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TIP36 Central Semiconductor Corp TIP35.PDF Description: TRANS PNP 40V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 125 W
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TIP36B SL Central Semiconductor Corp TIP35.PDF Description: TRANS PNP 80V 25A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
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TIP36C SL TIP36C SL Central Semiconductor Corp TIP35.PDF Description: TRANS PNP 100V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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BDW84C Central Semiconductor Corp LSSGP091.PDF Description: TRANS PNP 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 130 W
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CS48-35B Central Semiconductor Corp CS48-35B,D,M,N,P,PB.pdf Description: SCR 200V 35A TO48
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CS48-35D Central Semiconductor Corp CS48-35B,D,M,N,P,PB.pdf Description: SCR 400V 35A TO48
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CS48-35N Central Semiconductor Corp CS48-35B,D,M,N,P,PB.pdf Description: SCR PHASE CONTROL TO48
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2N685A Central Semiconductor Corp 2N681(A)%20thru%202N692(A).pdf Description: SCR 200V 25A TO48
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CMUT5401E TR Central Semiconductor Corp CMUT5401E.PDF Description: TRANS PNP 220V 0.6A SOT523
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW
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CMUT5551E TR CMUT5551E TR Central Semiconductor Corp CMUSH05-4.PDF Description: TRANS NPN 220V 0.6A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW
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CXT5551E TR Central Semiconductor Corp get_document.php?cmp=1&mergetype=pd&mergepath=pd&pdf_id=CXT5551E.PDF Description: TRANS PNP
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CZT5551E TR Central Semiconductor Corp CZT5551E.PDF Description: TRANS NPN 220V 0.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 2 W
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CMUT5401E BK Central Semiconductor Corp CMUT5401E.PDF Description: TRANS PNP 220V 0.6A SOT523
Packaging: Bulk
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW
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CMUT5551E BK Central Semiconductor Corp XLamp-CMU1516.pdf Description: TRANS NPN 220V 0.6A SOT523
Packaging: Bulk
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW
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CXT5551E BK Central Semiconductor Corp get_document.php?cmp=1&mergetype=pd&mergepath=pd&pdf_id=CXT5551E.PDF Description: TRANS PNP
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CZT5551E BK Central Semiconductor Corp CZT5551E.PDF Description: TRANS NPN 220V 0.6A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 2 W
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CBR6-010 CBR6-010 Central Semiconductor Corp CBR6-010_SERIES.PDF Description: BRIDGE RECT 1PHASE 100V 6A CM
Packaging: Bulk
Package / Case: 4-Square, CM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: CM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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CBR6-100 CBR6-100 Central Semiconductor Corp CBR6-010_SERIES.PDF Description: BRIDGE RECT 1PHASE 1KV 6A CM
Packaging: Bulk
Package / Case: 4-Square, CM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: CM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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CN4157 TR Central Semiconductor Corp C1N4156,%20CN4157,%20CN5179.pdf Description: DIODE MULTI CHIP DO-35
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CN4157 BK Central Semiconductor Corp C1N4156,%20CN4157,%20CN5179.pdf Description: DIODE MULTI CHIP DO-35
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CN5179 BK Central Semiconductor Corp C1N4156,%20CN4157,%20CN5179.pdf Description: DIODE MULTI CHIP DO-35
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CDM2206-800LR SL PBFREE CDM2206-800LR SL PBFREE Central Semiconductor Corp CDM2206-800LR.pdf Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
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1N4007 TR 1N4007 TR Central Semiconductor Corp 1N4001.PDF Description: DIODE STANDARD 1000V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N4007 BK 1N4007 BK Central Semiconductor Corp 1N4001.PDF Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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CPD65-BAV45-CT Central Semiconductor Corp CPD65-BAV45_WPD.PDF Description: DIODE STANDARD 20V 50MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 1.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 pA @ 5 V
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1N4004GPP BK 1N4004GPP BK Central Semiconductor Corp 1N4001GPP.PDF Description: DIODE GEN PURP 400V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N4005GPP BK 1N4005GPP BK Central Semiconductor Corp 1N4001GPP.PDF Description: DIODE STANDARD 600V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4007GPP BK 1N4007GPP BK Central Semiconductor Corp 1N4001GPP.PDF Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N4003GL TR 1N4003GL TR Central Semiconductor Corp Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N4004GPP TR 1N4004GPP TR Central Semiconductor Corp 1N4001GPP.PDF Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N4005GPP TR 1N4005GPP TR Central Semiconductor Corp 1N4001GPP.PDF Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4007GPP TR 1N4007GPP TR Central Semiconductor Corp 1N4001GPP.PDF Description: DIODE STANDARD 1000V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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H11C4M Central Semiconductor Corp H11C4M.pdf Description: OPTOISOLATOR 5KV SCR 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: SCR
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Voltage - Isolation: 5000Vrms
Current - Hold (Ih): 500µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 20mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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2N5192 SL H 2N5192 SL H Central Semiconductor Corp 2N5190-5192.pdf Description: TRANS NPN 80V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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2N5195 SL H 2N5195 SL H Central Semiconductor Corp 2N5193-5195.pdf Description: TRANS PNP 80V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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2N5190 2N5190 Central Semiconductor Corp 2N5190-5192.pdf Description: TRANS NPN 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
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2N5192R 2N5192R Central Semiconductor Corp 2N5190-5192.pdf Description: TRANS NPN 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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1N4001G BK 1N4001G BK Central Semiconductor Corp 1N4001G%20-%201N4007G.pdf Description: DIODE GEN PURPOSE DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
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1N4003G BK 1N4003G BK Central Semiconductor Corp 1N4001G%20-%201N4007G.pdf Description: DIODE GEN PURPOSE DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
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1N4004G BK Central Semiconductor Corp 1N4001G%20-%201N4007G.pdf Description: DIODE GEN PURP 400V 1A DO41
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TIP47 SL TIP47 SL Central Semiconductor Corp TIP47-TIP50.pdf Description: TRANS NPN 250V 1A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W
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TIP112 TIN/LEAD TIP112 TIN/LEAD Central Semiconductor Corp TIP110-TIP112.PDF Description: TRANS NPN DARL 100V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 100 V
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TIP117 TIN/LEAD TIP117 TIN/LEAD Central Semiconductor Corp TIP110-TIP112.PDF Description: TRANS PNP DARL 100V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Voltage - Collector Emitter Breakdown (Max): 100 V
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TIP131 TIP131 Central Semiconductor Corp LSSGP094.PDF Description: TRANS NPN DARL 80V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 70 W
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TIP135 TIP135 Central Semiconductor Corp LSSGP094.PDF Description: TRANS PNP DARL 60V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 70 W
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UF4001 BK UF4001 BK Central Semiconductor Corp UF4001-UF4007.PDF Description: DIODE STANDARD 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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UF4002 BK UF4002 BK Central Semiconductor Corp UF4001-UF4007.PDF Description: DIODE STANDARD 100V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UF4003 BK UF4003 BK Central Semiconductor Corp UF4001-UF4007.PDF Description: DIODE GEN PURP 200V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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UF4004 BK UF4004 BK Central Semiconductor Corp UF4001-UF4007.PDF Description: DIODE STANDARD 400V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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UF4005 BK UF4005 BK Central Semiconductor Corp UF4001-UF4007.PDF Description: DIODE STANDARD 600V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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UF4006 BK UF4006 BK Central Semiconductor Corp UF4001-UF4007.PDF Description: DIODE STANDARD 800V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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UF4007 BK UF4007 BK Central Semiconductor Corp UF4001-UF4007.PDF Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
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2N2907A W/GOLD 2N2907A W/GOLD Central Semiconductor Corp 2N2906.PDF Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-18
Part Status: Obsolete
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2N4033 W/GOLD 2N4033 W/GOLD Central Semiconductor Corp 2N4033.PDF Description: TRANS PNP 80V 1A TO-39
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-39
Part Status: Obsolete
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2N4036 W/GOLD 2N4036 W/GOLD Central Semiconductor Corp 2N4036.PDF Description: TRANS PNP 65V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-39
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TIP125 SL TIP125 SL Central Semiconductor Corp TIP120-TIP122.PDF Description: TRANS PNP DARL 60V TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 60 V
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TIP112 PBFREE TIP112 PBFREE Central Semiconductor Corp TIP110-TIP112.PDF Description: TRANS NPN DARL 100V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 100 V
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TIP117 PBFREE TIP117 PBFREE Central Semiconductor Corp TIP110-TIP112.PDF Description: TRANS NPN DARL 100V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Voltage - Collector Emitter Breakdown (Max): 100 V
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1N4729A BK 1N4729A BK Central Semiconductor Corp 1N4728A-4764A.PDF Description: DIODE ZENER 3.6V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N4730A BK 1N4730A BK Central Semiconductor Corp 1N4728A-4764A.PDF Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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TIP36 TIP35.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 40V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 125 W
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TIP36B SL TIP35.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 80V 25A TO218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
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TIP36C SL TIP35.PDF
TIP36C SL
Виробник: Central Semiconductor Corp
Description: TRANS PNP 100V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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BDW84C LSSGP091.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Supplier Device Package: TO-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 130 W
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CS48-35B CS48-35B,D,M,N,P,PB.pdf
Виробник: Central Semiconductor Corp
Description: SCR 200V 35A TO48
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CS48-35D CS48-35B,D,M,N,P,PB.pdf
Виробник: Central Semiconductor Corp
Description: SCR 400V 35A TO48
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CS48-35N CS48-35B,D,M,N,P,PB.pdf
Виробник: Central Semiconductor Corp
Description: SCR PHASE CONTROL TO48
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2N685A 2N681(A)%20thru%202N692(A).pdf
Виробник: Central Semiconductor Corp
Description: SCR 200V 25A TO48
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CMUT5401E TR CMUT5401E.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 220V 0.6A SOT523
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW
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CMUT5551E TR CMUSH05-4.PDF
CMUT5551E TR
Виробник: Central Semiconductor Corp
Description: TRANS NPN 220V 0.6A SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW
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CXT5551E TR get_document.php?cmp=1&mergetype=pd&mergepath=pd&pdf_id=CXT5551E.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP
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CZT5551E TR CZT5551E.PDF
Виробник: Central Semiconductor Corp
Description: TRANS NPN 220V 0.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 2 W
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CMUT5401E BK CMUT5401E.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP 220V 0.6A SOT523
Packaging: Bulk
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW
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CMUT5551E BK XLamp-CMU1516.pdf
Виробник: Central Semiconductor Corp
Description: TRANS NPN 220V 0.6A SOT523
Packaging: Bulk
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-523
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 250 mW
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CXT5551E BK get_document.php?cmp=1&mergetype=pd&mergepath=pd&pdf_id=CXT5551E.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP
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CZT5551E BK CZT5551E.PDF
Виробник: Central Semiconductor Corp
Description: TRANS NPN 220V 0.6A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 220 V
Power - Max: 2 W
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CBR6-010 CBR6-010_SERIES.PDF
CBR6-010
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 100V 6A CM
Packaging: Bulk
Package / Case: 4-Square, CM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: CM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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CBR6-100 CBR6-010_SERIES.PDF
CBR6-100
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 1KV 6A CM
Packaging: Bulk
Package / Case: 4-Square, CM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: CM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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CN4157 TR C1N4156,%20CN4157,%20CN5179.pdf
Виробник: Central Semiconductor Corp
Description: DIODE MULTI CHIP DO-35
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CN4157 BK C1N4156,%20CN4157,%20CN5179.pdf
Виробник: Central Semiconductor Corp
Description: DIODE MULTI CHIP DO-35
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CN5179 BK C1N4156,%20CN4157,%20CN5179.pdf
Виробник: Central Semiconductor Corp
Description: DIODE MULTI CHIP DO-35
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CDM2206-800LR SL PBFREE CDM2206-800LR.pdf
CDM2206-800LR SL PBFREE
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
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1N4007 TR 1N4001.PDF
1N4007 TR
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N4007 BK 1N4001.PDF
1N4007 BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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CPD65-BAV45-CT CPD65-BAV45_WPD.PDF
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 20V 50MA DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 1.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 pA @ 5 V
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1N4004GPP BK 1N4001GPP.PDF
1N4004GPP BK
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N4005GPP BK 1N4001GPP.PDF
1N4005GPP BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 600V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4007GPP BK 1N4001GPP.PDF
1N4007GPP BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N4003GL TR
1N4003GL TR
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N4004GPP TR 1N4001GPP.PDF
1N4004GPP TR
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N4005GPP TR 1N4001GPP.PDF
1N4005GPP TR
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4007GPP TR 1N4001GPP.PDF
1N4007GPP TR
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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H11C4M H11C4M.pdf
Виробник: Central Semiconductor Corp
Description: OPTOISOLATOR 5KV SCR 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: SCR
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Voltage - Isolation: 5000Vrms
Current - Hold (Ih): 500µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 20mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
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2N5192 SL H 2N5190-5192.pdf
2N5192 SL H
Виробник: Central Semiconductor Corp
Description: TRANS NPN 80V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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2N5195 SL H 2N5193-5195.pdf
2N5195 SL H
Виробник: Central Semiconductor Corp
Description: TRANS PNP 80V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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2N5190 2N5190-5192.pdf
2N5190
Виробник: Central Semiconductor Corp
Description: TRANS NPN 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
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2N5192R 2N5190-5192.pdf
2N5192R
Виробник: Central Semiconductor Corp
Description: TRANS NPN 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
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1N4001G BK 1N4001G%20-%201N4007G.pdf
1N4001G BK
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURPOSE DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
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1N4003G BK 1N4001G%20-%201N4007G.pdf
1N4003G BK
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURPOSE DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Supplier Device Package: DO-41
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1N4004G BK 1N4001G%20-%201N4007G.pdf
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 400V 1A DO41
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TIP47 SL TIP47-TIP50.pdf
TIP47 SL
Виробник: Central Semiconductor Corp
Description: TRANS NPN 250V 1A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 40 W
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TIP112 TIN/LEAD TIP110-TIP112.PDF
TIP112 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 100V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 100 V
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TIP117 TIN/LEAD TIP110-TIP112.PDF
TIP117 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TRANS PNP DARL 100V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Voltage - Collector Emitter Breakdown (Max): 100 V
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TIP131 LSSGP094.PDF
TIP131
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 80V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 70 W
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TIP135 LSSGP094.PDF
TIP135
Виробник: Central Semiconductor Corp
Description: TRANS PNP DARL 60V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 70 W
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UF4001 BK UF4001-UF4007.PDF
UF4001 BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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UF4002 BK UF4001-UF4007.PDF
UF4002 BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 100V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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UF4003 BK UF4001-UF4007.PDF
UF4003 BK
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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UF4004 BK UF4001-UF4007.PDF
UF4004 BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 400V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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UF4005 BK UF4001-UF4007.PDF
UF4005 BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 600V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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UF4006 BK UF4001-UF4007.PDF
UF4006 BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 800V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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UF4007 BK UF4001-UF4007.PDF
UF4007 BK
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
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2N2907A W/GOLD 2N2906.PDF
2N2907A W/GOLD
Виробник: Central Semiconductor Corp
Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-18
Part Status: Obsolete
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2N4033 W/GOLD 2N4033.PDF
2N4033 W/GOLD
Виробник: Central Semiconductor Corp
Description: TRANS PNP 80V 1A TO-39
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-39
Part Status: Obsolete
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2N4036 W/GOLD 2N4036.PDF
2N4036 W/GOLD
Виробник: Central Semiconductor Corp
Description: TRANS PNP 65V 1A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-39
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TIP125 SL TIP120-TIP122.PDF
TIP125 SL
Виробник: Central Semiconductor Corp
Description: TRANS PNP DARL 60V TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 60 V
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TIP112 PBFREE TIP110-TIP112.PDF
TIP112 PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 100V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 100 V
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TIP117 PBFREE TIP110-TIP112.PDF
TIP117 PBFREE
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 100V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Supplier Device Package: TO-220-3
Part Status: Last Time Buy
Voltage - Collector Emitter Breakdown (Max): 100 V
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1N4729A BK 1N4728A-4764A.PDF
1N4729A BK
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 3.6V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N4730A BK 1N4728A-4764A.PDF
1N4730A BK
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 3.9V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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