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2N6028 TRE TIN/LEAD Central Semiconductor Corp Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028 APM TIN/LEAD Central Semiconductor Corp Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028 TIN/LEAD 2N6028 TIN/LEAD Central Semiconductor Corp Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028 APM PBFREE Central Semiconductor Corp 2N6027-6028.PDF Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028 TRE PBFREE Central Semiconductor Corp Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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CZT32C TR CZT32C TR Central Semiconductor Corp CZT31C-32C_5-9-19.PDF Description: TRANS 100V 3A SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Current - Collector Cutoff (Max): 300µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223
Frequency - Transition: 3MHz
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1N757A TR TIN/LEAD 1N757A TR TIN/LEAD Central Semiconductor Corp Description: 9.1V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N757A BK TIN/LEAD 1N757A BK TIN/LEAD Central Semiconductor Corp Description: 9.1V 500MW TH DIODE-ZENER SINGLE
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N4616 TR TIN/LEAD 1N4616 TR TIN/LEAD Central Semiconductor Corp 1N4614-4627.PDF Description: 2.2V 250MW TH DIODE-ZENER SINGLE
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1300 Ohms
Voltage - Zener (Nom) (Vz): 2.2 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
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1N4616 BK TIN/LEAD 1N4616 BK TIN/LEAD Central Semiconductor Corp 1N4614-4627.PDF Description: 2.2V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1300 Ohms
Voltage - Zener (Nom) (Vz): 2.2 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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1N4625 BK TIN/LEAD 1N4625 BK TIN/LEAD Central Semiconductor Corp Description: 5.1V 250MW TH DIODE-ZENER SINGLE
Packaging: Box
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
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1N4626 TR TIN/LEAD 1N4626 TR TIN/LEAD Central Semiconductor Corp Description: 5.6V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1400 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4626 BK TIN/LEAD 1N4626 BK TIN/LEAD Central Semiconductor Corp Description: 5.6V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1400 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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1N4614 TR TIN/LEAD 1N4614 TR TIN/LEAD Central Semiconductor Corp Description: 1.8V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1200 Ohms
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4614 BK TIN/LEAD 1N4614 BK TIN/LEAD Central Semiconductor Corp Description: 1.8V 250MW TH DIODE-ZENER SINGLE
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1200 Ohms
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
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1N4623 TR TIN/LEAD 1N4623 TR TIN/LEAD Central Semiconductor Corp Description: 4.3V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1600 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4623 BK TIN/LEAD 1N4623 BK TIN/LEAD Central Semiconductor Corp Description: 4.3V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1600 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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CMSSH-3C TR TIN/LEAD CMSSH-3C TR TIN/LEAD Central Semiconductor Corp Description: 100MA 30V SMD DIODE-SCHOTTKY (<1
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-323
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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CR250-4 BK Central Semiconductor Corp CR250-2_Series.pdf Description: DIODE STANDARD 4000V 200MA DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
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2N5249 TRE PBFREE 2N5249 TRE PBFREE Central Semiconductor Corp Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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2N5249 TIN/LEAD 2N5249 TIN/LEAD Central Semiconductor Corp Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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2N5249 TRE TIN/LEAD 2N5249 TRE TIN/LEAD Central Semiconductor Corp Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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CMJD0300 TR13 PBFREE CMJD0300 TR13 PBFREE Central Semiconductor Corp CMJD0130-CMJD5750.PDF Description: DIODE CUR REG 100V 420UA 445MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 445mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 420µA
Voltage - Limiting (Max): 800mV
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CMJD0300 TR PBFREE CMJD0300 TR PBFREE Central Semiconductor Corp CMJD0130-CMJD5750.PDF Description: DIODE CUR REG 100V 420UA 445MW
Voltage - Limiting (Max): 800mV
Regulator Current (Max): 420µA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 445mW
Supplier Device Package: DFN123F
Applications: LED Driver
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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2N3903 TIN/LEAD 2N3903 TIN/LEAD Central Semiconductor Corp Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3903 APM PBFREE 2N3903 APM PBFREE Central Semiconductor Corp Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3903 TRE PBFREE 2N3903 TRE PBFREE Central Semiconductor Corp Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3903 APM TIN/LEAD 2N3903 APM TIN/LEAD Central Semiconductor Corp Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3903 TRE TIN/LEAD 2N3903 TRE TIN/LEAD Central Semiconductor Corp Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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1N4099 TR TIN/LEAD 1N4099 TR TIN/LEAD Central Semiconductor Corp Description: 6.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
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1N4099 BK TIN/LEAD 1N4099 BK TIN/LEAD Central Semiconductor Corp Description: 6.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
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1N4474 TR PBFREE Central Semiconductor Corp 1N4460-4496.PDF Description: DIODE ZENER 24V 1.5W DO41
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
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1N4474 BK PBFREE Central Semiconductor Corp 1N4460-4496.PDF Description: DIODE ZENER 24V 1.5W DO41
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4474 TR TIN/LEAD 1N4474 TR TIN/LEAD Central Semiconductor Corp 1N4460-4496.PDF Description: 24V 1.5W TH DIODE-ZENER SINGLE:
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4474 BK TIN/LEAD 1N4474 BK TIN/LEAD Central Semiconductor Corp 1N4460-4496.PDF Description: 24V 1.5W TH DIODE-ZENER SINGLE:
Packaging: Box
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
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CMSZ5226B TR PBFREE CMSZ5226B TR PBFREE Central Semiconductor Corp Description: 3.3V 275MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товару немає в наявності
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CMSZ5226B TR TIN/LEAD CMSZ5226B TR TIN/LEAD Central Semiconductor Corp Description: 3.3V 275MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товару немає в наявності
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CMZ5346BQ TR13 PBFREE CMZ5346BQ TR13 PBFREE Central Semiconductor Corp cmz5342b.PDF Description: SURFACE MOUNT-DIODE-ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Grade: Automotive
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+13.07 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CMZ5346BQ TR13 PBFREE CMZ5346BQ TR13 PBFREE Central Semiconductor Corp cmz5342b.PDF Description: SURFACE MOUNT-DIODE-ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Grade: Automotive
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
6+54.76 грн
10+33.00 грн
100+21.30 грн
500+15.27 грн
1000+13.74 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CMZ5346B TR13 PBFREE CMZ5346B TR13 PBFREE Central Semiconductor Corp Description: 9.1V 10W SMD DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
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CMZ5346B TR13 TIN/LEAD CMZ5346B TR13 TIN/LEAD Central Semiconductor Corp Description: 9.1V 10W SMD DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
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1N759A TR TIN/LEAD 1N759A TR TIN/LEAD Central Semiconductor Corp Description: 12V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N759A BK TIN/LEAD 1N759A BK TIN/LEAD Central Semiconductor Corp Description: 12V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N4619 BK TIN/LEAD 1N4619 BK TIN/LEAD Central Semiconductor Corp Description: 3V 250MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 800 nA @ 1 V
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1N750A BK TIN/LEAD 1N750A BK TIN/LEAD Central Semiconductor Corp Description: 4.7V 500MW TH DIODE-ZENER SINGLE
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 19 Ohms
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2N4125 PBFREE 2N4125 PBFREE Central Semiconductor Corp 2N4123-4126.PDF Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 TRE PBFREE 2N4125 TRE PBFREE Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 APM PBFREE 2N4125 APM PBFREE Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 TIN/LEAD 2N4125 TIN/LEAD Central Semiconductor Corp 2N4123-4126.PDF Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 TRE TIN/LEAD 2N4125 TRE TIN/LEAD Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 APM TIN/LEAD 2N4125 APM TIN/LEAD Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N3391A TRE PBFREE 2N3391A TRE PBFREE Central Semiconductor Corp 2N3391A-3393.PDF Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N3391A APM PBFREE 2N3391A APM PBFREE Central Semiconductor Corp 2N3391A-3393.PDF Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N3391A TIN/LEAD 2N3391A TIN/LEAD Central Semiconductor Corp LSSGP072.PDF Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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2N3391A TRE TIN/LEAD Central Semiconductor Corp Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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2N3391A APM TIN/LEAD 2N3391A APM TIN/LEAD Central Semiconductor Corp LSSGP072.PDF Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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2N708 TIN/LEAD 2N708 TIN/LEAD Central Semiconductor Corp Description: 15V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 25µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: TO-18
Voltage - Collector Emitter Breakdown (Max): 15 V
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1N4618 TR TIN/LEAD 1N4618 TR TIN/LEAD Central Semiconductor Corp 1N4614-4627.PDF Description: 2.7V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4618 BK TIN/LEAD 1N4618 BK TIN/LEAD Central Semiconductor Corp 1N4614-4627.PDF Description: 2.7V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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1N965B TR TIN/LEAD 1N965B TR TIN/LEAD Central Semiconductor Corp 1N957B-992B.PDF Description: 15V 500MW TH DIODE-ZENER SINGLE:
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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2N6028 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028 TIN/LEAD
2N6028 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028 APM PBFREE 2N6027-6028.PDF
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6028 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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CZT32C TR CZT31C-32C_5-9-19.PDF
CZT32C TR
Виробник: Central Semiconductor Corp
Description: TRANS 100V 3A SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Current - Collector Cutoff (Max): 300µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223
Frequency - Transition: 3MHz
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1N757A TR TIN/LEAD
1N757A TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 9.1V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N757A BK TIN/LEAD
1N757A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 9.1V 500MW TH DIODE-ZENER SINGLE
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N4616 TR TIN/LEAD 1N4614-4627.PDF
1N4616 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 2.2V 250MW TH DIODE-ZENER SINGLE
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1300 Ohms
Voltage - Zener (Nom) (Vz): 2.2 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
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1N4616 BK TIN/LEAD 1N4614-4627.PDF
1N4616 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 2.2V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1300 Ohms
Voltage - Zener (Nom) (Vz): 2.2 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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1N4625 BK TIN/LEAD
1N4625 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 5.1V 250MW TH DIODE-ZENER SINGLE
Packaging: Box
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
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1N4626 TR TIN/LEAD
1N4626 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 5.6V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1400 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4626 BK TIN/LEAD
1N4626 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 5.6V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1400 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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1N4614 TR TIN/LEAD
1N4614 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 1.8V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1200 Ohms
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4614 BK TIN/LEAD
1N4614 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 1.8V 250MW TH DIODE-ZENER SINGLE
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1200 Ohms
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
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1N4623 TR TIN/LEAD
1N4623 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 4.3V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1600 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4623 BK TIN/LEAD
1N4623 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 4.3V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1600 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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CMSSH-3C TR TIN/LEAD
CMSSH-3C TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 100MA 30V SMD DIODE-SCHOTTKY (<1
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-323
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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CR250-4 BK CR250-2_Series.pdf
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 4000V 200MA DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
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2N5249 TRE PBFREE
2N5249 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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2N5249 TIN/LEAD
2N5249 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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2N5249 TRE TIN/LEAD
2N5249 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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CMJD0300 TR13 PBFREE CMJD0130-CMJD5750.PDF
CMJD0300 TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE CUR REG 100V 420UA 445MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 445mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 420µA
Voltage - Limiting (Max): 800mV
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CMJD0300 TR PBFREE CMJD0130-CMJD5750.PDF
CMJD0300 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE CUR REG 100V 420UA 445MW
Voltage - Limiting (Max): 800mV
Regulator Current (Max): 420µA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 445mW
Supplier Device Package: DFN123F
Applications: LED Driver
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
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2N3903 TIN/LEAD
2N3903 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3903 APM PBFREE
2N3903 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3903 TRE PBFREE
2N3903 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3903 APM TIN/LEAD
2N3903 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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2N3903 TRE TIN/LEAD
2N3903 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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1N4099 TR TIN/LEAD
1N4099 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 6.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
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1N4099 BK TIN/LEAD
1N4099 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 6.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
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1N4474 TR PBFREE 1N4460-4496.PDF
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 24V 1.5W DO41
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
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1N4474 BK PBFREE 1N4460-4496.PDF
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 24V 1.5W DO41
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
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1N4474 TR TIN/LEAD 1N4460-4496.PDF
1N4474 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 24V 1.5W TH DIODE-ZENER SINGLE:
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4474 BK TIN/LEAD 1N4460-4496.PDF
1N4474 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 24V 1.5W TH DIODE-ZENER SINGLE:
Packaging: Box
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
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CMSZ5226B TR PBFREE
CMSZ5226B TR PBFREE
Виробник: Central Semiconductor Corp
Description: 3.3V 275MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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CMSZ5226B TR TIN/LEAD
CMSZ5226B TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 3.3V 275MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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CMZ5346BQ TR13 PBFREE cmz5342b.PDF
CMZ5346BQ TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: SURFACE MOUNT-DIODE-ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Grade: Automotive
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.07 грн
Мінімальне замовлення: 3000
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CMZ5346BQ TR13 PBFREE cmz5342b.PDF
CMZ5346BQ TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: SURFACE MOUNT-DIODE-ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Grade: Automotive
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.76 грн
10+33.00 грн
100+21.30 грн
500+15.27 грн
1000+13.74 грн
Мінімальне замовлення: 6
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CMZ5346B TR13 PBFREE
CMZ5346B TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 9.1V 10W SMD DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
товару немає в наявності
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CMZ5346B TR13 TIN/LEAD
CMZ5346B TR13 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 9.1V 10W SMD DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
товару немає в наявності
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1N759A TR TIN/LEAD
1N759A TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 12V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N759A BK TIN/LEAD
1N759A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 12V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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1N4619 BK TIN/LEAD
1N4619 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 3V 250MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 800 nA @ 1 V
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1N750A BK TIN/LEAD
1N750A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 4.7V 500MW TH DIODE-ZENER SINGLE
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 19 Ohms
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2N4125 PBFREE 2N4123-4126.PDF
2N4125 PBFREE
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 TRE PBFREE
2N4125 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 APM PBFREE
2N4125 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 TIN/LEAD 2N4123-4126.PDF
2N4125 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 TRE TIN/LEAD
2N4125 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125 APM TIN/LEAD
2N4125 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N3391A TRE PBFREE 2N3391A-3393.PDF
2N3391A TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N3391A APM PBFREE 2N3391A-3393.PDF
2N3391A APM PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N3391A TIN/LEAD LSSGP072.PDF
2N3391A TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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2N3391A TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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2N3391A APM TIN/LEAD LSSGP072.PDF
2N3391A APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 4.5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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2N708 TIN/LEAD
2N708 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 15V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 25µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: TO-18
Voltage - Collector Emitter Breakdown (Max): 15 V
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1N4618 TR TIN/LEAD 1N4614-4627.PDF
1N4618 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 2.7V 250MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Power - Max: 250 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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1N4618 BK TIN/LEAD 1N4614-4627.PDF
1N4618 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 2.7V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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1N965B TR TIN/LEAD 1N957B-992B.PDF
1N965B TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 15V 500MW TH DIODE-ZENER SINGLE:
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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