Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BXIR-85090BA-1300 | Bridgelux |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BXIR-85120AA-0900 | Bridgelux |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BXKC-65E1501-B-14 | BRIDGELUX | BXKC-65E1501-B-14 White power LEDs - COB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP10N60F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 48W Case: TO220F On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A |
на замовлення 954 шт: термін постачання 21-30 дні (днів) |
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BXP10N60F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 48W Case: TO220F On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A кількість в упаковці: 1 шт |
на замовлення 954 шт: термін постачання 14-21 дні (днів) |
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BXP10N65CF | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 32nC Pulsed drain current: 40A |
на замовлення 807 шт: термін постачання 21-30 дні (днів) |
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BXP10N65CF | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 32nC Pulsed drain current: 40A кількість в упаковці: 1 шт |
на замовлення 807 шт: термін постачання 14-21 дні (днів) |
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BXP10N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 44W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 71nC Pulsed drain current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP10N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 44W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 71nC Pulsed drain current: 40A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP10N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP10N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Mounting: THT Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP12N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 39nC |
на замовлення 439 шт: термін постачання 21-30 дні (днів) |
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BXP12N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 39nC кількість в упаковці: 1 шт |
на замовлення 439 шт: термін постачання 14-21 дні (днів) |
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BXP13N50F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 51W Gate charge: 38nC Pulsed drain current: 52A |
на замовлення 953 шт: термін постачання 21-30 дні (днів) |
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BXP13N50F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 51W Gate charge: 38nC Pulsed drain current: 52A кількість в упаковці: 1 шт |
на замовлення 953 шт: термін постачання 14-21 дні (днів) |
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BXP13N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 158W Gate charge: 38nC Pulsed drain current: 52A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP13N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 158W Gate charge: 38nC Pulsed drain current: 52A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP16N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Pulsed drain current: 64A Power dissipation: 43W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BXP16N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Pulsed drain current: 64A Power dissipation: 43W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BXP18N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP18N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP18N20F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F Case: TO220F Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar |
на замовлення 302 шт: термін постачання 21-30 дні (днів) |
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BXP18N20F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F Case: TO220F Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 11A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 302 шт: термін постачання 14-21 дні (днів) |
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BXP18N20H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Mounting: THT Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP18N20H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Mounting: THT Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP18N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220 Case: TO220 Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP18N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220 Case: TO220 Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 72A Drain-source voltage: 200V Drain current: 18A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP18N50F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BXP18N50F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BXP20N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 39W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP20N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 39W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP20N50H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP20N50H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Mounting: THT Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP2N20L | BRIDGELUX | BXP2N20L SMD N channel transistors |
на замовлення 2435 шт: термін постачання 14-21 дні (днів) |
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BXP2N65A | BRIDGELUX | BXP2N65A THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP2N65D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1687 шт: термін постачання 21-30 дні (днів) |
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BXP2N65D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Pulsed drain current: 8A Power dissipation: 44W Case: TO252 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1687 шт: термін постачання 14-21 дні (днів) |
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BXP2N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Case: TO220F Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP2N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Case: TO220F Mounting: THT Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP2N65N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 3W Case: SOT223-3L Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP2N65N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 8A Power dissipation: 3W Case: SOT223-3L Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP2N65U | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Pulsed drain current: 8A Power dissipation: 44W Case: TO251 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Gate charge: 8.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1555 шт: термін постачання 21-30 дні (днів) |
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BXP2N65U | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Pulsed drain current: 8A Power dissipation: 44W Case: TO251 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Gate charge: 8.5nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1555 шт: термін постачання 14-21 дні (днів) |
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BXP3N1K2D | BRIDGELUX | BXP3N1K2D SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP3N1KD | BRIDGELUX | BXP3N1KD SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP3N1KF | BRIDGELUX | BXP3N1KF THT N channel transistors |
на замовлення 807 шт: термін постачання 14-21 дні (днів) |
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BXP3N50D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Power dissipation: 50W Gate charge: 9nC Pulsed drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP3N50D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Power dissipation: 50W Gate charge: 9nC Pulsed drain current: 12A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BXP4N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1316 шт: термін постачання 21-30 дні (днів) |
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BXP4N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1316 шт: термін постачання 14-21 дні (днів) |
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BXP4N65D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BXP4N65D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 10000 шт: термін постачання 14-21 дні (днів) |
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BXP4N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 37W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1844 шт: термін постачання 21-30 дні (днів) |
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BXP4N65F | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 37W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1844 шт: термін постачання 14-21 дні (днів) |
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BXP4N65U | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
на замовлення 1707 шт: термін постачання 21-30 дні (днів) |
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BXP4N65U | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Pulsed drain current: 16A Power dissipation: 77W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1707 шт: термін постачання 14-21 дні (днів) |
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BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP4N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Case: TO220F Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BXP4N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Case: TO220F Mounting: THT Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. |
BXIR-85090BA-1300 |
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Виробник: Bridgelux
Description: EMITTER IR 850NM SMD
Description: EMITTER IR 850NM SMD
товару немає в наявності
В кошику
од. на суму грн.
BXIR-85120AA-0900 |
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Виробник: Bridgelux
Description: IR 3535 SMD, 0900MW MIN, 850NM,
Description: IR 3535 SMD, 0900MW MIN, 850NM,
товару немає в наявності
В кошику
од. на суму грн.
BXKC-65E1501-B-14 |
Виробник: BRIDGELUX
BXKC-65E1501-B-14 White power LEDs - COB
BXKC-65E1501-B-14 White power LEDs - COB
товару немає в наявності
В кошику
од. на суму грн.
BXP10N60F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 954 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.34 грн |
10+ | 40.85 грн |
25+ | 36.71 грн |
29+ | 31.42 грн |
79+ | 29.66 грн |
250+ | 29.12 грн |
BXP10N60F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
кількість в упаковці: 1 шт
на замовлення 954 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 60.41 грн |
10+ | 50.90 грн |
25+ | 44.05 грн |
29+ | 37.70 грн |
79+ | 35.59 грн |
250+ | 34.94 грн |
1000+ | 34.30 грн |
BXP10N65CF |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
на замовлення 807 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.07 грн |
10+ | 45.44 грн |
25+ | 40.54 грн |
32+ | 28.20 грн |
88+ | 26.67 грн |
BXP10N65CF |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Pulsed drain current: 40A
кількість в упаковці: 1 шт
на замовлення 807 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 73.29 грн |
10+ | 56.63 грн |
25+ | 48.65 грн |
32+ | 33.84 грн |
88+ | 32.00 грн |
1000+ | 30.81 грн |
BXP10N80F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
товару немає в наявності
В кошику
од. на суму грн.
BXP10N80F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 71nC
Pulsed drain current: 40A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP10N90F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXP10N90F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP12N65F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
на замовлення 439 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.65 грн |
10+ | 64.83 грн |
25+ | 57.78 грн |
26+ | 35.63 грн |
70+ | 33.64 грн |
BXP12N65F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 39nC
кількість в упаковці: 1 шт
на замовлення 439 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 103.99 грн |
10+ | 80.79 грн |
25+ | 69.34 грн |
26+ | 42.76 грн |
70+ | 40.37 грн |
BXP13N50F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 51W
Gate charge: 38nC
Pulsed drain current: 52A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 51W
Gate charge: 38nC
Pulsed drain current: 52A
на замовлення 953 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 80.88 грн |
10+ | 60.39 грн |
25+ | 53.87 грн |
27+ | 34.56 грн |
72+ | 32.65 грн |
BXP13N50F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 51W
Gate charge: 38nC
Pulsed drain current: 52A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 51W
Gate charge: 38nC
Pulsed drain current: 52A
кількість в упаковці: 1 шт
на замовлення 953 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 97.05 грн |
10+ | 75.25 грн |
25+ | 64.65 грн |
27+ | 41.47 грн |
72+ | 39.18 грн |
1000+ | 38.81 грн |
BXP13N50P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 158W
Gate charge: 38nC
Pulsed drain current: 52A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 158W
Gate charge: 38nC
Pulsed drain current: 52A
товару немає в наявності
В кошику
од. на суму грн.
BXP13N50P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 158W
Gate charge: 38nC
Pulsed drain current: 52A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 158W
Gate charge: 38nC
Pulsed drain current: 52A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP16N65F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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BXP16N65F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1000 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1000 шт
товару немає в наявності
В кошику
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BXP18N20D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
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BXP18N20D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
кількість в упаковці: 1 шт
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В кошику
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BXP18N20F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
на замовлення 302 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.55 грн |
10+ | 46.75 грн |
25+ | 41.77 грн |
31+ | 29.27 грн |
85+ | 27.66 грн |
BXP18N20F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 11A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 302 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 76.26 грн |
10+ | 58.25 грн |
25+ | 50.12 грн |
31+ | 35.13 грн |
85+ | 33.20 грн |
1000+ | 31.91 грн |
BXP18N20H |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
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В кошику
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BXP18N20H |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP18N20P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
товару немає в наявності
В кошику
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BXP18N20P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
Kind of package: tube
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 72A
Drain-source voltage: 200V
Drain current: 18A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP18N50F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
BXP18N50F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP20N50F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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BXP20N50F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
BXP20N50H |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
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В кошику
од. на суму грн.
BXP20N50H |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP2N20L |
Виробник: BRIDGELUX
BXP2N20L SMD N channel transistors
BXP2N20L SMD N channel transistors
на замовлення 2435 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
19+ | 15.85 грн |
188+ | 5.70 грн |
516+ | 5.43 грн |
BXP2N65A |
Виробник: BRIDGELUX
BXP2N65A THT N channel transistors
BXP2N65A THT N channel transistors
товару немає в наявності
В кошику
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BXP2N65D |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1687 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.68 грн |
34+ | 11.57 грн |
38+ | 10.35 грн |
100+ | 8.66 грн |
144+ | 6.28 грн |
394+ | 5.98 грн |
BXP2N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1687 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
16+ | 18.82 грн |
20+ | 14.42 грн |
25+ | 12.41 грн |
100+ | 10.39 грн |
144+ | 7.54 грн |
394+ | 7.17 грн |
2500+ | 6.99 грн |
BXP2N65F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
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BXP2N65F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
BXP2N65N |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXP2N65N |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP2N65U |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1555 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.68 грн |
33+ | 11.72 грн |
37+ | 10.50 грн |
75+ | 8.81 грн |
123+ | 7.36 грн |
339+ | 6.97 грн |
975+ | 6.74 грн |
BXP2N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Pulsed drain current: 8A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1555 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
16+ | 18.82 грн |
20+ | 14.61 грн |
25+ | 12.60 грн |
75+ | 10.58 грн |
123+ | 8.83 грн |
339+ | 8.37 грн |
975+ | 8.09 грн |
BXP3N1K2D |
Виробник: BRIDGELUX
BXP3N1K2D SMD N channel transistors
BXP3N1K2D SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXP3N1KD |
Виробник: BRIDGELUX
BXP3N1KD SMD N channel transistors
BXP3N1KD SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXP3N1KF |
Виробник: BRIDGELUX
BXP3N1KF THT N channel transistors
BXP3N1KF THT N channel transistors
на замовлення 807 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 88.73 грн |
39+ | 28.05 грн |
106+ | 26.48 грн |
BXP3N50D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
товару немає в наявності
В кошику
од. на суму грн.
BXP3N50D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; Idm: 12A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Power dissipation: 50W
Gate charge: 9nC
Pulsed drain current: 12A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP4N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1316 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.01 грн |
16+ | 24.45 грн |
25+ | 21.84 грн |
72+ | 12.64 грн |
197+ | 11.95 грн |
BXP4N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1316 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
8+ | 39.61 грн |
10+ | 30.46 грн |
25+ | 26.21 грн |
72+ | 15.17 грн |
197+ | 14.35 грн |
BXP4N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.76 грн |
21+ | 18.32 грн |
25+ | 16.40 грн |
95+ | 9.50 грн |
262+ | 8.97 грн |
BXP4N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 10000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 29.71 грн |
13+ | 22.82 грн |
25+ | 19.68 грн |
95+ | 11.40 грн |
262+ | 10.76 грн |
BXP4N65F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1844 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.41 грн |
20+ | 19.31 грн |
50+ | 17.24 грн |
81+ | 11.19 грн |
222+ | 10.58 грн |
1000+ | 10.35 грн |
BXP4N65F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1844 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 31.69 грн |
12+ | 24.07 грн |
50+ | 20.69 грн |
81+ | 13.43 грн |
222+ | 12.69 грн |
1000+ | 12.41 грн |
2500+ | 12.23 грн |
BXP4N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1707 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.63 грн |
26+ | 14.79 грн |
30+ | 13.18 грн |
75+ | 11.04 грн |
106+ | 8.58 грн |
290+ | 8.12 грн |
975+ | 7.89 грн |
BXP4N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1707 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 24.76 грн |
16+ | 18.43 грн |
25+ | 15.82 грн |
75+ | 13.24 грн |
106+ | 10.30 грн |
290+ | 9.75 грн |
975+ | 9.47 грн |
BXP4N80D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXP4N80D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXP4N80F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXP4N80F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.