Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78507) > Сторінка 300 з 1309
Фото | Назва | Виробник | Інформація |
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DMN4026SK3-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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DMP4047SK3-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V |
на замовлення 42500 шт: термін постачання 21-31 дні (днів) |
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AH8503-FDC-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Features: Sleep Mode Package / Case: 6-UDFN Exposed Pad Output Type: Analog Voltage Mounting Type: Surface Mount Axis: Single Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.6V ~ 3.6V Technology: Hall Effect Resolution: 8 b Sensing Range: ±40mT Current - Output (Max): 10mA Current - Supply (Max): 1.5mA Supplier Device Package: U-DFN2020-6 (Type C) Part Status: Active |
на замовлення 30175 шт: термін постачання 21-31 дні (днів) |
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AP65550FN-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 650kHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: U-DFN3030-10 Synchronous Rectifier: Yes Voltage - Output (Max): 6V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.76V |
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AP9211SA-AA-HAC-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: U-DFN2030-6 (Type C) Fault Protection: Over Current, Over Voltage Part Status: Active |
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AP9211SA-AF-HAC-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: U-DFN2030-6 (Type C) Fault Protection: Over Current, Over Voltage Part Status: Active |
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DLLFSD01LP3-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: X3-DFN0603-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
на замовлення 1753969 шт: термін постачання 21-31 дні (днів) |
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DMN30H4D0LFDE-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V |
на замовлення 238416 шт: термін постачання 21-31 дні (днів) |
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ZXTR2105F-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 89mA Operating Temperature: -65°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 800 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 46dB (100Hz) Current - Supply (Max): 6.7 mA Grade: Automotive Qualification: AEC-Q101 |
на замовлення 120334 шт: термін постачання 21-31 дні (днів) |
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AL8821SP-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 36V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 2A (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 8-SO-EP Dimming: Triac Voltage - Supply (Min): 5V Voltage - Supply (Max): 36V Part Status: Obsolete |
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AP3776BMTR-G1 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V Supplier Device Package: 8-SO Fault Protection: Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 13 V Part Status: Active |
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APR34309CAMPTR-G1 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V ~ 6V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SO-EP Current - Supply: 100 µA DigiKey Programmable: Not Verified |
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DMN4026SK3-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V |
на замовлення 76141 шт: термін постачання 21-31 дні (днів) |
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DMP4047SK3-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V |
на замовлення 45320 шт: термін постачання 21-31 дні (днів) |
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DMP4047SSD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 237497 шт: термін постачання 21-31 дні (днів) |
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SBRT60U50CT | Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 30 A Current - Reverse Leakage @ Vr: 700 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMN3035LWN-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 770mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: V-DFN3020-8 (Type N) Part Status: Active |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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DMN3053L-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DMN6075S-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
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DMP2021UFDF-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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DMN3016LPS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 1.18W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
на замовлення 2874 шт: термін постачання 21-31 дні (днів) |
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DMN3035LWN-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 770mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: V-DFN3020-8 (Type N) Part Status: Active |
на замовлення 80638 шт: термін постачання 21-31 дні (днів) |
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DMN3053L-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V |
на замовлення 8659 шт: термін постачання 21-31 дні (днів) |
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DMN6075S-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
на замовлення 130294 шт: термін постачання 21-31 дні (днів) |
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DMP2021UFDF-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
на замовлення 62684 шт: термін постачання 21-31 дні (днів) |
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DMN3053L-13 | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMP2021UFDF-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4448WQ-7-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V Qualification: AEC-Q101 |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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DMG6602SVTQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
на замовлення 1257000 шт: термін постачання 21-31 дні (днів) |
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DDC143ZU-7-F | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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1N4448WQ-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V Qualification: AEC-Q101 |
на замовлення 52392 шт: термін постачання 21-31 дні (днів) |
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DMG6602SVTQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
на замовлення 1259051 шт: термін постачання 21-31 дні (днів) |
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DDC143ZU-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 72768 шт: термін постачання 21-31 дні (днів) |
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DDC144TH-7-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 170471 шт: термін постачання 21-31 дні (днів) |
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DMN61D8LVTQ-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 Part Status: Active |
на замовлення 1101000 шт: термін постачання 21-31 дні (днів) |
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DMN61D8LVTQ-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 Part Status: Active |
на замовлення 1102215 шт: термін постачання 21-31 дні (днів) |
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DMN61D8LVTQ-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMN61D8LVT-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 Part Status: Active |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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DMN61D8L-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Power Dissipation (Max): 390mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V |
на замовлення 459000 шт: термін постачання 21-31 дні (днів) |
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DMN61D8LVT-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSOT-26 Part Status: Active |
на замовлення 62906 шт: термін постачання 21-31 дні (днів) |
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DMN61D8L-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 470mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Power Dissipation (Max): 390mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V |
на замовлення 459941 шт: термін постачання 21-31 дні (днів) |
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PAM8905PZR | Diodes Incorporated |
![]() Features: Short-Circuit and Thermal Protection Packaging: Cut Tape (CT) Package / Case: 12-UFBGA, WLBGA Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.8V ~ 5.2V Max Output Power x Channels @ Load: 1.9W x 1 @ 8Ohm Supplier Device Package: U-WLB1520-12 Part Status: Active |
на замовлення 2954 шт: термін постачання 21-31 дні (днів) |
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AL3065S16-13 | Diodes Incorporated |
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на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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AL1678-10BS7-13 | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AL3065S16-13 | Diodes Incorporated |
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на замовлення 17210 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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AL1678-10BS7-13 | Diodes Incorporated |
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на замовлення 3995 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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AP22850SH8-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Features: Load Discharge, Power Good, Slew Rate Controlled Package / Case: 8-VFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 21mOhm Voltage - Load: 4.5V ~ 11V Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WDFN (2x2) Part Status: Active |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
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AP22850SH8-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Features: Load Discharge, Power Good, Slew Rate Controlled Package / Case: 8-VFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 21mOhm Voltage - Load: 4.5V ~ 11V Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-WDFN (2x2) Part Status: Active |
на замовлення 129263 шт: термін постачання 21-31 дні (днів) |
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APT13003DZTR-G1 | Diodes Incorporated |
Description: TRANS NPN 450V 1.5A TO-92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 1.1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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APT13003HZTR-G1 | Diodes Incorporated |
Description: TRANS NPN 465V 1.5A TO-92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 465 V Power - Max: 1.1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZTX956STZ | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 110MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.58 W |
на замовлення 3850 шт: термін постачання 21-31 дні (днів) |
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ZX5T851ASTZ | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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BAS70LP-7B | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Schottky Capacitance @ Vr, F: 1pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA Current - Reverse Leakage @ Vr: 10 µA @ 70 V |
на замовлення 637908 шт: термін постачання 21-31 дні (днів) |
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BZT52C5V6-13-F | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Tolerance: ±7% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 394923 шт: термін постачання 21-31 дні (днів) |
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BZX84B27-7-F | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84B8V2-7-F | Diodes Incorporated |
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на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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DMN3190LDW-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 311796 шт: термін постачання 21-31 дні (днів) |
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DMP3099L-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V Power Dissipation (Max): 1.08W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V |
на замовлення 327815 шт: термін постачання 21-31 дні (днів) |
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DMP32D4S-7 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V |
на замовлення 66050 шт: термін постачання 21-31 дні (днів) |
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ZXMC3F31DN8TA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
на замовлення 23500 шт: термін постачання 21-31 дні (днів) |
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DMN4026SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 28A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
Description: MOSFET N-CH 40V 28A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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2500+ | 15.83 грн |
5000+ | 14.13 грн |
7500+ | 13.68 грн |
DMP4047SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V
Description: MOSFET P-CH 40V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V
на замовлення 42500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 17.18 грн |
5000+ | 15.21 грн |
7500+ | 14.53 грн |
12500+ | 13.32 грн |
17500+ | 12.74 грн |
AH8503-FDC-7 |
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Виробник: Diodes Incorporated
Description: SENSOR HALL ANALOG 6UDFN
Packaging: Cut Tape (CT)
Features: Sleep Mode
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Resolution: 8 b
Sensing Range: ±40mT
Current - Output (Max): 10mA
Current - Supply (Max): 1.5mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
Description: SENSOR HALL ANALOG 6UDFN
Packaging: Cut Tape (CT)
Features: Sleep Mode
Package / Case: 6-UDFN Exposed Pad
Output Type: Analog Voltage
Mounting Type: Surface Mount
Axis: Single
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 3.6V
Technology: Hall Effect
Resolution: 8 b
Sensing Range: ±40mT
Current - Output (Max): 10mA
Current - Supply (Max): 1.5mA
Supplier Device Package: U-DFN2020-6 (Type C)
Part Status: Active
на замовлення 30175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.31 грн |
6+ | 55.76 грн |
10+ | 52.32 грн |
25+ | 45.34 грн |
50+ | 42.82 грн |
100+ | 40.57 грн |
500+ | 35.63 грн |
1000+ | 34.10 грн |
AP65550FN-7 |
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Виробник: Diodes Incorporated
Description: IC REG BUCK ADJ 5A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: U-DFN3030-10
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.76V
Description: IC REG BUCK ADJ 5A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: U-DFN3030-10
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.76V
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AP9211SA-AA-HAC-7 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
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AP9211SA-AF-HAC-7 |
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Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: U-DFN2030-6 (Type C)
Fault Protection: Over Current, Over Voltage
Part Status: Active
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DLLFSD01LP3-7 |
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Виробник: Diodes Incorporated
Description: DIODE STD 80V 100MA X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Description: DIODE STD 80V 100MA X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
на замовлення 1753969 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.94 грн |
19+ | 16.00 грн |
25+ | 13.10 грн |
100+ | 9.18 грн |
250+ | 7.63 грн |
500+ | 6.68 грн |
1000+ | 5.78 грн |
2500+ | 4.94 грн |
5000+ | 4.42 грн |
DMN30H4D0LFDE-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 300V 550MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
Description: MOSFET N-CH 300V 550MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
на замовлення 238416 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 52.01 грн |
10+ | 34.01 грн |
100+ | 22.44 грн |
500+ | 16.09 грн |
1000+ | 14.49 грн |
ZXTR2105F-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 89MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q101
Description: IC REG LINEAR 5V 89MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 800 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q101
на замовлення 120334 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 58.22 грн |
10+ | 33.56 грн |
25+ | 27.69 грн |
100+ | 19.75 грн |
250+ | 16.69 грн |
500+ | 14.81 грн |
1000+ | 13.02 грн |
AL8821SP-13 |
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Виробник: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 2A (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Triac
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 36V
Part Status: Obsolete
Description: IC LED DRIVER OFFL TRIAC 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 2A (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-SO-EP
Dimming: Triac
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 36V
Part Status: Obsolete
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AP3776BMTR-G1 |
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Виробник: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Part Status: Active
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APR34309CAMPTR-G1 |
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Виробник: Diodes Incorporated
Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SO-EP
Current - Supply: 100 µA
DigiKey Programmable: Not Verified
Description: IC RECT CTLR AC/DC SYNCH 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V ~ 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SO-EP
Current - Supply: 100 µA
DigiKey Programmable: Not Verified
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од. на суму грн.
DMN4026SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 28A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
Description: MOSFET N-CH 40V 28A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1181 pF @ 20 V
на замовлення 76141 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 53.56 грн |
10+ | 34.31 грн |
100+ | 23.55 грн |
500+ | 17.49 грн |
1000+ | 15.97 грн |
DMP4047SK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V
Description: MOSFET P-CH 40V 20A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1328 pF @ 20 V
на замовлення 45320 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 69.09 грн |
10+ | 41.19 грн |
100+ | 26.85 грн |
500+ | 19.41 грн |
1000+ | 17.54 грн |
DMP4047SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 40V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 40V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 237497 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 47.35 грн |
10+ | 39.02 грн |
100+ | 27.01 грн |
500+ | 21.18 грн |
1000+ | 18.03 грн |
SBRT60U50CT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 50V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 30 A
Current - Reverse Leakage @ Vr: 700 µA @ 50 V
Description: DIODE ARRAY SBR 50V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 30 A
Current - Reverse Leakage @ Vr: 700 µA @ 50 V
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DMN3035LWN-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.66 грн |
6000+ | 11.17 грн |
9000+ | 10.59 грн |
15000+ | 9.46 грн |
21000+ | 9.16 грн |
DMN3053L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.08 грн |
6000+ | 6.61 грн |
DMN6075S-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Description: MOSFET N-CH 60V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.87 грн |
6000+ | 3.59 грн |
9000+ | 3.45 грн |
15000+ | 3.20 грн |
21000+ | 3.19 грн |
30000+ | 3.01 грн |
75000+ | 2.90 грн |
DMP2021UFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.07 грн |
DMN3016LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 10.8A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 1.18W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Description: MOSFET N-CH 30V 10.8A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 1.18W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
на замовлення 2874 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 31.05 грн |
12+ | 25.42 грн |
100+ | 17.63 грн |
DMN3035LWN-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
на замовлення 80638 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 53.56 грн |
10+ | 32.07 грн |
100+ | 20.69 грн |
500+ | 14.81 грн |
1000+ | 13.33 грн |
DMN3053L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
Description: MOSFET N-CH 30V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
на замовлення 8659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 26.39 грн |
18+ | 17.34 грн |
100+ | 9.56 грн |
500+ | 8.88 грн |
DMN6075S-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Description: MOSFET N-CH 60V 2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
на замовлення 130294 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.29 грн |
22+ | 13.90 грн |
100+ | 5.41 грн |
DMP2021UFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
на замовлення 62684 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 71.42 грн |
10+ | 48.36 грн |
100+ | 30.98 грн |
500+ | 22.61 грн |
1000+ | 21.60 грн |
DMN3053L-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23-3
Description: MOSFET N-CH 30V 4A SOT23-3
товару немає в наявності
В кошику
од. на суму грн.
DMP2021UFDF-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Description: MOSFET P-CH 20V 9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
1N4448WQ-7-F |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.52 грн |
6000+ | 1.40 грн |
DMG6602SVTQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
на замовлення 1257000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.95 грн |
6000+ | 5.61 грн |
9000+ | 5.58 грн |
15000+ | 5.21 грн |
75000+ | 5.10 грн |
DDC143ZU-7-F |
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Виробник: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 8.47 грн |
6000+ | 7.41 грн |
9000+ | 7.04 грн |
15000+ | 6.20 грн |
21000+ | 5.97 грн |
30000+ | 5.74 грн |
1N4448WQ-7-F |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Qualification: AEC-Q101
на замовлення 52392 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
45+ | 6.99 грн |
91+ | 3.29 грн |
109+ | 2.77 грн |
500+ | 2.42 грн |
DMG6602SVTQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
на замовлення 1259051 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 35.71 грн |
15+ | 21.08 грн |
100+ | 9.27 грн |
500+ | 7.55 грн |
1000+ | 6.77 грн |
DDC143ZU-7-F |
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Виробник: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Description: TRANS 2NPN PREBIAS 0.2W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 72768 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.04 грн |
14+ | 22.65 грн |
100+ | 14.34 грн |
500+ | 10.11 грн |
1000+ | 9.03 грн |
DDC144TH-7-F |
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Виробник: Diodes Incorporated
Description: TRANS 2NPN PREBIAS 0.15W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS 2NPN PREBIAS 0.15W SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: SOT-563
на замовлення 170471 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.27 грн |
14+ | 22.28 грн |
100+ | 13.37 грн |
500+ | 11.61 грн |
1000+ | 7.90 грн |
DMN61D8LVTQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
на замовлення 1101000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 9.56 грн |
6000+ | 9.18 грн |
9000+ | 8.99 грн |
15000+ | 6.80 грн |
30000+ | 6.55 грн |
75000+ | 6.48 грн |
DMN61D8LVTQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
на замовлення 1102215 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 45.80 грн |
16+ | 19.73 грн |
100+ | 16.30 грн |
500+ | 11.67 грн |
1000+ | 10.91 грн |
DMN61D8LVTQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
DMN61D8LVT-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.16 грн |
6000+ | 11.62 грн |
9000+ | 11.08 грн |
15000+ | 9.84 грн |
21000+ | 9.50 грн |
30000+ | 9.42 грн |
DMN61D8L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
на замовлення 459000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 9.54 грн |
6000+ | 8.58 грн |
9000+ | 8.11 грн |
15000+ | 7.58 грн |
21000+ | 7.31 грн |
30000+ | 7.05 грн |
DMN61D8LVT-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
Part Status: Active
на замовлення 62906 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 55.89 грн |
10+ | 33.34 грн |
100+ | 21.52 грн |
500+ | 15.41 грн |
1000+ | 13.86 грн |
DMN61D8L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Description: MOSFET N-CH 60V 470MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 390mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
на замовлення 459941 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 39.59 грн |
14+ | 22.42 грн |
100+ | 17.30 грн |
500+ | 12.41 грн |
1000+ | 11.02 грн |
PAM8905PZR |
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Виробник: Diodes Incorporated
Description: IC AMP D MONO 1.9W U-WLB1520-12
Features: Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 1.9W x 1 @ 8Ohm
Supplier Device Package: U-WLB1520-12
Part Status: Active
Description: IC AMP D MONO 1.9W U-WLB1520-12
Features: Short-Circuit and Thermal Protection
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLBGA
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 1.9W x 1 @ 8Ohm
Supplier Device Package: U-WLB1520-12
Part Status: Active
на замовлення 2954 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 107.90 грн |
10+ | 63.76 грн |
25+ | 53.31 грн |
100+ | 38.92 грн |
250+ | 33.46 грн |
500+ | 30.10 грн |
1000+ | 26.84 грн |
AL3065S16-13 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR BACKLIGHT SO-16
Description: IC LED DRVR BACKLIGHT SO-16
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
AL1678-10BS7-13 |
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Виробник: Diodes Incorporated
Description: IC LED OFFLINE DRIVER SO-7
Description: IC LED OFFLINE DRIVER SO-7
товару немає в наявності
В кошику
од. на суму грн.
AL3065S16-13 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR BACKLIGHT SO-16
Description: IC LED DRVR BACKLIGHT SO-16
на замовлення 17210 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
AL1678-10BS7-13 |
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Виробник: Diodes Incorporated
Description: IC LED OFFLINE DRIVER SO-7
Description: IC LED OFFLINE DRIVER SO-7
на замовлення 3995 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
AP22850SH8-7 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.08 грн |
6000+ | 10.88 грн |
15000+ | 10.13 грн |
30000+ | 9.01 грн |
75000+ | 8.80 грн |
AP22850SH8-7 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 8WDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21mOhm
Voltage - Load: 4.5V ~ 11V
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
на замовлення 129263 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.16 грн |
11+ | 28.18 грн |
25+ | 26.25 грн |
100+ | 19.71 грн |
250+ | 18.31 грн |
500+ | 15.49 грн |
1000+ | 11.77 грн |
APT13003DZTR-G1 |
Виробник: Diodes Incorporated
Description: TRANS NPN 450V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 1.1 W
Description: TRANS NPN 450V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 1.1 W
товару немає в наявності
В кошику
од. на суму грн.
APT13003HZTR-G1 |
Виробник: Diodes Incorporated
Description: TRANS NPN 465V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 465 V
Power - Max: 1.1 W
Description: TRANS NPN 465V 1.5A TO-92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 13 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 465 V
Power - Max: 1.1 W
товару немає в наявності
В кошику
од. на суму грн.
ZTX956STZ |
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Виробник: Diodes Incorporated
Description: TRANS PNP 200V 2A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.58 W
Description: TRANS PNP 200V 2A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 110MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.58 W
на замовлення 3850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 131.96 грн |
10+ | 80.66 грн |
100+ | 54.13 грн |
500+ | 40.13 грн |
1000+ | 36.69 грн |
ZX5T851ASTZ |
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Виробник: Diodes Incorporated
Description: TRANS NPN 60V 4.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS NPN 60V 4.5A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 200mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 79.18 грн |
10+ | 62.12 грн |
100+ | 48.30 грн |
500+ | 38.42 грн |
1000+ | 31.30 грн |
BAS70LP-7B |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTT 70V 70MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Description: DIODE SCHOTT 70V 70MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
на замовлення 637908 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
45+ | 6.99 грн |
69+ | 4.34 грн |
100+ | 4.33 грн |
500+ | 3.37 грн |
BZT52C5V6-13-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 5.6V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 370MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 394923 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
37+ | 8.54 грн |
58+ | 5.23 грн |
150+ | 2.00 грн |
500+ | 1.75 грн |
1000+ | 1.55 грн |
2000+ | 1.52 грн |
5000+ | 1.46 грн |
BZX84B27-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Description: DIODE ZENER 27V 300MW SOT23
товару немає в наявності
В кошику
од. на суму грн.
BZX84B8V2-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23
Description: DIODE ZENER 8.2V 300MW SOT23
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.42 грн |
DMN3190LDW-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 30V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-363
на замовлення 311796 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.17 грн |
19+ | 16.37 грн |
100+ | 10.29 грн |
500+ | 7.18 грн |
1000+ | 6.38 грн |
2000+ | 5.71 грн |
5000+ | 4.89 грн |
DMP3099L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
Description: MOSFET P-CH 30V 3.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
на замовлення 327815 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 18.63 грн |
31+ | 9.72 грн |
100+ | 5.31 грн |
500+ | 4.86 грн |
1000+ | 4.73 грн |
DMP32D4S-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
Description: MOSFET P-CH 30V 300MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 300mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 51.16 pF @ 15 V
на замовлення 66050 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.50 грн |
18+ | 17.19 грн |
100+ | 10.88 грн |
500+ | 7.62 грн |
1000+ | 6.41 грн |
ZXMC3F31DN8TA |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
на замовлення 23500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.51 грн |
10+ | 48.96 грн |
100+ | 32.13 грн |