Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (75031) > Сторінка 1245 з 1251
Фото | Назва | Виробник | Інформація |
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AP431SANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
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AP431SBN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
на замовлення 2275 шт: термін постачання 21-30 дні (днів) |
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AP431SBNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
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AP431SHAN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.495...36V |
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AP431SHANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.495...36V |
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ZDT6753TA | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
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ZDT6753TC | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
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FZT758TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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ZXGD3003E6TA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
на замовлення 2914 шт: термін постачання 21-30 дні (днів) |
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B530CQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 100A Semiconductor structure: single diode Case: SMC Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Application: automotive industry Capacitance: 300pF Reverse recovery time: 16ns Load current: 5A Max. forward voltage: 0.55V |
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ZXGD3108N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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DESD32VS2SO-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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1SMB5929B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 2620 шт: термін постачання 21-30 дні (днів) |
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DMT47M2SFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Kind of channel: enhanced |
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DMT6017LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W Mounting: SMD Drain-source voltage: 65V Drain current: 29A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.3nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 140A Case: PowerDI3333-8 |
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KBJ402G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A Electrical mounting: THT Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 120A Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: KBJ Leads: flat pin |
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KBJ404G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A Electrical mounting: THT Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 120A Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: KBJ Leads: flat pin |
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UDZ11B-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 11V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
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DT1446-04V-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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DMP2069UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET |
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DMP2069UFY4Q-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW Case: X2-DFN2015-3 Mounting: SMD On-state resistance: 90mΩ Kind of package: reel; tape Power dissipation: 0.53W Polarisation: unipolar Gate charge: 9.1nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -12A Drain-source voltage: -20V Drain current: -2.2A Type of transistor: P-MOSFET |
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AP22913W6-7 | DIODES INCORPORATED |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: SOT26 Output current: 2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high |
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DM1231-02SO-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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DMN32D2LDF-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.4A Power dissipation: 0.28W Case: SOT353 Gate-source voltage: ±10V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common source Features of semiconductor devices: ESD protected gate |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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ZXMHC10A07T8TA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
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B130LB-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape Mounting: SMD Case: SMB Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 90pF Max. off-state voltage: 30V Max. forward voltage: 0.445V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A |
на замовлення 5489 шт: термін постачання 21-30 дні (днів) |
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MMBT6427-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 40V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
на замовлення 3078 шт: термін постачання 21-30 дні (днів) |
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SMCJ8.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 110.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2806 шт: термін постачання 21-30 дні (днів) |
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SMCJ8.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; bidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 110.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMCJ8.5A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.4V Max. forward impulse current: 104.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMCJ85A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 10.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2426 шт: термін постачання 21-30 дні (днів) |
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DMN3033LSN-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Case: SC59 Drain-source voltage: 30V Drain current: 5A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
на замовлення 1065 шт: термін постачання 21-30 дні (днів) |
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DMN3033LSNQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Gate charge: 10.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Case: SC59 Drain-source voltage: 30V Drain current: 5A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
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BCW68HTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.31W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 5180 шт: термін постачання 21-30 дні (днів) |
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DDTC114TUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ |
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DDTC114YE-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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DDTC123TCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 2.2kΩ Mounting: SMD Case: SOT23 Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar |
на замовлення 3675 шт: термін постачання 21-30 дні (днів) |
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DDTC123YCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
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AP7313-12SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.2V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
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AP7313-15SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.5V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
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AP7313-20SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
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AP7313-25SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.5V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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AP7313-28SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.8V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
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AP7313-30SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
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SBR0240LP-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 40V; 0.25A; X1-DFN1006-2 Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Max. forward voltage: 0.59V Case: X1-DFN1006-2 Kind of package: reel; tape Max. forward impulse current: 5A |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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SBR02U100LP-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 0.25A; X1-DFN1006-2 Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Semiconductor structure: single diode Max. forward voltage: 0.8V Case: X1-DFN1006-2 Kind of package: reel; tape Max. forward impulse current: 5A |
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DMN2005LPK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.44A Power dissipation: 0.45W Case: X1-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 1175 шт: термін постачання 21-30 дні (днів) |
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SD03C-7 | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 3.3V Breakdown voltage: 4V Max. forward impulse current: 55A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 150pF |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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DMC1030UFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar |
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DMC1030UFDBQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar |
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ZXGD3005E6TA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
на замовлення 2939 шт: термін постачання 21-30 дні (днів) |
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ZXGD3009E6TA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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ZXGD3104N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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ZXGD3105N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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ZXGD3107N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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ZXGD3111N7TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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ZXGD3112N7TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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ZXGD3113W6-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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ZXGD3114N7TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver |
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AL5810D-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
товар відсутній |
AP431SANTR-G1 |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товар відсутній
AP431SBN1TR-G1 |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
на замовлення 2275 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 11.61 грн |
50+ | 7.26 грн |
100+ | 6.33 грн |
150+ | 5.77 грн |
405+ | 5.45 грн |
AP431SBNTR-G1 |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
товар відсутній
AP431SHAN1TR-G1 |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
товар відсутній
AP431SHANTR-G1 |
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.495...36V
товар відсутній
ZDT6753TA |
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
товар відсутній
ZDT6753TC |
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
товар відсутній
FZT758TA |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 48 грн |
44+ | 19.48 грн |
120+ | 18.4 грн |
ZXGD3003E6TA |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2914 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 42.58 грн |
16+ | 23.87 грн |
25+ | 21.71 грн |
52+ | 16.53 грн |
141+ | 15.67 грн |
B530CQ-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 300pF
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 300pF
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
товар відсутній
ZXGD3108N8TC |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
DESD32VS2SO-7 |
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
1SMB5929B-13 |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 2620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 17.96 грн |
45+ | 8.55 грн |
100+ | 7.55 грн |
130+ | 6.52 грн |
355+ | 6.16 грн |
DMT47M2SFVWQ-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
товар відсутній
DMT6017LFV-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
товар відсутній
KBJ402G |
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
товар відсутній
KBJ404G |
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
товар відсутній
UDZ11B-7 |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
товар відсутній
DT1446-04V-7 |
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
DMP2069UFY4-7 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
товар відсутній
DMP2069UFY4Q-7 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -12A; 530mW
Case: X2-DFN2015-3
Mounting: SMD
On-state resistance: 90mΩ
Kind of package: reel; tape
Power dissipation: 0.53W
Polarisation: unipolar
Gate charge: 9.1nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -12A
Drain-source voltage: -20V
Drain current: -2.2A
Type of transistor: P-MOSFET
товар відсутній
AP22913W6-7 |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
товар відсутній
DM1231-02SO-7 |
Виробник: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
товар відсутній
DMN32D2LDF-7 |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.28W
Case: SOT353
Gate-source voltage: ±10V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 12.39 грн |
60+ | 6.3 грн |
100+ | 5.02 грн |
195+ | 4.42 грн |
500+ | 4.21 грн |
525+ | 4.18 грн |
ZXMHC10A07T8TA |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
B130LB-13-F |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 90pF
Max. off-state voltage: 30V
Max. forward voltage: 0.445V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 90pF
Max. off-state voltage: 30V
Max. forward voltage: 0.445V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
на замовлення 5489 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.22 грн |
60+ | 6.33 грн |
100+ | 5.61 грн |
175+ | 4.85 грн |
475+ | 4.59 грн |
MMBT6427-7-F |
Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
на замовлення 3078 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
125+ | 3.1 грн |
150+ | 2.58 грн |
425+ | 2.02 грн |
1150+ | 1.91 грн |
SMCJ8.0A-13-F |
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2806 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 20.9 грн |
29+ | 12.8 грн |
79+ | 10.64 грн |
216+ | 10.06 грн |
SMCJ8.0CA-13-F |
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
SMCJ8.5A-13-F |
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 104.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 104.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товар відсутній
SMCJ85A-13-F |
Виробник: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2426 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 20.36 грн |
29+ | 12.72 грн |
77+ | 10.87 грн |
212+ | 10.27 грн |
500+ | 10.21 грн |
DMN3033LSN-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
на замовлення 1065 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 12.8 грн |
90+ | 9.78 грн |
235+ | 9.27 грн |
DMN3033LSNQ-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Gate charge: 10.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Case: SC59
Drain-source voltage: 30V
Drain current: 5A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
BCW68HTA |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 5180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 27.1 грн |
20+ | 18.26 грн |
25+ | 14.45 грн |
100+ | 6.69 грн |
189+ | 4.47 грн |
520+ | 4.23 грн |
DDTC114TUA-7-F |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
товар відсутній
DDTC114YE-7-F |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товар відсутній
DDTC123TCA-7-F |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 2.2kΩ
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 2.2kΩ
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
на замовлення 3675 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
175+ | 2.35 грн |
275+ | 1.42 грн |
500+ | 1.26 грн |
725+ | 1.19 грн |
1950+ | 1.12 грн |
DDTC123YCA-7-F |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
товар відсутній
AP7313-12SAG-7 |
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
товар відсутній
AP7313-15SAG-7 |
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
товар відсутній
AP7313-20SAG-7 |
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
товар відсутній
AP7313-25SAG-7 |
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 12.85 грн |
50+ | 7.98 грн |
100+ | 7.12 грн |
135+ | 6.37 грн |
365+ | 6.02 грн |
AP7313-28SAG-7 |
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
товар відсутній
AP7313-30SAG-7 |
Виробник: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
товар відсутній
SBR0240LP-7 |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 40V; 0.25A; X1-DFN1006-2
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: X1-DFN1006-2
Kind of package: reel; tape
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 40V; 0.25A; X1-DFN1006-2
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: X1-DFN1006-2
Kind of package: reel; tape
Max. forward impulse current: 5A
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 11.92 грн |
40+ | 9.92 грн |
100+ | 8.84 грн |
105+ | 7.98 грн |
290+ | 7.55 грн |
SBR02U100LP-7 |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 0.25A; X1-DFN1006-2
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Case: X1-DFN1006-2
Kind of package: reel; tape
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 0.25A; X1-DFN1006-2
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Case: X1-DFN1006-2
Kind of package: reel; tape
Max. forward impulse current: 5A
товар відсутній
DMN2005LPK-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.44A
Power dissipation: 0.45W
Case: X1-DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 1175 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 8.67 грн |
55+ | 6.61 грн |
100+ | 5.89 грн |
382+ | 5.68 грн |
500+ | 5.46 грн |
SD03C-7 |
Виробник: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 55A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 150pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 55A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 150pF
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 24.77 грн |
36+ | 10.21 грн |
68+ | 5.32 грн |
100+ | 4.7 грн |
221+ | 3.8 грн |
606+ | 3.59 грн |
DMC1030UFDB-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
DMC1030UFDBQ-7 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Type of transistor: N-MOSFET
Polarisation: unipolar
товар відсутній
ZXGD3005E6TA |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 2939 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 36.39 грн |
18+ | 19.99 грн |
25+ | 18.12 грн |
61+ | 13.95 грн |
166+ | 13.23 грн |
ZXGD3009E6TA |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
ZXGD3104N8TC |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
ZXGD3105N8TC |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
ZXGD3107N8TC |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
ZXGD3111N7TC |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
ZXGD3112N7TC |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
ZXGD3113W6-7 |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
ZXGD3114N7TC |
Виробник: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній
AL5810D-13 |
Виробник: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
товар відсутній