Продукція > BASIC SEMICONDUCTOR > Всі товари виробника BASIC SEMICONDUCTOR (197) > Сторінка 1 з 4
Фото | Назва | Виробник | Інформація |
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B1D03120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 39W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D03120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 39W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D05120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Max. forward impulse current: 60A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 53W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D05120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 1.78V Max. forward impulse current: 60A Kind of package: reel; tape Leakage current: 10µA Power dissipation: 53W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
B1D06065F | BASiC SEMICONDUCTOR | B1D06065F SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B1D06065KF | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.73V Power dissipation: 23W Max. forward impulse current: 45A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D06065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 6A Max. forward impulse current: 45A Power dissipation: 30W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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B1D06065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 6A Max. forward impulse current: 45A Power dissipation: 30W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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B1D08065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D08065F | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO263-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: reel; tape Power dissipation: 48W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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B1D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 56W кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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B1D08065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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B1D08065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 1.73V Max. forward impulse current: 64A Leakage current: 10µA Kind of package: tube Power dissipation: 32W кількість в упаковці: 1 шт |
на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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B1D10065E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.75V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D10065E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.75V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 50W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
B1D10065F | BASiC SEMICONDUCTOR | B1D10065F SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B1D10065H | BASiC SEMICONDUCTOR | B1D10065H THT Schottky diodes |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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B1D10065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 38W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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B1D10065KS | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA Case: TO220ISO Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.75V Load current: 10A Max. forward impulse current: 75A Power dissipation: 38W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 31 шт: термін постачання 14-21 дні (днів) |
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B1D10120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 62W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D10120E | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 20µA Power dissipation: 62W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B1D15065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Case: TO220-2 Kind of package: tube Semiconductor structure: single diode |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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B1D15065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Mounting: THT Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Load current: 15A Power dissipation: 84W Max. forward impulse current: 112A Max. forward voltage: 1.75V Max. off-state voltage: 650V Case: TO220-2 Kind of package: tube Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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B1D16065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.75V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Power dissipation: 73W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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B1D16065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA Case: TO247-3 Mounting: THT Kind of package: tube Leakage current: 10µA Max. forward voltage: 1.75V Load current: 8A x2 Max. load current: 16A Max. forward impulse current: 60A Power dissipation: 73W Max. off-state voltage: 650V Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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B1D20065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 650V Application: automotive industry Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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B1D20065HC | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Case: TO247-3 Mounting: THT Kind of package: tube Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 650V Application: automotive industry Semiconductor structure: common cathode; double Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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B1D30065TF | BASiC SEMICONDUCTOR | B1D30065TF THT Schottky diodes |
на замовлення 24 шт: термін постачання 14-21 дні (днів) |
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B1D40065H | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.62V Load current: 40A Max. forward impulse current: 310A Power dissipation: 185W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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B1D40065H | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA Case: TO247-2 Mounting: THT Kind of package: tube Leakage current: 20µA Max. forward voltage: 1.62V Load current: 40A Max. forward impulse current: 310A Power dissipation: 185W Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 14-21 дні (днів) |
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B1M080120HC | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 80mΩ Drain current: 27A Power dissipation: 241W Pulsed drain current: 80A Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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B1M080120HC | BASiC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 80mΩ Drain current: 27A Power dissipation: 241W Pulsed drain current: 80A Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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B1M080120HK | BASiC SEMICONDUCTOR | B1M080120HK THT N channel transistors |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Leakage current: 20µA Max. forward voltage: 1.92V Load current: 2A Max. forward impulse current: 22A Power dissipation: 34W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 3358 шт: термін постачання 21-30 дні (днів) |
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B2D02120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Leakage current: 20µA Max. forward voltage: 1.92V Load current: 2A Max. forward impulse current: 22A Power dissipation: 34W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 3358 шт: термін постачання 14-21 дні (днів) |
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B2D02120K1 | BASiC SEMICONDUCTOR | B2D02120K1 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065D | BASiC SEMICONDUCTOR | B2D04065D SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065D1 | BASiC SEMICONDUCTOR | B2D04065D1 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D04065E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC |
на замовлення 2453 шт: термін постачання 21-30 дні (днів) |
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B2D04065E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC кількість в упаковці: 1 шт |
на замовлення 2453 шт: термін постачання 14-21 дні (днів) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 20µA Power dissipation: 39W Max. forward voltage: 1.6V Load current: 4A Max. forward impulse current: 34A Max. off-state voltage: 650V Kind of package: tube |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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B2D04065K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V Case: TO220-2 Mounting: THT Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 20µA Power dissipation: 39W Max. forward voltage: 1.6V Load current: 4A Max. forward impulse current: 34A Max. off-state voltage: 650V Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
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B2D04065KF1 | BASiC SEMICONDUCTOR | B2D04065KF1 THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065V | BASiC SEMICONDUCTOR | B2D04065V SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D04065V1 | BASiC SEMICONDUCTOR | B2D04065V1 SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D05120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D05120E1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape Type of diode: Schottky rectifying Case: TO252-2 Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D05120K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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B2D05120K1 | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA Case: TO220-2 Mounting: THT Kind of package: tube Leakage current: 30µA Max. forward voltage: 1.75V Load current: 5A Max. forward impulse current: 55A Power dissipation: 64W Max. off-state voltage: 1.2kV Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 132 шт: термін постачання 14-21 дні (днів) |
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Load current: 6A Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying |
на замовлення 2448 шт: термін постачання 21-30 дні (днів) |
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B2D06065E1 | BASiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Case: TO252-2 Mounting: SMD Kind of package: reel; tape Load current: 6A Max. off-state voltage: 650V Semiconductor structure: single diode Technology: SiC Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 2448 шт: термін постачання 14-21 дні (днів) |
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B2D06065K1 | BASiC SEMICONDUCTOR | B2D06065K1 THT Schottky diodes |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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B2D06065KF1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 153 шт: термін постачання 14-21 дні (днів) |
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B2D06065KS | BASiC SEMICONDUCTOR | B2D06065KS THT Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
B2D06065Q | BASiC SEMICONDUCTOR | B2D06065Q SMD Schottky diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B2D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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B2D08065K | BASiC SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 60A Leakage current: 10µA Kind of package: tube Power dissipation: 57W кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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B2D08065K1 | BASiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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B1D03120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 39W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 39W
товару немає в наявності
В кошику
од. на суму грн.
B1D03120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 39W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 3A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 39W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D05120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 53W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 53W
товару немає в наявності
В кошику
од. на суму грн.
B1D05120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 53W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.78V
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 10µA
Power dissipation: 53W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D06065F |
Виробник: BASiC SEMICONDUCTOR
B1D06065F SMD Schottky diodes
B1D06065F SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B1D06065KF |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.73V
Power dissipation: 23W
Max. forward impulse current: 45A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 20uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.73V
Power dissipation: 23W
Max. forward impulse current: 45A
товару немає в наявності
В кошику
од. на суму грн.
B1D06065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Max. forward impulse current: 45A
Power dissipation: 30W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Max. forward impulse current: 45A
Power dissipation: 30W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.13 грн |
6+ | 74.22 грн |
B1D06065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Max. forward impulse current: 45A
Power dissipation: 30W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 6A
Max. forward impulse current: 45A
Power dissipation: 30W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 108.16 грн |
5+ | 92.49 грн |
15+ | 79.59 грн |
25+ | 78.64 грн |
39+ | 74.85 грн |
100+ | 72.01 грн |
B1D08065F |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
товару немає в наявності
В кошику
од. на суму грн.
B1D08065F |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 425.15 грн |
B1D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 306.11 грн |
5+ | 144.64 грн |
11+ | 107.06 грн |
29+ | 101.38 грн |
B1D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 136.90 грн |
5+ | 114.49 грн |
11+ | 89.22 грн |
B1D08065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
кількість в упаковці: 1 шт
на замовлення 19 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 164.28 грн |
5+ | 142.67 грн |
11+ | 107.06 грн |
29+ | 101.38 грн |
B1D10065E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 50W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 50W
товару немає в наявності
В кошику
од. на суму грн.
B1D10065E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 50W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.75V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 50W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D10065F |
Виробник: BASiC SEMICONDUCTOR
B1D10065F SMD Schottky diodes
B1D10065F SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B1D10065H |
Виробник: BASiC SEMICONDUCTOR
B1D10065H THT Schottky diodes
B1D10065H THT Schottky diodes
на замовлення 3 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 212.23 грн |
9+ | 135.49 грн |
23+ | 128.86 грн |
B1D10065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 145.40 грн |
5+ | 121.59 грн |
9+ | 108.96 грн |
24+ | 102.64 грн |
B1D10065KS |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 20uA
Case: TO220ISO
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.75V
Load current: 10A
Max. forward impulse current: 75A
Power dissipation: 38W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 31 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 174.48 грн |
5+ | 151.52 грн |
9+ | 130.75 грн |
24+ | 123.17 грн |
100+ | 118.43 грн |
B1D10120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 62W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 62W
товару немає в наявності
В кошику
од. на суму грн.
B1D10120E |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 62W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 62W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 20µA
Power dissipation: 62W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B1D15065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Case: TO220-2
Kind of package: tube
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Case: TO220-2
Kind of package: tube
Semiconductor structure: single diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 231.28 грн |
5+ | 192.65 грн |
6+ | 171.33 грн |
B1D15065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Case: TO220-2
Kind of package: tube
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. forward voltage: 1.75V
Max. off-state voltage: 650V
Case: TO220-2
Kind of package: tube
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 277.54 грн |
5+ | 240.07 грн |
6+ | 205.60 грн |
15+ | 194.23 грн |
100+ | 187.60 грн |
B1D16065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Power dissipation: 73W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Power dissipation: 73W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 236.38 грн |
5+ | 197.39 грн |
6+ | 182.39 грн |
B1D16065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Power dissipation: 73W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Power dissipation: 73W
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 283.66 грн |
5+ | 245.98 грн |
6+ | 218.87 грн |
14+ | 206.55 грн |
150+ | 198.97 грн |
B1D20065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 328.21 грн |
4+ | 254.24 грн |
11+ | 240.82 грн |
B1D20065HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 24 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 393.86 грн |
4+ | 316.82 грн |
11+ | 288.98 грн |
150+ | 277.61 грн |
B1D30065TF |
Виробник: BASiC SEMICONDUCTOR
B1D30065TF THT Schottky diodes
B1D30065TF THT Schottky diodes
на замовлення 24 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 634.66 грн |
3+ | 407.41 грн |
8+ | 384.67 грн |
B1D40065H |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 40A
Max. forward impulse current: 310A
Power dissipation: 185W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 40A
Max. forward impulse current: 310A
Power dissipation: 185W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 561.19 грн |
3+ | 435.05 грн |
6+ | 411.36 грн |
B1D40065H |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 40A
Max. forward impulse current: 310A
Power dissipation: 185W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-2; Ir: 20uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Leakage current: 20µA
Max. forward voltage: 1.62V
Load current: 40A
Max. forward impulse current: 310A
Power dissipation: 185W
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 673.43 грн |
3+ | 542.14 грн |
6+ | 493.63 грн |
150+ | 475.63 грн |
B1M080120HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
на замовлення 40 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1156.40 грн |
3+ | 1015.37 грн |
B1M080120HC |
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Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 80mΩ
Drain current: 27A
Power dissipation: 241W
Pulsed drain current: 80A
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 149nC
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1387.68 грн |
3+ | 1265.31 грн |
150+ | 1206.13 грн |
600+ | 1171.07 грн |
B1M080120HK |
Виробник: BASiC SEMICONDUCTOR
B1M080120HK THT N channel transistors
B1M080120HK THT N channel transistors
на замовлення 13 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1367.20 грн |
3+ | 1292.35 грн |
600+ | 1290.89 грн |
B2D02120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20µA
Max. forward voltage: 1.92V
Load current: 2A
Max. forward impulse current: 22A
Power dissipation: 34W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20µA
Max. forward voltage: 1.92V
Load current: 2A
Max. forward impulse current: 22A
Power dissipation: 34W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 3358 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.42 грн |
7+ | 60.01 грн |
19+ | 49.74 грн |
52+ | 46.58 грн |
500+ | 45.79 грн |
B2D02120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20µA
Max. forward voltage: 1.92V
Load current: 2A
Max. forward impulse current: 22A
Power dissipation: 34W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 2A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Leakage current: 20µA
Max. forward voltage: 1.92V
Load current: 2A
Max. forward impulse current: 22A
Power dissipation: 34W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 3358 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 85.71 грн |
5+ | 74.78 грн |
19+ | 59.69 грн |
52+ | 55.90 грн |
500+ | 54.95 грн |
B2D02120K1 |
Виробник: BASiC SEMICONDUCTOR
B2D02120K1 THT Schottky diodes
B2D02120K1 THT Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065D |
Виробник: BASiC SEMICONDUCTOR
B2D04065D SMD Schottky diodes
B2D04065D SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065D1 |
Виробник: BASiC SEMICONDUCTOR
B2D04065D1 SMD Schottky diodes
B2D04065D1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
на замовлення 2453 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.22 грн |
8+ | 51.32 грн |
21+ | 44.22 грн |
58+ | 41.85 грн |
100+ | 40.27 грн |
B2D04065E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 2453 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 63.95 грн |
21+ | 53.06 грн |
58+ | 50.22 грн |
100+ | 48.32 грн |
B2D04065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 20µA
Power dissipation: 39W
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 34A
Max. off-state voltage: 650V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 20µA
Power dissipation: 39W
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 34A
Max. off-state voltage: 650V
Kind of package: tube
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.23 грн |
7+ | 61.59 грн |
20+ | 47.37 грн |
B2D04065K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 20µA
Power dissipation: 39W
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 34A
Max. off-state voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Case: TO220-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 20µA
Power dissipation: 39W
Max. forward voltage: 1.6V
Load current: 4A
Max. forward impulse current: 34A
Max. off-state voltage: 650V
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 27 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 93.87 грн |
5+ | 76.75 грн |
20+ | 56.85 грн |
54+ | 54.01 грн |
B2D04065KF1 |
Виробник: BASiC SEMICONDUCTOR
B2D04065KF1 THT Schottky diodes
B2D04065KF1 THT Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065V |
Виробник: BASiC SEMICONDUCTOR
B2D04065V SMD Schottky diodes
B2D04065V SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D04065V1 |
Виробник: BASiC SEMICONDUCTOR
B2D04065V1 SMD Schottky diodes
B2D04065V1 SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D05120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
B2D05120E1 |
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Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 5A; reel,tape
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
B2D05120K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 111.39 грн |
5+ | 93.96 грн |
11+ | 85.27 грн |
25+ | 82.90 грн |
30+ | 81.32 грн |
100+ | 78.17 грн |
B2D05120K1 |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ir: 30uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Leakage current: 30µA
Max. forward voltage: 1.75V
Load current: 5A
Max. forward impulse current: 55A
Power dissipation: 64W
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 132 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 133.67 грн |
5+ | 117.09 грн |
11+ | 102.33 грн |
25+ | 99.48 грн |
30+ | 97.59 грн |
100+ | 93.80 грн |
B2D06065E1 |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
на замовлення 2448 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 93.53 грн |
6+ | 78.17 грн |
15+ | 64.74 грн |
40+ | 60.80 грн |
500+ | 59.22 грн |
B2D06065E1 |
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Case: TO252-2
Mounting: SMD
Kind of package: reel; tape
Load current: 6A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 2448 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.24 грн |
5+ | 97.41 грн |
15+ | 77.69 грн |
40+ | 72.96 грн |
500+ | 71.06 грн |
B2D06065K1 |
Виробник: BASiC SEMICONDUCTOR
B2D06065K1 THT Schottky diodes
B2D06065K1 THT Schottky diodes
на замовлення 100 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 156.11 грн |
12+ | 93.80 грн |
33+ | 88.11 грн |
B2D06065KF1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
на замовлення 153 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 88.43 грн |
12+ | 82.11 грн |
25+ | 78.17 грн |
100+ | 75.01 грн |
B2D06065KF1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 153 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 126.52 грн |
5+ | 110.20 грн |
12+ | 98.54 грн |
25+ | 93.80 грн |
100+ | 90.01 грн |
B2D06065KS |
Виробник: BASiC SEMICONDUCTOR
B2D06065KS THT Schottky diodes
B2D06065KS THT Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D06065Q |
Виробник: BASiC SEMICONDUCTOR
B2D06065Q SMD Schottky diodes
B2D06065Q SMD Schottky diodes
товару немає в наявності
В кошику
од. на суму грн.
B2D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 113.94 грн |
B2D08065K |
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Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 136.73 грн |
5+ | 119.05 грн |
11+ | 103.27 грн |
25+ | 101.38 грн |
30+ | 97.59 грн |
100+ | 92.85 грн |
B2D08065K1 |
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
на замовлення 80 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 120.74 грн |
5+ | 100.27 грн |
11+ | 86.06 грн |
30+ | 81.32 грн |