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SMCJ48A-13-F SMCJ48A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1185 шт:
термін постачання 21-30 дні (днів)
13+34.43 грн
14+28.77 грн
15+27.10 грн
100+22.06 грн
500+20.30 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMCJ15CA-13-F SMCJ15CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ150A-13-F SMCJ150A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ150CA-13-F SMCJ150CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ15A-13-F SMCJ15A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BZT585B5V6T-7 BZT585B5V6T-7 DIODES INCORPORATED BZT585BxVxT.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
10+39.96 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BCX55TA BCX55TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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BCX5510TA BCX5510TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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DMP6110SVT-7 DMP6110SVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1DF2052C878BF&compId=DMP6110SVT.pdf?ci_sign=bf2b487b25cf772f3c29be1ccad69b6ebf614269 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: -6.5A
On-state resistance: 0.13Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
на замовлення 2886 шт:
термін постачання 21-30 дні (днів)
10+47.34 грн
12+34.37 грн
50+26.62 грн
100+23.74 грн
250+20.38 грн
500+18.38 грн
1000+16.54 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN6040SVT-7 DMN6040SVT-7 DIODES INCORPORATED DMN6040SVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: 30A
Drain current: 5A
Gate charge: 22.4nC
On-state resistance: 60mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
11+42.18 грн
13+31.97 грн
30+25.74 грн
100+19.50 грн
250+16.07 грн
500+14.07 грн
1000+12.55 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMP3050LVT-7 DMP3050LVT-7 DIODES INCORPORATED DMP3050LVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -25A
Drain current: -3.5A
On-state resistance: 50mΩ
Power dissipation: 1.6W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
на замовлення 2411 шт:
термін постачання 21-30 дні (днів)
12+36.15 грн
14+29.09 грн
16+26.06 грн
100+15.83 грн
500+11.35 грн
1000+10.07 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
AP62301WU-7 AP62301WU-7 DIODES INCORPORATED AP62300_AP62301_AP62300T.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Efficiency: 83%
Frequency: 750kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2858 шт:
термін постачання 21-30 дні (днів)
16+27.54 грн
20+20.62 грн
22+18.30 грн
26+15.67 грн
50+14.23 грн
100+13.91 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AP62201WU-7 AP62201WU-7 DIODES INCORPORATED AP62200_AP62201_AP62200T.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Efficiency: 84%
Frequency: 750kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2845 шт:
термін постачання 21-30 дні (днів)
21+20.66 грн
26+15.67 грн
30+13.75 грн
35+11.67 грн
100+11.35 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DT1446-04TS-7 DT1446-04TS-7 DIODES INCORPORATED DT1446-04TS.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 4.7A; unidirectional; TSOT26; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: HDMI
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DMN4060SVT-7 DMN4060SVT-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9A75BEE4C78BF&compId=DMN4060SVT.pdf?ci_sign=fdb3230d197884431f6bb0be3cb699dff6491791 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4.1A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: 4.1A
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
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DMN10H170SVTQ-7 DMN10H170SVTQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8A1966A3A38BF&compId=DMN10H170SVT.pdf?ci_sign=a64b907b6f7bde2e9bcbba1dd386ab3f50d1bb03 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: 2.3A
On-state resistance: 0.2Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
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DMN61D8LVT-13 DMN61D8LVT-13 DIODES INCORPORATED DMN61D8L-LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMN61D8LVTQ-13 DMN61D8LVTQ-13 DIODES INCORPORATED DMN61D8LVTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Application: automotive industry
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMN61D8LVTQ-7 DMN61D8LVTQ-7 DIODES INCORPORATED DMN61D8LVTQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMP2036UVT-13 DMP2036UVT-13 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Pulsed drain current: -40A
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
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DMP2036UVT-7 DMP2036UVT-7 DIODES INCORPORATED DMP2036UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -40A
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
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DMP3050LVTQ-7 DIODES INCORPORATED DMP3050LVTQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -25A
Drain current: -4.5A
Gate charge: 10.5nC
On-state resistance: 50mΩ
Power dissipation: 1W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
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MMBD7000HC-7-F MMBD7000HC-7-F DIODES INCORPORATED MMBD7000HS_HC.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
на замовлення 3143 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
87+4.64 грн
95+4.24 грн
137+2.93 грн
500+2.21 грн
1000+1.93 грн
3000+1.52 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBD7000-7-F MMBD7000-7-F DIODES INCORPORATED MMBD7000.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
на замовлення 1150 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
87+4.64 грн
99+4.08 грн
168+2.39 грн
500+1.65 грн
1000+1.41 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBD4148W-7-F DIODES INCORPORATED MMBD4148W_BAS16W.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148TW-7-F DIODES INCORPORATED ds30154.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148PLM-7 DIODES INCORPORATED MMBD4148PLM.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Features of semiconductor devices: small signal
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
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SBR8U60P5-13 SBR8U60P5-13 DIODES INCORPORATED SBR8U60P5.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Technology: SBR®
Kind of package: reel; tape
на замовлення 3110 шт:
термін постачання 21-30 дні (днів)
7+69.72 грн
10+42.60 грн
100+33.01 грн
250+29.97 грн
500+27.89 грн
1000+26.06 грн
2000+24.30 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AP2280-1WG-7 AP2280-1WG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP2280-1FMG-7 AP2280-1FMG-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
на замовлення 775 шт:
термін постачання 21-30 дні (днів)
13+35.29 грн
18+23.42 грн
25+20.78 грн
100+17.98 грн
250+16.70 грн
500+16.07 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
AP22804ASN-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22804BSN-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2280-2FMG-7 DIODES INCORPORATED AP2280.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP22804AM8-13 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22804BM8-13 DIODES INCORPORATED AP22804_14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22804BW5-7 AP22804BW5-7 DIODES INCORPORATED AP22804-14.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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DM8W17AQ-13 DIODES INCORPORATED DM8W18AQ-DM8W43AQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Mounting: SMD
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SBR1045CTLQ-13 DIODES INCORPORATED SBR1045CTLQ.pdf Category: SMD Schottky diodes
Description: SBR1045CTLQ-13
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
2500+30.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
GBJ1504-F DIODES INCORPORATED ds21219.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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GBJ1510-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984FE26664303D8BF&compId=GBJ15_ser.pdf?ci_sign=d0ee1f72a3eea29423c53400a5242565e88a5ead Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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SBR2045CT-G DIODES INCORPORATED SBR2045.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 120A
Technology: SBR®
Max. load current: 20A
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DMT10H010SPS-13 DIODES INCORPORATED DMT10H010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.6A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH6010SPS-13 DIODES INCORPORATED DMTH6010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 400A
Drain current: 10.4A
Gate charge: 38.1nC
On-state resistance: 8mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H010SPS-13 DIODES INCORPORATED DMTH10H010SPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.3A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H010SPSQ-13 DIODES INCORPORATED DMTH10H010SPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Application: automotive industry
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.3A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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74LVC2G126HD4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109D54D460D3&compId=74LVC2G126.pdf?ci_sign=4161d9d2ba6e3a33ab5b574c9490c45adcf792b2 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of output: 3-state
Family: LVC
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMNH45M7SCT DMNH45M7SCT DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
3+143.75 грн
50+80.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMNH6008SCT DMNH6008SCT DIODES INCORPORATED DMNH6008SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
3+204.00 грн
10+101.51 грн
50+78.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMBJ78A-13-F SMBJ78A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP130-33YG-13 AP130-33YG-13 DIODES INCORPORATED AP130.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.7...5.5V
на замовлення 1692 шт:
термін постачання 21-30 дні (днів)
11+42.18 грн
15+27.81 грн
25+25.26 грн
100+22.06 грн
250+20.38 грн
500+19.18 грн
1000+18.14 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DPS1135FIA-13 DIODES INCORPORATED DPS1135.pdf Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 5A; Ch: 1; SMD; VQFN17; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Output current: 5A
Number of channels: 1
Mounting: SMD
Case: VQFN17
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4...24V DC
Active logical level: high
Operating temperature: -40...125°C
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SMBJ200A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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B340AX-13 DIODES INCORPORATED B340AX.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
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FES1GE DIODES INCORPORATED FES1GE.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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SMBJ85A-13-F SMBJ85A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)
21+20.66 грн
25+16.15 грн
29+13.83 грн
38+10.55 грн
100+6.79 грн
500+6.07 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
SDT30100CTFP DIODES INCORPORATED SDT30100CT-SDT30100CTFP.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; Ufmax: 750mV; Ir: 100uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Max. load current: 15A
Leakage current: 0.1mA
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DMT4005SCT DMT4005SCT DIODES INCORPORATED DMT4005SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49.1nC
On-state resistance: 3.8mΩ
Power dissipation: 104W
Drain current: 85A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 160A
Kind of package: tube
Case: TO220AB
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BAT400D-7-F BAT400D-7-F DIODES INCORPORATED BAT400D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape; 450mW
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 125pF
Leakage current: 50µA
Power dissipation: 0.45W
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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DMT4002LPS-13 DIODES INCORPORATED DMT4002LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 116.1nC
On-state resistance: 3.1mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT4003SCT DMT4003SCT DIODES INCORPORATED DMT4003SCT.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 75.6nC
On-state resistance: 2.4mΩ
Power dissipation: 156W
Drain current: 164A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 350A
Kind of package: tube
Case: TO220AB
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SMCJ48A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ48A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 53.3÷58.9V; 19.4A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1185 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.43 грн
14+28.77 грн
15+27.10 грн
100+22.06 грн
500+20.30 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMCJ15CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ15CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ150A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ150A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ150CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ150CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷185V; 6.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ15A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ15A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 61.5A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 61.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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BZT585B5V6T-7 BZT585BxVxT.pdf
BZT585B5V6T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 5.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+39.96 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BCX55TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX55TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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BCX5510TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BD11709F2591BF&compId=BCX54x-DTE.pdf?ci_sign=a6de10d206e214dd6aa6c975b3b2ed6b35926cdf
BCX5510TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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DMP6110SVT-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1DF2052C878BF&compId=DMP6110SVT.pdf?ci_sign=bf2b487b25cf772f3c29be1ccad69b6ebf614269
DMP6110SVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: -6.5A
On-state resistance: 0.13Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
на замовлення 2886 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+47.34 грн
12+34.37 грн
50+26.62 грн
100+23.74 грн
250+20.38 грн
500+18.38 грн
1000+16.54 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN6040SVT-7 DMN6040SVT.pdf
DMN6040SVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 30A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: 30A
Drain current: 5A
Gate charge: 22.4nC
On-state resistance: 60mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.18 грн
13+31.97 грн
30+25.74 грн
100+19.50 грн
250+16.07 грн
500+14.07 грн
1000+12.55 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DMP3050LVT-7 DMP3050LVT.pdf
DMP3050LVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -25A; 1.6W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -25A
Drain current: -3.5A
On-state resistance: 50mΩ
Power dissipation: 1.6W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
на замовлення 2411 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.15 грн
14+29.09 грн
16+26.06 грн
100+15.83 грн
500+11.35 грн
1000+10.07 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
AP62301WU-7 AP62300_AP62301_AP62300T.pdf
AP62301WU-7
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 3A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Efficiency: 83%
Frequency: 750kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2858 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.54 грн
20+20.62 грн
22+18.30 грн
26+15.67 грн
50+14.23 грн
100+13.91 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AP62201WU-7 AP62200_AP62201_AP62200T.pdf
AP62201WU-7
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2A; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Operating temperature: -40...85°C
Output current: 2A
Output voltage: 0.8...7V DC
Input voltage: 4.2...18V DC
Efficiency: 84%
Frequency: 750kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
на замовлення 2845 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.66 грн
26+15.67 грн
30+13.75 грн
35+11.67 грн
100+11.35 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
DT1446-04TS-7 DT1446-04TS.pdf
DT1446-04TS-7
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 4.7A; unidirectional; TSOT26; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6...9V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOT26
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Application: HDMI
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DMN4060SVT-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C9A75BEE4C78BF&compId=DMN4060SVT.pdf?ci_sign=fdb3230d197884431f6bb0be3cb699dff6491791
DMN4060SVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4.1A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Drain current: 4.1A
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
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DMN10H170SVTQ-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8A1966A3A38BF&compId=DMN10H170SVT.pdf?ci_sign=a64b907b6f7bde2e9bcbba1dd386ab3f50d1bb03
DMN10H170SVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: 2.3A
On-state resistance: 0.2Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
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DMN61D8LVT-13 DMN61D8L-LVT.pdf
DMN61D8LVT-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMN61D8LVTQ-13 DMN61D8LVTQ.pdf
DMN61D8LVTQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Application: automotive industry
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMN61D8LVTQ-7 DMN61D8LVTQ.pdf
DMN61D8LVTQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Application: automotive industry
Drain current: 0.5A
Gate charge: 740pC
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate-source voltage: ±12V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
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DMP2036UVT-13
DMP2036UVT-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Pulsed drain current: -40A
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
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DMP2036UVT-7 DMP2036UVT.pdf
DMP2036UVT-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -40A
Drain current: -5A
Gate charge: 20.5nC
On-state resistance: 58mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
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DMP3050LVTQ-7 DMP3050LVTQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 7 inch reel; tape
Pulsed drain current: -25A
Drain current: -4.5A
Gate charge: 10.5nC
On-state resistance: 50mΩ
Power dissipation: 1W
Gate-source voltage: ±25V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
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MMBD7000HC-7-F MMBD7000HS_HC.pdf
MMBD7000HC-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
на замовлення 3143 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
87+4.64 грн
95+4.24 грн
137+2.93 грн
500+2.21 грн
1000+1.93 грн
3000+1.52 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBD7000-7-F MMBD7000.pdf
MMBD7000-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
на замовлення 1150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
87+4.64 грн
99+4.08 грн
168+2.39 грн
500+1.65 грн
1000+1.41 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMBD4148W-7-F MMBD4148W_BAS16W.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148TW-7-F ds30154.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MMBD4148PLM-7 MMBD4148PLM.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; U-DFN1616-6; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; fivefold
Features of semiconductor devices: small signal
Case: U-DFN1616-6
Max. forward voltage: 1.25V
Kind of package: reel; tape
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SBR8U60P5-13 SBR8U60P5.pdf
SBR8U60P5-13
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 60V; 8A; PowerDI®5; Ufmax: 0.46V; Ifsm: 280A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.46V
Max. forward impulse current: 280A
Technology: SBR®
Kind of package: reel; tape
на замовлення 3110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+69.72 грн
10+42.60 грн
100+33.01 грн
250+29.97 грн
500+27.89 грн
1000+26.06 грн
2000+24.30 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
AP2280-1WG-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47
AP2280-1WG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP2280-1FMG-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED883973E5BBA95AA18&compId=AP2280.pdf?ci_sign=42c1df83c5ded15344f3cf9bd58ff7c57221ec47
AP2280-1FMG-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
на замовлення 775 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+35.29 грн
18+23.42 грн
25+20.78 грн
100+17.98 грн
250+16.70 грн
500+16.07 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
AP22804ASN-7 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22804BSN-7 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2020-6
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP2280-2FMG-7 AP2280.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: U-DFN2018-6
On-state resistance: 80mΩ
Kind of package: reel; tape
Supply voltage: 1.5...6V DC
Active logical level: high
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AP22804AM8-13 AP22804-14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22804BM8-13 AP22804_14.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: MSOP8
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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AP22804BW5-7 AP22804-14.pdf
AP22804BW5-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.5A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT25
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: low
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DM8W17AQ-13 DM8W18AQ-DM8W43AQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Mounting: SMD
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SBR1045CTLQ-13 SBR1045CTLQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: SBR1045CTLQ-13
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+30.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
GBJ1504-F ds21219.pdf
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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GBJ1510-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984FE26664303D8BF&compId=GBJ15_ser.pdf?ci_sign=d0ee1f72a3eea29423c53400a5242565e88a5ead
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ
Features of semiconductor devices: glass passivated
Kind of package: tube
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SBR2045CT-G SBR2045.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; tube; Ifsm: 120A; TO220AB; SBR®
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 120A
Technology: SBR®
Max. load current: 20A
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DMT10H010SPS-13 DMT10H010SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.6A; Idm: 250A; 1.2W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.6A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH6010SPS-13 DMTH6010SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10.4A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 400A
Drain current: 10.4A
Gate charge: 38.1nC
On-state resistance: 8mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H010SPS-13 DMTH10H010SPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.3A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMTH10H010SPSQ-13 DMTH10H010SPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W
Application: automotive industry
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 250A
Drain current: 8.3A
Gate charge: 56.4nC
On-state resistance: 11.5mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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74LVC2G126HD4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E7109D54D460D3&compId=74LVC2G126.pdf?ci_sign=4161d9d2ba6e3a33ab5b574c9490c45adcf792b2
Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 2; CMOS; SMD; X2-DFN2010-8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Technology: CMOS
Mounting: SMD
Case: X2-DFN2010-8
Operating temperature: -40...150°C
Kind of output: 3-state
Family: LVC
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
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DMNH45M7SCT
DMNH45M7SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 155A; Idm: 200A; 96W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 155A
Pulsed drain current: 200A
Power dissipation: 96W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 36.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+143.75 грн
50+80.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMNH6008SCT DMNH6008SCT.pdf
DMNH6008SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+204.00 грн
10+101.51 грн
50+78.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMBJ78A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ78A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 86.7÷99.7V; 4.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...99.7V
Max. forward impulse current: 4.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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AP130-33YG-13 AP130.pdf
AP130-33YG-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 0.3A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.7...5.5V
на замовлення 1692 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.18 грн
15+27.81 грн
25+25.26 грн
100+22.06 грн
250+20.38 грн
500+19.18 грн
1000+18.14 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
DPS1135FIA-13 DPS1135.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 5A; Ch: 1; SMD; VQFN17; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: USB switch
Output current: 5A
Number of channels: 1
Mounting: SMD
Case: VQFN17
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4...24V DC
Active logical level: high
Operating temperature: -40...125°C
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SMBJ200A-13-F ds19002.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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B340AX-13 B340AX.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
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FES1GE FES1GE.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Type of diode: rectifying
Mounting: SMD
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SMBJ85A-13-F SMBJ_ser.pdf
SMBJ85A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.66 грн
25+16.15 грн
29+13.83 грн
38+10.55 грн
100+6.79 грн
500+6.07 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
SDT30100CTFP SDT30100CT-SDT30100CTFP.pdf
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30A; Ufmax: 750mV; Ir: 100uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Max. load current: 15A
Leakage current: 0.1mA
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DMT4005SCT DMT4005SCT.pdf
DMT4005SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; Idm: 160A; 104W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49.1nC
On-state resistance: 3.8mΩ
Power dissipation: 104W
Drain current: 85A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 160A
Kind of package: tube
Case: TO220AB
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BAT400D-7-F BAT400D.pdf
BAT400D-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.5A; reel,tape; 450mW
Mounting: SMD
Type of diode: Schottky rectifying
Capacitance: 125pF
Leakage current: 50µA
Power dissipation: 0.45W
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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DMT4002LPS-13 DMT4002LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 116.1nC
On-state resistance: 3.1mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 200A
Kind of package: 13 inch reel; tape
Case: PowerDI5060-8
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DMT4003SCT DMT4003SCT.pdf
DMT4003SCT
Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 75.6nC
On-state resistance: 2.4mΩ
Power dissipation: 156W
Drain current: 164A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 350A
Kind of package: tube
Case: TO220AB
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