Продукція > CENTRAL SEMICONDUCTOR CORP > Всі товари виробника CENTRAL SEMICONDUCTOR CORP (7817) > Сторінка 110 з 131
| Фото | Назва | Виробник | Інформація |
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| 1N4462 TR PBFREE | Central Semiconductor Corp |
 Description: DIODE ZENER 7.5V 1.5W DO41Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V |
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| 1N4466 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 11V 1.5W DO41 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 300 nA @ 8.8 V |
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В кошику од. на суму грн. | |||||||||||
| 1N4460 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 6.2V 1.5W DO41 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 20 µA @ 3.72 V |
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В кошику од. на суму грн. | |||||||||||
| 1N4462 BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 7.5V 1.5W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 1N4463 BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 8.2V 1.5W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 500 nA @ 4.92 V |
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В кошику од. на суму грн. | |||||||||||
| 1N4464 BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 9.1V 1.5W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 300 nA @ 5.46 V |
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В кошику од. на суму грн. | |||||||||||
| 1N4466 BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 11V 1.5W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 300 nA @ 8.8 V |
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В кошику од. на суму грн. | |||||||||||
| 1N4460 BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 6.2V 1.5W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 20 µA @ 3.72 V |
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| 1N4461 BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 6.8V 1.5W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 5 µA @ 4.08 V |
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| 1N4469 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 15V 1.5W DO41 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 50 nA @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 1N4469 BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 15V 1.5W DO41 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 50 nA @ 12 V |
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В кошику од. на суму грн. | |||||||||||
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CMPZDA15V TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER ARRAY 14.7V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CMPZDA15V TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER ARRAY 14.7V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V |
на замовлення 5910 шт: термін постачання 21-31 дні (днів) |
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1SMB30CA TR13 PBFREE | Central Semiconductor Corp |
Description: TVS DIODE 30VWM 48.4VC SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.4A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 600W Power Line Protection: No |
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1SMB30CA TR13 PBFREE | Central Semiconductor Corp |
Description: TVS DIODE 30VWM 48.4VC SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.4A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 600W Power Line Protection: No |
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1SMB30CA BK PBFREE | Central Semiconductor Corp |
Description: TVS DIODE 30VWM 48.4VC SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.4A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 600W Power Line Protection: No |
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В кошику од. на суму грн. | ||||||||||
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CDF56G6517N TR13 PBFREE | Central Semiconductor Corp |
Description: 650V, 17A, N-CHANNEL GAN FET IN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Power Dissipation (Max): 1.1W (Ta) Supplier Device Package: 8-DFN (5x6) Drain to Source Voltage (Vdss): 650 V |
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CDF56G6517N TR13 PBFREE | Central Semiconductor Corp |
Description: 650V, 17A, N-CHANNEL GAN FET IN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Power Dissipation (Max): 1.1W (Ta) Supplier Device Package: 8-DFN (5x6) Drain to Source Voltage (Vdss): 650 V |
на замовлення 2498 шт: термін постачання 21-31 дні (днів) |
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| CTLSH5-40M833 TR | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 40V 5A TLM833 Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 220pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TLM833 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
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CS220-12B | Central Semiconductor Corp |
Description: SCR 200V 12A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 15 mA Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Supplier Device Package: TO-220-3 Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 200 V |
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CMPDM203NH TR | Central Semiconductor Corp |
Description: MOSFET N-CH 20V 3.2A SOT-23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V |
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| CMPDM203NH BK | Central Semiconductor Corp |
Description: MOSFET N-CH 20V 3.2A SOT23F Packaging: Bulk Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V |
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CMZ5928B BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 13V 500MW SMA Tolerance: ±5% Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: SMA Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V |
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1N823A DO-7 TR | Central Semiconductor Corp |
Description: DIODE ZENER 6.2V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW |
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В кошику од. на суму грн. | ||||||||||
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1N823A BK | Central Semiconductor Corp |
Description: DIODE ZENER 6.2V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW |
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1N823A DO-7 BK | Central Semiconductor Corp |
Description: DIODE ZENER 6.2V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW |
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В кошику од. на суму грн. | ||||||||||
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CMR2-02 TR13 PBFREE | Central Semiconductor Corp |
Description: DIODE GEN PURP 200V 2A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CMR2-02 TR13 PBFREE | Central Semiconductor Corp |
Description: DIODE GEN PURP 200V 2A SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 13463 шт: термін постачання 21-31 дні (днів) |
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CDF56G6511N TR13 PBFREE | Central Semiconductor Corp |
Description: 650V, 11A, N-CHANNEL GAN FET IN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 1.1W (Ta), 84W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
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В кошику од. на суму грн. | ||||||||||
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CDF56G6511N TR13 PBFREE | Central Semiconductor Corp |
Description: 650V, 11A, N-CHANNEL GAN FET IN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 1.1W (Ta), 84W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
на замовлення 2302 шт: термін постачання 21-31 дні (днів) |
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CMPD1001 BK PBFREE | Central Semiconductor Corp |
Description: DIODE GEN PURP 90V 250MA SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 90 V |
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CMPD1001S BK PBFREE | Central Semiconductor Corp |
Description: DIODE ARRAY GP 90V 250MA SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250mA (DC) Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 90 V |
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CMPD1001A BK PBFREE | Central Semiconductor Corp |
Description: DIODE ARRAY GP 90V 250MA SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 250mA (DC) Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 90 V |
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CMMR1U-04 TR PBFREE | Central Semiconductor Corp |
Description: DIODE STANDARD 400V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 10154 шт: термін постачання 21-31 дні (днів) |
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| CPR5U-040 BK | Central Semiconductor Corp |
Description: DIODE STANDARD 400V 3A GPR4AM Packaging: Bulk Package / Case: R-4, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 100pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: GPR-4AM Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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| MPSH10 | Central Semiconductor Corp |
Description: RF TRANS NPN 25V 650MHZ Packaging: Box Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 350mW Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Frequency - Transition: 650MHz |
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CZ5345B TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 8.7V 5W DO201 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.7 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: DO-201 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V |
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В кошику од. на суму грн. | ||||||||||
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CZ5345B BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 8.7V 5W DO201 Packaging: Bulk Tolerance: ±5% Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.7 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: DO-201 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| TIP34A | Central Semiconductor Corp |
Description: TRANS PNP 60V 10A TO218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TIP34B | Central Semiconductor Corp |
Description: TRANS PNP 80V 10A TO218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TIP34C | Central Semiconductor Corp |
Description: TRANS PNP 100V 10A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CMPDM302PH BK | Central Semiconductor Corp |
Description: MOSFET P-CH 30V 2.4A SOT23F Packaging: Bulk Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CP773-CMPDM302PH-CT | Central Semiconductor Corp |
Description: MOSFET P-CH 30V 2.4A DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CP773-CMPDM302PH-WN | Central Semiconductor Corp |
Description: MOSFET P-CH 30V 2.4A DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
CMHZ4692 TR | Central Semiconductor Corp |
Description: DIODE ZENNER 6.8V 500MW SOD-123 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CMPT2484 BK PBFREE | Central Semiconductor Corp |
Description: TRANS NPN 60V 0.05A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CMPT5401E TR | Central Semiconductor Corp |
Description: TRANS PNP 220V 0.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 220 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CMPT5401E BK | Central Semiconductor Corp |
Description: TRANS PNP 220V 0.6A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 220 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
TIP101 | Central Semiconductor Corp |
Description: TRANS NPN DARL 80V 8A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 2N5430 | Central Semiconductor Corp |
Description: TRANS NPN 100V 7A TO66 Packaging: Box Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Frequency - Transition: 30MHz Supplier Device Package: TO-66 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
2N2640 | Central Semiconductor Corp |
Description: TRANS 2NPN 30MA 45V TO78-6 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Power - Max: 600mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-78-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N2641 | Central Semiconductor Corp |
Description: TRANS 2NPN 30MA 45V TO78-6 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Power - Max: 600mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-78-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N2642 | Central Semiconductor Corp |
Description: TRANS 2NPN 30MA 45V TO78-6 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Power - Max: 600mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-78-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N2643 | Central Semiconductor Corp |
Description: TRANS 2NPN 30MA 45V TO78-6 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Power - Max: 600mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 45V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-78-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
CMDZ4V3 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 4.3V 250MW SOD323 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CMDZ4V3 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 4.3V 250MW SOD323 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
на замовлення 5035 шт: термін постачання 21-31 дні (днів) |
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CMHZ4620 BK | Central Semiconductor Corp |
Description: DIODE ZENNER 3.3V 500MW SOD-123 Packaging: Bulk Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CMHZ4620 TR | Central Semiconductor Corp |
Description: DIODE ZENNER 3.3V 500MW SOD-123 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
.jpg "CMJ1000 TR") |
CMJ1000 TR | Central Semiconductor Corp |
Description: DIODE CUR REG 100V 1.32MA 500MW Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Applications: Silicon Field Effect Supplier Device Package: SOD-123FL Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.32mA Voltage - Limiting (Max): 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
1.5SMC170A TR13 PBFREE | Central Semiconductor Corp |
Description: TVS DIODE 145VWM 234VC SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 145V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 161.5V Voltage - Clamping (Max) @ Ipp: 234V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N4462 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 7.5V 1.5W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
Description: DIODE ZENER 7.5V 1.5W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4466 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 11V 1.5W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 300 nA @ 8.8 V
Description: DIODE ZENER 11V 1.5W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 300 nA @ 8.8 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4460 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.2V 1.5W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 20 µA @ 3.72 V
Description: DIODE ZENER 6.2V 1.5W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 20 µA @ 3.72 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4462 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 7.5V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
Description: DIODE ZENER 7.5V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4463 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 8.2V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 4.92 V
Description: DIODE ZENER 8.2V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 4.92 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4464 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 9.1V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 300 nA @ 5.46 V
Description: DIODE ZENER 9.1V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 300 nA @ 5.46 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4466 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 11V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 300 nA @ 8.8 V
Description: DIODE ZENER 11V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 300 nA @ 8.8 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4460 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.2V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 20 µA @ 3.72 V
Description: DIODE ZENER 6.2V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 20 µA @ 3.72 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4461 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.8V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 4.08 V
Description: DIODE ZENER 6.8V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 4.08 V
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| 1N4469 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 15V 1.5W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 12 V
Description: DIODE ZENER 15V 1.5W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 12 V
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| 1N4469 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 15V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 12 V
Description: DIODE ZENER 15V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 12 V
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| CMPZDA15V TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER ARRAY 14.7V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Description: DIODE ZENER ARRAY 14.7V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.86 грн |
| CMPZDA15V TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER ARRAY 14.7V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Description: DIODE ZENER ARRAY 14.7V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
на замовлення 5910 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.75 грн |
| 11+ | 27.59 грн |
| 100+ | 20.64 грн |
| 500+ | 15.22 грн |
| 1000+ | 11.76 грн |
| 1SMB30CA TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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од. на суму грн.
| 1SMB30CA TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB30CA BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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В кошику
од. на суму грн.
| CDF56G6517N TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 650V, 17A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 1.1W (Ta)
Supplier Device Package: 8-DFN (5x6)
Drain to Source Voltage (Vdss): 650 V
Description: 650V, 17A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 1.1W (Ta)
Supplier Device Package: 8-DFN (5x6)
Drain to Source Voltage (Vdss): 650 V
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од. на суму грн.
| CDF56G6517N TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 650V, 17A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 1.1W (Ta)
Supplier Device Package: 8-DFN (5x6)
Drain to Source Voltage (Vdss): 650 V
Description: 650V, 17A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Power Dissipation (Max): 1.1W (Ta)
Supplier Device Package: 8-DFN (5x6)
Drain to Source Voltage (Vdss): 650 V
на замовлення 2498 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 421.53 грн |
| 10+ | 313.70 грн |
| 100+ | 242.01 грн |
| 500+ | 208.64 грн |
| 1000+ | 180.29 грн |
| CTLSH5-40M833 TR |
|
Виробник: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 5A TLM833
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TLM833
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 5A TLM833
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TLM833
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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В кошику
од. на суму грн.
| CS220-12B |
|
Виробник: Central Semiconductor Corp
Description: SCR 200V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 200 V
Description: SCR 200V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 200 V
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| CMPDM203NH TR |
|
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 20V 3.2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
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| CMPDM203NH BK |
|
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 20V 3.2A SOT23F
Packaging: Bulk
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A SOT23F
Packaging: Bulk
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 10 V
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В кошику
од. на суму грн.
| CMZ5928B BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 13V 500MW SMA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SMA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
Description: DIODE ZENER 13V 500MW SMA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SMA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
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В кошику
од. на суму грн.
| 1N823A DO-7 TR |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
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В кошику
од. на суму грн.
| 1N823A BK |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
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В кошику
од. на суму грн.
| 1N823A DO-7 BK |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| CMR2-02 TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 200V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.91 грн |
| 6000+ | 9.60 грн |
| 9000+ | 9.13 грн |
| CMR2-02 TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 2A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 13463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.10 грн |
| 11+ | 28.27 грн |
| 100+ | 18.11 грн |
| 500+ | 12.88 грн |
| 1000+ | 11.55 грн |
| CDF56G6511N TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
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| CDF56G6511N TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650V, 11A, N-CHANNEL GAN FET IN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 1.1W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
на замовлення 2302 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 360.30 грн |
| 10+ | 274.92 грн |
| 100+ | 197.49 грн |
| 500+ | 168.15 грн |
| 1000+ | 147.95 грн |
| CMPD1001 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
Description: DIODE GEN PURP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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| CMPD1001S BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ARRAY GP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
Description: DIODE ARRAY GP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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| CMPD1001A BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ARRAY GP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
Description: DIODE ARRAY GP 90V 250MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V
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| CMMR1U-04 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 10154 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.33 грн |
| 16+ | 19.88 грн |
| 100+ | 18.31 грн |
| 500+ | 14.39 грн |
| 1000+ | 12.73 грн |
| CPR5U-040 BK |
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 400V 3A GPR4AM
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 3A GPR4AM
Packaging: Bulk
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| MPSH10 |
|
Виробник: Central Semiconductor Corp
Description: RF TRANS NPN 25V 650MHZ
Packaging: Box
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Description: RF TRANS NPN 25V 650MHZ
Packaging: Box
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
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| CZ5345B TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 8.7V 5W DO201
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V
Description: DIODE ZENER 8.7V 5W DO201
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V
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| CZ5345B BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 8.7V 5W DO201
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V
Description: DIODE ZENER 8.7V 5W DO201
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 6.6 V
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| TIP34A |
|
Виробник: Central Semiconductor Corp
Description: TRANS PNP 60V 10A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
Description: TRANS PNP 60V 10A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
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| TIP34B |
|
Виробник: Central Semiconductor Corp
Description: TRANS PNP 80V 10A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
Description: TRANS PNP 80V 10A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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| TIP34C |
|
Виробник: Central Semiconductor Corp
Description: TRANS PNP 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
Description: TRANS PNP 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
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| CMPDM302PH BK |
|
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A SOT23F
Packaging: Bulk
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET P-CH 30V 2.4A SOT23F
Packaging: Bulk
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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| CP773-CMPDM302PH-CT |
|
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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| CP773-CMPDM302PH-WN |
|
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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| CMHZ4692 TR |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENNER 6.8V 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V
Description: DIODE ZENNER 6.8V 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.1 V
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| CMPT2484 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: TRANS NPN 60V 0.05A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Description: TRANS NPN 60V 0.05A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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| CMPT5401E TR |
|
Виробник: Central Semiconductor Corp
Description: TRANS PNP 220V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 350 mW
Description: TRANS PNP 220V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 350 mW
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| CMPT5401E BK |
|
Виробник: Central Semiconductor Corp
Description: TRANS PNP 220V 0.6A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 350 mW
Description: TRANS PNP 220V 0.6A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 350 mW
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| TIP101 |
|
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 80V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
Description: TRANS NPN DARL 80V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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| 2N5430 |
|
Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 7A TO66
Packaging: Box
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Frequency - Transition: 30MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
Description: TRANS NPN 100V 7A TO66
Packaging: Box
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Frequency - Transition: 30MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
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| 2N2640 |
|
Виробник: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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| 2N2641 |
|
Виробник: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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| 2N2642 |
|
Виробник: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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| 2N2643 |
|
Виробник: Central Semiconductor Corp
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
Description: TRANS 2NPN 30MA 45V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 45V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-78-6
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| CMDZ4V3 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 4.3V 250MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 4.3V 250MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.57 грн |
| CMDZ4V3 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 4.3V 250MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 4.3V 250MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
на замовлення 5035 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.46 грн |
| 10+ | 31.52 грн |
| 100+ | 21.91 грн |
| 500+ | 16.06 грн |
| 1000+ | 13.05 грн |
| CMHZ4620 BK |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENNER 3.3V 500MW SOD-123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Description: DIODE ZENNER 3.3V 500MW SOD-123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
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| CMHZ4620 TR |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENNER 3.3V 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
Description: DIODE ZENNER 3.3V 500MW SOD-123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V
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| CMJ1000 TR |
|
Виробник: Central Semiconductor Corp
Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Silicon Field Effect
Supplier Device Package: SOD-123FL
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.7V
Description: DIODE CUR REG 100V 1.32MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Silicon Field Effect
Supplier Device Package: SOD-123FL
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.32mA
Voltage - Limiting (Max): 1.7V
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| 1.5SMC170A TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: TVS DIODE 145VWM 234VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 161.5V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 145VWM 234VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 161.5V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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