| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BXIB-L1092W-50E300M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXIR-85090BA-1300 | Bridgelux |
Description: EMITTER IR 850NM SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BXIR-85090BA-1300 | Bridgelux |
Description: EMITTER IR 850NM SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BXIR-85120AA-0900 | Bridgelux |
Description: IR 3535 SMD, 0900MW MIN, 850NM, |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BXP10N60F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 48W Case: TO220F On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A |
на замовлення 727 шт: термін постачання 21-30 дні (днів) |
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BXP10N60F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 48W Case: TO220F On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A кількість в упаковці: 1 шт |
на замовлення 727 шт: термін постачання 14-21 дні (днів) |
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BXP10N65CF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 32nC Pulsed drain current: 40A |
на замовлення 674 шт: термін постачання 21-30 дні (днів) |
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BXP10N65CF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 32nC Pulsed drain current: 40A кількість в упаковці: 1 шт |
на замовлення 674 шт: термін постачання 14-21 дні (днів) |
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| BXP10N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 44W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 71nC Pulsed drain current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP10N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP12N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 39nC Pulsed drain current: 48A |
на замовлення 346 шт: термін постачання 21-30 дні (днів) |
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BXP12N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 39nC Pulsed drain current: 48A кількість в упаковці: 1 шт |
на замовлення 346 шт: термін постачання 14-21 дні (днів) |
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BXP13N50F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Pulsed drain current: 52A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 953 шт: термін постачання 21-30 дні (днів) |
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BXP13N50F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Pulsed drain current: 52A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 953 шт: термін постачання 14-21 дні (днів) |
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| BXP13N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 52A Power dissipation: 158W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP16N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Power dissipation: 43W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35nC Pulsed drain current: 64A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BXP18N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252 Case: TO252 Mounting: SMD On-state resistance: 0.18Ω Drain current: 18A Gate-source voltage: ±30V Power dissipation: 90W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tube Polarisation: unipolar Gate charge: 23nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP18N20H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Mounting: THT Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP18N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220 Case: TO220 Mounting: THT On-state resistance: 0.18Ω Drain current: 18A Gate-source voltage: ±30V Power dissipation: 95W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 23nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP18N50F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
на замовлення 881 шт: термін постачання 21-30 дні (днів) |
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BXP18N50F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 881 шт: термін постачання 14-21 дні (днів) |
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| BXP20N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 39W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP20N50H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP2N20L | BRIDGELUX | BXP2N20L SMD N channel transistors |
на замовлення 2234 шт: термін постачання 14-21 дні (днів) |
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BXP2N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1628 шт: термін постачання 21-30 дні (днів) |
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BXP2N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1628 шт: термін постачання 14-21 дні (днів) |
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| BXP2N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Case: TO220F Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP2N65N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 3W Case: SOT223-3L Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP2N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Pulsed drain current: 8A Power dissipation: 44W Case: TO251 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Gate charge: 8.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1495 шт: термін постачання 21-30 дні (днів) |
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BXP2N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Pulsed drain current: 8A Power dissipation: 44W Case: TO251 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Gate charge: 8.5nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1495 шт: термін постачання 14-21 дні (днів) |
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| BXP3N1KD | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; Idm: 12A; 90W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 90W Case: TO252 Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP3N1KF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Pulsed drain current: 12A Power dissipation: 25W Case: TO220F Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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BXP3N1KF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Pulsed drain current: 12A Power dissipation: 25W Case: TO220F Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 795 шт: термін постачання 14-21 дні (днів) |
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| BXP3N50D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Pulsed drain current: 12A Power dissipation: 50W Case: TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP4N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1281 шт: термін постачання 21-30 дні (днів) |
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BXP4N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1281 шт: термін постачання 14-21 дні (днів) |
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BXP4N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1943 шт: термін постачання 21-30 дні (днів) |
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BXP4N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1943 шт: термін постачання 14-21 дні (днів) |
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BXP4N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 37W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1651 шт: термін постачання 21-30 дні (днів) |
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BXP4N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 37W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1651 шт: термін постачання 14-21 дні (днів) |
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BXP4N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1597 шт: термін постачання 21-30 дні (днів) |
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BXP4N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1597 шт: термін постачання 14-21 дні (днів) |
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| BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP4N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Case: TO220F Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP5N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Pulsed drain current: 20A Power dissipation: 41W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Gate charge: 9nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP5N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP6N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 24A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP7N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP7N60F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 28A Power dissipation: 45W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP7N60P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 28A Power dissipation: 166W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BXP7N60U | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 28A Power dissipation: 145W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP7N65CF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 46W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
на замовлення 769 шт: термін постачання 21-30 дні (днів) |
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BXP7N65CF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 46W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 769 шт: термін постачання 14-21 дні (днів) |
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BXP7N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2429 шт: термін постачання 21-30 дні (днів) |
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BXP7N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2429 шт: термін постачання 14-21 дні (днів) |
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BXP7N65P | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 167W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
на замовлення 689 шт: термін постачання 21-30 дні (днів) |
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BXP7N65P | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 167W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 689 шт: термін постачання 14-21 дні (днів) |
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BXP7N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BXP7N80F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 28A Power dissipation: 43.9W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BXP8N50D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 32A Power dissipation: 100W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| BXIR-85090BA-1300 |
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Виробник: Bridgelux
Description: EMITTER IR 850NM SMD
Description: EMITTER IR 850NM SMD
товару немає в наявності
В кошику
од. на суму грн.
| BXIR-85090BA-1300 |
![]() |
Виробник: Bridgelux
Description: EMITTER IR 850NM SMD
Description: EMITTER IR 850NM SMD
товару немає в наявності
В кошику
од. на суму грн.
| BXIR-85120AA-0900 |
![]() |
Виробник: Bridgelux
Description: IR 3535 SMD, 0900MW MIN, 850NM,
Description: IR 3535 SMD, 0900MW MIN, 850NM,
товару немає в наявності
В кошику
од. на суму грн.
| BXP10N60F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 727 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.11 грн |
| 10+ | 43.35 грн |
| 25+ | 38.90 грн |
| 100+ | 34.52 грн |
| 250+ | 30.94 грн |
| BXP10N60F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
кількість в упаковці: 1 шт
на замовлення 727 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.74 грн |
| 10+ | 54.03 грн |
| 25+ | 46.68 грн |
| 100+ | 41.43 грн |
| 250+ | 37.13 грн |
| 1000+ | 35.89 грн |
| BXP10N65CF |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
на замовлення 674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 47.97 грн |
| 12+ | 33.81 грн |
| 25+ | 29.27 грн |
| 100+ | 26.73 грн |
| BXP10N65CF |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
кількість в упаковці: 1 шт
на замовлення 674 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.57 грн |
| 10+ | 42.13 грн |
| 25+ | 35.13 грн |
| 100+ | 32.07 грн |
| BXP10N80F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
товару немає в наявності
В кошику
од. на суму грн.
| BXP10N90F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP12N65F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
на замовлення 346 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.24 грн |
| 10+ | 61.41 грн |
| 25+ | 54.73 грн |
| 100+ | 45.98 грн |
| 250+ | 41.37 грн |
| BXP12N65F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Pulsed drain current: 48A
кількість в упаковці: 1 шт
на замовлення 346 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.69 грн |
| 10+ | 76.53 грн |
| 25+ | 65.68 грн |
| 100+ | 55.18 грн |
| 250+ | 49.64 грн |
| 500+ | 43.82 грн |
| 1000+ | 40.57 грн |
| BXP13N50F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 953 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.25 грн |
| 10+ | 56.72 грн |
| 25+ | 50.67 грн |
| 100+ | 42.56 грн |
| 250+ | 38.26 грн |
| 500+ | 33.81 грн |
| BXP13N50F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 953 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.49 грн |
| 10+ | 70.68 грн |
| 25+ | 60.81 грн |
| 100+ | 51.07 грн |
| 250+ | 45.92 грн |
| 500+ | 40.57 грн |
| 1000+ | 39.14 грн |
| BXP13N50P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP16N65F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 64A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 64A
товару немає в наявності
В кошику
од. на суму грн.
| BXP18N20D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
товару немає в наявності
В кошику
од. на суму грн.
| BXP18N20H |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| BXP18N20P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
товару немає в наявності
В кошику
од. на суму грн.
| BXP18N50F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 881 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.66 грн |
| 10+ | 80.98 грн |
| 25+ | 72.55 грн |
| 100+ | 61.01 грн |
| 250+ | 54.97 грн |
| 500+ | 48.37 грн |
| BXP18N50F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 881 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.59 грн |
| 10+ | 100.92 грн |
| 25+ | 87.06 грн |
| 100+ | 73.22 грн |
| 250+ | 65.96 грн |
| 500+ | 58.04 грн |
| 1000+ | 52.22 грн |
| BXP20N50F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP20N50H |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP2N20L |
Виробник: BRIDGELUX
BXP2N20L SMD N channel transistors
BXP2N20L SMD N channel transistors
на замовлення 2234 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 26+ | 12.13 грн |
| 202+ | 5.63 грн |
| 554+ | 5.25 грн |
| BXP2N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1628 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.56 грн |
| 37+ | 10.82 грн |
| 41+ | 9.71 грн |
| 100+ | 8.11 грн |
| 250+ | 7.32 грн |
| 500+ | 6.44 грн |
| 1000+ | 5.97 грн |
| BXP2N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1628 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.48 грн |
| 23+ | 13.48 грн |
| 25+ | 11.65 грн |
| 100+ | 9.74 грн |
| 250+ | 8.78 грн |
| 500+ | 7.73 грн |
| 1000+ | 7.16 грн |
| BXP2N65F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP2N65N |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP2N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.42 грн |
| 34+ | 11.85 грн |
| 38+ | 10.66 грн |
| 75+ | 8.91 грн |
| 225+ | 8.03 грн |
| 525+ | 7.08 грн |
| 975+ | 7.00 грн |
| BXP2N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1495 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.50 грн |
| 21+ | 14.77 грн |
| 25+ | 12.79 грн |
| 75+ | 10.69 грн |
| 225+ | 9.64 грн |
| 525+ | 8.50 грн |
| 975+ | 8.40 грн |
| BXP3N1KD |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; Idm: 12A; 90W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; Idm: 12A; 90W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP3N1KF |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.68 грн |
| 10+ | 45.10 грн |
| 25+ | 36.12 грн |
| 41+ | 22.91 грн |
| 113+ | 21.64 грн |
| 500+ | 21.48 грн |
| BXP3N1KF |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1.6A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 795 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.82 грн |
| 10+ | 56.21 грн |
| 25+ | 43.34 грн |
| 41+ | 27.49 грн |
| 113+ | 25.96 грн |
| 500+ | 25.77 грн |
| 1000+ | 25.01 грн |
| BXP3N50D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP4N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1281 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.70 грн |
| 17+ | 23.55 грн |
| 25+ | 21.00 грн |
| 100+ | 17.66 грн |
| 250+ | 15.91 грн |
| 500+ | 14.00 грн |
| 1000+ | 12.57 грн |
| BXP4N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1281 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.04 грн |
| 11+ | 29.34 грн |
| 25+ | 25.20 грн |
| 100+ | 21.19 грн |
| 250+ | 19.09 грн |
| 500+ | 16.80 грн |
| 1000+ | 15.08 грн |
| BXP4N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1943 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.13 грн |
| 24+ | 17.26 грн |
| 26+ | 15.43 грн |
| 100+ | 12.97 грн |
| 250+ | 11.69 грн |
| 500+ | 10.26 грн |
| 1000+ | 9.23 грн |
| BXP4N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1943 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.76 грн |
| 14+ | 21.51 грн |
| 25+ | 18.52 грн |
| 100+ | 15.56 грн |
| 250+ | 14.03 грн |
| 500+ | 12.31 грн |
| 1000+ | 11.07 грн |
| BXP4N65F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1651 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.84 грн |
| 22+ | 18.14 грн |
| 30+ | 16.23 грн |
| 120+ | 13.60 грн |
| 240+ | 12.17 грн |
| 480+ | 10.82 грн |
| 960+ | 10.58 грн |
| BXP4N65F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1651 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.81 грн |
| 14+ | 22.60 грн |
| 30+ | 19.47 грн |
| 120+ | 16.32 грн |
| 240+ | 14.61 грн |
| 480+ | 12.98 грн |
| 960+ | 12.70 грн |
| BXP4N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1597 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.42 грн |
| 25+ | 16.07 грн |
| 28+ | 14.40 грн |
| 75+ | 12.09 грн |
| 225+ | 10.90 грн |
| 525+ | 9.63 грн |
| 975+ | 8.67 грн |
| BXP4N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1597 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 25.70 грн |
| 15+ | 20.02 грн |
| 25+ | 17.28 грн |
| 75+ | 14.51 грн |
| 225+ | 13.08 грн |
| 525+ | 11.55 грн |
| 975+ | 10.41 грн |
| BXP4N80D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP4N80F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP5N20D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Gate charge: 9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Gate charge: 9nC
товару немає в наявності
В кошику
од. на суму грн.
| BXP5N20P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP6N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP7N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP7N60F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP7N60P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP7N60U |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP7N65CF |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 769 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.69 грн |
| 12+ | 35.80 грн |
| 25+ | 28.80 грн |
| 100+ | 24.18 грн |
| 250+ | 21.80 грн |
| 500+ | 19.25 грн |
| BXP7N65CF |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 769 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.63 грн |
| 10+ | 44.61 грн |
| 25+ | 34.56 грн |
| 100+ | 29.02 грн |
| 250+ | 26.16 грн |
| 500+ | 23.10 грн |
| 1000+ | 22.15 грн |
| BXP7N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.97 грн |
| 11+ | 38.82 грн |
| 25+ | 31.26 грн |
| 100+ | 26.25 грн |
| 250+ | 23.63 грн |
| 500+ | 20.92 грн |
| 1000+ | 18.77 грн |
| BXP7N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2429 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.96 грн |
| 10+ | 48.38 грн |
| 25+ | 37.52 грн |
| 100+ | 31.50 грн |
| 250+ | 28.35 грн |
| 500+ | 25.11 грн |
| 1000+ | 22.53 грн |
| BXP7N65P |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 689 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.82 грн |
| 10+ | 42.24 грн |
| 25+ | 37.79 грн |
| 100+ | 31.74 грн |
| 250+ | 28.56 грн |
| 500+ | 25.22 грн |
| BXP7N65P |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 689 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.19 грн |
| 10+ | 52.64 грн |
| 25+ | 45.34 грн |
| 100+ | 38.09 грн |
| 250+ | 34.27 грн |
| 500+ | 30.26 грн |
| 1000+ | 27.21 грн |
| BXP7N65U |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP7N80F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 28A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 28A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP8N50D |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.








