Продукція > CENTRAL SEMICONDUCTOR CORP > Всі товари виробника CENTRAL SEMICONDUCTOR CORP (7890) > Сторінка 130 з 132
| Фото | Назва | Виробник | Інформація |
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MPSA05 TRE PBFREE | Central Semiconductor Corp |
 Description: 60V 500MA 625MW TH TRANSISTOR-SMPackaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MPSA05 APM TIN/LEAD | Central Semiconductor Corp |
Description: 60V 500MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MPSA05 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 60V 500MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MPSA05 TIN/LEAD | Central Semiconductor Corp |
Description: 60V 500MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N5222B BK TIN/LEAD | Central Semiconductor Corp |
Description: 2.5V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 2.5 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P6SMB39A BK PBFREE | Central Semiconductor Corp |
Description: 600W 33.3V SMD TRANSIENT VOLTAGE Packaging: Box Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.2A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 2N6126 PBFREE | Central Semiconductor Corp |
Description: 80V 4A 40W TH TRANSISTOR-BIPOLAR Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V Frequency - Transition: 2.5MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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2N3702 APM PBFREE | Central Semiconductor Corp |
Description: 25V 200MA 360MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N3702 TRE PBFREE | Central Semiconductor Corp |
Description: 25V 200MA 360MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N3702 TIN/LEAD | Central Semiconductor Corp |
Description: 25V 200MA 360MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N3702 APM TIN/LEAD | Central Semiconductor Corp |
Description: 25V 200MA 360MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N3702 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 25V 200MA 360MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N6520 TIN/LEAD | Central Semiconductor Corp |
Description: 350V 500MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N6520 APM TIN/LEAD | Central Semiconductor Corp |
Description: 350V 500MA 625MW TH TRANSISTOR-S Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N6520 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 350V 500MA 625MW TH TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N958B BK TIN/LEAD | Central Semiconductor Corp |
Description: 7.5V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 5.5 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N958B TR TIN/LEAD | Central Semiconductor Corp |
Description: 7.5V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 5.5 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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C4SMAFL110A TR13 PBFREE | Central Semiconductor Corp |
Description: 400W 110V SMD TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.3A Voltage - Reverse Standoff (Typ): 110V Supplier Device Package: SMAflat Unidirectional Channels: 1 Voltage - Breakdown (Min): 122V Voltage - Clamping (Max) @ Ipp: 177V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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3SMC120CAQ TR13 PBFREE | Central Semiconductor Corp |
Description: TRANSIENT VOLTAGE SUPPRESSOR Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.6A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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3SMC120CAQ TR13 PBFREE | Central Semiconductor Corp |
Description: TRANSIENT VOLTAGE SUPPRESSOR Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.6A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| 2N6028 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 150 nA Voltage - Offset (Vt): 600 mV Current - Valley (Iv): 25 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 2N6028 APM TIN/LEAD | Central Semiconductor Corp |
Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 150 nA Voltage - Offset (Vt): 600 mV Current - Valley (Iv): 25 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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2N6028 TIN/LEAD | Central Semiconductor Corp |
Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Voltage - Output: 6V Voltage: 40V Current - Peak: 150 nA Voltage - Offset (Vt): 600 mV Current - Valley (Iv): 25 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 2N6028 APM PBFREE | Central Semiconductor Corp |
Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 150 nA Voltage - Offset (Vt): 600 mV Current - Valley (Iv): 25 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 2N6028 TRE PBFREE | Central Semiconductor Corp |
Description: 40V 150MA TH PROGRAMMABLE UJT Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Voltage - Output: 6V Voltage: 40V Current - Peak: 150 nA Voltage - Offset (Vt): 600 mV Current - Valley (Iv): 25 µA Current - Gate to Anode Leakage (Igao): 10 nA Power Dissipation (Max): 300 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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CZT32C TR | Central Semiconductor Corp |
Description: TRANS 100V 3A SOT-223 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N757A TR TIN/LEAD | Central Semiconductor Corp |
Description: 9.1V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N757A BK TIN/LEAD | Central Semiconductor Corp |
Description: 9.1V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4616 TR TIN/LEAD | Central Semiconductor Corp |
Description: 2.2V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 2.2 V Impedance (Max) (Zzt): 1300 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4616 BK TIN/LEAD | Central Semiconductor Corp |
Description: 2.2V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 2.2 V Impedance (Max) (Zzt): 1300 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4625 BK TIN/LEAD | Central Semiconductor Corp |
Description: 5.1V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1500 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4626 TR TIN/LEAD | Central Semiconductor Corp |
Description: 5.6V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1400 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4626 BK TIN/LEAD | Central Semiconductor Corp |
Description: 5.6V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1400 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4614 TR TIN/LEAD | Central Semiconductor Corp |
Description: 1.8V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 1.8 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4614 BK TIN/LEAD | Central Semiconductor Corp |
Description: 1.8V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 1.8 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4623 TR TIN/LEAD | Central Semiconductor Corp |
Description: 4.3V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 1600 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4623 BK TIN/LEAD | Central Semiconductor Corp |
Description: 4.3V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 1600 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
CMSSH-3C TR TIN/LEAD | Central Semiconductor Corp |
Description: 100MA 30V SMD DIODE-SCHOTTKY (<1 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| CR250-4 BK | Central Semiconductor Corp |
Description: DIODE STANDARD 4000V 200MA DO15 Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 4000 V Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 4000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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2N5249 TRE PBFREE | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA Current - Collector Cutoff (Max): 30nA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N5249 TIN/LEAD | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA Current - Collector Cutoff (Max): 30nA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N5249 TRE TIN/LEAD | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA Current - Collector Cutoff (Max): 30nA DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| CMJD0300 TR13 PBFREE | Central Semiconductor Corp |
Description: DIODE CUR REG 100V 420UA 445MW Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Applications: LED Driver Supplier Device Package: DFN123F Power - Max: 445mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 420µA Voltage - Limiting (Max): 800mV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CMJD0300 TR PBFREE | Central Semiconductor Corp |
Description: DIODE CUR REG 100V 420UA 445MW Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Applications: LED Driver Supplier Device Package: DFN123F Power - Max: 445mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 420µA Voltage - Limiting (Max): 800mV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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2N3903 TIN/LEAD | Central Semiconductor Corp |
Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N3903 APM PBFREE | Central Semiconductor Corp |
Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N3903 TRE PBFREE | Central Semiconductor Corp |
Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N3903 APM TIN/LEAD | Central Semiconductor Corp |
Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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2N3903 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 40V 200MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4099 TR TIN/LEAD | Central Semiconductor Corp |
Description: 6.8V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4099 BK TIN/LEAD | Central Semiconductor Corp |
Description: 6.8V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 1N4474 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 24V 1.5W DO41 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 1N4474 BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 24V 1.5W DO41 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
1N4474 TR TIN/LEAD | Central Semiconductor Corp |
Description: 24V 1.5W TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1N4474 BK TIN/LEAD | Central Semiconductor Corp |
Description: 24V 1.5W TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-41 Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CMSZ5226B TR PBFREE | Central Semiconductor Corp |
Description: 3.3V 275MW SMD DIODE-ZENER SINGL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-323 Power - Max: 275 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CMSZ5226B TR TIN/LEAD | Central Semiconductor Corp |
Description: 3.3V 275MW SMD DIODE-ZENER SINGL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-323 Power - Max: 275 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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CMZ5346BQ TR13 PBFREE | Central Semiconductor Corp |
Description: SURFACE MOUNT-DIODE-ZENER Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: SMC Grade: Automotive Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CMZ5346BQ TR13 PBFREE | Central Semiconductor Corp |
Description: SURFACE MOUNT-DIODE-ZENER Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: SMC Grade: Automotive Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CMZ5346B TR13 PBFREE | Central Semiconductor Corp |
Description: 9.1V 10W SMD DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: SMC Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MPSA05 TRE PBFREE |
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Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товару немає в наявності
В кошику
од. на суму грн.
| MPSA05 APM TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товару немає в наявності
В кошику
од. на суму грн.
| MPSA05 TRE TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товару немає в наявності
В кошику
од. на суму грн.
| MPSA05 TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товару немає в наявності
В кошику
од. на суму грн.
| 1N5222B BK TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: 2.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: 2.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB39A BK PBFREE |
Виробник: Central Semiconductor Corp
Description: 600W 33.3V SMD TRANSIENT VOLTAGE
Packaging: Box
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 33.3V SMD TRANSIENT VOLTAGE
Packaging: Box
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| 2N6126 PBFREE |
Виробник: Central Semiconductor Corp
Description: 80V 4A 40W TH TRANSISTOR-BIPOLAR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: 80V 4A 40W TH TRANSISTOR-BIPOLAR
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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| 2N3702 APM PBFREE |
Виробник: Central Semiconductor Corp
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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| 2N3702 TRE PBFREE |
Виробник: Central Semiconductor Corp
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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| 2N3702 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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| 2N3702 APM TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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| 2N3702 TRE TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 200MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50µA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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| 2N6520 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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| 2N6520 APM TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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| 2N6520 TRE TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
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| 1N958B BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V
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| 1N958B TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 5.7 V
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| C4SMAFL110A TR13 PBFREE |
Виробник: Central Semiconductor Corp
Description: 400W 110V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMAflat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: 400W 110V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMAflat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 400W
Power Line Protection: No
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| 3SMC120CAQ TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 77.90 грн |
| 3SMC120CAQ TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.84 грн |
| 10+ | 153.17 грн |
| 100+ | 106.62 грн |
| 500+ | 86.17 грн |
| 2N6028 TRE TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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| 2N6028 APM TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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| 2N6028 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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| 2N6028 APM PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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| 2N6028 TRE PBFREE |
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 150 nA
Voltage - Offset (Vt): 600 mV
Current - Valley (Iv): 25 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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| CZT32C TR |
|
Виробник: Central Semiconductor Corp
Description: TRANS 100V 3A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS 100V 3A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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| 1N757A TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 9.1V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: 9.1V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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| 1N757A BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 9.1V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: 9.1V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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| 1N4616 TR TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: 2.2V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Description: 2.2V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
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| 1N4616 BK TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: 2.2V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Description: 2.2V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 2.2 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
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| 1N4625 BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 5.1V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: 5.1V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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| 1N4626 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 5.6V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Description: 5.6V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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| 1N4626 BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 5.6V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Description: 5.6V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1400 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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| 1N4614 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 1.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Description: 1.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
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| 1N4614 BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 1.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Description: 1.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 1.8 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
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| 1N4623 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 4.3V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Description: 4.3V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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| 1N4623 BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 4.3V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Description: 4.3V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1600 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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| CMSSH-3C TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 100MA 30V SMD DIODE-SCHOTTKY (<1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: 100MA 30V SMD DIODE-SCHOTTKY (<1
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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| CR250-4 BK |
|
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 4000V 200MA DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Description: DIODE STANDARD 4000V 200MA DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
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| 2N5249 TRE PBFREE |
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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| 2N5249 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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| 2N5249 TRE TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
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| CMJD0300 TR13 PBFREE |
Виробник: Central Semiconductor Corp
Description: DIODE CUR REG 100V 420UA 445MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 445mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 420µA
Voltage - Limiting (Max): 800mV
Description: DIODE CUR REG 100V 420UA 445MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 445mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 420µA
Voltage - Limiting (Max): 800mV
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| CMJD0300 TR PBFREE |
Виробник: Central Semiconductor Corp
Description: DIODE CUR REG 100V 420UA 445MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 445mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 420µA
Voltage - Limiting (Max): 800mV
Description: DIODE CUR REG 100V 420UA 445MW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: LED Driver
Supplier Device Package: DFN123F
Power - Max: 445mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 420µA
Voltage - Limiting (Max): 800mV
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| 2N3903 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N3903 APM PBFREE |
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N3903 TRE PBFREE |
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N3903 APM TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N3903 TRE TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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В кошику
од. на суму грн.
| 1N4099 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 6.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Description: 6.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
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| 1N4099 BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 6.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Description: 6.8V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
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| 1N4474 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 24V 1.5W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Description: DIODE ZENER 24V 1.5W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
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| 1N4474 BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 24V 1.5W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Description: DIODE ZENER 24V 1.5W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
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од. на суму грн.
| 1N4474 TR TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: 24V 1.5W TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Description: 24V 1.5W TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
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| 1N4474 BK TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: 24V 1.5W TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
Description: 24V 1.5W TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 50 nA @ 19.2 V
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| CMSZ5226B TR PBFREE |
Виробник: Central Semiconductor Corp
Description: 3.3V 275MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: 3.3V 275MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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| CMSZ5226B TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 3.3V 275MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: 3.3V 275MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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| CMZ5346BQ TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: SURFACE MOUNT-DIODE-ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Grade: Automotive
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Qualification: AEC-Q101
Description: SURFACE MOUNT-DIODE-ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Grade: Automotive
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.67 грн |
| CMZ5346BQ TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: SURFACE MOUNT-DIODE-ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Grade: Automotive
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Qualification: AEC-Q101
Description: SURFACE MOUNT-DIODE-ZENER
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Grade: Automotive
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.28 грн |
| 10+ | 34.51 грн |
| 100+ | 22.27 грн |
| 500+ | 15.97 грн |
| 1000+ | 14.37 грн |
| CMZ5346B TR13 PBFREE |
Виробник: Central Semiconductor Corp
Description: 9.1V 10W SMD DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
Description: 9.1V 10W SMD DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMC
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 6.9 V
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