Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74734) > Сторінка 1246 з 1246
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DMTH6004SPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.1W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Power dissipation: 2.1W Case: PowerDI3333-8 On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 95.4nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| DMTH6005LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 75W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Power dissipation: 75W Case: PowerDI3333-8 On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 23.6nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DXTP03060CFG-7 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8 Type of transistor: PNP Polarisation: bipolar Case: PowerDI®3333-8 Mounting: SMD Kind of package: reel; tape Current gain: 45...800 Frequency: 120MHz Collector current: 5.5A Manufacturer standard package: 2000pcs. Collector-emitter voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMP6050SFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -4.8A; 1.1W; PowerDI3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.8A Power dissipation: 1.1W Case: PowerDI3333-8 On-state resistance: 36mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 24nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMN22M5UFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 27A; 2.2W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 27A Power dissipation: 2.2W Case: PowerDI3333-8 On-state resistance: 2mΩ Mounting: SMD Gate charge: 53nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMP3036SFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Power dissipation: 0.9W Case: PowerDI®3333-8 Gate-source voltage: ±25V On-state resistance: 29mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMTH6016LFVWQ-7-A | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 41A; 2.38W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 41A Power dissipation: 2.38W Case: PowerDI3333-8 On-state resistance: 16mΩ Mounting: SMD Gate charge: 7.3nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMN10H170SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 1.3W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 0.133Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMN10H170SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.9A; 2W; PowerDI®3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.9A Power dissipation: 2W Case: PowerDI®3333-8 On-state resistance: 0.133Ω Mounting: SMD Gate charge: 7nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMN3008SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 23A; 2.1W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 23A Power dissipation: 2.1W Case: PowerDI3333-8 On-state resistance: 4.4mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 86nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMN6069SFVW-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 4A; 2.5W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 2.5W Case: PowerDI3333-8 On-state resistance: 69mΩ Mounting: SMD Gate charge: 6.4nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMTH69M8LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 15.9A; 3.6W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.9A Power dissipation: 3.6W Case: PowerDI3333-8 On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 15.6nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMTH8008SFGQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 68A; 3.2W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 68A Power dissipation: 3.2W Case: PowerDI3333-8 On-state resistance: 7mΩ Mounting: SMD Gate charge: 31.7nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DMTH8028LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 27A; 1.5W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 27A Power dissipation: 1.5W Case: PowerDI3333-8 Mounting: SMD Kind of channel: enhancement Gate charge: 10.4nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DXTN03060CFG-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 6A; 2.7W; PowerDI®3333-8 Type of transistor: NPN Polarisation: bipolar Power dissipation: 2.7W Case: PowerDI®3333-8 Mounting: SMD Pulsed collector current: 20A Frequency: 140MHz Collector current: 6A Collector-emitter voltage: 60V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DXTN03100CFG-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 2.7W; PowerDI®3333-8 Type of transistor: NPN Polarisation: bipolar Power dissipation: 2.7W Case: PowerDI®3333-8 Mounting: SMD Pulsed collector current: 20A Application: automotive industry Frequency: 140MHz Collector current: 6A Collector-emitter voltage: 60V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |
| DXTN07100BFG-7 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 2A; 900mW; PowerDI®3333-8 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.9W Case: PowerDI®3333-8 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Frequency: 175MHz Collector current: 2A Manufacturer standard package: 2000pcs. Collector-emitter voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |
|
DXT3906-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: SOT89 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Manufacturer standard package: 2500pcs. |
товару немає в наявності |
В кошику од. на суму грн. |
|
DMN10H700S-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 560mA; Idm: 2.5A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.56A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 2.5A Gate charge: 4.6nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
|
DMN10H120SE-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
|
DMN10H170SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 16A; 17W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.5A Power dissipation: 17W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 9.7nC |
товару немає в наявності |
В кошику од. на суму грн. |
|
DMN10H099SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 22W Case: TO252 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 25.2nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
DMN10H170SVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.1A Power dissipation: 1.7W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 11.2A Gate charge: 9.7nC |
товару немає в наявності |
В кошику од. на суму грн. |
|
DMN10H170SVTQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.3A Power dissipation: 1.2W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| DMN10H099SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Power dissipation: 1.18W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 25.2nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMN10H099SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Power dissipation: 1.18W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 25.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |
|
DMN10H100SK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 16A; 24W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Power dissipation: 24W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 25.2nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| DMN10H120SFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.2A Power dissipation: 1.5W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 10.6nC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| DMN10H120SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.2A Power dissipation: 1.5W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 0.122Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 10.6nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMN10H170SFDE-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Power dissipation: 2W Case: U-DFN2020-6 On-state resistance: 0.16Ω Mounting: SMD Gate charge: 9.7nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |
| DMN10H170SFDE-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 10A Gate charge: 9.7nC |
товару немає в наявності |
В кошику од. на суму грн. | |
| DMN10H170SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Power dissipation: 1.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 0.133Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 14.9nC |
товару немає в наявності |
В кошику од. на суму грн. | |
|
DMN10H170SK3Q-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 16A; 17W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.5A Power dissipation: 17W Case: TO252 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 9.7nC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
|
DMN10H170SVT-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.1A Power dissipation: 1.7W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 11.2A Gate charge: 9.7nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| DMTH6004SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.1W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Power dissipation: 2.1W
Case: PowerDI3333-8
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 95.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.1W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Power dissipation: 2.1W
Case: PowerDI3333-8
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 95.4nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH6005LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Power dissipation: 75W
Case: PowerDI3333-8
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 23.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Power dissipation: 75W
Case: PowerDI3333-8
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 23.6nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DXTP03060CFG-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Current gain: 45...800
Frequency: 120MHz
Collector current: 5.5A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 60V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Type of transistor: PNP
Polarisation: bipolar
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Current gain: 45...800
Frequency: 120MHz
Collector current: 5.5A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
| DMP6050SFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.8A; 1.1W; PowerDI3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.8A
Power dissipation: 1.1W
Case: PowerDI3333-8
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24nC
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.8A; 1.1W; PowerDI3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.8A
Power dissipation: 1.1W
Case: PowerDI3333-8
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN22M5UFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 27A; 2.2W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 27A
Power dissipation: 2.2W
Case: PowerDI3333-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 53nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 27A; 2.2W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 27A
Power dissipation: 2.2W
Case: PowerDI3333-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 53nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMP3036SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Power dissipation: 0.9W
Case: PowerDI®3333-8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 0.9W; PowerDI®3333-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Power dissipation: 0.9W
Case: PowerDI®3333-8
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMTH6016LFVWQ-7-A |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; 2.38W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Power dissipation: 2.38W
Case: PowerDI3333-8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 7.3nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; 2.38W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Power dissipation: 2.38W
Case: PowerDI3333-8
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 7.3nC
Application: automotive industry
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Мінімальне замовлення: 2000 шт
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| DMN10H170SFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 1.3W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.3W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 1.3W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMN10H170SFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.9A; 2W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.9A
Power dissipation: 2W
Case: PowerDI®3333-8
On-state resistance: 0.133Ω
Mounting: SMD
Gate charge: 7nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.9A; 2W; PowerDI®3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.9A
Power dissipation: 2W
Case: PowerDI®3333-8
On-state resistance: 0.133Ω
Mounting: SMD
Gate charge: 7nC
Application: automotive industry
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Мінімальне замовлення: 2000 шт
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| DMN3008SFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 2.1W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 2.1W
Case: PowerDI3333-8
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 86nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 2.1W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 2.1W
Case: PowerDI3333-8
On-state resistance: 4.4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 86nC
Application: automotive industry
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Мінімальне замовлення: 2000 шт
В кошику
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| DMN6069SFVW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 2.5W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 2.5W
Case: PowerDI3333-8
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 6.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 2.5W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 2.5W
Case: PowerDI3333-8
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 6.4nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| DMTH69M8LFVWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.9A; 3.6W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.9A
Power dissipation: 3.6W
Case: PowerDI3333-8
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 15.6nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.9A; 3.6W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.9A
Power dissipation: 3.6W
Case: PowerDI3333-8
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 15.6nC
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| DMTH8008SFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 68A; 3.2W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 68A
Power dissipation: 3.2W
Case: PowerDI3333-8
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 31.7nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 68A; 3.2W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 68A
Power dissipation: 3.2W
Case: PowerDI3333-8
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 31.7nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| DMTH8028LFVWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; 1.5W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27A
Power dissipation: 1.5W
Case: PowerDI3333-8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.4nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; 1.5W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27A
Power dissipation: 1.5W
Case: PowerDI3333-8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.4nC
Application: automotive industry
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DXTN03060CFG-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2.7W; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 2.7W
Case: PowerDI®3333-8
Mounting: SMD
Pulsed collector current: 20A
Frequency: 140MHz
Collector current: 6A
Collector-emitter voltage: 60V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2.7W; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 2.7W
Case: PowerDI®3333-8
Mounting: SMD
Pulsed collector current: 20A
Frequency: 140MHz
Collector current: 6A
Collector-emitter voltage: 60V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DXTN03100CFG-7 |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2.7W; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 2.7W
Case: PowerDI®3333-8
Mounting: SMD
Pulsed collector current: 20A
Application: automotive industry
Frequency: 140MHz
Collector current: 6A
Collector-emitter voltage: 60V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2.7W; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 2.7W
Case: PowerDI®3333-8
Mounting: SMD
Pulsed collector current: 20A
Application: automotive industry
Frequency: 140MHz
Collector current: 6A
Collector-emitter voltage: 60V
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Мінімальне замовлення: 2000 шт
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| DXTN07100BFG-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.9W
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Frequency: 175MHz
Collector current: 2A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 100V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 900mW; PowerDI®3333-8
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.9W
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Frequency: 175MHz
Collector current: 2A
Manufacturer standard package: 2000pcs.
Collector-emitter voltage: 100V
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| DXT3906-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 2500pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 2500pcs.
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| DMN10H700S-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 560mA; Idm: 2.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.56A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.5A
Gate charge: 4.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 560mA; Idm: 2.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.56A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.5A
Gate charge: 4.6nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| DMN10H120SE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMN10H170SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 16A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 9.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 16A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 9.7nC
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| DMN10H099SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 22W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 25.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 22W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 25.2nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMN10H170SVT-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.1A
Power dissipation: 1.7W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 11.2A
Gate charge: 9.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.1A
Power dissipation: 1.7W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 11.2A
Gate charge: 9.7nC
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| DMN10H170SVTQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.3A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; 1.2W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.3A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMN10H099SFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 1.18W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 25.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 1.18W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 25.2nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMN10H099SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 1.18W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 25.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 1.18W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 25.2nC
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| DMN10H100SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 16A; 24W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 24W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 25.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 16A; 24W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 24W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 25.2nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| DMN10H120SFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 10.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 10.6nC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| DMN10H120SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 10.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.2A
Power dissipation: 1.5W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 10.6nC
товару немає в наявності
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| DMN10H170SFDE-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2W
Case: U-DFN2020-6
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 9.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2W; U-DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2W
Case: U-DFN2020-6
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 9.7nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| DMN10H170SFDE-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Gate charge: 9.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 10A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 10A
Gate charge: 9.7nC
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| DMN10H170SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 14.9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 16A; 1.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Power dissipation: 1.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 0.133Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 14.9nC
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| DMN10H170SK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 16A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 9.7nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 16A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 9.7nC
Application: automotive industry
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| DMN10H170SVT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.1A
Power dissipation: 1.7W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 11.2A
Gate charge: 9.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.1A; Idm: 11.2A; 1.7W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.1A
Power dissipation: 1.7W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 11.2A
Gate charge: 9.7nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.








