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1SMB30CA BK PBFREE 1SMB30CA BK PBFREE Central Semiconductor Corp 1SMB5.0CA_170CA.PDF Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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CDF56G6517N TR13 PBFREE CDF56G6517N TR13 PBFREE Central Semiconductor Corp CDF56G6517N.PDF Description: 650V, 17A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 1.1W (Ta)
Supplier Device Package: 8-DFN (5x6)
Drain to Source Voltage (Vdss): 650 V
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CDF56G6517N TR13 PBFREE CDF56G6517N TR13 PBFREE Central Semiconductor Corp CDF56G6517N.PDF Description: 650V, 17A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 1.1W (Ta)
Supplier Device Package: 8-DFN (5x6)
Drain to Source Voltage (Vdss): 650 V
на замовлення 2498 шт:
термін постачання 21-31 дні (днів)
1+439.40 грн
10+326.99 грн
100+252.27 грн
500+217.48 грн
1000+187.93 грн
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CTLSH5-40M833 TR Central Semiconductor Corp CTLSH5-40M833_2-17-10.PDF Description: DIODE SCHOTTKY 40V 5A TLM833
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TLM833
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CS220-12B CS220-12B Central Semiconductor Corp CS220-12x.pdf Description: SCR 200V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 200 V
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CMPDM203NH TR CMPDM203NH TR Central Semiconductor Corp CMPDM203NH.PDF Description: MOSFET N-CH 20V 3.2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
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CMPDM203NH BK Central Semiconductor Corp CMPDM203NH.pdf Description: MOSFET N-CH 20V 3.2A SOT23F
Packaging: Bulk
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
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CMZ5928B BK PBFREE CMZ5928B BK PBFREE Central Semiconductor Corp CMZ5921B.PDF Description: DIODE ZENER 13V 500MW SMA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SMA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
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1N823A DO-7 TR 1N823A DO-7 TR Central Semiconductor Corp 1N821A-29A.PDF Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
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1N823A BK 1N823A BK Central Semiconductor Corp 1N821A-29A.PDF Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
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1N823A DO-7 BK 1N823A DO-7 BK Central Semiconductor Corp 1N821A-29A.PDF Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
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CMR2-02 TR13 PBFREE CMR2-02 TR13 PBFREE Central Semiconductor Corp CMR2-10.PDF Description: DIODE GEN PURP 200V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+11.37 грн
6000+10.00 грн
9000+9.52 грн
Мінімальне замовлення: 3000
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CMR2-02 TR13 PBFREE CMR2-02 TR13 PBFREE Central Semiconductor Corp CMR2-10.PDF Description: DIODE GEN PURP 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 13463 шт:
термін постачання 21-31 дні (днів)
7+49.09 грн
11+29.47 грн
100+18.88 грн
500+13.42 грн
1000+12.04 грн
Мінімальне замовлення: 7
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CDF56G6511N TR13 PBFREE CDF56G6511N TR13 PBFREE Central Semiconductor Corp CDF56G6511N.PDF Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
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CDF56G6511N TR13 PBFREE CDF56G6511N TR13 PBFREE Central Semiconductor Corp CDF56G6511N.PDF Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
на замовлення 2302 шт:
термін постачання 21-31 дні (днів)
1+375.57 грн
10+286.57 грн
100+205.86 грн
500+175.27 грн
1000+154.22 грн
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CMPD1001 BK PBFREE CMPD1001 BK PBFREE Central Semiconductor Corp CMPD1001-A-S.PDF Description: DIODE GEN PURP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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CMPD1001S BK PBFREE CMPD1001S BK PBFREE Central Semiconductor Corp CMPD1001-A-S.PDF Description: DIODE ARRAY GP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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CMPD1001A BK PBFREE CMPD1001A BK PBFREE Central Semiconductor Corp CMPD1001-A-S.PDF Description: DIODE ARRAY GP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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CMMR1U-04 TR PBFREE CMMR1U-04 TR PBFREE Central Semiconductor Corp CMMR1U_SERIES.PDF Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 23172 шт:
термін постачання 21-31 дні (днів)
16+21.27 грн
19+17.26 грн
100+14.81 грн
500+12.50 грн
Мінімальне замовлення: 16
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CPR5U-040 BK Central Semiconductor Corp Description: DIODE STANDARD 400V 3A GPR4AM
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MPSH10 Central Semiconductor Corp MPSH10_MPSH11_DS.pdf Description: RF TRANS NPN 25V 650MHZ
Packaging: Box
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
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CZ5345B TR PBFREE CZ5345B TR PBFREE Central Semiconductor Corp CZ5333B_SERIES.PDF Description: DIODE ZENER 8.7V 5W DO201
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V
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CZ5345B BK PBFREE CZ5345B BK PBFREE Central Semiconductor Corp CZ5333B_SERIES.PDF Description: DIODE ZENER 8.7V 5W DO201
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V
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TIP34A Central Semiconductor Corp LSSGP091.PDF Description: TRANS PNP 60V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
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TIP34B Central Semiconductor Corp LSSGP091.PDF Description: TRANS PNP 80V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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TIP34C TIP34C Central Semiconductor Corp LSSGP091.PDF Description: TRANS PNP 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
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CMPDM302PH BK Central Semiconductor Corp CMPDM302PH.pdf Description: MOSFET P-CH 30V 2.4A SOT23F
Packaging: Bulk
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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CP773-CMPDM302PH-CT Central Semiconductor Corp CP773-CMPDM302PH_DS.pdf Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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CP773-CMPDM302PH-WN Central Semiconductor Corp CP773-CMPDM302PH_DS.pdf Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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CMHZ4692 TR CMHZ4692 TR Central Semiconductor Corp CMHZ4678-4717.PDF Description: DIODE ZENNER 6.8V 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V
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CMPT2484 BK PBFREE CMPT2484 BK PBFREE Central Semiconductor Corp CMPT2484.PDF Description: TRANS NPN 60V 0.05A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
товару немає в наявності
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CMPT5401E TR CMPT5401E TR Central Semiconductor Corp CMPT5401E.PDF Description: TRANS PNP 220V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 350 mW
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CMPT5401E BK CMPT5401E BK Central Semiconductor Corp CMPT5401E.PDF Description: TRANS PNP 220V 0.6A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 350 mW
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TIP101 TIP101 Central Semiconductor Corp TIP100-TIP102.pdf Description: TRANS NPN DARL 80V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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2N5430 Central Semiconductor Corp PwrTransistors_TO-66_Case.pdf Description: TRANS NPN 100V 7A TO66
Packaging: Box
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Frequency - Transition: 30MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
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2N2640 2N2640 Central Semiconductor Corp Dual_Transistors_TO-78_Case.1.pdf Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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2N2641 2N2641 Central Semiconductor Corp Dual_Transistors_TO-78_Case.1.pdf Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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2N2642 2N2642 Central Semiconductor Corp Dual_Transistors_TO-78_Case.1.pdf Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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2N2643 2N2643 Central Semiconductor Corp Dual_Transistors_TO-78_Case.1.pdf Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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CMDZ4V3 TR PBFREE CMDZ4V3 TR PBFREE Central Semiconductor Corp CMDZ2V4_SERIES.PDF Description: DIODE ZENER 4.3V 250MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.02 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMDZ4V3 TR PBFREE CMDZ4V3 TR PBFREE Central Semiconductor Corp CMDZ2V4_SERIES.PDF Description: DIODE ZENER 4.3V 250MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
на замовлення 5035 шт:
термін постачання 21-31 дні (днів)
9+40.09 грн
10+32.86 грн
100+22.84 грн
500+16.74 грн
1000+13.60 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CMHZ4620 BK CMHZ4620 BK Central Semiconductor Corp CMHZ4614-4627.PDF Description: DIODE ZENNER 3.3V 500MW SOD-123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
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CMHZ4620 TR CMHZ4620 TR Central Semiconductor Corp CMHZ4614-4627.PDF Description: DIODE ZENNER 3.3V 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
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CMJ1000 TR CMJ1000 TR Central Semiconductor Corp CMJ0130-CMJH220.PDF Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Silicon Field Effect
Supplier Device Package: SOD-123FL
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.7V
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1.5SMC170A TR13 PBFREE 1.5SMC170A TR13 PBFREE Central Semiconductor Corp 1.5SMC6.8A_200A.PDF Description: TVS DIODE 145VWM 234VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 161.5V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1SMC170A TR13 PBFREE 1SMC170A TR13 PBFREE Central Semiconductor Corp 1SMC5.0A_170A.PDF Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5SMC170CA TR13 PBFREE 1.5SMC170CA TR13 PBFREE Central Semiconductor Corp 1.5SMC6.8CA_200CA.PDF Description: TVS DIODE 145VWM 234VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 161.5V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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3SMC170A TR13 PBFREE 3SMC170A TR13 PBFREE Central Semiconductor Corp 3SMC5.0A_THRU_3SMC170A_R1.PDF Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3SMC170CA TR13 PBFREE 3SMC170CA TR13 PBFREE Central Semiconductor Corp 3SMC5.0CA_THRU_3SMC170CA.PDF Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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CP805-CXDM4060P-WN Central Semiconductor Corp CP805-CXDM4060P_WPD.PDF Description: MOSFET P-CH 40V 6.4A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Die
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
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CP805-CXDM4060P-CT Central Semiconductor Corp CP805-CXDM4060P_WPD.PDF Description: MOSFET P-CH 40V 6.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Die
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
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CMLT5087EM TR PBFREE CMLT5087EM TR PBFREE Central Semiconductor Corp CMLT5087EM.PDF Description: TRANS 2PNP 50V 0.1A SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
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2N3669 TIN/LEAD Central Semiconductor Corp Description: SCR THRU HOLE TO-3
Packaging: Tube
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2N3669 PBFREE Central Semiconductor Corp Description: SCR THRU HOLE TO-3
Packaging: Tube
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CMHZ4703 TR CMHZ4703 TR Central Semiconductor Corp CMHZ4678-4717.PDF Description: DIODE ZENNER 16V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V
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CXTA92 TR PBFREE CXTA92 TR PBFREE Central Semiconductor Corp CXTA42.PDF Description: TRANS PNP 300V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1000+42.93 грн
2000+38.50 грн
3000+37.76 грн
Мінімальне замовлення: 1000
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CXTA92 TR PBFREE CXTA92 TR PBFREE Central Semiconductor Corp CXTA42.PDF Description: TRANS PNP 300V 0.5A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
на замовлення 10051 шт:
термін постачання 21-31 дні (днів)
3+119.46 грн
10+78.01 грн
100+54.96 грн
500+41.94 грн
Мінімальне замовлення: 3
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CSIC10-1200 SL CSIC10-1200 SL Central Semiconductor Corp CSIC10-1200.PDF Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 41pF @ 600V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
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CMXTVS5V6 TR CMXTVS5V6 TR Central Semiconductor Corp CMXTVS5V6%2C_CMXTVS6V2.pdf Description: TVS DIODE 12VC SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3A
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 24W
Power Line Protection: No
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CMZ5334B TR13 Central Semiconductor Corp CMZ5342B.PDF Description: DIODE ZENER 3.6V 2W SMC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
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1SMB30CA BK PBFREE 1SMB5.0CA_170CA.PDF
1SMB30CA BK PBFREE
Виробник: Central Semiconductor Corp
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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CDF56G6517N TR13 PBFREE CDF56G6517N.PDF
CDF56G6517N TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 650V, 17A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 1.1W (Ta)
Supplier Device Package: 8-DFN (5x6)
Drain to Source Voltage (Vdss): 650 V
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CDF56G6517N TR13 PBFREE CDF56G6517N.PDF
CDF56G6517N TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 650V, 17A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 1.1W (Ta)
Supplier Device Package: 8-DFN (5x6)
Drain to Source Voltage (Vdss): 650 V
на замовлення 2498 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+439.40 грн
10+326.99 грн
100+252.27 грн
500+217.48 грн
1000+187.93 грн
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CTLSH5-40M833 TR CTLSH5-40M833_2-17-10.PDF
Виробник: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 5A TLM833
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TLM833
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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CS220-12B CS220-12x.pdf
CS220-12B
Виробник: Central Semiconductor Corp
Description: SCR 200V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 200 V
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CMPDM203NH TR CMPDM203NH.PDF
CMPDM203NH TR
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 20V 3.2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
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CMPDM203NH BK CMPDM203NH.pdf
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 20V 3.2A SOT23F
Packaging: Bulk
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
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CMZ5928B BK PBFREE CMZ5921B.PDF
CMZ5928B BK PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 13V 500MW SMA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SMA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
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1N823A DO-7 TR 1N821A-29A.PDF
1N823A DO-7 TR
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
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1N823A BK 1N821A-29A.PDF
1N823A BK
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
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1N823A DO-7 BK 1N821A-29A.PDF
1N823A DO-7 BK
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
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CMR2-02 TR13 PBFREE CMR2-10.PDF
CMR2-02 TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 200V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.37 грн
6000+10.00 грн
9000+9.52 грн
Мінімальне замовлення: 3000
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CMR2-02 TR13 PBFREE CMR2-10.PDF
CMR2-02 TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 13463 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.09 грн
11+29.47 грн
100+18.88 грн
500+13.42 грн
1000+12.04 грн
Мінімальне замовлення: 7
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CDF56G6511N TR13 PBFREE CDF56G6511N.PDF
CDF56G6511N TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
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CDF56G6511N TR13 PBFREE CDF56G6511N.PDF
CDF56G6511N TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
на замовлення 2302 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+375.57 грн
10+286.57 грн
100+205.86 грн
500+175.27 грн
1000+154.22 грн
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CMPD1001 BK PBFREE CMPD1001-A-S.PDF
CMPD1001 BK PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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CMPD1001S BK PBFREE CMPD1001-A-S.PDF
CMPD1001S BK PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ARRAY GP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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CMPD1001A BK PBFREE CMPD1001-A-S.PDF
CMPD1001A BK PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ARRAY GP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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CMMR1U-04 TR PBFREE CMMR1U_SERIES.PDF
CMMR1U-04 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 23172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.27 грн
19+17.26 грн
100+14.81 грн
500+12.50 грн
Мінімальне замовлення: 16
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CPR5U-040 BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 400V 3A GPR4AM
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MPSH10 MPSH10_MPSH11_DS.pdf
Виробник: Central Semiconductor Corp
Description: RF TRANS NPN 25V 650MHZ
Packaging: Box
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
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CZ5345B TR PBFREE CZ5333B_SERIES.PDF
CZ5345B TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 8.7V 5W DO201
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V
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CZ5345B BK PBFREE CZ5333B_SERIES.PDF
CZ5345B BK PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 8.7V 5W DO201
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V
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TIP34A LSSGP091.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 60V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
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TIP34B LSSGP091.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 80V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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TIP34C LSSGP091.PDF
TIP34C
Виробник: Central Semiconductor Corp
Description: TRANS PNP 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
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CMPDM302PH BK CMPDM302PH.pdf
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A SOT23F
Packaging: Bulk
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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CP773-CMPDM302PH-CT CP773-CMPDM302PH_DS.pdf
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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CP773-CMPDM302PH-WN CP773-CMPDM302PH_DS.pdf
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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CMHZ4692 TR CMHZ4678-4717.PDF
CMHZ4692 TR
Виробник: Central Semiconductor Corp
Description: DIODE ZENNER 6.8V 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V
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CMPT2484 BK PBFREE CMPT2484.PDF
CMPT2484 BK PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS NPN 60V 0.05A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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CMPT5401E TR CMPT5401E.PDF
CMPT5401E TR
Виробник: Central Semiconductor Corp
Description: TRANS PNP 220V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 350 mW
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CMPT5401E BK CMPT5401E.PDF
CMPT5401E BK
Виробник: Central Semiconductor Corp
Description: TRANS PNP 220V 0.6A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 350 mW
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TIP101 TIP100-TIP102.pdf
TIP101
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 80V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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2N5430 PwrTransistors_TO-66_Case.pdf
Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 7A TO66
Packaging: Box
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Frequency - Transition: 30MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
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2N2640 Dual_Transistors_TO-78_Case.1.pdf
2N2640
Виробник: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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2N2641 Dual_Transistors_TO-78_Case.1.pdf
2N2641
Виробник: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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2N2642 Dual_Transistors_TO-78_Case.1.pdf
2N2642
Виробник: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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2N2643 Dual_Transistors_TO-78_Case.1.pdf
2N2643
Виробник: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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CMDZ4V3 TR PBFREE CMDZ2V4_SERIES.PDF
CMDZ4V3 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 4.3V 250MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.02 грн
Мінімальне замовлення: 3000
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CMDZ4V3 TR PBFREE CMDZ2V4_SERIES.PDF
CMDZ4V3 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 4.3V 250MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
на замовлення 5035 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+40.09 грн
10+32.86 грн
100+22.84 грн
500+16.74 грн
1000+13.60 грн
Мінімальне замовлення: 9
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CMHZ4620 BK CMHZ4614-4627.PDF
CMHZ4620 BK
Виробник: Central Semiconductor Corp
Description: DIODE ZENNER 3.3V 500MW SOD-123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
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CMHZ4620 TR CMHZ4614-4627.PDF
CMHZ4620 TR
Виробник: Central Semiconductor Corp
Description: DIODE ZENNER 3.3V 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
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CMJ1000 TR CMJ0130-CMJH220.PDF
CMJ1000 TR
Виробник: Central Semiconductor Corp
Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Silicon Field Effect
Supplier Device Package: SOD-123FL
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.7V
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1.5SMC170A TR13 PBFREE 1.5SMC6.8A_200A.PDF
1.5SMC170A TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: TVS DIODE 145VWM 234VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 161.5V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1SMC170A TR13 PBFREE 1SMC5.0A_170A.PDF
1SMC170A TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5SMC170CA TR13 PBFREE 1.5SMC6.8CA_200CA.PDF
1.5SMC170CA TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: TVS DIODE 145VWM 234VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 161.5V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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3SMC170A TR13 PBFREE 3SMC5.0A_THRU_3SMC170A_R1.PDF
3SMC170A TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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3SMC170CA TR13 PBFREE 3SMC5.0CA_THRU_3SMC170CA.PDF
3SMC170CA TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: TVS DIODE 170VWM 275VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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CP805-CXDM4060P-WN CP805-CXDM4060P_WPD.PDF
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 40V 6.4A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Die
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
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CP805-CXDM4060P-CT CP805-CXDM4060P_WPD.PDF
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 40V 6.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Die
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
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CMLT5087EM TR PBFREE CMLT5087EM.PDF
CMLT5087EM TR PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS 2PNP 50V 0.1A SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
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2N3669 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: SCR THRU HOLE TO-3
Packaging: Tube
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2N3669 PBFREE
Виробник: Central Semiconductor Corp
Description: SCR THRU HOLE TO-3
Packaging: Tube
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CMHZ4703 TR CMHZ4678-4717.PDF
CMHZ4703 TR
Виробник: Central Semiconductor Corp
Description: DIODE ZENNER 16V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.1 V
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CXTA92 TR PBFREE CXTA42.PDF
CXTA92 TR PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS PNP 300V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+42.93 грн
2000+38.50 грн
3000+37.76 грн
Мінімальне замовлення: 1000
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CXTA92 TR PBFREE CXTA42.PDF
CXTA92 TR PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS PNP 300V 0.5A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
на замовлення 10051 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.46 грн
10+78.01 грн
100+54.96 грн
500+41.94 грн
Мінімальне замовлення: 3
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CSIC10-1200 SL CSIC10-1200.PDF
CSIC10-1200 SL
Виробник: Central Semiconductor Corp
Description: DIODE SIL CARB 1.2KV 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 41pF @ 600V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
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CMXTVS5V6 TR CMXTVS5V6%2C_CMXTVS6V2.pdf
CMXTVS5V6 TR
Виробник: Central Semiconductor Corp
Description: TVS DIODE 12VC SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3A
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 24W
Power Line Protection: No
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CMZ5334B TR13 CMZ5342B.PDF
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 3.6V 2W SMC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 1 V
товару немає в наявності
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