Продукція > BASIC SEMICONDUCTOR > Всі товари виробника BASIC SEMICONDUCTOR (201) > Сторінка 1 з 4
Фото | Назва | Виробник | Інформація |
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B1D03120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 39W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D03120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 39W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D05120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Max. forward impulse current: 60A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 53W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D05120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Max. forward impulse current: 60A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 53W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
B1D06065F | BASiC SEMICONDUCTOR | B1D06065F SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B1D06065KF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.73V Power dissipation: 23W Max. forward impulse current: 45A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D06065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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B1D06065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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B1D08065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D08065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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B1D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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B1D08065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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B1D08065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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B1D10065E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.75V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D10065E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.75V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 50W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
B1D10065F | BASiC SEMICONDUCTOR | B1D10065F SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B1D10065H | BASiC SEMICONDUCTOR | B1D10065H THT Schottky diodes |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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B1D10065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 38W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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B1D10065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 38W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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B1D10120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 62W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D10120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 62W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D15065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 112A Leakage current: 10µA Kind of package: tube Power dissipation: 84W |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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B1D15065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 112A Leakage current: 10µA Kind of package: tube Power dissipation: 84W кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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B1D16065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.75V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Power dissipation: 73W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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B1D16065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.75V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Power dissipation: 73W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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B1D20065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 650V Application: automotive industry Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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B1D20065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 650V Application: automotive industry Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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B1D30065TF | BASiC SEMICONDUCTOR | B1D30065TF THT Schottky diodes |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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B1D40065H | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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B1D40065H | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 14-21 дні (днів) |
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B1M080120HC | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 80mΩ Drain current: 27A Power dissipation: 241W Pulsed drain current: 80A Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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B1M080120HC | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 80mΩ Drain current: 27A Power dissipation: 241W Pulsed drain current: 80A Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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B1M080120HK | BASiC SEMICONDUCTOR | B1M080120HK THT N channel transistors |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W |
на замовлення 3339 шт: термін постачання 21-30 дні (днів) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W кількість в упаковці: 1 шт |
на замовлення 3339 шт: термін постачання 14-21 дні (днів) |
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B2D02120K1 | BASiC SEMICONDUCTOR | B2D02120K1 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065D | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 10µA Max. forward impulse current: 32A Kind of package: reel; tape Power dissipation: 26W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065D | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 10µA Max. forward impulse current: 32A Kind of package: reel; tape Power dissipation: 26W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065D1 | BASiC SEMICONDUCTOR | B2D04065D1 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D04065E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC |
на замовлення 2451 шт: термін постачання 21-30 дні (днів) |
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B2D04065E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC кількість в упаковці: 1 шт |
на замовлення 2451 шт: термін постачання 14-21 дні (днів) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
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B2D04065KF1 | BASiC SEMICONDUCTOR | B2D04065KF1 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065V | BASiC SEMICONDUCTOR | B2D04065V SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065V1 | BASiC SEMICONDUCTOR | B2D04065V1 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D05120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D05120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D05120K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 55A Leakage current: 30µA Kind of package: tube Power dissipation: 64W |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
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B2D05120K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 55A Leakage current: 30µA Kind of package: tube Power dissipation: 64W кількість в упаковці: 1 шт |
на замовлення 121 шт: термін постачання 14-21 дні (днів) |
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Load current: 6A Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 2448 шт: термін постачання 21-30 дні (днів) |
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Load current: 6A Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 2448 шт: термін постачання 14-21 дні (днів) |
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B2D06065K1 | BASiC SEMICONDUCTOR | B2D06065K1 THT Schottky diodes |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 153 шт: термін постачання 14-21 дні (днів) |
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B2D06065KS | BASiC SEMICONDUCTOR | B2D06065KS THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D06065Q | BASiC SEMICONDUCTOR | B2D06065Q SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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B2D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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B1D03120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 39W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 39W
товару немає в наявності
В кошику
од. на суму грн.
B1D03120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 39W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 39W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D05120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 53W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 53W
товару немає в наявності
В кошику
од. на суму грн.
B1D05120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 53W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 53W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D06065F |
Виробник: BASiC SEMICONDUCTOR
B1D06065F SMD Schottky diodes
B1D06065F SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B1D06065KF |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.73V
Power dissipation: 23W
Max. forward impulse current: 45A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.73V
Power dissipation: 23W
Max. forward impulse current: 45A
товару немає в наявності
В кошику
од. на суму грн.
B1D06065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 89.95 грн |
6+ | 74.85 грн |
B1D06065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 107.94 грн |
5+ | 93.28 грн |
15+ | 79.42 грн |
39+ | 74.70 грн |
100+ | 71.86 грн |
B1D08065F |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
товару немає в наявності
В кошику
од. на суму грн.
B1D08065F |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 424.27 грн |
B1D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 305.48 грн |
5+ | 144.34 грн |
11+ | 106.84 грн |
29+ | 101.17 грн |
B1D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 136.62 грн |
5+ | 114.25 грн |
11+ | 89.04 грн |
B1D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 163.94 грн |
5+ | 142.37 грн |
11+ | 106.84 грн |
29+ | 101.17 грн |
B1D10065E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 50W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 50W
товару немає в наявності
В кошику
од. на суму грн.
B1D10065E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 50W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 50W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D10065F |
Виробник: BASiC SEMICONDUCTOR
B1D10065F SMD Schottky diodes
B1D10065F SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B1D10065H |
Виробник: BASiC SEMICONDUCTOR
B1D10065H THT Schottky diodes
B1D10065H THT Schottky diodes
на замовлення 3 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 211.80 грн |
9+ | 135.21 грн |
23+ | 128.59 грн |
B1D10065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 145.10 грн |
5+ | 121.34 грн |
9+ | 108.74 грн |
24+ | 102.43 грн |
B1D10065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 174.12 грн |
5+ | 151.21 грн |
9+ | 130.48 грн |
24+ | 122.92 грн |
100+ | 118.19 грн |
B1D10120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 62W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 62W
товару немає в наявності
В кошику
од. на суму грн.
B1D10120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 62W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 62W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D15065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 230.80 грн |
5+ | 192.26 грн |
6+ | 170.98 грн |
B1D15065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 112A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 84W
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 276.97 грн |
5+ | 239.58 грн |
6+ | 205.18 грн |
15+ | 193.83 грн |
100+ | 185.32 грн |
B1D16065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Power dissipation: 73W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Power dissipation: 73W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 235.90 грн |
5+ | 196.98 грн |
6+ | 182.01 грн |
B1D16065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Power dissipation: 73W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Power dissipation: 73W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 283.08 грн |
5+ | 245.47 грн |
6+ | 218.42 грн |
14+ | 206.12 грн |
150+ | 198.56 грн |
B1D20065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 327.54 грн |
4+ | 253.72 грн |
11+ | 240.32 грн |
B1D20065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 393.05 грн |
4+ | 316.17 грн |
11+ | 288.38 грн |
150+ | 277.04 грн |
B1D30065TF |
Виробник: BASiC SEMICONDUCTOR
B1D30065TF THT Schottky diodes
B1D30065TF THT Schottky diodes
на замовлення 24 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 633.36 грн |
3+ | 406.58 грн |
8+ | 383.88 грн |
B1D40065H |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 560.04 грн |
3+ | 434.94 грн |
6+ | 411.30 грн |
B1D40065H |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 672.05 грн |
3+ | 542.00 грн |
6+ | 493.56 грн |
150+ | 474.65 грн |
B1M080120HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1154.02 грн |
3+ | 1013.29 грн |
B1M080120HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1384.83 грн |
3+ | 1262.71 грн |
150+ | 1203.65 грн |
600+ | 1168.67 грн |
B1M080120HK |
Виробник: BASiC SEMICONDUCTOR
B1M080120HK THT N channel transistors
B1M080120HK THT N channel transistors
на замовлення 13 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1364.39 грн |
3+ | 1289.69 грн |
600+ | 1288.24 грн |
B2D02120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
на замовлення 3339 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.28 грн |
7+ | 59.10 грн |
19+ | 49.64 грн |
52+ | 46.49 грн |
500+ | 45.70 грн |
B2D02120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
кількість в упаковці: 1 шт
на замовлення 3339 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 85.53 грн |
5+ | 73.64 грн |
19+ | 59.57 грн |
52+ | 55.79 грн |
500+ | 54.84 грн |
B2D02120K1 |
Виробник: BASiC SEMICONDUCTOR
B2D02120K1 THT Schottky diodes
B2D02120K1 THT Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065D |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
товару немає в наявності
В кошику
од. на суму грн.
B2D04065D |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B2D04065D1 |
Виробник: BASiC SEMICONDUCTOR
B2D04065D1 SMD Schottky diodes
B2D04065D1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
на замовлення 2451 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.94 грн |
8+ | 51.22 грн |
21+ | 44.12 грн |
58+ | 41.76 грн |
100+ | 40.97 грн |
B2D04065E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 2451 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 63.82 грн |
21+ | 52.95 грн |
58+ | 50.11 грн |
100+ | 49.17 грн |
B2D04065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.07 грн |
7+ | 61.46 грн |
20+ | 47.28 грн |
B2D04065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 93.68 грн |
5+ | 76.59 грн |
20+ | 56.73 грн |
54+ | 53.89 грн |
B2D04065KF1 |
Виробник: BASiC SEMICONDUCTOR
B2D04065KF1 THT Schottky diodes
B2D04065KF1 THT Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065V |
Виробник: BASiC SEMICONDUCTOR
B2D04065V SMD Schottky diodes
B2D04065V SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065V1 |
Виробник: BASiC SEMICONDUCTOR
B2D04065V1 SMD Schottky diodes
B2D04065V1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D05120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
B2D05120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B2D05120K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 55A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 64W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 55A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 64W
на замовлення 121 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 112.01 грн |
5+ | 93.76 грн |
11+ | 85.89 грн |
25+ | 82.73 грн |
30+ | 81.16 грн |
100+ | 78.01 грн |
B2D05120K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 55A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 64W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 55A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 64W
кількість в упаковці: 1 шт
на замовлення 121 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 134.41 грн |
5+ | 116.84 грн |
11+ | 103.06 грн |
25+ | 99.28 грн |
30+ | 97.39 грн |
100+ | 93.61 грн |
B2D06065E1 |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 2448 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 93.34 грн |
6+ | 78.01 грн |
15+ | 64.61 грн |
40+ | 60.67 грн |
500+ | 59.10 грн |
B2D06065E1 |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 2448 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.01 грн |
5+ | 97.21 грн |
15+ | 77.53 грн |
40+ | 72.81 грн |
500+ | 70.91 грн |
B2D06065K1 |
Виробник: BASiC SEMICONDUCTOR
B2D06065K1 THT Schottky diodes
B2D06065K1 THT Schottky diodes
на замовлення 100 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 155.79 грн |
12+ | 93.61 грн |
33+ | 87.93 грн |
B2D06065KF1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
на замовлення 153 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 106.92 грн |
5+ | 89.04 грн |
12+ | 81.95 грн |
25+ | 78.79 грн |
32+ | 77.22 грн |
100+ | 74.85 грн |
B2D06065KF1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 153 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 128.30 грн |
5+ | 110.95 грн |
12+ | 98.33 грн |
25+ | 94.55 грн |
32+ | 92.66 грн |
100+ | 89.82 грн |
B2D06065KS |
Виробник: BASiC SEMICONDUCTOR
B2D06065KS THT Schottky diodes
B2D06065KS THT Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D06065Q |
Виробник: BASiC SEMICONDUCTOR
B2D06065Q SMD Schottky diodes
B2D06065Q SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 141.71 грн |
B2D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 136.45 грн |
5+ | 118.81 грн |
11+ | 103.06 грн |
25+ | 101.17 грн |
30+ | 97.39 грн |
100+ | 92.66 грн |