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2N5210 TRA PBFREE Central Semiconductor Corp Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
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2N5210 APP PBFREE Central Semiconductor Corp 2N5209-10.PDF Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
товару немає в наявності
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2N5210 APM PBFREE 2N5210 APM PBFREE Central Semiconductor Corp 2N5209-10.PDF Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N5210 TRE PBFREE 2N5210 TRE PBFREE Central Semiconductor Corp 2N5209-10.PDF Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
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2N5210 TRA TIN/LEAD Central Semiconductor Corp Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товару немає в наявності
 Мінімальне замовлення: 6000 шт
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2N5210 APP TIN/LEAD Central Semiconductor Corp 2N5209-10.PDF Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
товару немає в наявності
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2N2857 TIN/LEAD 2N2857 TIN/LEAD Central Semiconductor Corp Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: TO-72
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2N5179 TIN/LEAD Central Semiconductor Corp Description: 12V 50MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 15dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Supplier Device Package: TO-72
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2N3839 TIN/LEAD 2N3839 TIN/LEAD Central Semiconductor Corp Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Supplier Device Package: TO-72
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 40mA
Power - Max: 300mW
Gain: 19dB
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Box
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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2N3839 PBFREE 2N3839 PBFREE Central Semiconductor Corp Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Box
Supplier Device Package: TO-72
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 40mA
Power - Max: 300mW
Gain: 19dB
Operating Temperature: -65°C ~ 200°C (TJ)
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2N3053A TIN/LEAD Central Semiconductor Corp Description: 60V 700MA 5W TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
товару немає в наявності
 Мінімальне замовлення: 500 шт
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2N930B PBFREE Central Semiconductor Corp Description: 45V 30MA 500MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 45MHz
Supplier Device Package: TO-18
Voltage - Collector Emitter Breakdown (Max): 45 V
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2N930B TIN/LEAD Central Semiconductor Corp Description: 45V 30MA 500MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 45MHz
Supplier Device Package: TO-18
Voltage - Collector Emitter Breakdown (Max): 45 V
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BCY58-IX PBFREE BCY58-IX PBFREE Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 340 mW
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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BCY58-X PBFREE BCY58-X PBFREE Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 340 mW
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 Мінімальне замовлення: 2000 шт
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BCY58-VIII PBFREE BCY58-VIII PBFREE Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Supplier Device Package: TO-18
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
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BCY58-VII PBFREE BCY58-VII PBFREE Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
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BCY58-IX TIN/LEAD BCY58-IX TIN/LEAD Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Transistor Type: NPN
Mounting Type: Through Hole
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
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BCY58-VIII TIN/LEAD BCY58-VIII TIN/LEAD Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
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 Мінімальне замовлення: 2000 шт
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BCY58-X TIN/LEAD BCY58-X TIN/LEAD Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
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 Мінімальне замовлення: 2000 шт
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BCY58-VII TIN/LEAD BCY58-VII TIN/LEAD Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
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 Мінімальне замовлення: 2000 шт
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2N4036 TIN/LEAD 2N4036 TIN/LEAD Central Semiconductor Corp Description: 65V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 1 W
товару немає в наявності
 Мінімальне замовлення: 500 шт
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1N4936 BK TIN/LEAD 1N4936 BK TIN/LEAD Central Semiconductor Corp LSSGP154.PDF Description: 1A 400V TH RECTIFIER-FAST RECOVE
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N4936 TR TIN/LEAD 1N4936 TR TIN/LEAD Central Semiconductor Corp LSSGP154.PDF Description: 1A 400V TH RECTIFIER-FAST RECOVE
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N5241B BK TIN/LEAD 1N5241B BK TIN/LEAD Central Semiconductor Corp Description: 11V 500MW TH DIODE-ZENER SINGLE:
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
товару немає в наявності
 Мінімальне замовлення: 22500 шт
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CMPT4209 TR PBFREE CMPT4209 TR PBFREE Central Semiconductor Corp Description: 15V 200MA 350MW SMD TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV
Frequency - Transition: 850MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 350 mW
товару немає в наявності
 Мінімальне замовлення: 6000 шт
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1N971B TR PBFREE Central Semiconductor Corp 1N957B-992B.PDF Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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1N971B BK PBFREE Central Semiconductor Corp 1N957B-992B.PDF Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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 Мінімальне замовлення: 12500 шт
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1N971B BK TIN/LEAD 1N971B BK TIN/LEAD Central Semiconductor Corp Description: 27V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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1N971B TR TIN/LEAD 1N971B TR TIN/LEAD Central Semiconductor Corp Description: 27V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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MPSA55 PBFREE MPSA55 PBFREE Central Semiconductor Corp Description: 60V 500MA 625MW TH TRANSISTOR-SM
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
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MPSA55 TRE PBFREE MPSA55 TRE PBFREE Central Semiconductor Corp Description: 60V 500MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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MPSA55 APM PBFREE MPSA55 APM PBFREE Central Semiconductor Corp Description: 60V 500MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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MPSA55 TIN/LEAD MPSA55 TIN/LEAD Central Semiconductor Corp Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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MPSA55 APM TIN/LEAD MPSA55 APM TIN/LEAD Central Semiconductor Corp Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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MPSA55 TRE TIN/LEAD MPSA55 TRE TIN/LEAD Central Semiconductor Corp Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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2N5416 TIN/LEAD 2N5416 TIN/LEAD Central Semiconductor Corp Description: 300V 1A 1W TH TRANSISTOR-SMALL S
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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 Мінімальне замовлення: 500 шт
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CXT5551HC TR PBFREE Central Semiconductor Corp Description: 160V 1A 1.2W SMD TRANSISTOR-SMAL
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.2 W
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2N3393 APM PBFREE 2N3393 APM PBFREE Central Semiconductor Corp LSSGP072.PDF Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 4.5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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BF393 APM PBFREE Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
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PN4393 APM PBFREE Central Semiconductor Corp Description: .5V 3V 50MA 625MW TH JFET N CHAN
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
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CMPT6520 TR PBFREE CMPT6520 TR PBFREE Central Semiconductor Corp CMPT6517&20.PDF Description: 350V 500MA 350MW SMD TRANSISTOR-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 350 mW
товару немає в наявності
 Мінімальне замовлення: 12000 шт
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2N6520 TRE PBFREE Central Semiconductor Corp Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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2N6520 APM PBFREE 2N6520 APM PBFREE Central Semiconductor Corp 2N6515-6520.PDF Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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CMSH5-20 TR13 PBFREE CMSH5-20 TR13 PBFREE Central Semiconductor Corp Description: 5A 20V SMD RECTIFIER-SCHOTTKY (>
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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CMSH5-20 BK PBFREE CMSH5-20 BK PBFREE Central Semiconductor Corp Description: 5A 20V SMD RECTIFIER-SCHOTTKY (>
Packaging: Box
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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CMHD459A TR PBFREE CMHD459A TR PBFREE Central Semiconductor Corp Description: 200MA 200V SMD DIODE-LOW LEAKAGE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 200 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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2N2405 TIN/LEAD 2N2405 TIN/LEAD Central Semiconductor Corp 2N2405.PDF Description: 90V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
Frequency - Transition: 120MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 1 W
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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2N2484 TIN/LEAD 2N2484 TIN/LEAD Central Semiconductor Corp 2n2484.PDF Description: 60V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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2N6517 PBFREE Central Semiconductor Corp Description: 350V 500MA 625MW TH TRANSISTOR-S
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
товару немає в наявності
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2N6517 APM PBFREE Central Semiconductor Corp Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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2N6517 TRE PBFREE Central Semiconductor Corp Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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 Мінімальне замовлення: 2000 шт
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2N6517 TIN/LEAD Central Semiconductor Corp Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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 Мінімальне замовлення: 2500 шт
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2N6517 TRE TIN/LEAD Central Semiconductor Corp Description: 350V 500MA 625MW TH TRANSISTOR-S
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
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2N6517 APM TIN/LEAD Central Semiconductor Corp Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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1.5CE130A BK PBFREE Central Semiconductor Corp 1.5CE6.8CA-400CA.PDF Description: TVS DIODE 111VWM 179VC DO201
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 123.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 111V
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1.5CE13A BK PBFREE Central Semiconductor Corp 1.5CE6.8CA-400CA.PDF Description: TVS DIODE 11.1VWM 18.2VC DO201
Current - Peak Pulse (10/1000µs): 82A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 11.1V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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2N5060 TRE PBFREE 2N5060 TRE PBFREE Central Semiconductor Corp Description: .8A 30V TH SCR
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Voltage - Off State: 30 V
Current - On State (It (RMS)) (Max): 800 mA
Supplier Device Package: TO-92-3
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
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2N5060 APM PBFREE 2N5060 APM PBFREE Central Semiconductor Corp Description: .8A 30V TH SCR
Voltage - Off State: 30 V
Current - On State (It (RMS)) (Max): 800 mA
Supplier Device Package: TO-92-3
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N5060 TIN/LEAD 2N5060 TIN/LEAD Central Semiconductor Corp Description: .8A 30V TH SCR
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Voltage - Off State: 30 V
Current - On State (It (RMS)) (Max): 800 mA
Supplier Device Package: TO-92-3
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
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2N5210 TRA PBFREE
Виробник: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N5210 APP PBFREE 2N5209-10.PDF
Виробник: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
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2N5210 APM PBFREE 2N5209-10.PDF
2N5210 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N5210 TRE PBFREE 2N5209-10.PDF
2N5210 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N5210 TRA TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N5210 APP TIN/LEAD 2N5209-10.PDF
Виробник: Central Semiconductor Corp
Description: 50V 50MA 350MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
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2N2857 TIN/LEAD
2N2857 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 12.5dB ~ 19dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Frequency - Transition: 1.9GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Supplier Device Package: TO-72
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2N5179 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 12V 50MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 15dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Supplier Device Package: TO-72
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2N3839 TIN/LEAD
2N3839 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Supplier Device Package: TO-72
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 40mA
Power - Max: 300mW
Gain: 19dB
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Box
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Мінімальне замовлення: 2000 шт
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2N3839 PBFREE
2N3839 PBFREE
Виробник: Central Semiconductor Corp
Description: 15V 40MA 200MW TH TRANSISTOR-SMA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Box
Supplier Device Package: TO-72
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Frequency - Transition: 2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 40mA
Power - Max: 300mW
Gain: 19dB
Operating Temperature: -65°C ~ 200°C (TJ)
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2N3053A TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 700MA 5W TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
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Мінімальне замовлення: 500 шт
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2N930B PBFREE
Виробник: Central Semiconductor Corp
Description: 45V 30MA 500MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 45MHz
Supplier Device Package: TO-18
Voltage - Collector Emitter Breakdown (Max): 45 V
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2N930B TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 30MA 500MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 45MHz
Supplier Device Package: TO-18
Voltage - Collector Emitter Breakdown (Max): 45 V
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BCY58-IX PBFREE
BCY58-IX PBFREE
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 340 mW
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Мінімальне замовлення: 2000 шт
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BCY58-X PBFREE
BCY58-X PBFREE
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 340 mW
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Мінімальне замовлення: 2000 шт
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BCY58-VIII PBFREE
BCY58-VIII PBFREE
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Supplier Device Package: TO-18
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
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Мінімальне замовлення: 2000 шт
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BCY58-VII PBFREE
BCY58-VII PBFREE
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
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BCY58-IX TIN/LEAD
BCY58-IX TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Transistor Type: NPN
Mounting Type: Through Hole
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
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Мінімальне замовлення: 2000 шт
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BCY58-VIII TIN/LEAD
BCY58-VIII TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
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Мінімальне замовлення: 2000 шт
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BCY58-X TIN/LEAD
BCY58-X TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
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Мінімальне замовлення: 2000 шт
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BCY58-VII TIN/LEAD
BCY58-VII TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
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Мінімальне замовлення: 2000 шт
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2N4036 TIN/LEAD
2N4036 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 65V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 1 W
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Мінімальне замовлення: 500 шт
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1N4936 BK TIN/LEAD LSSGP154.PDF
1N4936 BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 1A 400V TH RECTIFIER-FAST RECOVE
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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Мінімальне замовлення: 10000 шт
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1N4936 TR TIN/LEAD LSSGP154.PDF
1N4936 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 1A 400V TH RECTIFIER-FAST RECOVE
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N5241B BK TIN/LEAD
1N5241B BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 11V 500MW TH DIODE-ZENER SINGLE:
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 11 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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Мінімальне замовлення: 22500 шт
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CMPT4209 TR PBFREE
CMPT4209 TR PBFREE
Виробник: Central Semiconductor Corp
Description: 15V 200MA 350MW SMD TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV
Frequency - Transition: 850MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 350 mW
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Мінімальне замовлення: 6000 шт
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1N971B TR PBFREE 1N957B-992B.PDF
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
товару немає в наявності
Мінімальне замовлення: 20000 шт
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1N971B BK PBFREE 1N957B-992B.PDF
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
товару немає в наявності
Мінімальне замовлення: 12500 шт
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1N971B BK TIN/LEAD
1N971B BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 27V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
1N971B TR TIN/LEAD
1N971B TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 27V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
MPSA55 PBFREE
MPSA55 PBFREE
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
MPSA55 TRE PBFREE
MPSA55 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
MPSA55 APM PBFREE
MPSA55 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
MPSA55 TIN/LEAD
MPSA55 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
MPSA55 APM TIN/LEAD
MPSA55 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
MPSA55 TRE TIN/LEAD
MPSA55 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
2N5416 TIN/LEAD
2N5416 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 300V 1A 1W TH TRANSISTOR-SMALL S
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
CXT5551HC TR PBFREE
Виробник: Central Semiconductor Corp
Description: 160V 1A 1.2W SMD TRANSISTOR-SMAL
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.2 W
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
2N3393 APM PBFREE LSSGP072.PDF
2N3393 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 4.5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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В кошику  од. на суму  грн.
BF393 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PN4393 APM PBFREE
Виробник: Central Semiconductor Corp
Description: .5V 3V 50MA 625MW TH JFET N CHAN
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-92-3
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CMPT6520 TR PBFREE CMPT6517&20.PDF
CMPT6520 TR PBFREE
Виробник: Central Semiconductor Corp
Description: 350V 500MA 350MW SMD TRANSISTOR-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 350 mW
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику  од. на суму  грн.
2N6520 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
2N6520 APM PBFREE 2N6515-6520.PDF
2N6520 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
CMSH5-20 TR13 PBFREE
CMSH5-20 TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 5A 20V SMD RECTIFIER-SCHOTTKY (>
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
CMSH5-20 BK PBFREE
CMSH5-20 BK PBFREE
Виробник: Central Semiconductor Corp
Description: 5A 20V SMD RECTIFIER-SCHOTTKY (>
Packaging: Box
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику  од. на суму  грн.
CMHD459A TR PBFREE
CMHD459A TR PBFREE
Виробник: Central Semiconductor Corp
Description: 200MA 200V SMD DIODE-LOW LEAKAGE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2N2405 TIN/LEAD 2N2405.PDF
2N2405 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 90V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
Frequency - Transition: 120MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
2N2484 TIN/LEAD 2n2484.PDF
2N2484 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N6517 PBFREE
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
2N6517 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N6517 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N6517 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
2N6517 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
2N6517 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 350V 500MA 625MW TH TRANSISTOR-S
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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Мінімальне замовлення: 2000 шт
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1.5CE130A BK PBFREE 1.5CE6.8CA-400CA.PDF
Виробник: Central Semiconductor Corp
Description: TVS DIODE 111VWM 179VC DO201
Current - Peak Pulse (10/1000µs): 8.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 179V
Voltage - Breakdown (Min): 123.5V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 111V
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Мінімальне замовлення: 3000 шт
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1.5CE13A BK PBFREE 1.5CE6.8CA-400CA.PDF
Виробник: Central Semiconductor Corp
Description: TVS DIODE 11.1VWM 18.2VC DO201
Current - Peak Pulse (10/1000µs): 82A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Unidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 11.1V
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Мінімальне замовлення: 3000 шт
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2N5060 TRE PBFREE
2N5060 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: .8A 30V TH SCR
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Voltage - Off State: 30 V
Current - On State (It (RMS)) (Max): 800 mA
Supplier Device Package: TO-92-3
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
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Мінімальне замовлення: 4000 шт
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2N5060 APM PBFREE
2N5060 APM PBFREE
Виробник: Central Semiconductor Corp
Description: .8A 30V TH SCR
Voltage - Off State: 30 V
Current - On State (It (RMS)) (Max): 800 mA
Supplier Device Package: TO-92-3
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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Мінімальне замовлення: 4000 шт
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2N5060 TIN/LEAD
2N5060 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: .8A 30V TH SCR
SCR Type: Sensitive Gate
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Voltage - Off State: 30 V
Current - On State (It (RMS)) (Max): 800 mA
Supplier Device Package: TO-92-3
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.7 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 510 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C (TJ)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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