Продукція > CENTRAL SEMICONDUCTOR CORP > Всі товари виробника CENTRAL SEMICONDUCTOR CORP (8171) > Сторінка 113 з 137

Виробник: Central Semiconductor Corp
Description: CENTRAL
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-39
Voltage - Collector Emitter Breakdown (Max): 80 V

Виробник: Central Semiconductor Corp
Description: SUPER JUNCTION MOSFETS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 400 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 180V 500MW DO35A
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-35A
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 15V 1W MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V

Виробник: Central Semiconductor Corp
Description: TRANS PNP 45V 0.03A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW

Виробник: Central Semiconductor Corp
Description: TRANS PNP 45V 0.03A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500µA, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW

Виробник: Central Semiconductor Corp
Description: TRANS PNP 45V 0.03A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Supplier Device Package: Die
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW

Виробник: Central Semiconductor Corp
Description: SUPER JUNCTION MOSFETS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V

Виробник: Central Semiconductor Corp
Description: SCR 800V 12A D2PAK
Packaging: Box
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A @ 60Hz
Current - On State (It (AV)) (Max): 24 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: D2PAK
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V

Виробник: Central Semiconductor Corp
Description: SCR 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A @ 60Hz
Current - On State (It (AV)) (Max): 24 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: D2PAK
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V

Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 400V 2A A CASE
Packaging: Box
Package / Case: 4-Circular, A Case
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: A Case
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V

Виробник: Central Semiconductor Corp
Description: SURFACE MOUNT MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-CSP (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V

Виробник: Central Semiconductor Corp
Description: SURFACE MOUNT MOSFET
Packaging: Cut Tape (CT)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-CSP (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V

Виробник: Central Semiconductor Corp
Description: DIODE ARRAY GP 240V 225MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 225mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V

Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 240V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V

Виробник: Central Semiconductor Corp
Description: TVS DIODE 26VWM 42.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.6A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 26VWM 42.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.6A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 26VWM 42.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 26VWM 42.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 3.9V 300MW SOD523
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 3.9V 300MW SOD523
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-523
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V

Виробник: Central Semiconductor Corp
Description: TRANS 2PNP 50MA 60V TO78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 600mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-78-6

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 68V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 52 V

Виробник: Central Semiconductor Corp
Description: TRANS NPN 90V 20A TO-3
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5A, 20A
Current - Collector Cutoff (Max): 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 140 W

Виробник: Central Semiconductor Corp
Description: TVS DIODE 77.8VWM 125VC SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 77.8VWM 125VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 77.8VWM 125VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V

Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 5A DO201AD
Packaging: Box
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V

Виробник: Central Semiconductor Corp
Description: DIODE ARR SCHOT 40V 200MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 330 mV @ 2 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V

Виробник: Central Semiconductor Corp
Description: DIODE ARR SCHOT 40V 200MA SOT563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-563
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 330 mV @ 2 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V

Виробник: Central Semiconductor Corp
Description: DIODE SCHOTTKY 40V 500MA DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V

Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 40V 5A 4SMDIP
Packaging: Bulk
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -50°C ~ 125°C
Technology: Schottky
Supplier Device Package: 4-SMDIP
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 5 A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 40 V

Виробник: Central Semiconductor Corp
Description: SCR 30V 800MA TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 30 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 5.1V 500MW SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 5.1V 500MW SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SMA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V

Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W

Виробник: Central Semiconductor Corp
Description: TVS DIODE 77.8VWM 125VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 11VWM 18.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 11VWM 18.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 43VWM 69.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 43VWM 69.4VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 36V 5W DO201
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 36V 5W DO201
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 56V 1W MELF
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 42.6 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 56V 1W MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 42.6 V

Виробник: Central Semiconductor Corp
Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Power - Max: 600mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-78-6

Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 100V 3A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V

Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 100V 3A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V

Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 100V 3A SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 14V 500MW SOD80
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V

Виробник: Central Semiconductor Corp
Description: DIODE ARRAY GP 120V 400MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V

Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 120V 400MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 0V, 1MHz
Current - Average Rectified (Io): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 90 V

Виробник: Central Semiconductor Corp
Description: TVS DIODE 25.6VWM 41.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 30VWM 48.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: TVS DIODE 30VWM 48.4VC SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No

Виробник: Central Semiconductor Corp
Description: DIODE ZENER 200V 1W DO-41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 2500 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 152 V

Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V