
7+60.05 грн
25+52.67 грн
100+47.22 грн
250+44.28 грн
1000+42.85 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
BTP3843DR BTP3843DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTP3844DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTP3845DR BTP3845DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTP3845DSR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
B3D05120E
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: reel; tape
Power dissipation: 101W
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+55.09 грн
14+31.11 грн
100+23.65 грн
500+21.80 грн
1000+19.96 грн
2500+18.70 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
B3D05120K
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 115W; tube
Diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 45A
Kind of package: tube
Power dissipation: 115W
товару немає в наявності
В кошику  од. на суму  грн.
B3D120040HC
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 400V; 60Ax2; TO247-3; 417W
Diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 60A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward impulse current: 0.3kA
Power dissipation: 417W
Kind of package: tube
Max. load current: 120A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
B3D15120H
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; 273W
Diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 135A
Power dissipation: 273W
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065F
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-3; SiC; SMD; 650V; 20A; reel,tape
Power dissipation: 187W
Case: TO263-3
Mounting: SMD
Kind of package: reel; tape
Diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065H
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; 268W; tube
Power dissipation: 268W
Case: TO247-2
Mounting: THT
Kind of package: tube
Diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065HC
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 150W
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Kind of package: tube
Diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 90A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065K
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; 227W; tube
Power dissipation: 227W
Case: TO220-2
Mounting: THT
Kind of package: tube
Diode: Schottky rectifying
Technology: SiC
Load current: 20A
Max. forward impulse current: 140A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
B3D20065TF
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; 65W; tube
Power dissipation: 65W
Case: TO3PF
Mounting: THT
Kind of package: tube
Diode: Schottky rectifying
Technology: SiC
Load current: 10A x2
Max. load current: 20A
Max. forward impulse current: 75A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику  од. на суму  грн.
B3D20120F
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
товару немає в наявності
В кошику  од. на суму  грн.
B3D20120H
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
товару немає в наявності
В кошику  од. на суму  грн.
B3D20120HC
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
товару немає в наявності
В кошику  од. на суму  грн.
B3D50120H
B3D50120H
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 750W
Mounting: THT
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
Power dissipation: 750W
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Diode: Schottky rectifying
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+260.11 грн
10+217.21 грн
30+192.05 грн
120+172.76 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
B3D60120H2
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; 938W
Power dissipation: 938W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Diode: Schottky rectifying
Max. forward impulse current: 540A
Load current: 60A
Max. off-state voltage: 1.2kV
Technology: SiC
товару немає в наявності
В кошику  од. на суму  грн.
B3DM060065N B3DM060065N.pdf
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 60A x2
Max. load current: 360A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227
Max. forward impulse current: 420A
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику  од. на суму  грн.
B3M040120H B3M040120H.pdf
B3M040120H
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 124A; 312W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.2kV
Transistor: N-MOSFET
Gate-source voltage: -4...18V
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 124A
Power dissipation: 312W
Gate charge: 85nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
на замовлення 171 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+191.47 грн
10+160.18 грн
30+141.73 грн
120+127.47 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
B3M040120R B3M040120R.pdf
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 108A; 300W
Transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 44A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BGH40N120HF
BGH40N120HF
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику  од. на суму  грн.
BGH40N120HS1
BGH40N120HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+713.50 грн
3+597.96 грн
10+528.35 грн
30+474.68 грн
В кошику  од. на суму  грн.
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+942.90 грн
5+792.52 грн
30+697.76 грн
В кошику  од. на суму  грн.
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 256ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+859.81 грн
5+717.88 грн
30+634.02 грн
В кошику  од. на суму  грн.
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 476ns
Technology: Field Stop; SiC SBD; Trench
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+758.66 грн
5+634.02 грн
В кошику  од. на суму  грн.
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 568W
Gate charge: 398nC
Technology: Field Stop; SiC SBD; Trench
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Transistor: IGBT
Turn-on time: 140ns
Kind of package: tube
Case: TO247-3
Turn-off time: 443ns
Gate-emitter voltage: ±20V
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+817.36 грн
3+686.85 грн
В кошику  од. на суму  грн.
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
товару немає в наявності
В кошику  од. на суму  грн.
BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1024.18 грн
5+852.91 грн
В кошику  од. на суму  грн.
BTD21520EAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520EBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520MBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SAWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
BTD21520SBWR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOW14; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Operating temperature: -40...125°C
Mounting: SMD
Output current: -6...4A
Number of channels: 2
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Kind of package: reel; tape
Type of integrated circuit: driver
Case: SOW14
Integrated circuit features: galvanically isolated
Kind of integrated circuit: gate driver
товару немає в наявності
В кошику  од. на суму  грн.
BTL27524R
BTL27524R
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Output current: -5...5A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...140°C
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
Supply voltage: 4.5...20V DC
на замовлення 2197 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+60.05 грн
25+52.67 грн
100+47.22 грн
250+44.28 грн
1000+42.85 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
BTP3843DR
BTP3843DR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTP3844DR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTP3845DR
BTP3845DR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
BTP3845DSR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 2