Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72978) > Сторінка 252 з 1217
| Фото | Назва | Виробник | Інформація |
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BZT52C51S-13 | Diodes Incorporated |
Description: DIODE ZENER 51V 200MW SOD123 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZ20BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 20V 500MW SOD323FPackaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 70 nA @ 17.7 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 20 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2.5% |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DDZ5V6BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 5.6V 500MW SOD323FVoltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2.5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 80 Ohms |
на замовлення 345000 шт: термін постачання 21-31 дні (днів) |
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DDZ6V2BSF-7 | Diodes Incorporated |
Description: DIODE ZENER 6.12V 500MW SOD323FPackaging: Tape & Reel (TR) Tolerance: ±3% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.12 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 3 V |
на замовлення 1947000 шт: термін постачання 21-31 дні (днів) |
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DDZX10C-13 | Diodes Incorporated |
Description: DIODE ZENER 10V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX11C-13 | Diodes Incorporated |
Description: DIODE ZENER 11V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX12C-13 | Diodes Incorporated |
Description: DIODE ZENER 12V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX13B-13 | Diodes Incorporated |
Description: DIODE ZENER 13V 300MW SOT23 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DDZX14-13 | Diodes Incorporated |
Description: DIODE ZENER 14V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX15-13 | Diodes Incorporated |
Description: DIODE ZENER 15V 300MW SOT23 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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DDZX16-13 | Diodes Incorporated |
Description: DIODE ZENER 16V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX18C-13 | Diodes Incorporated |
Description: DIODE ZENER 18V 300MW SOT23Current - Reverse Leakage @ Vr: 50 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% Packaging: Tape & Reel (TR) |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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DDZX20C-13 | Diodes Incorporated |
Description: DIODE ZENER 20V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX22D-13 | Diodes Incorporated |
Description: DIODE ZENER 22V 300MW SOT23 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DDZX27D-13 | Diodes Incorporated |
Description: DIODE ZENER 27V 300MW SOT23 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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DDZX30D-13 | Diodes Incorporated |
Description: DIODE ZENER 30V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX33-13 | Diodes Incorporated |
Description: DIODE ZENER 33V 300MW SOT23Voltage - Zener (Nom) (Vz): 33 V Power - Max: 300 mW Impedance (Max) (Zzt): 75 Ohms Current - Reverse Leakage @ Vr: 50 nA @ 27 V Voltage Coupled to Current - Reverse Leakage @ Vr: 27 Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Supplier Device Package: SOT-23-3 Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX36-13 | Diodes Incorporated |
Description: DIODE ZENER 36.9V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX39F-13 | Diodes Incorporated |
Description: DIODE ZENER 39V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX43-13 | Diodes Incorporated |
Description: DIODE ZENER 43V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX5V1B-13 | Diodes Incorporated |
Description: DIODE ZENER 5.1V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX5V6B-13 | Diodes Incorporated |
Description: DIODE ZENER 5.6V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX6V2B-13 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 300MW SOT23Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 500 nA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 6.2 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX6V8C-13 | Diodes Incorporated |
Description: DIODE ZENER 6.8V 300MW SOT23Current - Reverse Leakage @ Vr: 100 nA @ 5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2.56% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX7V5C-13 | Diodes Incorporated |
Description: DIODE ZENER 7.5V 300MW SOT23Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±3% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 6 Ohms |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DDZX8V2C-13 | Diodes Incorporated |
Description: DIODE ZENER 8.2V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZX9V1C-13 | Diodes Incorporated |
Description: DIODE ZENER 9.1V 300MW SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DESD6V8DLP-7B | Diodes Incorporated |
Description: TVS DIODE 5.25VWM X1DFN10063Power Line Protection: No Power - Peak Pulse: 70W Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 2 Supplier Device Package: X1-DFN1006-3 Voltage - Reverse Standoff (Typ): 5.25V Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF1501S | Diodes Incorporated |
Description: BRIDGE RECT 1P 100V 1.5A DF-S |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DF1508S | Diodes Incorporated |
Description: BRIDGE RECT 1P 800V 1.5A DF-SPackaging: Tube Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DF-S Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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DFLF1800-7 | Diodes Incorporated |
Description: DIODE GP 800V 1A POWERDI123 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: PowerDI™ 123 Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: POWERDI®123 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DFLS260-7 | Diodes Incorporated |
Description: DIODE SCHOTTK 60V 2A POWERDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMC3032LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8.1A/7A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMG4407SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 9.9A 8SOInput Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.45W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMG4468LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.62A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN3030-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMG4812SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 8A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1.54W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMG7702SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A POWERDI3333 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMG9933USD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.6A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V Current - Continuous Drain (Id) @ 25°C: 4.6A Drain to Source Voltage (Vdss): 20V Power - Max: 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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DMN2004TK-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 540MA SOT523Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V |
на замовлення 372000 шт: термін постачання 21-31 дні (днів) |
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DMN2300UFB-7B | Diodes Incorporated |
Description: MOSFET N-CH 20V 1.32A 3DFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 468mW (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta) FET Type: N-Channel |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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DMN2600UFB-7 | Diodes Incorporated |
Description: MOSFET N-CH 25V 1.3A 3DFNOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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DMN3024SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN3025LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMN3051LDM-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT26Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DMN66D0LW-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 115MA SOT323 |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMP1045U-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 4A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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DMP1045UFY4-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2015H4-3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMP2008UFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 14A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DMP210DUDJ-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.2A SOT-963 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP2160UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFNSupplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 417000 шт: термін постачання 21-31 дні (днів) |
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DMP21D0UFB-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 770MA 3DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP3008SFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP3120L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 2.8A SOT-23Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP4015SSS-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 9.1A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 1.45W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP4025SFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 40V 4.65A PWRDI3333Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1.8V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Power Dissipation (Max): 810mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 171000 шт: термін постачання 21-31 дні (днів) |
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DMP58D0LFB-7 | Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA 3DFN Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Supplier Device Package: X1-DFN1006-3 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMS3012SFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A POWERDI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DN0150ALP4-7 | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A DFN1006H4-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DN0150BLP4-7 | Diodes Incorporated |
Description: TRANS NPN 50V 0.1A X1-DFN1006-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DP0150ALP4-7 | Diodes Incorporated |
Description: TRANS PNP 50V 0.1A X1DFN10063 |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| BZT52C51S-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 51V 200MW SOD123
Description: DIODE ZENER 51V 200MW SOD123
товару немає в наявності
В кошику
од. на суму грн.
| DDZ20BSF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 20V 500MW SOD323F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 70 nA @ 17.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
Description: DIODE ZENER 20V 500MW SOD323F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 70 nA @ 17.7 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DDZ5V6BSF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.6V 500MW SOD323F
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 80 Ohms
Description: DIODE ZENER 5.6V 500MW SOD323F
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2.5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 80 Ohms
на замовлення 345000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.63 грн |
| 6000+ | 1.50 грн |
| 9000+ | 1.40 грн |
| 15000+ | 1.22 грн |
| DDZ6V2BSF-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 6.12V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 3 V
Description: DIODE ZENER 6.12V 500MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 3 V
на замовлення 1947000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.48 грн |
| 6000+ | 1.74 грн |
| 9000+ | 1.70 грн |
| DDZX10C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 10V 300MW SOT23
Description: DIODE ZENER 10V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX11C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 11V 300MW SOT23
Description: DIODE ZENER 11V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX12C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 12V 300MW SOT23
Description: DIODE ZENER 12V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX13B-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 13V 300MW SOT23
Description: DIODE ZENER 13V 300MW SOT23
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DDZX14-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 14V 300MW SOT23
Description: DIODE ZENER 14V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX15-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 300MW SOT23
Description: DIODE ZENER 15V 300MW SOT23
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.39 грн |
| DDZX16-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 16V 300MW SOT23
Description: DIODE ZENER 16V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX18C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 18V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 18V 300MW SOT23
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.37 грн |
| 30000+ | 2.24 грн |
| 50000+ | 2.01 грн |
| DDZX20C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 20V 300MW SOT23
Description: DIODE ZENER 20V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX22D-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 22V 300MW SOT23
Description: DIODE ZENER 22V 300MW SOT23
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DDZX27D-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Description: DIODE ZENER 27V 300MW SOT23
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.71 грн |
| DDZX30D-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 30V 300MW SOT23
Description: DIODE ZENER 30V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX33-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 33V 300MW SOT23
Voltage - Zener (Nom) (Vz): 33 V
Power - Max: 300 mW
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 27
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Supplier Device Package: SOT-23-3
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 33V 300MW SOT23
Voltage - Zener (Nom) (Vz): 33 V
Power - Max: 300 mW
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 27
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Supplier Device Package: SOT-23-3
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DDZX36-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 36.9V 300MW SOT23
Description: DIODE ZENER 36.9V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX39F-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 39V 300MW SOT23
Description: DIODE ZENER 39V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX43-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 43V 300MW SOT23
Description: DIODE ZENER 43V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX5V1B-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Description: DIODE ZENER 5.1V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX5V6B-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.6V 300MW SOT23
Description: DIODE ZENER 5.6V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX6V2B-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 6.2V 300MW SOT23
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Description: DIODE ZENER 6.2V 300MW SOT23
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
товару немає в наявності
В кошику
од. на суму грн.
| DDZX6V8C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 6.8V 300MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 6.8V 300MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DDZX7V5C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 6 Ohms
Description: DIODE ZENER 7.5V 300MW SOT23
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 6 Ohms
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.61 грн |
| 30000+ | 2.47 грн |
| 50000+ | 2.22 грн |
| 100000+ | 1.85 грн |
| DDZX8V2C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23
Description: DIODE ZENER 8.2V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DDZX9V1C-13 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 9.1V 300MW SOT23
Description: DIODE ZENER 9.1V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
| DESD6V8DLP-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.25VWM X1DFN10063
Power Line Protection: No
Power - Peak Pulse: 70W
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 2
Supplier Device Package: X1-DFN1006-3
Voltage - Reverse Standoff (Typ): 5.25V
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5.25VWM X1DFN10063
Power Line Protection: No
Power - Peak Pulse: 70W
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 2
Supplier Device Package: X1-DFN1006-3
Voltage - Reverse Standoff (Typ): 5.25V
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DF1501S |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1.5A DF-S
Description: BRIDGE RECT 1P 100V 1.5A DF-S
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 61.08 грн |
| DF1508S |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1P 800V 1.5A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1.5A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 127.38 грн |
| DFLF1800-7 |
Виробник: Diodes Incorporated
Description: DIODE GP 800V 1A POWERDI123
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
Description: DIODE GP 800V 1A POWERDI123
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DFLS260-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 60V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTK 60V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| DMC3032LSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 11.69 грн |
| DMG4407SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DMG4468LFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7.62A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN3030-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 7.62A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN3030-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DMG4812SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DMG7702SFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI3333
Description: MOSFET N-CH 30V 12A POWERDI3333
товару немає в наявності
В кошику
од. на суму грн.
| DMG9933USD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 10.77 грн |
| 5000+ | 9.46 грн |
| 7500+ | 9.00 грн |
| 12500+ | 7.96 грн |
| 17500+ | 7.67 грн |
| 25000+ | 7.39 грн |
| DMN2004TK-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 540MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
Description: MOSFET N-CH 20V 540MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
на замовлення 372000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.97 грн |
| 6000+ | 9.66 грн |
| 9000+ | 9.19 грн |
| 15000+ | 8.14 грн |
| 21000+ | 7.85 грн |
| 30000+ | 7.56 грн |
| DMN2300UFB-7B |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 1.32A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 468mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 20V 1.32A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 468mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.46 грн |
| 30000+ | 6.14 грн |
| 50000+ | 5.22 грн |
| DMN2600UFB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 25V 1.3A 3DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.88 грн |
| 6000+ | 3.36 грн |
| 9000+ | 3.16 грн |
| 15000+ | 2.77 грн |
| 21000+ | 2.64 грн |
| 30000+ | 2.53 грн |
| 75000+ | 2.23 грн |
| DMN3024SFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
товару немає в наявності
В кошику
од. на суму грн.
| DMN3025LFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMN3051LDM-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 4A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.59 грн |
| 6000+ | 10.44 грн |
| 15000+ | 9.72 грн |
| 30000+ | 8.65 грн |
| DMN66D0LW-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT323
Description: MOSFET N-CH 60V 115MA SOT323
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DMP1045U-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.08 грн |
| 6000+ | 6.18 грн |
| 9000+ | 5.86 грн |
| 15000+ | 5.16 грн |
| 21000+ | 4.95 грн |
| DMP1045UFY4-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2015H4-3
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2015H4-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.86 грн |
| DMP2008UFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.67 грн |
| 6000+ | 13.87 грн |
| 9000+ | 13.26 грн |
| 15000+ | 11.79 грн |
| 21000+ | 11.40 грн |
| 30000+ | 11.03 грн |
| DMP210DUDJ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.2A SOT-963
Description: MOSFET 2P-CH 20V 0.2A SOT-963
товару немає в наявності
В кошику
од. на суму грн.
| DMP2160UFDB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 417000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.49 грн |
| DMP21D0UFB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 770MA 3DFN
Description: MOSFET P-CH 20V 770MA 3DFN
товару немає в наявності
В кошику
од. на суму грн.
| DMP3008SFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
товару немає в наявності
В кошику
од. на суму грн.
| DMP3120L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 2.8A SOT-23
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Description: MOSFET P-CH 30V 2.8A SOT-23
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP4015SSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 9.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Description: MOSFET P-CH 40V 9.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP4025SFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 4.65A PWRDI3333
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 4.65A PWRDI3333
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 171000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.35 грн |
| 6000+ | 12.70 грн |
| 9000+ | 12.14 грн |
| 15000+ | 10.79 грн |
| 21000+ | 10.64 грн |
| DMP58D0LFB-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 50V 180MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.23 грн |
| DMS3012SFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI
Description: MOSFET N-CH 30V 12A POWERDI
товару немає в наявності
В кошику
од. на суму грн.
| DN0150ALP4-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Description: TRANS NPN 50V 0.1A DFN1006H4-3
товару немає в наявності
В кошику
од. на суму грн.
| DN0150BLP4-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 50V 0.1A X1-DFN1006-3
Description: TRANS NPN 50V 0.1A X1-DFN1006-3
товару немає в наявності
В кошику
од. на суму грн.
| DP0150ALP4-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 50V 0.1A X1DFN10063
Description: TRANS PNP 50V 0.1A X1DFN10063
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.























