Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74093) > Сторінка 284 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| DDZ30DS-7 | Diodes Incorporated |
Description: DIODE ZENER 30V 200MW SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DDZ36S-7 | Diodes Incorporated |
Description: DIODE ZENER 36V 200MW SOD323 |
на замовлення 600039000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||
| DDZ9696S-7 | Diodes Incorporated |
Description: DIODE ZENER 9.1V 200MW SOD323 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||
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DDZ9707T-7 | Diodes Incorporated |
Description: DIODE ZENER 20V 150MW SOD523 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDZ9708T-7 | Diodes Incorporated |
Description: DIODE ZENER 22V 150MW SOD523 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDZ9712-7 | Diodes Incorporated |
Description: DIODE ZENER 28V 500MW SOD123 |
на замовлення 300078000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DDZ9716T-7 | Diodes Incorporated |
Description: DIODE ZENER 39V 150MW SOD523 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDZX43-7 | Diodes Incorporated |
Description: DIODE ZENER 43V 300MW SOT23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DDZX8V2C-7 | Diodes Incorporated |
Description: DIODE ZENER 8.2V 300MW SOT23-3 |
на замовлення 42739000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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74HC164D14 | Diodes Incorporated |
Description: IC SR PUSH-PULL 8BIT 14-PDIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Output Type: Push-Pull Mounting Type: Through Hole Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 14-PDIP Part Status: Active Number of Bits per Element: 8 |
на замовлення 1820 шт: термін постачання 21-31 дні (днів) |
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DMN10H099SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 4.2A PWRDI3333FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 980mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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2N7002DWQ-7-F | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.23A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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AL5801W6Q-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 350MA SOT26Mounting Type: Surface Mount Voltage - Output: 1.1V ~ 100V Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Dimming: PWM Supplier Device Package: SOT-26 Internal Switch(s): Yes Current - Output / Channel: 350mA Applications: Signage Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Number of Outputs: 1 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Voltage - Supply (Max): 20V Voltage - Supply (Min): 3.5V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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DMC1028UFDB-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V/20V 6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.36W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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DMC1029UFDB-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 5.6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMC2041UFDB-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 4.7A 6UDFNRds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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DMC3400SDW-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.65A SOT363Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Drain to Source Voltage (Vdss): 30V Power - Max: 310mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 153000 шт: термін постачання 21-31 дні (днів) |
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DMN1029UFDB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 12V 5.6A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SVT-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.6A TSOT26Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
на замовлення 873000 шт: термін постачання 21-31 дні (днів) |
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DMN2041UFDB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 4.7A 6UDFN |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DMN2046U-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.4A SOT23Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
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DMN3042L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.8A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
на замовлення 146885 шт: термін постачання 21-31 дні (днів) |
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DMN32D4SDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.65A SOT363Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA Drain to Source Voltage (Vdss): 30V Power - Max: 290mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 152468 шт: термін постачання 21-31 дні (днів) |
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DMP1046UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 12V 3.8A 6UDFNPart Status: Active Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 12V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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DMP2200UDW-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.9A SOT363Drain to Source Voltage (Vdss): 20V Power - Max: 450mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Current - Continuous Drain (Id) @ 25°C: 900mA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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DMP3068L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.3A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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DMP4065S-7 | Diodes Incorporated |
Description: MOSFET P-CH 40V 2.4A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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DSS4160TQ-7 | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 725 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FMMT720QTA | Diodes Incorporated |
Description: TRANS PNP 40V 1.5A SOT23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
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S1MWF-7 | Diodes Incorporated |
Description: DIODE GEN PURP 1KV 1A SOD123F |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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SDM2U20SD3-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 20V 2A SOD323Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 200 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 54pF @ 5V, 1MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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B240Q-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A SMBQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 200pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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B540CQ-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 5A SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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ZLPM8014JB20TC | Diodes Incorporated |
Description: IC LNB CTLR PWR SUPPLY 20UQFNSupplier Device Package: U-QFN4040-20 Current - Supply: 6mA Applications: Set-Top Boxes Voltage - Supply: 8V ~ 16V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PDS5100HQ-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 5A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 9750 шт: термін постачання 21-31 дні (днів) |
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DMN61D8L-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 470MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 390mW (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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DMN10H099SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 4.2A PWRDI3333Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 980mW (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 11990 шт: термін постачання 21-31 дні (днів) |
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2N7002DWQ-7-F | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.23A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 2580 шт: термін постачання 21-31 дні (днів) |
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AL5801W6Q-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 350MA SOT26Qualification: AEC-Q101 Grade: Automotive Part Status: Active Voltage - Supply (Max): 20V Voltage - Supply (Min): 3.5V Dimming: PWM Supplier Device Package: SOT-26 Internal Switch(s): Yes Current - Output / Channel: 350mA Applications: Signage Operating Temperature: -40°C ~ 125°C (TA) Type: Linear Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 1.1V ~ 100V Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 208 шт: термін постачання 21-31 дні (днів) |
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DMC1028UFDB-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V/20V 6A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.36W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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DMC1029UFDB-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 5.6A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 11940 шт: термін постачання 21-31 дні (днів) |
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DMC2041UFDB-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 4.7A 6UDFNPart Status: Active Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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DMC3400SDW-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.65A SOT363Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Drain to Source Voltage (Vdss): 30V Power - Max: 310mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 153919 шт: термін постачання 21-31 дні (днів) |
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DMN1029UFDB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 12V 5.6A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
на замовлення 22863 шт: термін постачання 21-31 дні (днів) |
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DMN10H170SVT-7 | Diodes Incorporated |
Description: MOSFET N-CH 100V 2.6A TSOT26Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 877630 шт: термін постачання 21-31 дні (днів) |
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DMN2041UFDB-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 4.7A 6UDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMN2046U-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.4A SOT23Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 126503 шт: термін постачання 21-31 дні (днів) |
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DMN3042L-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.8A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
на замовлення 146885 шт: термін постачання 21-31 дні (днів) |
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DMN32D4SDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.65A SOT363Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA Drain to Source Voltage (Vdss): 30V Power - Max: 290mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SOT-363 |
на замовлення 152468 шт: термін постачання 21-31 дні (днів) |
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DMP1046UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 12V 3.8A 6UDFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Current - Continuous Drain (Id) @ 25°C: 3.8A Drain to Source Voltage (Vdss): 12V Power - Max: 1.4W |
на замовлення 14097 шт: термін постачання 21-31 дні (днів) |
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DMP2060UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.2A 6UDFNSupplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2075 шт: термін постачання 21-31 дні (днів) |
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DMP2200UDW-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 0.9A SOT363Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Current - Continuous Drain (Id) @ 25°C: 900mA Drain to Source Voltage (Vdss): 20V Power - Max: 450mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMP3068L-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 3.3A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMP4065S-7 | Diodes Incorporated |
Description: MOSFET P-CH 40V 2.4A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V |
на замовлення 25935 шт: термін постачання 21-31 дні (днів) |
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DSS4160TQ-7 | Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 725 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5975 шт: термін постачання 21-31 дні (днів) |
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FMMT720QTA | Diodes Incorporated |
Description: TRANS PNP 40V 1.5A SOT23-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 86705 шт: термін постачання 21-31 дні (днів) |
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S1MWF-7 | Diodes Incorporated |
Description: DIODE GEN PURP 1KV 1A SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SDM2U20SD3-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 20V 2A SOD323Current - Reverse Leakage @ Vr: 200 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 54pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 4916 шт: термін постачання 21-31 дні (днів) |
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B240Q-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 2A SMBQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SMB Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 200pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 12176 шт: термін постачання 21-31 дні (днів) |
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B540CQ-13-F | Diodes Incorporated |
Description: DIODE SCHOTTKY 40V 5A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 19979 шт: термін постачання 21-31 дні (днів) |
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| DDZ30DS-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 30V 200MW SOD323
Description: DIODE ZENER 30V 200MW SOD323
товару немає в наявності
В кошику
од. на суму грн.
| DDZ36S-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 36V 200MW SOD323
Description: DIODE ZENER 36V 200MW SOD323
на замовлення 600039000 шт:
термін постачання 21-31 дні (днів)
| DDZ9696S-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 9.1V 200MW SOD323
Description: DIODE ZENER 9.1V 200MW SOD323
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| DDZ9707T-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 20V 150MW SOD523
Description: DIODE ZENER 20V 150MW SOD523
товару немає в наявності
В кошику
од. на суму грн.
| DDZ9708T-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 22V 150MW SOD523
Description: DIODE ZENER 22V 150MW SOD523
товару немає в наявності
В кошику
од. на суму грн.
| DDZ9712-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 28V 500MW SOD123
Description: DIODE ZENER 28V 500MW SOD123
на замовлення 300078000 шт:
термін постачання 21-31 дні (днів)
| DDZ9716T-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 39V 150MW SOD523
Description: DIODE ZENER 39V 150MW SOD523
товару немає в наявності
В кошику
од. на суму грн.
| DDZX43-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 43V 300MW SOT23-3
Description: DIODE ZENER 43V 300MW SOT23-3
товару немає в наявності
В кошику
од. на суму грн.
| DDZX8V2C-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23-3
Description: DIODE ZENER 8.2V 300MW SOT23-3
на замовлення 42739000 шт:
термін постачання 21-31 дні (днів)
| 74HC164D14 |
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Виробник: Diodes Incorporated
Description: IC SR PUSH-PULL 8BIT 14-PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Bits per Element: 8
Description: IC SR PUSH-PULL 8BIT 14-PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: Push-Pull
Mounting Type: Through Hole
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-PDIP
Part Status: Active
Number of Bits per Element: 8
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.83 грн |
| 10+ | 47.46 грн |
| 25+ | 42.76 грн |
| 50+ | 37.48 грн |
| 100+ | 35.28 грн |
| DMN10H099SFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A PWRDI3333
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Description: MOSFET N-CH 100V 4.2A PWRDI3333
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 19.58 грн |
| 2N7002DWQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.23A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 60V 0.23A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AL5801W6Q-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA SOT26
Mounting Type: Surface Mount
Voltage - Output: 1.1V ~ 100V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 350mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Number of Outputs: 1
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 3.5V
Description: IC LED DRVR LIN PWM 350MA SOT26
Mounting Type: Surface Mount
Voltage - Output: 1.1V ~ 100V
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 350mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Number of Outputs: 1
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 3.5V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC1028UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC1029UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.47 грн |
| 9000+ | 20.90 грн |
| DMC2041UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMC3400SDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 153000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.40 грн |
| 6000+ | 3.82 грн |
| 9000+ | 3.61 грн |
| 15000+ | 3.17 грн |
| 21000+ | 3.04 грн |
| 30000+ | 2.92 грн |
| DMN1029UFDB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.28 грн |
| 9000+ | 9.42 грн |
| DMN10H170SVT-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
на замовлення 873000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.37 грн |
| 6000+ | 10.57 грн |
| 9000+ | 10.19 грн |
| 15000+ | 9.53 грн |
| 21000+ | 9.20 грн |
| DMN2041UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| DMN2046U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 3.4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.84 грн |
| 9000+ | 4.79 грн |
| DMN3042L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 146885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.83 грн |
| 9000+ | 6.48 грн |
| DMN32D4SDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 0.65A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 152468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.08 грн |
| 6000+ | 5.60 грн |
| 9000+ | 4.84 грн |
| 30000+ | 4.46 грн |
| 75000+ | 3.69 грн |
| 150000+ | 3.63 грн |
| DMP1046UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.24 грн |
| 6000+ | 8.12 грн |
| 9000+ | 7.72 грн |
| DMP2200UDW-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Description: MOSFET 2P-CH 20V 0.9A SOT363
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP3068L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP4065S-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.10 грн |
| 6000+ | 7.09 грн |
| 9000+ | 6.73 грн |
| 15000+ | 5.93 грн |
| 21000+ | 5.71 грн |
| DSS4160TQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.03 грн |
| FMMT720QTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.94 грн |
| 6000+ | 11.53 грн |
| 9000+ | 11.06 грн |
| 15000+ | 9.97 грн |
| S1MWF-7 |
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Виробник: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Description: DIODE GEN PURP 1KV 1A SOD123F
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SDM2U20SD3-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 2A SOD323
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
Description: DIODE SCHOTTKY 20V 2A SOD323
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.14 грн |
| B240Q-13-F |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.84 грн |
| 9000+ | 8.20 грн |
| B540CQ-13-F |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.64 грн |
| 9000+ | 13.21 грн |
| ZLPM8014JB20TC |
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Виробник: Diodes Incorporated
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Supplier Device Package: U-QFN4040-20
Current - Supply: 6mA
Applications: Set-Top Boxes
Voltage - Supply: 8V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC LNB CTLR PWR SUPPLY 20UQFN
Supplier Device Package: U-QFN4040-20
Current - Supply: 6mA
Applications: Set-Top Boxes
Voltage - Supply: 8V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PDS5100HQ-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Qualification: AEC-Q101
на замовлення 9750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 21.84 грн |
| DMN61D8L-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN10H099SFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 4.2A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 980mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 11990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.63 грн |
| 10+ | 42.89 грн |
| 100+ | 32.90 грн |
| 500+ | 24.40 грн |
| 1000+ | 19.52 грн |
| 2N7002DWQ-7-F |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.23A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 60V 0.23A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 310mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 2580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.65 грн |
| 17+ | 18.59 грн |
| 25+ | 15.42 грн |
| 50+ | 12.60 грн |
| 100+ | 11.00 грн |
| AL5801W6Q-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA SOT26
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 3.5V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 350mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 1.1V ~ 100V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: IC LED DRVR LIN PWM 350MA SOT26
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Voltage - Supply (Max): 20V
Voltage - Supply (Min): 3.5V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 350mA
Applications: Signage
Operating Temperature: -40°C ~ 125°C (TA)
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 1.1V ~ 100V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.14 грн |
| 12+ | 27.58 грн |
| 25+ | 24.62 грн |
| 50+ | 21.44 грн |
| 100+ | 20.06 грн |
| DMC1028UFDB-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 12V/20V 6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.70 грн |
| 10+ | 48.91 грн |
| DMC1029UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 11940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.06 грн |
| 10+ | 61.79 грн |
| 25+ | 51.96 грн |
| 50+ | 43.04 грн |
| 100+ | 38.19 грн |
| DMC2041UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 4.7A 6UDFN
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.02 грн |
| 10+ | 64.07 грн |
| 25+ | 53.91 грн |
| 50+ | 44.66 грн |
| 100+ | 39.65 грн |
| DMC3400SDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 0.65A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 310mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 153919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.53 грн |
| 22+ | 14.40 грн |
| 100+ | 9.02 грн |
| 500+ | 6.28 грн |
| 1000+ | 5.57 грн |
| DMN1029UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET 2N-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
на замовлення 22863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.05 грн |
| 11+ | 29.56 грн |
| 25+ | 24.56 грн |
| 50+ | 20.15 грн |
| 100+ | 17.70 грн |
| DMN10H170SVT-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2.6A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 877630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.60 грн |
| 11+ | 29.26 грн |
| 100+ | 20.44 грн |
| 500+ | 14.91 грн |
| 1000+ | 13.42 грн |
| DMN2041UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
Description: MOSFET 2N-CH 20V 4.7A 6UDFN
товару немає в наявності
В кошику
од. на суму грн.
| DMN2046U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3.4A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 126503 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.11 грн |
| 20+ | 15.39 грн |
| 25+ | 12.74 грн |
| 50+ | 10.40 грн |
| 100+ | 9.06 грн |
| DMN3042L-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 146885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 21.18 грн |
| 25+ | 17.58 грн |
| 50+ | 14.39 грн |
| 100+ | 12.58 грн |
| DMN32D4SDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.65A SOT363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 30V 0.65A SOT363
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 650mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 290mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
на замовлення 152468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.02 грн |
| 14+ | 22.78 грн |
| 100+ | 11.50 грн |
| 500+ | 8.80 грн |
| 1000+ | 6.53 грн |
| DMP1046UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.4W
на замовлення 14097 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.93 грн |
| 13+ | 24.84 грн |
| 100+ | 15.91 грн |
| 500+ | 11.28 грн |
| 1000+ | 10.11 грн |
| DMP2060UFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2075 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 56.23 грн |
| 25+ | 47.33 грн |
| 50+ | 39.20 грн |
| 100+ | 34.81 грн |
| DMP2200UDW-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.9A SOT363
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET 2P-CH 20V 0.9A SOT363
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 900mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 450mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| DMP3068L-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
Description: MOSFET P-CH 30V 3.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP4065S-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Description: MOSFET P-CH 40V 2.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
на замовлення 25935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.39 грн |
| 15+ | 21.64 грн |
| 100+ | 13.75 грн |
| 500+ | 9.69 грн |
| 1000+ | 8.65 грн |
| DSS4160TQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 60V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 725 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.14 грн |
| 13+ | 24.23 грн |
| 25+ | 20.11 грн |
| 50+ | 16.47 грн |
| 100+ | 14.42 грн |
| FMMT720QTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 40V 1.5A SOT23-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 86705 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.89 грн |
| 11+ | 29.33 грн |
| 100+ | 19.95 грн |
| 500+ | 14.72 грн |
| 1000+ | 13.40 грн |
| S1MWF-7 |
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Виробник: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Description: DIODE GEN PURP 1KV 1A SOD123F
товару немає в наявності
В кошику
од. на суму грн.
| SDM2U20SD3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 2A SOD323
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 2A SOD323
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 54pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 4916 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.20 грн |
| 27+ | 11.58 грн |
| 100+ | 9.43 грн |
| 500+ | 6.68 грн |
| 1000+ | 5.93 грн |
| B240Q-13-F |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2A SMB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 12176 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.31 грн |
| 12+ | 25.98 грн |
| 25+ | 21.61 грн |
| 50+ | 17.70 грн |
| 100+ | 15.54 грн |
| B540CQ-13-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.67 грн |
| 10+ | 39.24 грн |
| 25+ | 32.76 грн |
| 50+ | 27.01 грн |
| 100+ | 23.82 грн |

















