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74HC138S16-13 DIODES INCORPORATED 74HC138.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
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74HC138T16-13 DIODES INCORPORATED 74HC138.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
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BZT52C15-7-F BZT52C15-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 896 шт:
термін постачання 14-30 дні (днів)
63+7.18 грн
81+5.17 грн
97+4.33 грн
175+2.39 грн
206+2.02 грн
500+1.67 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
AS7805AT-E1 AS7805AT-E1 DIODES INCORPORATED AS78XXA.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7.5...20V
Manufacturer series: AS78XXA
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
17+27.82 грн
23+18.17 грн
25+16.83 грн
Мінімальне замовлення: 17
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BZT52C5V1-7-F BZT52C5V1-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 8889 шт:
термін постачання 14-30 дні (днів)
84+5.38 грн
100+4.17 грн
120+3.50 грн
206+2.02 грн
232+1.80 грн
500+1.58 грн
1000+1.51 грн
3000+1.44 грн
Мінімальне замовлення: 84
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BZT52C5V1S-7-F BZT52C5V1S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
4+112.17 грн
Мінімальне замовлення: 4
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BZT52C5V1SQ-7-F BZT52C5V1SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
20+20.83 грн
Мінімальне замовлення: 20
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DMT3020LFDBQ-7 DIODES INCORPORATED DMT3020LFDBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT6002LPS-13 DIODES INCORPORATED DMT6002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004LPS-13 DIODES INCORPORATED DMT6004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SCT DMT6004SCT DIODES INCORPORATED DMT6004SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SPS-13 DIODES INCORPORATED DMT6004SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-13 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-7 DIODES INCORPORATED DMT6005LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LPS-13 DIODES INCORPORATED DMT6005LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LK3-13 DIODES INCORPORATED DMT6006LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LSS-13 DMT6006LSS-13 DIODES INCORPORATED DMT6006LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006SPS-13 DIODES INCORPORATED DMT6006SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-13 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-7 DMT6007LFG-7 DIODES INCORPORATED DMT6007LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Mounting: SMD
Case: PowerDI®3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 70A
Kind of package: 7 inch reel; tape
Polarisation: unipolar
на замовлення 739 шт:
термін постачання 14-30 дні (днів)
6+85.25 грн
7+60.50 грн
10+55.25 грн
50+45.75 грн
100+42.58 грн
250+41.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DMT6007LFGQ-13 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6007LFGQ-7 DIODES INCORPORATED DMT6007LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6008LFG-13 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6008LFG-7 DIODES INCORPORATED DMT6008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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SMBJ30A-13-F SMBJ30A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2105 шт:
термін постачання 14-30 дні (днів)
23+19.74 грн
28+15.33 грн
32+13.25 грн
40+10.67 грн
100+7.58 грн
125+7.17 грн
250+6.17 грн
500+5.42 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
AP2112K-1.2TRG1 AP2112K-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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AP2112K-2.5TRG1 AP2112K-2.5TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2915 шт:
термін постачання 14-30 дні (днів)
32+14.36 грн
39+10.83 грн
44+9.58 грн
52+8.17 грн
100+6.83 грн
250+6.17 грн
500+5.92 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
DMC3021LSD-13 DMC3021LSD-13 DIODES INCORPORATED DMC3021LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Case: SO8
On-state resistance: 0.021/0.039Ω
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
9+53.84 грн
12+36.08 грн
Мінімальне замовлення: 9
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BSS127S-7 BSS127S-7 DIODES INCORPORATED BSS127.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 861 шт:
термін постачання 14-30 дні (днів)
20+22.43 грн
29+14.75 грн
50+10.17 грн
100+8.67 грн
250+7.00 грн
500+6.00 грн
Мінімальне замовлення: 20
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SMBJ58A-13-F SMBJ58A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1991 шт:
термін постачання 14-30 дні (днів)
42+10.77 грн
49+8.67 грн
54+7.75 грн
65+6.50 грн
100+6.33 грн
Мінімальне замовлення: 42
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74HCT125S14-13 74HCT125S14-13 DIODES INCORPORATED 74HCT125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Number of channels: 4
на замовлення 2194 шт:
термін постачання 14-30 дні (днів)
26+17.59 грн
38+11.00 грн
100+9.83 грн
500+8.83 грн
Мінімальне замовлення: 26
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TL431ASA-7 TL431ASA-7 DIODES INCORPORATED TL431_432.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
42+10.77 грн
50+8.50 грн
55+7.67 грн
65+6.47 грн
100+5.21 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
AP63300WU-7 AP63300WU-7 DIODES INCORPORATED AP63300-AP63301.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
на замовлення 6524 шт:
термін постачання 14-30 дні (днів)
9+53.84 грн
12+35.75 грн
25+32.33 грн
50+30.25 грн
100+29.41 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BAS40-06-7-F BAS40-06-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
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BSS123-7-F BSS123-7-F DIODES INCORPORATED BSS123-7-F.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
BSS123Q-13 BSS123Q-13 DIODES INCORPORATED BSS123Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BSS123Q-7 BSS123Q-7 DIODES INCORPORATED BSS123Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2866 шт:
термін постачання 14-30 дні (днів)
34+13.46 грн
52+8.17 грн
100+4.75 грн
500+3.25 грн
1000+3.12 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BSS123TA BSS123TA DIODES INCORPORATED BSS123.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
15+30.51 грн
21+20.67 грн
50+13.93 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BSS123W-7-F BSS123W-7-F DIODES INCORPORATED BSS123W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
9+46.66 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS123WQ-7-F BSS123WQ-7-F DIODES INCORPORATED BSS123WQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику  од. на суму  грн.
DMG1024UV-7 DMG1024UV-7 DIODES INCORPORATED DMG1024UV-DTE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.89A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 8342 шт:
термін постачання 14-30 дні (днів)
14+34.10 грн
21+20.00 грн
100+12.25 грн
500+8.17 грн
1000+7.17 грн
3000+7.08 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BAV70T-7-F BAV70T-7-F DIODES INCORPORATED BAS16T_BAW56T_BAV70T_BAV99T.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 1818 шт:
термін постачання 14-30 дні (днів)
56+8.08 грн
60+7.00 грн
65+6.50 грн
100+4.95 грн
500+3.85 грн
1000+3.37 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
AL5809-100P1-7 AL5809-100P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 581 шт:
термін постачання 14-30 дні (днів)
16+29.61 грн
22+19.17 грн
25+17.67 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AL5809-150P1-7 AL5809-150P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 1334 шт:
термін постачання 14-30 дні (днів)
17+27.82 грн
20+21.83 грн
22+19.83 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AL5809-15P1-7 AL5809-15P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 655 шт:
термін постачання 14-30 дні (днів)
18+26.02 грн
25+17.08 грн
26+16.50 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AL5809-20S1-7 AL5809-20S1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 20mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 20mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 1064 шт:
термін постачання 14-30 дні (днів)
18+26.02 грн
25+17.08 грн
27+15.67 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AL5809-30P1-7 AL5809-30P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 634 шт:
термін постачання 14-30 дні (днів)
18+26.02 грн
25+17.17 грн
26+16.25 грн
27+15.50 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AL5809-40P1-7 AL5809-40P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 764 шт:
термін постачання 14-30 дні (днів)
17+27.82 грн
23+18.42 грн
25+16.67 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AL5809-50P1-7 AL5809-50P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 489 шт:
термін постачання 14-30 дні (днів)
20+22.43 грн
25+17.17 грн
28+15.08 грн
33+12.92 грн
100+12.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AL5809-60P1-7 AL5809-60P1-7 DIODES INCORPORATED AL5809-DTE.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 1887 шт:
термін постачання 14-30 дні (днів)
17+26.92 грн
19+22.25 грн
23+18.75 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AZ1117H-5.0TRE1 AZ1117H-5.0TRE1 DIODES INCORPORATED AZ1117_Rev5.3_Jan2019_DS.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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DMT3003LFG-13 DIODES INCORPORATED DMT3003LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3003LFG-7 DIODES INCORPORATED DMT3003LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3003LFGQ-7 DIODES INCORPORATED DMT3003LFGQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3004LPS-13 DIODES INCORPORATED DMT3004LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 43.7nC
On-state resistance: 6mΩ
Power dissipation: 2.7W
Drain current: 17A
Drain-source voltage: 30V
Pulsed drain current: 180A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFDF-13 DIODES INCORPORATED DMT3006LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFDF-7 DIODES INCORPORATED DMT3006LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFDFQ-7 DIODES INCORPORATED DMT3006LFDFQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFG-13 DIODES INCORPORATED DMT3006LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFG-7 DIODES INCORPORATED DMT3006LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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74HC138S16-13 74HC138.pdf
Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
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74HC138T16-13 74HC138.pdf
Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Number of channels: 8
Number of inputs: 6
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...150°C
Supply voltage: 2...6V DC
Kind of input: with Schmitt trigger
Technology: CMOS
Kind of output: push-pull
Kind of package: reel; tape
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BZT52C15-7-F BZT52Cxx_ser.pdf
BZT52C15-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 896 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.18 грн
81+5.17 грн
97+4.33 грн
175+2.39 грн
206+2.02 грн
500+1.67 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
AS7805AT-E1 AS78XXA.pdf
AS7805AT-E1
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7.5...20V
Manufacturer series: AS78XXA
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+27.82 грн
23+18.17 грн
25+16.83 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BZT52C5V1-7-F BZT52Cxx_ser.pdf
BZT52C5V1-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 8889 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
84+5.38 грн
100+4.17 грн
120+3.50 грн
206+2.02 грн
232+1.80 грн
500+1.58 грн
1000+1.51 грн
3000+1.44 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
BZT52C5V1S-7-F BZT52CxxS_ser.pdf
BZT52C5V1S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+112.17 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BZT52C5V1SQ-7-F BZT52CxxS_ser.pdf
BZT52C5V1SQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+20.83 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
DMT3020LFDBQ-7 DMT3020LFDBQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT6002LPS-13 DMT6002LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004LPS-13 DMT6004LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SCT DMT6004SCT.pdf
DMT6004SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SPS-13 DMT6004SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-13 DMT6005LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-7 DMT6005LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LPS-13 DMT6005LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LK3-13 DMT6006LK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LSS-13 DMT6006LSS.pdf
DMT6006LSS-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006SPS-13 DMT6006SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-13 DMT6007LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Mounting: SMD
Case: PowerDI®3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 70A
Kind of package: 7 inch reel; tape
Polarisation: unipolar
на замовлення 739 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+85.25 грн
7+60.50 грн
10+55.25 грн
50+45.75 грн
100+42.58 грн
250+41.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DMT6007LFGQ-13 DMT6007LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6007LFGQ-7 DMT6007LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6008LFG-13 DMT6008LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6008LFG-7 DMT6008LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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SMBJ30A-13-F SMBJ_ser.pdf
SMBJ30A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2105 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.74 грн
28+15.33 грн
32+13.25 грн
40+10.67 грн
100+7.58 грн
125+7.17 грн
250+6.17 грн
500+5.42 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
AP2112K-1.2TRG1 AP2112.pdf
AP2112K-1.2TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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AP2112K-2.5TRG1 AP2112.pdf
AP2112K-2.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2915 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.36 грн
39+10.83 грн
44+9.58 грн
52+8.17 грн
100+6.83 грн
250+6.17 грн
500+5.92 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
DMC3021LSD-13 DMC3021LSD-13.pdf
DMC3021LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Case: SO8
On-state resistance: 0.021/0.039Ω
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+53.84 грн
12+36.08 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS127S-7 BSS127.pdf
BSS127S-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Drain current: 70mA
Power dissipation: 0.61W
On-state resistance: 160Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 861 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.43 грн
29+14.75 грн
50+10.17 грн
100+8.67 грн
250+7.00 грн
500+6.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SMBJ58A-13-F SMBJ_ser.pdf
SMBJ58A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1991 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.77 грн
49+8.67 грн
54+7.75 грн
65+6.50 грн
100+6.33 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
74HCT125S14-13 74HCT125.pdf
74HCT125S14-13
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; SO14; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Technology: CMOS; TTL
Manufacturer series: HCT
Number of channels: 4
на замовлення 2194 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
26+17.59 грн
38+11.00 грн
100+9.83 грн
500+8.83 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
TL431ASA-7 TL431_432.pdf
TL431ASA-7
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.77 грн
50+8.50 грн
55+7.67 грн
65+6.47 грн
100+5.21 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
AP63300WU-7 AP63300-AP63301.pdf
AP63300WU-7
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷31VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...31V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 96%
на замовлення 6524 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+53.84 грн
12+35.75 грн
25+32.33 грн
50+30.25 грн
100+29.41 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BAS40-06-7-F BAS40_-04_-05_-06.pdf
BAS40-06-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Reverse recovery time: 5ns
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BSS123-7-F BSS123-7-F.pdf
BSS123-7-F
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BSS123Q-13 BSS123Q.pdf
BSS123Q-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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BSS123Q-7 BSS123Q.pdf
BSS123Q-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2866 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.46 грн
52+8.17 грн
100+4.75 грн
500+3.25 грн
1000+3.12 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BSS123TA BSS123.pdf
BSS123TA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+30.51 грн
21+20.67 грн
50+13.93 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BSS123W-7-F BSS123W.pdf
BSS123W-7-F
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+46.66 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS123WQ-7-F BSS123WQ.pdf
BSS123WQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG1024UV-7 DMG1024UV-DTE.pdf
DMG1024UV-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.89A; 0.53W; SOT563; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.89A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 8342 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.10 грн
21+20.00 грн
100+12.25 грн
500+8.17 грн
1000+7.17 грн
3000+7.08 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BAV70T-7-F BAS16T_BAW56T_BAV70T_BAV99T.pdf
BAV70T-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.155A; 4ns; SOT523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.155A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 1818 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.08 грн
60+7.00 грн
65+6.50 грн
100+4.95 грн
500+3.85 грн
1000+3.37 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
AL5809-100P1-7 AL5809-DTE.pdf
AL5809-100P1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.1A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 581 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.61 грн
22+19.17 грн
25+17.67 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AL5809-150P1-7 AL5809-DTE.pdf
AL5809-150P1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 150mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 0.15A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 1334 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+27.82 грн
20+21.83 грн
22+19.83 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AL5809-15P1-7 AL5809-DTE.pdf
AL5809-15P1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 15mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 15mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 655 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+26.02 грн
25+17.08 грн
26+16.50 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AL5809-20S1-7 AL5809-DTE.pdf
AL5809-20S1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 20mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Output current: 20mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 1064 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+26.02 грн
25+17.08 грн
27+15.67 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AL5809-30P1-7 AL5809-DTE.pdf
AL5809-30P1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 30mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 30mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 634 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+26.02 грн
25+17.17 грн
26+16.25 грн
27+15.50 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AL5809-40P1-7 AL5809-DTE.pdf
AL5809-40P1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 40mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 40mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 764 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+27.82 грн
23+18.42 грн
25+16.67 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AL5809-50P1-7 AL5809-DTE.pdf
AL5809-50P1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 50mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 50mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 489 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.43 грн
25+17.17 грн
28+15.08 грн
33+12.92 грн
100+12.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AL5809-60P1-7 AL5809-DTE.pdf
AL5809-60P1-7
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; current regulator,LED driver; PowerDI®123; 60mA; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: PowerDI®123
Output current: 60mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 2.5...60V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 1887 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
17+26.92 грн
19+22.25 грн
23+18.75 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AZ1117H-5.0TRE1 AZ1117_Rev5.3_Jan2019_DS.pdf
AZ1117H-5.0TRE1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.25V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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DMT3003LFG-13 DMT3003LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3003LFG-7 DMT3003LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3003LFGQ-7 DMT3003LFGQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 100A; 2.4W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 44nC
On-state resistance: 5.5mΩ
Power dissipation: 2.4W
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3004LPS-13 DMT3004LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 180A; 2.7W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -16...20V
Gate charge: 43.7nC
On-state resistance: 6mΩ
Power dissipation: 2.7W
Drain current: 17A
Drain-source voltage: 30V
Pulsed drain current: 180A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFDF-13 DMT3006LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFDF-7 DMT3006LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFDFQ-7 DMT3006LFDFQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 80A; 2.1W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 15mΩ
Power dissipation: 2.1W
Drain current: 12.5A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: U-DFN2020-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT3006LFG-13 DMT3006LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 13 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
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DMT3006LFG-7 DMT3006LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.8A; Idm: 80A; 27.8W
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 16.7nC
On-state resistance: 10mΩ
Power dissipation: 27.8W
Drain current: 12.8A
Drain-source voltage: 30V
Pulsed drain current: 80A
Kind of package: 7 inch reel; tape
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
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