Продукція > BASIC SEMICONDUCTOR > Всі товари виробника BASIC SEMICONDUCTOR (115) > Сторінка 1 з 2
Обрати Сторінку:
1
2
[ Наступна Сторінка >> ]
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
B1D06065KF | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.73V Power dissipation: 23W Max. forward impulse current: 45A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
B1D06065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B1D06065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.75V Max. forward impulse current: 45A Leakage current: 20µA Kind of package: tube Power dissipation: 30W кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B1D08065F | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
B1D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B1D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B1D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B1D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
| B1D10065H | BASiC SEMICONDUCTOR | B1D10065H THT Schottky diodes |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
| B1D10065KS | BASiC SEMICONDUCTOR | B1D10065KS THT Schottky diodes |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
|
B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Case: TO220-2 Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Kind of package: tube Semiconductor structure: single diode |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B1D15065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Case: TO220-2 Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Kind of package: tube Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
| B1D16065HC | BASiC SEMICONDUCTOR | B1D16065HC THT Schottky diodes |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
| B1D20065HC | BASiC SEMICONDUCTOR | B1D20065HC THT Schottky diodes |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
| B1D30065TF | BASiC SEMICONDUCTOR | B1D30065TF THT Schottky diodes |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
|
B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B1D40065H | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.62V Max. forward impulse current: 310A Leakage current: 20µA Kind of package: tube Power dissipation: 185W кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
| B1M080120HC | BASiC SEMICONDUCTOR | B1M080120HC THT N channel transistors |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
| B1M080120HK | BASiC SEMICONDUCTOR | B1M080120HK THT N channel transistors |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
|
B2D02120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W |
на замовлення 3339 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D02120E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.92V Leakage current: 20µA Max. forward impulse current: 22A Kind of package: reel; tape Technology: SiC Power dissipation: 34W кількість в упаковці: 1 шт |
на замовлення 3339 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
| B2D02120K1 | BASiC SEMICONDUCTOR | B2D02120K1 THT Schottky diodes |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
| B2D04065D | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.7V Leakage current: 10µA Max. forward impulse current: 32A Kind of package: reel; tape Power dissipation: 26W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC |
на замовлення 2451 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D04065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC кількість в упаковці: 1 шт |
на замовлення 2451 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D04065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.6V Max. forward impulse current: 34A Leakage current: 20µA Kind of package: tube Power dissipation: 39W кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D05120K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D05120K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV кількість в упаковці: 1 шт |
на замовлення 121 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
| B2D06065E1 | BASiC SEMICONDUCTOR | B2D06065E1 SMD Schottky diodes |
на замовлення 2445 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
| B2D06065K1 | BASiC SEMICONDUCTOR | B2D06065K1 THT Schottky diodes |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
|
B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 153 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D08065K | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 80 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D08065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.54V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 37W кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D10065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D10065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 85A Leakage current: 20µA Kind of package: tube Power dissipation: 62W кількість в упаковці: 1 шт |
на замовлення 222 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D10065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Mounting: THT Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC Case: TO220ISO Leakage current: 10µA Max. forward impulse current: 85A Max. forward voltage: 1.7V Load current: 10A Power dissipation: 47W Max. off-state voltage: 650V Kind of package: tube |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D10065KS | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA Mounting: THT Semiconductor structure: single diode Type of diode: Schottky rectifying Technology: SiC Case: TO220ISO Leakage current: 10µA Max. forward impulse current: 85A Max. forward voltage: 1.7V Load current: 10A Power dissipation: 47W Max. off-state voltage: 650V Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 63 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D10120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D10120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 90A Leakage current: 30µA Kind of package: tube Power dissipation: 62W кількість в упаковці: 1 шт |
на замовлення 39 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D10120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D10120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 55A Leakage current: 20µA Kind of package: tube Max. load current: 10A Power dissipation: 64W кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D15120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D15120H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 22 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
| B2D16065HC1 | BASiC SEMICONDUCTOR | B2D16065HC1 THT Schottky diodes |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||
|
B2D16120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D16120HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.82V Max. forward impulse current: 80A Leakage current: 30µA Kind of package: tube Max. load current: 16A Power dissipation: 74W кількість в упаковці: 1 шт |
на замовлення 33 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D20065F1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode |
на замовлення 520 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D20065F1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 520 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D20065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Kind of package: tube Power dissipation: 130W |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D20065H1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.7V Max. forward impulse current: 146A Leakage current: 15µA Kind of package: tube Power dissipation: 130W кількість в упаковці: 1 шт |
на замовлення 29 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D20065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.75V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
B2D20065HC1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 30µA Max. forward voltage: 1.75V Load current: 10A x2 Max. load current: 20A Power dissipation: 74W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 14-21 дні (днів) |
|
||||||||||||
|
B2D20065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220-2 Load current: 20A Max. off-state voltage: 650V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
B2D20065TF | BASiC SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO3PF Leakage current: 20µA Max. forward voltage: 1.62V Load current: 10A x2 Max. load current: 20A Power dissipation: 33W Max. forward impulse current: 70A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
|
| B1D06065KF |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.73V
Power dissipation: 23W
Max. forward impulse current: 45A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.73V
Power dissipation: 23W
Max. forward impulse current: 45A
товару немає в наявності
В кошику
од. на суму грн.
| B1D06065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.76 грн |
| 6+ | 74.70 грн |
| B1D06065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.75V
Max. forward impulse current: 45A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 30W
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.72 грн |
| 5+ | 93.09 грн |
| 15+ | 79.26 грн |
| 39+ | 74.55 грн |
| 100+ | 71.72 грн |
| B1D08065F |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
товару немає в наявності
В кошику
од. на суму грн.
| B1D08065K |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 423.42 грн |
| B1D08065K |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 304.86 грн |
| 5+ | 129.35 грн |
| 25+ | 110.40 грн |
| 100+ | 99.08 грн |
| 500+ | 97.19 грн |
| B1D08065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 121.94 грн |
| 5+ | 102.23 грн |
| B1D08065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.33 грн |
| 5+ | 127.39 грн |
| 25+ | 108.52 грн |
| 100+ | 98.14 грн |
| 500+ | 97.19 грн |
| B1D10065H |
Виробник: BASiC SEMICONDUCTOR
B1D10065H THT Schottky diodes
B1D10065H THT Schottky diodes
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.37 грн |
| 9+ | 135.88 грн |
| 23+ | 129.28 грн |
| B1D10065KS |
Виробник: BASiC SEMICONDUCTOR
B1D10065KS THT Schottky diodes
B1D10065KS THT Schottky diodes
на замовлення 31 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.77 грн |
| 9+ | 130.22 грн |
| 24+ | 123.61 грн |
| 500+ | 123.47 грн |
| B1D15065K |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: single diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 205.78 грн |
| 5+ | 171.42 грн |
| B1D15065K |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Case: TO220-2
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.94 грн |
| 5+ | 213.62 грн |
| 25+ | 184.95 грн |
| B1D16065HC |
Виробник: BASiC SEMICONDUCTOR
B1D16065HC THT Schottky diodes
B1D16065HC THT Schottky diodes
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.51 грн |
| 6+ | 218.92 грн |
| 14+ | 206.65 грн |
| B1D20065HC |
Виробник: BASiC SEMICONDUCTOR
B1D20065HC THT Schottky diodes
B1D20065HC THT Schottky diodes
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 392.26 грн |
| 4+ | 305.73 грн |
| 11+ | 288.75 грн |
| 600+ | 288.09 грн |
| B1D30065TF |
Виробник: BASiC SEMICONDUCTOR
B1D30065TF THT Schottky diodes
B1D30065TF THT Schottky diodes
на замовлення 24 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 506.07 грн |
| 3+ | 392.55 грн |
| 8+ | 370.84 грн |
| 600+ | 370.41 грн |
| B1D40065H |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 558.91 грн |
| 3+ | 434.07 грн |
| 6+ | 410.48 грн |
| B1D40065H |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.62V
Max. forward impulse current: 310A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 185W
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 670.70 грн |
| 3+ | 540.91 грн |
| 6+ | 492.57 грн |
| 150+ | 473.70 грн |
| B1M080120HC |
Виробник: BASiC SEMICONDUCTOR
B1M080120HC THT N channel transistors
B1M080120HC THT N channel transistors
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1289.93 грн |
| 3+ | 1220.10 грн |
| B1M080120HK |
Виробник: BASiC SEMICONDUCTOR
B1M080120HK THT N channel transistors
B1M080120HK THT N channel transistors
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1372.97 грн |
| 3+ | 1297.48 грн |
| 600+ | 1295.45 грн |
| B2D02120E1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
на замовлення 3339 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.13 грн |
| 7+ | 58.98 грн |
| 19+ | 49.54 грн |
| 52+ | 46.39 грн |
| 500+ | 45.61 грн |
| B2D02120E1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.92V
Leakage current: 20µA
Max. forward impulse current: 22A
Kind of package: reel; tape
Technology: SiC
Power dissipation: 34W
кількість в упаковці: 1 шт
на замовлення 3339 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.36 грн |
| 5+ | 73.49 грн |
| 19+ | 59.45 грн |
| 52+ | 55.67 грн |
| 500+ | 54.73 грн |
| B2D02120K1 |
Виробник: BASiC SEMICONDUCTOR
B2D02120K1 THT Schottky diodes
B2D02120K1 THT Schottky diodes
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 81.30 грн |
| 22+ | 50.96 грн |
| 60+ | 48.12 грн |
| B2D04065D |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Leakage current: 10µA
Max. forward impulse current: 32A
Kind of package: reel; tape
Power dissipation: 26W
товару немає в наявності
В кошику
од. на суму грн.
| B2D04065E1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
на замовлення 2451 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.82 грн |
| 8+ | 51.11 грн |
| 21+ | 44.04 грн |
| 58+ | 41.68 грн |
| 100+ | 40.89 грн |
| B2D04065E1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 2451 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.69 грн |
| 21+ | 52.84 грн |
| 58+ | 50.01 грн |
| 100+ | 49.07 грн |
| B2D04065K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.91 грн |
| 7+ | 61.34 грн |
| 20+ | 47.18 грн |
| B2D04065K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 93.49 грн |
| 5+ | 76.43 грн |
| 20+ | 56.62 грн |
| 54+ | 53.79 грн |
| B2D05120K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
на замовлення 121 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 84.14 грн |
| 25+ | 77.85 грн |
| B2D05120K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
на замовлення 121 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.93 грн |
| 5+ | 104.85 грн |
| 25+ | 93.42 грн |
| B2D06065E1 |
Виробник: BASiC SEMICONDUCTOR
B2D06065E1 SMD Schottky diodes
B2D06065E1 SMD Schottky diodes
на замовлення 2445 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.88 грн |
| 15+ | 77.38 грн |
| 40+ | 73.60 грн |
| B2D06065K1 |
Виробник: BASiC SEMICONDUCTOR
B2D06065K1 THT Schottky diodes
B2D06065K1 THT Schottky diodes
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.22 грн |
| 14+ | 83.98 грн |
| 37+ | 80.21 грн |
| B2D06065KF1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
на замовлення 153 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.70 грн |
| 5+ | 88.86 грн |
| 12+ | 81.78 грн |
| 25+ | 78.64 грн |
| 32+ | 77.06 грн |
| 100+ | 74.70 грн |
| B2D06065KF1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 153 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.04 грн |
| 5+ | 110.73 грн |
| 12+ | 98.14 грн |
| 25+ | 94.36 грн |
| 32+ | 92.47 грн |
| 100+ | 89.64 грн |
| B2D08065K |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.42 грн |
| B2D08065K |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
кількість в упаковці: 1 шт
на замовлення 3 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.17 грн |
| 5+ | 118.57 грн |
| 25+ | 100.97 грн |
| 100+ | 92.47 грн |
| B2D08065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.55 грн |
| 5+ | 89.64 грн |
| 25+ | 79.42 грн |
| B2D08065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 80 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.06 грн |
| 5+ | 111.71 грн |
| 25+ | 95.31 грн |
| 100+ | 93.42 грн |
| B2D08065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.17 грн |
| 5+ | 95.93 грн |
| 25+ | 84.93 грн |
| B2D08065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.20 грн |
| 5+ | 119.55 грн |
| 25+ | 101.91 грн |
| 100+ | 92.47 грн |
| B2D10065K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.74 грн |
| 5+ | 125.82 грн |
| 10+ | 95.93 грн |
| 27+ | 91.22 грн |
| B2D10065K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
на замовлення 222 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 180.88 грн |
| 5+ | 156.79 грн |
| 10+ | 115.12 грн |
| 27+ | 109.46 грн |
| B2D10065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 171.91 грн |
| 5+ | 143.90 грн |
| 9+ | 110.09 грн |
| 23+ | 104.58 грн |
| B2D10065KS |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220ISO
Leakage current: 10µA
Max. forward impulse current: 85A
Max. forward voltage: 1.7V
Load current: 10A
Power dissipation: 47W
Max. off-state voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 63 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.29 грн |
| 5+ | 179.32 грн |
| 9+ | 132.11 грн |
| 23+ | 125.50 грн |
| B2D10120H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 221.02 грн |
| 5+ | 185.58 грн |
| 7+ | 141.54 грн |
| 18+ | 133.68 грн |
| B2D10120H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Kind of package: tube
Power dissipation: 62W
кількість в упаковці: 1 шт
на замовлення 39 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.23 грн |
| 5+ | 231.26 грн |
| 7+ | 169.85 грн |
| 18+ | 160.42 грн |
| 600+ | 158.53 грн |
| B2D10120HC1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 209.17 грн |
| 5+ | 174.57 грн |
| 7+ | 136.82 грн |
| B2D10120HC1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 55A
Leakage current: 20µA
Kind of package: tube
Max. load current: 10A
Power dissipation: 64W
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.00 грн |
| 5+ | 217.54 грн |
| 7+ | 164.19 грн |
| 19+ | 155.70 грн |
| 600+ | 150.04 грн |
| B2D15120H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
на замовлення 22 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 401.40 грн |
| 3+ | 335.77 грн |
| 4+ | 283.87 грн |
| 9+ | 268.15 грн |
| B2D15120H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO247-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 22 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 481.68 грн |
| 3+ | 418.42 грн |
| 4+ | 340.65 грн |
| 9+ | 321.77 грн |
| 30+ | 318.94 грн |
| B2D16065HC1 |
Виробник: BASiC SEMICONDUCTOR
B2D16065HC1 THT Schottky diodes
B2D16065HC1 THT Schottky diodes
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 358.72 грн |
| 5+ | 243.45 грн |
| 13+ | 230.24 грн |
| B2D16120HC1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 319.26 грн |
| 5+ | 204.45 грн |
| 13+ | 193.44 грн |
| B2D16120HC1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; Ir: 30uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.82V
Max. forward impulse current: 80A
Leakage current: 30µA
Kind of package: tube
Max. load current: 16A
Power dissipation: 74W
кількість в упаковці: 1 шт
на замовлення 33 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 383.11 грн |
| 5+ | 254.78 грн |
| 13+ | 232.13 грн |
| 600+ | 228.36 грн |
| B2D20065F1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
на замовлення 520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 261.67 грн |
| 5+ | 217.82 грн |
| 12+ | 206.02 грн |
| 25+ | 197.37 грн |
| B2D20065F1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 314.01 грн |
| 5+ | 271.44 грн |
| 12+ | 247.23 грн |
| 25+ | 236.85 грн |
| B2D20065H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 332.81 грн |
| 3+ | 277.58 грн |
| 5+ | 213.10 грн |
| 12+ | 201.31 грн |
| B2D20065H1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.7V
Max. forward impulse current: 146A
Leakage current: 15µA
Kind of package: tube
Power dissipation: 130W
кількість в упаковці: 1 шт
на замовлення 29 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 399.37 грн |
| 3+ | 345.91 грн |
| 5+ | 255.72 грн |
| 12+ | 241.57 грн |
| B2D20065HC1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 332.81 грн |
| 5+ | 223.32 грн |
| 12+ | 211.53 грн |
| B2D20065HC1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 74W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
кількість в упаковці: 1 шт
на замовлення 25 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 399.37 грн |
| 5+ | 278.30 грн |
| 12+ | 253.83 грн |
| 150+ | 247.23 грн |
| 600+ | 244.40 грн |
| B2D20065K1 |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Load current: 20A
Max. off-state voltage: 650V
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| B2D20065TF |
![]() |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO3PF
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 10A x2
Max. load current: 20A
Power dissipation: 33W
Max. forward impulse current: 70A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.50 грн |
| 5+ | 198.16 грн |
| 30+ | 196.59 грн |
Обрати Сторінку:
1
2
[ Наступна Сторінка >> ]














