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CZTA27 TR PBFREE CZTA27 TR PBFREE Central Semiconductor Corp CZTA27.PDF Description: TRANS NPN DARL 60V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 2759 шт:
термін постачання 21-31 дні (днів)
6+60.55 грн
10+51.45 грн
100+39.42 грн
500+29.25 грн
Мінімальне замовлення: 6
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CQ92D CQ92D Central Semiconductor Corp CQ92x.pdf Description: TRIAC 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 400 V
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CQ92D APM CQ92D APM Central Semiconductor Corp CQ92x.pdf Description: TRIAC 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 400 V
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CQ92DT CQ92DT Central Semiconductor Corp CQ92xT.pdf Description: TRIAC 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 400 V
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TIP112M SL Central Semiconductor Corp TIP112_6-2-22.PDF Description: TRANSISTOR
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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TIP112 SL Central Semiconductor Corp TIP112_6-2-22.PDF Description: TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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1N4944 TR Central Semiconductor Corp 1N4942-48.PDF Description: DIODE GEN PURP 400V 1A GPR-1A
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N4944 BK Central Semiconductor Corp 1N4942-48.PDF Description: DIODE GEN PURP 400V 1A GPR-1A
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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CBRHDSH1-200 TR13 CBRHDSH1-200 TR13 Central Semiconductor Corp CBRHDSH1-200.PDF Description: BRIDGE RECT 1P 200V 1A 4HD DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-HD DIP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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CBRHDSH1-200 TR13 CBRHDSH1-200 TR13 Central Semiconductor Corp CBRHDSH1-200.PDF Description: BRIDGE RECT 1P 200V 1A 4HD DIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-HD DIP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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CBRHD-10 BK PBFREE Central Semiconductor Corp CBRHD.PDF Description: BRIDGE RECT 1P 1KV 500MA 4HD DIP
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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CBRHD-04 BK PBFREE CBRHD-04 BK PBFREE Central Semiconductor Corp CBRHD.PDF Description: BRIDGE RECT 1P 400V 500MA HD DIP
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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CBRHD-02 BK PBFREE CBRHD-02 BK PBFREE Central Semiconductor Corp CBRHD.PDF Description: BRIDGE RECT 1P 200V 500MA HD DIP
Packaging: CAN
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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CBRHD-01 BK PBFREE CBRHD-01 BK PBFREE Central Semiconductor Corp CBRHD-01.PDF Description: BRIDGE RECT 1P 100V 0.5A 4HD DIP
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CBRHDSH1-200 BK Central Semiconductor Corp CBRHDSH1-200.pdf Description: SMT RECTIFIER SCHOTTKY
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-HD DIP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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1N4246 TR Central Semiconductor Corp Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N4246 BK Central Semiconductor Corp Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N5060 BK Central Semiconductor Corp Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 400 V
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1N5616 TR Central Semiconductor Corp Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 130kHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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1N5616 BK Central Semiconductor Corp Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 130kHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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CMWSH-4 BK Central Semiconductor Corp CMWSH-4_11-14-02.PDF Description: TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-343
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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CMWSH-4 TR Central Semiconductor Corp CMWSH-4_11-14-02.PDF Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-343
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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TIP33B TIP33B Central Semiconductor Corp LSSGP091.PDF Description: TRANS NPN 80V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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TIP36B Central Semiconductor Corp TIP35.PDF Description: TRANS PNP 80V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
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CZT3904 BK PBFREE Central Semiconductor Corp CZT3904-06.PDF Description: TRANS NPN 40V 0.2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
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CMJD1500 TR CMJD1500 TR Central Semiconductor Corp CMJD0130-CMJD5750.PDF Description: 100V,1.5MA SURFACE MOUNT DIODE-C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 780mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.72mA
Voltage - Limiting (Max): 2V
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CMJD1500 TR CMJD1500 TR Central Semiconductor Corp CMJD0130-CMJD5750.PDF Description: 100V,1.5MA SURFACE MOUNT DIODE-C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 780mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.72mA
Voltage - Limiting (Max): 2V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
2+277.38 грн
10+224.09 грн
100+181.28 грн
500+166.40 грн
Мінімальне замовлення: 2
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CMJDH180 TR CMJDH180 TR Central Semiconductor Corp Description: 50V,18MA SURFACE MOUNT DIODE-CUR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 20mA
Voltage - Limiting (Max): 4.6V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+239.34 грн
Мінімальне замовлення: 3000
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CMJDH180 TR CMJDH180 TR Central Semiconductor Corp Description: 50V,18MA SURFACE MOUNT DIODE-CUR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 20mA
Voltage - Limiting (Max): 4.6V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+439.40 грн
10+380.34 грн
100+311.60 грн
500+248.93 грн
1000+216.29 грн
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CMNT3906E TR PBFREE CMNT3906E TR PBFREE Central Semiconductor Corp CMNT3904E_06E.PDF Description: TRANS PNP 40V 0.2A SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-953
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+12.68 грн
Мінімальне замовлення: 8000
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CMNT3906E TR PBFREE CMNT3906E TR PBFREE Central Semiconductor Corp CMNT3904E_06E.PDF Description: TRANS PNP 40V 0.2A SOT953
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-953
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 15833 шт:
термін постачання 21-31 дні (днів)
9+36.82 грн
11+30.65 грн
100+22.91 грн
500+16.89 грн
1000+13.05 грн
2000+11.90 грн
Мінімальне замовлення: 9
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CPZ58X-BZX55C3V3-CT Central Semiconductor Corp Description: DIODE ZENER
Tolerance: ±6%
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Die
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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CPZ58X-BZX55C3V3-CM Central Semiconductor Corp Description: DIODE ZENER
Tolerance: ±6%
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Die
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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CPZ58X-BZX55C3V3-WN Central Semiconductor Corp Description: DIODE ZENER
Tolerance: ±6%
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Die
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
товару немає в наявності
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2N6486 TIN/LEAD 2N6486 TIN/LEAD Central Semiconductor Corp 2N6486-6491.PDF Description: TRANS NPN 40V 15A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
товару немає в наявності
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CBR1-D100 PBFREE CBR1-D100 PBFREE Central Semiconductor Corp CBR1-D010_SERIES.PDF Description: BRIDGE RECT 1PHASE 1KV 1A 4DIP
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
1N5062 TR Central Semiconductor Corp Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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1N5062 BK Central Semiconductor Corp Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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CMDZ2L0 TR PBFREE CMDZ2L0 TR PBFREE Central Semiconductor Corp CMDZ5L1-36L.PDF Description: DIODE ZENER 2V 250MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+15.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMDZ2L0 TR PBFREE CMDZ2L0 TR PBFREE Central Semiconductor Corp CMDZ5L1-36L.PDF Description: DIODE ZENER 2V 250MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 5918 шт:
термін постачання 21-31 дні (днів)
7+47.46 грн
10+38.77 грн
100+26.97 грн
500+19.76 грн
1000+16.06 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CMOZ2L0 TR PBFREE CMOZ2L0 TR PBFREE Central Semiconductor Corp CMOZ2L4_SERIES.PDF Description: DIODE ZENER 2V 250MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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CMOZ2L0 TR PBFREE CMOZ2L0 TR PBFREE Central Semiconductor Corp CMOZ2L4_SERIES.PDF Description: DIODE ZENER 2V 250MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 2540 шт:
термін постачання 21-31 дні (днів)
7+47.46 грн
10+40.18 грн
100+30.80 грн
500+22.85 грн
1000+18.28 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CZ5352B TR CZ5352B TR Central Semiconductor Corp CZ5333B_SERIES.PDF Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-201
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
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1N5188 TR Central Semiconductor Corp Description: DIODE FAST RECOVERY TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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1N5188 BK Central Semiconductor Corp Description: DIODE FAST RECOVERY TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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1N5189 TR Central Semiconductor Corp Description: DIODE FAST RECOVERY TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5189 BK Central Semiconductor Corp Description: DIODE FAST RECOVERY TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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2N6433 PBFREE 2N6433 PBFREE Central Semiconductor Corp 2N6430-6433.PDF Description: TRANS PNP 300V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.8 W
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2N6432 PBFREE 2N6432 PBFREE Central Semiconductor Corp 2N6430-6433.PDF Description: TRANS PNP 200V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.8 W
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2N6430 PBFREE 2N6430 PBFREE Central Semiconductor Corp 2N6430-6433.PDF Description: TRANS NPN 200V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.8 W
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2N6431 PBFREE 2N6431 PBFREE Central Semiconductor Corp 2N6430-6433.PDF Description: TRANS NPN 300V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.8 W
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CP692-MPS4992-WN Central Semiconductor Corp CP692-MPS4992.pdf Description: IC TRANSISTOR NPN BIDIRECT
Packaging: Bulk
Part Status: Obsolete
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CMEDA-6I BK Central Semiconductor Corp CMEDA-6I.PDF Description: TRANSISTOR
Packaging: Bulk
Package / Case: SOT-28
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Diode Configuration: 4 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-28
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 50 V
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CMEDA-6I TR Central Semiconductor Corp CMEDA-6I.PDF Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SOT-28
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Diode Configuration: 4 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-28
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 50 V
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CMR3U-01M TR13 PBFREE CMR3U-01M TR13 PBFREE Central Semiconductor Corp CMR3U-01M-10M.PDF Description: DIODE STANDARD 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CMR1U-01M BK PBFREE CMR1U-01M BK PBFREE Central Semiconductor Corp CMR1U01M.PDF Description: DIODE GEN PURP 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CMR1U-01M TR13 TIN/LEAD CMR1U-01M TR13 TIN/LEAD Central Semiconductor Corp CMR1U01M.PDF Description: DIODE GEN PURP 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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CMR1-01M TR13 CMR1-01M TR13 Central Semiconductor Corp CMR1-005M-01M.PDF Description: DIODE GEN PURP 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CMR1-01M BK CMR1-01M BK Central Semiconductor Corp CMR1-005M-01M.PDF Description: DIODE GEN PURP 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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BCY79-X PBFREE Central Semiconductor Corp BCY78-79.PDF Description: TRANS PNP 45V 0.1A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
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CZTA27 TR PBFREE CZTA27.PDF
CZTA27 TR PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 60V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
на замовлення 2759 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.55 грн
10+51.45 грн
100+39.42 грн
500+29.25 грн
Мінімальне замовлення: 6
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CQ92D CQ92x.pdf
CQ92D
Виробник: Central Semiconductor Corp
Description: TRIAC 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 400 V
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CQ92D APM CQ92x.pdf
CQ92D APM
Виробник: Central Semiconductor Corp
Description: TRIAC 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 400 V
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CQ92DT CQ92xT.pdf
CQ92DT
Виробник: Central Semiconductor Corp
Description: TRIAC 2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 400 V
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TIP112M SL TIP112_6-2-22.PDF
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Bulk
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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TIP112 SL TIP112_6-2-22.PDF
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 50 W
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1N4944 TR 1N4942-48.PDF
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 400V 1A GPR-1A
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N4944 BK 1N4942-48.PDF
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 400V 1A GPR-1A
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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CBRHDSH1-200 TR13 CBRHDSH1-200.PDF
CBRHDSH1-200 TR13
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 200V 1A 4HD DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-HD DIP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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CBRHDSH1-200 TR13 CBRHDSH1-200.PDF
CBRHDSH1-200 TR13
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 200V 1A 4HD DIP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-HD DIP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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CBRHD-10 BK PBFREE CBRHD.PDF
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 1KV 500MA 4HD DIP
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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CBRHD-04 BK PBFREE CBRHD.PDF
CBRHD-04 BK PBFREE
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 400V 500MA HD DIP
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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CBRHD-02 BK PBFREE CBRHD.PDF
CBRHD-02 BK PBFREE
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 200V 500MA HD DIP
Packaging: CAN
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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CBRHD-01 BK PBFREE CBRHD-01.PDF
CBRHD-01 BK PBFREE
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 100V 0.5A 4HD DIP
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-HD DIP
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CBRHDSH1-200 BK CBRHDSH1-200.pdf
Виробник: Central Semiconductor Corp
Description: SMT RECTIFIER SCHOTTKY
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-HD DIP
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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1N4246 TR
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N4246 BK
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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1N5060 BK
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 400 V
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1N5616 TR
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 130kHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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1N5616 BK
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 130kHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
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CMWSH-4 BK CMWSH-4_11-14-02.PDF
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-343
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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CMWSH-4 TR CMWSH-4_11-14-02.PDF
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-343
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
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TIP33B LSSGP091.PDF
TIP33B
Виробник: Central Semiconductor Corp
Description: TRANS NPN 80V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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TIP36B TIP35.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 80V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
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CZT3904 BK PBFREE CZT3904-06.PDF
Виробник: Central Semiconductor Corp
Description: TRANS NPN 40V 0.2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
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CMJD1500 TR CMJD0130-CMJD5750.PDF
CMJD1500 TR
Виробник: Central Semiconductor Corp
Description: 100V,1.5MA SURFACE MOUNT DIODE-C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 780mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.72mA
Voltage - Limiting (Max): 2V
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CMJD1500 TR CMJD0130-CMJD5750.PDF
CMJD1500 TR
Виробник: Central Semiconductor Corp
Description: 100V,1.5MA SURFACE MOUNT DIODE-C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 780mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.72mA
Voltage - Limiting (Max): 2V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+277.38 грн
10+224.09 грн
100+181.28 грн
500+166.40 грн
Мінімальне замовлення: 2
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CMJDH180 TR
CMJDH180 TR
Виробник: Central Semiconductor Corp
Description: 50V,18MA SURFACE MOUNT DIODE-CUR
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 20mA
Voltage - Limiting (Max): 4.6V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+239.34 грн
Мінімальне замовлення: 3000
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CMJDH180 TR
CMJDH180 TR
Виробник: Central Semiconductor Corp
Description: 50V,18MA SURFACE MOUNT DIODE-CUR
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Supplier Device Package: DFN123F
Part Status: Active
Power - Max: 580mW
Voltage - Anode - Cathode (Vak)(Max): 50V
Regulator Current (Max): 20mA
Voltage - Limiting (Max): 4.6V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+439.40 грн
10+380.34 грн
100+311.60 грн
500+248.93 грн
1000+216.29 грн
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CMNT3906E TR PBFREE CMNT3904E_06E.PDF
CMNT3906E TR PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS PNP 40V 0.2A SOT953
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-953
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+12.68 грн
Мінімальне замовлення: 8000
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CMNT3906E TR PBFREE CMNT3904E_06E.PDF
CMNT3906E TR PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS PNP 40V 0.2A SOT953
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-953
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
на замовлення 15833 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+36.82 грн
11+30.65 грн
100+22.91 грн
500+16.89 грн
1000+13.05 грн
2000+11.90 грн
Мінімальне замовлення: 9
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CPZ58X-BZX55C3V3-CT
Виробник: Central Semiconductor Corp
Description: DIODE ZENER
Tolerance: ±6%
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Die
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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CPZ58X-BZX55C3V3-CM
Виробник: Central Semiconductor Corp
Description: DIODE ZENER
Tolerance: ±6%
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Die
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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CPZ58X-BZX55C3V3-WN
Виробник: Central Semiconductor Corp
Description: DIODE ZENER
Tolerance: ±6%
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Die
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
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2N6486 TIN/LEAD 2N6486-6491.PDF
2N6486 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TRANS NPN 40V 15A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
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CBR1-D100 PBFREE CBR1-D010_SERIES.PDF
CBR1-D100 PBFREE
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 1KV 1A 4DIP
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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1N5062 TR
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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1N5062 BK
Виробник: Central Semiconductor Corp
Description: DIODE GENERAL PURPOSE TH
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GPR-1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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CMDZ2L0 TR PBFREE CMDZ5L1-36L.PDF
CMDZ2L0 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 2V 250MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+15.89 грн
Мінімальне замовлення: 3000
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CMDZ2L0 TR PBFREE CMDZ5L1-36L.PDF
CMDZ2L0 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 2V 250MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 5918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.46 грн
10+38.77 грн
100+26.97 грн
500+19.76 грн
1000+16.06 грн
Мінімальне замовлення: 7
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CMOZ2L0 TR PBFREE CMOZ2L4_SERIES.PDF
CMOZ2L0 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 2V 250MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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CMOZ2L0 TR PBFREE CMOZ2L4_SERIES.PDF
CMOZ2L0 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 2V 250MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 2540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.46 грн
10+40.18 грн
100+30.80 грн
500+22.85 грн
1000+18.28 грн
Мінімальне замовлення: 7
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CZ5352B TR CZ5333B_SERIES.PDF
CZ5352B TR
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-201
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 11.5 V
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1N5188 TR
Виробник: Central Semiconductor Corp
Description: DIODE FAST RECOVERY TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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1N5188 BK
Виробник: Central Semiconductor Corp
Description: DIODE FAST RECOVERY TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
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1N5189 TR
Виробник: Central Semiconductor Corp
Description: DIODE FAST RECOVERY TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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1N5189 BK
Виробник: Central Semiconductor Corp
Description: DIODE FAST RECOVERY TH
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
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2N6433 PBFREE 2N6430-6433.PDF
2N6433 PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS PNP 300V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.8 W
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2N6432 PBFREE 2N6430-6433.PDF
2N6432 PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS PNP 200V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.8 W
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2N6430 PBFREE 2N6430-6433.PDF
2N6430 PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS NPN 200V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.8 W
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2N6431 PBFREE 2N6430-6433.PDF
2N6431 PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS NPN 300V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.8 W
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CP692-MPS4992-WN CP692-MPS4992.pdf
Виробник: Central Semiconductor Corp
Description: IC TRANSISTOR NPN BIDIRECT
Packaging: Bulk
Part Status: Obsolete
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CMEDA-6I BK CMEDA-6I.PDF
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Bulk
Package / Case: SOT-28
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Diode Configuration: 4 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-28
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 50 V
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CMEDA-6I TR CMEDA-6I.PDF
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: SOT-28
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Diode Configuration: 4 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-28
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 25 nA @ 50 V
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CMR3U-01M TR13 PBFREE CMR3U-01M-10M.PDF
CMR3U-01M TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CMR1U-01M BK PBFREE CMR1U01M.PDF
CMR1U-01M BK PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CMR1U-01M TR13 TIN/LEAD CMR1U01M.PDF
CMR1U-01M TR13 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CMR1-01M TR13 CMR1-005M-01M.PDF
CMR1-01M TR13
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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CMR1-01M BK CMR1-005M-01M.PDF
CMR1-01M BK
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 100V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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BCY79-X PBFREE BCY78-79.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 45V 0.1A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
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