Продукція > BASIC SEMICONDUCTOR > Всі товари виробника BASIC SEMICONDUCTOR (133) > Сторінка 1 з 3
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B1D06065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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B1D06065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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B1D08065F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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B1D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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B1D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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B1D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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B1D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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B1D10065E | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.75V Leakage current: 20µA Max. forward impulse current: 75A Kind of package: reel; tape Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| B1D10065H | BASiC SEMICONDUCTOR | B1D10065H THT Schottky diodes |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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| B1D10065KS | BASiC SEMICONDUCTOR | B1D10065KS THT Schottky diodes |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Case: TO220-2 Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Kind of package: tube Semiconductor structure: single diode |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Case: TO220-2 Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Kind of package: tube Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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B1D16065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Max. load current: 16A Power dissipation: 73W |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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B1D16065HC | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Max. load current: 16A Power dissipation: 73W кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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| B1D20065HC | BASiC SEMICONDUCTOR | B1D20065HC THT Schottky diodes |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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| B1D30065TF | BASiC SEMICONDUCTOR | B1D30065TF THT Schottky diodes |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Power dissipation: 185W Kind of package: tube |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Power dissipation: 185W Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 14-21 дні (днів) |
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| B1M080120HC | BASiC SEMICONDUCTOR | B1M080120HC THT N channel transistors |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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| B1M080120HK | BASiC SEMICONDUCTOR | B1M080120HK THT N channel transistors |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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| B2D02120E1 | BASiC SEMICONDUCTOR | B2D02120E1 SMD Schottky diodes |
на замовлення 3339 шт: термін постачання 14-21 дні (днів) |
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| B2D02120K1 | BASiC SEMICONDUCTOR | B2D02120K1 THT Schottky diodes |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| B2D04065D | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 10µA Max. forward impulse current: 32A Kind of package: reel; tape Power dissipation: 26W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: SMD Load current: 4A Max. off-state voltage: 650V Case: TO252-2 |
на замовлення 2451 шт: термін постачання 21-30 дні (днів) |
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B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: SMD Load current: 4A Max. off-state voltage: 650V Case: TO252-2 кількість в упаковці: 1 шт |
на замовлення 2451 шт: термін постачання 14-21 дні (днів) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Leakage current: 20µA Max. forward voltage: 1.6V Load current: 4A Power dissipation: 39W Max. forward impulse current: 34A Max. off-state voltage: 650V Case: TO220-2 |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Leakage current: 20µA Max. forward voltage: 1.6V Load current: 4A Power dissipation: 39W Max. forward impulse current: 34A Max. off-state voltage: 650V Case: TO220-2 кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
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| B2D04065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| B2D04065V1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| B2D05120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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B2D05120K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
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B2D05120K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 121 шт: термін постачання 14-21 дні (днів) |
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape |
на замовлення 2445 шт: термін постачання 21-30 дні (днів) |
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO252-2 Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 2445 шт: термін постачання 14-21 дні (днів) |
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B2D06065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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B2D06065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 153 шт: термін постачання 14-21 дні (днів) |
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B2D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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B2D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 80 шт: термін постачання 14-21 дні (днів) |
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B2D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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B2D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 14-21 дні (днів) |
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B2D10065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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B2D10065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W кількість в упаковці: 1 шт |
на замовлення 222 шт: термін постачання 14-21 дні (днів) |
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B2D10065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| B2D10065KS | BASiC SEMICONDUCTOR | B2D10065KS THT Schottky diodes |
на замовлення 63 шт: термін постачання 14-21 дні (днів) |
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| B2D10065Q | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN8x8 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.67V Leakage current: 20µA Max. forward impulse current: 70A Kind of package: reel; tape Power dissipation: 54W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| B2D10120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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B2D10120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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B2D10120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
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B2D10120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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B2D10120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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B2D15120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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B2D15120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
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B2D16065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. load current: 16A |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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B2D16065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. load current: 16A кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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B2D16120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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B2D16120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W кількість в упаковці: 1 шт |
на замовлення 33 шт: термін постачання 14-21 дні (днів) |
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| B1D06065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.40 грн |
| 6+ | 75.24 грн |
| B1D06065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 108.49 грн |
| 5+ | 93.76 грн |
| 25+ | 79.83 грн |
| 100+ | 73.18 грн |
| B1D08065F |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
товару немає в наявності
В кошику
од. на суму грн.
| B1D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 426.44 грн |
| B1D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 307.03 грн |
| 5+ | 130.27 грн |
| 25+ | 111.19 грн |
| 100+ | 99.79 грн |
| 500+ | 97.89 грн |
| B1D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.81 грн |
| 5+ | 102.95 грн |
| B1D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.38 грн |
| 5+ | 128.30 грн |
| 25+ | 109.29 грн |
| 100+ | 98.84 грн |
| B1D10065E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Leakage current: 20µA
Max. forward impulse current: 75A
Kind of package: reel; tape
Power dissipation: 50W
товару немає в наявності
В кошику
од. на суму грн.
| B1D10065H |
Виробник: BASiC SEMICONDUCTOR
B1D10065H THT Schottky diodes
B1D10065H THT Schottky diodes
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.88 грн |
| 9+ | 136.85 грн |
| 23+ | 130.20 грн |
| B1D10065KS |
Виробник: BASiC SEMICONDUCTOR
B1D10065KS THT Schottky diodes
B1D10065KS THT Schottky diodes
на замовлення 31 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.01 грн |
| 9+ | 131.15 грн |
| 24+ | 124.50 грн |
| 500+ | 124.35 грн |
| B1D15065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: single diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 207.25 грн |
| 5+ | 172.65 грн |
| B1D15065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.70 грн |
| 5+ | 215.14 грн |
| 25+ | 188.17 грн |
| B1D16065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 73W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 73W
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 237.10 грн |
| B1D16065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 73W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 73W
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 284.52 грн |
| 5+ | 246.72 грн |
| 30+ | 210.03 грн |
| 150+ | 200.52 грн |
| B1D20065HC |
Виробник: BASiC SEMICONDUCTOR
B1D20065HC THT Schottky diodes
B1D20065HC THT Schottky diodes
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 395.05 грн |
| 4+ | 307.91 грн |
| 11+ | 290.81 грн |
| 600+ | 290.15 грн |
| B1D30065TF |
Виробник: BASiC SEMICONDUCTOR
B1D30065TF THT Schottky diodes
B1D30065TF THT Schottky diodes
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 509.68 грн |
| 3+ | 395.34 грн |
| 8+ | 373.49 грн |
| 600+ | 373.05 грн |
| B1D40065H |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Power dissipation: 185W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Power dissipation: 185W
Kind of package: tube
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 562.90 грн |
| 5+ | 470.42 грн |
| B1D40065H |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Power dissipation: 185W
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Power dissipation: 185W
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 11 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 675.48 грн |
| 5+ | 586.22 грн |
| 30+ | 498.93 грн |
| 150+ | 479.92 грн |
| B1M080120HC |
Виробник: BASiC SEMICONDUCTOR
B1M080120HC THT N channel transistors
B1M080120HC THT N channel transistors
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1299.12 грн |
| 3+ | 1228.80 грн |
| B1M080120HK |
Виробник: BASiC SEMICONDUCTOR
B1M080120HK THT N channel transistors
B1M080120HK THT N channel transistors
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1382.75 грн |
| 3+ | 1306.72 грн |
| 600+ | 1304.68 грн |
| B2D02120E1 |
Виробник: BASiC SEMICONDUCTOR
B2D02120E1 SMD Schottky diodes
B2D02120E1 SMD Schottky diodes
на замовлення 3339 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.06 грн |
| 19+ | 59.87 грн |
| 52+ | 56.07 грн |
| B2D02120K1 |
Виробник: BASiC SEMICONDUCTOR
B2D02120K1 THT Schottky diodes
B2D02120K1 THT Schottky diodes
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.88 грн |
| 22+ | 51.32 грн |
| 60+ | 48.47 грн |
| B2D04065D |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
товару немає в наявності
В кошику
од. на суму грн.
| B2D04065E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: SMD
Load current: 4A
Max. off-state voltage: 650V
Case: TO252-2
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: SMD
Load current: 4A
Max. off-state voltage: 650V
Case: TO252-2
на замовлення 2451 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.26 грн |
| 8+ | 51.48 грн |
| 25+ | 45.93 грн |
| 100+ | 41.18 грн |
| B2D04065E1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: SMD
Load current: 4A
Max. off-state voltage: 650V
Case: TO252-2
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: SMD
Load current: 4A
Max. off-state voltage: 650V
Case: TO252-2
кількість в упаковці: 1 шт
на замовлення 2451 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.15 грн |
| 25+ | 55.12 грн |
| 100+ | 49.42 грн |
| B2D04065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Power dissipation: 39W
Max. forward impulse current: 34A
Max. off-state voltage: 650V
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Power dissipation: 39W
Max. forward impulse current: 34A
Max. off-state voltage: 650V
Case: TO220-2
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.94 грн |
| 8+ | 55.44 грн |
| 25+ | 49.10 грн |
| B2D04065K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Power dissipation: 39W
Max. forward impulse current: 34A
Max. off-state voltage: 650V
Case: TO220-2
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 20µA
Max. forward voltage: 1.6V
Load current: 4A
Power dissipation: 39W
Max. forward impulse current: 34A
Max. off-state voltage: 650V
Case: TO220-2
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.92 грн |
| 5+ | 69.08 грн |
| 25+ | 58.92 грн |
| 100+ | 54.17 грн |
| 500+ | 52.27 грн |
| B2D04065KF1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| B2D04065V1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| B2D05120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| B2D05120K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
на замовлення 121 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 84.74 грн |
| 25+ | 78.40 грн |
| B2D05120K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 121 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.79 грн |
| 5+ | 105.60 грн |
| 25+ | 94.08 грн |
| B2D06065E1 |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
на замовлення 2445 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 69.69 грн |
| 25+ | 61.77 грн |
| 100+ | 59.40 грн |
| B2D06065E1 |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO252-2
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 2445 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.32 грн |
| 5+ | 86.85 грн |
| 25+ | 74.13 грн |
| 100+ | 71.28 грн |
| B2D06065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 83.16 грн |
| 10+ | 73.65 грн |
| 50+ | 66.52 грн |
| B2D06065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 103.62 грн |
| 10+ | 88.38 грн |
| 50+ | 79.83 грн |
| 250+ | 77.93 грн |
| B2D06065KF1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
на замовлення 153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.99 грн |
| 25+ | 75.24 грн |
| B2D06065KF1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 153 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.63 грн |
| 5+ | 99.68 грн |
| 25+ | 90.28 грн |
| B2D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.43 грн |
| B2D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.14 грн |
| 5+ | 119.41 грн |
| 25+ | 101.69 грн |
| 100+ | 95.03 грн |
| B2D08065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 108.31 грн |
| 5+ | 90.28 грн |
| 25+ | 79.99 грн |
| B2D08065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 80 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.98 грн |
| 5+ | 112.51 грн |
| 25+ | 95.98 грн |
| 100+ | 95.03 грн |
| B2D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.99 грн |
| 5+ | 96.62 грн |
| 25+ | 85.53 грн |
| B2D08065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.19 грн |
| 5+ | 120.40 грн |
| 25+ | 102.64 грн |
| 100+ | 95.03 грн |
| B2D10065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.81 грн |
| 5+ | 126.71 грн |
| 10+ | 96.62 грн |
| 27+ | 91.87 грн |
| B2D10065K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
на замовлення 222 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 182.17 грн |
| 5+ | 157.90 грн |
| 10+ | 115.94 грн |
| 27+ | 110.24 грн |
| B2D10065KF1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| B2D10065KS |
Виробник: BASiC SEMICONDUCTOR
B2D10065KS THT Schottky diodes
B2D10065KS THT Schottky diodes
на замовлення 63 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 219.02 грн |
| 9+ | 134.00 грн |
| 23+ | 127.35 грн |
| B2D10065Q |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.67V
Leakage current: 20µA
Max. forward impulse current: 70A
Kind of package: reel; tape
Power dissipation: 54W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.67V
Leakage current: 20µA
Max. forward impulse current: 70A
Kind of package: reel; tape
Power dissipation: 54W
товару немає в наявності
В кошику
од. на суму грн.
| B2D10120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| B2D10120H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.60 грн |
| 5+ | 186.90 грн |
| 7+ | 142.55 грн |
| 18+ | 134.63 грн |
| B2D10120H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 267.12 грн |
| 5+ | 232.91 грн |
| 7+ | 171.06 грн |
| 18+ | 161.56 грн |
| 600+ | 159.66 грн |
| B2D10120HC1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 210.66 грн |
| 5+ | 175.81 грн |
| 7+ | 137.80 грн |
| B2D10120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 252.79 грн |
| 5+ | 219.09 грн |
| 7+ | 165.36 грн |
| 19+ | 156.81 грн |
| 600+ | 151.10 грн |
| B2D15120H1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 404.26 грн |
| 3+ | 338.16 грн |
| 4+ | 285.90 грн |
| 9+ | 270.06 грн |
| B2D15120H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 485.11 грн |
| 3+ | 421.40 грн |
| 4+ | 343.07 грн |
| 9+ | 324.07 грн |
| 30+ | 321.22 грн |
| B2D16065HC1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. load current: 16A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. load current: 16A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 256.71 грн |
| 3+ | 213.83 грн |
| 10+ | 189.28 грн |
| 30+ | 186.11 грн |
| B2D16065HC1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. load current: 16A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. load current: 16A
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 308.06 грн |
| 3+ | 266.46 грн |
| 10+ | 227.13 грн |
| 30+ | 223.33 грн |
| B2D16120HC1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 321.53 грн |
| 5+ | 205.91 грн |
| 13+ | 194.82 грн |
| B2D16120HC1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 385.84 грн |
| 5+ | 256.59 грн |
| 13+ | 233.78 грн |
| 600+ | 229.98 грн |













