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B1D08065F B1D08065F BASiC SEMICONDUCTOR B1D08065F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
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B1D08065K B1D08065K BASiC SEMICONDUCTOR B1D08065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+452.94 грн
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B1D08065KS B1D08065KS BASiC SEMICONDUCTOR B1D08065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
4+130.45 грн
5+109.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
B1D15065K B1D15065K BASiC SEMICONDUCTOR B1D15065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. off-state voltage: 650V
Case: TO220-2
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
3+220.13 грн
5+183.38 грн
Мінімальне замовлення: 3
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B1D16065HC B1D16065HC BASiC SEMICONDUCTOR B1D16065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
2+251.84 грн
Мінімальне замовлення: 2
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B1D20065HC B1D20065HC BASiC SEMICONDUCTOR B1D20065HC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
2+349.67 грн
5+292.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D04065E1 B2D04065E1 BASiC SEMICONDUCTOR B2D04065E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 31A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 39W
на замовлення 2451 шт:
термін постачання 14-30 дні (днів)
7+65.22 грн
8+54.68 грн
25+47.95 грн
100+42.90 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
B2D04065K1 B2D04065K1 BASiC SEMICONDUCTOR B2D04065K1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
7+74.28 грн
8+58.88 грн
25+52.15 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
B2D08065K B2D08065K BASiC SEMICONDUCTOR B2D08065K.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
3+151.28 грн
Мінімальне замовлення: 3
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B2D08065K1 B2D08065K1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
4+115.05 грн
5+95.89 грн
25+84.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
B2D08065KS B2D08065KS BASiC SEMICONDUCTOR B2D08065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
4+123.20 грн
5+102.62 грн
25+90.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
B2D10065KS B2D10065KS BASiC SEMICONDUCTOR B2D10065KS.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 10µA
Power dissipation: 47W
Kind of package: tube
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
3+164.87 грн
5+137.95 грн
25+121.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
B2D10120E1 BASiC SEMICONDUCTOR B2D10120E1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Leakage current: 16µA
Max. forward impulse current: 95A
Kind of package: reel; tape
Power dissipation: 72W
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B2D10120H1 B2D10120H1 BASiC SEMICONDUCTOR B2D10120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Power dissipation: 62W
Kind of package: tube
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
3+211.98 грн
5+177.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
B2D16065HC1 B2D16065HC1 BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 11µA
Max. forward voltage: 1.73V
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
2+276.29 грн
3+230.48 грн
10+203.56 грн
30+195.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20065F1 B2D20065F1 BASiC SEMICONDUCTOR B2D20065F1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 13µA
Load current: 20A
Power dissipation: 100W
Max. forward impulse current: 140A
Max. forward voltage: 1.67V
Max. off-state voltage: 650V
Kind of package: reel; tape
Case: TO263-2
на замовлення 520 шт:
термін постачання 14-30 дні (днів)
2+255.46 грн
5+213.66 грн
25+212.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20065H1 B2D20065H1 BASiC SEMICONDUCTOR B2D20065H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Mounting: THT
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 15µA
Load current: 20A
Power dissipation: 130W
Max. forward impulse current: 146A
Max. forward voltage: 1.7V
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-2
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
2+318.87 грн
3+265.81 грн
10+235.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20065HC1 B2D20065HC1 BASiC SEMICONDUCTOR B2D20065HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 30µA
Load current: 10A x2
Power dissipation: 74W
Max. forward impulse current: 70A
Max. forward voltage: 1.75V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
2+318.87 грн
5+265.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20065TF B2D20065TF BASiC SEMICONDUCTOR B2D20065TF.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 20µA
Load current: 10A x2
Power dissipation: 33W
Max. forward impulse current: 70A
Max. forward voltage: 1.62V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO3PF
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
2+257.27 грн
5+211.98 грн
30+211.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20120F1 B2D20120F1 BASiC SEMICONDUCTOR B2D20120F1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
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B2D20120H1 B2D20120H1 BASiC SEMICONDUCTOR B2D20120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
2+396.78 грн
5+331.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20120HC1 B2D20120HC1 BASiC SEMICONDUCTOR B2D20120HC1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 60W
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
2+396.78 грн
5+331.42 грн
30+292.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D60120H1 B2D60120H1 BASiC SEMICONDUCTOR B2D60120H1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
1+1271.86 грн
3+1064.93 грн
10+942.12 грн
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B2DM100120N1 BASiC SEMICONDUCTOR B2DM100120N1.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Max. off-state voltage: 1.2kV
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 540A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Electrical mounting: screw
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B2M065120Z B2M065120Z BASiC SEMICONDUCTOR B2M065120Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
1+885.95 грн
3+740.24 грн
10+651.91 грн
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B3D08065E BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-3; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-3
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 91W
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B3D08065K BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 94W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 56A
Kind of package: tube
Power dissipation: 94W
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B3D08065KS BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; 75W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward impulse current: 60A
Kind of package: tube
Power dissipation: 75W
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B3D20120F BASiC SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
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B3D20120H BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
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B3D20120HC BASiC SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
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B3DM060065N BASiC SEMICONDUCTOR B3DM060065N.pdf Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Load current: 60A x2
Max. off-state voltage: 650V
Max. load current: 360A
Max. forward impulse current: 420A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
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B3DM060120N BASiC SEMICONDUCTOR B3DM060120N.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Max. load current: 360A
Max. forward impulse current: 520A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Electrical mounting: screw
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B3DM100120N BASiC SEMICONDUCTOR B3DM100120N.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Max. off-state voltage: 1.2kV
Load current: 100A x2
Max. load current: 600A
Max. forward impulse current: 700A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Electrical mounting: screw
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B3M025065L BASiC SEMICONDUCTOR B3M025065L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 76A; Idm: 166A; 375W; TOLL
Mounting: SMD
Case: TOLL
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...18V
Gate charge: 98nC
On-state resistance: 25mΩ
Power dissipation: 375W
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 166A
Kind of channel: enhancement
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BGH40N120HF BGH40N120HF BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
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BGH40N120HS1 BGH40N120HS1 BASiC SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Technology: Field Stop; SiC SBD; Trench
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Collector current: 40A
Collector-emitter voltage: 1.2kV
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
1+697.53 грн
3+584.62 грн
10+516.48 грн
30+465.17 грн
В кошику  од. на суму  грн.
BGH50N65HF1 BGH50N65HF1 BASiC SEMICONDUCTOR BGH50N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
1+945.74 грн
5+794.91 грн
30+699.86 грн
В кошику  од. на суму  грн.
BGH50N65HS1 BGH50N65HS1 BASiC SEMICONDUCTOR BGH50N65HS1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
1+862.40 грн
5+720.05 грн
30+635.93 грн
В кошику  од. на суму  грн.
BGH50N65ZF1 BGH50N65ZF1 BASiC SEMICONDUCTOR BGH50N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
1+760.94 грн
5+635.93 грн
В кошику  од. на суму  грн.
BGH75N120HF1 BGH75N120HF1 BASiC SEMICONDUCTOR BGH75N120HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+801.71 грн
3+672.94 грн
В кошику  од. на суму  грн.
BGH75N65HF1 BGH75N65HF1 BASiC SEMICONDUCTOR BGH75N65HF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
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BGH75N65ZF1 BGH75N65ZF1 BASiC SEMICONDUCTOR BGH75N65ZF1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
1+1027.27 грн
5+855.48 грн
В кошику  од. на суму  грн.
BTD21520EAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520EBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520MAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520MBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520SAPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520SBPR BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTL27524R BTL27524R BASiC SEMICONDUCTOR Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
на замовлення 2343 шт:
термін постачання 14-30 дні (днів)
7+74.28 грн
8+59.22 грн
25+51.98 грн
100+46.60 грн
250+43.74 грн
1000+42.23 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTP2845DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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BTP2845DSR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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BTP3843DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
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BTP3845DR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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BTP3845DSR BASiC SEMICONDUCTOR Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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B1D08065F B1D08065F.pdf
B1D08065F
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: reel; tape
Power dissipation: 48W
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B1D08065K B1D08065K.pdf
B1D08065K
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 56W
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+452.94 грн
В кошику  од. на суму  грн.
B1D08065KS B1D08065KS.pdf
B1D08065KS
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.73V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 32W
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+130.45 грн
5+109.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
B1D15065K B1D15065K.pdf
B1D15065K
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Kind of package: tube
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 1.75V
Load current: 15A
Power dissipation: 84W
Max. forward impulse current: 112A
Max. off-state voltage: 650V
Case: TO220-2
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+220.13 грн
5+183.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
B1D16065HC B1D16065HC.pdf
B1D16065HC
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 10uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.75V
Power dissipation: 73W
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+251.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B1D20065HC B1D20065HC.pdf
B1D20065HC
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Mounting: THT
Application: automotive industry
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+349.67 грн
5+292.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D04065E1 B2D04065E1.pdf
B2D04065E1
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO252-2
Max. forward voltage: 1.6V
Max. forward impulse current: 31A
Leakage current: 20µA
Kind of package: reel; tape
Power dissipation: 39W
на замовлення 2451 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+65.22 грн
8+54.68 грн
25+47.95 грн
100+42.90 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
B2D04065K1 B2D04065K1.pdf
B2D04065K1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220-2; Ufmax: 1.6V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.6V
Max. forward impulse current: 34A
Leakage current: 20µA
Kind of package: tube
Power dissipation: 39W
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+74.28 грн
8+58.88 грн
25+52.15 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
B2D08065K B2D08065K.pdf
B2D08065K
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 60A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 57W
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+151.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
B2D08065K1
B2D08065K1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ufmax: 1V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1V
Max. forward impulse current: 56A
Leakage current: 11µA
Kind of package: tube
Power dissipation: 64W
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+115.05 грн
5+95.89 грн
25+84.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
B2D08065KS B2D08065KS.pdf
B2D08065KS
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.54V
Max. forward impulse current: 64A
Leakage current: 10µA
Kind of package: tube
Power dissipation: 37W
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+123.20 грн
5+102.62 грн
25+90.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
B2D10065KS B2D10065KS.pdf
B2D10065KS
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.7V
Max. forward impulse current: 85A
Leakage current: 10µA
Power dissipation: 47W
Kind of package: tube
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+164.87 грн
5+137.95 грн
25+121.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
B2D10120E1 B2D10120E1.pdf
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 1.2kV; 10A; 72W
Type of diode: Schottky rectifying
Case: TO252-2
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.95V
Leakage current: 16µA
Max. forward impulse current: 95A
Kind of package: reel; tape
Power dissipation: 72W
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B2D10120H1 B2D10120H1.pdf
B2D10120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 90A
Leakage current: 30µA
Power dissipation: 62W
Kind of package: tube
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+211.98 грн
5+177.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
B2D16065HC1
B2D16065HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; Ir: 11uA
Mounting: THT
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 11µA
Max. forward voltage: 1.73V
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 650V
Case: TO247-3
Kind of package: tube
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+276.29 грн
3+230.48 грн
10+203.56 грн
30+195.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20065F1 B2D20065F1.pdf
B2D20065F1
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 650V; 20A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 13µA
Load current: 20A
Power dissipation: 100W
Max. forward impulse current: 140A
Max. forward voltage: 1.67V
Max. off-state voltage: 650V
Kind of package: reel; tape
Case: TO263-2
на замовлення 520 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+255.46 грн
5+213.66 грн
25+212.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20065H1 B2D20065H1.pdf
B2D20065H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 15uA
Mounting: THT
Semiconductor structure: single diode
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 15µA
Load current: 20A
Power dissipation: 130W
Max. forward impulse current: 146A
Max. forward voltage: 1.7V
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-2
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+318.87 грн
3+265.81 грн
10+235.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20065HC1 B2D20065HC1.pdf
B2D20065HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 30uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 30µA
Load current: 10A x2
Power dissipation: 74W
Max. forward impulse current: 70A
Max. forward voltage: 1.75V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO247-3
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+318.87 грн
5+265.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20065TF B2D20065TF.pdf
B2D20065TF
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO3PF; Ir: 20uA
Mounting: THT
Semiconductor structure: common cathode; double
Technology: SiC
Type of diode: Schottky rectifying
Leakage current: 20µA
Load current: 10A x2
Power dissipation: 33W
Max. forward impulse current: 70A
Max. forward voltage: 1.62V
Max. load current: 20A
Max. off-state voltage: 650V
Kind of package: tube
Case: TO3PF
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+257.27 грн
5+211.98 грн
30+211.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20120F1 B2D20120F1.pdf
B2D20120F1
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 122W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward voltage: 1.8V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 33µA
Power dissipation: 122W
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B2D20120H1 B2D20120H1.pdf
B2D20120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.78V
Max. forward impulse current: 190A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 159W
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+396.78 грн
5+331.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D20120HC1 B2D20120HC1.pdf
B2D20120HC1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 60W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 60W
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+396.78 грн
5+331.42 грн
30+292.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
B2D60120H1 B2D60120H1.pdf
B2D60120H1
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 70uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2.1V
Max. forward impulse current: 340A
Kind of package: tube
Technology: SiC
Leakage current: 70µA
Power dissipation: 361W
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1271.86 грн
3+1064.93 грн
10+942.12 грн
В кошику  од. на суму  грн.
B2DM100120N1 B2DM100120N1.pdf
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Max. off-state voltage: 1.2kV
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 540A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Electrical mounting: screw
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B2M065120Z B2M065120Z.pdf
B2M065120Z
Виробник: BASiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 85A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 85A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+885.95 грн
3+740.24 грн
10+651.91 грн
В кошику  од. на суму  грн.
B3D08065E
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-3; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO252-3
Max. forward impulse current: 60A
Kind of package: reel; tape
Power dissipation: 91W
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B3D08065K
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; 94W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 56A
Kind of package: tube
Power dissipation: 94W
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B3D08065KS
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ISO; 75W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward impulse current: 60A
Kind of package: tube
Power dissipation: 75W
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B3D20120F
Виробник: BASiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263-2; SiC; SMD; 1.2kV; 20A; 273W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO263-2
Max. forward impulse current: 160A
Kind of package: reel; tape
Power dissipation: 273W
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B3D20120H
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 259W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 160A
Kind of package: tube
Power dissipation: 259W
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B3D20120HC
Виробник: BASiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 20A
Max. forward impulse current: 90A
Kind of package: tube
Power dissipation: 167W
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B3DM060065N B3DM060065N.pdf
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 60Ax2; SOT227; screw
Load current: 60A x2
Max. off-state voltage: 650V
Max. load current: 360A
Max. forward impulse current: 420A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
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B3DM060120N B3DM060120N.pdf
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227; screw
Max. off-state voltage: 1.2kV
Load current: 60A x2
Max. load current: 360A
Max. forward impulse current: 520A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Electrical mounting: screw
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B3DM100120N B3DM100120N.pdf
Виробник: BASiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227; screw
Max. off-state voltage: 1.2kV
Load current: 100A x2
Max. load current: 600A
Max. forward impulse current: 700A
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Case: SOT227
Technology: SiC
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Electrical mounting: screw
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B3M025065L B3M025065L.pdf
Виробник: BASiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 76A; Idm: 166A; 375W; TOLL
Mounting: SMD
Case: TOLL
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -5...18V
Gate charge: 98nC
On-state resistance: 25mΩ
Power dissipation: 375W
Drain-source voltage: 650V
Drain current: 76A
Pulsed drain current: 166A
Kind of channel: enhancement
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BGH40N120HF
BGH40N120HF
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
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BGH40N120HS1
BGH40N120HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Technology: Field Stop; SiC SBD; Trench
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Collector current: 40A
Collector-emitter voltage: 1.2kV
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+697.53 грн
3+584.62 грн
10+516.48 грн
30+465.17 грн
В кошику  од. на суму  грн.
BGH50N65HF1 BGH50N65HF1.pdf
BGH50N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+945.74 грн
5+794.91 грн
30+699.86 грн
В кошику  од. на суму  грн.
BGH50N65HS1 BGH50N65HS1.pdf
BGH50N65HS1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+862.40 грн
5+720.05 грн
30+635.93 грн
В кошику  од. на суму  грн.
BGH50N65ZF1 BGH50N65ZF1.pdf
BGH50N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 476ns
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+760.94 грн
5+635.93 грн
В кошику  од. на суму  грн.
BGH75N120HF1 BGH75N120HF1.pdf
BGH75N120HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Mounting: THT
Kind of package: tube
Turn-on time: 140ns
Gate charge: 398nC
Turn-off time: 443ns
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 568W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Technology: Field Stop; SiC SBD; Trench
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+801.71 грн
3+672.94 грн
В кошику  од. на суму  грн.
BGH75N65HF1 BGH75N65HF1.pdf
BGH75N65HF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
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BGH75N65ZF1 BGH75N65ZF1.pdf
BGH75N65ZF1
Виробник: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-4
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 565ns
Turn-on time: 84ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1027.27 грн
5+855.48 грн
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BTD21520EAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520EBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520MAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520MBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520SAPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTD21520SBPR
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOP16; -6÷4A; Ch: 2; 3÷18VDC; 5kV
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOP16
Output current: -6...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Insulation voltage: 5kV
Integrated circuit features: galvanically isolated
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BTL27524R
BTL27524R
Виробник: BASiC SEMICONDUCTOR
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOP8; -5÷5A; Ch: 2; 4.5÷20VDC
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...140°C
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...20V DC
Kind of integrated circuit: gate driver; low-side
Type of integrated circuit: driver
Kind of output: non-inverting
на замовлення 2343 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+74.28 грн
8+59.22 грн
25+51.98 грн
100+46.60 грн
250+43.74 грн
1000+42.23 грн
Мінімальне замовлення: 7
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BTP2845DR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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BTP2845DSR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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BTP3843DR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Case: SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...70°C
Output current: 1A
Frequency: 0.5MHz
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BTP3845DR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; SOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: SOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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BTP3845DSR
Виробник: BASiC SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 500kHz; MSOP8; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 0.5MHz
Case: MSOP8
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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