Продукція > CENTRAL SEMICONDUCTOR CORP > Всі товари виробника CENTRAL SEMICONDUCTOR CORP (8048) > Сторінка 107 з 135
| Фото | Назва | Виробник | Інформація |
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| CBRHD-10 BK PBFREE | Central Semiconductor Corp |
Description: BRIDGE RECT 1P 1KV 500MA 4HD DIPCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Average Rectified (Io): 500 mA Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: 4-HD DIP Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Box |
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CBRHD-04 BK PBFREE | Central Semiconductor Corp |
Description: BRIDGE RECT 1P 400V 500MA HD DIPCurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Average Rectified (Io): 500 mA Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: 4-HD DIP Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Box |
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CBRHD-02 BK PBFREE | Central Semiconductor Corp |
Description: BRIDGE RECT 1P 200V 500MA HD DIPCurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Average Rectified (Io): 500 mA Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: 4-HD DIP Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: CAN |
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CBRHD-01 BK PBFREE | Central Semiconductor Corp |
Description: BRIDGE RECT 1P 100V 0.5A 4HD DIPPackaging: Box Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 4-HD DIP Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
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| CBRHDSH1-200 BK | Central Semiconductor Corp |
Description: SMT RECTIFIER SCHOTTKYPackaging: Box Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -50°C ~ 125°C (TJ) Technology: Schottky Supplier Device Package: 4-HD DIP Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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| 1N4246 TR | Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Last Time Buy Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: GPR-1A Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: R-1, Axial Packaging: Tape & Box (TB) |
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| 1N4246 BK | Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Last Time Buy Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: GPR-1A Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: R-1, Axial Packaging: Bulk |
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| 1N5060 BK | Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: GPR-1A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 300 µA @ 400 V |
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| 1N5616 TR | Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Tape & Box (TB) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 35pF @ 12V, 130kHz Current - Average Rectified (Io): 1A Supplier Device Package: GPR-1A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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| 1N5616 BK | Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 35pF @ 12V, 130kHz Current - Average Rectified (Io): 1A Supplier Device Package: GPR-1A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
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| CMWSH-4 BK | Central Semiconductor Corp |
Description: TRANSISTORCurrent - Reverse Leakage @ Vr: 5 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-343 Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 2 Independent Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Bulk |
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| CMWSH-4 TR | Central Semiconductor Corp |
Description: TRANSISTORCurrent - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 2 Independent Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-343 |
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TIP33B | Central Semiconductor Corp |
Description: TRANS NPN 80V 10A TO-218Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 80 W |
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TIP36B | Central Semiconductor Corp |
Description: TRANS PNP 80V 25A TO-218Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 125 W |
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| CZT3904 BK PBFREE | Central Semiconductor Corp |
Description: TRANS NPN 40V 0.2A SOT223Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 2 W |
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CMJD1500 TR | Central Semiconductor Corp |
Description: 100V,1.5MA SURFACE MOUNT DIODE-CPackaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Supplier Device Package: DFN123F Part Status: Active Power - Max: 780mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.72mA Voltage - Limiting (Max): 2V |
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CMJD1500 TR | Central Semiconductor Corp |
Description: 100V,1.5MA SURFACE MOUNT DIODE-CVoltage - Limiting (Max): 2V Regulator Current (Max): 1.72mA Voltage - Anode - Cathode (Vak)(Max): 100V Part Status: Active Supplier Device Package: DFN123F Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Cut Tape (CT) Power - Max: 780mW |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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CMJDH180 TR | Central Semiconductor Corp |
Description: 50V,18MA SURFACE MOUNT DIODE-CUR Voltage - Limiting (Max): 4.6V Regulator Current (Max): 20mA Voltage - Anode - Cathode (Vak)(Max): 50V Power - Max: 580mW Part Status: Active Supplier Device Package: DFN123F Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CMJDH180 TR | Central Semiconductor Corp |
Description: 50V,18MA SURFACE MOUNT DIODE-CUR Voltage - Limiting (Max): 4.6V Regulator Current (Max): 20mA Voltage - Anode - Cathode (Vak)(Max): 50V Power - Max: 580mW Part Status: Active Supplier Device Package: DFN123F Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CMNT3906E TR PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 40V 0.2A SOT953Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-953 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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CMNT3906E TR PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 40V 0.2A SOT953Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: SOT-953 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-953 Packaging: Cut Tape (CT) |
на замовлення 15833 шт: термін постачання 21-31 дні (днів) |
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| CPZ58X-BZX55C3V3-CT | Central Semiconductor Corp |
Description: DIODE ZENER Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Part Status: Active Supplier Device Package: Die Impedance (Max) (Zzt): 85 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Tolerance: ±6% Packaging: Bulk |
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| CPZ58X-BZX55C3V3-CM | Central Semiconductor Corp |
Description: DIODE ZENER Mounting Type: Surface Mount Package / Case: Die Tolerance: ±6% Packaging: Bulk Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Part Status: Active Supplier Device Package: Die Impedance (Max) (Zzt): 85 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 150°C (TJ) |
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| CPZ58X-BZX55C3V3-WN | Central Semiconductor Corp |
Description: DIODE ZENER Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Part Status: Active Supplier Device Package: Die Impedance (Max) (Zzt): 85 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Tolerance: ±6% Packaging: Bulk |
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2N6486 TIN/LEAD | Central Semiconductor Corp |
Description: TRANS NPN 40V 15A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V Frequency - Transition: 5MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.8 W |
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CBR1-D100 PBFREE | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 1KV 1A 4DIPCurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: 4-DIP Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-EDIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
| 1N5062 TR | Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Tape & Box (TB) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: GPR-1A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 800 V |
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| 1N5062 BK | Central Semiconductor Corp |
Description: DIODE GENERAL PURPOSE TH Packaging: Bulk Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: GPR-1A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 800 V |
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CMDZ2L0 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 2V 250MW SOD323Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2 V Impedance (Max) (Zzt): 1100 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CMDZ2L0 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 2V 250MW SOD323Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2 V Impedance (Max) (Zzt): 1100 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
на замовлення 5918 шт: термін постачання 21-31 дні (днів) |
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CMOZ2L0 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 2V 250MW SOD523Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2 V Impedance (Max) (Zzt): 1400 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
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CMOZ2L0 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 2V 250MW SOD523Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2 V Impedance (Max) (Zzt): 1400 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
на замовлення 2540 шт: термін постачання 21-31 дні (днів) |
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CZ5352B TR | Central Semiconductor Corp |
Description: TRANSISTORTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: DO-201 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V |
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| 1N5188 TR | Central Semiconductor Corp |
Description: DIODE FAST RECOVERY TH Packaging: Tape & Box (TB) Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 400 V |
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| 1N5188 BK | Central Semiconductor Corp |
Description: DIODE FAST RECOVERY TH Packaging: Bulk Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 400 V |
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| 1N5189 TR | Central Semiconductor Corp |
Description: DIODE FAST RECOVERY TH Packaging: Tape & Box (TB) Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 500 V |
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| 1N5189 BK | Central Semiconductor Corp |
Description: DIODE FAST RECOVERY TH Packaging: Bulk Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 500 V |
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2N6433 PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 300V 0.1A TO18Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.8 W |
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2N6432 PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 200V 0.1A TO18Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.8 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6430 PBFREE | Central Semiconductor Corp |
Description: TRANS NPN 200V 0.1A TO18Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.8 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N6431 PBFREE | Central Semiconductor Corp |
Description: TRANS NPN 300V 0.1A TO18Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.8 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| CP692-MPS4992-WN | Central Semiconductor Corp |
Description: IC TRANSISTOR NPN BIDIRECTPackaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CMEDA-6I BK | Central Semiconductor Corp |
Description: TRANSISTORCurrent - Reverse Leakage @ Vr: 25 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-28 Current - Average Rectified (Io) (per Diode): 250mA (DC) Diode Configuration: 4 Independent Technology: Standard Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOT-28 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CMEDA-6I TR | Central Semiconductor Corp |
Description: TRANSISTORCurrent - Reverse Leakage @ Vr: 25 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOT-28 Current - Average Rectified (Io) (per Diode): 250mA (DC) Diode Configuration: 4 Independent Technology: Standard Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOT-28 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CMR3U-01M TR13 PBFREE | Central Semiconductor Corp |
Description: DIODE STANDARD 100V 3A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CMR1U-01M BK PBFREE | Central Semiconductor Corp |
Description: DIODE GEN PURP 100V 1A SMAPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CMR1U-01M TR13 TIN/LEAD | Central Semiconductor Corp |
Description: DIODE GEN PURP 100V 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CMR1-01M TR13 | Central Semiconductor Corp |
Description: DIODE GEN PURP 100V 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CMR1-01M BK | Central Semiconductor Corp |
Description: DIODE GEN PURP 100V 1A SMAPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BCY79-X PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 45V 0.1A TO-18Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-18 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 2.5mA, 100mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CCLM3500 BK | Central Semiconductor Corp |
Description: IC CURRENT REGULATOR SOD80Supplier Device Package: SOD-80 Operating Temperature: -65°C ~ 200°C (TJ) Current - Output: 4.1mA Voltage - Input: 100V Function: Current Regulator Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CCLM3500 TR | Central Semiconductor Corp |
Description: IC CURRENT REGULATOR SOD80Supplier Device Package: SOD-80 Operating Temperature: -65°C ~ 200°C (TJ) Current - Output: 4.1mA Voltage - Input: 100V Function: Current Regulator Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| CZT2222A BK PBFREE | Central Semiconductor Corp |
Description: TRANS NPN 40V 0.6A SOT223Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2N5460 | Central Semiconductor Corp |
Description: JFET P-CH 40V TO92-3Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA Power - Max: 310 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V FET Type: P-Channel Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2N3819 | Central Semiconductor Corp |
Description: RF MOSFET JFET 25V TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Configuration: N-Channel Technology: JFET Supplier Device Package: TO-92-3 Voltage - Rated: 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CMZ5949B TR13 | Central Semiconductor Corp |
Description: DIODE ZENER 100V 500MW SMACurrent - Reverse Leakage @ Vr: 1 µA @ 76 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Supplier Device Package: SMA Impedance (Max) (Zzt): 250 Ohms Voltage - Zener (Nom) (Vz): 100 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CMZ5949B TR13 | Central Semiconductor Corp |
Description: DIODE ZENER 100V 500MW SMASupplier Device Package: SMA Impedance (Max) (Zzt): 250 Ohms Voltage - Zener (Nom) (Vz): 100 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 76 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW |
на замовлення 9955 шт: термін постачання 21-31 дні (днів) |
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CMZ5951B TR13 | Central Semiconductor Corp |
Description: DIODE ZENER 120V 500MW SMACurrent - Reverse Leakage @ Vr: 1 µA @ 91.2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Supplier Device Package: SMA Impedance (Max) (Zzt): 360 Ohms Voltage - Zener (Nom) (Vz): 120 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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CMZ5951B TR13 | Central Semiconductor Corp |
Description: DIODE ZENER 120V 500MW SMACurrent - Reverse Leakage @ Vr: 1 µA @ 91.2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Supplier Device Package: SMA Impedance (Max) (Zzt): 360 Ohms Voltage - Zener (Nom) (Vz): 120 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 11861 шт: термін постачання 21-31 дні (днів) |
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CMZ5935B TR13 TIN/LEAD | Central Semiconductor Corp |
Description: DIODE ZENER 27V 500MW SMATolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: SMA Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V |
товару немає в наявності |
В кошику од. на суму грн. |
| CBRHD-10 BK PBFREE |
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Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 1KV 500MA 4HD DIP
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Average Rectified (Io): 500 mA
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: 4-HD DIP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Description: BRIDGE RECT 1P 1KV 500MA 4HD DIP
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Average Rectified (Io): 500 mA
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: 4-HD DIP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Box
товару немає в наявності
В кошику
од. на суму грн.
| CBRHD-04 BK PBFREE |
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Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 400V 500MA HD DIP
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Average Rectified (Io): 500 mA
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: 4-HD DIP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Box
Description: BRIDGE RECT 1P 400V 500MA HD DIP
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Average Rectified (Io): 500 mA
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: 4-HD DIP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Box
товару немає в наявності
В кошику
од. на суму грн.
| CBRHD-02 BK PBFREE |
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Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 200V 500MA HD DIP
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Average Rectified (Io): 500 mA
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: 4-HD DIP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: CAN
Description: BRIDGE RECT 1P 200V 500MA HD DIP
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Average Rectified (Io): 500 mA
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: 4-HD DIP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: CAN
товару немає в наявності
В кошику
од. на суму грн.
| CBRHD-01 BK PBFREE |
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Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 100V 0.5A 4HD DIP
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1P 100V 0.5A 4HD DIP
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| CBRHDSH1-200 BK |
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Виробник: Central Semiconductor Corp
Description: SMT RECTIFIER SCHOTTKY
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-HD DIP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: SMT RECTIFIER SCHOTTKY
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-HD DIP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4246 TR |
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: GPR-1A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-1, Axial
Packaging: Tape & Box (TB)
Description: DIODE GENERAL PURPOSE TH
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: GPR-1A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-1, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
од. на суму грн.
| 1N4246 BK |
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: GPR-1A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-1, Axial
Packaging: Bulk
Description: DIODE GENERAL PURPOSE TH
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: GPR-1A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-1, Axial
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 1N5060 BK |
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 400 V
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5616 TR |
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 130kHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 130kHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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| 1N5616 BK |
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 130kHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 130kHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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| CMWSH-4 BK |
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Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-343
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Description: TRANSISTOR
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-343
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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| CMWSH-4 TR |
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Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-343
Description: TRANSISTOR
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 2 Independent
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-343
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| TIP33B |
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Виробник: Central Semiconductor Corp
Description: TRANS NPN 80V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
Description: TRANS NPN 80V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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| TIP36B |
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Виробник: Central Semiconductor Corp
Description: TRANS PNP 80V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
Description: TRANS PNP 80V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
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| CZT3904 BK PBFREE |
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Виробник: Central Semiconductor Corp
Description: TRANS NPN 40V 0.2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Description: TRANS NPN 40V 0.2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
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| CMJD1500 TR |
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Виробник: Central Semiconductor Corp
Description: 100V,1.5MA SURFACE MOUNT DIODE-C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 780mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.72mA
Voltage - Limiting (Max): 2V
Description: 100V,1.5MA SURFACE MOUNT DIODE-C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 780mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.72mA
Voltage - Limiting (Max): 2V
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| CMJD1500 TR |
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Виробник: Central Semiconductor Corp
Description: 100V,1.5MA SURFACE MOUNT DIODE-C
Voltage - Limiting (Max): 2V
Regulator Current (Max): 1.72mA
Voltage - Anode - Cathode (Vak)(Max): 100V
Part Status: Active
Supplier Device Package: DFN123F
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Power - Max: 780mW
Description: 100V,1.5MA SURFACE MOUNT DIODE-C
Voltage - Limiting (Max): 2V
Regulator Current (Max): 1.72mA
Voltage - Anode - Cathode (Vak)(Max): 100V
Part Status: Active
Supplier Device Package: DFN123F
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Power - Max: 780mW
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.21 грн |
| 10+ | 214.25 грн |
| 100+ | 173.32 грн |
| 500+ | 159.10 грн |
| CMJDH180 TR |
Виробник: Central Semiconductor Corp
Description: 50V,18MA SURFACE MOUNT DIODE-CUR
Voltage - Limiting (Max): 4.6V
Regulator Current (Max): 20mA
Voltage - Anode - Cathode (Vak)(Max): 50V
Power - Max: 580mW
Part Status: Active
Supplier Device Package: DFN123F
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: 50V,18MA SURFACE MOUNT DIODE-CUR
Voltage - Limiting (Max): 4.6V
Regulator Current (Max): 20mA
Voltage - Anode - Cathode (Vak)(Max): 50V
Power - Max: 580mW
Part Status: Active
Supplier Device Package: DFN123F
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 228.83 грн |
| CMJDH180 TR |
Виробник: Central Semiconductor Corp
Description: 50V,18MA SURFACE MOUNT DIODE-CUR
Voltage - Limiting (Max): 4.6V
Regulator Current (Max): 20mA
Voltage - Anode - Cathode (Vak)(Max): 50V
Power - Max: 580mW
Part Status: Active
Supplier Device Package: DFN123F
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Description: 50V,18MA SURFACE MOUNT DIODE-CUR
Voltage - Limiting (Max): 4.6V
Regulator Current (Max): 20mA
Voltage - Anode - Cathode (Vak)(Max): 50V
Power - Max: 580mW
Part Status: Active
Supplier Device Package: DFN123F
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 420.11 грн |
| 10+ | 363.65 грн |
| 100+ | 297.92 грн |
| 500+ | 238.01 грн |
| 1000+ | 206.80 грн |
| CMNT3906E TR PBFREE |
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Виробник: Central Semiconductor Corp
Description: TRANS PNP 40V 0.2A SOT953
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-953
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 0.2A SOT953
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-953
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 12.12 грн |
| CMNT3906E TR PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANS PNP 40V 0.2A SOT953
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-953
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
Description: TRANS PNP 40V 0.2A SOT953
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-953
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
на замовлення 15833 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.20 грн |
| 11+ | 29.31 грн |
| 100+ | 21.90 грн |
| 500+ | 16.15 грн |
| 1000+ | 12.48 грн |
| 2000+ | 11.38 грн |
| CPZ58X-BZX55C3V3-CT |
Виробник: Central Semiconductor Corp
Description: DIODE ZENER
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Part Status: Active
Supplier Device Package: Die
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±6%
Packaging: Bulk
Description: DIODE ZENER
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Part Status: Active
Supplier Device Package: Die
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±6%
Packaging: Bulk
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| CPZ58X-BZX55C3V3-CM |
Виробник: Central Semiconductor Corp
Description: DIODE ZENER
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±6%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Part Status: Active
Supplier Device Package: Die
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Description: DIODE ZENER
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±6%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Part Status: Active
Supplier Device Package: Die
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
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| CPZ58X-BZX55C3V3-WN |
Виробник: Central Semiconductor Corp
Description: DIODE ZENER
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Part Status: Active
Supplier Device Package: Die
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±6%
Packaging: Bulk
Description: DIODE ZENER
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Part Status: Active
Supplier Device Package: Die
Impedance (Max) (Zzt): 85 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Tolerance: ±6%
Packaging: Bulk
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| 2N6486 TIN/LEAD |
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Виробник: Central Semiconductor Corp
Description: TRANS NPN 40V 15A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Description: TRANS NPN 40V 15A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
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| CBR1-D100 PBFREE |
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Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 1KV 1A 4DIP
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: 4-DIP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Packaging: Tube
Description: BRIDGE RECT 1PHASE 1KV 1A 4DIP
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: 4-DIP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 1N5062 TR |
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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| 1N5062 BK |
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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| CMDZ2L0 TR PBFREE |
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Виробник: Central Semiconductor Corp
Description: DIODE ZENER 2V 250MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 2V 250MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.19 грн |
| CMDZ2L0 TR PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 2V 250MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 2V 250MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 5918 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.38 грн |
| 10+ | 37.07 грн |
| 100+ | 25.79 грн |
| 500+ | 18.90 грн |
| 1000+ | 15.36 грн |
| CMOZ2L0 TR PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 2V 250MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 2V 250MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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| CMOZ2L0 TR PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 2V 250MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 2V 250MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 2540 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.38 грн |
| 10+ | 38.42 грн |
| 100+ | 29.45 грн |
| 500+ | 21.85 грн |
| 1000+ | 17.48 грн |
| CZ5352B TR |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-201
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
Description: TRANSISTOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-201
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
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| 1N5188 TR |
Виробник: Central Semiconductor Corp
Description: DIODE FAST RECOVERY TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Description: DIODE FAST RECOVERY TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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| 1N5188 BK |
Виробник: Central Semiconductor Corp
Description: DIODE FAST RECOVERY TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Description: DIODE FAST RECOVERY TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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| 1N5189 TR |
Виробник: Central Semiconductor Corp
Description: DIODE FAST RECOVERY TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Description: DIODE FAST RECOVERY TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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| 1N5189 BK |
Виробник: Central Semiconductor Corp
Description: DIODE FAST RECOVERY TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Description: DIODE FAST RECOVERY TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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| 2N6433 PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANS PNP 300V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.8 W
Description: TRANS PNP 300V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.8 W
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| 2N6432 PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANS PNP 200V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.8 W
Description: TRANS PNP 200V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.8 W
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| 2N6430 PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANS NPN 200V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.8 W
Description: TRANS NPN 200V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.8 W
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| 2N6431 PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANS NPN 300V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.8 W
Description: TRANS NPN 300V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.8 W
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| CP692-MPS4992-WN |
![]() |
Виробник: Central Semiconductor Corp
Description: IC TRANSISTOR NPN BIDIRECT
Packaging: Bulk
Part Status: Obsolete
Description: IC TRANSISTOR NPN BIDIRECT
Packaging: Bulk
Part Status: Obsolete
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| CMEDA-6I BK |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Current - Reverse Leakage @ Vr: 25 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-28
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Diode Configuration: 4 Independent
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-28
Packaging: Bulk
Description: TRANSISTOR
Current - Reverse Leakage @ Vr: 25 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-28
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Diode Configuration: 4 Independent
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-28
Packaging: Bulk
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| CMEDA-6I TR |
![]() |
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Current - Reverse Leakage @ Vr: 25 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-28
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Diode Configuration: 4 Independent
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-28
Packaging: Tape & Reel (TR)
Description: TRANSISTOR
Current - Reverse Leakage @ Vr: 25 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-28
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Diode Configuration: 4 Independent
Technology: Standard
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-28
Packaging: Tape & Reel (TR)
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| CMR3U-01M TR13 PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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| CMR1U-01M BK PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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| CMR1U-01M TR13 TIN/LEAD |
![]() |
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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| CMR1-01M TR13 |
![]() |
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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| CMR1-01M BK |
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Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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| BCY79-X PBFREE |
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Виробник: Central Semiconductor Corp
Description: TRANS PNP 45V 0.1A TO-18
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Description: TRANS PNP 45V 0.1A TO-18
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-18
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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| CCLM3500 BK |
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Виробник: Central Semiconductor Corp
Description: IC CURRENT REGULATOR SOD80
Supplier Device Package: SOD-80
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Output: 4.1mA
Voltage - Input: 100V
Function: Current Regulator
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Bulk
Description: IC CURRENT REGULATOR SOD80
Supplier Device Package: SOD-80
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Output: 4.1mA
Voltage - Input: 100V
Function: Current Regulator
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Bulk
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| CCLM3500 TR |
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Виробник: Central Semiconductor Corp
Description: IC CURRENT REGULATOR SOD80
Supplier Device Package: SOD-80
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Output: 4.1mA
Voltage - Input: 100V
Function: Current Regulator
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
Description: IC CURRENT REGULATOR SOD80
Supplier Device Package: SOD-80
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Output: 4.1mA
Voltage - Input: 100V
Function: Current Regulator
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Tape & Reel (TR)
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| CZT2222A BK PBFREE |
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Виробник: Central Semiconductor Corp
Description: TRANS NPN 40V 0.6A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
Description: TRANS NPN 40V 0.6A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
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| 2N5460 |
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Виробник: Central Semiconductor Corp
Description: JFET P-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Power - Max: 310 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: JFET P-CH 40V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
Power - Max: 310 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
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| 2N3819 |
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Виробник: Central Semiconductor Corp
Description: RF MOSFET JFET 25V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 25 V
Description: RF MOSFET JFET 25V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Voltage - Rated: 25 V
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| CMZ5949B TR13 |
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Виробник: Central Semiconductor Corp
Description: DIODE ZENER 100V 500MW SMA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SMA
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 100 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 100V 500MW SMA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SMA
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 100 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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| CMZ5949B TR13 |
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Виробник: Central Semiconductor Corp
Description: DIODE ZENER 100V 500MW SMA
Supplier Device Package: SMA
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 100 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Description: DIODE ZENER 100V 500MW SMA
Supplier Device Package: SMA
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 100 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
на замовлення 9955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.95 грн |
| 13+ | 23.96 грн |
| 100+ | 16.65 грн |
| 500+ | 12.20 грн |
| 1000+ | 9.92 грн |
| 2000+ | 8.86 грн |
| CMZ5951B TR13 |
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Виробник: Central Semiconductor Corp
Description: DIODE ZENER 120V 500MW SMA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SMA
Impedance (Max) (Zzt): 360 Ohms
Voltage - Zener (Nom) (Vz): 120 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 120V 500MW SMA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SMA
Impedance (Max) (Zzt): 360 Ohms
Voltage - Zener (Nom) (Vz): 120 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 23.74 грн |
| 10000+ | 21.17 грн |
| CMZ5951B TR13 |
![]() |
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 120V 500MW SMA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SMA
Impedance (Max) (Zzt): 360 Ohms
Voltage - Zener (Nom) (Vz): 120 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 120V 500MW SMA
Current - Reverse Leakage @ Vr: 1 µA @ 91.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SMA
Impedance (Max) (Zzt): 360 Ohms
Voltage - Zener (Nom) (Vz): 120 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 11861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.72 грн |
| 10+ | 55.00 грн |
| 100+ | 38.10 грн |
| 500+ | 29.88 грн |
| 1000+ | 25.43 грн |
| 2000+ | 22.65 грн |
| CMZ5935B TR13 TIN/LEAD |
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Виробник: Central Semiconductor Corp
Description: DIODE ZENER 27V 500MW SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SMA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
Description: DIODE ZENER 27V 500MW SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SMA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
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