Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74093) > Сторінка 301 з 1235
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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D3V3L2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM 7V X2DFN10103Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: X2-DFN1010-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 3.8V Voltage - Clamping (Max) @ Ipp: 7V Power - Peak Pulse: 35W Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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D5V0F2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SBR10E45P5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 280 µA @ 45 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SBRT3M60SA-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SBRT3U60SA-13 | Diodes Incorporated |
Description: DIODE SBR 60V 3A SMA Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SMA Current - Average Rectified (Io): 3A Technology: Super Barrier Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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D5V0L1B2DLP3-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 14VC X3ESN06032Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: X3-ESN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 84W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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D5V0M1U2S9-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 54pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 108W Power Line Protection: No |
на замовлення 110000 шт: термін постачання 21-31 дні (днів) |
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DMP6110SVT-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SBRT3U45SAF-13 | Diodes Incorporated |
Description: DIODE SBR 45V 3A SMAFPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V |
на замовлення 140000 шт: термін постачання 21-31 дні (днів) |
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SBR10E45P5-7 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 280 µA @ 45 V |
на замовлення 7474 шт: термін постачання 21-31 дні (днів) |
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DMP2002UPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 60A PWRDI5060-8Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: PowerDI5060-8 (Type K) Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 12609 шт: термін постачання 21-31 дні (днів) |
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DMP6050SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 4.8A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V Current - Continuous Drain (Id) @ 25°C: 4.8A Drain to Source Voltage (Vdss): 60V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 22326 шт: термін постачання 21-31 дні (днів) |
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DMT8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 44A TO252Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.7W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 210863 шт: термін постачання 21-31 дні (днів) |
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DMTH8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 50A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH8012LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DT6250-06MR-13 | Diodes Incorporated |
Description: TVS DIODE 5VWM 10VC 8-MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 8-MSOP Unidirectional Channels: 6 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power Line Protection: Yes |
на замовлення 85574 шт: термін постачання 21-31 дні (днів) |
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SBRT10U60D1-13 | Diodes Incorporated |
Description: DIODE SBR 60V 10A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 39565 шт: термін постачання 21-31 дні (днів) |
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D5V0M5B6LP16-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 14VC U-DFN1616-6Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: U-DFN1616-6 Bidirectional Channels: 5 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 130W Power Line Protection: No |
на замовлення 44845 шт: термін постачання 21-31 дні (днів) |
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DESD5V0U1BA-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 7.2VC SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2.9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMHC10H170SFJ-13 | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFNPackaging: Cut Tape (CT) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active |
на замовлення 2853 шт: термін постачання 21-31 дні (днів) |
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DMP1011UCB9-7 | Diodes Incorporated |
Description: MOSFET P-CH 8V 10A U-WLB1515-9Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V |
на замовлення 272753 шт: термін постачання 21-31 дні (днів) |
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DMP6110SVT-7 | Diodes Incorporated |
Description: MOSFET P-CH 60V 7.3A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V |
на замовлення 2547 шт: термін постачання 21-31 дні (днів) |
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SBRT4U10LP-7 | Diodes Incorporated |
Description: DIODE SBR 10V 4A U-DFN2020-2 |
на замовлення 300012000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBRT4U30LP-7 | Diodes Incorporated |
Description: DIODE SBR 30V 4A U-DFN2020-2 |
на замовлення 134990 шт: термін постачання 21-31 дні (днів) |
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SBRT6U10LP-7 | Diodes Incorporated |
Description: DIODE SBR 10V 6A U-DFN3030-8 |
на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBRT6U20LP-7 | Diodes Incorporated |
Description: DIODE SBR 20V 6A U-DFN3030-8 |
на замовлення 645 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBRT6U45LP-7 | Diodes Incorporated |
Description: DIODE SBR 45V 6A U-DFN3030-8 |
на замовлення 627 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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ZXTR2112F-7 | Diodes Incorporated |
Description: IC REG LINEAR 12V 15MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 15mA Operating Temperature: -65°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 360 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 12V Grade: Automotive Part Status: Active PSRR: 50dB (100Hz) Current - Supply (Max): 6 mA Qualification: AEC-Q101 |
на замовлення 15892 шт: термін постачання 21-31 дні (днів) |
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AP1695-20CS7-13 | Diodes Incorporated |
Description: IC LED DRIVER OFFL TRIAC 2A 7SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 105°C (TA) Applications: Lighting Current - Output / Channel: 2A Internal Switch(s): Yes Topology: Flyback, Step-Down (Buck), Step-Up (Boost) Supplier Device Package: 7-SO Dimming: Triac Voltage - Supply (Min): 7V Voltage - Supply (Max): 25V |
на замовлення 3970 шт: термін постачання 21-31 дні (днів) |
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D3V3L2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 3.3VWM 7V X2DFN10103Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: X2-DFN1010-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 3.8V Voltage - Clamping (Max) @ Ipp: 7V Power - Peak Pulse: 35W Power Line Protection: No Part Status: Active |
на замовлення 2838 шт: термін постачання 21-31 дні (днів) |
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D5V0F2B3LP10-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010 Packaging: Cut Tape (CT) Mounting Type: Surface Mount |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SBR10E45P5-13 | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Current - Reverse Leakage @ Vr: 280 µA @ 45 V |
на замовлення 9519 шт: термін постачання 21-31 дні (днів) |
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D5V0L1B2DLP3-7 | Diodes Incorporated |
Description: TVS DIODE 5VWM 14VC X3ESN06032Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: X3-ESN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 84W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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D5V0M1U2S9-7 | Diodes Incorporated |
Description: TVS DIODE 5.5VWM 12VC SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 54pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 108W Power Line Protection: No |
на замовлення 122639 шт: термін постачання 21-31 дні (днів) |
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SBRT3U45SAF-13 | Diodes Incorporated |
Description: DIODE SBR 45V 3A SMAFPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 3A Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V |
на замовлення 141217 шт: термін постачання 21-31 дні (днів) |
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DMTH8012LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 50A TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH8012LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRT4U10LP-7 | Diodes Incorporated |
Description: DIODE SBR 10V 4A U-DFN2020-2 |
на замовлення 300012000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DMN3033LSNQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 6A SC59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SBR10E45P5-7D | Diodes Incorporated |
Description: DIODE SBR 45V 10A POWERDI5 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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DESD34VS2SO-7 | Diodes Incorporated |
Description: TVS DIODE 34VWM 57VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 34V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 36V Voltage - Clamping (Max) @ Ipp: 57V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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DMN3015LSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 8.4A 8SOPart Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMN3027LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SBR1A400P1-7 | Diodes Incorporated |
Description: DIODE SBR 400V 1A POWERDI 123Packaging: Tape & Reel (TR) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Super Barrier Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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ZXGD3107N8TC | Diodes Incorporated |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 40V (Max) Input Type: Non-Inverting Supplier Device Package: 8-SO Rise / Fall Time (Typ): 175ns, 20ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 2A, 7A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DESD34VS2SO-7 | Diodes Incorporated |
Description: TVS DIODE 34VWM 57VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 34V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 36V Voltage - Clamping (Max) @ Ipp: 57V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 57695 шт: термін постачання 21-31 дні (днів) |
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DMN3015LSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 8.4A 8SODrain to Source Voltage (Vdss): 30V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) |
на замовлення 1602 шт: термін постачання 21-31 дні (днів) |
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DMN3027LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 18854 шт: термін постачання 21-31 дні (днів) |
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SBR1A400P1-7 | Diodes Incorporated |
Description: DIODE SBR 400V 1A POWERDI 123Packaging: Cut Tape (CT) Package / Case: POWERDI®123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Super Barrier Current - Average Rectified (Io): 1A Supplier Device Package: PowerDI™ 123 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
на замовлення 66204 шт: термін постачання 21-31 дні (днів) |
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ZXGD3107N8TC | Diodes Incorporated |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 40V (Max) Input Type: Non-Inverting Supplier Device Package: 8-SO Rise / Fall Time (Typ): 175ns, 20ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 2A, 7A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3986 шт: термін постачання 21-31 дні (днів) |
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DMN3027LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SBR20E100CT | Diodes Incorporated |
Description: DIODE ARRAY SBR 100V 10A TO220-3Current - Reverse Leakage @ Vr: 90 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Super Barrier Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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SBR20E120CT | Diodes Incorporated |
Description: DIODE SCHOTTKY 120V 20A TO220ABCurrent - Reverse Leakage @ Vr: 90 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Super Barrier Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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| APT13003NZTR-G1 | Diodes Incorporated |
Description: TRANS NPN 900V 1.5A TO-92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 900 V Power - Max: 1 W |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
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74AUP1G57DW-7 | Diodes Incorporated |
Description: IC GATE SGL 3INP MULTIFUN SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AUP1G57FZ4-7 | Diodes Incorporated |
Description: IC GATE SGL 3INP MULTIF X2-6DFNNumber of Circuits: 1 Supplier Device Package: X2-DFN1410-6 Schmitt Trigger Input: No Number of Inputs: 3 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 0.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C Logic Type: Configurable Multiple Function Mounting Type: Surface Mount Output Type: Single-Ended Package / Case: 6-XFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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74AUP1G57W6-7 | Diodes Incorporated |
Description: IC GATE SGL 3INP MULTIFUN SOT26Mounting Type: Surface Mount Output Type: Single-Ended Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Number of Circuits: 1 Supplier Device Package: SOT-26 Schmitt Trigger Input: No Number of Inputs: 3 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 0.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C Logic Type: Configurable Multiple Function |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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74AUP1G58DW-7 | Diodes Incorporated |
Description: IC GATE SGL 3INP MULTIFUN SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AUP1G58FZ4-7 | Diodes Incorporated |
Description: IC GATE SGL 3INP MULTIF X2-6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AUP1G58W6-7 | Diodes Incorporated |
Description: IC GATE SGL 3INP MULTIFUN SOT26 |
товару немає в наявності |
В кошику од. на суму грн. |
| D3V3L2B3LP10-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| D5V0F2B3LP10-7 |
Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 7.43 грн |
| SBR10E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 13.42 грн |
| SBRT3M60SA-13 |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SBR 60V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SBRT3U60SA-13 |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 3A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SBR 60V 3A SMA
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| D5V0L1B2DLP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| D5V0M1U2S9-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.09 грн |
| 30000+ | 2.56 грн |
| DMP6110SVT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SBRT3U45SAF-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Description: DIODE SBR 45V 3A SMAF
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 5.88 грн |
| 20000+ | 5.17 грн |
| 30000+ | 4.98 грн |
| 50000+ | 4.38 грн |
| SBR10E45P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
на замовлення 7474 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.73 грн |
| 20+ | 15.62 грн |
| DMP2002UPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 60A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 12609 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 178.80 грн |
| 10+ | 129.06 грн |
| 100+ | 89.27 грн |
| 500+ | 70.14 грн |
| DMP6050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 4.8A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 60V 4.8A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 22326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.17 грн |
| 10+ | 41.75 грн |
| 100+ | 28.46 грн |
| 500+ | 25.00 грн |
| 1000+ | 22.71 грн |
| DMT8012LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 44A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 44A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 210863 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.00 грн |
| 10+ | 59.04 грн |
| 100+ | 41.22 грн |
| 500+ | 30.79 грн |
| 1000+ | 28.05 грн |
| DMTH8012LK3-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Description: MOSFET N-CH 80V 50A TO252
товару немає в наявності
В кошику
од. на суму грн.
| DMTH8012LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| DT6250-06MR-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 10VC 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 8-MSOP
Unidirectional Channels: 6
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
на замовлення 85574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.96 грн |
| 10+ | 33.90 грн |
| 25+ | 28.28 грн |
| 50+ | 23.25 грн |
| 100+ | 20.47 грн |
| SBRT10U60D1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SBR 60V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 39565 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.37 грн |
| 10+ | 89.82 грн |
| 25+ | 76.03 грн |
| 50+ | 63.29 грн |
| 100+ | 56.52 грн |
| D5V0M5B6LP16-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC U-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: U-DFN1616-6
Bidirectional Channels: 5
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 130W
Power Line Protection: No
на замовлення 44845 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.06 грн |
| 16+ | 20.19 грн |
| 100+ | 10.20 грн |
| 500+ | 8.49 грн |
| 1000+ | 6.61 грн |
| DESD5V0U1BA-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 7.2VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 7.2V (Typ)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DMHC10H170SFJ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Cut Tape (CT)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
на замовлення 2853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.57 грн |
| 10+ | 89.37 грн |
| 25+ | 75.73 грн |
| 50+ | 63.10 грн |
| 100+ | 56.40 грн |
| DMP1011UCB9-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
на замовлення 272753 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 56.38 грн |
| 100+ | 37.18 грн |
| 500+ | 27.15 грн |
| 1000+ | 24.66 грн |
| DMP6110SVT-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Description: MOSFET P-CH 60V 7.3A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
на замовлення 2547 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.08 грн |
| 10+ | 38.40 грн |
| 100+ | 24.93 грн |
| 500+ | 17.94 грн |
| 1000+ | 16.19 грн |
| SBRT4U10LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
Description: DIODE SBR 10V 4A U-DFN2020-2
на замовлення 300012000 шт:
термін постачання 21-31 дні (днів)
| SBRT4U30LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 30V 4A U-DFN2020-2
Description: DIODE SBR 30V 4A U-DFN2020-2
на замовлення 134990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.84 грн |
| 10+ | 42.28 грн |
| 100+ | 32.42 грн |
| 500+ | 24.05 грн |
| 1000+ | 19.24 грн |
| SBRT6U10LP-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 10V 6A U-DFN3030-8
Description: DIODE SBR 10V 6A U-DFN3030-8
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
| SBRT6U20LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 20V 6A U-DFN3030-8
Description: DIODE SBR 20V 6A U-DFN3030-8
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
| SBRT6U45LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 6A U-DFN3030-8
Description: DIODE SBR 45V 6A U-DFN3030-8
на замовлення 627 шт:
термін постачання 21-31 дні (днів)
| ZXTR2112F-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
Description: IC REG LINEAR 12V 15MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -65°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 360 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 12V
Grade: Automotive
Part Status: Active
PSRR: 50dB (100Hz)
Current - Supply (Max): 6 mA
Qualification: AEC-Q101
на замовлення 15892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.81 грн |
| 14+ | 23.24 грн |
| 25+ | 20.75 грн |
| 50+ | 18.05 грн |
| 100+ | 16.87 грн |
| AP1695-20CS7-13 |
Виробник: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
Description: IC LED DRIVER OFFL TRIAC 2A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 2A
Internal Switch(s): Yes
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 25V
на замовлення 3970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.41 грн |
| 10+ | 60.72 грн |
| 25+ | 57.63 грн |
| 100+ | 44.43 грн |
| 250+ | 41.53 грн |
| 500+ | 36.70 грн |
| 1000+ | 28.50 грн |
| D3V3L2B3LP10-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 7V X2DFN10103
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: X2-DFN1010-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 7V
Power - Peak Pulse: 35W
Power Line Protection: No
Part Status: Active
на замовлення 2838 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 21.18 грн |
| 25+ | 17.58 грн |
| 50+ | 14.37 грн |
| 100+ | 12.58 грн |
| D5V0F2B3LP10-7 |
Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Description: TVS DIODE 5.5VWM 12VC X2-DFN1010
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.81 грн |
| 13+ | 23.47 грн |
| 100+ | 11.85 грн |
| 500+ | 9.86 грн |
| 1000+ | 7.67 грн |
| 2000+ | 6.87 грн |
| SBR10E45P5-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 280 µA @ 45 V
на замовлення 9519 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.05 грн |
| 10+ | 31.85 грн |
| 100+ | 23.24 грн |
| 500+ | 16.73 грн |
| 1000+ | 14.67 грн |
| 2000+ | 13.72 грн |
| D5V0L1B2DLP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
Description: TVS DIODE 5VWM 14VC X3ESN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: X3-ESN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 84W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| D5V0M1U2S9-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 12VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 54pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 108W
Power Line Protection: No
на замовлення 122639 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.20 грн |
| 29+ | 10.82 грн |
| 35+ | 8.90 грн |
| 50+ | 7.24 грн |
| 100+ | 6.28 грн |
| SBRT3U45SAF-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 3A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Description: DIODE SBR 45V 3A SMAF
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 3A
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
на замовлення 141217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.94 грн |
| 21+ | 15.08 грн |
| 100+ | 12.14 грн |
| 500+ | 8.54 грн |
| 1000+ | 7.37 грн |
| 2000+ | 6.84 грн |
| 5000+ | 5.90 грн |
| DMTH8012LK3-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 50A TO252
Description: MOSFET N-CH 80V 50A TO252
товару немає в наявності
В кошику
од. на суму грн.
| DMTH8012LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
Description: MOSFET N-CH 80V 9.5A PWRDI5060-8
товару немає в наявності
В кошику
од. на суму грн.
| SBRT4U10LP-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 10V 4A U-DFN2020-2
Description: DIODE SBR 10V 4A U-DFN2020-2
на замовлення 300012000 шт:
термін постачання 21-31 дні (днів)
| DMN3033LSNQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 6A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
Description: MOSFET N-CH 30V 6A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SBR10E45P5-7D |
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Виробник: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Description: DIODE SBR 45V 10A POWERDI5
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| DESD34VS2SO-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 34VWM 57VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 34V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36V
Voltage - Clamping (Max) @ Ipp: 57V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 34VWM 57VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 34V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36V
Voltage - Clamping (Max) @ Ipp: 57V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.50 грн |
| 6000+ | 5.69 грн |
| 9000+ | 5.40 грн |
| 15000+ | 4.78 грн |
| DMN3015LSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.4A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8.4A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMN3027LFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 18.76 грн |
| 6000+ | 17.12 грн |
| 10000+ | 15.85 грн |
| SBR1A400P1-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 400V 1A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE SBR 400V 1A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.63 грн |
| 6000+ | 14.44 грн |
| ZXGD3107N8TC |
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Виробник: Diodes Incorporated
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 40V (Max)
Input Type: Non-Inverting
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 175ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 40V (Max)
Input Type: Non-Inverting
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 175ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 38.55 грн |
| DESD34VS2SO-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 34VWM 57VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 34V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36V
Voltage - Clamping (Max) @ Ipp: 57V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 34VWM 57VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 34V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36V
Voltage - Clamping (Max) @ Ipp: 57V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 57695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.41 грн |
| 24+ | 12.95 грн |
| 100+ | 7.82 грн |
| 500+ | 6.79 грн |
| 1000+ | 5.84 грн |
| DMN3015LSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8.4A 8SO
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Description: MOSFET 2N-CH 30V 8.4A 8SO
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
на замовлення 1602 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.08 грн |
| 10+ | 38.47 грн |
| 100+ | 25.06 грн |
| 500+ | 18.07 грн |
| 1000+ | 16.32 грн |
| DMN3027LFG-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 18854 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.84 грн |
| 10+ | 41.22 грн |
| 100+ | 28.52 грн |
| 500+ | 22.37 грн |
| 1000+ | 19.04 грн |
| SBR1A400P1-7 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 400V 1A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE SBR 400V 1A POWERDI 123
Packaging: Cut Tape (CT)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Super Barrier
Current - Average Rectified (Io): 1A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
на замовлення 66204 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.43 грн |
| 10+ | 30.86 грн |
| 100+ | 19.91 грн |
| 500+ | 14.25 грн |
| 1000+ | 13.38 грн |
| ZXGD3107N8TC |
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Виробник: Diodes Incorporated
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 40V (Max)
Input Type: Non-Inverting
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 175ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 40V (Max)
Input Type: Non-Inverting
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 175ns, 20ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A, 7A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.70 грн |
| 10+ | 56.00 грн |
| 25+ | 50.59 грн |
| 50+ | 44.40 грн |
| 100+ | 41.87 грн |
| DMN3027LFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SBR20E100CT |
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Виробник: Diodes Incorporated
Description: DIODE ARRAY SBR 100V 10A TO220-3
Current - Reverse Leakage @ Vr: 90 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY SBR 100V 10A TO220-3
Current - Reverse Leakage @ Vr: 90 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.81 грн |
| 10+ | 64.91 грн |
| 25+ | 54.70 грн |
| 50+ | 45.39 грн |
| 100+ | 40.35 грн |
| SBR20E120CT |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 120V 20A TO220AB
Current - Reverse Leakage @ Vr: 90 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE SCHOTTKY 120V 20A TO220AB
Current - Reverse Leakage @ Vr: 90 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.88 грн |
| APT13003NZTR-G1 |
Виробник: Diodes Incorporated
Description: TRANS NPN 900V 1.5A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 1 W
Description: TRANS NPN 900V 1.5A TO-92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 74AUP1G57DW-7 |
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Виробник: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIFUN SOT363
Description: IC GATE SGL 3INP MULTIFUN SOT363
товару немає в наявності
В кошику
од. на суму грн.
| 74AUP1G57FZ4-7 |
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Виробник: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIF X2-6DFN
Number of Circuits: 1
Supplier Device Package: X2-DFN1410-6
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Description: IC GATE SGL 3INP MULTIF X2-6DFN
Number of Circuits: 1
Supplier Device Package: X2-DFN1410-6
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 74AUP1G57W6-7 |
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Виробник: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIFUN SOT26
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Supplier Device Package: SOT-26
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
Description: IC GATE SGL 3INP MULTIFUN SOT26
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Supplier Device Package: SOT-26
Schmitt Trigger Input: No
Number of Inputs: 3
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Configurable Multiple Function
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74AUP1G58DW-7 |
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Виробник: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIFUN SOT363
Description: IC GATE SGL 3INP MULTIFUN SOT363
товару немає в наявності
В кошику
од. на суму грн.
| 74AUP1G58FZ4-7 |
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Виробник: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIF X2-6DFN
Description: IC GATE SGL 3INP MULTIF X2-6DFN
товару немає в наявності
В кошику
од. на суму грн.
| 74AUP1G58W6-7 |
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Виробник: Diodes Incorporated
Description: IC GATE SGL 3INP MULTIFUN SOT26
Description: IC GATE SGL 3INP MULTIFUN SOT26
товару немає в наявності
В кошику
од. на суму грн.

































